Light-emitting chip and preparation method thereof, display panel and display device

Abstract

The invention discloses a light-emitting chip and a preparation method thereof, a display panel and a display device.The light-emitting chip comprises at least two light-emitting units, a first electrode and a second electrode, the number of the light-emitting units is at least two, and the light-emitting units are arranged in a stacked mode in the first direction; each light-emitting unit comprises a first semiconductor layer, a light-emitting functional layer and a second semiconductor layer which are sequentially stacked in the first direction; the first electrodes are arranged in one-to-one correspondence with the light-emitting units and are connected with the first semiconductor layers of the light-emitting units; the second electrode is circumferentially arranged around at least part of the light-emitting unit, and the second electrode is connected with the second semiconductor layer of the light-emitting unit; wherein the second electrodes are arranged in a stacked mode in the first direction, and the adjacent second electrodes in the first direction are connected in a bonding mode. The light-emitting chip provided by the invention can improve the aperture opening ratio so as to improve the display quality.

Description

Technical Field

[0001] The present application belongs to the field of display technology, and in particular relates to a light-emitting chip and a preparation method thereof, a display panel and a display device. Background Art

[0002] With the development of display technology, the requirements for the performance of display devices are getting higher and higher. Micro-LED technology has been increasingly widely used due to its small size and high brightness.

[0003] In the related technologies, display devices using Micro-LED technology have a problem of large aperture ratio, and improving the aperture ratio to improve display quality is still an issue that needs to be urgently addressed for display devices. Summary of the invention

[0004] The embodiments of the present application provide a light-emitting chip and a method for manufacturing the same, a display panel and a display device. The light-emitting chip can increase the aperture ratio to improve the display quality.

[0005] The first aspect of the embodiments of the present application provides a light-emitting chip, characterized by comprising:

[0006] At least two light-emitting units, the light-emitting units are stacked along a first direction, and each of the light-emitting units comprises a first semiconductor layer, a light-emitting functional layer, and a second semiconductor layer which are sequentially stacked along the first direction;

[0007] A first electrode is disposed corresponding to each of the light-emitting units and connected to the first semiconductor layer of each of the light-emitting units;

[0008] A second electrode is disposed around at least a portion of the circumference of the light-emitting unit, and the second electrode is connected to the second semiconductor layer of the light-emitting unit;

[0009] The second electrodes are stacked along the first direction, and the second electrodes adjacent to each other along the first direction are bonded and connected.

[0010] According to the aforementioned embodiment of the first aspect of the present invention, the second electrode is arranged around part of the circumference of the light-emitting unit, and the light-emitting chip further includes a shielding portion, and the shielding portion and the projection of the second electrode in the first direction jointly surround the projection of the light-emitting unit in the first direction.

[0011] According to any one of the aforementioned embodiments of the second aspect of the present invention, it further includes an opening portion, wherein the opening portion corresponds one-to-one to the first semiconductor layer and exposes the first semiconductor layer, and the first electrode is located in the opening portion and connected to the first semiconductor layer.

[0012] According to any one of the aforementioned embodiments of the second aspect of the present invention, the light emitting chip comprises a first side and a second side arranged along the first direction, the opening portion comprises a first end and a second end, the first end is located on the first side, and the second end is in contact with the first semiconductor layer;

[0013] Preferably, the outer diameter of the opening portion gradually decreases from the first end to the second end.

[0014] According to any one of the aforementioned embodiments of the second aspect of the present invention, it further includes a housing portion and a barrier layer, the housing portion penetrates part of the light emitting unit along the first direction, the barrier layer includes a first portion and a second portion, the first portion and the light emitting unit are stacked along the first direction, the second portion is located in the housing portion, the second portion covers the surface of the first semiconductor layer facing the housing portion and the surface of the light emitting functional layer facing the housing portion, and exposes at least part of the surface of the second semiconductor layer facing the peripheral side of the light emitting unit, the second electrode is located on a side of the second portion away from the light emitting unit, and is electrically connected to at least part of the surface of the second semiconductor layer facing the peripheral side of the light emitting unit;

[0015] Preferably, the second electrode comprises a first end portion located on a side close to the second semiconductor layer and a second end portion located on a side close to the first semiconductor layer, the outer diameter of the second end portion is larger than the outer diameter of the first end portion, and the first end portions or the second end portions of adjacent second electrodes are arranged adjacent to each other, or the first end portion of one second electrode is arranged adjacent to the second end portion of another second electrode;

[0016] Preferably, the first part and the second part are arranged continuously.

[0017] According to any one of the aforementioned embodiments of the second aspect of the present invention, the light-emitting chip includes light-emitting units of at least three colors;

[0018] Preferably, the light-emitting units of three colors include a red light-emitting unit, a green light-emitting unit and a blue light-emitting unit, and the green light-emitting unit is located between the red light-emitting unit and the blue light-emitting unit.

[0019] An embodiment of the second aspect of the embodiments of the present application provides a display panel, comprising any one of the light-emitting chips provided by the implementation of the first aspect of the present application.

[0020] Preferably, it further comprises a driving substrate, a plurality of the light-emitting chips are formed on one side of the driving substrate, the plurality of the light-emitting chips are arranged along a second direction, the second direction is parallel to the plane where the driving substrate is located, and the light-emitting chips adjacent to each other along the second direction are connected via second electrodes in the light-emitting chips;

[0021] Preferably, the second electrodes of the light-emitting chips adjacent to each other along the second direction have an integrated structure.

[0022] The third aspect of the present application provides a method for preparing a light-emitting chip, comprising:

[0023] A first semiconductor layer, a light-emitting functional layer, and a second semiconductor layer are stacked along a first direction on a base substrate to form a light-emitting unit;

[0024] A receiving portion penetrating a portion of the light-emitting unit is formed in at least a portion of the circumference of the light-emitting unit, the receiving portion is arranged around at least a portion of the circumference of the light-emitting unit, and a second electrode is formed on a side of the receiving portion away from the light-emitting unit, the second electrode is insulated from the first semiconductor layer and the light-emitting functional layer, and the second electrode is connected to the second semiconductor layer to form a preformed structure;

[0025] At least two of the preformed structures are stacked along the first direction, so that the light-emitting units are stacked along the first direction, and the second electrodes are stacked along the first direction, and the second electrodes adjacent to each other along the first direction are bonded and connected.

