Solid-state imaging device and electronic device

Abstract

A solid-state imaging device is provided that can further improve the degree of freedom of design of the rewiring of the joint portion connecting the contact point between the solid-state imaging device and the module substrate on which the solid-state imaging device is mounted. The present invention provides a solid-state imaging device including a sensor substrate, a circuit substrate, a light-transmitting substrate, a first rewiring and a second rewiring. The sensor substrate includes: a first semiconductor substrate having a first main surface as a light incident side and a second main surface on the side opposite to the first main surface, and a two-dimensionally arranged light receiving element is formed on the first main surface; and a first wiring layer, the first wiring layer is formed on the second main surface of the first semiconductor substrate. The circuit substrate includes: a second semiconductor substrate having a third main surface as a light incident side and a fourth main surface on the side opposite to the third main surface, and a second wiring layer, the second wiring layer is formed on the third main surface of the second semiconductor substrate. The light-transmitting substrate is arranged above the light receiving element. The first rewiring is electrically connected to an internal electrode formed on the second wiring layer, and the second rewiring is formed on the fourth main surface side of the second semiconductor substrate. The first wiring layer of the sensor substrate and the second wiring layer of the circuit substrate are bonded to form a structure in which the sensor substrate and the circuit substrate are stacked.

Description

Technical Field

[0001] The present technology relates to a solid-state imaging device and an electronic device. Background Art

[0002] In a camera module to be used in a smartphone or the like, the camera module is required to be smaller and thinner to make the smartphone smaller and thinner.

[0003] For example, a technology for miniaturizing a solid-state imaging device using a packaging technology with a chip size package has been proposed (see Patent Document 1).

[0004] Reference List

[0005] Patent Literature

[0006] Patent Document 1: Japanese Patent Application Publication No. 2015-135938 Summary of the invention

[0007] Problem that the invention aims to solve

[0008] However, with the technology proposed in Patent Document 1, it is possible that the design freedom of rewiring connected to a joint (e.g., such as a connection terminal, etc.) which is a contact point between a solid-state imaging device and a module substrate on which the solid-state imaging device is mounted cannot be further improved.

[0009] Therefore, the present technology has been developed in view of such circumstances, and a main object thereof is to provide a solid-state imaging device capable of further improving the degree of freedom of rewiring design and an electronic device equipped with the solid-state imaging device.

[0010] Solution to the problem

[0011] As a result of intensive studies conducted to achieve the above-mentioned purpose, the present inventors have succeeded in further improving the degree of freedom in designing rewiring included in the solid-state imaging device, and have completed the present technology.

[0012] Specifically, as a first aspect, the present technology provides,

[0013] A solid-state imaging device comprising:

[0014] a semiconductor substrate having a first main surface on a light incident side and a second main surface on a side opposite to the first main surface, light receiving elements being two-dimensionally arranged on the first main surface;

[0015] a light-transmitting substrate disposed above the light-receiving element;

[0016] a wiring layer formed on the second main surface of the semiconductor substrate;

[0017] a first rewiring line electrically connected to an internal electrode formed in the wiring layer; and

[0018] A second rewiring is formed on the second main surface side of the semiconductor substrate.

[0019] In the solid-state imaging device according to the first aspect of the present technology,

[0020] The second rewiring may be disposed below the first rewiring.

[0021] In the solid-state imaging device according to the first aspect of the present technology,

[0022] The first rewiring may be formed by a plurality of first rewirings,

[0023] The second rewiring may be formed of a plurality of second rewirings, and

[0024] At least one first rewiring line among the plurality of first rewiring lines and at least one second rewiring line among the plurality of second rewiring lines may be connected.

[0025] In the solid-state imaging device according to the first aspect of the present technology,

[0026] The first rewiring may be formed by a plurality of first rewirings,

[0027] The second rewiring may be formed by a plurality of second rewirings,

[0028] The wiring layer may include a plurality of signal lines formed along a predetermined direction, and

[0029] The plurality of first rewiring lines and the plurality of second rewiring lines may be arranged to generate a plurality of magnetic fields having magnetic field directions different from each other in a region between two adjacent signal lines among the plurality of signal lines.

[0030] In the solid-state imaging device according to the first aspect of the present technology,

[0031] There may be at least one pair formed by one first rewiring line among the plurality of first rewiring lines and one second rewiring line among the plurality of second rewiring lines in the vertical direction, and,

[0032] In the pair, a direction of a first current flowing in the one first rewiring and a direction of a second current flowing in the one second rewiring may be opposite to each other.

[0033] In the solid-state imaging device according to the first aspect of the present technology,

[0034] The first rewiring may be formed by a plurality of first rewirings,

[0035] The second rewiring may be formed by a plurality of second rewirings,

[0036] The wiring layer may include a plurality of signal lines formed along a predetermined direction, and

[0037] When viewed from a side opposite to the light incident side, at least one first rewiring line of the plurality of first rewiring lines and / or at least one second rewiring line of the plurality of second rewiring lines may cover at least a portion of at least one signal line of the plurality of signal lines.

[0038] In the solid-state imaging device according to the first aspect of the present technology,

[0039] The first rewiring may be formed by a plurality of first rewirings,

[0040] A groove portion may be formed on the second main surface side of the semiconductor substrate, and

[0041] At least a portion of at least one first rewiring line of the plurality of first rewiring lines may be formed in the groove portion.

