Atomic layer deposition device and atomic layer deposition method

Abstract

The present invention relates to the field of semiconductor integration technology, and in particular to an atomic layer deposition device and an atomic layer deposition method. The atomic layer deposition device includes a work platform and a box body, the work platform is a rotating body, and the side wall of the work platform is provided with at least two independently arranged carrier cavities and a partition part for spacing the carrier cavities, and the carrier cavity is provided with an air hole for ventilating into the carrier cavity; the box body includes a rotating body accommodating part and at least two independently arranged source supply cavities outside the rotating body accommodating part, and the rotating body accommodating part is sleeved outside the work platform; the work platform can rotate to make the carrier cavity communicate with the source supply cavity, so that the source supply cavity can supply precursors to the carrier cavity, or the partition part can cover the opening of the source supply cavity to separate the source supply cavity and the carrier cavity, so as to facilitate the purge operation of the substrate in the carrier cavity, thereby isolating the purge operation area and the precursor adsorption area, reducing the purge time and reducing the cost; and it can greatly reduce particle contamination and improve the product yield.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor integration technology, and in particular to an atomic layer deposition device and an atomic layer deposition method. Background Art

[0002] Atomic layer deposition (ALD) was used to study the process of Al2O3 thin film, and the optimal process conditions of 85°C low-temperature Al2O3 thin film ALD were obtained. At present, atomic layer deposition equipment can be used to prepare Al2O3 thin films, such as trimethylaluminum (TMA) and H2O as precursors, which are used in the semiconductor field or thin film packaging field.

[0003] However, the purge and cleaning time of the existing atomic layer deposition device is long, which results in a long product production cycle and increased production costs. In the prior art, different reaction gas sources are usually passed through a chamber, causing the film formation reaction to occur on the inner wall of the chamber or at the junction of the chamber. When these films accumulate to a certain extent, they will break and fall off, producing more micro-nano particles, resulting in a decrease in product yield.

[0004] Therefore, an atomic layer deposition device is urgently needed to solve the above problems. Summary of the invention

[0005] The purpose of the present invention is to provide an atomic layer deposition device that is convenient for purging a substrate, shortening the purging time, saving materials, shortening the product production cycle, and reducing costs; and can greatly reduce particle contamination and improve product yield.

[0006] In order to achieve the above objectives, the following technical solutions are provided:

[0007] In one aspect, an atomic layer deposition apparatus is provided, comprising:

[0008] The work platform is a rotating body, and the side wall of the work platform is provided with at least two independently arranged wafer carrier cavities and a partition part for separating the wafer carrier cavities, and the wafer carrier cavity is provided with an air hole, and the air hole is used to ventilate the wafer carrier cavity to perform a purge operation on the substrate in the wafer carrier cavity;

[0009] The box body comprises a rotating body accommodating portion and at least two source supply chambers independently arranged outside the rotating body accommodating portion, the rotating body accommodating portion is sleeved outside the working platform, and the source supply chamber can supply precursors to the film-carrying chamber;

[0010] The operation platform can rotate so that the film carrier cavity is connected with the source supply cavity, or the partition portion covers the opening of the source supply cavity.

[0011] As an optional solution of the atomic layer deposition device, the wafer carrier cavity and the spacer are both fan-shaped, and the central angle of the spacer is not less than the central angle of the wafer carrier cavity.

[0012] As an optional solution of the atomic layer deposition apparatus, the opening of the source supply chamber is not larger than the opening of the wafer carrier chamber.

[0013] As an optional solution of the atomic layer deposition device, the source supply cavity is fan-shaped, and the center angle of the source supply cavity is equal to the center angle of the carrier cavity.

[0014] As an optional solution of the atomic layer deposition device, at least two of the wafer carrier chambers are evenly spaced apart, and at least two of the source supply chambers are evenly spaced apart outside the rotating body accommodating portion.

[0015] As an optional solution of the atomic layer deposition device, the atomic layer deposition device further includes an upper cover, which is disposed on the top surface of the working platform, and an air inlet pipe connected to the air hole is provided on the upper cover.

[0016] As an optional solution of the atomic layer deposition device, the atomic layer deposition device further includes a lower cover, which is disposed on the bottom surface of the working platform, and an air outlet pipe connected to the air hole is disposed on the lower cover.

