Oxide-doped indium oxide-based target material as well as preparation method and application thereof

Abstract

The invention belongs to the technical field of target materials, and particularly relates to an oxide-doped indium oxide-based target material as well as a preparation method and application thereof. The oxide doped indium oxide-based target material is prepared from the following components in parts by mass: 94.5 to 99.3 parts of In2O3, 0.2 to 1.5 parts of tetravalent oxide including TiO2, 0.2 to 1.5 parts of ZrO2, 0.2 to 1.5 parts of SiO2 and 0.1 to 1 part of high valence oxide, the high-valence oxide is prepared from one or more of CrO3, SeO3, WO3, MoO3 and Mn2O7. The oxide-doped indium oxide-based target material is low in doping concentration and high in density, and a transparent conductive oxide film (TCO film) prepared from the oxide-doped indium oxide-based target material has high carrier mobility and near-infrared light transmittance.

Description

Technical Field

[0001] The present invention belongs to the technical field of target materials, and in particular relates to an oxide-doped indium oxide-based target material and a preparation method and application thereof. Background Art

[0002] Highly doped metal oxides, commonly known as transparent conductive oxides (TCOs), are the most widely used and studied transparent electrodes to date. Traditional TCO materials are tin, zinc, cadmium and indium-based oxides (tin oxide, zinc oxide, CdO, In2O3). Conventional TCOs are binary systems, which are essentially polycrystalline materials, doped with halides, group XIII or XV elements, such as ITO, IZO, IGZO, AZO, ATO, etc.

[0003] Crystalline silicon (c-Si) can absorb near-infrared light up to 1200nm. Therefore, when TCO thin films are used as carrier transport layers in heterojunction (HJT) batteries, they are required to have high optical transmittance not only in the visible light region, but also in the near-infrared region.

[0004] At present, the light absorption loss of the TCO layer mainly comes from the infrared parasitic absorption caused by free carriers. When the carrier concentration of the TCO layer is too high, the near-infrared parasitic absorption peak of the free carriers moves to the short-wavelength, which reduces the transmittance of the film in the near-infrared region, thereby reducing the short-circuit current density Jsc of the HJT battery. Therefore, for the TCO layer used in the HJT battery, its carrier concentration should be limited to broaden the optical transmission window, thereby improving the spectral response and short-circuit current density of the HJT battery.

[0005] Transparent conductive oxide films prepared by ITO targets (mainly indium oxide) have long been widely used in flat panel displays, solar cells, organic light-emitting diodes, low-emissivity glass, special function window coatings, transparent thin-film transistors and flexible electronic devices due to their excellent optoelectronic properties such as wide band gap, low resistivity, high light transmittance in the visible light region and high light reflectivity in the infrared spectrum region.

[0006] The photoelectric properties of TCO films prepared by indium oxide-based targets doped with different elements vary. With the development of industries such as panel display and photovoltaic cells, higher optical and electrical performance requirements are put forward for TCO films. The carrier mobility of TCO films prepared by pure In2O3 targets is as high as 80-150cm 2 / V·S, but its sintering temperature is too high (In2O3 melting point 2000℃), and it is generally reduced by doping oxides. Low-doping indium oxide targets, due to the high indium content, need to be sintered at a temperature of 1800-1900℃ to prepare high-density targets suitable for physical vapor deposition (PVD) sputtering coating, which consumes a lot of energy and has high requirements for sintering equipment.

[0007] Traditional ITO targets, adding 10wt% SnO2 as a sintering aid, can significantly reduce the sintering temperature of indium oxide targets to below 1600℃, but too high doping concentration will affect the light transmittance and electrical properties of the film. The carrier mobility of 90 / 10wt% ITO targets is only 30-40cm 2 / V·S, and the transmittance in the near-infrared region is less than 80%. Therefore, it is urgent to develop a target material with low doping concentration and high density, and the TCO film prepared by the target material has high carrier mobility and near-infrared transmittance. Summary of the invention

[0008] In view of this, the object of the present invention is to provide an oxide-doped indium oxide-based target material and a preparation method and application thereof. The oxide-doped indium oxide-based target material has low doping concentration and high density, and a transparent conductive oxide film (TCO film) prepared therefrom has high carrier mobility and near-infrared transmittance.

