Silicon-based OLED strong microcavity anode framework and preparation method thereof

Abstract

The invention provides a silicon-based OLED strong microcavity anode framework and a preparation method thereof, and belongs to the technical field of semiconductors. According to the silicon-based OLED strong microcavity anode frame, the titanium nitride and the indium tin oxide are sequentially coated on the side wall of the anode layer, so that the corrosion of an anode material is avoided, and the corrosion to anode layer metal possibly caused by a subsequent process can be obviously reduced; and the selection freedom degree of the subsequent micro-cavity thickness is higher. The same number of channels is used, the CMP process is avoided, and the process cost is greatly reduced; the back etching process is carried out after the ITO process, so that the loss of SiO of a pixel space caused by various manufacture procedures is reduced to the greatest extent, the pixel space discontinuity is improved, and the anode flatness is improved, thereby reducing the distortion of an EL device during evaporation, reducing the leakage path of the device, remarkably improving the power consumption of the product and improving the stability of the product; the over-etching loss of the back-etching process is small, and electric leakage caused by distortion can be improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a silicon-based OLED strong microcavity anode architecture and a preparation method thereof. Background Art

[0002] In silicon-based micro-display products, due to the difference in wavelengths of the R / G / B colors, the optimal microcavity thickness between the anode and cathode is different. In order to achieve the best light effect of each color, it is necessary to design an anode structure with different gaps between the R / G / B anode and cathode, that is, a strong microcavity structure. The common strong microcavity structure has the problem of easy corrosion of the anode material between the pixel spaces. Summary of the invention

[0003] In view of this, the object of the present invention is to provide a silicon-based OLED strong microcavity anode and a preparation method thereof. The silicon-based OLED strong microcavity anode frame of the present invention uses the titanium nitride and indium tin oxide layer 4 of the through hole 8 to cover the side wall of the anode layer 2, thereby avoiding corrosion of the anode material.

[0004] In order to achieve the above-mentioned object of the invention, the present invention provides the following technical solutions:

[0005] The present invention provides a silicon-based OLED strong microcavity anode architecture, comprising:

[0006] The invention comprises a wafer 1 and N pixel regions located on the surface of the wafer 1, wherein N≥1, the pixel regions are arranged at multiple intervals, each pixel region comprises a first sub-pixel region, a second sub-pixel region and a third sub-pixel region arranged at intervals, each pixel region comprises an anode layer 2, a transparent inorganic layer 3, an indium tin oxide layer 4, a second silicon oxide layer 5, a silicon nitride layer 6 and a third silicon oxide layer 7 arranged in a stacked manner,

[0007] The transparent inorganic layer 3 has a through hole 8 therein; the sidewalls of the transparent inorganic layer 3 are sequentially coated with titanium nitride and indium tin oxide;

[0008] The side walls of the anode layer 2 are coated with titanium nitride and indium tin oxide in sequence;

[0009] The anode layer 2 is disposed on the upper surface of the wafer 1;

[0010] The pixel area has a pixel opening.

[0011] Preferably, the first sub-pixel area, the second sub-pixel area and the third sub-pixel area are divided by a pixel space, and from bottom to top, the pixel space includes an inorganic medium layer 9, a pixel space silicon nitride layer 10 and a pixel space silicon oxide layer 11 which are stacked in sequence, the pixel space silicon nitride layer 10 has the same thickness as the silicon nitride layer 6, and the pixel space silicon oxide layer 11 has the same thickness as the third silicon oxide layer 7.

[0012] Preferably,

[0013] Preferably, the inner distance between two adjacent indium tin oxide layers 4 at the bottom of the pixel space is d4, the distance between two adjacent anode layers 2 at the bottom of the pixel space is d3, and d3-d4≥0.1 μm.

[0014] Preferably, the transparent inorganic layer 3 is made of silicon oxide or silicon nitride.

[0015] Preferably, the thicknesses of the transparent inorganic layer 3 in the first sub-pixel region, the second sub-pixel region and the third sub-pixel region are all different.