[0042] In the solid-state imaging device according to the first aspect of the present technology,

[0043] The depth of the groove portion may be equal to or greater than a thickness of at least one first rewiring line of the plurality of first rewiring lines.

[0044] As a second aspect, the present technology also provides,

[0045] A solid-state imaging device comprising:

[0046] A sensor substrate comprising:

[0047] a first semiconductor substrate having a first main surface on a light incident side and a second main surface on a side opposite to the first main surface, on which light receiving elements are two-dimensionally arranged; and

[0048] a first wiring layer formed on the second main surface of the first semiconductor substrate;

[0049] A circuit substrate, comprising:

[0050] a second semiconductor substrate having a third main surface on the light incident side and a fourth main surface on the side opposite to the third main surface; and

[0051] a second wiring layer formed on the third main surface of the second semiconductor substrate;

[0052] a light-transmitting substrate disposed above the light-receiving element;

[0053] a first rewiring line electrically connected to an internal electrode formed in the second wiring layer; and

[0054] a second rewiring formed on the fourth main surface side of the second semiconductor substrate,

[0055] The first wiring layer of the sensor substrate and the second wiring layer of the circuit substrate are bonded to form a stacked structure of the sensor substrate and the circuit substrate.

[0056] In the solid-state imaging device according to the second aspect of the present technology,

[0057] The second rewiring may be disposed below the first rewiring.

[0058] In the solid-state imaging device according to the second aspect of the present technology,

[0059] The first rewiring may be formed by a plurality of first rewirings,

[0060] The second rewiring may be formed of a plurality of second rewirings, and

[0061] At least one first rewiring line among the plurality of first rewiring lines and at least one second rewiring line among the plurality of second rewiring lines may be connected.

[0062] In the solid-state imaging device according to the second aspect of the present technology,

[0063] The first rewiring may be formed by a plurality of first rewirings,

[0064] The second rewiring may be formed by a plurality of second rewirings,

[0065] The second wiring layer may include a plurality of signal lines formed along a predetermined direction, and

[0066] The plurality of first rewiring lines and the plurality of second rewiring lines may be arranged to generate a plurality of magnetic fields having magnetic field directions different from each other in a region between two adjacent signal lines among the plurality of signal lines.

[0067] In the solid-state imaging device according to the second aspect of the present technology,

[0068] There may be at least one pair formed by one first rewiring line among the plurality of first rewiring lines and one second rewiring line among the plurality of second rewiring lines in the vertical direction, and,

[0069] In the pair, a direction of a first current flowing in the one first rewiring and a direction of a second current flowing in the one second rewiring may be opposite to each other.

[0070] In the solid-state imaging device according to the second aspect of the present technology,

[0071] The first rewiring may be composed of a plurality of first rewirings.

[0072] The second rewiring may be composed of a plurality of second rewirings.

[0073] The second wiring layer may include a plurality of signal lines formed along a predetermined direction, and

[0074] When viewed from a side opposite to the light incident side, at least one first rewiring line of the plurality of first rewiring lines and / or at least one second rewiring line of the plurality of second rewiring lines may cover at least a portion of at least one signal line of the plurality of signal lines.

[0075] In the solid-state imaging device according to the second aspect of the present technology,

[0076] The first rewiring may be formed by a plurality of first rewirings,

[0077] A groove portion may be formed on the fourth main surface side of the second semiconductor substrate, and

[0078] At least a portion of at least one first rewiring line of the plurality of first rewiring lines may be formed in the groove portion.

[0079] In the solid-state imaging device according to the second aspect of the present technology,

[0080] The depth of the groove portion may be equal to or greater than a thickness of at least one first rewiring line of the plurality of first rewiring lines.

[0081] The present technology further provides an electronic device mounted with the solid-state imaging device according to the first aspect of the present technology or the solid-state imaging device according to the second aspect of the present technology.

[0082] Effects of the Invention

[0083] According to the present technology, the degree of freedom in designing rewiring included in the solid-state imaging device can be further improved. Note that the effects of the present technology are not limited to the effects described here, and may include any effects described in the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0084] Figure 1 is a sectional view showing a configuration example of a solid-state imaging device to which the present technology is applied.

[0085] Figure 2 This is a cross-sectional view for explaining a method for manufacturing a solid-state imaging device to which the present technology is applied.

[0086] Figure 3 This is a cross-sectional view for explaining a method for manufacturing a solid-state imaging device to which the present technology is applied.

[0087] Figure 4 This is a cross-sectional view for explaining a method for manufacturing a solid-state imaging device to which the present technology is applied.

[0088] Figure 5 This is a cross-sectional view for explaining a method for manufacturing a solid-state imaging device to which the present technology is applied.

[0089] Figure 6 This is a cross-sectional view for explaining a method for manufacturing a solid-state imaging device to which the present technology is applied.

[0090] Figure 7 This is a cross-sectional view for explaining a method for manufacturing a solid-state imaging device to which the present technology is applied.

[0091] Figure 8 This is a cross-sectional view for explaining a method for manufacturing a solid-state imaging device to which the present technology is applied.

