Gallium nitride HEMT device capable of monitoring temperature distribution in real time and preparation method thereof

Abstract

The invention discloses a gallium nitride HEMT (High Electron Mobility Transistor) device capable of monitoring temperature distribution in real time and a preparation method of the gallium nitride HEMT device. The device comprises a GaN buffer layer, a GaN channel layer, an AlGaN barrier layer, a P-GaN layer, a Ti / Al / Ni / Au ohmic contact layer, a SiNx isolation layer, a field plate, gate metal, a SiO2 passivation layer, a first metal layer, a first PI insulating layer, a first SiNx passivation layer, a second metal layer, a second PI insulating layer, a second SiNx passivation layer, a third metal layer, a patterned PI coating, an array temperature sensor and a PI passivation layer. The array temperature sensor is formed by connecting a TaN resistive film deposited by pulse laser, a carbon structure which is carbonized by direct writing of hundred TW / cm < 2 > magnitude high-intensity laser and takes graphene as a main part, and a copper nanowire electrode sintered by hundred TW / cm < 2 > magnitude high-intensity laser in a bridge manner. According to the gallium nitride HEMT device, the real-time accurate measurement of the heat distribution of the large-size packaged gallium nitride HEMT device can be realized.

Description

Technical Field

[0001] The present invention belongs to the field of integrated power devices, and in particular relates to a gallium nitride HEMT device for real-time monitoring of temperature distribution and a preparation method thereof. Background Art

[0002] As an outstanding representative of the third-generation semiconductor materials, gallium nitride has the advantages of large bandgap width and high breakdown electric field strength. Compared with silicon-based devices, high electron mobility transistors based on gallium nitride materials have the advantages of smaller on-resistance and higher voltage resistance, and are particularly suitable for high-frequency, small-volume, cost-sensitive, and moderate-power application scenarios. In areas of major national demand, it is expected to be widely used in information equipment and aerospace equipment such as high-efficiency power supplies, high-speed motors, and precise ranging.

[0003] However, when GaN power devices are working, a large amount of Joule heat is generated inside the channel, and the concentrated area of ​​power consumption is the heat source area. The heat is mainly generated by the electron-phonon interaction in the two-dimensional electron gas (2DEG) region. The accumulation of this internal heat power consumption causes the junction temperature of the chip to rise, and the device will experience output characteristic attenuation under high source-drain bias voltage. Therefore, how to effectively manage and disperse this heat becomes the key to ensuring the reliability of GaN power devices.

[0004] The optical temperature measurement method can obtain the surface temperature distribution map of the device. However, it must make the light beam contact the surface of the object, which is not suitable for packaged devices. The electrical method has the characteristics of fast and non-destructive testing, which can realize the rapid screening of thermal resistance parameters of device products.

[0005] The invention patent application with publication number CN114720837A discloses a GaN device junction temperature measurement circuit and measurement method. The measurement circuit includes a microprocessor, a power module, a drive module, and a monitoring module. The microprocessor is connected to the drive module and the monitoring module respectively. The drive module and the monitoring module are both connected to the GaN device. The power module is connected to the drive module and the monitoring module respectively, and is used to supply power to the drive module and the monitoring module. The monitoring circuit of the invention patent application has the potential to monitor the junction temperature of the device in real time online while ensuring the normal operation of the device. The monitoring circuit has a high degree of integration, and the monitoring method is easy to implement, which can improve the reliability of GaN power semiconductor devices.

[0006] The invention patent application with the publication number CN111211112A discloses an integrated GaN device real-time temperature measurement system and its preparation method, and the preparation method includes: 1) growing a high-resistance GaN buffer layer on a sapphire substrate; 2) growing a p-type doped InGaN layer on the high-resistance GaN buffer layer; 3) growing an intrinsically doped GaN layer on the p-type InGaN layer; 4) epitaxially growing an intrinsically doped AlGaN layer on the intrinsically doped GaN layer; 5) selectively etching the epitaxial layer material to form an etched table and steps, and depositing an aluminum oxide passivation layer on the table and steps; 6) selectively etching the aluminum oxide passivation layer, and depositing a metal electrode. This invention patent application uses the inserted p-type InGaN layer as a temperature measuring resistor layer, and combines it with a four-probe method for measuring thin film resistance, which can monitor the temperature changes of traditional GaN MOSFET power devices in real time.