[0017] As an optional solution of the atomic layer deposition device, a rotating shaft is arranged on the bottom surface of the working platform, and a through hole is arranged on the lower cover. The rotating shaft can pass through the through hole, and the rotating shaft is used to be connected to a rotating driver.

[0018] As an optional solution of the atomic layer deposition device, an upper groove is provided on the upper cover, and a bottom surface of the upper groove is spaced apart from a top surface of the working platform.

[0019] As an optional solution of the atomic layer deposition device, a lower groove is provided on the lower cover, and a bottom surface of the lower groove is spaced apart from a bottom surface of the working platform.

[0020] As an optional solution of the atomic layer deposition device, each of the source supply chambers is provided with a source air inlet pipe, and the source air inlet pipe is connected to an external precursor source for supplying the precursor to the source supply chamber.

[0021] On the other hand, an atomic layer deposition method is provided. Based on the above atomic layer deposition device, the atomic layer deposition method comprises the following steps:

[0022] placing a substrate in the slide chamber;

[0023] Rotating the work stage, when the wafer carrier chamber is connected with the source supply chamber, introducing a precursor into the source supply chamber, and the substrate in the wafer carrier chamber adsorbs the precursor;

[0024] The working stage is continuously rotated, and when the opening of the source supply chamber is covered and blocked by the spacer, gas is introduced into the wafer carrier chamber to perform a purge operation on the substrate therein.

[0025] As an optional solution of the atomic layer deposition method, the wafer carrier chamber includes a first wafer carrier chamber and a second wafer carrier chamber, the source supply chamber includes a first source supply chamber and a second source supply chamber, and the atomic layer deposition method includes the following steps:

[0026] Putting substrates into the first slide chamber and the second slide chamber;

[0027] The working stage is rotated, and when the first wafer carrier cavity is connected with the first source supply cavity, a first precursor is introduced into the first source supply cavity, and the substrate in the first wafer carrier cavity absorbs the first precursor;

[0028] Continue to rotate the work stage, and when all the openings of the source supply chambers are covered and blocked by the spacer, introduce gas into the first wafer carrier chamber to perform a purge operation on the substrate therein;

[0029] The work stage is continuously rotated, and when the first wafer carrier cavity is connected to the second source supply cavity correspondingly, the second precursor is introduced into the second source supply cavity, and the substrate in the first wafer carrier cavity absorbs the second precursor; during this process, the second wafer carrier cavity is connected to the first source supply cavity, and the substrate in the second wafer carrier cavity absorbs the first precursor;

[0030] Continue to rotate the work stage, and when all the openings of the source supply chambers are covered and blocked by the spacer, introduce gas into the first carrier chamber and the second carrier chamber to perform a purge operation on the substrates in the first carrier chamber and the second carrier chamber;

[0031] Repeat the above steps until the substrate in the second wafer carrier chamber adsorbs the second precursor and the second precursor is purged.

[0032] Compared with the prior art, the present invention has the following beneficial effects:

[0033] The atomic layer deposition device provided by the present invention comprises a work platform and a box body, wherein the work platform is a rotating body, and the side wall of the work platform is provided with at least two independently arranged wafer carrier cavities and a partition part for separating the wafer carrier cavities, and the wafer carrier cavity is provided with an air hole for ventilating the wafer carrier cavity; the box body comprises a rotating body accommodating part and at least two independently arranged source supply cavities outside the rotating body accommodating part, and the rotating body accommodating part is sleeved outside the work platform, and the source supply cavity can supply a precursor to the wafer carrier cavity; the work platform can rotate so that the wafer carrier cavity and the source supply cavity are relative to each other The connection makes it convenient for the source chamber to supply the precursor to the carrier chamber, so that the substrate in the carrier chamber can adsorb the precursor, or the partition portion covers the opening of the source chamber to separate the source chamber and the carrier chamber, so that gas can be introduced into the carrier chamber to perform a purge operation on the substrate in the carrier chamber, thereby isolating an independent purge operation area and a precursor adsorption area in the reaction chamber, so that the substrate can adsorb the precursor and perform a purge operation after adsorbing the precursor, thereby shortening the production cycle and reducing costs; and can greatly reduce particle contamination and improve product yield. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments of the present invention. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the contents of the embodiments of the present invention and these drawings without paying any creative work.