[0026] According to the aforementioned embodiment of the third aspect of the present invention, the second semiconductor layer, the light-emitting functional layer and the first semiconductor layer are stacked in sequence in a direction away from the base substrate;

[0027] The step of stacking at least two of the preformed structures along the first direction so that the light-emitting units are stacked along the first direction, and the second electrodes are stacked along the first direction, and bonding the second electrodes adjacent to each other along the first direction comprises:

[0028] Disposing a temporary substrate on a side of a preset preformed structure away from the base substrate, transferring the preset preformed structure from the base substrate to the temporary substrate, and making the second semiconductor layer in the preset preformed structure located on a side of the first semiconductor layer away from the temporary substrate;

[0029] Disposing the preset preformed structure on a side of another preformed structure away from the substrate;

[0030] removing the temporary substrate on one side of the preformed structure; or,

[0031] Arrange the two preformed structures opposite to each other on one side of the substrate;

[0032] removing the substrate substrate on a side of one of the preformed structures facing away from another preformed structure;

[0033] Preferably, a receiving portion penetrating a portion of the light-emitting unit is formed in at least a portion of the circumference of the light-emitting unit, the receiving portion is arranged around at least a portion of the circumference of the light-emitting unit, and a second electrode is formed on a side of the receiving portion away from the light-emitting unit, the second electrode is insulated from the first semiconductor layer and the light-emitting functional layer, and the second electrode is connected to the second semiconductor layer, so as to form a preformed structure. The steps include:

[0034] Forming the accommodation portion on the light-emitting unit, which penetrates a portion of the second semiconductor layer and penetrates the first semiconductor layer and the light-emitting functional layer;

[0035] A barrier layer is formed on a side of the light emitting unit away from the base substrate, the barrier layer comprising a first portion and a second portion, the first portion is in contact with a surface of the light emitting unit away from the base substrate, and the second portion is located on a side of the light emitting unit facing the receiving portion and covers a surface of the first semiconductor layer facing the receiving portion and a surface of the light emitting functional layer facing the receiving portion;

[0036] removing a portion of the second semiconductor layer exposed by the receiving portion;

[0037] forming the second electrode on a side of the second portion away from the light emitting unit and on a surface of the second semiconductor layer facing the peripheral side of the light emitting unit;

[0038] Preferably, the method further comprises planarizing a surface of the barrier layer on one side away from the base substrate and a surface of the second electrode on one side away from the base substrate, so that the roughness of the surface of the barrier layer and the second electrode on one side away from the base substrate is less than 3 nm;

[0039] or,

[0040] The receiving portion is formed on the light emitting unit and penetrates a portion of the second semiconductor layer and the first semiconductor layer and the light emitting functional layer, wherein the light emitting unit comprises a first insulating region disposed adjacent to the receiving portion;

[0041] Performing insulation treatment on the first insulating region, including implementing insulation of the first insulating region through an ion implantation process;

[0042] removing a portion of the second semiconductor layer exposed by the receiving portion;

[0043] forming the second electrode on a side of the second portion away from the light emitting unit and on a surface of the second semiconductor layer facing the peripheral side of the light emitting unit;

[0044] Preferably, it also includes:

[0045] forming openings corresponding to the light-emitting units one by one, the openings being used to expose the first semiconductor layer of the light-emitting units;

[0046] A first electrode is formed in the opening, and the first electrode is insulated from the light-emitting functional layer and the second semiconductor layer.

[0047] An embodiment of the fourth aspect of the embodiments of the present application provides a display device, including any light-emitting chip provided by the first aspect of the present application, or including the display panel provided by the second aspect of the present application.

[0048] The light-emitting chip provided in the present application includes at least two light-emitting units, and also includes a first electrode and a second electrode, wherein the first electrode corresponds to the light-emitting unit one by one and is electrically connected to the first semiconductor layer in the light-emitting unit, and the second electrode is arranged around at least part of the circumference of the light-emitting unit and is electrically connected to the second semiconductor layer in the light-emitting unit, and the second electrode in the light-emitting chip is arranged along the first direction, and the adjacent second electrodes are bonded to each other, thereby reducing the space occupied by the second electrode in the light-emitting chip, helping to increase the proportion of the light-emitting area in the light-emitting chip, and thus improving the aperture ratio. At the same time, since the second electrode is arranged around the light-emitting unit, the second electrode can play a role in isolating adjacent light-emitting chips, and can improve the crosstalk problem between adjacent light-emitting chips, that is, the second electrode is reused as a structure for shading to block the crosstalk between adjacent light-emitting chips, thereby omitting part or all of the structure originally used for shading, further reducing the spacing between adjacent light-emitting chips, and increasing the area proportion of the light-emitting area, thereby improving the aperture ratio, helping to increase the pixel density and display quality. BRIEF DESCRIPTION OF THE DRAWINGS

[0049] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments of the present application will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0050] Figure 1 is a schematic structural diagram of a light-emitting chip provided in an embodiment of the present application;

[0051] Figure 2 yes Figure 1 Sectional view along P-P';

[0052] Figure 3 is a schematic structural diagram of another light-emitting chip provided in an embodiment of the present application;

[0053] Figure 4 yes Figure 1 Sectional view along P-P';

[0054] Figure 5 is a structural schematic diagram of a display panel provided in an embodiment of the present application;

[0055] Figure 6 yes Figure 5 Enlarged view of the middle Q region;

[0056] Figure 7 yes Figure 6 Sectional view along the middle line M-M';

[0057] Figure 8 yes Figure 5 Another zoomed-in view of the mid-Q region;

[0058] Fig. 9 is a flow chart of a method for preparing a display panel provided in an embodiment of the present application;

[0059] Figures 10 to 22 is a schematic diagram of film layer changes in a method for preparing a display panel provided in an embodiment of the present application;

[0060] Fig.23 is a schematic diagram of the structure of a display panel provided in an embodiment of the present application;

[0061] Fig.24 It is a structural schematic diagram of a display device provided in an embodiment of the present application.

[0062] In the attached figure:

[0063] 1-light-emitting chip; 10-light-emitting unit; x-first direction; y-second direction; 101-first semiconductor layer; 102-light-emitting functional layer; 103-second semiconductor layer; 11-first electrode; 12-second electrode; 121-first end; 122-second end; 13-shielding portion; 14-barrier layer; 141-first part; 142-second part; 143-third part; 15-opening portion; 151-first end; 152-second end; 16-accommodating portion; 17-auxiliary barrier layer; 171-first barrier portion; 172-second barrier portion; A1-connection area; A2-bonding area; 2-display panel; 21-driving substrate; 3-base substrate; 4-temporary substrate; 5-display device. DETAILED DESCRIPTION

[0064] The features and exemplary embodiments of various aspects of the application will be described in detail below. In the detailed description below, many specific details are proposed to provide a comprehensive understanding of the application. However, it is obvious to those skilled in the art that the application can be implemented when some details in these specific details are not needed. The following description of the embodiments is only to provide a better understanding of the application by illustrating the example of the application.

