A device for cooling a silicon core drawing zone during silicon core drawing

Abstract

A device for cooling a silicon core drawing zone during silicon core drawing relates to the field of artificial crystals. In the present invention, a cooling liquid passage cools the bottom of a gate valve, thereby improving the reliability of the gate valve, effectively improving the life of the gate valve, etc., and then a throttle valve (10) is arranged at the air inlet end of each blowing pipe (3) to adjust the blowing volume for drawing holes with different crystallization temperatures, thereby ensuring that the crystallization temperature of each crystallization zone is consistent, thereby achieving simultaneous drawing of multiple silicon cores, effectively ensuring the quality of the silicon cores, etc., rapid and uniform cooling of the silicon core can increase the crystal drawing speed and increase the diameter of the drawn silicon core, and the increase in the diameter of the silicon core can accelerate its growth speed in a reduction furnace at a later stage, thereby improving production efficiency, etc. The present invention has the advantages of simple structure and good use effect, and is suitable for large-scale promotion and application.

Description

[Technical field]

[0002] The invention relates to the field of artificial crystals, and in particular to a device for cooling a silicon core drawing zone when the silicon core is drawn. [Background technology]

[0004] As is known, in the process of preparing silicon core, seed crystal is generally used for seeding, and the silicon core is pulled after the seeding is completed. In this process, the seed crystal needs to be clamped by a seed crystal chuck. After the high-frequency coil partially melts the end of the raw material rod into liquid, the seed crystal chuck drives the seed crystal down, passes through the drawing hole of the high-frequency coil, and is inserted into the solution at the upper end of the raw material rod. Then, the seed crystal is driven up by the seed crystal chuck, and the seed crystal drives the solution up and recrystallizes, finally forming a silicon core of the required length.

[0005] In the process of the seed crystal rising with the melt, when the melt leaves the drawing hole of the high-frequency coil, it will gradually cool down and recrystallize. At this time, the lifting speed of the upper shaft that drives the seed crystal to rise is slow. Taking the drawing of a silicon core with a diameter of &8mm as an example, when drawing a silicon core with a diameter of &8mm, the lifting speed of the upper shaft is about 14mm / min, and when drawing a silicon core with a diameter of &10mm, the lifting speed of the upper shaft is about 12mm / min. The diameter of the drawn silicon core is generally between &8 and &15mm. The larger the diameter of the drawn silicon core, the faster its growth rate in the reduction furnace in the later stage and the higher the production efficiency. Therefore, how to improve the production efficiency of the silicon core and increase the diameter of the silicon core has become one of the technical demands in this field.

[0006] At the same time, in order to improve the efficiency of silicon core drawing, the silicon core can be taken and placed without stopping the silicon core furnace. Most of them are equipped with a gate valve between the lower furnace chamber and the middle furnace chamber of the silicon core furnace. When a group of silicon cores are drawn, the gate valve is closed to keep the lower furnace chamber under the gate valve in a vacuum state, and then the doors of the middle furnace chamber and the upper furnace chamber are opened to take out the prepared silicon core, and then the upper furnace door and the middle furnace door are closed to evacuate the middle furnace chamber and fill it with argon, and then the gate valve is opened to start a new round of silicon core drawing, etc. However, due to the excessive heat in the lower furnace chamber, the existing gate valve is difficult to open and close under long-term high temperature operation, and in severe cases, the gate valve may be damaged.

[0007] In view of the above technical problems, there is currently a related patent application (patent name: "A device for increasing the crystallization speed of silicon core when drawing silicon core"; patent application number is 201720154782.3, application date is February 21, 2017, and announcement number is CN206494987U). This application effectively increases the crystallization speed of silicon core by means of a blowing device, and this application is used as a reference in this application.