[0007] However, the electrical method disclosed in the above patent can only obtain the average temperature of the temperature-sensitive parameter area, but cannot obtain the surface temperature distribution of the device. Summary of the invention

[0008] In view of the above technical problems, the present invention proposes a gallium nitride HEMT device for real-time monitoring of temperature distribution and a preparation method thereof.

[0009] The present invention proposes a gallium nitride HEMT device for real-time monitoring of temperature distribution, which includes, from bottom to top, a substrate layer, a GaN buffer layer, a GaN channel layer, an AlGaN barrier layer, a P-GaN layer, a Ti / Al / Ni / Au ohmic contact layer, a SiNx isolation layer, a field plate, a gate metal, a SiO2 passivation layer, a first metal layer, a first PI insulating layer, a first SiNx passivation layer, a second metal layer, a second PI insulating layer, a second SiNx passivation layer, a third metal layer, a patterned PI coating, an array temperature sensor and a PI passivation layer; The array temperature sensor is composed of a TaN resistance film deposited by a pulsed laser, a hundred TW / cm 2 Graphene-based carbon structures and hundreds of TW / cm 2 The copper nanowire electrodes sintered by high-intensity laser sintering are constructed in a bridge connection manner.

[0010] The present invention utilizes TaN resistance film, graphene film and copper nanowire electrodes in a bridge connection mode to form an array temperature sensor, which can directly sense the temperature change of the device when it is working, reducing the measurement error caused by factors such as packaging materials in traditional methods.

[0011] The present invention uses array temperature sensors to monitor the temperature of multiple points on the device surface in real time, comprehensively reflecting the heat distribution of the device during operation, and improving the accuracy and reliability of temperature measurement. It provides instant and accurate thermal sensing data for thermal management strategies and ensures the stability and reliability of gallium nitride chips.

[0012] In addition, based on 100 TW / cm 2 The high-intensity laser of this magnitude has a higher energy density, and the spot size and spatial position are controllable, which can realize the efficient preparation of samples and the rapid removal of thin film materials, and realize the efficient preparation of array temperature sensors. Compared with the ordinary femtosecond laser or millisecond laser in the prior art, it can realize the preparation of larger-sized temperature sensors required by the present invention, and compared with the photoresist and mask technology in the prior art, it avoids the introduction of excessive impurity elements.

[0013] In one embodiment, the graphene-based carbon structure is used as a thermistor thin film resistor, and the TaN resistor film is used as a thin film resistor with a low temperature coefficient. The graphene-based carbon structure and the TaN resistor film are connected in a bridge connection manner through the copper nanowire electrode to form an array temperature sensor.

[0014] In one embodiment, the TaN resistance film is prepared by the following method, including: Firstly, pulsed laser deposition technology was used to prepare TaN resistor thin film, and then 2 The excess TaN film is removed by a high-intensity laser of the order of 1000 nm to achieve the patterning of thin-film resistors with low temperature coefficients.

[0015] In one embodiment, the passing TW / cm 2 The excess TaN film is removed by a high-intensity laser of magnitude 800 nm. The laser pulse wavelength output by the femtosecond laser amplifier is 800 nm and the pulse width is 30 fs. A plasma channel is formed in the air through a 100 cm plano-convex lens. The film surface is located at the center of the plasma channel through fine-tuning. The single pulse energy is 0.8-1.0 mJ.

[0016] In one embodiment, 100 TW / cm 2 The carbon structure mainly composed of graphene is directly written by a high-intensity laser of magnitude 200,000. The laser pulse wavelength output by the femtosecond laser amplifier is 800nm. After passing through the optical parametric amplifier, the laser wavelength is adjusted to 355nm. A plasma channel is formed in the air through a 20cm plano-convex lens. Through fine-tuning, the surface of the film is located 0.1mm in front of the plasma channel. The single pulse energy is 0.8-1.6mJ, and the direct writing rate is 50-200mm / s.