[0065] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the statement "include..." do not exclude the existence of other identical elements in the process, method, article or device including the elements.

[0066] AR devices need to match the intensity of the ambient light around the user, project virtual images into the eyes, and achieve the superposition of virtual and real-world images in the human eye imaging system (retina). Considering the requirements of near-eye display field of view (FOV) and imaging fineness (overcoming the screen window effect), extremely high brightness and extremely high pixel density displays are required. Micro-LED has shown great advantages in the field of AR devices due to its small size and high brightness. The inventors have found through research that a shading layer needs to be set between adjacent light-emitting chips to improve the crosstalk problem, but the shading layer occupies a certain space, which will cause the problem of low aperture ratio. Based on the research on the above problems, the inventors provide a light-emitting chip and its preparation method, a display panel and a display device to improve the aperture ratio and display quality.

[0067] In order to better understand this application, Figures 1 to 24 The light-emitting chip and its manufacturing method, the display panel and the display device in the embodiments of the present application are described in detail.

[0068] See also Figure 1 and Figure 2The embodiment of the present application provides a light-emitting chip 1, comprising a first electrode 11, a second electrode 12 and at least two light-emitting units 10. The light-emitting units 10 are stacked along a first direction x, and each light-emitting unit 10 comprises a first semiconductor layer 101, a light-emitting functional layer 102 and a second semiconductor layer 103 which are sequentially stacked along the first direction x. The first electrode 11 is arranged in a one-to-one correspondence with the light-emitting units 10, and is connected to the first semiconductor layer 101 of each light-emitting unit 10. The second electrode 12 is arranged around at least part of the circumference of the light-emitting unit 10, and the second electrode 12 is connected to the second semiconductor layer 103 of the light-emitting unit 10. Among them, each second electrode 12 is stacked along the first direction x, and the second electrodes 12 adjacent to each other along the first direction x are bonded.

[0069] The light-emitting chip 1 provided in the present application includes at least two light-emitting units 10, and also includes a first electrode 11 and a second electrode 12. The first electrode 11 corresponds to the light-emitting unit 10 one by one and is electrically connected to the first semiconductor layer 101 in the light-emitting unit 10. The second electrode 12 is arranged around at least part of the circumference of the light-emitting unit 10 and is electrically connected to the second semiconductor layer 103 in the light-emitting unit 10. The second electrodes 12 in the light-emitting chip 1 are arranged along the first direction x, and the adjacent second electrodes 12 are bonded and connected, so that the space occupied by the second electrodes 12 in the light-emitting chip 1 can be reduced, which helps to increase the proportion of the light-emitting area in the light-emitting chip 1, thereby improving the aperture ratio. At the same time, since the second electrode 12 is arranged around the light-emitting unit 10, the second electrode 12 can play a role in isolating adjacent light-emitting chips 1, which can improve the crosstalk problem between adjacent light-emitting chips 1, that is, the second electrode 12 is reused as a structure for shading to block the crosstalk between adjacent light-emitting chips 1, so that part or all of the original structure for shading can be omitted, and the spacing between adjacent light-emitting chips 1 can be further reduced, and the area proportion of the light-emitting area can be increased, thereby improving the aperture ratio, which helps to increase the pixel density and display quality.

[0070] In the above embodiment, the light emitting chip 1 includes a light emitting area and a light shielding area, the light emitting area includes a light emitting unit 10, the light shielding area includes a second electrode 12 and a first electrode 11, and the projection shape of the light emitting area in the first direction x is a polygon, a circle or an ellipse. It can also be a special shape, which is not particularly limited in this application.

[0071] In a possible implementation, Figure 1 and Figure 2 As shown, the second electrode 12 is arranged around the circumference of the light emitting unit 10 .

[0072] In the above embodiment, the second electrode 12 is an annular structure arranged circumferentially around the light-emitting unit 10. The second electrodes 12 of adjacent light-emitting chips 1 can realize synchronous power supply of the second electrodes 12 of multiple light-emitting chips 1 through contact electrical connection, thereby saving the number of power supply lines to simplify the structure. At the same time, the adjacent light-emitting chips 1 can achieve crosstalk isolation through the second electrode 12, which greatly improves the optical performance. In addition, the preparation of the structure for shading between adjacent light-emitting chips 1 can be omitted, thereby reducing the spacing between adjacent light-emitting chips 1, which helps to increase the proportion of the light-emitting area and thus improve the display effect.

[0073] In a possible implementation, Figure 3 As shown, the second electrode 12 is arranged around part of the circumference of the light emitting unit 10, and the light emitting chip 1 further includes a shielding portion 13, and the shielding portion 13 and the projection of the second electrode 12 in the first direction x jointly surround the projection of the light emitting unit 10 in the first direction x.

[0074] In the above embodiment, the second electrode 12 is arranged around a portion of the circumference of the light-emitting unit 10, and the remaining portion of the circumference of the light-emitting unit 10 is shielded by the shielding portion 13 to achieve the anti-cross-light effect between adjacent light-emitting chips 1. In this embodiment, since the second electrode 12 in the light-emitting chip 1 is stacked and bonded along the first direction x, it is possible to achieve synchronous power supply of multiple light-emitting units 10 in one light-emitting chip 1. When the second electrodes 12 between different light-emitting chips 1 are interconnected, the synchronous power supply of multiple second electrodes 12 can be achieved synchronously, thereby further saving the number of power supply lines. At the same time, when the width of the shielding portion 13 is the same as the width of the second electrode 12, it is equivalent to using the space previously used to set the structure for shading to simultaneously set the second electrode 12 and the shielding portion 13, thereby improving the utilization rate of the adjacent space, increasing the proportion of the light-emitting area, and thus improving the display effect.

[0075] In a possible implementation, Figure 2 As shown, it also includes an opening portion 15 , which corresponds to the first semiconductor layer 101 one by one and exposes the first semiconductor layer 101 , and the first electrode 11 is located in the opening portion 15 and connected to the first semiconductor layer 101 .

[0076] In the above embodiment, the first electrode 11 is connected to the first semiconductor layer 101 through the opening 15. Specifically, the opening 15 exposes the first semiconductor layer 101. Forming the first electrode 11 in the opening 15 can directly achieve contact connection between the first electrode 11 and the first semiconductor layer 101.