[0016] The present invention also provides a method for preparing the silicon-based OLED strong microcavity anode architecture described in the above technical solution, characterized in that it comprises the following steps:

[0017] Deposition is performed on the surface of the wafer 1 to obtain an anode layer material and a transparent inorganic layer material in sequence, and then a first photoresist coating and a first exposure and development are performed, and then a first channel etching is performed to retain the transparent inorganic layer material on the third sub-pixel area, and the first channel etching uses the anode layer material as an etching stop layer to obtain a first anode structure;

[0018] Depositing on the surface of the first anode structure to obtain a transparent inorganic layer material, then performing a second photoresist coating and a second exposure and development, and then performing a second channel etching to retain the transparent inorganic layer material on the second sub-pixel region and the third sub-pixel region, the second channel etching uses the anode layer material as an etching stop layer to obtain a second anode structure;

[0019] Depositing on the surface of the second anode structure to obtain a transparent inorganic layer material, then performing a third photoresist coating and a third exposure and development, and then performing a third channel etching to retain the transparent inorganic layer material on the first sub-pixel area, the second sub-pixel area and the third sub-pixel area, the third channel etching uses the anode layer material as an etching stop layer to obtain a third anode structure;

[0020] Performing a fourth photoresist coating and a fourth exposure and development on the surface of the third anode structure, and then performing a fourth channel etching, retaining the transparent inorganic layer material on the first sub-pixel region, the second sub-pixel region, the third sub-pixel region and the space between the pixel regions, the fourth channel etching uses the anode layer material and the wafer 1 as an etching stop layer to obtain a fourth anode structure;

[0021] Deposition is performed on the surface of the fourth anode structure to obtain a titanium nitride layer material, and then a fourth photoresist coating and a fourth exposure and development are performed, and then a fifth channel etching is performed to retain the titanium nitride layer material in the space between the through hole 8 and the pixel area, and the fifth channel etching uses the transparent inorganic layer material and the wafer 1 as an etching stop layer to obtain a fifth anode structure;

[0022] Deposition is performed on the surface of the fifth anode structure to obtain an indium tin oxide layer material, and then a fifth photoresist coating and a fifth exposure and development are performed, and then a sixth trench etching is performed to retain the indium tin oxide layer material on the first sub-pixel region, the second sub-pixel region and the third sub-pixel region, and the sixth trench etching uses the wafer 1 as an etching stop layer to obtain a sixth anode structure;

[0023] Deposition is performed on the surface of the sixth anode structure to obtain a transparent inorganic layer material and an inorganic dielectric material for the spacing space of the pixel region, and then a sixth photoresist coating and a sixth exposure and development are performed, and then a seventh channel etching is performed, wherein the seventh channel etching uses an indium tin oxide layer material and an inorganic dielectric material as an etching stop layer to obtain a seventh anode structure;

[0024] Deposition is performed on the surface of the seventh anode architecture to obtain silicon oxide layer material, silicon nitride layer material and silicon oxide layer material in sequence, and then a seventh photoresist coating and a seventh exposure and development are performed, and then an eighth channel etching is performed to retain the material of the second silicon oxide layer 5, the material of the silicon nitride layer 6 and the material of the third silicon oxide layer 7 on the pixel area. The eighth channel etching uses the indium tin oxide layer material as an etching stop layer to form a pixel opening, thereby obtaining the silicon-based OLED strong microcavity anode architecture.

[0025] Preferably,

[0026] Preferably, when the seventh channel is etched,

[0027] Preferably,

[0029] Compared with the prior art, the present invention has the following beneficial effects:

[0030] The silicon-based OLED strong microcavity anode frame of the present invention utilizes the side wall of the anode layer 2 to sequentially coat titanium nitride and indium tin oxide, thereby avoiding corrosion of the anode material and significantly reducing the corrosion of the metal of the anode layer 2 that may be caused by subsequent processes; and has a higher degree of freedom in selecting the thickness of the subsequent microcavity. The specific principle is as follows:

[0031] Figure 2 This is a schematic diagram of the structure of the strong micro-cavity anode architecture of silicon-based OLED in related technology. Figure 2The silicon-based OLED strong microcavity anode architecture has an internal undercut with footing structure. Due to the use of chemical mechanical polishing (CMP) process route, the ITO etching has a large over-etching effect on the SiO film layer below. If the SiO is etched away and contacts the anode metal below, there will be a risk of corrosion of the anode metal, and ITO etching will also use Cl 2 , Cl 2 Contact with the anode metal will also cause corrosion of the anode metal. Therefore, the silicon-based OLED strong microcavity anode architecture of the related technology needs to limit the anode space CD d1 to be at least 0.1μm greater than the ITO space CD d2, or the thickness of SiO1 at the thinnest point needs to be controlled. (See Figure 3 ).

[0032] The present invention uses the side wall of the TiN-ITO coating layer 2 to avoid the problem of anode metal corrosion caused by over-engraving ITO in the common strong microcavity anode structure, and there is no need to limit the thickness of the SiO1 at the thinnest point thk2 (see Figure 4 ), the choice of microcavity length is more free.