[0035] Figure 1 A schematic diagram of the structure of an atomic layer deposition device provided in Embodiment 1 of the present invention;

[0036] Figure 2 A cross-sectional view of an atomic layer deposition device provided in Embodiment 1 of the present invention;

[0037] Figure 3 An exploded schematic diagram of an atomic layer deposition device provided in Embodiment 1 of the present invention;

[0038] Figure 4 Schematic diagram of the structure of the first slide chamber and the first source chamber connected to each other provided in the first embodiment of the present invention Figure 1 ;

[0039] Figure 5 Schematic diagram of the structure in which the first source supply cavity and the second source supply cavity are covered by the partition provided in the first embodiment of the present invention Figure 1 ;

[0040] Figure 6 Schematic diagram of the structure of the first slide chamber and the second source chamber connected to each other provided in the first embodiment of the present invention Figure 2 ;

[0041] Figure 7Schematic diagram of the structure in which the first source supply cavity and the second source supply cavity are covered by the partition provided in the first embodiment of the present invention Figure 2 ;

[0042] Figure 8 A schematic diagram of the structure in which the first slide chamber and the first source supply chamber are connected to each other, provided in the second embodiment of the present invention;

[0043] Fig. 9 A schematic diagram of the structure in which the first source supply cavity and the second source supply cavity are covered by a partition provided in the second embodiment of the present invention;

[0044] Fig.10 A schematic diagram of a structure in which one of the slide chambers is connected to the source supply chamber provided in the third embodiment of the present invention;

[0045] Fig.11 This is a schematic diagram of the structure in which the source cavity is covered by the spacer provided in the third embodiment of the present invention.

[0046] Reference numerals:

[0047] 100-first substrate; 200-second substrate;

[0048] 1-operating stage; 11-first wafer carrier cavity; 12-second wafer carrier cavity; 13-spacer; 14-air hole; 15-rotating shaft;

[0049] 2-box; 21-rotating body accommodating part; 22-first source supply cavity; 23-second source supply cavity; 24-source air inlet pipe;

[0050] 3-upper cover; 31-intake pipe; 32-upper groove;

[0051] 4-lower cover; 41-air outlet pipe; 42-lower groove. DETAILED DESCRIPTION

[0052] In order to enable those skilled in the art to better understand the technical solution of the present invention, the technical solution of the present invention is further described below with reference to the accompanying drawings and through specific implementation methods.

[0053] In the description of the present invention, unless otherwise clearly specified and limited, the terms "connected", "connected", and "fixed" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0054] In the present invention, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being "above", "above" and "above" a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being "below", "below" and "below" a second feature includes that the first feature is directly below and obliquely below the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0055] In the description of this embodiment, the terms "upper", "lower", "left", "right" and other directions or positional relationships are based on the directions or positional relationships shown in the drawings, and are only for the convenience of description and simplification of operation, rather than indicating or implying that the device or element referred to must have a specific direction, be constructed and operate in a specific direction, and therefore cannot be understood as limiting the present invention. In addition, the terms "first" and "second" are only used to distinguish in the description and have no special meaning.

[0056] Embodiment 1

[0057] like Figure 1-Figure 3 As shown, this embodiment provides an atomic layer deposition device, including a work platform 1, a box body 2, an upper cover 3 and a lower cover 4.

[0058] Among them, the work platform 1 is a rotating body, and at least two independently arranged carrier cavities and a partition 13 for separating the carrier cavities are arranged on the side wall of the work platform 1. The carrier cavity is provided with an air hole 14, and the air hole 14 is used to ventilate the carrier cavity to perform a purge operation on the substrate in the carrier cavity; the box body 2 includes a rotating body accommodating part 21 and at least two source supply cavities independently arranged on the outside of the rotating body accommodating part 21, and the rotating body accommodating part 21 is sleeved outside the work platform 1, and the source supply cavity can supply a precursor to the carrier cavity; the work platform 1 can rotate so that the carrier cavity and the source supply cavity are connected, so as to facilitate the source supply cavity to supply the precursor to the carrier cavity, so that the substrate in the carrier cavity absorbs the precursor, or the partition 13 covers the opening of the source supply cavity to separate the source supply cavity and the carrier cavity, so as to facilitate the introduction of gas into the carrier cavity through the air hole to perform a purge operation on the substrate in the carrier cavity.

[0059] The atomic layer deposition device achieves isolation of independent purge operation areas and precursor adsorption areas in the reaction chamber through the cooperation of the work platform 1 and the box 2, so that the substrate can adsorb the precursor and perform a purge operation after the adsorption of the precursor, thereby shortening the production cycle and reducing costs; and can greatly reduce particle contamination and improve product yield.