[0077] In a feasible implementation, the light emitting chip 1 includes a first side and a second side arranged along a first direction x, the opening portion 15 includes a first end 151 and a second end 152 , the first end 151 is located on the first side, and the second end 152 contacts the first semiconductor layer 101 .

[0078] In the above embodiment, the first end 151 of each opening portion 15 is located on the first side of the light-emitting chip 1, so that one end of the first electrode 11 located in the opening portion 15 is located on the first side of the light-emitting chip 1, so that the electrical connection with each light-emitting unit 10 can be achieved from the first side of the light-emitting chip 1, which can simplify the connection process.

[0079] In the above embodiment, the outer diameter of the opening 15 gradually decreases from the first end 151 to the second end 152. The shape of the opening 15 is determined by the manufacturing process, and the manufacturing process of the opening 15 with the above shape is simple, thereby simplifying the manufacturing cost of the light emitting chip 1.

[0080] In a possible implementation, Figure 2 As shown, it also includes a housing portion 16 and a barrier layer 14, the housing portion 16 penetrates part of the light emitting unit 10 along the first direction x, the barrier layer 14 includes a first portion 141 and a second portion 142, the first portion 141 and the light emitting unit 10 are stacked along the first direction x, the second portion 142 is located in the housing portion 16, the second portion 142 covers the surface of the first semiconductor layer 101 facing the housing portion 16 and the surface of the light emitting functional layer 102 facing the housing portion 16, and exposes at least part of the surface of the second semiconductor layer 103 facing the peripheral side of the light emitting unit 10, the second electrode 12 is located on the side of the second portion 142 away from the light emitting unit 10, and is electrically connected to at least part of the surface of the second semiconductor layer 103 facing the peripheral side of the light emitting unit 10.

[0081] In the above embodiment, the first portion 141 of the barrier layer 14 can achieve insulation between the light-emitting units 10 adjacent to each other along the first direction x. The second portion 142 of the barrier layer 14 is located in the accommodation portion 16 and covers the surface of the first semiconductor layer 101 facing the accommodation portion 16 and the surface of the light-emitting functional layer 102 facing the accommodation portion 16, thereby achieving insulation between the second electrode 12 and the first semiconductor layer 101 and the light-emitting functional layer 102. At the same time, the second portion 142 also exposes part or all of the surface of the second semiconductor layer 103 facing the peripheral side of the light-emitting unit 10, so that the second electrode 12 located on the side of the second portion 142 away from the light-emitting unit 10 can contact part or all of the surface of the second semiconductor layer 103 facing the peripheral side of the light-emitting unit 10, thereby achieving electrical connection between the second electrode 12 and the second semiconductor layer 103.

[0082] In the above embodiment, the first portion 141 and the second portion 142 are continuously arranged, so that the barrier layer 14 has good continuity and better insulation effect.

[0083] In a possible implementation, Figure 2 As shown, the second electrode 12 includes a first end 121 located near the second semiconductor layer 103 and a second end 122 located near the first semiconductor layer 101 . The outer diameter of the second end 122 is greater than the outer diameter of the first end 121 .

[0084] In the above embodiment, the light-emitting unit 10 of each color is grown on a different substrate, the second semiconductor layer 103 can be directly located on the substrate, and the first semiconductor layer 101 is located on the side of the second semiconductor layer 103 away from the substrate. In the process of preparing the accommodation portion 16, due to the limitation of the preparation process, an inclined side wall is usually formed, and the angle formed between the side wall and the surface of the first semiconductor layer facing the second semiconductor layer is an obtuse angle, and the angle where the opening is located on the side away from the accommodation portion is an obtuse angle, and the second electrode 12 is adapted to the shape of the accommodation portion 16, so that the outer diameter of the second end portion 122 is greater than the outer diameter of the first end portion 121.

[0085] In a feasible implementation, the first ends 121 or the second ends 122 of the adjacent second electrodes 12 are arranged adjacent to each other. That is, two light-emitting units 10 adjacent to each other along the first direction x include a first light-emitting unit and a second light-emitting unit. When the first ends 121 of the adjacent second electrodes 12 are arranged adjacent to each other, the second semiconductor layer 103 in the first light-emitting unit is located on the side of the second semiconductor layer 103 in the second light-emitting unit away from the first semiconductor layer 101 in the second light-emitting unit, which is not shown in the figure; or Figure 4 As shown, when the second ends 122 of adjacent second electrodes 12 are arranged adjacent to each other, the first semiconductor layer 101 in the first light-emitting unit is located on a side of the first semiconductor layer 101 in the second light-emitting unit away from the second semiconductor layer 103 in the second light-emitting unit.

[0086] Or, if Figure 2 As shown, the first end 121 of one second electrode 12 is disposed adjacent to the second end 122 of another second electrode 12. That is, two light-emitting units 10 adjacent to each other along the first direction x include a first light-emitting unit and a second light-emitting unit, the first end of the second electrode 12 corresponding to the first light-emitting unit and the second end 122 of the second electrode 12 corresponding to the second light-emitting unit are disposed adjacent to each other, and the second semiconductor layer 103 in the first light-emitting unit is located on the side of the first semiconductor layer 101 in the second light-emitting unit away from the second semiconductor layer 103 in the second light-emitting unit.

[0087] Specifically, the arrangement structure of the light-emitting units 10 in the light-emitting chip 1 can be selected according to the actual manufacturing process, and the present application does not make any special limitation on this.

[0088] like Figure 2 As shown, when each light-emitting unit 10 in the light-emitting chip 1 satisfies that the first end 121 of a second electrode 12 is disposed adjacent to the second end 122 of another second electrode 12, the barrier layer 14 may further include a third portion 143, and the third portion 143 is located on the inner wall of a portion of the opening 15, and is used to achieve insulation between the first electrode 11 and the light-emitting functional layer 102 and the second semiconductor layer 103, and to achieve insulation between one of the first electrodes 11 corresponding to one light-emitting unit 10 and the first semiconductor layer 101 in the other light-emitting unit 10. Some of the openings 15 only penetrate the first portion 141 of the barrier layer 14 and contact the first semiconductor layer 101. At this time, the inner wall of the opening 15 does not need to form the third portion 143, for example Figure 2 The opening portion 15 is formed at the top of the light emitting chip 1 .

