High-power-density welding machine power supply based on silicon carbide full-bridge inversion type double parallel inverters

Abstract

The utility model relates to the field of inverter welding machines, in particular to a high-power-density welding machine power supply based on silicon carbide full-bridge inverter type double parallel inverters, which comprises a rear panel component, an upper connecting plate component, a first silicon carbide inverter component, a second silicon carbide inverter component, a front panel component and a bottom plate component. The rear panel part comprises an input switch and a cooling fan; the upper connecting plate component comprises an auxiliary power transformer, a main control board, a driving board and a rectifying and filtering device; the first silicon carbide inverter assembly comprises a first silicon carbide inverter plate, a radiator, a first high-frequency transformer, a secondary rectifying plate and a radiator; the second silicon carbide inverter assembly comprises a second silicon carbide inverter plate, a radiator, a second high-frequency transformer, a secondary rectifying plate and a radiator. Based on the innovation and change, the size and the weight of the power supply of the high-power output inverter welding machine can be greatly reduced, high power density is achieved, the production cost is reduced, and the use requirement of market portability is met.

Description

Technical Field

[0001] The utility model relates to the field of inverter welding machines, in particular to a high power density inverter welding machine based on a silicon carbide full-bridge inverter dual parallel inverter. Background Art

[0002] The research on inverter welding power supply in my country started in the 1970s and began to develop in the 1980s. Over the past 50 years, it has gone through 4 generations of products: the first generation is an inverter power supply with thyristor SCR as the main power device; the second generation is a transistor inverter power supply; the third generation is a field effect transistor inverter power supply; the fourth generation is an IGBT inverter power supply; the early inverter welding machine used fast thyristors as power devices, and the weight of a 500A welding machine was about 80~90 kilograms. Later, with the emergence of IGBT, medium and large power inverter welding machines used IGBT as inverter power devices, and the weight of a 500A welding machine has become about 40~50 kilograms, and the volume is about 1 / 2~1 / 3 of the original thyristor welding machine. However, with the development of society, in the field of mobile construction welding and cutting, it is generally required that the inverter welding and cutting power supply should be as light and small as possible under the same current and power output. Such market demand has posed a severe challenge to the design and development of inverter welding machines, and the fourth generation IGBT inverter power supply has been difficult to meet this demand.

[0003] Silicon carbide (SiC) is a compound semiconductor material composed of silicon (Si) and carbon (C). It has a very strong bonding force and is very stable in terms of heat, chemistry and mechanics. The third-generation semiconductor high-power power electronic devices represented by SiC are currently one of the fastest-growing power semiconductor devices in the field of power electronics. As a typical representative of the third-generation semiconductor materials, silicon carbide is also one of the wide-bandgap semiconductor materials with the most mature crystal production technology and device manufacturing level and the most widely used. At present, a global material, device and application industry chain has been formed. Compared with Si materials, the main advantages of SiC are: ① SiC has a bandgap width three times that of S, which can reduce leakage and increase the tolerance temperature; ② SiC has a breakdown field strength 10 times that of Si, which can increase current density, operating frequency, withstand voltage capacity and reduce conduction loss, and is more suitable for high-voltage applications; ③ SiC has an electron saturation drift velocity twice that of Si, so the operating frequency is higher; ④ SiC has a thermal conductivity three times that of Si, better heat dissipation performance, can support high power density and reduce heat dissipation requirements, making the device lighter. Therefore, SiC materials have obvious material performance advantages. At present, SiC has begun to be used in new energy vehicles, photovoltaic inverters, energy storage and other industries, but it has not yet been put into practical use in the field of inverter welding power supply. Utility Model Content

[0004] In view of the problem that the volume and weight of the fourth-generation IGBT inverter welding power supply for medium and high-power welding and cutting equipment cannot be reduced, the utility model provides a high-power density inverter welding machine power supply design based on silicon carbide full-bridge inverter dual parallel inverter, which effectively solves the above needs. The weight of a 500A welding machine has reached about 20 kilograms, and the volume is about 1 / 3 of the fourth-generation IGBT inverter welding machine. The power density of the welding machine power supply has reached a new height, providing a very good solution for the portability of medium and high-power welding and cutting equipment.

