Composite insulator and manufacturing method thereof, composite bushing

Abstract

The present invention discloses a composite insulator, comprising an insulating tube and an shed wrapped on the outside of the insulating tube, wherein the insulating tube comprises a first winding layer, a first semiconductor material layer and a second winding layer, wherein the first winding layer is away from the shed, and the first semiconductor material layer is located between the first winding layer and the second winding layer and located on a partial cross section outside the first winding layer. The present invention also discloses a method for manufacturing a composite insulator and a composite bushing. In this way, by arranging a semiconductor material layer inside the insulating tube, it is possible to improve the interference of the electric field on the composite insulator, improve the local electric field distribution, alleviate the electric field concentration, avoid discharge on the shed surface and electrical corrosion, and avoid the life of the insulating tube from decreasing after long-term use. The composite insulator can be applied to post insulators, composite bushings or other high-voltage power equipment.

Description

Technical Field

[0001] The present invention relates to the technical field of power transmission external insulation, and more specifically to a composite insulator and a manufacturing method thereof, and a composite bushing. Background Art

[0002] At present, composite bushings widely used in high-voltage equipment such as GIS, H-GIS, DCB, PASS, and COMPASS in power systems mostly adopt a gas-filled (SF6) bushing structure. The composite bushing includes a composite insulator and an internal central conductor, the composite insulator includes a glass fiber reinforced plastic insulation tube and an outer silicone rubber shed, the central conductor is fixed to the upper and lower flanges at both ends of the glass fiber reinforced plastic insulation tube, the outer side of the upper flange is provided with a terminal and has a high potential, one end of the lower flange is in contact with the casing of the high-voltage equipment, and is the shielding part close to the ground, the lower part of the composite bushing is connected to the high-voltage equipment, and the electric field distribution between the central conductor and the glass fiber reinforced plastic insulation tube is improved by the grounding shielding electrode, but the electric field concentration is easy to generate at the end of the grounding shielding electrode, and the corresponding silicone rubber shed surface is easy to generate discharge and thus be corroded, and the insulation life of the glass fiber reinforced plastic insulation tube is reduced under high field strength for a long time; at the same time, in order to meet a certain electric field concentration intensity and prevent the damage of the glass fiber reinforced plastic insulation tube during long-term use, the glass fiber reinforced plastic insulation tube needs to have a larger inner diameter and wall thickness, and the material loss is large, which is not conducive to cost reduction. Summary of the invention

[0003] The object of the present invention is to provide a composite insulator and a manufacturing method thereof, and a composite bushing, which can solve the problems of electric field interference on the composite insulator, electrical corrosion of the shed and reduced service life of the insulating tube, and can also solve the problems of larger inner diameter and thicker tube wall when the composite insulator is used in the composite bushing.

[0004] To achieve the above-mentioned purpose, a technical solution adopted by the present invention is as follows: a composite insulator is provided, comprising an insulating tube and an shed wrapped around the outside of the insulating tube, the insulating tube comprising a first winding layer, a first semiconductor material layer and a second winding layer, the first winding layer is away from the shed, the first semiconductor material layer is located between the first winding layer and the second winding layer and is located on a partial cross-section outside the first winding layer.

[0005] In this way, a semiconductor material layer is arranged inside the insulating tube, which can improve the interference of the electric field on the composite insulator, improve the local electric field distribution, alleviate the electric field concentration, avoid discharge and electrocorrosion on the surface of the umbrella skirt, and avoid the reduction of the life of the insulating tube after long-term use. The composite insulator can be used in post insulators, composite bushings or other high-voltage power equipment.

[0006] The first semiconductor material layer is formed by brushing the semiconductor coating on the first winding layer.

[0007] A first semiconductor material layer with a certain thickness is formed on a partial cross-section of the first winding layer by brushing. The process is relatively simple, and the interface connection between the semiconductor coating and the first winding layer and the second winding layer is tighter, avoiding the interface separation problem.

[0008] Wherein, the semiconductor coating is a semiconductor silicone rubber coating containing conductive fillers.

[0009] The use of semiconductor silicone rubber coating containing conductive fillers can better affect the electric field distribution and improve the electric field concentration phenomenon.