[0033] The present invention can improve the anode and pixel space step difference by at least This can then reduce the distortion of the device's climbing and reduce leakage. The specific principle is described in detail in the embodiment section.

[0034] Furthermore, the common strong microcavity structure adopts CMP to grind the anode metal. The present invention utilizes the sixth channel etching (metal channel etching) in combination with the seventh channel etching (etching back process) to improve the flatness of the anode layer 2, thereby reducing the distortion of the EL device during evaporation and reducing the leakage path of the device, which can significantly improve the power consumption of the product and enhance the product stability, so that the length of the upper surface of the anode layer 2 is greater than the length of the surface.

[0035] The present invention also provides a method for preparing the silicon-based OLED strong microcavity anode architecture described in the above technical solution, which has the advantages of:

[0036] 1. The present invention uses the same number of passes, avoids the CMP process, and greatly reduces the process cost;

[0037] 2. The present invention moves the back etching process to the ITO process (including the process of depositing ITO and etching away the ITO between pixel spaces), thereby minimizing the loss of transparent inorganic layer materials between pixel spaces caused by various processes, improving the pixel space discontinuity difference, and improving the anode flatness, thereby reducing the distortion of the EL device during evaporation, reducing the leakage path of the device, and significantly improving product power consumption and product stability.

[0038] 3. The over-etching loss of the back-etching process of the present invention is small (maximum ), if the thinnest SiO thickness (thk2) is greater than When back-etching, the via hole above the pixel can also be partially filled, thereby further reducing the high step difference caused by the via hole, especially for the pixel with the highest transparent inorganic layer 3 (such as Figure 5 SiO3 above the G sub-pixel), The existing device is particularly distorted at this location, so the present invention can also improve the leakage caused by the distortion at this location. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] Figure 1 Schematic diagram of the structure of the strong microcavity anode architecture of the silicon-based OLED of the present invention, wherein 1 is a wafer, 2 is an anode layer, 3 is a transparent inorganic layer, 4 is an indium tin oxide layer, 5 is a second silicon oxide layer, 6 is a silicon nitride layer, 7 is a third silicon oxide layer, 8 is a through hole, and 9 is an inorganic dielectric layer;

[0040] Figure 2 It is a schematic diagram of the structure of the strong micro-cavity anode architecture of silicon-based OLED in the related technology;

[0041] Figure 3 For related technologies, SiO over-etching of silicon-based OLED strong micro-cavity anode architecture, Schematic diagram of the structure;

[0042] Figure 4 Schematic diagram of the thickness thk2 of SiO1 in the silicon-based OLED strong microcavity anode architecture of the present invention, the inner spacing d4 of two adjacent indium tin oxide layers 4 at the bottom in the pixel space, and the distance d3 of two adjacent anode layers 2 at the bottom in the pixel space;

[0043] Figure 5 It is a schematic diagram of the structure of the via hole and the difference between the space and the anode ITO surface in the silicon-based OLED strong microcavity anode architecture of the present invention;

[0044] Figure 6 This is a flow chart of steps 1.1 to 1.4 of the comparative example;

[0045] Figure 7 This is a flow chart of steps 1.5 to 1.8 of the comparative example;

[0046] Figure 8 This is a flow chart of steps 1.9 to 1.11 of the comparative example;

[0047] Fig. 9 This is a flow chart of steps 1.12 to 1.14 of the comparative example;

[0048] Fig.10 This is a flow chart of steps 1.15 to 1.17 of the comparative example;

[0049] Fig.11 This is a flow chart of steps 1.1 to 1.6 of the embodiment;

[0050] Fig.12 This is a flow chart of steps 1.7 to 1.12 of the embodiment;

[0051] Fig.13 This is a flow chart of steps 1.13 to 1.15 of the embodiment;

[0052] Fig.14 This is a flow chart of steps 1.16 to 1.18 of the embodiment;

[0053] Fig.15 Schematic diagram of the anode space difference H1 of the strong microcavity anode architecture of the comparative silicon-based OLED;

[0054] Fig.16 Schematic diagram of anode space difference H2 of a strong microcavity anode architecture of an example silicon-based OLED;