[0005] To achieve the above purpose, the utility model is implemented through the following scheme: a high power density inverter welding machine power supply based on a silicon carbide full-bridge inverter dual parallel inverter, including a rear panel component, an upper connecting plate component, a first silicon carbide inverter component, a second silicon carbide inverter component, a front panel component and a bottom plate component; wherein the rear panel component includes an input switch and a heat dissipation fan; the upper connecting plate component includes an auxiliary power transformer, a main control board, a drive board and a rectifier filter device; the first silicon carbide inverter component includes: a first silicon carbide inverter board and a first silicon carbide inverter board radiator, a first high-frequency transformer, a first secondary rectifier board and a first secondary rectifier board radiator; the second silicon carbide inverter component includes: a second silicon carbide inverter board and a second silicon carbide inverter board radiator, a second high-frequency transformer, a second secondary rectifier board and a second secondary rectifier board radiator; the front panel component includes: a display panel, a first output quick plug, a second output quick plug and a current feedback device; the bottom plate component includes: a reactor and a DC bus filter capacitor.

[0006] As a preferred embodiment, the first silicon carbide inverter component and the second silicon carbide inverter component are symmetrically arranged on both sides of the power supply housing, and the inside of the power supply housing is arranged from back to front in sequence: the silicon carbide inverter and its first silicon carbide inverter board radiator, the secondary rectifier board and its first and second rectifier board radiators, the high-frequency main transformer, and the reactor, and the first silicon carbide inverter component and the second silicon carbide inverter component are connected in parallel.

[0007] As a preferred implementation, the first silicon carbide inverter component and the second silicon carbide inverter component are both composed of silicon carbide devices, and both contain silicon carbide discrete devices to form a full-bridge inverter circuit.

[0008] As a preferred embodiment, the reactor is wound in a single-core double-winding manner, the winding directions are reversed, and the magnetic core is any one of an E-type silicon steel sheet, a C-type silicon steel sheet or a CD-type ferrite core.

[0009] As a preferred implementation, the first high-frequency transformer and the second high-frequency transformer are transformers made based on power ferrite magnetic rings.

[0010] As a preferred embodiment, the input end of the power transformer is connected to the main control board through a power supply line, the input of the rectifier and filter device is connected to the input power, and the output is connected to the DC bus filter capacitor of the base plate component; the drive board functions to provide drive signals for the first silicon carbide inverter component and the second silicon carbide inverter component.

[0011] As a preferred implementation manner, the heat sinks of the first silicon carbide inverter assembly and the second silicon carbide inverter assembly and the heat sinks of the first secondary rectifier board and the second secondary rectifier board are connected via an insulating epoxy resin board.

[0012] Compared with the known public technology, the technical solution provided by the utility model has the following beneficial effects:

[0013] The utility model adopts silicon carbide devices as the core of the inverter. Due to the characteristics of silicon carbide devices, the loss is very low and the corresponding heat generation is also relatively low. When the output power is the same, the requirement for the volume of the radiator is low. Therefore, under the same power output, the volume of the inverter can be relatively small.

[0014] The utility model adopts a dual inverter parallel connection technology. Inverter assembly 1 and inverter assembly 2 are designed in parallel. Each group of inverters only bears half of the output current power. For each group of inverters, the power is halved, and the loss and heat generation are reduced accordingly. The requirements for heat dissipation can also be further reduced. By using this inverter parallel connection technology, the volume of the product can be further reduced.