[0092] Fig. 9 This is a cross-sectional view for explaining a method for manufacturing a solid-state imaging device to which the present technology is applied.

[0093] Fig.10 is a diagram showing a configuration example of a solid-state imaging device to which the present technology is applied.

[0094] Fig.11 is a plan view of a configuration example of a plurality of first rewiring lines included in a solid-state imaging device to which the present technology is applied.

[0095] Fig.12 is a plan view of a configuration example of a plurality of second rewiring lines included in a solid-state imaging device to which the present technology is applied.

[0096] Fig.13 : is a sectional view showing a configuration example of a plurality of first rewiring lines and a configuration example of a plurality of second rewiring lines included in a solid-state imaging device to which the present technology is applied.

[0097] Fig.14 It is a perspective view of a configuration example of a plurality of first rewiring lines, a plurality of second rewiring lines, and a plurality of signal lines included in a solid-state imaging device to which the present technology is applied.

[0098] Fig.15 is a sectional view showing a configuration example of a solid-state imaging device to which the present technology is applied.

[0099] Fig.16 is a sectional view showing a configuration example of a solid-state imaging device to which the present technology is applied.

[0100] Fig.17 This is a cross-sectional view for explaining a method for manufacturing a solid-state imaging device to which the present technology is applied.

[0101] Fig.18 This is a cross-sectional view for explaining a method for manufacturing a solid-state imaging device to which the present technology is applied.

[0102] Fig.19 This is a cross-sectional view for explaining a method for manufacturing a solid-state imaging device to which the present technology is applied.

[0103] Fig. 20 This is a cross-sectional view for explaining a method for manufacturing a solid-state imaging device to which the present technology is applied.

[0104] Fig.21 This is a cross-sectional view for explaining a method for manufacturing a solid-state imaging device to which the present technology is applied.

[0105] Fig. 22 This is a cross-sectional view for explaining a method for manufacturing a solid-state imaging device to which the present technology is applied.

[0106] Fig.23 This is a cross-sectional view for explaining a method for manufacturing a solid-state imaging device to which the present technology is applied.

[0107] Fig.24 This is a cross-sectional view for explaining a method for manufacturing a solid-state imaging device to which the present technology is applied.

[0108] Fig.25 This is a cross-sectional view for explaining a method for manufacturing a solid-state imaging device to which the present technology is applied.

[0109] Fig.26 is a sectional view showing a configuration example of a solid-state imaging device to which the present technology is applied.

[0110] Fig. 27 It is a diagram showing a use example of a solid-state imaging device to which the first to fifth embodiments of the present technology are applied.

[0111] Fig.28 is a functional block diagram of an example of an electronic device according to a sixth embodiment to which the present technology is applied.

[0112] Fig.29 is a diagram schematically showing a configuration example of an endoscopic surgery system.

[0113] Fig.30 is a block diagram showing an example of the functional configuration of a camera head and a CCU.

[0114] Fig.31 is a block diagram schematically showing a configuration example of a vehicle control system.

[0115] Fig.32 : is an explanatory diagram showing an example of the installation positions of the vehicle exterior information detector and the imaging unit. DETAILED DESCRIPTION

[0116] The following is a description of a preferred embodiment for implementing the present technology. The embodiments described below are typical examples of embodiments of the present technology and do not narrow the interpretation of the scope of the present technology. It should be noted that "up" refers to the upward direction or upper side in the drawings, "down" refers to the downward direction or lower side in the drawings, "left" refers to the left direction or left side in the drawings, and "right" refers to the right direction or right side in the drawings, unless otherwise specified. In addition, in the drawings, the same or equivalent parts or elements are represented by the same figure marks, and their description will not be repeated.

[0117] The description will be given in the following order.

[0118] 1. Overview of this technology

[0119] 2. First Embodiment (Example 1 of Solid-State Imaging Device)

[0120] 3. Second Embodiment (Example 2 of Solid-State Imaging Device)

[0121] 4. Third Embodiment (Example 3 of Solid-State Imaging Device)

[0122] 5. Fourth Embodiment (Example 4 of Solid-State Imaging Device)

[0123] 6. Fifth Embodiment (Example 5 of Solid-State Imaging Device)

[0124] 7. Sixth Embodiment (Example of Electronic Equipment)

[0125] 8. Example of use of a solid-state imaging device using this technology

[0126] 9. Application examples of endoscopic surgery systems

[0127] 10. Application examples for mobile objects

[0128] <1. Overview of this technology>

[0129] First, an overview of the present technology will be described.

[0130] For example, a chip size package type solid-state imaging device is composed of a sensor substrate (also referred to as an image sensor substrate, which will be applicable to the following description) that forms a pixel area and a circuit substrate (e.g., a logic circuit substrate) that processes a pixel signal output from a pixel unit. A photoelectric conversion unit (e.g., a photodiode (PD)) is formed in a semiconductor substrate included in the sensor substrate, and a light-transmitting substrate is formed on an on-chip lens disposed above the semiconductor substrate included in the sensor substrate via an adhesive layer. Further, a rewiring is disposed below the circuit substrate (on the side opposite to the light incident side) so that the terminal connected to the module substrate is taken out. For example, the rewiring as the wiring connected to the connection terminal here is composed of a single-layer metal film, and the design freedom of the rewiring may be low.