[0089] like Figure 4 As shown, when the two light-emitting units 10 close to the first side in the light-emitting chip 1 meet the requirement that the second end portions 122 of the adjacent second electrodes 12 are arranged adjacent to each other, the light-emitting chip 1 may further include an auxiliary barrier layer 17, the auxiliary barrier layer 17 is located on the first side of the light-emitting chip 1 facing the light-emitting unit 10 close to the first side, the auxiliary barrier layer 17 includes a first barrier portion 171 and a second barrier portion 172, the first barrier portion 171 and the light-emitting unit 10 are stacked along the first direction x, the second barrier portion 172 is located on the side wall of the opening portion 15, and is used to achieve insulation between the first electrode 11 and the light-emitting functional layer 102 and the second semiconductor layer 103, and to achieve insulation between a first electrode 11 corresponding to one light-emitting unit 10 and the first semiconductor layer 101 in the other light-emitting unit 10.

[0090] In a possible implementation, Figure 4As shown, the light-emitting units 10 adjacent to each other along the first direction x include a connection area A1 and a bonding area A2, and the connection area A1 and the bonding area A2 are arranged in a direction parallel to the first portion 141 and toward a side plane of any one of the light-emitting units 10. In the connection area A1, the adjacent light-emitting units 10 are contacted and connected with the first semiconductor layer 101 / the second semiconductor layer 103 through the barrier layer 14. In the bonding area, the adjacent light-emitting units 10 are bonded and connected through the adjacent second electrodes 12. Specifically, the material of the barrier layer 14 may include silicon nitride and silicon oxide, the first semiconductor layer 101 may include a P-type semiconductor layer, the second semiconductor layer 103 may include an N-type semiconductor layer, the barrier layer 14 and the first semiconductor layer 101 / the second semiconductor layer 103 are mutually connected with different materials, the second electrode 12 may include a copper material, and the adjacent second electrodes 12 are homogeneously bonded. As a result, the connection modes of the connection area and the bonding area between the adjacent light-emitting units 10 are different, which helps to improve the connection strength and the stability of the light-emitting chip 1.

[0091] In a feasible implementation, the light emitting chip 1 includes light emitting units 10 of at least three colors.

[0092] Specifically, the light-emitting chip 1 may include three light-emitting units 10, and the colors of the three light-emitting units 10 are different. The three light-emitting units 10 are stacked along the first direction x, so that each light-emitting chip 1 can emit multi-color and colorful light, which helps to improve the mixed light effect and help to improve the integration.

[0093] In the above embodiment, the three-color light-emitting units 10 include a red light-emitting unit 10 , a green light-emitting unit 10 and a blue light-emitting unit 10 , and the green light-emitting unit 10 is located between the red light-emitting unit 10 and the blue light-emitting unit 10 .

[0094] Specifically, one end of each first electrode 11 may be located on a side of the red light emitting unit 10 that is away from the blue light emitting unit 10 .

[0095] The present application also provides a display panel 2, such as Figure 5 and Figure 6 As shown, it includes any one of the light-emitting chips 1 provided in the above embodiments of the present application.

[0096] In the display panel 2 provided in the present application, a light-emitting chip 1 with stacked light-emitting units 10 is used. Each light-emitting unit 10 can be used as a pixel in the display panel 2. The light-emitting chip 1 with stacked light-emitting units 10 of three colors only occupies one-third of the area of ​​the light-emitting units 10 of three colors arranged laterally, thereby greatly improving the distribution density of pixels in the display panel 2. At the same time, the stacked arrangement of the light-emitting units 10 of three colors can improve the pixel mixing effect. The structure for shading can be omitted between adjacent light-emitting chips 1, thereby reducing the spacing between adjacent light-emitting units 10, improving the distribution density of the light-emitting chip 1, and improving the aperture ratio. At the same time, the second electrodes 12 of multiple light-emitting units 10 in each light-emitting chip 1 are bonded and connected, and the second electrodes 12 can be distributed circumferentially around each light-emitting unit 10, and reused as a structure for shading, thereby playing a role in improving the crosstalk between adjacent light-emitting chips 1, which helps to improve the display quality of the display panel 2.

[0097] In a possible implementation, Figure 6 As shown, it also includes a driving substrate 21, and a plurality of light-emitting chips 1 are formed on one side of the driving substrate 21. The plurality of light-emitting chips 1 are arranged along a second direction y, and the second direction y is parallel to the plane where the driving substrate 21 is located. The light-emitting chips 1 adjacent to each other along the second direction y are connected through the second electrode 12 in the light-emitting chip 1.

[0098] In the above embodiment, the light-emitting chips 1 adjacent to each other along the second direction y are connected via the second electrode 12, so that the second electrode 12 of the entire display panel 2 is an integral structure, so as to realize centralized power supply, thereby omitting the number of power supply lines, saving preparation costs and reducing wiring difficulty.

[0099] In a possible implementation, Figure 8 As shown, the second electrodes 12 of the light-emitting chips 1 adjacent to each other along the second direction y have an integrated structure. This simplifies the manufacturing process, improves the connection reliability, and helps reduce the resistance of the second electrode 12. Alternatively, Figure 6 As shown, the second electrodes 12 between adjacent light-emitting chips 1 may be connected by bonding, which is not particularly limited in the present application.

[0100] The present application also provides a method for preparing the light-emitting chip 1, such as Fig. 9 As shown, including:

[0101] S100, such as Fig.10 As shown, a first semiconductor layer 101 , a light-emitting functional layer 102 , and a second semiconductor layer 103 are stacked along a first direction x on a base substrate 3 to form a light-emitting unit 10 .

[0102] Specifically, the first semiconductor layer 101 may be located on a side of the second semiconductor layer 103 facing the base substrate 3 or on a side away from the base substrate 3 , which is not particularly limited in the present application.

[0103] S200, such as Fig.10 and Fig.11 As shown, a receiving portion 16 penetrating part of the light-emitting unit 10 is formed in at least a partial area of ​​the circumference of the light-emitting unit 10, the receiving portion 16 is arranged around at least a portion of the circumference of the light-emitting unit 10, and a second electrode 12 is formed on a side of the receiving portion 16 away from the light-emitting unit 10, the second electrode 12 is insulated from the first semiconductor layer 101 and the light-emitting functional layer 102, and the second electrode 12 is connected to the second semiconductor layer 103 to form a preformed structure.

[0104] The preformed structure includes a light emitting unit 10 and a second electrode 12 .

[0105] S300, such as Fig.12 As shown, at least two preformed structures are stacked along the first direction x, so that the light-emitting units 10 are stacked along the first direction x, and the second electrodes 12 are stacked along the first direction x, and the second electrodes 12 adjacent to each other along the first direction x are bonded and connected.