[0055] In the specification of the present invention and the drawings thereof, SiO represents silicon oxide, SiN represents silicon nitride, ITO represents indium tin oxide, Wafer represents wafer, Anode represents anode, PR represents photoresist, OX represents oxide, G represents G sub-pixel region, B represents B sub-pixel region, R represents R sub-pixel region, SiO1 represents the transparent inorganic layer 3 of the B sub-pixel region, SiO2 represents the transparent inorganic layer 3 of the R sub-pixel region, SiO3 represents the transparent inorganic layer 3 of the G sub-pixel region, and via represents a through hole. DETAILED DESCRIPTION

[0056] The present invention provides a silicon-based OLED strong microcavity anode architecture, comprising:

[0057] The invention comprises a wafer 1 and N pixel regions located on the surface of the wafer 1, wherein N≥1, the pixel regions are arranged at multiple intervals, each pixel region comprises a first sub-pixel region, a second sub-pixel region and a third sub-pixel region arranged at intervals, each pixel region comprises an anode layer 2, a transparent inorganic layer 3, an indium tin oxide layer 4, a second silicon oxide layer 5, a silicon nitride layer 6 and a third silicon oxide layer 7 arranged in a stacked manner,

[0058] The transparent inorganic layer 3 has a through hole 8 therein; the sidewalls of the transparent inorganic layer 3 are sequentially coated with titanium nitride and indium tin oxide;

[0059] The side walls of the anode layer 2 are coated with titanium nitride and indium tin oxide in sequence;

[0060] The anode layer 2 is disposed on the upper surface of the wafer 1;

[0061] The pixel area has a pixel opening.

[0062] The present invention has no particular limitation on the specific materials of the wafer 1 , the anode layer 2 , the transparent inorganic layer 3 , the second silicon oxide layer 5 , the silicon nitride layer 6 and the third silicon oxide layer 7 , and any materials known to those skilled in the art may be used.

[0063] In the present invention, the material of the anode layer 2 is preferably aluminum.

[0064] In the present invention, the material of the wafer 1 is preferably silicon oxide.

[0065] Figure 1 The schematic diagram of the structure of the silicon-based OLED strong microcavity anode architecture of the present invention is shown in FIG. 1, wherein 1 is a wafer, 2 is an anode layer, 3 is a transparent inorganic layer, 4 is an indium tin oxide layer, 5 is a second silicon oxide layer, 6 is a silicon nitride layer, 7 is a third silicon oxide layer, 8 is a through hole, and 9 is an inorganic dielectric layer. Figure 1 The structure of the silicon-based OLED strong microcavity anode architecture of the present invention is described.

[0066] The silicon-based OLED strong microcavity anode architecture of the present invention includes a wafer 1 and N pixel areas located on the surface of the wafer 1, wherein N≥1, the pixel areas are arranged at multiple time intervals, each pixel area includes a first sub-pixel area (B sub-pixel area), a second sub-pixel area (R sub-pixel area) and a third sub-pixel area (G sub-pixel area) arranged at intervals, and each pixel area includes an anode layer 2, a transparent inorganic layer 3, an indium tin oxide layer 4, a second silicon oxide layer 5, a silicon nitride layer 6 and a third silicon oxide layer 7 arranged in a stacked manner.

[0067] In the present invention, the first sub-pixel area, the second sub-pixel area and the third sub-pixel area are divided and spaced by a pixel space. From bottom to top, the pixel space includes an inorganic medium layer 9, a pixel space silicon nitride layer 10 and a pixel space silicon oxide layer 11 which are stacked in sequence. The pixel space silicon nitride layer 10 has the same thickness as the silicon nitride layer 6, and the pixel space silicon oxide layer 11 has the same thickness as the third silicon oxide layer 7.

[0068] In the present invention, the material of the inorganic dielectric layer 9 is preferably silicon oxide or silicon nitride, and the inorganic dielectric layer 9 is used to fill the pixel space discontinuity.

[0069] In the present invention, More preferably The present invention defines the maximum surface difference between the inorganic dielectric layer 9 and the indium tin oxide layer 4 to be If the thinnest SiO thickness (thk2) is greater than When back-etching, the via hole above the pixel can also be partially filled, thereby further reducing the high step difference caused by the via hole, especially for the pixel with the highest SiO (such as Figure 5SiO3 above the G sub-pixel), The device is particularly distorted at this location, so the present invention can also improve the leakage caused by the distortion at this location.

[0070] In the present invention, the inner spacing between the two adjacent indium tin oxide layers 4 at the bottom in the pixel space is d4, the distance between the two adjacent anode layers 2 at the bottom in the pixel space is d3, and the d3-d4 is preferably ≥0.1μm. The d3-d4 is preferably ≥0.1μm to better meet the Overlay accuracy of the exposure machine. Figure 4 It is a schematic diagram of the thickness thk2 of SiO1 in the silicon-based OLED strong microcavity anode architecture of the present invention, the inner spacing d4 of two adjacent indium tin oxide layers 4 at the bottom in the pixel space, and the distance d3 of two adjacent anode layers 2 at the bottom in the pixel space.

