Method for high resolution patterning using soft X-ray, process for preparing nano device using the method
a high-resolution pattern and soft x-ray technology, applied in the field of high-resolution patterning and the process of manufacturing a nano device using the high-resolution pattern, can solve the problems of inaccurate registration (1 m), process limitation of mass production, and difficulty in forming nano-scale high-resolution patterns using the method. achieve the effect of high resolution
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example 1
[0061] Initially, a cleaned silica substrate was dried in a vacuum of about 20 mtorr. A round-bottom flask was charged with a solution of (3-aminopropyl)diethoxymethylsilane in toluene (10−3M) under a nitrogen atmosphere. The dried silica substrate was immersed in that solution and reacted at room temperature for silylation.
[0062] After the silylation was completed, the substrate was washed with toluene, dried in an oven at 120° C. for 30 minutes, and cooled to room temperature. The cooled substrate was washed by ultrasonication in toluene, a solvent mixture of toluene and methanol in 1:1 by volume, and then methanol for 3 minutes each, and dried in a vacuum.
[0063] Next, the amino-silylated silica substrate was immersed in a solution of 20 mg of 4-nitrobenzaldehyde in 25 mL of ethanol for 6 hours in a nitrogen atmosphere for condensation. At this time, the reaction temperature was maintained at 50° C.
[0064] The substrate after the reaction was washed with excess methanol and by u...
example 2
[0068] A substrate with a pattern was manufactured in the same manner as in Example 1, except that a gold substrate instead of the silica substrate and 3-aminopropanethiol instead of the (3-aminopropyl)diethoxymethylsilane were used for amino-thiolation. A cleaned gold substrate was immersed in a solution of 3-aminopropanethiol in ethanol (10 mM) and reacted for 3 hours in a nitrogen atmosphere for the amino-thiolation. The substrate after the amino-thiolation was washed with an organic solvent and dried in a vacuum.
example 3
[0069] An aromatic imine molecular layer was formed on the substrate in the same manner as in Example 1, except that 4-nitrocinnamaldehyde instead of the 4-nitrobenzaldehyde was used. In patterning, soft X-rays of 500 eV were radiated onto the substrate for 4.5 hours until 80% of the nitro group was removed from the terminal ring in the aromatic imine molecular layer. Hydrolysis was carried out according to Example 1.
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