[0106] In the above preparation method, the light-emitting unit 10 can be prepared by step S100. Each time step S100 is performed, a light-emitting unit 10 of one color can be prepared. When the light-emitting chip 1 includes light-emitting units 10 of three colors, step S100 can be repeated three times.

[0107] In the above preparation method, a second electrode 12 can be formed through step S200, and the second electrode 12 is arranged around at least part of the circumference of the light unit, so that the second electrode 12 can play a role in isolating adjacent light-emitting chips 1, and can improve the crosstalk problem between adjacent light-emitting chips 1, that is, the second electrode 12 is reused as a structure for shading to block the crosstalk between adjacent light-emitting chips 1, so that part or all of the original structure for shading can be omitted, and the distance between adjacent light-emitting chips 1 can be further reduced, and the area ratio of the light-emitting area is increased, thereby improving the aperture ratio, which helps to increase the pixel density and improve the display quality.

[0108] In the above preparation method, step S300 is used to stack the light-emitting unit 10 and the second electrode 12 respectively along the first direction x, so that the second electrode 12 in the light-emitting chip 1 is arranged along the first direction x, and adjacent second electrodes 12 are bonded and connected, thereby reducing the space occupied by the second electrode 12 in the light-emitting chip 1, helping to increase the proportion of the light-emitting area in the light-emitting chip 1, and further improving the aperture ratio.

[0109] In a possible implementation, Fig.12As shown, the second semiconductor layer 103, the light-emitting functional layer 102 and the first semiconductor layer 101 are stacked in sequence in a direction away from the base substrate 3, and step S300 includes:

[0110] S311, such as Fig.13 or Fig.14 As shown, a temporary substrate 4 is set on a side of a preset preformed structure away from the substrate 3, the preset preformed structure is transferred from the substrate 3 to the temporary substrate 4, and the second semiconductor layer 103 in the preset preformed structure is located on the side of the first semiconductor layer 101 away from the temporary substrate 4.

[0111] S312, such as Fig.15 As shown, the preset pre-formed structure is arranged on a side of another pre-formed structure facing away from the substrate base plate 3 .

[0112] Specifically, in step S100, the light-emitting units 10 of three colors can be formed in three steps, and then Fig.13 and Fig.14 The preformed structures in the embodiment are transferred to the temporary substrate 4 respectively, and then Fig.15 and Fig.16 As shown, Fig.13 and Fig.14 The preformed structure is transferred to Fig.11 The preformed structure in the embodiment is away from the substrate 3 to form a light emitting chip 1. S313, as Fig.17 and Fig.12 As shown, the temporary substrate 4 on one side of the preset preformed structure is removed.

[0113] Specifically, Fig.15 As shown, in Fig.13 The preformed structure is transferred to Fig.11 After the preformed structure in the embodiment is away from the substrate 3, the Fig.17 As shown, the transfer substrate 4 is removed to facilitate the subsequent transfer of the preformed structure; Fig.16 As shown, in Fig.14 The preformed structure is transferred to Fig.17 After the preformed structure in the embodiment is away from the substrate 3, the Fig.12 As shown, the transfer substrate 4 is removed to facilitate the subsequent transfer of the preformed structure.

[0114] In the above embodiment, if Fig.16 As shown, the temporary substrate 4 can be used to stack adjacent light-emitting units 10 in the light-emitting chip 1 in the same direction, that is, in the light-emitting unit 10 located below, the second semiconductor layer 103 is located on the side of the first semiconductor layer 101 away from the upper light-emitting unit 10, and in the light-emitting unit 10 located above, the second semiconductor layer 103 is located on the side of the first semiconductor layer 101 close to the lower light-emitting unit 10.

[0115] Alternatively, step S300 includes:

[0116] S321, such as Fig.18 As shown, the two preformed structures are arranged opposite to each other at the sides facing away from the substrate base plate 3 .

[0117] S322, such as Fig.19 As shown, the substrate base plate 3 on the side of one preformed structure facing away from the other preformed structure is removed.

[0118] In the above embodiment, adjacent light-emitting units 10 can be stacked in different directions, that is, in the light-emitting unit 10 located below, the second semiconductor layer 103 is located on the side of the first semiconductor layer 101 away from the upper light-emitting unit 10, and in the light-emitting unit 10 located above, the second semiconductor layer 103 is located on the side of the first semiconductor layer 101 away from the lower light-emitting unit 10.

[0119] In a feasible implementation manner, step S200 includes:

[0120] S211, such as Fig. 20 As shown, a receiving portion 16 is formed on the light emitting unit 10 , penetrating a portion of the second semiconductor layer 103 and penetrating the first semiconductor layer 101 and the light emitting functional layer 102 .

[0121] S212, such as Fig. 20 As shown, a barrier layer 14 is formed on the side of the light-emitting unit 10 facing away from the base substrate 3, and the barrier layer 14 includes a first part 141 and a second part 142. The first part 141 is in contact with the surface of the side of the light-emitting unit 10 facing away from the base substrate 3, and the second part 142 is located on the side of the light-emitting unit 10 facing the accommodating portion 16 and covers the surface of the first semiconductor layer 101 facing the accommodating portion 16 and the surface of the light-emitting functional layer 102 facing the accommodating portion 16.

[0122] S213, such as Fig.21 As shown, the portion of the second semiconductor layer 103 exposed by the receiving portion 16 is removed.

[0123] Specifically, the receiving portion 16 may penetrate the second semiconductor layer 103 through an etching process.

[0124] S214, please refer again Fig.11 A second electrode 12 is formed on a side of the second portion 142 away from the light emitting unit 10 and on a surface of the second semiconductor layer 103 facing the peripheral side of the light emitting unit 10 .

[0125] In the above embodiment, the second electrode 12 is insulated from the first semiconductor layer 101 and the light-emitting functional layer 102 by the second portion 142 in the barrier layer 14. The barrier layer 14 has a good insulation effect and a low preparation cost.

[0126] In the above embodiment, in step S211, the accommodation portion 16 may not extend to the second semiconductor layer 103 along the first direction x, or the accommodation portion 16 may first penetrate a portion of the second semiconductor layer 103, and then form the second portion 142, and then etch the region of the second semiconductor layer 103 that is opposite to the accommodation portion 16 along the first direction x to penetrate the second semiconductor layer 103, and finally form the second electrode 12. The above method can ensure that the second portion 142 will not completely cover the surface of the second semiconductor layer 103 facing the peripheral side of the light-emitting unit 10 after being formed in the accommodation portion 16, so as not to hinder the connection between the second electrode 12 and the second semiconductor layer 103.