[0017] In one embodiment, the present invention uses 100 TW / cm 2The copper nanowires are sintered on the patterned PI coating by high-intensity laser sintering technology to form patterned copper nanowire electrodes. The laser pulse wavelength output by the femtosecond laser amplifier is 800nm ​​and the pulse width is 50fs. The laser wavelength is adjusted to 532nm after passing through the optical parametric amplifier, and then the polarization direction is adjusted from horizontal polarization to circular polarization through a λ / 4 wave plate. A plasma channel is formed in the air through a 20cm plano-convex lens. The film surface is fine-tuned to be located 0.3mm in front of the plasma channel. The single pulse energy is 0.8-2.0mJ and the sintering rate is 100-1000mm / s.

[0018] In one embodiment, the copper nanowires are synthesized by a water reduction method.

[0019] On the other hand, the present invention also provides a method for preparing a gallium nitride HEMT device for real-time monitoring of temperature distribution, comprising: Step 1: Using a 0.5um p-GaN process, a GaN buffer layer, a GaN channel layer, an AlGaN barrier layer, a P-GaN layer, a Ti / Al / Ni / Au ohmic contact layer, a SiNx isolation layer, a field plate, a gate metal, a SiO2 passivation layer, a first metal layer, a first PI insulating layer, a first SiNx passivation layer, a second metal layer, a second PI insulating layer, a second SiNx passivation layer, and a third metal layer are sequentially formed on the substrate layer; Step 2: A patterned PI coating is formed on the second SiNx passivation layer and the third metal layer by photolithography technology, wherein the curing conditions are heating from room temperature to 170°C for 30 minutes, then heating to 350°C for 2 hours, the heating rate is 3.0-3.3°C / min, and the oxygen concentration is less than 100 ppm during the curing process; Step 3: A TaN film is formed on the patterned PI coating by focusing a pulsed laser beam on the surface of the Ta target. 2 The excess TaN film is removed by high-intensity laser to achieve the patterning of thin film resistors with low temperature coefficients. The entire removal process is carried out in an inert gas protection environment. The laser pulse wavelength output by the femtosecond laser amplifier is 800nm ​​and the pulse width is 30fs. A plasma channel is formed in the air through a 100cm plano-convex lens. The film surface is located at the center of the plasma channel through fine-tuning. The single pulse energy is 0.8-1.0mJ. Step 4: Use 100 TW / cm 2The high-intensity laser direct writing carbonization technology can realize the preparation of graphene-based carbon structures on the surface of patterned PI coatings. The laser pulse wavelength output by the femtosecond laser amplifier is 800nm. The laser power is adjusted by λ / 2 and polarization beam splitter. The laser wavelength is adjusted to 355nm after passing through the optical parametric amplifier. The film surface is fine-tuned to be 0.1mm in front of the plasma channel, and the graphene-based carbon structure is directly written for temperature sensing. The direct writing rate is 50-200mm / s. Step 5: Add ethylenediamine, Cu(NO3)2 solution and hydrazine solution to the sodium hydroxide solution in turn and stir vigorously with a glass rod. Then place the mixture in an oil bath at 60°C for aging and centrifugal cleaning to obtain CuNW copper nanowires with a length of <50 µm and a diameter of 80-120 nm. After vacuum filtration, transfer the CuNW to the surface of the GaN HEMT device and use a 100 TW / cm 2 The sintering of patterned copper nanowire electrodes is realized by using high-intensity laser sintering technology of the order of magnitude. The laser pulse wavelength output by the femtosecond laser amplifier is 800nm ​​and the pulse width is 50fs. The laser wavelength is adjusted to 532nm after passing through the optical parametric amplifier. The laser power is adjusted by λ / 2 and polarization beam splitter. Then, the polarization direction is adjusted from horizontal polarization to circular polarization by λ / 4 wave plate. The deflection of the lens in the scanning galvanometer system is controlled by writing Visual Studio program to realize ultrafast plasma nanoscale welding. The copper nanowire electrode is sintered by fine-tuning so that the coating surface is located 0.3mm in front of the plasma channel. The sintering rate is 100-1000 mm / s. The excess copper nanowire coating is removed by water washing. Finally, the preparation of copper nanowire electrodes is realized, and then the array temperature sensor is obtained. Step 6: Form a PI passivation layer on the array temperature sensor by photolithography technology.