[0008] Although the above patent application solves the problem of slow crystallization of silicon cores, in the process of drawing silicon cores, the gas flow rate of each blowing pipe cannot be adjusted (that is, the blowing volume of each blowing pipe is the same), and the drawing hole temperature corresponding to each blowing pipe is inconsistent. When the blowing volume is the same, the crystallization speed of the newly drawn silicon core will be inconsistent, affecting the quality of the silicon core, and in severe cases, it will cause some silicon cores to be scrapped. The most important thing is that the above patent cannot cool the gate valve at the same time, so how to provide a device for cooling the silicon core drawing area when drawing the silicon core has always been a long-term technical demand of technicians in this field. [Summary of the invention]

[0010] In view of the deficiencies in the background technology, the present invention discloses a device for cooling a silicon core drawing zone during silicon core drawing. In the present invention, a cooling liquid passage cools the gate valve, thereby improving the reliability of the gate valve, effectively improving the life of the gate valve, etc., and then by adjusting the throttle valve, the blowing volume of the drawing holes with different crystallization temperatures can be adjusted, thereby ensuring that the crystallization temperature of each crystallization zone is consistent, thereby achieving simultaneous drawing of multiple silicon cores, effectively ensuring the quality of the silicon cores, etc.

[0011] In order to achieve the above-mentioned invention object, the present invention adopts the following technical scheme:

[0012] A device for cooling a silicon core drawing zone during silicon core drawing, comprising a plate body and an air blowing pipe, wherein an upper groove concave downward is provided on the plate body, and a plurality of silicon core perforation fixing columns extending upward are provided at intervals on the upper part of the bottom surface of the upper groove, and each silicon core perforation fixing column is provided with a silicon core perforation penetrating to the bottom of the plate body, and a plurality of cooling gas passages are provided on the bottom surface of the upper groove, and the air outlet of each cooling gas passage is respectively connected to the air inlet end of the air blowing pipe provided under the plate body, and the air outlet end of each air blowing pipe corresponds to the crystallization zone of the silicon core, and each cooling gas passage is provided with a plurality of cooling gas passages. The air inlets of the passages are respectively passed through to the outer edge surface of the plate body, each air inlet is respectively connected to the air outlet end of the throttle valve, and the air inlet end of each throttle valve is respectively connected to the gas diversion outlet of the total air path arranged under the plate body. The total air inlet of the total air path is connected to the gas source, and water inlets and water outlets are spaced apart on the inner edge surface of the upper groove. The water inlet and water outlet are respectively connected to the water inlet pipe and the drain pipe, and an upper cover plate is provided on the upper groove, and a plurality of perforations corresponding to the silicon core perforations are provided on the upper cover plate to form the device for cooling the silicon core drawing area when the silicon core is drawn.

[0013] The device for cooling the silicon core drawing zone during silicon core drawing has a plurality of silicon core perforated fixing columns arranged in the middle with one silicon core perforated fixing column and the remaining silicon core perforated fixing columns evenly distributed around the periphery of the middle silicon core perforated fixing column.

[0014] The device for cooling the silicon core drawing zone during silicon core drawing is provided with a guide plate between the middle silicon core perforated fixing column and the silicon core perforated fixing columns on its periphery, and the guide plate is located between the water inlet and the water outlet.

[0015] The device for cooling the silicon core drawing zone during silicon core drawing has a sleeve arranged in the silicon core through-hole.

[0016] The device for cooling the silicon core drawing zone during silicon core drawing is provided with a plurality of upwardly protruding welding fixing columns on the bottom surface of the upper groove outside the silicon core perforated fixing column.

[0017] The device for cooling the silicon core drawing zone during silicon core drawing is provided with a vent hole penetrating to the bottom of the plate body in the middle of the welding fixing column.

[0018] The device for cooling the silicon core drawing zone during silicon core drawing has a cooling gas passage structure in which a downwardly recessed cooling gas passage is provided on the bottom surface of the upper groove, and a cooling gas passage cover is provided at the upper end of the cooling gas passage.