[0015] The utility model can reduce the weight of an inverter welding machine with a power output of 500A to 20 kg, and reduce the volume to 1 / 3 of a conventional IGBT inverter welding machine with the same power, and the improvement effect is very considerable. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] In order to more clearly illustrate the embodiments of the utility model or the technical solutions in the prior art, the drawings required for use in the embodiments or the prior art descriptions are briefly introduced below. Obviously, the drawings described below are only some embodiments of the utility model, and for ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0017] Figure 1 It is an exploded diagram of a high power density welding machine power supply based on a silicon carbide full-bridge inverter dual parallel inverter of the utility model;

[0018] Figure 2 It is a schematic diagram of a high power density welding machine power supply based on a silicon carbide full-bridge inverter dual parallel inverter of the utility model;

[0019] Figure 3It is a top view schematic diagram of a high power density welding machine power supply based on a silicon carbide full-bridge inverter dual parallel inverter of the present utility model;

[0020] Figure 4 It is a side view schematic diagram of a high power density welding machine power supply based on a silicon carbide full-bridge inverter dual parallel inverter of the utility model;

[0021] Figure 5 It is a front view schematic diagram of a high power density welding machine power supply based on a silicon carbide full-bridge inverter dual parallel inverter of the utility model;

[0022] Figure 6 It is a rear view schematic diagram of a high power density welding machine power supply based on a silicon carbide full-bridge inverter dual parallel inverter of the utility model;

[0023] Figure 7 This is a main circuit principle block diagram of a high power density welding machine power supply based on a silicon carbide full-bridge inverter dual parallel inverter of the utility model;

[0024] Figure 8 The reactor principle diagram and structure diagram of the high power density welding machine power supply based on the silicon carbide full-bridge inverter dual parallel inverter of the utility model;

[0025] Among them: 1-rear panel component; 2-upper connecting board component; 3-first silicon carbide inverter component; 4-second silicon carbide inverter component; 5-front panel component; 6-bottom plate component; 7-input switch; 8-cooling fan; 9-auxiliary power transformer; 10-main control board; 11-drive board; 12-rectifier and filter device; 13-first silicon carbide inverter board; 14-first silicon carbide inverter board radiator; 15-first high-frequency transformer; 16-first and second rectifier Flow plate; 17-first and second rectifier plate heat sink; 18-second silicon carbide inverter board; 19-second silicon carbide inverter board heat sink; 20-high frequency voltage device 2; 21-second and second rectifier plates; 22-second and second rectifier plate heat sink; 23-display panel; 24-first output quick plug; 25-second output quick plug; 26-current feedback device; 27-reactor; 28-DC bus filter capacitor; 29-epoxy resin board; 30-air duct isolation plate. DETAILED DESCRIPTION

[0026] In order to make the purpose, technical solution and advantages of the embodiment of the utility model clearer, the technical solution in the embodiment of the utility model will be clearly and completely described below in conjunction with the drawings in the embodiment of the utility model. Obviously, the described embodiment is a part of the embodiment of the utility model, not all of the embodiments. Based on the embodiment of the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0027] The utility model is further described below in conjunction with embodiments.

[0028] This embodiment is a high power density welding machine power supply based on a silicon carbide full-bridge inverter dual parallel inverter, such as Figure 1 , Figure 2 As shown, it includes a rear panel component 1, an upper connecting plate component 2, a first silicon carbide inverter component 3, a second silicon carbide inverter component 4, a front panel component 5, and a bottom plate component 6.

[0029] The rear panel components include an input switch 7 and a heat dissipation fan 8 .

[0030] The upper connecting board components include an auxiliary power transformer 9, a main control board 10, a driving board 11, and a rectifying and filtering device 12.

[0031] The first silicon carbide inverter assembly includes: a first silicon carbide inverter board 13 and a first silicon carbide inverter board radiator 14 , a first high-frequency transformer 15 , a first secondary rectifier board 16 and a first secondary rectifier board radiator 17 .

[0032] The second silicon carbide inverter assembly includes: a second silicon carbide inverter board 18 and a second silicon carbide inverter board radiator 19 , a second high-frequency transformer 20 , a second secondary rectifier board 21 and a second secondary rectifier board radiator 22 .

[0033] The front panel components include: a display panel 23 , a first output quick plug 24 , a second output quick plug 25 , and a current feedback device 26 .

[0034] The bottom plate components include: a reactor 27 and a DC bus filter capacitor 28 .