[0127] In the above embodiment, S215 is also included: flattening the surface of the barrier layer 14 facing away from the base substrate 3 and the surface of the second electrode 12 facing away from the base substrate 3, so that the roughness of the surface of the barrier layer 14 and the second electrode 12 facing away from the base substrate 3 is less than 3nm; thereby improving the stability of the connection between adjacent light-emitting units 10, reducing the probability of connection failure caused by the appearance of voids on the contact surfaces of adjacent light-emitting units 10, thereby helping to improve the stability of the light-emitting chip 1.

[0128] Alternatively, step S200 includes:

[0129] S221 , forming a receiving portion 16 on the light emitting unit 10 , the receiving portion 16 penetrating a portion of the second semiconductor layer 103 and penetrating the first semiconductor layer 101 and the light emitting functional layer 102 , wherein the light emitting unit 10 includes a first insulating region disposed adjacent to the receiving portion 16 .

[0130] S222, performing insulation treatment on the first insulation region, including implementing insulation of the first insulation region through an ion implantation process.

[0131] S223 , removing the portion of the second semiconductor layer 103 exposed by the receiving portion 16 .

[0132] S224 , forming a second electrode 12 on a side of the second portion 142 away from the light emitting unit 10 and on a surface of the second semiconductor layer 103 facing the peripheral side of the light emitting unit 10 .

[0133] The ions in the ion implantation process may include arsenic, which is not particularly limited in this application.

[0134] In the above embodiment, the light emitting unit 10 further includes a first insulating region, which can be formed by ion implantation to achieve insulation between the second electrode 12 and the light emitting functional layer 102 and the first semiconductor layer 101 .

[0135] The preparation method provided in this application also includes:

[0136] S400, such as Fig. 22 As shown, opening portions 15 corresponding to the light emitting units 10 are formed, and the opening portions 15 are used to expose the first semiconductor layer 101 of the light emitting unit 10 .

[0137] S500, such as Fig. 22 As shown, a first electrode 11 is formed in the opening 15 , and the first electrode 11 is insulated from the light-emitting functional layer 102 and the second semiconductor layer 103 .

[0138] In the above embodiment, the barrier layer 14 further includes a third portion 143 located in the opening 15 to achieve insulation between the first electrode 11 and the light-emitting functional layer 102 and the second semiconductor layer 103. Alternatively, the light-emitting unit 10 includes a second insulating region disposed around the opening 15, and the second insulating region is insulated, including being insulated by an ion implantation process to achieve insulation between the first electrode 11 and the light-emitting functional layer 102 and the second semiconductor layer 103.

[0139] When a plurality of light-emitting units 10 are formed by one step S100, the display panel 2 can be directly prepared by the above chip preparation method. Fig.23 As shown, the display panel 2 may include a plurality of light-emitting chips 1. The plurality of light-emitting units 10 may be separated by the receiving portion 16 in step S200. Each light-emitting chip 1 may include light-emitting units 10 of three colors, so in step S100, light-emitting units 10 of three colors may be formed on three base substrates 3, respectively. The second electrode 12 is formed by step S200, and then, by step S300, different light-emitting units 10 are stacked along the first direction x to form a plurality of light-emitting chips 1, and a plurality of second electrodes 12 in each light-emitting chip 1 are bonded and connected. The plurality of light-emitting chips 1 are separated by the receiving portion 16, and the receiving portion 16 is arranged around the light-emitting chip 1, and the second electrode 12 may be formed in the receiving portion 16. Adjacent light-emitting chips 1 are connected via the second electrode 12, so that the second electrode 12 can be shared, so that the two second electrodes 12 in the original two light-emitting chips 1 are merged into one, saving the width occupied by one second electrode 12, thereby improving the aperture ratio, and the second electrode 12 can be reused as a shading structure to improve the problem of crosstalk between adjacent light-emitting chips 1, so that the shading structure can be omitted to further improve the aperture ratio.

[0140] The manufacturing method of the display panel 2 is similar to the manufacturing method of the light emitting chip 1, and will not be described in detail in this application. Compared with the manufacturing method of the light emitting chip 1, the manufacturing method of the display panel 2 adds: providing a driving substrate 21, and electrically connecting the first electrode 11 and the second electrode 12 to the driving substrate 21. In this way, the driving substrate 21 is electrically connected to the light emitting chip 1.

[0141] The present application also provides a display device 5, such as Fig.24 As shown, it includes any display panel 2 provided in the present application, or includes any light-emitting chip 1 provided in the present application.

[0142] Since the display device 5 provided in the present application includes any one of the display panels 2 or light-emitting chips 1 provided in the above embodiments, the display device 5 provided in the present application has the beneficial effects of any one of the display panels 2 or light-emitting chips 1 provided in the above embodiments, which will not be repeated here.

[0143] The display device 5 in the embodiment of the present application includes but is not limited to mobile phones, personal digital assistants (PDA), tablet computers, e-books, televisions, access control systems, smart landline phones, consoles and other devices with display functions.

[0144] According to the embodiments of the present application as above, these embodiments do not describe all the details in detail, nor do they limit the invention to specific embodiments. Obviously, many modifications and changes can be made based on the above description. This specification selects and specifically describes these embodiments in order to better explain the principles and practical applications of the present application, so that those skilled in the art can make good use of the present application and the modifications based on the present application. The present application is limited only by the claims and their full scope and equivalents.

Claims

1. A light-emitting chip, characterized in that: include: At least two light-emitting units, the light-emitting units are stacked along a first direction, and each of the light-emitting units comprises a first semiconductor layer, a light-emitting functional layer, and a second semiconductor layer which are sequentially stacked along the first direction; A first electrode is disposed corresponding to each of the light-emitting units and connected to the first semiconductor layer of each of the light-emitting units; A second electrode is disposed around at least a portion of the circumference of the light-emitting unit, and the second electrode is connected to the second semiconductor layer of the light-emitting unit; The second electrodes are stacked along the first direction, and the second electrodes adjacent to each other along the first direction are bonded and connected.

2. The light-emitting chip according to claim 1, characterized in that: The second electrode is disposed around a portion of the circumference of the light-emitting unit. The light-emitting chip further includes a shielding portion. The shielding portion and a projection of the second electrode in the first direction jointly surround a projection of the light-emitting unit in the first direction.