[0010] The first semiconductor material layer is formed by winding the semiconductor fiber yarn on the first winding layer.

[0011] The first semiconductor material layer is formed by winding the semiconductor fiber yarn, which is similar to the process of the original winding layer and is easy to realize industrial production automation.

[0012] The first winding layer and the second winding layer are both formed by winding glass fiber yarn impregnated with a matrix material.

[0013] The insulating tube further comprises a second semiconductor material layer, and the second semiconductor material layer is located on a partial cross section inside the first winding layer, or on a partial cross section outside the second winding layer.

[0014] By adding a second semiconductor material layer on a partial cross section of the inner or outer side of the insulating tube, factors interfering with the electric field distribution are provided at different thicknesses of the insulating tube, which can further avoid electric field concentration and further improve the mitigation effect.

[0015] The second semiconductor material layer is arranged on a partial cross section outside the second winding layer, which can avoid corrosion of the insulating tube caused by corona discharge of gas filled in the insulating tube, such as SF6 gas, to a certain extent.

[0016] The first semiconductor material layer and the second semiconductor material layer have different resistivities.

[0017] By providing the first semiconductor material layer and the second semiconductor material layer with different resistivities, an optimized combination can be performed according to actual conditions, thereby achieving greater practicality and a wider range of adaptability.

[0018] The first semiconductor material layer and the second semiconductor material layer have the same thickness, and the first semiconductor material layer and the second semiconductor material layer have different widths.

[0019] To achieve the above object, another technical solution provided by the present invention is: to provide a method for manufacturing a composite insulator, comprising:

[0020] Providing a core mold;

[0021] forming a first winding layer on the core mold;

[0022] forming a first semiconductor material layer on a partial cross section outside the first winding layer;

[0023] forming a second winding layer on the first winding layer and the first semiconductor material layer to form an insulating tube;

[0024] The outer side of the insulating tube is covered to form an umbrella skirt.

[0025] In this way, a semiconductor material layer is arranged inside the insulating tube, which can improve the interference of the electric field on the composite insulator, improve the local electric field distribution, alleviate the electric field concentration, avoid discharge and electrocorrosion on the surface of the umbrella skirt, and avoid the reduction of the life of the insulating tube after long-term use. The composite insulator can be used in post insulators, composite bushings or other high-voltage power equipment.

[0026] The step of forming the first semiconductor material layer on a partial cross section outside the first winding layer includes:

[0027] A semiconductor coating is applied on a partial cross section of the outer side of the first winding layer to form a first semiconductor material layer.

[0028] The step of forming the first semiconductor material layer on a partial cross section outside the first winding layer includes:

[0029] The semiconductor fiber yarn is wound on a partial cross section outside the first wound layer to form a first semiconductor material layer.

[0030] The step of forming the first winding layer on the core mold includes:

[0031] forming a second semiconductor material layer on the core mold;

[0032] A first winding layer is formed on the core mold and the second semiconductor material layer.

[0033] Wherein, after the step of forming the second winding layer on the first winding layer and the first semiconductor material layer, the method further comprises:

[0034] A second semiconductor material layer is formed on a partial cross section of the outer side of the second wound layer.

[0035] To achieve the above object, another technical solution provided by the present invention is: to provide a composite bushing, comprising the above composite insulator.

[0036] The composite casing further includes a grounded shielding electrode, and the first semiconductor material layer corresponds to the position of the grounded shielding electrode.

[0037] The composite insulator is applied to the composite bushing to improve the electric field distribution near the ground shielding electrode, alleviate the electric field concentration, avoid the electro-corrosion phenomenon on the surface of the shed, extend the service life of the insulating tube, and make the composite bushing more resistant to the electric field. Therefore, under the same voltage level, compared with the traditional composite bushing, the inner diameter of the pipe wall of the composite insulator of the composite bushing can be reduced, and the pipe wall thickness can also be reduced, thereby further reducing the production cost. The composite insulator is applied to the composite bushing, and in some applications, the setting of the ground shielding electrode can be eliminated, making the composite bushing structure more compact and miniaturized. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] Figure 1 is a schematic cross-sectional structural diagram of a first embodiment of a composite insulator of the present invention;