[0020] Compared with the prior art, the present invention has the following beneficial effects: (1) The array temperature sensor, which is composed of TaN resistor film deposited by pulsed laser, carbon structure mainly composed of graphene carbonized by laser direct writing, and copper nanowire electrodes sintered by laser, is connected in a bridge manner. It can directly sense the temperature changes when the device is working, reducing the measurement errors caused by factors such as packaging materials in traditional methods.

[0021] (2) The array design enables real-time monitoring of the temperature at multiple points on the device surface, comprehensively reflects the thermal distribution of the device during operation, and improves the accuracy and reliability of temperature measurement.

[0022] (3) Based on 100 TW / cm 2This level of high-intensity laser has a high energy density, and the spot size and spatial position are controllable, which can achieve efficient sample preparation and rapid removal of thin film materials.

[0023] (4) Based on 100 TW / cm 2 Compared with traditional graphene preparation methods such as thermal reduction, mechanical exfoliation, chemical vapor deposition, and electrochemical methods, the preparation of graphene temperature sensors using high-intensity laser direct writing carbonization technology can be selectively processed, does not require a mask, and is faster, more convenient, and simpler.

[0024] (5) The preparation of copper nanowire electrodes is achieved based on ultrafast plasma nanoscale welding technology, which prevents the oxidation of CuNW during annealing, solves the problem that cannot be solved by conventional heat treatment under ambient conditions, and effectively reduces costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 A schematic structural diagram of a gallium nitride HEMT device for real-time monitoring of temperature distribution provided by a specific embodiment of the present invention; Figure 2 A schematic diagram of an array temperature sensor provided in a specific embodiment of the present invention. DETAILED DESCRIPTION

[0026] The technical solutions in the specific embodiments of the present invention are clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention.

[0027] like Figure 1 As shown, a specific embodiment of the present invention provides a gallium nitride HEMT device for real-time monitoring of temperature distribution, which includes, from bottom to top, a substrate layer 1, a GaN buffer layer 2, a GaN channel layer 3, an AlGaN barrier layer 4, a P-GaN layer 5, a Ti / Al / Ni / Au ohmic contact layer 6, a SiNx isolation layer 7, a field plate 8, a gate metal 9, a SiO2 passivation layer 10, a first metal layer 11, a first PI insulating layer 12, a first SiNx passivation layer 13, a second metal layer 14, a second PI insulating layer 15, a second SiNx passivation layer 16, a third metal layer 17, a patterned PI coating 18, and a TaN resistor film 19 deposited by a pulsed laser, and a temperature of 100 TW / cm 2 Graphene-based carbon structures directly carbonized by high-intensity laser writing at levels of 20 to 100 TW / cm 2 An array temperature sensor is formed by using copper nanowire electrodes 21 sintered by high-intensity laser sintering in an electric bridge connection manner, and a PI passivation layer 22 .

[0028] In a specific embodiment, the array temperature sensor composed of the TaN resistor film, graphene film and copper nanowire electrode is based on the theory of Wheatstone non-equilibrium bridge and is connected in a bridge manner. The array temperature sensor can directly sense the temperature change of the device during operation, reducing the measurement error caused by factors such as packaging materials in traditional methods. The array design realizes real-time monitoring of the temperature of multiple points on the surface of the device, comprehensively reflects the heat distribution of the device during operation, and improves the accuracy and reliability of temperature measurement. It provides instant and accurate thermal sensing data for thermal management strategies to ensure the stability and reliability of gallium nitride chips.