[0009] In order to achieve the above object, the present invention provides the following technical solutions:

[0010] The present invention provides an oxide-doped indium oxide-based target material, which comprises the following components in parts by mass:

[0011] In2O3 94.5~99.3 parts,

[0012] The tetravalent oxide includes 0.2 to 1.5 parts of TiO2, 0.2 to 1.5 parts of ZrO2, and 0.2 to 1.5 parts of SiO2.

[0013] 0.1 to 1 part of high-valent oxide; the high-valent oxide includes one or more of CrO3, SeO3, WO3, MoO3 and Mn2O7.

[0014] Preferably, the relative density of the oxide-doped indium oxide-based target material is ≥99%, the average grain size is <9 μm, and the volume resistivity is <0.6 mΩ·cm.

[0015] The present invention also provides a method for preparing the oxide-doped indium oxide-based target material described in the above technical solution, comprising the following steps:

[0016] In2O3, tetravalent oxide, high-valent oxide, water and dispersant are mixed according to mass parts, the obtained mixed slurry is ball-milled, the obtained ball-milled slurry, plasticizer and binder are mixed, and granulation is performed to obtain mixed oxide powder;

[0017] The mixed oxide powder is formed, and the obtained target blank is degreased and sintered in sequence to obtain the oxide-doped indium oxide-based target.

[0018] Preferably, the sintering temperature is 1200-1450° C., and the sintering time is 20-40 hours.

[0019] Preferably, the binder is polyvinyl alcohol; the mass of the binder is 0.5 to 3% of the total mass of the In2O3, tetravalent oxides and high-valent oxides.

[0020] Preferably, the plasticizer is polyethylene glycol; the mass of the plasticizer is 0.5 to 1.5% of the total mass of the In2O3, the tetravalent oxide and the high-valent oxide.

[0021] Preferably, the forming is cold isostatic pressing; the pressure of the cold isostatic pressing is 150-300 MPa, and the holding time is 10-30 min.

[0022] The present invention also provides the use of the oxide-doped indium oxide-based target material described in the above technical solution or the oxide-doped indium oxide-based target material prepared by the preparation method described in the above technical solution in a display panel or a photovoltaic cell.

[0023] The present invention also provides a transparent conductive oxide film, which is obtained by sputtering and coating an oxide-doped indium oxide-based target material;

[0024] The oxide-doped indium oxide-based target material is the oxide-doped indium oxide-based target material described in the above technical solution or the oxide-doped indium oxide-based target material prepared by the preparation method described in the above technical solution.

[0025] Preferably, the sputtering coating is physical vapor deposition sputtering coating; the power of the sputtering coating is 120-200 W; and the thickness of the sputtering coating is 80-120 nm.

[0026] The present invention provides an oxide-doped indium oxide-based target material, which comprises the following components in parts by mass:

[0027] In2O3 94.5~99.3 parts,

[0028] The tetravalent oxide includes 0.2 to 1.5 parts of TiO2, 0.2 to 1.5 parts of ZrO2, and 0.2 to 1.5 parts of SiO2.

[0029] 0.1 to 1 part of high-valent oxide; the high-valent oxide includes one or more of CrO3, SeO3, WO3, MoO3 and Mn2O7.

[0030] The present invention dopes low concentrations of tetravalent oxides (TiO2, ZrO2, SiO2) and hexavalent and heptavalent metal oxides (Cr(+6), Se(+6), Mo(+6), W(+6), Mn(+7)) into In2O3. The valence of the doped high-valent metal ions is greatly different from that of the ions replaced in indium oxide. Each doped hexavalent and heptavalent metal ion provides more free carriers than the tetravalent metal ions, thereby improving the doping efficiency. At the same doping concentration, a higher free carrier concentration can be obtained. The present invention reduces the total doping concentration and improves the carrier mobility by doping hexavalent and heptavalent metal ions. High mobility can reduce long-wave absorption and improve the infrared transmittance of the material, so that the oxide-doped indium oxide-based target material can improve the visible light and near-infrared transmittance of the film prepared therefrom while maintaining high mobility. The results of the examples show that the oxide-doped indium oxide-based target provided by the present invention has a relative density of ≥99%, an average grain size of <9 μm, and a bulk resistivity of <0.6 mΩ·cm, and has the characteristics of low doping and high density.