3. The light-emitting chip according to claim 1, characterized in that: It also includes an opening portion, which corresponds to the first semiconductor layer one by one and exposes the first semiconductor layer, and the first electrode is located in the opening portion and connected to the first semiconductor layer.

4. The light-emitting chip according to claim 3, characterized in that: The light emitting chip comprises a first side and a second side arranged along the first direction, the opening portion comprises a first end and a second end, the first end is located on the first side, and the second end is in contact with the first semiconductor layer; Preferably, the outer diameter of the opening portion gradually decreases from the first end to the second end.

5. The light emitting chip according to claim 1, characterized in that: It also includes a receiving portion and a barrier layer, the receiving portion penetrates part of the light emitting unit along the first direction, the barrier layer includes a first portion and a second portion, the first portion is stacked with the light emitting unit along the first direction, the second portion is located in the receiving portion, the second portion covers the surface of the first semiconductor layer facing the receiving portion and the surface of the light emitting functional layer facing the receiving portion, and exposes at least part of the surface of the second semiconductor layer facing the peripheral side of the light emitting unit, the second electrode is located on a side of the second portion away from the light emitting unit, and is electrically connected to at least part of the surface of the second semiconductor layer facing the peripheral side of the light emitting unit; Preferably, the second electrode comprises a first end portion located on a side close to the second semiconductor layer and a second end portion located on a side close to the first semiconductor layer, the outer diameter of the second end portion is larger than the outer diameter of the first end portion, and the first end portions or the second end portions of adjacent second electrodes are arranged adjacent to each other, or the first end portion of one second electrode is arranged adjacent to the second end portion of another second electrode; Preferably, the first part and the second part are arranged continuously.

6. The light emitting chip according to claim 1, characterized in that: The light-emitting chip includes light-emitting units of at least three colors; Preferably, the light-emitting units of three colors include a red light-emitting unit, a green light-emitting unit and a blue light-emitting unit, and the green light-emitting unit is located between the red light-emitting unit and the blue light-emitting unit.

7. A display panel, characterized in that: A light-emitting chip comprising the light-emitting chip according to any one of claims 1 to 6; Preferably, it further comprises a driving substrate, a plurality of the light-emitting chips are formed on one side of the driving substrate, the plurality of the light-emitting chips are arranged along a second direction, the second direction is parallel to the plane where the driving substrate is located, and the light-emitting chips adjacent to each other along the second direction are connected via second electrodes in the light-emitting chips; Preferably, the second electrodes of the light-emitting chips adjacent to each other along the second direction have an integrated structure.

8. A method for preparing a light-emitting chip, characterized in that: include: A first semiconductor layer, a light-emitting functional layer, and a second semiconductor layer are stacked along a first direction on a base substrate to form a light-emitting unit; A receiving portion penetrating a portion of the light-emitting unit is formed in at least a portion of the circumference of the light-emitting unit, the receiving portion is arranged around at least a portion of the circumference of the light-emitting unit, and a second electrode is formed on a side of the receiving portion away from the light-emitting unit, the second electrode is insulated from the first semiconductor layer and the light-emitting functional layer, and the second electrode is connected to the second semiconductor layer to form a preformed structure; At least two of the preformed structures are stacked along the first direction, so that the light-emitting units are stacked along the first direction, and the second electrodes are stacked along the first direction, and the second electrodes adjacent to each other along the first direction are bonded and connected.

9. The preparation method according to claim 8, characterized in that: The second semiconductor layer, the light-emitting functional layer and the first semiconductor layer are stacked in sequence in a direction away from the base substrate; The step of stacking at least two of the preformed structures along the first direction so that the light-emitting units are stacked along the first direction, and the second electrodes are stacked along the first direction, and bonding the second electrodes adjacent to each other along the first direction comprises: Disposing a temporary substrate on a side of a preset preformed structure away from the base substrate, transferring the preset preformed structure from the base substrate to the temporary substrate, and making the second semiconductor layer in the preset preformed structure located on a side of the first semiconductor layer away from the temporary substrate; Disposing the preset preformed structure on a side of another preformed structure away from the substrate; removing the temporary substrate on one side of the preformed structure; or, Arrange the two preformed structures opposite to each other on one side of the substrate; removing the substrate substrate on a side of one of the preformed structures facing away from another preformed structure; Preferably, a receiving portion penetrating a portion of the light-emitting unit is formed in at least a portion of the circumference of the light-emitting unit, the receiving portion is arranged around at least a portion of the circumference of the light-emitting unit, and a second electrode is formed on a side of the receiving portion away from the light-emitting unit, the second electrode is insulated from the first semiconductor layer and the light-emitting functional layer, and the second electrode is connected to the second semiconductor layer, so as to form a preformed structure. The steps include: Forming the accommodation portion on the light-emitting unit, which penetrates a portion of the second semiconductor layer and penetrates the first semiconductor layer and the light-emitting functional layer; A barrier layer is formed on a side of the light emitting unit away from the base substrate, the barrier layer comprising a first portion and a second portion, the first portion is in contact with a surface of the light emitting unit away from the base substrate, and the second portion is located on a side of the light emitting unit facing the receiving portion and covers a surface of the first semiconductor layer facing the receiving portion and a surface of the light emitting functional layer facing the receiving portion; removing a portion of the second semiconductor layer exposed by the receiving portion; forming the second electrode on a side of the second portion away from the light emitting unit and on a surface of the second semiconductor layer facing the peripheral side of the light emitting unit; Preferably, the method further comprises planarizing a surface of the barrier layer on one side away from the base substrate and a surface of the second electrode on one side away from the base substrate, so that the roughness of the surface of the barrier layer and the second electrode on one side away from the base substrate is less than 3 nm; or, The receiving portion is formed on the light emitting unit and penetrates a portion of the second semiconductor layer and the first semiconductor layer and the light emitting functional layer, wherein the light emitting unit comprises a first insulating region disposed adjacent to the receiving portion; Performing insulation treatment on the first insulating region, including implementing insulation of the first insulating region through an ion implantation process; removing a portion of the second semiconductor layer exposed by the receiving portion; forming the second electrode on a side of the second portion away from the light emitting unit and on a surface of the second semiconductor layer facing the peripheral side of the light emitting unit; Preferably, it also includes: forming openings corresponding to the light-emitting units one by one, the openings being used to expose the first semiconductor layer of the light-emitting units; A first electrode is formed in the opening, and the first electrode is insulated from the light-emitting functional layer and the second semiconductor layer.

10. A display device, characterized in that: The device comprises a light emitting chip as described in any one of claims 1 to 6, or comprises a display panel as described in claim 7.

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