Liquid crystal panel etching liquid and application thereof

Abstract

The invention provides a liquid crystal panel etching solution and application thereof. The liquid crystal panel etching solution comprises a main agent and an auxiliary agent, the main agent comprises an oxidizing agent, organic acid, organic alkali, a cone angle maintaining agent, a metal interface improving agent, an etching speed regulating agent, a stabilizing agent and water; the auxiliary agent comprises organic acid, a metal chelating agent, organic alkali, an etching speed regulator, a stabilizer, an alloy residue remover and water. The etching liquid provided by the invention does not contain F, is environment-friendly, is small in IGZO corrosion, does not affect the characteristics of a panel, can maintain the morphology of a large-angle metal angle, solves the problem of interface opening caused by small CD Loss, guarantees the size of a metal taper angle, can guarantee the service life of high copper concentration and the safety of the liquid medicine, and is free of etching residues.

Description

Technical Field

[0001] The invention belongs to the technical field of liquid crystal panel etching, and in particular relates to a liquid crystal panel etching liquid and application thereof. Background Art

[0002] In the current LCD panel production process, with the large size, high resolution and driving frequency requirements of LCD display terminals such as TVs, it is urgent to solve the resistance / capacitance time delay problem in the TFT array substrate. Since copper wires have lower resistivity and good anti-electromigration ability than aluminum wires, most of the metal wires in the TFT array process are copper wires. For the copper wire process, the etching solutions with two-layer metal structures such as Cu / Mo, Cu / Ti, Cu / MTD, and Cu / MoNb have been used for mass production in the industry.

[0003] In the common Cu / MTD alloy etching, CD is required to be small and metal taper angle is required to be large. Etching liquid is mainly divided into two categories. One is Korean etching liquid, which has high H2O2 content and low pH, and belongs to fluorine-containing etching liquid system. This system has a short service life, and the maximum copper load is 4000-5000ppm. In addition, fluorine-containing etching liquid is prone to chamfer interface opening problems on the MTD layer at low pH. Fluorine is corrosive to the underlying oxide layer IGZO, affecting the electrical properties of the panel, and the disposal of fluorine-containing waste liquid is not friendly to environmental disposal; the other is a two-dose etching liquid, which has a relatively good copper concentration life and does not contain fluorine, but the Cu layer taper angle is small, and the CD size is generally large, which cannot meet the requirements of panels with smaller dimensional accuracy.

[0004] CN118516673A discloses a MTD-Cu-MTD etching solution and etching method, wherein the etching solution is composed of 2-8% hydrogen peroxide, 4-10% organic acid, 3-8% pH regulator, 0.5-3% stabilizer, 0.02-1.0% inorganic acid, 0.01-0.5% metal corrosion inhibitor, 1-5% complexing agent, and the balance is water. The invention provides a fluorine-free, environmentally friendly etching solution without top metal protrusion (Tip), bottom metal tailing (Tail) and other phenomena, which can effectively and controllably adjust the etching cone angle and CD bias, meet the etching requirements of MTD-Cu-MTD structures of different thicknesses for panels, realize efficient use of liquid medicine, and reduce etching costs.

[0005] CN118685774A discloses a Cu-MTD etching solution for liquid crystal panels and a preparation method thereof, belonging to the technical field of copper etching solution, comprising the following components by weight: 5-18% hydrogen peroxide, 0.01-1% stabilizer, 1-12% organic acid, 1-10% organic base, 0.01-2% corrosion inhibitor, and the rest is ultrapure water. The copper etching solution has the advantages of strong compatibility, stable etching efficiency, and good etching effect, and can effectively solve the problems in the prior art.