[0031] The present invention also provides a method for preparing the above-mentioned oxide-doped indium oxide-based target material. The present invention dopes TiO2, ZrO2, and SiO2 as sintering aids. TiO2, ZrO2, and SiO2 can form a low-melting point eutectic during the sintering process, and form a liquid phase at a high temperature, which surrounds the indium oxide grain boundaries, greatly promoting particle rearrangement and mass transfer processes, thereby promoting sintering and reducing the temperature required for sintering.

[0032] The present invention uses oxide-doped indium oxide-based targets to deposit transparent conductive oxide films (TCO films) by physical vapor deposition (PVD) sputtering coating, and the mobility reaches 70cm 2 / (V·S), the average transmittance at 400-1200nm is greater than 88%, which meets the requirements of high transmittance and high mobility, and has excellent photoelectric properties. This target material can be directly used in display panels, photovoltaic cells and other industries. DETAILED DESCRIPTION

[0033] The present invention provides an oxide-doped indium oxide-based target material, which comprises the following components in parts by mass:

[0034] In2O3 94.5~99.3 parts,

[0035] The tetravalent oxide includes 0.2 to 1.5 parts of TiO2, 0.2 to 1.5 parts of ZrO2, and 0.2 to 1.5 parts of SiO2.

[0036] 0.1 to 1 part of high-valent oxide; the high-valent oxide includes one or more of CrO3, SeO3, WO3, MoO3 and Mn2O7.

[0037] Unless otherwise specified, the present invention has no special requirements on the sources of the raw materials used, and commercially available products known to those skilled in the art may be used.

[0038] The oxide-doped indium oxide-based target provided by the present invention comprises 94.5 to 99.3 parts by mass of In2O3. As an embodiment, the mass of In2O3 is 96.5 to 99.3 parts, and in a specific embodiment, it is 98 to 99.2 parts.

[0039] The oxide-doped indium oxide-based target provided by the present invention includes a tetravalent oxide. Based on 1 mass part of In2O3, the tetravalent oxide includes 0.2 to 1.5 mass parts of TiO2. As an embodiment, the mass part of TiO2 is 0.2 to 1 part, and in a specific embodiment, it is 0.2 to 0.6 part.

[0040] Based on 1 part by mass of In2O3, the tetravalent oxide includes 0.2 to 1.5 parts by mass of ZrO2. As an embodiment, the mass of ZrO2 is 0.2 to 1 part, and in a specific embodiment, it is 0.2 to 0.6 parts.

[0041] Based on 1 part by mass of In2O3, the tetravalent oxide includes 0.2 to 1.5 parts by mass of SiO2. As an embodiment, the mass of SiO2 is 0.2 to 1 part, and in a specific embodiment, it is 0.2 to 0.6 parts.

[0042] The oxide-doped indium oxide-based target provided by the present invention includes 0.1 to 1 parts by mass of a high-valent oxide based on 1 part by mass of In2O3; the high-valent oxide includes one or more of CrO3, SeO3, WO3, MoO3 and Mn2O7, and in specific embodiments, CrO3, or SeO3, or WO3 and Mn2O7, or MoO3 and Mn2O7. As an embodiment, the mass portion of the high-valent oxide is 0.1 to 0.5 parts, and in specific embodiments, it is 0.2 to 0.4 parts.