[0060] Alternatively, the substrate may be a silicon wafer.

[0061] It should be noted that, in the present embodiment, the inner wall of the rotating body accommodating portion 21 is sealed with the outer wall of the work platform 1, which can not only ensure that the work platform 1 rotates in the rotating body accommodating portion 21, but also ensure the sealing between the two, and ensure that the gas in one wafer cavity will not enter other wafer cavities from the gap between the rotating body accommodating portion 21 and the work platform 1.

[0062] In order to facilitate the driving of the work platform 1 to rotate, a rotating shaft 15 is provided on the bottom surface of the work platform 1, and a through hole is provided on the lower cover 4. The rotating shaft 15 can pass through the through hole, and the rotating shaft 15 is used to connect with the rotary driver. In order to introduce the precursor into the source supply cavity, each source supply cavity is provided with a source air inlet 24, and the source air inlet 24 is connected to the external precursor source for supplying the precursor to the source supply cavity. It should be noted that different source supply cavities can be fed with the same or different precursors according to needs, and examples are not given one by one here.

[0063] Furthermore, the upper cover 3 is disposed on the top surface of the work platform 1, and an air inlet pipe 31 connected to the air hole 14 is disposed on the upper cover 3, and the air inlet pipe 31 is connected to the external cleaning gas source. The lower cover 4 is disposed on the bottom surface of the work platform 1, and an air outlet pipe 41 connected to the air hole 14 is disposed on the lower cover 4. The cleaning gas enters the wafer carrier chamber from the air inlet pipe 31 and the air hole 14 at the top, and then is discharged from the air hole 14 at the bottom and the air outlet pipe 41.

[0064] In order to facilitate the gas in the air inlet pipe 31 to enter the wafer carrier chamber, an upper groove 32 is provided on the upper cover 3, and the bottom surface of the upper groove 32 is spaced apart from the top surface of the working platform 1, so that the cleaning gas can be temporarily stored in the upper groove 32, ensuring that the cleaning gas is continuously supplied to the wafer carrier chamber.

[0065] Furthermore, a lower groove 42 is provided on the lower cover 4, and the bottom surface of the lower groove 42 is spaced apart from the bottom surface of the work platform 1. Others in the wafer carrier cavity can enter the lower groove 42 through the air hole 14 at the bottom thereof, and then be discharged through the air outlet pipe 41.

[0066] Preferably, there are multiple air outlet pipes 41 .

[0067] Preferably, the wafer carrier cavity and the partition 13 are both fan-shaped, and the central angle of the partition 13 is not less than the central angle of the wafer carrier cavity, so as to ensure that the partition 13 separates the wafer carrier cavity and avoids mutual influence between the two wafer carrier cavities during precursor adsorption operation or purge operation.

[0068] Preferably, the opening of the source supply chamber is not larger than the opening of the slide chamber, so as to ensure that when the source supply chamber is connected to one slide chamber, the source supply chamber cannot be connected to another slide chamber.

[0069] Optionally, the source supply cavity is a sector-shaped virtual circle formed by at least two source supply cavities and is arranged concentrically with the work stage 1. Exemplarily, the center angle of the source supply cavity is equal to the center angle of the slide cavity, and the opening of the source supply cavity is completely aligned with the opening of the slide cavity.

[0070] Preferably, at least two wafer carrier cavities are evenly spaced apart, and at least two source supply cavities are evenly spaced apart outside the rotating body accommodating portion 2121 .

[0071] In this embodiment, the number of source supply chambers is the same as the number of slide chambers.

[0072] Alternatively, if Figure 4 Combination Figure 3 As shown, there are two slide chambers, namely, the first slide chamber 11 and the second slide chamber 12, and there are also two partitions 13, which are used to separate the first slide chamber 11 and the second slide chamber 12. There are two source chambers, namely, the first source chamber 22 and the second source chamber 23, which are arranged outside the rotating body accommodating portion 21.

[0073] The present embodiment also provides an atomic layer deposition method. Based on the above-mentioned atomic layer deposition device, the atomic layer deposition method includes the following steps: 1) placing a substrate in a carrier chamber; 2) rotating the working stage 1, and when the carrier chamber is connected to the source supply chamber, introducing a precursor into the source supply chamber, and the substrate in the carrier chamber adsorbs the precursor; 3) continuing to rotate the working stage 1, and when the opening of the source supply chamber is covered and blocked by the partition 13, introducing gas into the carrier chamber to purge the substrate therein.