[0006] CN118241208A discloses an etching solution for MTD and MoNb, wherein the raw materials include 10-25% oxidant, 1-5% chelating agent, 0.01-2% inhibitor, 0.01-5% etchant, 0.05-3% hydrogen peroxide stabilizer, 0.001-2% nitrogen-containing additive, 0.001-1% fluorine compound, and deionized water supplemented to 100%. The invention introduces nitrogen-containing additives and fluorine compounds into the etching solution, and adopts a weight ratio of 1:(0.5-0.7), so that the etching solution can achieve excellent etching effect on Cu, MTD alloy double-layer film and Cu, MoNb alloy double-layer film, avoiding both chamfering of MTD layer and residue of MoNb layer. The etching efficiency is improved, the etching cost is reduced, and the excellent etching effect is guaranteed at the same time.

[0007] However, the above solution does not solve the problem of the small cone angle of the Cu layer in the prior art. Therefore, how to provide an etching solution with good etching effect, no residue, and a large cone angle of the Cu layer has become an urgent problem to be solved. Summary of the invention

[0008] In view of the shortcomings of the prior art, the object of the present invention is to provide a liquid crystal panel etching solution and its application. The etching solution provided by the present invention does not contain F, is environmentally friendly, has little corrosion to IGZO, does not affect the panel characteristics, can maintain the morphology of large-angle metal corners, improves the interface opening problem caused by small CD, ensures the size of the metal cone angle, and can ensure the high copper concentration life and liquid safety, and has no etching residue.

[0009] In order to achieve the purpose of the invention, the present invention adopts the following technical solutions:

[0010] In a first aspect, the present invention provides a liquid crystal panel etching solution, the liquid crystal panel etching solution comprising a main agent and an auxiliary agent;

[0011] The main agent includes 8-18 parts of oxidant, 1-15 parts of organic acid, 1-15 parts of organic base, 0.001-3 parts of cone angle maintaining agent, 0.001-1 parts of metal interface improving agent, 0.001-3 parts of etching rate regulating agent, 0.1-5 parts of stabilizer and 3-100 parts of water in parts by weight;

[0012] The auxiliary agent comprises, by weight, 10-50 parts of organic acid, 0.5-10 parts of metal chelating agent, 1-40 parts of organic base, 0.05-5 parts of etching rate regulator, 0.1-5 parts of stabilizer, 0.01-5 parts of alloy residue remover and 30-100 parts of water.

[0013] In the main agent, the proportion of the oxidant can be 8 parts, 9 parts, 10 parts, 11 parts, 12 parts, 13 parts, 14 parts, 15 parts, 16 parts, 17 parts or 18 parts, etc., the proportion of the organic acid can be 1 part, 2 parts, 3 parts, 4 parts, 5 parts, 6 parts, 7 parts, 8 parts, 9 parts, 10 parts, 11 parts, 12 parts, 13 parts, 14 parts or 15 parts, etc., the proportion of the organic base can be 1 part, 2 parts, 3 parts, 4 parts, 5 parts, 6 parts, 7 parts, 8 parts, 9 parts The amount of the taper angle maintaining agent can be 0.001 part, 0.002 part, 0.003 part, 0.005 part, 0.01 part, 0.02 part, 0.03 part, 0.05 part, 0.1 part, 0.2 part, 0.3 part, 0.5 part, 1 part, 1.5 parts, 2 parts, 2.5 parts or 3 parts, and the amount of the metal interface improving agent can be 0.001 part, 0.002 parts, 0.003 parts, 0.005 parts, 0.01 parts, 0.02 parts, 0.03 parts, 0.05 parts, 0.1 parts, 0.2 parts, 0.3 parts, 0.5 parts or 1 parts, etc. The number of parts of the etching rate regulator can be 0.001 parts, 0.002 parts, 0.003 parts, 0.005 parts, 0.01 parts, 0.02 parts, 0.03 parts, 0.05 parts, 0.1 parts, 0.2 parts, 0.3 parts, 0.5 parts or 1 parts. The number of parts of the stabilizer can be 0.1 part, 0.5 part, 1 part, 1.5 parts, 2 parts, 2.5 parts, 3 parts, 3.5 parts, 4 parts, 4.5 parts or 5 parts, etc. The number of parts of water can be 30 parts, 40 parts, 50 parts, 60 parts, 70 parts, 80 parts, 90 parts or 100 parts, etc., but are not limited to the values ​​listed above, and other values ​​not listed within the above numerical range are equally applicable.