[0043] The present invention simultaneously dopes hexavalent and / or heptavalent metal oxides Cr(+6), Se(+6), Mo(+6), W(+6), and Mn(+7). The valence of the doped high-valent metal ions is greatly different from that of the ions replaced in indium oxide. Each doped high-valent metal ion provides more free carriers than the tetravalent metal ions, thereby improving the doping efficiency. Under the same doping concentration, a higher free carrier concentration can be obtained, thereby improving the carrier mobility. High-concentration doping can reduce the mobility of the material, while doping with high-valent elements can reduce the doping concentration, thereby improving the mobility of the material. High mobility can reduce long-wave absorption, thereby improving the infrared transmittance of the material. At the same time, whether it is a tetravalent oxide or a hexavalent and heptavalent oxide, excessive addition will lead to a reduction in carrier mobility and near-infrared transmittance, so while ensuring that a high-density indium oxide-based target material can be obtained, the doping concentration is reduced as much as possible.

[0044] As an embodiment, the relative density of the oxide-doped indium oxide-based target material is ≥99%, 99.18-99.6% in a specific embodiment, the average grain size is <9 μm, 6.8-8.5 μm in a specific embodiment, and the volume resistivity is <0.6 mΩ·cm, 0.45-0.57 mΩ·cm in a specific embodiment.

[0045] The present invention also provides a method for preparing the oxide-doped indium oxide-based target material described in the above technical solution, comprising the following steps:

[0046] In2O3, tetravalent oxide, high-valent oxide, water and dispersant are mixed according to mass parts, the obtained mixed slurry is ball-milled, the obtained ball-milled slurry, plasticizer and binder are mixed, and granulation is performed to obtain mixed oxide powder;

[0047] The mixed oxide powder is formed, and the obtained target blank is degreased and sintered in sequence to obtain the oxide-doped indium oxide-based target.

[0048] The present invention mixes In2O3, tetravalent oxide, high-valent oxide, water and dispersant according to parts by mass, ball-mills the obtained mixed slurry, mixes the obtained ball-milled slurry, a plasticizer and a binder, and granulates to obtain mixed oxide powder.

[0049] As an implementation mode, the In2O3, tetravalent oxides, and high-valent oxides are all powders with a purity of ≥99.99%; the dispersant is polyvinyl pyrrolidone (PVP) or triethanolamine, and in a specific embodiment, it is polyvinyl pyrrolidone; the mass of the dispersant is 0.5-1.5% of the total mass of the In2O3, tetravalent oxides, and high-valent oxides, and in a specific embodiment, it is 0.7-1%.

[0050] As an implementation mode, the solid content of the mixed slurry is 45-60%, and in a specific embodiment, it is 50-55%; the grinding balls used in the ball mill are zirconium beads; the ball diameter of the zirconium beads is 0.2-0.6 mm, and in a specific embodiment, it is 0.2-0.4 mm; the rotation speed of the ball mill is 1500-2500 rpm, and in a specific embodiment, it is 2000-2200 rpm; the ball milling time is 2-5 h, and in a specific embodiment, it is 2-4 h.

[0051] As an embodiment, the particle size of each component in the slurry after ball milling is less than 0.2 μm.

[0052] The function of the ball mill in the present invention is to refine the powder particle size while mixing the slurry. The powder particle size mainly affects the molding and sintering processes, and ultimately affects the sintering density of the product.

[0053] As an embodiment, the binder is one or more of polyvinyl alcohol, carboxymethyl cellulose, polyacrylamide and polyacrylic acid salt, and in a specific embodiment, it is polyvinyl alcohol (PVA); the mass of the binder is 0.5-3% of the total mass of the In2O3, tetravalent oxides and high-valent oxides, and in a specific embodiment, it is 1-2%.

[0054] As an embodiment, the plasticizer is polyethylene glycol (PEG); the mass of the plasticizer is 0.5-1.5% of the total mass of the In2O3, the tetravalent oxide and the high-valent oxide, and in a specific embodiment, it is 1-1.2%.

[0055] As an embodiment, the obtained ball-milled slurry, plasticizer and binder are mixed under stirring conditions; the stirring speed is 40 to 80 rpm, and in a specific embodiment, it is 60 to 70 rpm. The present invention has no special limitation on the stirring time, and the stirring time can be continued until the materials are uniformly mixed.