[0074] For example, Figure 4-Figure 7 As shown, taking the example that the wafer carrier chamber includes the first wafer carrier chamber 11 and the second wafer carrier chamber 12, and the source supply chamber includes the first source supply chamber 22 and the second source supply chamber 23, the atomic layer deposition method is described, and the atomic layer deposition method includes the following steps:

[0075] S1, placing a substrate in the first slide chamber 11 and the second slide chamber 12;

[0076] S2, rotating the work stage 1, when the first wafer carrier chamber 11 is connected with the first source supply chamber 22, introducing the first precursor into the first source supply chamber 22, and the substrate in the first wafer carrier chamber 11 absorbs the first precursor;

[0077] S3, continue to rotate the work stage 1, and when all the openings of the source supply chambers are covered and blocked by the spacers 13, introduce gas into the first wafer carrier chamber 11 to purge the substrate therein;

[0078] S4, continue to rotate the work stage 1, when the first carrier chamber 11 is connected with the second source supply chamber 23, the second precursor is introduced into the second source supply chamber 23, and the substrate in the first carrier chamber 11 absorbs the second precursor; in this process, the second carrier chamber 12 is connected with the first source supply chamber 22, and the substrate in the second carrier chamber 12 absorbs the first precursor;

[0079] S5, continue to rotate the work stage 1, and when all the openings of the source chambers are covered and blocked by the partitions 13, introduce gas into the first and second chambers 11 and 12 to purge the substrates in the first and second chambers 11 and 12.

[0080] S6. Continue to rotate the work stage 1. When the second wafer carrier chamber 12 is connected to the second source supply chamber 23 correspondingly, the substrate in the second wafer carrier chamber 12 completes the adsorption of the second precursor. Repeat step S4 to perform a purge operation on the substrate in the second wafer carrier chamber 12.

[0081] In short, after the substrate in the wafer carrier chamber adsorbs one precursor, it needs to be purged and then adsorbed with another precursor, and this cycle is repeated until the product processing is completed.

[0082] Embodiment 2

[0083] The difference between this embodiment and the first embodiment is that the structure of the working platform 1 is different.

[0084] Specifically, Figure 8-Figure 9 As shown, the work platform 1 provided in this embodiment is provided with two independently arranged carrier cavities (a first carrier cavity 11 and a second carrier cavity 12) and a partition portion 13 separating the two carrier cavities, and the partition portion 13 includes a straight line segment and an arc segment, wherein the straight line segment is used to separate the two carrier cavities, and the arc segment is used to narrow the opening of the carrier cavity, and at the same time the arc segment can cover the opening of the source supply cavity (the first source supply cavity 22 and the second source supply cavity 23) so as to separate the source supply cavity from the carrier cavity.

[0085] Embodiment 3

[0086] The difference between this embodiment and the second embodiment is that the number of the wafer-carrying cavities in the working platform 1 is four.

[0087] Specifically, Figure 10-11 As shown, the work platform 1 provided in this embodiment is provided with four independently arranged film carrier cavities and a partition 13 for partitioning the four film carrier cavities. The partition 13 includes a straight line segment and an arc segment, and the arc segment can cover the opening of the source supply cavity (the first source supply cavity 22 and the second source supply cavity 23) so as to separate the source supply cavity from the film carrier cavity.

[0088] Exemplarily, in this embodiment, the source supply cavity is fan-shaped, and the central angle of the source supply cavity is 45°. The arc segment in the spacer 13 is also fan-shaped, and the central angle of the arc segment of the spacer 13 is 45°. The arc segment can cover the opening of the source supply cavity.

[0089] Of course, in other embodiments, the work platform 1 can also be other structures, as long as it can achieve the connection and isolation between the wafer carrier chamber and the source supply chamber, thereby shortening the purge time of the equipment and reducing costs.

[0090] Note that the above are only preferred embodiments of the present invention and the technical principles used. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described herein, and that various obvious changes, readjustments and substitutions can be made by those skilled in the art without departing from the scope of protection of the present invention. Therefore, although the present invention has been described in more detail through the above embodiments, the present invention is not limited to the above embodiments, and may include more other equivalent embodiments without departing from the concept of the present invention, and the scope of the present invention is determined by the scope of the appended claims.