[0071] In the present invention, the material of the transparent inorganic layer 3 is preferably silicon oxide (SiO) or silicon nitride (SiN).

[0072] In the present invention, the thicknesses of the transparent inorganic layer 3 in the first sub-pixel region, the second sub-pixel region and the third sub-pixel region are all different.

[0073] The present invention also provides a method for preparing the silicon-based OLED strong microcavity anode architecture described in the above technical solution, comprising the following steps:

[0074] Deposition is performed on the surface of the wafer 1 to obtain an anode layer material and a transparent inorganic layer material in sequence, and then a first photoresist coating and a first exposure and development are performed, and then a first channel etching is performed to retain the transparent inorganic layer material on the third sub-pixel area, and the first channel etching uses the anode layer material as an etching stop layer (ESL) to obtain a first anode structure;

[0075] Depositing on the surface of the first anode structure to obtain a transparent inorganic layer material, then performing a second photoresist coating and a second exposure and development, and then performing a second channel etching to retain the transparent inorganic layer material on the second sub-pixel region and the third sub-pixel region, the second channel etching uses the anode layer material as an etching stop layer to obtain a second anode structure;

[0076] Depositing on the surface of the second anode structure to obtain a transparent inorganic layer material, then performing a third photoresist coating and a third exposure and development, and then performing a third channel etching to retain the transparent inorganic layer material on the first sub-pixel area, the second sub-pixel area and the third sub-pixel area, the third channel etching uses the anode layer material as an etching stop layer to obtain a third anode structure;

[0077] Performing a fourth photoresist coating and a fourth exposure and development on the surface of the third anode structure, and then performing a fourth channel etching, retaining the transparent inorganic layer material on the first sub-pixel region, the second sub-pixel region, the third sub-pixel region and the space between the pixel regions, the fourth channel etching uses the anode layer material and the wafer 1 as an etching stop layer to obtain a fourth anode structure;

[0078] Deposition is performed on the surface of the fourth anode structure to obtain a titanium nitride layer material, and then a fourth photoresist coating and a fourth exposure and development are performed, and then a fifth channel etching is performed to retain the titanium nitride layer material in the space between the through hole 8 and the pixel area, and the fifth channel etching uses the transparent inorganic layer material and the wafer 1 as an etching stop layer to obtain a fifth anode structure;

[0079] Deposition is performed on the surface of the fifth anode structure to obtain an indium tin oxide layer material, and then a fifth photoresist coating and a fifth exposure and development are performed, and then a sixth trench etching is performed to retain the indium tin oxide layer material on the first sub-pixel region, the second sub-pixel region and the third sub-pixel region, and the sixth trench etching uses the wafer 1 as an etching stop layer to obtain a sixth anode structure;

[0080] Deposition is performed on the surface of the sixth anode structure to obtain a transparent inorganic layer material and an inorganic dielectric material for the spacing space of the pixel region, and then a sixth photoresist coating and a sixth exposure and development are performed, and then a seventh channel etching is performed, wherein the seventh channel etching uses an indium tin oxide layer material and an inorganic dielectric material as an etching stop layer to obtain a seventh anode structure;

[0081] Deposition is performed on the surface of the seventh anode architecture to obtain silicon oxide layer material, silicon nitride layer material and silicon oxide layer material in sequence, and then a seventh photoresist coating and a seventh exposure and development are performed, and then an eighth channel etching is performed to retain the material of the second silicon oxide layer 5, the material of the silicon nitride layer 6 and the material of the third silicon oxide layer 7 on the pixel area. The eighth channel etching uses the indium tin oxide layer material as an etching stop layer to form a pixel opening, thereby obtaining the silicon-based OLED strong microcavity anode architecture.

[0082] In the present invention,

[0083] In the present invention, when the seventh channel is etched,

[0085] In the present invention,

[0087] Figures 11 to 14 The preparation flow chart of the silicon-based OLED strong microcavity anode architecture of the present invention is shown in the embodiment. Figures 11 to 14 The preparation method of the present invention is described. Figures 4-5 And the transparent inorganic layer 3 in 11 to 14 is SiO as an example.

[0088] The present invention has no particular limitation on the specific methods of deposition, photoresist coating, exposure and development, and channel etching (Etch), and methods well known to those skilled in the art may be used, such as electron beam deposition.