[0056] As an embodiment, the granulation is spray drying; the outlet air temperature of the spray drying is 95-110°C, 100-105°C in a specific embodiment, and the inlet air temperature is 220-245°C, 225-235°C in a specific embodiment. The present invention has no special limitation on the time of the spray drying until the slurry is sprayed.

[0057] As an embodiment, the specific surface area of ​​the mixed oxide powder is 8 to 20 m 2 / g, in the specific embodiment, 9 to 11 m 2 / g.

[0058] After obtaining the mixed oxide powder, the present invention shapes the mixed oxide powder, and the obtained target blank is degreased and sintered in sequence to obtain the oxide-doped indium oxide-based target.

[0059] As an embodiment, the forming is cold isostatic pressing; the pressure of the cold isostatic pressing is 150-300 MPa, and in a specific embodiment, it is 200-280 MPa, and the holding time is 10-30 min, and in a specific embodiment, it is 15-20 min.

[0060] The cold isostatic pressing in the present invention can increase the density of the target material blank, which is beneficial to making the sintered target material denser.

[0061] As an embodiment, the degreasing temperature is 550-750° C., and in a specific embodiment, it is 600-650° C.; the degreasing time is 5-24 hours, and in a specific embodiment, it is 10-20 hours; and the degreasing is carried out in air.

[0062] The function of degreasing in the present invention is to volatilize the dispersant, binder and plasticizer added in the mixing and granulation process, so as to avoid the subsequent exhaust gas affecting the sintering.

[0063] As an embodiment, the sintering temperature is 1200-1450°C, and in a specific embodiment, it is 1300-1450°C; the sintering time is 20-40h, and in a specific embodiment, it is 30-40h; the sintering is carried out in an oxygen atmosphere; the oxygen pressure of the oxygen atmosphere is 0.05-0.1MPa, and in a specific embodiment, it is 0.1MPa.

[0064] Sintering is the main process of densifying the target blank to form a dense oxide target. The present invention can inhibit the decomposition of the oxide raw material at high temperature by increasing the oxygen partial pressure in the sintering environment, thereby increasing the density of the target.

[0065] TiO2, ZrO2, and SiO2 can form a low-melting point eutectic during the sintering process, forming a liquid phase at high temperature, surrounding the indium oxide grain boundaries, greatly promoting particle rearrangement and mass transfer processes, thereby promoting sintering and reducing the temperature required for sintering.

[0066] The present invention also provides the use of the oxide-doped indium oxide-based target material described in the above technical solution or the oxide-doped indium oxide-based target material prepared by the preparation method described in the above technical solution in a display panel or a photovoltaic cell.

[0067] The present invention also provides a transparent conductive oxide film, which is obtained by sputtering and coating an oxide-doped indium oxide-based target material;

[0068] The oxide-doped indium oxide-based target material is the oxide-doped indium oxide-based target material described in the above technical solution or the oxide-doped indium oxide-based target material prepared by the preparation method described in the above technical solution.

[0069] As an implementation mode, the sputtering coating is physical vapor deposition sputtering coating; the power of the sputtering coating is 120-200W, and in a specific embodiment, it is 180W; the sputtering gas used for the sputtering coating is argon, and the atmosphere used for the sputtering coating is a mixed gas of oxygen and hydrogen, wherein the volume ratio of oxygen to hydrogen is 1.5-2:1, and in a specific embodiment, it is 1.8:1; the thickness of the sputtering coating is 80-120nm, and in a specific embodiment, it is 90-100nm.

[0070] As an embodiment, the carrier mobility of the transparent conductive oxide film is ≥70cm 2 / (V·S), 73-84 cm in the specific embodiment 2 / (V·S), the average light transmittance at 400-1200 nm is >88%, and in the specific embodiment, it is 88.4-90.1%.

[0071] The present invention has no special limitation on the application method of the transparent conductive oxide film, and any application method known in the art may be used.

[0072] The technical solutions of the present invention will be clearly and completely described below in conjunction with the embodiments of the present invention, but they should not be construed as limiting the protection scope of the present invention.