[0019] The device for cooling the silicon core drawing zone during silicon core drawing has a replacement structure for the cooling gas passageway that the cooling gas passageway is a metal tube.

[0020] The device for cooling the silicon core drawing zone during silicon core drawing, the structure of the main gas path is that a recessed main gas channel is provided under the plate body, a plurality of gas diversion channels and a main air inlet are respectively provided on the inner edge surface of the main gas channel, the gas diversion outlet of each gas diversion channel is respectively arranged on the outer edge surface of the plate body, and a main gas channel cover is provided at the open end of the main gas channel.

[0021] The device for cooling the silicon core drawing zone during silicon core drawing is provided with a quartz plate below the plate body through a connecting rod, and a plurality of silicon core limiting holes are provided on the quartz plate, and each silicon core limiting hole corresponds to a silicon core through-hole.

[0022] Due to the adoption of the above-mentioned technical solution, the present invention has the following beneficial effects:

[0023] In the present invention, the cooling liquid passage cools the bottom of the gate valve, thereby improving the reliability of the use of the gate valve, effectively increasing the life of the gate valve, etc., and then a throttle valve is arranged at the air inlet end of each blowing pipe, so that the blowing amount can be adjusted for the drawing holes with different crystallization temperatures, thereby ensuring that the crystallization temperature of each crystallization zone is consistent, thereby achieving simultaneous drawing of multiple silicon cores, effectively ensuring the quality of the silicon cores, etc. The rapid and uniform cooling of the silicon core can increase the drawing speed of the crystal and increase the diameter of the drawn silicon core, and the increase in the diameter of the silicon core accelerates its growth rate in the reduction furnace at a later stage, thereby improving production efficiency, etc. The present invention has the advantages of simple structure and good use effect, and is suitable for large-scale promotion and application.

Brief Description of the Drawings

[0025] Figure 1 It is a schematic diagram of the main structure of the present invention;

[0026] Figure 2 It is a schematic diagram of the top view of the structure of the present invention;

[0027] Figure 3 It is a schematic diagram of the structure of the present invention when viewed from above;

[0028] Figure 4 It is a structural schematic diagram of the plate body in the present invention;

[0029] Figure 5 It is a schematic diagram of the arrangement structure of the cooling gas channel cover plate in the present invention;

[0030] Figure 6 It is a schematic diagram of the overall airway structure in the present invention;

[0031] Figure 7 It is a schematic diagram of the arrangement structure of the main airway cover plate in the present invention;

[0032] In the figure: 1. plate body; 2. air distributor nozzle; 3. air blowing pipe; 4. connecting rod; 5. quartz plate; 6. connecting hole; 7. welding fixing column; 8. silicon core perforation; 9. upper cover plate; 10. throttle valve; 11. water inlet; 12. water outlet; 13. air outlet; 14. cooling gas channel; 15. gas diversion outlet; 16. air inlet; 17. cooling gas channel cover plate; 18. main air duct; 19. main air inlet; 20. main air duct cover plate; 21. platform; 22. guide plate. [Specific implementation method]

[0034] The present invention can be explained in more detail by the following examples. The purpose of disclosing the present invention is to protect all changes and improvements within the scope of the present invention. The present invention is not limited to the following examples.