[0131] For example, there is also a technology for forming a rewiring having a double-layer structure. This technology is not used for solid-state imaging devices. Since this technology is designed to take out the terminals for module connection from the main surface side of the device, this technology is different from the technology for solid-state imaging devices with rewiring in through holes formed in a silicon substrate (semiconductor substrate) with a thickness of the order of hundreds of microns in the order of thickness of the rewiring. In some cases, in order to apply this technology to solid-state imaging devices, it is necessary to make great changes to the interlayer film structure and manufacturing method between the stacked rewiring.

[0132] Furthermore, in a solid-state imaging device, noise may be added to an output signal from a pixel due to the structure and layout of the rewiring. Therefore, in some cases, the rewiring must be formed in consideration of the influence on the imaging characteristics.

[0133] The present technology has been developed in view of the above circumstances. According to the present technology, in a chip size package type solid-state imaging device, the degree of freedom of rewiring layout can be increased or imaging characteristics can be improved, and further, the degree of freedom of rewiring layout and the imaging characteristics can be improved at the same time.

[0134] Furthermore, in the solid-state imaging device according to the present technology, the wiring connected to the connection terminal is formed by a multilayer rewiring formed on the side of the substrate opposite to the surface on the light incident side where the light-transmitting substrate is provided. By this arrangement, the design freedom of the rewiring can be improved, and further, the image noise can be reduced by the layout of the rewiring in the stacked structure.

[0135] In the following description, embodiments according to the present technology will be described in detail.

[0136] <2. First Embodiment (Example 1 of Solid-State Imaging Device)>

[0137] A solid-state imaging device according to a first embodiment of the present technology (Example 1 of a solid-state imaging device) includes: a sensor substrate including a first semiconductor substrate having a first main surface on a light incident side and a second main surface on a side opposite to the first main surface (a light receiving element is formed and arranged two-dimensionally on the first main surface) and a first wiring layer formed on the second main surface of the first semiconductor substrate; a circuit substrate including a second semiconductor substrate having a third main surface on a light incident side and a fourth main surface on a side opposite to the third main surface and a second wiring layer formed on the third main surface of the second semiconductor substrate; a light-transmitting substrate disposed above the light receiving element; a first rewiring electrically connected to an internal electrode formed in the second wiring layer; and a second rewiring formed on the fourth main surface side of the second semiconductor substrate. In the solid-state imaging device, the first wiring layer of the sensor substrate and the second wiring layer of the circuit substrate are bonded to form a stacked structure of the sensor substrate and the circuit substrate.

[0138] In the solid-state imaging device according to the first embodiment of the present technology (Example 1 of the solid-state imaging device), the second rewiring may be provided below the first rewiring. In addition, in the solid-state imaging device according to the first embodiment of the present technology (Example 1 of the solid-state imaging device), the first rewiring may be formed of a plurality of first rewirings, the second rewiring may be formed of a plurality of second rewirings, and at least one of the plurality of first rewirings and at least one of the plurality of second rewirings may be connected.

[0139] By the solid-state imaging device according to the first embodiment of the present technology (Example 1 of the solid-state imaging device), the degree of freedom of rewiring layout can be increased or the imaging characteristics can be improved, and further, the increase in the degree of freedom of rewiring layout and the improvement in imaging characteristics can be achieved at the same time. By the solid-state imaging device according to the first embodiment of the present technology (Example 1 of the solid-state imaging device), the degree of freedom of rewiring design can be increased, and further, image noise can be reduced by the rewiring layout of the stacked structure.

[0140] In the following description, reference is made to Figures 1 to 10 , a solid-state imaging device according to a first embodiment of the present technology is described in more detail.

[0141] Figure 1 It is a cross-sectional view showing a configuration example of a solid-state imaging device according to a first embodiment of the present technology, and more specifically, it is a cross-sectional view showing the structure of a solid-state imaging device of a first embodiment having a rewiring chip size packaging structure including a stacked structure. Figures 2 to 10It is a cross-sectional view used to illustrate a method for manufacturing a solid-state imaging device according to a first embodiment of the present technology, and more specifically, it is a cross-sectional view used to illustrate a method for manufacturing a solid-state imaging device according to a first embodiment of a chip size packaging structure having a rewiring structure including a stacked structure.

[0142] First, refer to Figure 1 Provide explanation. Figure 1 The solid-state imaging device 1 includes a sensor substrate 4000 having a first semiconductor substrate 102 and a first wiring layer 101 , a circuit substrate 5000 having a second semiconductor substrate 109 and a second wiring layer 107 , a first rewiring 110 and a second rewiring 112 as main components.

[0143] exist Figure 1 In the solid-state imaging device 1 shown, a light receiving element (e.g., a photodiode in a photoelectric conversion region) 102a for obtaining an imaging signal is formed in a first main surface P1 of a first semiconductor substrate 102. Then, a microlens 103 arranged in a light receiving region R is provided on the light receiving element (e.g., a photodiode formed in a photoelectric conversion region) 102a, a planarization layer 104 for planarizing a portion on the microlens 103 is formed, and a light-transmitting substrate (e.g., a transparent protective substrate) 106 is provided on the planarization layer 104 via an adhesive layer 105.