[0029] In addition, based on 100 TW / cm 2 The high-intensity laser has a high energy density, and the spot size and spatial position are controllable, which can achieve efficient sample preparation and rapid removal of thin film materials. 2 Compared with traditional graphene preparation methods such as thermal reduction, mechanical stripping, chemical vapor deposition, and electrochemical methods, the preparation of graphene temperature sensors using high-intensity laser direct writing carbonization technology can be selectively processed, does not require a mask, and is faster, more convenient, and simpler. The preparation of copper nanowire electrodes based on ultrafast plasma nanoscale welding technology prevents the oxidation of CuNW during annealing, solves problems that cannot be solved by conventional heat treatment under environmental conditions, and effectively reduces costs.

[0030] The array temperature sensor provided by the specific embodiment of the present invention comprises a TaN resistor film deposited by pulsed laser, a carbon structure mainly composed of graphene carbonized by laser direct writing, and a copper nanowire electrode sintered by laser, which are connected in a bridge manner to form an array temperature sensor, wherein the carbon structure mainly composed of graphene is used as a thermistor film resistor, and the TaN material deposited by pulsed laser is used as a thin film resistor with a low temperature coefficient to form an array temperature sensor. The present invention forms a bridge structure capable of accurately detecting temperature by connecting the temperature-sensitive thermistor film resistor and the temperature-insensitive TaN material through the copper nanowire electrode, such as Figure 2 As shown, in a specific embodiment, the array temperature sensor provided in this embodiment includes three unit temperature sensors distributed in an array, and each single temperature sensor is composed of four resistor structures, including a thermistor thin film resistor 1, three low temperature coefficient thin film resistors 3 and four electrodes 2, wherein the thermistor thin film resistor and the low temperature coefficient thin film resistor are connected by copper nanowire electrodes.

[0031] In this example, the TaN resistor film is first prepared by pulse laser deposition technology, and then by 2The laser pulse wavelength output by the femtosecond laser amplifier is 800nm, the pulse width is 30fs, and a plasma channel is formed in the air through a 100cm plano-convex lens. The film surface is located at the center of the plasma channel through fine-tuning, and the single pulse energy is 0.8-1.0mJ.

[0032] In this example, the graphene-based carbon structure is based on 100 TW / cm 2 It is prepared by high-intensity laser direct writing carbonization technology. The laser pulse wavelength output by the femtosecond laser amplifier is 800nm. After passing through the optical parametric amplifier, the laser wavelength is adjusted to 355nm. A plasma channel is formed in the air through a 20cm plano-convex lens. Through fine-tuning, the surface of the film, that is, the patterned PI coating surface is located 0.1mm in front of the plasma channel. The single pulse energy is 0.8-1.6mJ, and the direct writing rate is 50-200mm / s.

[0033] In this example, the copper nanowire electrode is first synthesized by water reduction method, and then 2 The high-intensity laser sintering technology of the order of magnitude is used to realize the sintering of patterned copper nanowire electrodes in the environment. The laser pulse wavelength output by the femtosecond laser amplifier is 800nm, and the pulse width is 50fs. The laser wavelength is adjusted to 532nm after passing through the optical parametric amplifier, and then the polarization direction is adjusted from horizontal polarization to circular polarization through a λ / 4 wave plate. A plasma channel is formed in the air through a 20cm plano-convex lens. Through fine-tuning, the surface of the patterned PI film is located 0.3mm in front of the plasma channel. The single pulse energy is 0.8-2.0mJ, and the sintering rate is 100-1000 mm / s.

[0034] In this example, a gallium nitride HEMT device for real-time monitoring of temperature distribution and a method for preparing the same are provided. The method comprises: Step 1: Use 0.5um p-GaN process to prepare GaN HEMT devices.