[0039] Figure 2 is a schematic cross-sectional structural diagram of a second embodiment of a composite insulator of the present invention;

[0040] Figure 3 is a schematic cross-sectional structural diagram of a third embodiment of a composite insulator of the present invention;

[0041] Figure 4 is a schematic cross-sectional structural diagram of a fourth embodiment of a composite insulator of the present invention;

[0042] Figure 5 It is a schematic flow chart of a first embodiment of a method for manufacturing a composite insulator of the present invention;

[0043] Figure 6 It is a schematic flow chart of a second embodiment of a method for manufacturing a composite insulator of the present invention;

[0044] Figure 7 It is a schematic flow chart of a third embodiment of a method for manufacturing a composite insulator of the present invention;

[0045] Figure 8 It is a schematic cross-sectional structure diagram of a specific embodiment of the composite casing of the present invention. DETAILED DESCRIPTION

[0046] Upon request, specific embodiments of the present invention will be disclosed herein. However, it should be understood that the embodiments disclosed herein are merely typical examples of the present invention, which may be embodied in various forms. Therefore, the specific details disclosed herein are not to be considered restrictive, but merely as a basis for the claims and as a representative basis for teaching those skilled in the art to apply the present invention in various ways in any appropriate manner in practice, including using the various features disclosed herein and in combination with features that may not be explicitly disclosed herein.

[0047] like Figure 1As shown, an embodiment of a composite insulator of the present invention comprises an insulating tube 104 and an shed 105 wrapped around the outside of the insulating tube 104, wherein the insulating tube 104 comprises a winding layer 102, a semiconductor material layer 103 and a winding layer 101, wherein the winding layer 102 is away from the shed 105, and the semiconductor material layer 103 is located between the winding layer 102 and the winding layer 101 and on a partial cross section outside the winding layer 102.

[0048] Specifically, an outer side of the composite insulator 10 is provided with an shed 105 , which can generally be a silicone rubber shed 105 , and the silicone rubber shed 105 is integrally injection-molded on the outer side of the insulating tube 104 .

[0049] A layered structure is arranged inside the insulating tube 104, including a winding layer 102 and a winding layer 101. Relative to the cross-sectional area of ​​the entire outer surface of the winding layer 102, the semiconductor material layer 103 is arranged at the electric field concentration point, usually wrapping around the outer circumference of the winding layer 102. The cross-sectional area of ​​the semiconductor material layer 103 is much smaller than the cross-sectional area of ​​the entire outer surface of the winding layer 102, that is, it is located on a partial cross-section on the outside of the winding layer 102.

[0050] The winding layer 101 is located on the outside of the winding layer 102 and the semiconductor material layer 103. A part of the winding layer 101 is in direct contact with the winding layer 102, and another part is in direct contact with the semiconductor material layer 103. The semiconductor material layer 103 has good interface bonding with the winding layer 102 and the winding layer 101. The semiconductor material layer 103 has a certain thickness and width. The order of magnitude of the thickness and width can be selected according to actual conditions by comprehensively considering factors such as material properties, electric field strength, and interface bonding.

[0051] In this embodiment, both the winding layer 102 and the winding layer 101 are formed by winding glass fiber yarn impregnated with a matrix material.

[0052] The matrix material can be epoxy resin, vinyl ester resin, or polyurethane resin. In this embodiment, the matrix material is epoxy resin. During the molding process of the winding layer 102 and the winding layer 101, the epoxy resin glue and the glass fiber yarn undergo a series of physical and chemical changes to form an epoxy resin cured product. The epoxy resin cured product forms an interface layer with excellent structure and performance between the epoxy resin glue and the glass fiber yarn. The interface layer combines the glass fiber yarn and the epoxy resin glue into a whole, so that the winding layer made of the epoxy resin and the glass fiber yarn has good mechanical and electrical properties.

[0053] In a specific example of the present embodiment, the semiconductor material layer 103 may be formed by brushing a semiconductor coating on the winding layer 102 , and the semiconductor coating is a semiconductor silicone rubber coating containing a conductive filler.