[0089] The technical solutions in the present invention will be described clearly and completely below in conjunction with the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0090] Comparative Example

[0091] Figure 2 Related technology of the structure shown in the figure: the preparation process of the silicon-based OLED strong microcavity anode architecture, Figures 6 to 10 The preparation flow chart of the strong microcavity anode architecture of silicon-based OLED is shown in the figure. Figure 6 This is the flowchart of steps 1.1 to 1.4. Figure 7 This is the flow chart of steps 1.5 to 1.8. Figure 8 This is a flowchart of steps 1.9 to 1.11. Fig. 9 This is the flowchart of steps 1.12 to 1.14. Fig.10 This is a flow chart of steps 1.15 to 1.17, which specifically includes the following steps:

[0092] 1.1 Silicon nitride material and silicon oxide material are deposited on the surface of the wafer in sequence, and then photoresist is coated;

[0093] 1.2 Perform trench etching of zirconium oxide material and silicon nitride material, using the wafer as an etching stop layer;

[0094] 1.3 Ti or Ta is deposited first, then the Al layer is deposited, and then silicon oxide material is deposited using TEOS;

[0095] 1.4 Perform oxide CMP and stop at the surface of the Al layer.

[0096] 1.5 Deposit silicon oxide material, and then apply photoresist on the G sub-pixel area;

[0097] 1.6 Perform channel etching of silicon oxide material, and use the Al layer as an etching stop layer.

[0098] 1.7 Deposit silicon oxide material, and then apply photoresist on the G sub-pixel region and the R sub-pixel region;

[0099] 1.8 Perform channel etching of silicon oxide material, and use the Al layer as an etching stop layer.

[0100] 1.9 Deposit silicon oxide material, and then apply photoresist on non-via areas;

[0101] 1.10via channel etching,

[0102] 1.11 Deposit titanium nitride material and then apply photoresist on the via part;

[0103] 1.12 Perform trench etching of titanium nitride material.

[0104] 1.13 Deposit ITO material, and then coat photoresist on the surface of the ITO material;

[0105] 1.14 Perform channel etching of ITO material.

[0106] 1.15 sequentially depositing silicon oxide material, silicon nitride material and silicon oxide material;

[0107] 1.16 Coating photoresist on the surface of the silicon oxide material;

[0108] 1.17 Perform channel etching to form an inner undercut with footing structure.

[0109] Example

[0110] Figure 1 Related technology of the structure shown in the figure: the preparation process of the silicon-based OLED strong microcavity anode architecture, Fig.11 This is a flow chart of steps 1.1 to 1.6 of the embodiment, Fig.12 This is a flow chart of steps 1.7 to 1.12 of the embodiment, Fig.13 This is a flow chart of steps 1.13 to 1.15 of the embodiment, Fig.14 This is a flow chart of steps 1.16 to 1.18 of the embodiment, which specifically includes the following steps:

[0111] 1.1 Deposition is performed on the surface of wafer 1 to obtain an anode layer material and a transparent inorganic layer material (SiO) in sequence, and then a first photoresist coating and a first exposure and development are performed;

[0112] 1.2 Performing a first channel etching to retain the transparent inorganic layer material on the third sub-pixel region, the first channel etching uses the Al layer material as an etching stop layer, obtaining a first anode structure;

[0113] 1.3 Deposition is performed on the surface of the first anode structure to obtain a transparent inorganic layer material, and then a second photoresist coating and a second exposure and development are performed;

[0114] 1.4 Perform a second channel etching to retain the transparent inorganic layer material on the second sub-pixel region and the third sub-pixel region. The second channel etching uses the Al layer material as an etching stop layer. obtaining a second anode structure;

[0115] 1.5 Depositing on the surface of the second anode structure to obtain a transparent inorganic layer material;

[0116] 1.6 Performing a third photoresist coating and a third exposure and development;

[0117] 1.7 Perform a third channel etching to retain the transparent inorganic layer material on the first sub-pixel region, the second sub-pixel region and the third sub-pixel region, and use the Al layer material as an etching stop layer in the third channel etching to obtain a third anode structure;

[0118] 1.8 performing a fourth photoresist coating and a fourth exposure and development on the surface of the third anode structure;

[0119] 1.9 Perform a fourth channel etching to retain the transparent inorganic layer material on the first sub-pixel region, the second sub-pixel region, the third sub-pixel region and the space between the pixel regions. The fourth channel etching uses the Al layer material and the wafer 1 as an etching stop layer to obtain a fourth anode structure;