[0035] like Figure 7 As shown, a high power density welding machine power supply based on a silicon carbide full-bridge inverter dual parallel inverter in this embodiment adopts the inverter parallel technology in the main circuit structure, inputs the power supply line, passes through the input switch, and is connected to the rectifier filter device. The output of the rectifier filter device is connected to the DC bus filter capacitor, and the filter capacitor is simultaneously connected in parallel to the first silicon carbide inverter board and the second silicon carbide inverter board. The output of the first silicon carbide inverter assembly is connected to the first high-frequency transformer, the output of the first high-frequency transformer is connected to the first secondary rectifier board, and the output of the first and second rectifier boards is connected to the reactor. Similarly, the output of the second silicon carbide inverter assembly is connected to the second high-frequency transformer, the output of the second high-frequency transformer is connected to the second secondary rectifier board, and the output of the second secondary rectifier board is connected to the reactor. The output end of the reactor is connected to the first output plug, and the parallel output of the first high-frequency transformer and the second high-frequency transformer is connected to one end of the current feedback device, and the other end of the current feedback device is connected to the second output plug.

[0036] like Figure 3As shown, in this embodiment, a high power density welding machine power supply based on a silicon carbide full-bridge inverter dual parallel inverter, the input end of the power transformer 9 is connected to the power supply line, and the input end is connected to the main control board 10 to provide auxiliary power for the main control board. The input of the rectifier filter device 12 is connected to the input power, and the output is connected to the DC bus filter capacitor 28 of the bottom plate component. The function of the drive board 11 is to provide drive signals for the silicon carbide inverter 1 and the silicon carbide inverter 2.

[0037] like Figure 4 As shown, the first silicon carbide inverter assembly 3 and the second silicon carbide inverter assembly 4 are symmetrically arranged on both sides of the power supply housing. From back to front, they are the silicon carbide inverter 13 and its heat sink 14, the secondary rectifier board 16 and its heat sink 17, the high-frequency main transformer 15, and the reactor 27. The silicon carbide inverter 1 and the silicon carbide inverter 2 are composed of silicon carbide devices, including 4 silicon carbide discrete devices, forming a full-bridge inverter circuit. The high-frequency voltage device 1 and the high-frequency voltage device 2 are transformers based on power ferrite magnetic rings, which can operate at a working frequency of 100KHz and above. The first secondary rectifier board and the second secondary rectifier board are composed of fast recovery diode discrete devices welded in parallel, which can achieve high current rectification output. The radiator of the silicon carbide inverter and the radiator of the secondary rectifier board are connected by an insulating epoxy resin plate 29, and then firmly connected to the sheet metal through the air duct isolation plate 30. The reactor 27 shown is wound in a single-core double-winding manner, and its electrical principle is as follows: Figure 8 As shown, the winding direction is reversed to achieve the purpose of magnetic field enhancement. The magnetic core can be an E-type / C-type silicon steel sheet or a CD-type ferrite core.

[0038] like Figure 5 As shown, the display panel 23 includes a current adjustment potentiometer, a voltage adjustment potentiometer, an inductance adjustment potentiometer, a current display meter, a voltage display meter, and various function buttons and indicator lights. The display panel includes necessary adjustment and display functions. The current feedback device 26 shown is a shunt, which is used for output current detection and feedback. It is connected to the main control board to achieve the purpose of output current control.

[0039] like Figure 6 As shown, the rear panel includes a switch 7 and a heat dissipation fan 8.

[0040] In this embodiment, because silicon carbide devices are used as the core of the inverter, due to the characteristics of silicon carbide devices, the loss is very low, and the corresponding heat generation is also relatively low. When the output power is the same, the requirement for the volume of the heat sink is low. Therefore, under the same power output, the volume of the inverter can be relatively small. Also, because the utility model adopts dual inverter parallel technology, inverter assembly 1 and inverter assembly 2 adopt a parallel design, and each group of inverters only bears half of the output current power, for each group of inverters, the power is halved, and the loss and heat generation are correspondingly reduced, which can also further reduce the requirements for heat dissipation. By using this inverter parallel technology, the volume of the product can be further reduced.