Claims

1. An atomic layer deposition device, characterized in that: include: A work platform (1) is a rotating body, wherein the side wall of the work platform (1) is provided with at least two independently arranged wafer carrier cavities and a partition (13) for partitioning the wafer carrier cavities, and the top and bottom of the wafer carrier cavities are provided with air holes (14), and the air holes (14) are used to ventilate the wafer carrier cavities so as to perform a purge operation on the substrate in the wafer carrier cavities; The box body (2) comprises a rotating body accommodating portion (21) and at least two source supply chambers independently arranged outside the rotating body accommodating portion (21), wherein the rotating body accommodating portion (21) is sleeved outside the working platform (1), and the source supply chamber can supply precursors to the film carrier chamber; The work platform (1) is rotatable so that the film carrier cavity is connected to the source supply cavity, or the partition (13) covers the opening of the source supply cavity; The slide chamber and the spacer (13) are both fan-shaped, and the center angle of the spacer (13) is not less than the center angle of the slide chamber; The opening of the source supply cavity is not larger than the opening of the slide cavity; The source supply cavity is fan-shaped, and the center angle of the source supply cavity is equal to the center angle of the slide cavity.

2. The atomic layer deposition device according to claim 1, characterized in that: At least two of the wafer carrier cavities are evenly spaced apart, and at least two of the source supply cavities are evenly spaced apart outside the rotating body accommodating portion (21).

3. The atomic layer deposition device according to claim 1, characterized in that: The atomic layer deposition device further comprises an upper cover (3), wherein the upper cover (3) is arranged on the top surface of the working platform (1), and an air inlet pipe (31) connected to the air hole (14) is arranged on the upper cover (3).

4. The atomic layer deposition device according to claim 3, characterized in that: The atomic layer deposition device further comprises a lower cover (4), wherein the lower cover (4) is arranged on the bottom surface of the working platform (1), and an air outlet pipe (41) connected to the air hole (14) is arranged on the lower cover (4).

5. The atomic layer deposition device according to claim 1, characterized in that: Each of the source supply chambers is provided with a source air inlet pipe (24), and the source air inlet pipe (24) is connected to an external precursor source and is used to supply the precursor to the source supply chamber.

6. An atomic layer deposition method, based on the atomic layer deposition device according to any one of claims 1 to 5, characterized in that: The atomic layer deposition method comprises the following steps: placing a substrate in the slide chamber; The operation carrier (1) is rotated, and when the wafer carrier chamber is connected to the source supply chamber, a precursor is introduced into the source supply chamber, and the substrate in the wafer carrier chamber absorbs the precursor; The operation carrier (1) continues to rotate, and when the opening of the source supply chamber is covered and blocked by the spacer (13), gas is introduced into the wafer carrier chamber to perform a purge operation on the substrate therein.

7. The atomic layer deposition method according to claim 6, characterized in that: The wafer carrier chamber comprises a first wafer carrier chamber (11) and a second wafer carrier chamber (12), the source supply chamber comprises a first source supply chamber (22) and a second source supply chamber (23), and the atomic layer deposition method comprises the following steps: Placing a substrate in the first substrate chamber (11) and the second substrate chamber (12); The working platform (1) is rotated, and when the first wafer carrier chamber (11) is connected to the first source supply chamber (22), a first precursor is introduced into the first source supply chamber (22), and the substrate in the first wafer carrier chamber (11) absorbs the first precursor; The working stage (1) is continuously rotated, and when all the openings of the source supply chambers are covered and blocked by the spacer (13), gas is introduced into the first wafer carrier chamber (11) to perform a purge operation on the substrate therein; The work carrier (1) continues to rotate, and when the first carrier chamber (11) and the second source supply chamber (23) are correspondingly connected, the second precursor is introduced into the second source supply chamber (23), and the substrate in the first carrier chamber (11) absorbs the second precursor; during this process, the second carrier chamber (12) is connected to the first source supply chamber (22), and the substrate in the second carrier chamber (12) absorbs the first precursor; The working stage (1) is continuously rotated, and when all the openings of the source supply chambers are covered and blocked by the spacer (13), gas is introduced into the first wafer carrier chamber (11) and the second wafer carrier chamber (12) to perform a purge operation on the substrate in the first wafer carrier chamber (11) and the substrate in the second wafer carrier chamber (12); The above steps are repeated until the substrate in the second wafer carrier chamber (12) adsorbs the second precursor and the second precursor is purged.

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