[0054] The semiconductor silicone rubber coating 103 containing conductive fillers has a base material composed mainly of silicone rubber, and conductive fillers are added to give it semiconductor properties. A semiconductor material layer 103 with a certain thickness is formed on a partial cross-section of the winding layer 102 by brushing. The process is relatively simple, and the interface between the semiconductor silicone rubber coating 103 and the glass fiber yarn impregnated with epoxy resin is tightly connected to avoid interface separation problems.

[0055] In another specific example of this embodiment, the semiconductor material layer 103 is formed by winding the semiconductor fiber yarn on the winding layer 102. The semiconductor fiber yarn can be impregnated in epoxy resin glue before winding, so that the winding layer 101 / 102 and the semiconductor material layer 103 are tightly combined. The semiconductor material layer 103 is formed by winding the semiconductor fiber yarn, which is similar to the process of the original winding layer 101 / 102, and it is easy to realize industrial production automation.

[0056] In this way, a semiconductor material layer 103 is provided inside the insulating tube 104, which can improve the interference of the electric field on the composite insulator 10, improve the local electric field distribution, alleviate the electric field concentration, avoid discharge and electrocorrosion on the surface of the umbrella skirt 105, and avoid the life of the insulating tube 104 decreasing after long-term use. The composite insulator 10 can be used in post insulators, composite bushings or other high-voltage power equipment.

[0057] like Figure 2 As shown, the second embodiment of the composite insulator of the present invention comprises an insulating tube 206 and an shed 205 wrapped on the outside of the insulating tube 206, the insulating tube 206 comprises a winding layer 201, a winding layer 202, a semiconductor material layer 203 and a semiconductor material layer 204, the winding layer 201 is away from the shed 205, the semiconductor material layer 203 is located between the winding layer 201 and the winding layer 202 and is located on a partial cross-section outside the winding layer 201, and the semiconductor material layer 204 is located on a partial cross-section outside the winding layer 202.

[0058] Specifically, the composite insulator 20 is provided with a shed 205 on the outside, which can be a silicone rubber shed 205. The silicone rubber shed 205 is integrally injection molded on the outside of the insulating tube 206. The winding layer 201 and the winding layer 202 are both formed by winding glass fiber yarn impregnated with a matrix material.

[0059] The semiconductor material layer 203 is disposed at the electric field concentration point, usually wrapping around the outer circumference of the winding layer 201. The cross-sectional area of ​​the semiconductor material layer 203 is much smaller than the cross-sectional area of ​​the entire outer surface of the winding layer 201, that is, it is located on a partial cross-section outside the winding layer 201.

[0060] The semiconductor material layer 204 is located between the winding layer 202 and the umbrella skirt 205. The position of the semiconductor material layer 204 corresponds to the position of the semiconductor material layer 203, so that there are factors that interfere with the electric field distribution at different thicknesses of the insulating tube 206, which can further avoid electric field concentration and further improve the mitigation effect.

[0061] The materials of the semiconductor material layer 203 and the semiconductor material layer 204 may be the same or different. For example, if the semiconductor material layer 203 is formed by brushing a semiconductor silicone rubber coating containing a conductive filler, the semiconductor material layer 204 may also be formed by brushing a semiconductor silicone rubber coating containing a conductive filler. Of course, the semiconductor material layer 204 may also be formed by other semiconductor coatings by brushing; if the semiconductor material layer 203 is formed by winding a semiconductor fiber yarn, the semiconductor material layer 204 may also be formed by winding a semiconductor fiber yarn.

[0062] In this embodiment, the semiconductor material layer 203 and the semiconductor material layer 204 have different resistivities, which can be specifically manifested as the semiconductor material layer 203 and the semiconductor material layer 204 have the same thickness and different widths.

[0063] By setting semiconductor material layers 203 and 204 with different resistivities, compared with setting a single semiconductor material layer, an optimized combination can be performed according to actual conditions, the adjustable electric field range is wider, the interference capability to the electric field is stronger, the practicability is stronger, and the adaptability is wider.