[0144] The circuit substrate 5000 that receives signals from pixels and performs signal processing and includes a second semiconductor substrate 109 (also referred to as a circuit substrate silicon unit) and a second wiring layer (also referred to as a circuit substrate wiring unit) 107 formed on the third main surface P3 of the second semiconductor substrate is connected to the lower portion (also referred to as the image sensor substrate wiring unit) 101 formed on the second main surface P2 of the first semiconductor substrate 102 Figure 1 ), and the second wiring layer (circuit substrate wiring unit) 107 and the first wiring layer (image sensor substrate wiring unit) 101 are connected to each other via connecting parts 700-1 and 700-2, so that the sensor substrate 4000 and the circuit substrate 5000 are electrically connected to each other.

[0145] Further, an internal electrode 108 is formed in the second wiring layer (circuit substrate wiring unit) 107, and a first rewiring 110 is formed through the second semiconductor substrate (circuit substrate silicon unit) 109 and the second wiring layer (circuit substrate wiring unit) 107. On the first rewiring 110, a second rewiring 112 is formed on the fourth main surface P4 side of the second semiconductor substrate via the first interlayer insulating film 111. In the lower part of the second rewiring 112, a solder bump 114 is formed in an insulating film opening formed in a part of the second interlayer insulating film 113. The solder bump 114 serves as a connection contact with an external module substrate, so that a rewiring solid-state imaging device including a double-layer structure formed by the first rewiring 110 and the second rewiring 112 can be formed. The first interlayer insulating film 111 and the second interlayer insulating film 113 may include the same material, or may include different materials.

[0146] The first rewiring 110 includes a first component 110-1, a third component 110-3 and a fourth component 110-4 substantially parallel to the third main surface P3 and the fourth main surface P4 of the second semiconductor substrate 109, and a second component 110-2 and a fifth component 110-5 substantially perpendicular to the third main surface P3 and the fourth main surface P4 of the second semiconductor substrate.

[0147] The second rewiring 112 includes a first component 112 - 1 , a second component 112 - 2 , and a third component 112 - 3 that are substantially parallel to the fourth main surface P4 of the second semiconductor substrate 109 .

[0148] Then, the first feature 110 - 1 of the first rewiring 110 and the internal electrode 108 are connected, the fourth feature 110 - 4 of the first rewiring and the first feature 112 - 1 of the second rewiring are connected, and the second rewiring 112 and the solder bump 114 are connected.

[0149] In the solid-state imaging device 1 according to the first embodiment of the present technology, a rewiring of a double-layer structure formed of the first rewiring 110 and the second rewiring 112 is formed in the rewiring, and therefore, the degree of freedom of layout can be improved. Further, in the solid-state imaging device 1 according to the first embodiment of the present technology, for example, as the degree of freedom of design of the rewiring becomes higher, the solder bump can be set in a desired area of ​​each chip, and the connection strength can be advantageously improved when bonding with the module.

[0150] Here, a specific manufacturing method must be used to form the rewiring of the double-layer structure in the solid-state imaging device 1 described above. Figures 2 to 10 The method of manufacturing the solid-state imaging device 1 will be described in detail.

[0151] First, if Figure 2 As shown in FIG. 1 , a structure is prepared in which a sensor substrate 4000 and a circuit substrate 5000 are connected to each other, the sensor substrate 4000 outputs an image signal through photoelectric conversion, and the circuit substrate 5000 receives the signal from the sensor substrate 4000 and performs signal processing. The sensor substrate 4000 and the circuit substrate 5000 are electrically connected to each other via wiring layers (first wiring layer 201 and second wiring layer 207) formed in each substrate. The portion ( Figure 2 A light-transmitting substrate (for example, a transparent protective substrate) 206 is formed on the planarization film 204 on the microlens 203 formed in the upper side of the planarization film 204 (in the upper side).

[0152] Next, a through hole 215 ( Figure 3 ).

[0153] Then, a first rewiring 210 ( Figure 4 ). It should be pointed out that although Figure 4 Although not shown in the figure, an insulating film may be formed at the boundary portion between the first rewiring 210 and the second semiconductor substrate (circuit substrate silicon unit) 209 so as not to cause an electrical short circuit. The first rewiring 210 is formed of a copper film or the like by an electrolytic plating technique using a mask including a resist material having an opening pattern in a desired region, and the film thickness of the first rewiring 210 is several micrometers to several tens of micrometers.

[0154] Next, the first rewiring 210 ( Figure 5 ). A solder resist or the like as an organic material may be used as the first interlayer insulating film 211. Further, in the next step, preferably, a photosensitive solder resist is used as the first interlayer insulating film 211 to form an insulating film opening serving as a portion connected to the second rewiring 212.

[0155] Then, an insulating film opening 216 is formed in the first interlayer insulating film 211 ( Figure 6 At this time, when the first interlayer insulating film 211 is a photosensitive material, an opening can be formed by photolithography. When a material film other than a photosensitive material is used, an opening can be formed by dry etching using a mask as a resist pattern formed by photolithography.

[0156] Next, a second rewiring 212 ( Figure 7). The second rewiring 212 is formed of a copper film or the like by an electrolytic plating technique using a mask including a resist material having an opening pattern in a predetermined region, and the film thickness of the second rewiring 212 is several micrometers to several tens of micrometers.