[0120] 1.10 Deposition is performed on the surface of the fourth anode structure to obtain a titanium nitride layer material, and then a fourth photoresist coating and a fourth exposure and development are performed, and the titanium nitride layer material covers the Via and the pixel space;

[0121] 1.11 Perform the fifth channel etching, retain the titanium nitride layer material in the space between the through hole 8 and the pixel area, and the fifth channel etching uses the transparent inorganic layer material and the wafer 1 as the etching stop layer. A fifth anode structure is obtained;

[0122] 1.12 Depositing on the surface of the fifth anode structure to obtain an indium tin oxide layer material, and then performing a fifth photoresist coating and a fifth exposure and development, wherein the fifth photoresist coating and the fifth exposure and development expose the indium tin oxide layer material in the pixel space area;

[0123] 1.13 Perform the sixth trench etching to retain the indium tin oxide layer material on the first sub-pixel region, the second sub-pixel region and the third sub-pixel region. The sixth trench etching uses wafer 1 as an etching stop layer to expose the wafer material in the pixel space region to obtain a sixth anode structure.

[0124] 1.14 Deposition is performed on the surface of the sixth anode structure to obtain a transparent inorganic layer material and an inorganic dielectric material for the spacing space of the pixel region, and then a sixth photoresist coating and a sixth exposure and development are performed;

[0125] 1.15 The seventh trench etching is performed. The seventh trench etching uses the indium tin oxide layer material and the inorganic dielectric material as the etching stop layer. Obtain the seventh anode structure;

[0126] 1.16 Deposition is performed on the surface of the seventh anode structure to obtain a silicon oxide layer material, a silicon nitride layer material and a silicon oxide layer material in sequence;

[0127] 1.17 performing the seventh photoresist coating and the seventh exposure and development;

[0128] 1.18 The eighth channel etching is performed to retain the material of the second silicon oxide layer 5, the material of the silicon nitride layer 6 and the material of the third silicon oxide layer 7 on the pixel area. The eighth channel etching uses the indium tin oxide layer material as an etching stop layer to form a pixel opening, thereby obtaining the silicon-based OLED strong microcavity anode architecture with an internal undercut with footing structure.

[0129] Comparative Example: The anode space difference H1 of the strong microcavity anode architecture of silicon-based OLED is as follows Fig.15 As shown,

[0130] Example Example: The anode space difference H2 of the silicon-based OLED strong microcavity anode architecture is as follows Fig.16 As shown, the total height of H2 only needs to consider the back etching over-etching, that is, the back etching over-etching in step 1.16, and the maximum

[0131] Depend on Figures 15-16 It can be seen that the present invention can increase the anode and space gap by at least Reducing the step difference can slow down the distortion of the device climbing here and reduce leakage.

[0132] The above description is only a preferred embodiment of the present invention and does not limit the present invention in any form. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principle of the present invention, and these improvements and modifications should also be regarded as the protection scope of the present invention.

Claims

1. A silicon-based OLED strong microcavity anode architecture, characterized in that: include: The invention comprises a wafer (1) and N pixel regions located on the surface of the wafer (1), wherein N≥1, the pixel regions are arranged at multiple intervals, each pixel region comprises a first sub-pixel region, a second sub-pixel region and a third sub-pixel region arranged at intervals, each pixel region comprises an anode layer (2), a transparent inorganic layer (3), an indium tin oxide layer (4), a second silicon oxide layer (5), a silicon nitride layer (6) and a third silicon oxide layer (7) arranged in a stacked manner, The transparent inorganic layer (3) has a through hole (8) therein; the side wall of the transparent inorganic layer (3) is sequentially coated with titanium nitride and indium tin oxide; The side wall of the anode layer (2) is coated with titanium nitride and indium tin oxide in sequence; The anode layer (2) is arranged on the upper surface of the wafer (1); The pixel area has a pixel opening.

2. The silicon-based OLED strong microcavity anode architecture according to claim 1, characterized in that: The first sub-pixel region, the second sub-pixel region and the third sub-pixel region are divided and spaced by a pixel space, and from bottom to top, the pixel space comprises an inorganic medium layer (9), a pixel space silicon nitride layer (10) and a pixel space silicon oxide layer (11) which are stacked in sequence, the pixel space silicon nitride layer (10) and the silicon nitride layer (6) having the same thickness, and the pixel space silicon oxide layer (11) and the third silicon oxide layer (7) having the same thickness.