[0073] Example 1

[0074] S1. Preparation of mixed oxide powders:

[0075] In2O3 powder with a purity of 99.99% was mixed with other doped oxide powders with a purity of 99.99%, and water and a dispersant (PVP of 1% of the total mass of In2O3, tetravalent oxides and high-valent oxides) were added to obtain a mixed slurry with a solid content of 50%. The mixture was ground with Φ=0.3 mm zirconium beads for 4 h at a rotation speed of 2100 rpm. The particle size of each component in the slurry after ball milling was <0.2 μm. A binder (PVA of 2% of the total mass of In2O3, tetravalent oxides and high-valent oxides) and a plasticizer (PEG of 1% of the total mass of In2O3, tetravalent oxides and high-valent oxides) were added to the obtained slurry after ball milling. The mixture was stirred at 60 rpm until uniformly mixed, and then spray-dried until the slurry was sprayed. The inlet air temperature was 235°C and the outlet air temperature was 105°C to obtain a mixed oxide powder (specific surface area of ​​9 to 11 m 2 / g);

[0076] S2. Green billet forming:

[0077] The mixed oxide powder is injected into a rotating target mold, and a cold isostatic press is used to form the mixed oxide powder. The forming pressure is 280 MPa, and the holding time is 20 min to obtain a target blank.

[0078] S3, debinding and sintering:

[0079] The target blank was degreased in air at 650° C. for 10 h, and then sintered at a high temperature of 1450° C. and 40 h in an oxygen atmosphere (oxygen pressure of 0.1 MPa) to obtain an oxide-doped indium oxide-based target.

[0080] Examples 2 to 9 and Comparative Examples 1 to 6

[0081] The difference between Examples 2 to 9 and Comparative Examples 1 to 6 and Example 1 is that the components and their contents are different, and the specific contents are shown in Table 1.

[0082] Table 1 Components and contents of each embodiment and comparative example

[0083]

[0084] Application Example 1

[0085] On the cleaned glass substrate, the oxide-doped indium oxide-based target prepared in Example 1 was used to deposit the TCO thin film by physical vapor deposition sputtering coating. The coating power was 180 W, the sputtering gas was Ar, and the coating atmosphere was an H2 / O2 mixed gas with a volume ratio of oxygen and hydrogen of 1.8:1. The deposited film thickness was 100 nm to obtain a transparent conductive oxide thin film (TCO thin film).

[0086] Application Examples 2 to 9 and Comparative Application Examples 1 to 6

[0087] The difference from Application Example 1 is that the oxide-doped indium oxide-based target material prepared in Example 1 is replaced by the targets prepared in Examples 2 to 9 and Comparative Examples 1 to 6, respectively.

[0088] Performance Testing

[0089] 1. Processing and binding:

[0090] The target materials prepared in the above-mentioned embodiments and comparative examples were processed according to the dimensions in the drawings, bound to the titanium tube, and subjected to ultrasonic flaw inspection to find no dark cracks, and then a subsequent coating test was carried out.

[0091] 2. Coating test:

[0092] The density of the target material was measured by the Archimedes drainage method, and the resistivity was tested by a four-probe tester.

[0093] On the cleaned glass substrate, the target materials prepared in the above embodiments and comparative examples were used to deposit TCO thin films by sputtering coating. The coating power was 180 W, the sputtering gas was Ar, the coating atmosphere was a H2 / O2 mixed gas, the deposited film thickness was 100 mm, and the mobility of the film was tested by a Hall effect tester, and the transmittance of the film was tested by an ultraviolet spectrophotometer.

[0094] The performance test results of the target materials prepared in each embodiment and comparative example, and the TCO films prepared therefrom are shown in Table 2.

[0095] Table 2 Performance test results of various embodiments and comparative examples

[0096]

[0097] As can be seen from the above table, the relative density of the oxide-doped indium oxide-based target materials prepared in Examples 1 to 9 of the present invention is ≥99%, the average grain size is <9 μm, and the volume resistivity is less than 0.6 mΩ·cm. The target materials have the characteristics of low doping and high density. The TCO film prepared therefrom has a carrier mobility of 70 cm 2 / (V·S) or above, the average transmittance (400-1200nm)>88%, and the requirements of high transmittance and high mobility are met at the same time.