[0035] Combined with Figures 1 to 7A device for cooling a silicon core drawing zone during silicon core drawing as described in the invention comprises a plate body 1 and an air blowing pipe 3, wherein an upper groove which is sunken downward is provided on the plate body 1, wherein the upper groove is in the shape of a circular structure, and a plurality of silicon core perforated fixing columns extending upward are provided at intervals on the upper part of the bottom surface of the upper groove, wherein the layout of the plurality of silicon core perforated fixing columns is that a silicon core perforated fixing column is provided in the middle, and the remaining silicon core perforated fixing columns are evenly distributed around the periphery of the middle silicon core perforated fixing column, wherein the layout of the silicon core perforated fixing columns is consistent with the layout of the drawing holes on the high-frequency coil, that is, the number and position of the silicon core perforated fixing columns are consistent with the drawing holes on the high-frequency coil, and the present invention is attached Figure 2 The embodiments given in Figures 1 to 7 are as follows: eight silicon core perforated fixing columns are provided, that is, the number of drawing holes of the high-frequency coil is 8, which can be achieved by drawing 1 to 8 silicon cores. A silicon core perforated fixing column is provided with a silicon core perforated 8 penetrating to the bottom of the plate body 1. Furthermore, in order to increase the service life of the plate body, a replaceable sleeve is provided in the silicon core perforated 8.

[0036] Furthermore, a plurality of upwardly protruding welding fixing columns 7 are provided on the bottom surface of the upper groove outside the silicon core perforated fixing column, and a vent hole penetrating to the bottom of the plate body 1 is provided in the middle of the welding fixing column 7 .

[0037] Furthermore, a plurality of cooling gas passages are provided on the bottom surface of the upper groove, and the structure of the cooling gas passage is that a downwardly recessed cooling gas passage 14 is provided on the bottom surface of the upper groove, and a cooling gas passage cover plate 17 is provided at the upper end of the cooling gas passage 14 by welding. Or an alternative structure of the cooling gas passage is that the cooling gas passage is a metal tube, and a stainless steel tube is preferably used in implementation. The shape of the stainless steel tube can be circular or square, and it can be welded to the bottom surface of the upper groove, or it can be buried in the metal tube fixing groove on the bottom surface of the upper groove. The air outlet 13 of each cooling gas passage is respectively connected to the air inlet end of the blowing pipe 3 provided under the plate body 1, and the air outlet end of each blowing pipe 3 corresponds to the crystallization area of ​​the silicon core, and the air inlet 16 of each cooling gas passage is respectively connected to the plate body 1. On the outer edge surface of the body 1, each air inlet 16 is connected to the air outlet end of the throttle valve 10 through the air dividing nozzle 2, and the air inlet end of each throttle valve 10 is connected to the gas diversion outlet 15 of the total air path arranged under the plate body 1. The total air inlet 19 of the total air path is connected to the gas source, and the gas source can be selected from any one of helium, neon, argon, krypton, xenon or radon. In a specific implementation, the total air inlet 19 can be connected to the air outlet end of the total throttle valve 6, and the air inlet end of the total throttle valve 6 is connected to the gas source through a pipeline.

[0038] Furthermore, a water inlet 11 and a water outlet 12 are provided at intervals on the inner edge surface of the upper groove, and the water inlet 11 and the water outlet 12 are respectively connected to the water inlet pipe and the water outlet pipe, and an upper cover plate 9 is provided on the upper groove, and a cooling liquid passage is formed by welding the upper cover plate 9 and the upper groove, and a plurality of perforations corresponding to the silicon core perforations 8 are provided on the upper cover plate 9, and each perforation is welded to the silicon core perforation fixing column respectively. During implementation, when the welding fixing column 7 is provided, corresponding perforations are also provided on the upper cover plate 9, and then the perforations are welded to the welding fixing column 7 to form the device for cooling the silicon core drawing area during silicon core drawing.

[0039] Furthermore, a guide plate 22 for guiding cooling liquid is provided between the middle silicon core perforated fixing column and the outer silicon core perforated fixing column. The guide plate 22 is located between the water inlet 11 and the water outlet 12. The setting of the guide plate 22 is as follows: Figure 4 , Figure 5 As shown, its main purpose is to prevent the cooling liquid from flowing out directly from the water outlet 12 after entering from the water inlet 11, that is, its function is to divert the cooling medium entering the channel to the entire upper groove.