[0014] In the auxiliary agent, the proportion of organic acid can be 10 parts, 15 parts, 20 parts, 25 parts, 30 parts, 35 parts, 40 parts, 45 parts or 50 parts, etc., the proportion of metal chelating agent can be 0.5 parts, 1 parts, 2 parts, 3 parts, 4 parts, 5 parts, 6 parts, 7 parts, 8 parts, 9 parts or 10 parts, etc., the proportion of organic base can be 1 part, 5 parts, 10 parts, 15 parts, 20 parts, 25 parts, 30 parts, 35 parts, 40 parts, etc., the proportion of etching rate regulator can be 0.05 parts, 0.1 parts, 0.5 parts, 1 parts, 1.5 parts, 2 parts, 2.5 parts, 3 parts, 3.5 parts, 4 parts, 4.5 parts or 5 parts, etc., the stable The number of parts of the agent can be 0.1 parts, 0.5 parts, 1 parts, 1.5 parts, 2 parts, 2.5 parts, 3 parts, 3.5 parts, 4 parts, 4.5 parts or 5 parts, the number of parts of the alloy residue removing agent can be 0.01 parts, 0.02 parts, 0.03 parts, 0.05 parts, 0.1 parts, 0.5 parts, 1 parts, 1.5 parts, 2 parts, 2.5 parts, 3 parts, 3.5 parts, 4 parts, 4.5 parts or 5 parts, the number of parts of water can be 30 parts, 40 parts, 50 parts, 60 parts, 70 parts, 80 parts, 90 parts or 100 parts, but are not limited to the values ​​listed above, and other values ​​not listed within the above numerical range are also applicable.

[0015] The above-mentioned liquid crystal panel etching liquid does not contain F, is environmentally friendly, has little corrosion to IGZO, and does not affect the panel characteristics; by using a cone angle maintaining agent and a metal interface improving agent, it is possible to maintain the morphology of large-angle metal corners, improve the interface opening problem caused by a small CD, ensure the size of the metal cone angle, and at the same time ensure the safety of the liquid and no etching residue; and by adopting a mode combining a main agent and an auxiliary agent, it is possible to ensure the life of a high copper concentration.

[0016] Preferably, the main agent includes, by weight, 10-16 parts of oxidant, 3-10 parts of organic acid, 3-10 parts of organic base, 0.01-0.5 parts of cone angle maintainer, 0.01-0.5 parts of metal interface improver, 0.01-0.5 parts of etching rate regulator, 0.5-3 parts of stabilizer and 30-100 parts of water.

[0017] Preferably, the auxiliary agent comprises, by weight, 20-40 parts of organic acid, 1-5 parts of metal chelating agent, 10-35 parts of organic base, 0.1-3 parts of etching rate regulator, 0.5-3 parts of stabilizer, 0.1-3 parts of alloy residue remover and 30-100 parts of water.

[0018] Preferably, the oxidant comprises any one of hydrogen peroxide, persulfate or persulfate, or a combination of at least two thereof.

[0019] The above oxidants can effectively oxidize metals and etch away the metals.

[0020] Preferably, the organic acid in the main agent and the auxiliary agent independently includes any one or a combination of at least two of formic acid, acetic acid, propionic acid, butyric acid, valeric acid, malonic acid, succinic acid, maleic acid, maleic acid, malic acid, citric acid, tartaric acid, benzoic acid, glycine or aspartic acid, preferably any one or a combination of at least two of malonic acid, malic acid or citric acid;

[0021] Preferably, the organic bases in the main agent and the auxiliary agent independently include organic amines and / or organic alcohol amines.

[0022] The above-mentioned organic acid and organic base can chelate metal ions and stabilize hydrogen peroxide. Meanwhile, the organic acid can provide hydrogen ions required for etching, and the organic base can serve as an acidic buffer and play a role in removing the alloy layer.