[0064] The semiconductor material layer 204 is arranged on a partial cross section outside the winding layer 202, which can avoid corrosion of the insulating tube 206 caused by corona discharge of the filling gas such as SF6 gas in the insulating tube 206 to a certain extent.

[0065] like Figure 3 As shown, the third embodiment of the composite insulator of the present invention includes an insulating tube 306 and an shed 305 wrapped on the outside of the insulating tube 306, the insulating tube 306 includes a winding layer 301, a winding layer 302, a semiconductor material layer 303 and a semiconductor material layer 304, the winding layer 301 is away from the shed 305, the semiconductor material layer 303 is located between the winding layer 301 and the winding layer 302 and is located on a partial cross-section on the outside of the winding layer 301, and the semiconductor material layer 304 is located on a partial cross-section on the inside of the winding layer 301.

[0066] Specifically, the composite insulator 30 is provided with a shed 305 on the outside, which can be a silicone rubber shed 305. The silicone rubber shed 305 is integrally injection molded on the outside of the insulating tube 306. The winding layer 301 and the winding layer 302 are both formed by winding glass fiber yarn impregnated with a matrix material.

[0067] The semiconductor material layer 304 is used as the inner lining of the winding layer 301 and is combined on the inner part of the winding layer 301. The semiconductor material layer 303 is located on the outer part of the winding layer 301. The positions of the two layers correspond to each other and are usually arranged at the electric field concentration point.

[0068] The materials of the semiconductor material layer 303 and the semiconductor material layer 304 may be the same or different. For example, if the semiconductor material layer 303 is formed by brushing a semiconductor silicone rubber coating containing a conductive filler, the semiconductor material layer 304 may also be formed by brushing a semiconductor silicone rubber coating containing a conductive filler. Of course, the semiconductor material layer 304 may also be formed by other semiconductor coatings by brushing; if the semiconductor material layer 303 is formed by winding a semiconductor fiber yarn, the semiconductor material layer 304 may also be formed by winding a semiconductor fiber yarn.

[0069] The resistivity of the semiconductor material layer 303 and the semiconductor material layer 304 can be selected to be the same or different. Semiconductor material layers with different resistivities can be optimally combined, with stronger control and regulation capabilities for the electric field and a wider range of applications.

[0070] like Figure 4 As shown, a fourth embodiment of a composite insulator according to the present invention comprises an insulating tube 407 and an shed 405 coated on the outside of the insulating tube 407, wherein the insulating tube 407 comprises a winding layer 401, a winding layer 402, a semiconductor material layer 403, a semiconductor material layer 406 and a semiconductor material layer 404, wherein the winding layer 401 is away from the shed 405, the semiconductor material layer 403 is located between the winding layer 401 and the winding layer 402 and on a partial cross section on the outside of the winding layer 401, the semiconductor material layer 406 is located on a partial cross section on the inside of the winding layer 401, and the semiconductor material layer 404 is located on a partial cross section on the outside of the winding layer 402.

[0071] The resistivities of the semiconductor material layer 406 , the semiconductor material layer 403 , and the semiconductor material layer 404 may be the same or different, and the different resistivities may be distributed in a stepped manner.

[0072] By alternately arranging three layers of semiconductor material between two layers of winding layers, it has stronger practicality and wider application range, can better alleviate electric field concentration, improve electric field distribution, avoid electrical corrosion damage to the umbrella skirt 405, and extend the service life of the insulating tube 407.

[0073] like Figure 5 As shown, the first embodiment of the manufacturing method of the composite insulator of the present invention is described. In order to facilitate the understanding of the following steps, the first embodiment of the composite insulator of the present invention is described. Figure 1 , the manufacturing method comprises the following steps:

[0074] S11: providing a core mold;

[0075] Specifically, a core mold for producing a composite insulator is provided, and the core mold is fixed on a winding machine.

[0076] S12: forming a winding layer 102 on the core mold;

[0077] Specifically, glass fiber yarn impregnated with epoxy resin glue may be used to wind the winding layer 102 at a certain angle on the core mold.