[0040] Furthermore, the structure of the total gas path is that a concave total gas channel 18 is provided under the plate body 1, a plurality of gas diversion channels and a total gas inlet 19 are respectively provided on the inner edge surface of the total gas channel 18, the gas diversion outlet 15 of each gas diversion channel is respectively provided on the outer edge surface of the plate body 1, and a total gas channel cover plate 20 is provided at the open end of the total gas channel 18 by welding. An alternative structure of the total gas path is that a metal tube is provided under the plate body 1, both ends of the metal tube are closed, and then the total gas inlet 19 and the gas diversion outlet 15 are provided on the metal tube, and the metal tube can be welded under the plate body 1.

[0041] Furthermore, since the gas blown out of the blowing pipe 3 will cause the drawn silicon core to shake, the shaking will become more and more obvious as the length of the drawn silicon core increases. Therefore, a quartz plate 5 is provided under the plate body 1 through a connecting rod 4, and a plurality of silicon core limiting holes are provided on the quartz plate 5, and each silicon core limiting hole corresponds to the silicon core through-hole 8, thereby ensuring that the silicon core does not shake during drawing.

[0042] Furthermore, in a specific implementation, a platform 21 may be provided on the outer edge surface of the plate body 1 , and then a gas diversion outlet 15 and a gas inlet 16 may be provided on the platform 21 .

[0043] In specific implementation, the device is installed under the gate valve and is used to cool the gas of the silicon core. The cooling gas after being diverted by the main air duct 18 enters the cooling gas channel 14 after the blowing volume is adjusted by the throttle valve 10, and then enters the blowing pipe 3 through the cooling gas channel 14, and finally blows to the crystallization area of ​​the silicon core through the blowing pipe 3, thereby ensuring the uniformity of the crystallization of each silicon core.

[0044] As described above, the main idea of ​​the present invention is to use a throttle valve 10 to control the blowing volume of each blowing pipe 3 outlet respectively, so as to meet the crystallization temperature of the drawing holes with different temperatures, thereby achieving the simultaneous drawing of multiple silicon cores and ensuring the qualified rate of each silicon core drawing. Then, the gate valve located on the device is cooled by the cooling liquid channel to ensure the stable operation of the gate valve. The cooling liquid channel in the present invention can not only cool the gate valve, but also cool the gas entering the cooling gas channel 14, ensuring the cooling effect on the silicon core crystallization area.

[0045] Taking the use of a silicon core furnace to draw a silicon core as an example, after the upper end of the raw material rod in the furnace body melts, the seed crystal driven by the seed crystal chuck is slowly passed through the drawing hole on the high-frequency coil through the control system, and inserted into the melt at the upper end of the raw material rod. After the end of the seed crystal and the melt at the upper end of the raw material rod are integrated, the seed crystal driven by the seed crystal chuck is slowly lifted through the control system. When the melt leaves the drawing hole on the high-frequency coil, it gradually begins to crystallize and form the required silicon core. At this time, the control system opens the air intake valve, argon enters the main airway 18, and then the argon enters each blowing pipe 3 after pressure regulation by each throttle valve 10. Argon then blows the gas to the crystallization area of ​​the silicon core through the blowing pipe 3 to achieve rapid cooling of the crystallization area. At the same time, the water inlet valve is opened, and the cooling water enters the cooling liquid passage from the water inlet 11, and is discharged from the water outlet 12 after the cooling liquid passage bypasses. In specific implementation, the cooling water can also be replaced by cooling gas, that is, the water source is replaced by the gas source.

[0046] The parts not described in detail in the above content are prior art, so they are not described in detail.

[0047] The embodiments selected herein for the purpose of disclosing the present invention are those presently considered suitable, but it should be understood that the present invention is intended to include all changes and modifications of the embodiments that fall within the scope of the present concept and invention.