[0023] Preferably, the organic amine includes any one of methylamine, ethylamine, propylamine, ethylenediamine, propylenediamine, butylenediamine, diethylaminopropylamine or dimethylaminopropylamine, or a combination of at least two thereof.

[0024] Preferably, the organic alcohol amine includes any one of ethanolamine, dimethylethanolamine, triethanolamine, N,N-dimethylethanolamine, isopropanolamine or isobutanolamine, or a combination of at least two thereof.

[0025] Preferably, the organic bases in the main agent and the auxiliary agent independently include triethanolamine and / or isopropanolamine.

[0026] Preferably, the cone angle maintaining agent includes any one of phosphoric acid, inorganic phosphates, organic phosphoric acid compounds, and sulfates, or a combination of at least two of them, preferably a combination of phosphoric acid and sulfates.

[0027] The above-mentioned cone angle maintaining agent can maintain the metal cone angle during the etching process. It can effectively maintain the large-angle metal angle morphology when combined with the metal interface improving agent, improve the interface opening problem caused by small CD, and ensure the size of the metal cone angle; in addition, by optimizing a specific combination, the product effect can be further improved.

[0028] Preferably, the organic phosphoric acid compound comprises hydroxyethylidene diphosphonic acid and / or aminotrimethylene phosphine;

[0029] Preferably, the sulfate salt comprises potassium bisulfate and ammonium sulfate.

[0030] Preferably, the metal interface improver includes any one of guanine, adenine, pyrimidine compounds, 5-methyltetrazolyl or 5-methylbenzotriazole, or a combination of at least two thereof, preferably a combination of adenine and 5-methyltetrazolyl.

[0031] The above-mentioned metal interface improver can improve the interface gap between metals and alloy chamfers during the etching process. In combination with the cone angle maintaining agent, it can effectively maintain the morphology of large-angle metal corners, improve the interface opening problem caused by small CD, and ensure the size of the metal cone angle; in addition, by optimizing a specific combination, the product effect can be further improved.

[0032] Preferably, the etching rate regulator in the main agent and the auxiliary agent independently includes any one of triazole, tetrazole, 5-aminotetrazole, 3-amino-1,2,4-triazole, and benzotriazole, or a combination of at least two thereof.

[0033] Preferably, the etching rate regulator in the main agent includes 5-aminotetrazolyl and 3-amino-1,2,4-triazole.

[0034] Preferably, the stabilizers in the main agent and the auxiliary agent independently include any one of alcohol / ether stabilizers, sulfonic acid stabilizers or urea stabilizers, or a combination of at least two of them.

[0035] Preferably, the alcohol / ether stabilizer includes any one or a combination of at least two of ethylene glycol monobutyl ether, diethylene glycol monobutyl ether, triethylene glycol monomethyl ether, triethylene glycol or polyethylene glycol;

[0036] Preferably, the sulfonic acid stabilizer includes any one of o-hydroxybenzenesulfonic acid, m-hydroxybenzenesulfonic acid, p-hydroxybenzenesulfonic acid or aminosulfonic acid, or a combination of at least two thereof;

[0037] Preferably, the urea stabilizer includes any one or a combination of at least two of semicarbazide, phenylurea or urea;

[0038] Preferably, the stabilizer in the auxiliary agent comprises a combination of ethylene glycol monobutyl ether, triethylene glycol, p-hydroxybenzenesulfonic acid and phenyl urea.

[0039] The above stabilizers can complex metal ions, reduce free radicals, and slow down the decomposition of oxidants; in addition, by selecting specific stabilizers, the product system can be effectively controlled and the product effect can be improved.

[0040] Preferably, the alloy residue remover comprises any one of ammonium hydroxide, tetramethylammonium hydroxide or ammonium chloride or a combination of at least two thereof, preferably ammonium hydroxide and ammonium chloride.