[0035] First, the unintentionally doped GaN buffer layer, GaN channel layer, AlGaN barrier layer and P-GaN layer are epitaxially grown on the substrate from bottom to top by metal organic chemical vapor deposition (MOCVD). The p-type gate region is defined by photolithography, and the p-type gate structure is formed by dry etching. Ohmic contacts are formed in the source and drain regions, using multilayer metal stacks such as Ti / Al / Ti / Au, and low-resistance contacts are achieved by annealing. Impurities are injected into the isolation region of the device by ion implantation technology to form a high-resistance isolation region to prevent current leakage. Photolithography and etching processes are used to groove the field plate region to improve the breakdown voltage and stability of the device. The width of the T-type gate is defined and etched to ensure that the gate width meets the design requirements and improve the switching performance of the device. A layer of metal is deposited on the top of the T-type gate to form a gate cap structure to enhance the stability and reliability of the gate. Vias are made in the ohmic contact area to connect the subsequent metal layers to ensure good electrical connection. The first metal layer is deposited for electrode connection of the source, drain and gate. Deposit a polyimide insulating layer, and form vias through photolithography and etching processes to connect different metal layers. Make through holes on the first metal layer to connect to the second metal layer. Deposit a second metal layer to further optimize the circuit layout and electrode connection. Deposit a polyimide insulating layer again, and form vias through photolithography and etching processes to connect different metal layers. Make through holes on the second metal layer to connect to the third metal layer. Deposit a third metal layer to complete the final electrode connection and circuit layout.

[0036] Step 2: A patterned PI (polyimide) coating was prepared on the second SiNx passivation layer and the third metal layer based on photolithography technology. After exposure and development, it was cured in a computer oxygen-free oven (Hefei Zhenping Electronic Technology Co., Ltd.) at a curing temperature of 350 degrees Celsius. The oxygen concentration during the curing process was less than 100 ppm.

[0037] Step 3: The TaN resistor film is prepared by pulsed laser deposition technology, by focusing the pulsed laser beam on the surface of the Ta target. The high energy density of the laser beam causes the surface of the target to heat up rapidly and ablate, generating a plasma plume containing Ta atoms. The plasma plume expands and diffuses directionally in nitrogen, and finally deposits on the substrate to form a TaN film. Then, the TaN film is deposited on the substrate by 100 TW / cm 2The excess TaN film was removed by high-intensity laser to achieve the patterning of thin film resistors with low temperature coefficients. During the entire removal process, in an inert gas protection environment, the laser pulse wavelength output by the femtosecond laser amplifier (Spectra-Physics) was 800nm ​​and the pulse width was 30fs. A plasma channel was formed in the air through a 100cm plano-convex lens. The film surface was fine-tuned to be located at the center of the plasma channel. The deflection of the lens in the scanning galvanometer system was controlled by writing a Visual Studio program to achieve patterned removal of the TaN film. The single pulse energy was 0-1.0mJ.

[0038] Step 4: Use 100 TW / cm 2 The graphene temperature sensor is prepared by the high-intensity laser direct writing carbonization technology. The laser pulse wavelength output by the femtosecond laser amplifier is 800nm. The laser power is adjusted by λ / 2 and polarization beam splitter. The laser wavelength is adjusted to 355nm after passing through the optical parametric amplifier. The film surface is fine-tuned to be located 0.1mm in front of the plasma channel. A graphene-based carbon structure is directly written on the surface of the patterned PI coating for temperature sensing. The direct writing rate is 50-200mm / s.

[0039] Step 5: The copper nanowires were synthesized by water reduction method. Ethylenediamine, Cu(NO3)2 solution and hydrazine solution were added to sodium hydroxide solution in sequence and stirred vigorously with a glass rod. The mixture was then aged in an oil bath at 60°C and centrifuged to obtain CuNWs with a length of <50 µm and a diameter of ~80-120 nm. The CuNWs were vacuum filtered and transferred to the surface of the GaN HEMT device. 2 The sintering of patterned copper nanowire electrodes is realized by using high-intensity laser sintering technology. The laser pulse wavelength output by the femtosecond laser amplifier is 800nm ​​and the pulse width is 50fs. After passing through the optical parametric amplifier, the laser wavelength is adjusted to 532nm. The laser power is adjusted by λ / 2 and polarization beam splitter. Then, the polarization direction is adjusted from horizontal polarization to circular polarization by λ / 4 wave plate. The deflection of the lens in the scanning galvanometer system is controlled by writing Visual Studio program to realize ultrafast plasma nanoscale welding. The copper nanowire electrode is sintered by fine-tuning the coating surface to 0.3mm in front of the plasma channel. The sintering rate is 100-1000 mm / s. The excess copper nanowire coating is removed by water washing, and finally the preparation of copper nanowire electrodes is realized.