[0098] In contrast, the performance of Comparative Example 1 is significantly attenuated without the addition of hexavalent and heptavalent oxides. Meanwhile, Comparative Examples 3 to 5 show that when only hexavalent and heptavalent oxides are added but the tetravalent oxide sintering aid is missing, the density is also significantly affected, resulting in reduced target quality. Comparative Example 6 shows that the amount of tetravalent oxide sintering aid added is too small, the sintering effect is also limited, and densification cannot be achieved, resulting in a relatively low sintering density.

[0099] In summary, the present invention obtains a low-doped, high-density oxide-doped indium oxide-based target by adding a suitable amount of tetravalent oxide sintering aid and appropriate doping amounts of hexavalent and heptavalent oxides. The TCO film prepared therefrom achieves the purposes of high transmittance and high mobility at the same time.

[0100] Although the above embodiment describes the present invention in detail, it is only a part of the embodiments of the present invention rather than all the embodiments. People can also obtain other embodiments based on this embodiment without creativity, and these embodiments all fall within the protection scope of the present invention.

Claims

1. An oxide-doped indium oxide-based target, characterized in that: Calculated by mass, it includes the following components: In2O3 94.5~99.3 parts, The tetravalent oxide includes 0.2 to 1.5 parts of TiO2, 0.2 to 1.5 parts of ZrO2, and 0.2 to 1.5 parts of SiO2. 0.1 to 1 part of high-valent oxide; the high-valent oxide includes one or more of CrO3, SeO3, WO3, MoO3 and Mn2O7.

2. The oxide-doped indium oxide-based target according to claim 1, characterized in that: The relative density of the oxide-doped indium oxide-based target material is ≥99%, the average grain size is <9 μm, and the volume resistivity is <0.6 mΩ·cm.

3. The method for preparing an oxide-doped indium oxide-based target material according to claim 1 or 2, characterized in that: The following steps are involved: In2O3, tetravalent oxide, high-valent oxide, water and dispersant are mixed according to mass parts, the obtained mixed slurry is ball-milled, the obtained ball-milled slurry, plasticizer and binder are mixed, and granulation is performed to obtain mixed oxide powder; The mixed oxide powder is formed, and the obtained target blank is degreased and sintered in sequence to obtain the oxide-doped indium oxide-based target.

4. The preparation method according to claim 3, characterized in that: The sintering temperature is 1200-1450° C., and the sintering time is 20-40 hours.

5. The preparation method according to claim 3, characterized in that: The binder is polyvinyl alcohol; the mass of the binder is 0.5-3% of the total mass of the In2O3, the tetravalent oxide and the high-valent oxide.

6. The preparation method according to claim 3, characterized in that: The plasticizer is polyethylene glycol; the mass of the plasticizer is 0.5-1.5% of the total mass of the In2O3, the tetravalent oxide and the high-valent oxide.

7. The preparation method according to claim 3, characterized in that: The molding is cold isostatic pressing; the pressure of the cold isostatic pressing is 150-300 MPa, and the holding time is 10-30 minutes.

8. Use of the oxide-doped indium oxide-based target material according to claim 1 or 2 or the oxide-doped indium oxide-based target material prepared by the preparation method according to any one of claims 3 to 7 in display panels or photovoltaic cells.

9. A transparent conductive oxide film, characterized in that: It is prepared by sputtering a target material doped with oxide and coated with an indium oxide-based target; The oxide-doped indium oxide-based target is the oxide-doped indium oxide-based target according to claim 1 or 2 or the oxide-doped indium oxide-based target prepared by the preparation method according to any one of claims 3 to 7.

10. The transparent conductive oxide thin film according to claim 9, characterized in that: The sputtering coating is physical vapor deposition sputtering coating; the power of the sputtering coating is 120-200W; the thickness of the sputtering coating is 80-120nm.

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