[0041] Preferably, the metal chelator comprises any one of iminodiacetic acid or its salt, glutamic acid or its salt, glycine or its salt, diethylenetriaminepentaacetic acid or its salt, or a combination of at least two thereof, preferably iminodiacetic acid.

[0042] The above metal chelating agent can effectively chelate metal ions and stabilize the oxidant.

[0043] In a second aspect, the present invention provides the use of the above-mentioned liquid crystal panel etching solution in Cu / MTD alloy etching.

[0044] In a third aspect, the present invention further provides a method for Cu / MTD alloy etching, the method comprising the following steps:

[0045] The test piece is immersed in the main agent for etching, and the auxiliary agent is added thereto according to the change of the copper ion concentration in the main agent.

[0046] The above method can ensure the stability of etching characteristics such as CDLoss (cone angle) size and MTD residue-free by adding auxiliary agents according to the copper ion concentration during the etching process, and has the safety of no temperature rise of the solution under high copper concentration load, thereby achieving high Cu concentration loading.

[0047] Preferably, the specific step of adding an auxiliary agent to the main agent according to the change of the copper ion concentration in the main agent is that for every increase of 800-1200ppm (for example, 800ppm, 850ppm, 900ppm, 950ppm, 1000ppm, 1050ppm, 1100ppm, 1150ppm or 1200ppm, etc.) in the copper ion concentration in the main agent, 1.3-1.7% (for example, 1.3%, 1.4%, 1.5%, 1.6% or 1.7%, etc.) of the auxiliary agent by mass of the main agent is added to the main agent.

[0048] Preferably, each time the auxiliary agent is added, it is added in at least 3 batches, and the amount added in each batch does not exceed half of the total amount added in a single batch.

[0049] The above specific addition method can further improve the etching effect and can further increase the maximum Cu load to ensure the high copper concentration life.

[0050] Compared with the prior art, the present invention has the following beneficial effects:

[0051] The invention provides a liquid crystal panel etching liquid, which does not contain F, is environmentally friendly, has little corrosion to IGZO, and does not affect the panel characteristics; by using a cone angle maintaining agent and a metal interface improving agent, the large-angle metal angle morphology can be maintained, the interface opening problem caused by a small CD is improved, the size of the metal cone angle is guaranteed, and the safety of the liquid is guaranteed at the same time, and no etching residue is left; and by adopting a mode of combining a main agent and an auxiliary agent, the high copper concentration life can be guaranteed. BRIEF DESCRIPTION OF THE DRAWINGS

[0052] Figure 1 This is the CD-loss and taper angle confirmation image of the test piece after etching in Application Example 1;

[0053] Figure 2This is the large CD-loss chamfer confirmation image of the test piece after etching in Application Example 1;

[0054] Figure 3 This is the residual confirmation image of the test piece after etching in Application Example 1;

[0055] Figure 4 This is the CD-loss and taper angle confirmation image of the test piece after etching in comparison with application example 1;

[0056] Figure 5 This is the large CD-loss chamfer confirmation image of the test piece after etching in comparative application example 1;

[0057] Figure 6 This is a residue confirmation image of the test piece after etching in Comparative Application Example 1. DETAILED DESCRIPTION

[0058] The technical solution of the present invention is further described below by specific implementation methods. It should be understood by those skilled in the art that the embodiments are only to help understand the present invention and should not be regarded as specific limitations of the present invention.

[0059] In the following examples, the components are numbered as follows:

[0060] A: Hydrogen peroxide;

[0061] B1: malonic acid; B2: malic acid; B3: citric acid;

[0062] C1: triethanolamine; C2: isopropanolamine;

[0063] D1: phosphoric acid; D2: potassium hydrogen sulfate; D3: ammonium sulfate;

[0064] E1: adenine; E2: 5-methyl-tetrazolyl;

[0065] F1: 5-aminotetrazolyl; F2: 3-amino-1,2,4,triazole;

[0066] G1: ethylene glycol monobutyl ether; G2: triethylene glycol; G3: p-hydroxybenzenesulfonic acid; G4: phenylurea;

[0067] H1: ammonium hydroxide; H2: ammonium chloride;

[0068] I: Iminodiacetic acid.

