Semiconductor apparatus

a technology of semiconductor apparatus and shielding device, which is applied in the direction of emergency protective circuit arrangement, electrical apparatus, etc., can solve the problems of semiconductor apparatus malfunction and problem may become prominen

Active Publication Date: 2014-01-21
SEMICON COMPONENTS IND LLC
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0009]In the ESD protection circuit as described above, the NMOS transistor is OFF at the time of energization while a power supply voltage is applied to the semiconductor apparatus, so that a malfunction is prevented. However, when the power supply voltage is not stable and changes, the NMOS transistor may be turned on as is the case with the ESD surge depending on a relationship between the abruptness of such a voltage change and the time constant of the resistor and the capacitor.

Problems solved by technology

Therefore, the instantaneous change of the power supply voltage caused by noise, etc., may cause a malfunction of the semiconductor apparatus.
Especially, in the case of a power supply IC for supplying power to other circuits, this problem may become prominent since stable power may not be supplied.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0019]At least the following details will become apparent from descriptions of this specification and of the accompanying drawings.

==Configuration of Semiconductor Apparatus==

[0020]A description will hereinafter be given of a configuration of a semiconductor apparatus including an ESD protection circuit according to an embodiment of the present invention, with reference to FIG. 1.

[0021]A semiconductor apparatus 1a depicted in FIG. 1 is provided with terminals 41 to 43 and includes diodes 11, 12, a resistor 13, a capacitor 14, an NMOS transistor 15, a switch circuit 21, and an internal circuit 30.

[0022]The terminals 41 and 42 are a pair of power supply terminals to be applied with a power supply voltage and, for example, the terminals 41 and 42 correspond to a first power supply terminal and a second power supply terminal, respectively, for example. The terminal 43 is an input / output terminal for inputting / outputting signals. In the following description, it is assumed that a power v...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A semiconductor apparatus includes: first and second power-supply terminals; an internal circuit connected between the first and second power-supply terminals; and a protection circuit connected in parallel with the internal circuit between the first and second power-supply terminals, the protection circuit including: a series circuit that includes a resistor and a first capacitor, and is connected in parallel with the internal circuit between the first and second power-supply terminals; a first MOS transistor that is connected in parallel with the series circuit, and is controlled according to a voltage at a connection point between the resistor and the first capacitor; and a switch circuit that is connected in parallel with the resistor, is turned on in a delayed manner after a power-supply voltage is applied between the first and second power-supply terminals, and changes the voltage at the connection point so that the first MOS transistor is turned off.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]This application claims the benefit of priority to Japanese Patent Application No. 2009-273810, filed Dec. 1, 2009, of which full contents are incorporated herein by reference.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]The present invention relates to a semiconductor apparatus.[0004]2. Description of the Related Art[0005]A semiconductor apparatus such as an IC (Integrated Circuit) or an LSI (Large-Scale Integration) generally provided with an ESD protection circuit on the inside thereof and the outside thereof in order to prevent breakdown caused by ESD (Electro-Static Discharge). Especially, the ESD protection circuit provided on the inside of the semiconductor apparatus is mainly intended for prevention of ESD breakdown during handling before the semiconductor apparatus is mounted onto a circuit board.[0006]For example, FIG. 13 of Japanese Laid-Open Patent Publication No. 2005-93496 discloses an ESD protection circui...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & AuthorityPatents(United States)
IPC IPC(8): H02H9/00
InventorAKAI, KAZUMASANAKAHATA, MASAHIRO
OwnerSEMICON COMPONENTS IND LLC