[0157] Then, the second rewiring 212 ( Figure 8 ). A solder resist or the like as an organic material may be used as the second interlayer insulating film 213. Further, in the next step, preferably, a photosensitive solder resist is used as the second interlayer insulating film 213 to form an insulating film opening for setting a solder bump or the like serving as a portion connected to the module substrate.

[0158] Next, an insulating film opening 217 is formed in the second interlayer insulating film 213 ( Fig. 9 ).

[0159] Finally, solder bumps 214 are formed on the second rewiring 212 exposed through the insulating film opening formed in the second interlayer insulating film 213, and thus, the solid-state imaging device 1 ( Fig.10 ).

[0160] Here, the solder bump is a joint portion used as a contact point between the solid-state imaging device and the module substrate on which the solid-state imaging device is mounted. The solder bump is formed by providing a spherical solder material and subjecting the solder material to a heat treatment so that the solder material is formed into a bump shape. However, the solder bump can also be formed by performing an electroplating technique on the opening formed in the second interlayer insulating film 213 to form a metal material such as copper or nickel.

[0161] When forming the first rewiring 210 and the second rewiring 212 of the stacked structure of the solid-state imaging device 1 described above, a connection opening is formed using a photosensitive solder resist in the interlayer insulating film 211 covering the first rewiring 210 and the interlayer insulating film 213 covering the second rewiring 212. However, this is a manufacturing method that can be used in the formation of rewiring peculiar to a solid-state imaging device in which the wiring width of the first rewiring 210 and / or the second rewiring 212 is as wide as several tens of micrometers, and discloses materials and manufacturing methods that are different from those of the micron-level rewiring forming technology of a conventional semiconductor device.

[0162] In addition to the contents described above, the contents to be explained below in the description of the solid-state imaging device according to the second to fourth embodiments of the present technology can be applied as is to the solid-state imaging device according to the first embodiment of the present technology unless there is some technical contradiction.

[0163] <3. Second Embodiment (Example 2 of Solid-State Imaging Device)>

[0164] A solid-state imaging device according to a second embodiment of the present technology (Example 2 of a solid-state imaging device) includes: a sensor substrate including a first semiconductor substrate having a first main surface on a light incident side and a second main surface on a side opposite to the first main surface (a light receiving element is formed and arranged two-dimensionally on the first main surface) and a first wiring layer formed on the second main surface of the first semiconductor substrate; a circuit substrate including a second semiconductor substrate having a third main surface on a light incident side and a fourth main surface on a side opposite to the third main surface and a second wiring layer formed on the third main surface of the second semiconductor substrate; a light-transmitting substrate disposed above the light receiving element; a first rewiring electrically connected to an internal electrode formed in the second wiring layer; and a second rewiring formed on the fourth main surface side of the second semiconductor substrate. In the solid-state imaging device, the first wiring layer of the sensor substrate and the second wiring layer of the circuit substrate are bonded to form a stacked structure of the sensor substrate and the circuit substrate. In addition, in a solid-state imaging device according to a second embodiment of the present technology (Example 2 of a solid-state imaging device), a first rewiring is formed by a plurality of first rewirings, a second rewiring is formed by a plurality of second rewirings, a wiring layer includes a plurality of signal lines formed along a predetermined direction, and the plurality of first rewirings and the plurality of second rewirings are arranged to generate a plurality of magnetic fields having magnetic field directions different from each other in an area between two adjacent signal lines among the plurality of signal lines.

[0165] Further, in a solid-state imaging device according to a second embodiment of the present technology (Example 2 of a solid-state imaging device), there is at least one pair formed by a first rewiring line among a plurality of first rewiring lines and a second rewiring line among a plurality of second rewiring lines in a vertical direction, and a direction of a first current flowing in a first rewiring line and a direction of a second current flowing in a second rewiring line are opposite to each other.

[0166] In the solid-state imaging device according to the second embodiment of the present technology (Example 2 of the solid-state imaging device), the second rewiring may be provided below the first rewiring. In addition, in the solid-state imaging device according to the second embodiment of the present technology (Example 2 of the solid-state imaging device), the first rewiring may be formed of a plurality of first rewirings, the second rewiring may be formed of a plurality of second rewirings, and at least one of the plurality of first rewirings and at least one of the plurality of second rewirings may be connected.

[0167] By the solid-state imaging device according to the second embodiment (Example 2 of the solid-state imaging device) of the present technology, the degree of freedom of rewiring layout can be increased or the imaging characteristics can be improved, and further, the increase in the degree of freedom of rewiring layout and the improvement in imaging characteristics can be achieved at the same time. By the solid-state imaging device according to the second embodiment (Example 2 of the solid-state imaging device) of the present technology, the degree of freedom of rewiring design can be increased, and further, image noise can be reduced by the rewiring layout of the stacked structure.