[0069] The following examples respectively provide a liquid crystal panel etching solution, and the specific composition ratios of each example are as follows (the sum of the components of the main agent is 100%, and the sum of the components of the auxiliary agent is 100%):

[0070]

[0071]

[0072]

[0073]

[0074]

[0075]

[0076] Each liquid crystal panel etching solution is prepared by mixing each component of the main agent with each component of the auxiliary agent.

[0077] Application Example 1

[0078] This application example provides a liquid crystal panel etching method, and the specific steps are as follows:

[0079] The test piece is immersed in the main agent of the liquid crystal panel etching solution provided in Example 1 for etching, and the auxiliary agent of the liquid crystal panel etching solution provided in Example 1 is added thereto according to the change of the copper ion concentration in the main agent (for every increase of 1000 ppm in the copper ion concentration in the main agent, 1.5% of the mass of the main agent is added to the main agent).

[0080] Among them, the copper thickness of the test piece is 5500A, the MTD thickness is 300A, the etching temperature is 32°C, and the time is 150s.

[0081] Each time the auxiliary agent is added, it is divided into 3 batches, and the amount added in each batch is one third of the total amount added in a single batch.

[0082] Application Example 2-12

[0083] Application Examples 2-12 respectively provide a liquid crystal panel etching method, and the specific steps are consistent with Application Example 1 except that the liquid crystal panel etching liquid provided in Example 1 is replaced with an equal amount of liquid crystal panel etching liquid provided in Examples 2-12.

[0084] Application Example 13

[0085] This application example provides a liquid crystal panel etching method, and the specific steps are as follows:

[0086] The test piece is immersed in the main agent of the liquid crystal panel etching solution provided in Example 1 for etching, and the auxiliary agent of the liquid crystal panel etching solution provided in Example 1 is added thereto according to the change of the copper ion concentration in the main agent (for every increase of 1000 ppm in the copper ion concentration in the main agent, 1.5% of the mass of the main agent is added to the main agent).

[0087] Among them, the copper thickness of the test piece is 5500A, the MTD thickness is 300A, the etching temperature is 32°C, and the time is 150s.

[0088] Each time the auxiliary agent is added, it should be added all at once without dividing into batches.

[0089] Comparative Application Examples 1-3

[0090] Comparative Application Examples 1-3 respectively provide a liquid crystal panel etching method, and the specific steps are consistent with Application Example 1 except that the liquid crystal panel etching liquid provided in Example 1 is replaced by an equal amount of liquid crystal panel etching liquid provided in Comparative Examples 1-3.

[0091] Comparative Application Example 4

[0092] This comparative application example provides a liquid crystal panel etching method, and the specific steps are as follows:

[0093] The test piece was immersed in the main agent of the liquid crystal panel etching solution provided in Example 1 for etching.

[0094] Among them, the copper thickness of the test piece is 5500A, the MTD thickness is 300A, the etching temperature is 32°C, and the time is 150s.

[0095] Effect comparison:

[0096] Corresponding to the etching conditions of Example 1-13 and Comparative Application Example 1-4, the etched samples were inspected and observed by scanning electron microscope: CD-loss, metal slope angle, metal line elevation angle were measured on the metal cross section, and metal residue, chamfer, and crack conditions were observed. The results are as follows:

[0097]

[0098]

[0099]

[0100]

[0101] The above results show that the etching solution provided by the present invention can maintain the large-angle metal corner morphology, improve the interface opening problem caused by small CD, ensure the size of the metal taper angle, etch without residue, and ensure the life of high copper concentration; By comparing application examples 1, 4-12 and comparative application examples 1-3, it can be found that the present invention can effectively increase the size of the metal taper angle, increase the Cu load, and improve the product effect by selecting specific taper angle maintainers, metal interface improvers and stabilizers; By comparing application examples 1, 13 and comparative application example 4, it can be found that the present invention can effectively improve the etching effect by combining the main agent and the auxiliary agent and adopting a specific auxiliary agent addition method, and can further increase the maximum Cu load and ensure the life of high copper concentration.