[0078] S13: forming a semiconductor material layer 103 on a partial cross section outside the winding layer 102;

[0079] Specifically, this step may include:

[0080] S101: Apply a semiconductor coating on a partial cross section of the outer side of the winding layer 102 to form a semiconductor material layer 103. The semiconductor coating may include a semiconductor silicone rubber coating 103 containing a conductive filler.

[0081] Or S102: winding semiconductor fiber yarn on a partial cross-section outside the winding layer 102 to form a semiconductor material layer 103. The semiconductor fiber yarn can be selected as semiconductor fiber yarn impregnated with epoxy resin glue, which is wound on the outside of the winding layer 102. The two can be well combined, have good interface characteristics, and are not easy to separate.

[0082] S14: forming the winding layer 101 on the winding layer 102 and the semiconductor material layer 103 to form the insulating tube 104;

[0083] Specifically, glass fiber yarn impregnated with epoxy resin glue can be optionally used to wind the winding layer 102 and the semiconductor material layer 103 at a certain angle to form the winding layer 101. Since the semiconductor material layer 103 is located on a partial cross-section outside the winding layer 102, during the molding process of the winding layer 101, the glass fiber yarn impregnated with epoxy resin glue partially directly contacts the winding layer 102, and partially directly contacts the semiconductor material layer 103, and the interface performance of the contact part is good.

[0084] At this point, the glass fiber reinforced plastic insulation tube 104 containing the semiconductor material layer 103 is formed.

[0085] S15: The outer side of the insulating tube 104 is covered to form an shed 105 .

[0086] Specifically, the silicone rubber shed 105 may be integrally injection-molded on the outer side of the insulating tube 104 .

[0087] In this way, a semiconductor material layer 103 is provided inside the insulating tube 104, which can improve the interference of the electric field on the composite insulator, improve the local electric field distribution, alleviate the electric field concentration, avoid discharge and electrocorrosion on the surface of the umbrella skirt 105, and avoid the life of the insulating tube 104 from decreasing after long-term use. The composite insulator can be used in post insulators, composite bushings or other high-voltage power equipment.

[0088] like Figure 6 As shown, the second embodiment of the manufacturing method of the composite insulator of the present invention is described in detail. In order to facilitate the understanding of the following steps, the second embodiment of the composite insulator of the present invention is described in detail. Figure 2 , the manufacturing method comprises the following steps:

[0089] S21: providing a core mold;

[0090] Specifically, a core mold for producing a composite insulator is provided, and the core mold is fixed on a winding machine.

[0091] S22: forming a winding layer 201 on the core mold;

[0092] Specifically, glass fiber yarn impregnated with epoxy resin glue may be used to wind the winding layer 201 at a certain angle on the core mold.

[0093] S23: forming a semiconductor material layer 203 on a partial cross section outside the winding layer 201;

[0094] The semiconductor material layer 203 is formed by brushing a semiconductor coating on a partial cross section outside the winding layer 201 . The semiconductor coating may optionally include a semiconductor silicone rubber coating 203 containing a conductive filler.

[0095] S24: forming a winding layer 202 on the winding layer 201 and the semiconductor material layer 203;

[0096] Specifically, glass fiber yarn impregnated with epoxy resin glue may be wound on the winding layer 201 and the semiconductor material layer 203 at a certain angle to form the winding layer 202 .

[0097] S25: forming a semiconductor material layer 204 on a partial cross section outside the winding layer 202 to form an insulating tube 206;

[0098] The semiconductor material layer 204 is formed by brushing a semiconductor coating on a partial cross section outside the winding layer 202. The semiconductor coating may be a semiconductor silicone rubber coating 204 containing conductive fillers.

[0099] The position of the semiconductor material layer 204 corresponds to the position of the semiconductor material layer 203 , and is usually disposed at a location where the electric field is concentrated.

[0100] At this point, a glass fiber reinforced plastic insulation tube 206 provided with two semiconductor material layers is formed.

[0101] S26: The outer side of the insulating tube 206 is covered to form an umbrella skirt 205.

[0102] Specifically, the silicone rubber shed 205 may be integrally injection-molded on the outer side of the insulating tube 206 .

