Electronic device, method for manufacturing the same, and silicon substrate for electronic device

a technology of electronic devices and silicon substrates, applied in the direction of radiation controlled devices, semiconductor devices, electrical apparatus, etc., can solve the problems of loss of sensitivity, inability to achieve high precision alignment, and inconvenient light, etc., and achieve the effect of high precision

Inactive Publication Date: 2010-12-23
UYA SHINJI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This approach enables high-precision alignment of front-surface and back-surface elements, reducing color mixture and enhancing sensitivity by allowing for the formation of narrow light-shielding elements, thus improving the quality and performance of electronic devices, particularly in back-illuminated solid-state imaging devices.

Problems solved by technology

Accordingly, the near-infrared light is not suitable for a thick Si-layer structure, and aligning with high precision cannot be achieved.
As a width of the light-shielding element is increased, the color-mixture margin between two adjacent colors is also increased accordingly, but it means openings are narrowed as the color-mixture margin is increased, causing loss of sensitivity.

Method used

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  • Electronic device, method for manufacturing the same, and silicon substrate for electronic device
  • Electronic device, method for manufacturing the same, and silicon substrate for electronic device
  • Electronic device, method for manufacturing the same, and silicon substrate for electronic device

Examples

Experimental program
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Embodiment Construction

[0030]Hereinafter, embodiments of the invention will be described with reference to the drawings.

[0031]FIG. 1 is a sectional schematic view of a back-illuminated solid-state imaging element 100 according to an embodiment of the invention. The solid-state imaging element according to the embodiment is an interline type CCD. Vertical charge transfer paths (VCCD) 21 and photodiodes (photoelectric conversion elements) 22 are formed on a front-surface side of a p type semiconductor substrate 1. A color filter (red (R), green (G) and blue (B)) layer 23 and micro lenses 24 are laminated on a back-surface side thereof.

[0032]The back-illuminated solid-state imaging element 100 according to the embodiment is a CCD type. However, the invention is applicable to a CMOS type solid-state imaging element or other solid-state imaging elements in the same manner as described in Japanese Patent No. 3722367.

[0033]A high-concentration p layer 25 is formed on a surface of the semiconductor substrate 1 on...

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Abstract

An electronic device is formed by epitaxially growing a Si substrate on a Si layer of an SOI substrate in which the Si layer is deposited on a front surface of a substrate with an insulating layer interposed therebetween; forming an element on a front-surface side of the Si substrate; and forming a back-surface element aligned with respect to the element, on a back-surface side of the Si substrate after the substrate is etched. A mark is formed by etching and removing the Si layer and the insulating layer in a predetermined position of the SOI substrate. The element is formed using a concave part as a reference position. The concave part appears on the front surface of the Si substrate epitaxially grown on the mark. The back-surface element is formed using the mark as a reference position. The mark appears after the substrate is etched.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application is a Divisional of co-pending application Ser. No. 12 / 032,390, filed on Feb. 15, 2008, which claims priority to Application No. 2007-37881 filed in Japan on Feb. 19, 2007, the entire contents of which are hereby incorporated by reference into the present application and for which priority is claimed under 35 U.S.C. §120.BACKGROUND OF THE INVENTION[0002]1. Technical Field[0003]The invention relates to a silicon (Si) substrate or the like for manufacturing an electronic device, and more particularly to an electronic device that is manufactured by aligning elements formed on a front surface thereof and elements formed on a back surface thereof with high precision, a manufacturing method thereof, and a silicon substrate for the electronic device.[0004]2. Description of the Related Art[0005]When an electronic device is manufactured on a silicon substrate, there is a case where elements are formed on both a front surface and a ...

Claims

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Application Information

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Patent Type & AuthorityApplications(United States)
IPC IPC(8): H01L31/02H01L21/50
CPCH01L21/84H01L27/0694H01L27/12H01L27/14621H01L27/14627Y10S438/975H01L27/14687H01L27/14812H01L27/14843H01L27/1464H01L27/1463
InventorUYA, SHINJI
OwnerUYA SHINJI