[0102] In addition, the electron microscope images of the substrates after etching of Application Example 1 and Comparative Application Example 1 are as follows: Figure 1-6 As shown in the figure, it can be found that in Application Example 1, the metal taper angle is large, there is no MTD chamfer, and there is no residue; while in Comparative Application Example 1, the metal taper angle is small, and there is MTD chamfer and residue.

[0103] The applicant declares that the present invention illustrates the liquid crystal panel etching solution and its application through the above-mentioned embodiments, but the present invention is not limited to the above-mentioned embodiments, that is, it does not mean that the present invention must rely on the above-mentioned embodiments to be implemented. Those skilled in the art should understand that any improvement of the present invention, equivalent replacement of the raw materials of the product of the present invention, addition of auxiliary components, selection of specific methods, etc., all fall within the protection scope and disclosure scope of the present invention.

[0104] The preferred embodiments of the present invention are described in detail above. However, the present invention is not limited to the specific details in the above embodiments. Within the technical concept of the present invention, a variety of simple modifications can be made to the technical solution of the present invention, and these simple modifications all belong to the protection scope of the present invention.

[0105] It should also be noted that the various specific technical features described in the above specific embodiments can be combined in any suitable manner without contradiction. In order to avoid unnecessary repetition, the present invention will not further describe various possible combinations.

Claims

1. A liquid crystal panel etching solution, characterized in that: The liquid crystal panel etching solution comprises a main agent and an auxiliary agent; The main agent includes 8-18 parts of oxidant, 1-15 parts of organic acid, 1-15 parts of organic base, 0.001-3 parts of cone angle maintaining agent, 0.001-1 parts of metal interface improving agent, 0.001-3 parts of etching rate regulating agent, 0.1-5 parts of stabilizer and 30-100 parts of water in parts by weight; The auxiliary agent comprises, by weight, 10-50 parts of organic acid, 0.5-10 parts of metal chelating agent, 1-40 parts of organic base, 0.05-5 parts of etching rate regulator, 0.1-5 parts of stabilizer, 0.01-5 parts of alloy residue remover and 30-100 parts of water.

2. The liquid crystal panel etching solution according to claim 1, characterized in that: The main agent includes, by weight, 10-16 parts of an oxidant, 3-10 parts of an organic acid, 3-10 parts of an organic base, 0.01-0.5 parts of a cone angle maintaining agent, 0.01-0.5 parts of a metal interface improving agent, 0.01-0.5 parts of an etching rate regulating agent, 0.5-3 parts of a stabilizer, and 30-100 parts of water; Preferably, the auxiliary agent comprises, by weight, 20-40 parts of organic acid, 1-5 parts of metal chelating agent, 10-35 parts of organic base, 0.1-3 parts of etching rate regulator, 0.5-3 parts of stabilizer, 0.1-3 parts of alloy residue remover and 30-100 parts of water.

3. The liquid crystal panel etching solution according to claim 1 or 2, characterized in that: The oxidant comprises any one of hydrogen peroxide, persulfate or persulfate, or a combination of at least two thereof; Preferably, the organic acid in the main agent and the auxiliary agent independently includes any one or a combination of at least two of formic acid, acetic acid, propionic acid, butyric acid, valeric acid, malonic acid, succinic acid, maleic acid, maleic acid, malic acid, citric acid, tartaric acid, benzoic acid, glycine or aspartic acid, preferably any one or a combination of at least two of malonic acid, malic acid or citric acid; Preferably, the organic bases in the main agent and the auxiliary agent independently include organic amines and / or organic alcohol amines.