[0168] In the following description, reference is made to Figure 11 to Figure 14 , a solid-state imaging device according to a second embodiment of the present technology is described in more detail. Fig.11 is a plan view of a configuration example of a plurality of first rewiring lines included in a solid-state imaging device according to a second embodiment of the present technology. Fig.12 is a plan view of a configuration example of a plurality of second rewiring lines included in a solid-state imaging device according to a second embodiment of the present technology. Fig.13 : is a sectional view showing a configuration example of a plurality of first rewiring lines and a configuration example of a plurality of second rewiring lines included in a solid-state imaging device according to a second embodiment of the present technology. Fig.14 is a perspective view of a configuration example of a plurality of first rewiring lines, a plurality of second rewiring lines, and a plurality of signal lines included in a solid-state imaging device according to a second embodiment of the present technology.

[0169] In the solid-state imaging device of the second embodiment having the rewiring of the stacked structure, a layout unique to the solid-state imaging device can be used in the rewiring arrangement pattern. Fig.11 Provide explanation.

[0170] Fig.11 The first rewiring plan layout is schematically shown and Fig.11 In the example, power wiring 310a and GND wiring 310b are alternately arranged.

[0171] Fig.12 The second rewiring plan layout is schematically shown and Fig.12 In the example, the power supply wiring 312a and the GND wiring 312b are alternately arranged.

[0172] Fig.13 Shown with Fig.11 The A-A' line and Fig.12 BB' line shown in FIG. Fig.13The schematic diagram shows that in the wiring with · (dot) in the circle of the cross section of the power wiring 310a and 312a and the GND wiring 310b and 312b, the current flows from the back side of the figure to the front side, and in the wiring with × in the circle, the current flows from the front side of the figure to the back side. Fig.13 As shown in, for example, in the vertical direction ( Fig.13 In a pair 3000 formed by the first rewiring 310a and the second rewiring 312b adjacent to each other (in the vertical direction in the middle), the directions of the flowing currents are opposite to each other. It should be noted that Fig.13 It is disclosed that the current directions between all pairs of first rewiring lines and second rewiring lines adjacent to each other in the vertical direction are different, but some of the first rewiring lines may have a current direction different from that of other first rewiring lines.

[0173] exist Figure 11 to Figure 13 In the layout of the first rewiring and the second rewiring shown in FIG, the magnetic field generated by applying a current in each rewiring and the magnetic field generated in each adjacent rewiring (for example, the first rewiring and the second rewiring adjacent to each other in the vertical direction, the first wiring adjacent to each other in the horizontal direction, or the second wiring adjacent to each other in the horizontal direction) can cancel each other. The electromotive force generated in the signal wiring for transmitting the signal charge extracted from the pixel due to the magnetic field generated in the rewiring can be reduced, and therefore, the image noise generated by the electromotive force can be reduced.

[0174] As a specific example, Fig.14 The configuration of a plurality of first rewiring lines, a plurality of second rewiring lines, and a plurality of signal lines is shown. Fig.14 As shown in FIG. 1 , a second wiring layer (circuit substrate wiring unit) 207 is formed, and in the lower part ( Fig.14 A rewiring forming section 1000 is formed. A plurality of signal lines 317a to 317d are formed in the second wiring layer (circuit substrate wiring unit) 207, a plurality of first rewiring groups 3140 are formed in the rewiring forming section 1000, and below the plurality of first rewiring groups 3140 ( Fig.14 A plurality of second rewiring groups 3160 are formed on the lower side of the wiring board.

[0175] As a plurality of first rewiring groups 3140, the power wiring 314a and the GND wiring 314b are Fig.14 As a plurality of second rewiring groups 3160, GND wiring 316b and power wiring 316a are arranged alternately from the left side. Fig.14 That is, when the plurality of first rewiring groups 3140 and the plurality of second rewiring groups 3160 are viewed together (in Fig.14In vertical observation (in the vertical direction), a pair formed by one power wiring and one GND wiring has a double-layer structure, and a plurality of such pairs are provided. When the direction of the current in the power wiring in a pair and the direction of the current in the GND wiring are opposite to each other, in the region Uab between the adjacent signal lines 317a and 317b, in the region Ubc between the adjacent signal lines 317b and 317c, and in the region Ucd between the adjacent signal lines 317c and 317d, the magnetic fields generated by applying current can cancel each other. Therefore, image noise can be reduced.

[0176] In addition to the contents described above, the contents described in the description of the solid-state imaging device according to the first embodiment of the present technology and the contents to be described below in the description of the solid-state imaging device according to the third and fourth embodiments of the present technology can be applied as is to the solid-state imaging device according to the second embodiment of the present technology unless there are some technical contradictions.

[0177] <4. Third Embodiment (Example 3 of Solid-State Imaging Device)>

[0178] A solid-state imaging device according to a third embodiment of the present technology (Example 3 of a solid-state imaging device) includes: a sensor substrate including a first semiconductor substrate having a first main surface on a light incident side and a second main surface on a side opposite to the first main surface (a light receiving element is formed and arranged two-dimensionally on the first main surface) and a first wiring layer formed on the second main surface of the first semiconductor substrate; a circuit substrate including a second semiconductor substrate having a third main surface on a light incident side and a fourth main surface on a side opposite to the third main surface and a second wiring layer formed on the third main surface of the second semiconductor substrate; a light-transmitting substrate disposed above the light receiving element; a first rewiring electrically connected to an internal electrode formed in the second wiring layer; and a second rewiring formed on the fourth main surface side of the second semiconductor substrate. In the solid-state imaging device, the first wiring layer of the sensor substrate and the second wiring layer of the circuit substrate are bonded to form a stacked structure of the sensor substrate and the circuit substrate. Further, in a solid-state imaging device according to a third embodiment of the present technology (Example 3 of a solid-state imaging device), a first rewiring is formed by a plurality of first rewirings, a second rewiring is formed by a plurality of second rewirings, the wiring layer includes a plurality of signal lines formed along a predetermined direction, and when viewed from the side opposite to the light incident side, at least one first rewiring of the plurality of first rewirings and / or at least one second rewiring of the plurality of second rewirings covers at least a portion of at least one signal line of the plurality of signal lines.