Claims

1. A device for cooling a silicon core drawing zone during silicon core drawing, the device being installed below a gate valve, comprising a plate body (1) and a blow pipe (3), wherein: An upper groove recessed downward is provided on the plate body (1), a plurality of silicon core perforation fixing columns extending upward are provided at intervals on the upper part of the bottom surface of the upper groove, each silicon core perforation fixing column is provided with a silicon core perforation (8) penetrating to the bottom of the plate body (1), a plurality of cooling gas passages are provided on the bottom surface of the upper groove, the gas outlet (13) of each cooling gas passage is respectively connected to the gas inlet end of the blowing pipe (3) provided under the plate body (1), the gas outlet end of each blowing pipe (3) corresponds to the crystallization area of ​​the silicon core, the gas inlet (16) of each cooling gas passage is respectively penetrating to the outer edge surface of the plate body (1), and each gas inlet (1 6) are respectively connected to the gas outlet ends of the throttle valves (10), and the gas inlet ends of each throttle valve (10) are respectively connected to the gas diversion outlet (15) of the main gas path arranged below the plate body (1), and the main gas inlet (19) of the main gas path is connected to the gas source. A water inlet (11) and a water outlet (12) are arranged at intervals on the inner edge surface of the upper groove, and the water inlet (11) and the water outlet (12) are respectively connected to the water inlet pipe and the water outlet pipe. An upper cover plate (9) is arranged on the upper groove, and a plurality of perforations corresponding to the silicon core perforations (8) are arranged on the upper cover plate (9) to form the device for cooling the silicon core drawing area when the silicon core is drawn.

2. The device for cooling a silicon core drawing zone during silicon core drawing according to claim 1, characterized in that: The layout of the plurality of silicon core perforated fixing columns is that a silicon core perforated fixing column is arranged in the middle, and the remaining silicon core perforated fixing columns are evenly distributed around the periphery of the middle silicon core perforated fixing column.

3. The device for cooling the silicon core drawing zone during silicon core drawing according to claim 2, characterized in that: A guide plate (22) is provided between the middle silicon core perforated fixing column and the silicon core perforated fixing columns on its periphery, and the guide plate (22) is located between the water inlet (11) and the water outlet (12).

4. The device for cooling a silicon core drawing zone during silicon core drawing according to claim 1, characterized in that: A sleeve is provided in the silicon core through hole (8).

5. The device for cooling the silicon core drawing zone during silicon core drawing according to claim 1, characterized in that: A plurality of upwardly protruding welding fixing columns (7) are provided on the bottom surface of the upper groove on the periphery of the silicon core perforated fixing column.

6. The device for cooling a silicon core drawing zone during silicon core drawing according to claim 5, characterized in that: A vent hole is provided in the middle of the welding fixing column (7) and extends through to the bottom of the plate body (1).

7. The device for cooling a silicon core drawing zone during silicon core drawing according to claim 1, characterized in that: The structure of the cooling gas passage is that a downwardly recessed cooling gas passage (14) is provided on the bottom surface of the upper groove, and a cooling gas passage cover plate (17) is provided at the upper end of the cooling gas passage (14).

8. The device for cooling a silicon core drawing zone during silicon core drawing according to claim 1, characterized in that: An alternative structure of the cooling gas passage is that the cooling gas passage is a metal pipe.

9. The device for cooling a silicon core drawing zone during silicon core drawing according to claim 1, characterized in that: The structure of the main gas path is that a recessed main gas channel (18) is provided below a plate body (1), a plurality of gas diversion channels and a main gas inlet (19) are provided on the inner edge surface of the main gas channel (18), the gas diversion outlet (15) of each gas diversion channel is provided on the outer edge surface of the plate body (1), and a main gas channel cover plate (20) is provided at the open end of the main gas channel (18).

10. The device for cooling a silicon core drawing zone during silicon core drawing according to claim 1, characterized in that: A quartz plate (5) is provided below the plate body (1) via a connecting rod (4), and a plurality of silicon core limiting holes are provided on the quartz plate (5), each silicon core limiting hole corresponding to a silicon core through hole (8).

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