[0103] Through this manufacturing method, factors that interfere with the electric field distribution are present at different thicknesses of the insulating tube 206, which can further avoid electric field concentration and further improve the mitigation effect.

[0104] like Figure 7 As shown, the third embodiment of the manufacturing method of the composite insulator of the present invention, in order to facilitate the understanding of the following steps, combined with the third embodiment of the composite insulator of the present invention Figure 3 , the manufacturing method comprises the following steps:

[0105] S31: providing a core mold;

[0106] Specifically, a core mold for producing a composite insulator is provided, and the core mold is fixed on a winding machine.

[0107] S32: forming a semiconductor material layer 304 on the core mold;

[0108] Semiconductor fiber yarn impregnated with matrix material is wound around a portion of the core mold to form a semiconductor material layer 304, which surrounds the core mold and covers a portion of the cross section of the outer surface of the core mold. The matrix material can be epoxy resin glue, and the semiconductor material layer 304 has a certain thickness and width, which are selected according to actual conditions.

[0109] S33 : forming a winding layer 301 on the core mold and the semiconductor material layer 304 .

[0110] Specifically, glass fiber yarn impregnated with epoxy resin glue may be optionally wound on the core mold at a certain angle to form a winding layer 301 , and the winding layer 301 also covers the semiconductor material layer 304 .

[0111] S34: forming a semiconductor material layer 303 on a partial cross section outside the winding layer 301;

[0112] On the partial cross section outside the winding layer 301 , that is, at the position corresponding to the semiconductor material layer 303 , the semiconductor fiber yarn impregnated with the matrix material is wound and formed. The matrix material can be epoxy resin glue so that it has good interface bonding with the winding layer 301 .

[0113] S35: forming a winding layer 302 on the winding layer 301 and the semiconductor material layer 303, thereby forming an insulating tube 306;

[0114] Specifically, glass fiber yarn impregnated with epoxy resin glue may be wound on the winding layer 301 and the semiconductor material layer 303 at a certain angle to form the winding layer 302 .

[0115] At this point, a glass fiber reinforced plastic insulation tube 306 provided with two semiconductor material layers is formed.

[0116] S36: The outer side of the insulating tube 306 is covered to form an umbrella skirt 305.

[0117] Specifically, the silicone rubber shed 305 may be integrally injection-molded on the outer side of the insulating tube 306 .

[0118] Through this manufacturing method, factors that interfere with the electric field distribution are present at different thicknesses of the insulating tube 306, which can further avoid electric field concentration and further improve the mitigation effect.

[0119] An embodiment of the composite bushing of the present invention comprises the composite insulator of the above embodiments.

[0120] In a specific embodiment, Figure 8 As shown, the composite bushing 500 includes a composite insulator 50 and a grounded shielding electrode 51. The composite insulator 50 includes an insulating tube 504 and an shed 505 wrapped around the outside of the insulating tube 504. The insulating tube 504 includes a winding layer 501, a semiconductor material layer 503 and a winding layer 502. The winding layer 501 is away from the shed, and the semiconductor material layer 503 is located between the winding layer 501 and the winding layer 502 and is located on a partial cross-section outside the winding layer 501.

[0121] The semiconductor material layer 503 in the composite insulator 50 corresponds to the position of the grounded shielding electrode 51, which can alleviate the electric field concentration, avoid the corresponding silicone rubber shed 505 surface discharge and electrocorrosion, and avoid the insulation life of the insulating tube 504 being reduced under high field strength for a long time; at the same time, due to the decrease in electric field strength at the same position, the inner diameter and wall thickness of the insulating tube 504 can be reduced, and the requirements of the composite bushing 500 can still be met. Under the same voltage level, the inner diameter and wall thickness of the composite insulator 50 corresponding to the composite bushing 500 are reduced, the material loss is reduced, the production cost can be significantly reduced, and it is conducive to the realization of miniaturized composite bushings.

[0122] In some applications, making the semiconductor material layer 503 electrically contact with the lower flange 52 of the composite sleeve 500 can replace the function of the ground shielding electrode 51, thereby eliminating the setting of the ground shielding electrode 51, making the composite sleeve structure more compact and miniaturized, saving space and reducing costs.