3. The silicon-based OLED strong microcavity anode architecture according to claim 2, characterized in that: The surface height difference between the inorganic dielectric layer (9) and the indium tin oxide layer (4) 4. The silicon-based OLED strong microcavity anode architecture according to claim 2, characterized in that: The inner distance between two adjacent indium tin oxide layers (4) at the bottom of the pixel space is d4, the distance between two adjacent anode layers (2) at the bottom of the pixel space is d3, and d3-d4≥0.1 μm.

5. The silicon-based OLED strong microcavity anode architecture according to claim 1, characterized in that: The material of the transparent inorganic layer (3) is silicon oxide or silicon nitride.

6. The silicon-based OLED strong microcavity anode architecture according to claim 1, characterized in that: The thicknesses of the transparent inorganic layer (3) in the first sub-pixel region, the second sub-pixel region and the third sub-pixel region are all different.

7. The method for preparing a silicon-based OLED strong microcavity anode architecture according to any one of claims 1 to 6, characterized in that: The following steps are involved: Deposition is performed on the surface of the wafer (1) to obtain an anode layer material and a transparent inorganic layer material in sequence, and then a first photoresist coating and a first exposure and development are performed, and then a first channel etching is performed to retain the transparent inorganic layer material on the third sub-pixel region, and the first channel etching uses the anode layer material as an etching stop layer to obtain a first anode structure; Depositing on the surface of the first anode structure to obtain a transparent inorganic layer material, then performing a second photoresist coating and a second exposure and development, and then performing a second channel etching to retain the transparent inorganic layer material on the second sub-pixel region and the third sub-pixel region, the second channel etching uses the anode layer material as an etching stop layer to obtain a second anode structure; Depositing on the surface of the second anode structure to obtain a transparent inorganic layer material, then performing a third photoresist coating and a third exposure and development, and then performing a third channel etching to retain the transparent inorganic layer material on the first sub-pixel area, the second sub-pixel area and the third sub-pixel area, the third channel etching uses the anode layer material as an etching stop layer to obtain a third anode structure; Performing a fourth photoresist coating and a fourth exposure and development on the surface of the third anode structure, and then performing a fourth channel etching, retaining the transparent inorganic layer material on the first sub-pixel region, the second sub-pixel region, the third sub-pixel region and the space between the pixel regions, the fourth channel etching using the anode layer material and the wafer (1) as an etching stop layer, to obtain a fourth anode structure; Deposition is performed on the surface of the fourth anode structure to obtain a titanium nitride layer material, and then a fourth photoresist coating and a fourth exposure and development are performed, and then a fifth channel etching is performed to retain the titanium nitride layer material in the space between the through hole (8) and the pixel area, and the fifth channel etching uses the transparent inorganic layer material and the wafer (1) as an etching stop layer to obtain a fifth anode structure; Deposition is performed on the surface of the fifth anode structure to obtain an indium tin oxide layer material, and then a fifth photoresist coating and a fifth exposure and development are performed, and then a sixth trench etching is performed to retain the indium tin oxide layer material on the first sub-pixel region, the second sub-pixel region and the third sub-pixel region, and the sixth trench etching uses the wafer (1) as an etching stop layer to obtain a sixth anode structure; Deposition is performed on the surface of the sixth anode structure to obtain a transparent inorganic layer material and an inorganic dielectric material for the spacing space of the pixel region, and then a sixth photoresist coating and a sixth exposure and development are performed, and then a seventh channel etching is performed, wherein the seventh channel etching uses an indium tin oxide layer material and an inorganic dielectric material as an etching stop layer to obtain a seventh anode structure; Deposition is performed on the surface of the seventh anode structure to obtain silicon oxide layer material, silicon nitride layer material and silicon oxide layer material in sequence, then a seventh photoresist coating and a seventh exposure and development are performed, and then an eighth channel etching is performed to retain the material of the second silicon oxide layer (5), the material of the silicon nitride layer (6) and the material of the third silicon oxide layer (7) on the pixel area, and the eighth channel etching uses the indium tin oxide layer material as an etching stop layer to form a pixel opening, thereby obtaining the silicon-based OLED strong microcavity anode structure.

8. The preparation method according to claim 1, characterized in that: The amount of material loss of the transparent inorganic layer during the fifth channel etching 9. The preparation method according to claim 1, characterized in that: When the seventh trench is etched, the surface height difference between the indium tin oxide layer material and the inorganic dielectric material is 10. The preparation method according to claim 1, characterized in that: The loss amount of the anode layer material during the first channel etching and the second channel etching is independently

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