4. The liquid crystal panel etching solution according to claim 3, characterized in that: The organic amine includes any one of methylamine, ethylamine, propylamine, ethylenediamine, propylenediamine, butylenediamine, diethylaminopropylamine or dimethylaminopropylamine, or a combination of at least two thereof; Preferably, the organic alcohol amine includes any one or a combination of at least two of ethanolamine, dimethylethanolamine, triethanolamine, N,N-dimethylethanolamine, isopropanolamine or isobutanolamine; Preferably, the organic bases in the main agent and the auxiliary agent independently include triethanolamine and / or isopropanolamine.

5. The liquid crystal panel etching solution according to any one of claims 1 to 4, characterized in that: The cone angle maintaining agent includes any one of phosphoric acid, inorganic phosphate, organic phosphoric acid compound, and sulfate, or a combination of at least two of them, preferably a combination of phosphoric acid and sulfate; Preferably, the organic phosphoric acid compound comprises hydroxyethylidene diphosphonic acid and / or aminotrimethylene phosphine; Preferably, the sulfate includes potassium bisulfate and ammonium sulfate; Preferably, the metal interface improver includes any one of guanine, adenine, pyrimidine compounds, 5-methyltetrazolyl or 5-methylbenzotriazole, or a combination of at least two thereof, preferably a combination of adenine and 5-methyltetrazolyl.

6. The liquid crystal panel etching solution according to any one of claims 1 to 5, characterized in that: The etching rate regulator in the main agent and the auxiliary agent independently includes any one of triazole, tetrazole, 5-aminotetrazole, 3-amino-1,2,4-triazole, and benzotriazole, or a combination of at least two thereof; Preferably, the etching rate regulator in the main agent includes 5-aminotetrazolyl and 3-amino-1,2,4,triazole; Preferably, the stabilizers in the main agent and the auxiliary agent independently include any one or a combination of at least two of alcohol / ether stabilizers, sulfonic acid stabilizers or urea stabilizers; Preferably, the alcohol / ether stabilizer includes any one or a combination of at least two of ethylene glycol monobutyl ether, diethylene glycol monobutyl ether, triethylene glycol monomethyl ether, triethylene glycol or polyethylene glycol; Preferably, the sulfonic acid stabilizer includes any one of o-hydroxybenzenesulfonic acid, m-hydroxybenzenesulfonic acid, p-hydroxybenzenesulfonic acid or aminosulfonic acid, or a combination of at least two thereof; Preferably, the urea stabilizer includes any one or a combination of at least two of semicarbazide, phenylurea or urea; Preferably, the stabilizer in the auxiliary agent comprises a combination of ethylene glycol monobutyl ether, triethylene glycol, p-hydroxybenzenesulfonic acid and phenyl urea.

7. The liquid crystal panel etching solution according to any one of claims 1 to 6, characterized in that: The alloy residue remover comprises any one of ammonium hydroxide, tetramethylammonium hydroxide or ammonium chloride or a combination of at least two thereof, preferably ammonium hydroxide and ammonium chloride; Preferably, the metal chelator comprises any one of iminodiacetic acid or its salt, glutamic acid or its salt, glycine or its salt, diethylenetriaminepentaacetic acid or its salt, or a combination of at least two thereof, preferably iminodiacetic acid.

8. Use of the liquid crystal panel etching solution according to any one of claims 1 to 7 in Cu / MTD alloy etching.

9. A method for etching a Cu / MTD alloy, characterized in that: The method comprises the following steps: The test piece is immersed in the main agent for etching, and the auxiliary agent is added thereto according to the change of the copper ion concentration in the main agent.

10. The Cu / MTD alloy etching method according to claim 9, characterized in that: The specific step of adding the auxiliary agent to the main agent according to the change of the copper ion concentration in the main agent is that when the copper ion concentration in the main agent increases by 800-1200ppm, 1.3-1.7% of the auxiliary agent by mass of the main agent is added to the main agent; Preferably, each time the auxiliary agent is added, it is added in at least 3 batches, and the amount added in each batch does not exceed half of the total amount added in a single batch.

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