[0123] It should be noted that the key point of the composite insulator protection of the present invention lies in the staggered arrangement of winding layers and semiconductor material layers. The number of winding layers and the number of semiconductor material layers are set according to actual conditions and are not limited to the above-mentioned embodiments.

[0124] The technical content and technical features of the present invention have been disclosed above, but it is understood that under the creative ideas of the present invention, those skilled in the art can make various changes and improvements to the above structures and materials, including combinations of technical features disclosed or claimed separately herein, and obviously including other combinations of these features. These variations and / or combinations all fall within the technical field involved in the present invention and fall within the protection scope of the claims of the present invention.

Claims

1. A composite insulator, characterized in that: The invention comprises an insulating tube and an shed wrapped outside the insulating tube, wherein the insulating tube comprises a first winding layer, a first semiconductor material layer and a second winding layer, wherein the first winding layer is away from the shed, and the first semiconductor material layer is located between the first winding layer and the second winding layer and on a partial cross section outside the first winding layer; The insulating tube further comprises a second semiconductor material layer, wherein the second semiconductor material layer is located on a partial cross section inside the first winding layer and / or located on a partial cross section outside the second winding layer; The first semiconductor material layer and the second semiconductor material layer are located in corresponding positions and are both located at a concentrated electric field; The first semiconductor material layer and the second semiconductor material layer have different resistivities.

2. The composite insulator according to claim 1, characterized in that: The first semiconductor material layer is formed by brushing a semiconductor coating on the first winding layer.

3. The composite insulator according to claim 2, characterized in that: The semiconductor coating is a semiconductor silicone rubber coating containing conductive fillers.

4. The composite insulator according to claim 1, characterized in that: The first semiconductor material layer is formed by winding semiconductor fiber yarn on the first winding layer.

5. The composite insulator according to claim 1, characterized in that: The first winding layer and the second winding layer are both formed by winding glass fiber yarn impregnated with a matrix material.

6. The composite insulator according to claim 1, characterized in that: The first semiconductor material layer and the second semiconductor material layer have the same thickness, and the first semiconductor material layer and the second semiconductor material layer have different widths.

7. A method for manufacturing a composite insulator, characterized in that: include: Providing a core mold; forming a first winding layer on the core mold; Forming a first semiconductor material layer on a partial cross section of the outer side of the first winding layer corresponding to the electric field concentration location of the composite insulator; forming a second winding layer on the first winding layer and the first semiconductor material layer to form an insulating tube; Wrapping the outer side of the insulating tube to form an umbrella skirt; Wherein, the step of forming the first winding layer on the core mold includes: forming a second semiconductor material layer on the core mold, and forming the first winding layer on the core mold and the second semiconductor material layer, so that the second semiconductor material layer is located on the inner side of the first winding layer corresponding to the partial cross-section of the electric field concentration of the composite insulator; and / or, the step after forming the second winding layer on the first winding layer and the first semiconductor material layer includes: forming the second semiconductor material layer on the outer side of the second winding layer corresponding to the partial cross-section of the electric field concentration of the composite insulator.

8. The manufacturing method according to claim 7, characterized in that: The step of forming a first semiconductor material layer on a partial cross section of the outer side of the first winding layer corresponding to the electric field concentration location of the composite insulator comprises: A semiconductor coating is applied on a partial cross section of the outer side of the first winding layer corresponding to the electric field concentration location of the composite insulator to form the first semiconductor material layer.

9. The manufacturing method according to claim 7, characterized in that: The step of forming a first semiconductor material layer on a partial cross section of the outer side of the first winding layer corresponding to the electric field concentration location of the composite insulator comprises: Semiconductor fiber yarn is wound on a partial cross section of the outer side of the first winding layer corresponding to the electric field concentration location of the composite insulator to form the first semiconductor material layer.

10. A composite casing, characterized in that: Comprising the composite insulator as described in any one of claims 1-6.

11. The composite casing according to claim 10, characterized in that: A ground shielding electrode is also included, and the first semiconductor material layer corresponds to the position of the ground shielding electrode.

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