[0040] Step 6: Preparation of a patterned PI passivation layer based on photolithography technology. Specifically, the same as step 2, after exposure and development, it is cured in a computer oxygen-free oven (Hefei Zhenping Electronic Technology Co., Ltd.) at a curing temperature of 350 degrees Celsius. During the curing process, the oxygen concentration is less than 100 ppm.

Claims

1. A gallium nitride HEMT device for real-time monitoring of temperature distribution, characterized in that: From bottom to top, it includes a substrate layer, a GaN buffer layer, a GaN channel layer, an AlGaN barrier layer, a P-GaN layer, a Ti / Al / Ni / Au ohmic contact layer, a SiNx isolation layer, a field plate, a gate metal, a SiO2 passivation layer, a first metal layer, a first PI insulating layer, a first SiNx passivation layer, a second metal layer, a second PI insulating layer, a second SiNx passivation layer, a third metal layer, a patterned PI coating, an array temperature sensor, and a PI passivation layer; The array temperature sensor is composed of a TaN resistance film deposited by a pulsed laser, a hundred TW / cm 2 Graphene-based carbon structures and hundreds of TW / cm 2 The copper nanowire electrodes sintered by high-intensity laser sintering are constructed in a bridge connection manner.

2. The gallium nitride HEMT device for real-time monitoring of temperature distribution according to claim 1, characterized in that: The graphene-based carbon structure is used as a thermistor film resistor, the TaN resistor film is used as a low temperature coefficient thin film resistor, and the graphene-based carbon structure and the TaN resistor film are connected in a bridge connection manner through the copper nanowire electrode to form an array temperature sensor.

3. The gallium nitride HEMT device for real-time monitoring of temperature distribution according to claim 1, characterized in that: The TaN resistance film is prepared by the following method, including: Firstly, pulsed laser deposition technology is used to prepare TaN resistor thin film, and then 2 The excess TaN film is removed by a high-intensity laser of the order of 1000 nm to achieve the patterning of thin-film resistors with low temperature coefficients.

4. The gallium nitride HEMT device for real-time monitoring of temperature distribution according to claim 3, characterized in that: The passing rate is 100 TW / cm 2 The excess TaN film is removed by a high-intensity laser of magnitude 800 nm. The laser pulse wavelength output by the femtosecond laser amplifier is 800 nm and the pulse width is 30 fs. A plasma channel is formed in the air through a 100 cm plano-convex lens. The film surface is located at the center of the plasma channel through fine-tuning. The single pulse energy is 0.8-1.0 mJ.

5. The gallium nitride HEMT device for real-time monitoring of temperature distribution according to claim 1, characterized in that: Hundred TW / cm 2 The carbon structure mainly composed of graphene is directly written by a high-intensity laser of magnitude 200,000. The laser pulse wavelength output by the femtosecond laser amplifier is 800nm. After passing through the optical parametric amplifier, the laser wavelength is adjusted to 355nm. A plasma channel is formed in the air through a 20cm plano-convex lens. Through fine-tuning, the surface of the film is located 0.1mm in front of the plasma channel. The single pulse energy is 0.8-1.6mJ, and the direct writing rate is 50-200mm / s.

6. The gallium nitride HEMT device for real-time monitoring of temperature distribution according to claim 1, characterized in that: Using 100 TW / cm 2 The copper nanowires were sintered on the patterned PI coating by high-intensity laser sintering technology to form patterned copper nanowire electrodes. The laser pulse wavelength output by the femtosecond laser amplifier was 800nm ​​and the pulse width was 50fs. The laser wavelength was adjusted to 532nm after passing through the optical parametric amplifier. The polarization direction was adjusted from horizontal polarization to circular polarization through a λ / 4 wave plate. A plasma channel was formed in the air through a 20cm plano-convex lens. The film surface was fine-tuned to be located 0.3mm in front of the plasma channel. The single pulse energy was 0.8-2.0mJ and the sintering rate was 100-1000 mm / s.