[0041] This embodiment can reduce the weight of an inverter welding machine with a power output of 500A to 20 kg, and reduce the volume to 1 / 3 of a conventional IGBT inverter welding machine with the same power. It has been verified in the market and the feedback effect is very good.

[0042] The above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that the technical solutions described in the aforementioned embodiments may still be modified, or some of the technical features may be replaced by equivalents. Such modifications or replacements will not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A high power density welding power supply based on silicon carbide full-bridge inverter dual parallel inverter, characterized in that: It comprises a rear panel component (1), an upper connecting plate component (2), a first silicon carbide inverter component (3), a second silicon carbide inverter component (4), a front panel component (5) and a bottom plate component (6); Wherein, the rear panel component (1) comprises an input switch (7) and a heat dissipation fan (8); The upper connecting plate component (2) comprises an auxiliary power transformer (9), a main control board (10), a drive board (11) and a rectifier and filter device (12); The first silicon carbide inverter assembly (3) comprises: a first silicon carbide inverter board (13) and a first silicon carbide inverter board radiator (14), a first high-frequency transformer (15), a first secondary rectifier board (16) and a first secondary rectifier board radiator (17); The second silicon carbide inverter assembly (4) comprises: a second silicon carbide inverter board (18) and a second silicon carbide inverter board radiator (19), a second high-frequency transformer (20), a second secondary rectifier board (21) and a second secondary rectifier board radiator (22); The front panel component comprises: a display panel (23), a first output quick plug (24), a second output quick plug (25) and a current feedback device (26); The bottom plate component comprises: a reactor (27) and a DC bus filter capacitor (28).

2. The high power density welding machine power supply based on silicon carbide full-bridge inverter dual parallel inverter according to claim 1 is characterized in that: The first silicon carbide inverter assembly (3) and the second silicon carbide inverter assembly (4) are symmetrically arranged on both sides of a power supply housing, and the inside of the power supply housing is arranged from back to front in sequence: a first silicon carbide inverter board (13) and its first silicon carbide inverter board radiator (14), a secondary rectifier board (16) and its first secondary rectifier board radiator (17), a first high-frequency transformer (15), and a reactor (27); the first silicon carbide inverter assembly (3) and the second silicon carbide inverter assembly (4) are connected in parallel.

3. The high power density welding machine power supply based on silicon carbide full-bridge inverter dual parallel inverter according to claim 1 is characterized in that: The first silicon carbide inverter component (3) and the second silicon carbide inverter component (4) are both composed of silicon carbide devices, and both contain four silicon carbide discrete devices to form a full-bridge inverter circuit.

4. The high power density welding machine power supply based on silicon carbide full-bridge inverter dual parallel inverter according to claim 1 is characterized in that: The reactor (27) is wound in a single-core double-winding manner, the winding directions are reversed, and the magnetic core is any one of an E-type silicon steel sheet, a C-type silicon steel sheet or a CD-type ferrite core.

5. The high power density welding machine power supply based on silicon carbide full-bridge inverter dual parallel inverter according to claim 1 is characterized in that: The first high-frequency transformer (15) and the second high-frequency transformer (20) are transformers made of power ferrite magnetic rings.

6. The high power density welding machine power supply based on silicon carbide full-bridge inverter dual parallel inverter according to claim 1 is characterized in that: The input end of the power transformer (9) is connected to the main control board (10) through a power supply line, the input of the rectifier filter device (12) is connected to the input power, and the output is connected to the DC bus filter capacitor (28) of the bottom plate component; the driving board (11) functions to provide driving signals for the first silicon carbide inverter component (3) and the second silicon carbide inverter component (4).

7. The high power density welding machine power supply based on silicon carbide full-bridge inverter dual parallel inverter according to claim 1 is characterized in that: The heat sinks of the first silicon carbide inverter assembly (3) and the second silicon carbide inverter assembly (4) and the heat sinks of the first secondary rectifier board (16) and the second secondary rectifier board (21) are connected via an insulating epoxy resin board (29).

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