7. The gallium nitride HEMT device for real-time monitoring of temperature distribution according to claim 6, characterized in that: The copper nanowires are synthesized by a water reduction method.

8. A method for preparing a gallium nitride HEMT device for real-time monitoring of temperature distribution according to any one of claims 1 to 7, characterized in that: include: Step 1: Using a 0.5um p-GaN process, a GaN buffer layer, a GaN channel layer, an AlGaN barrier layer, a P-GaN layer, a Ti / Al / Ni / Au ohmic contact layer, a SiNx isolation layer, a field plate, a gate metal, a SiO2 passivation layer, a first metal layer, a first PI insulating layer, a first SiNx passivation layer, a second metal layer, a second PI insulating layer, a second SiNx passivation layer, and a third metal layer are sequentially formed on the substrate layer; Step 2: A patterned PI coating is formed on the second SiNx passivation layer and the third metal layer by photolithography technology, wherein the curing conditions are heating from room temperature to 170°C for 30 minutes, then heating to 350°C for 2 hours, the heating rate is 3.0-3.3°C / min, and the oxygen concentration is less than 100 ppm during the curing process; Step 3: A TaN film is formed on the patterned PI coating by focusing a pulsed laser beam on the surface of the Ta target. 2 The excess TaN film is removed by high-intensity laser to achieve the patterning of thin film resistors with low temperature coefficients. The entire removal process is carried out in an inert gas protection environment. The laser pulse wavelength output by the femtosecond laser amplifier is 800nm ​​and the pulse width is 30fs. A plasma channel is formed in the air through a 100cm plano-convex lens. The film surface is located at the center of the plasma channel through fine-tuning. The single pulse energy is 0.8-1.0mJ. Step 4: Use 100 TW / cm 2 The high-intensity laser direct writing carbonization technology can realize the preparation of graphene-based carbon structures on the surface of patterned PI coatings. The laser pulse wavelength output by the femtosecond laser amplifier is 800nm. The laser power is adjusted by λ / 2 and polarization beam splitter. The laser wavelength is adjusted to 355nm after passing through the optical parametric amplifier. The film surface is fine-tuned to be 0.1mm in front of the plasma channel, and the graphene-based carbon structure is directly written for temperature sensing. The direct writing rate is 50-200mm / s. Step 5: Add ethylenediamine, Cu(NO3)2 solution and hydrazine solution to the sodium hydroxide solution in turn and stir vigorously with a glass rod. Then place the mixture in an oil bath at 60°C for aging and centrifugal cleaning to obtain CuNW copper nanowires with a length of <50 µm and a diameter of 80-120 nm. After vacuum filtration, transfer the CuNW to the surface of the GaN HEMT device and use a 100 TW / cm 2 The sintering of patterned copper nanowire electrodes is realized by using high-intensity laser sintering technology of the order of magnitude. The laser pulse wavelength output by the femtosecond laser amplifier is 800nm ​​and the pulse width is 50fs. The laser wavelength is adjusted to 532nm after passing through the optical parametric amplifier. The laser power is adjusted by λ / 2 and polarization beam splitter. Then, the polarization direction is adjusted from horizontal polarization to circular polarization by λ / 4 wave plate. The deflection of the lens in the scanning galvanometer system is controlled by writing Visual Studio program to realize ultrafast plasma nanoscale welding. The copper nanowire electrode is sintered by fine-tuning so that the coating surface is located 0.3mm in front of the plasma channel. The sintering rate is 100-1000 mm / s. The excess copper nanowire coating is removed by water washing. Finally, the preparation of copper nanowire electrodes is realized, and then the array temperature sensor is obtained. Step 6: Form a PI passivation layer on the array temperature sensor by photolithography technology.

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