[0179] In the solid-state imaging device according to the third embodiment of the present technology (Example 3 of the solid-state imaging device), the second rewiring may be provided below the first rewiring. In addition, in the solid-state imaging device according to the third embodiment of the present technology (Example 3 of the solid-state imaging device), the first rewiring may be formed by a plurality of first rewirings, the second rewiring may be formed by a plurality of second rewirings, and at least one first rewiring of the plurality of first rewirings and at least one second rewiring of the plurality of second rewirings may be connected.

[0180] By a solid-state imaging device according to the third embodiment (Example 3 of the solid-state imaging device) of the present technology, the degree of freedom of rewiring layout can be increased or the imaging characteristics can be improved, and further, the increase in the degree of freedom of rewiring layout and the improvement in imaging characteristics can be achieved simultaneously. By a solid-state imaging device according to the third embodiment (Example 3 of the solid-state imaging device) of the present technology, the degree of freedom of rewiring design can be increased, and further, image noise can be reduced by rewiring layout of a stacked structure.

[0181] In the following description, reference is made to Fig.15 , a solid-state imaging device according to a third embodiment of the present technology will be described in more detail. Fig.15 It is a sectional view showing a configuration example of a solid-state imaging device according to a third embodiment of the present technology, and more specifically, it is a sectional view showing the structure of a solid-state imaging device of a second embodiment having a rewiring chip size packaging structure including a stacked structure.

[0182] Now refer to Fig.15 Provide explanation. Fig.15 A solid-state imaging device 3 is shown.

[0183] Fig.15 The signal line 418 formed in the second wiring layer (circuit substrate wiring unit) 407 is shown, and is designed to transfer signal charges from the sensor substrate 4000. Fig.15 As shown in FIG. 1 , the first rewiring 410b and the second rewiring 412b are provided in the region directly below the signal line 418 and are arranged to spatially overlap at least a portion of the region of the signal line 418. That is, when the light is incident from the side (the rear surface side, i.e. Fig.15 The side opposite to the upper side (front surface side, i.e. Fig.15 When viewed from the lower side of the signal line 418, the first rewiring 410b and the second rewiring 412b cover at least a portion of the signal line 418. Here, the first rewiring 410b and the second rewiring 412b disposed directly below the signal line 418 may be Fig.15 The circuit is fixed to a ground potential or the like at a position not shown in the figure.

[0184] The first rewiring 410a includes a first component 410a-1, a third component 410a-3 and a fourth component 410a-4 substantially parallel to the third main surface P3 and the fourth main surface P4 of the second semiconductor substrate 409, and a second component 410a-2 and a fifth component 410a-5 substantially perpendicular to the third main surface P3 and the fourth main surface P4 of the second semiconductor substrate 409.

[0185] The second rewiring 412 a includes a first component 412 a - 1 , a second component 412 a - 2 , and a third component 412 a - 3 that are substantially parallel to the fourth main face P4 of the second semiconductor substrate 409 .

[0186] Then, the first feature 410a-1 of the first rewiring 410a and the signal line 418 are connected, the third feature 410a-3 of the first rewiring and the first feature 412a-1 of the second rewiring are connected, and the second rewiring 412a and the solder bump 414 are connected.

[0187] Further, the first rewiring 410c includes a first component 410c-1, a third component 410c-3 and a fourth component 410c-4 substantially parallel to the third main surface P3 and the fourth main surface P4 of the second semiconductor substrate 409, and a second component 410c-2 and a fifth component 410c-5 substantially perpendicular to the third main surface P3 and the fourth main surface P4 of the second semiconductor substrate 409.

[0188] The second rewiring 412 c includes a first component 412 c - 1 , a second component 412 c - 2 , and a third component 412 c - 3 that are substantially parallel to the fourth main face P4 of the second semiconductor substrate 409 .

[0189] Then, the first feature 410c-1 of the first rewiring 410c and the internal electrode 408 are connected, the fourth feature 410c-4 of the first rewiring and the first feature 412c-1 of the second rewiring are connected, and the second rewiring 412c and the solder bump 414 are connected.

[0190] For example, Fig.15 The layout of the first rewiring 410b and the second rewiring 412b shown in FIG protects the signal line 418 from the magnetic field from the module substrate connected to the solid-state imaging device 3, and therefore, the noise of the pixel signal can be reduced. Further, as the first rewiring 410b and the second rewiring 412b are arranged in the area just below the power supply, GND wiring, etc. of the pixel, the magnetic field from the solid-state imaging device 3 can be prevented from affecting the circuit mounted on the module substrate.

[0191] In addition to the contents described above, the contents described in the description of the solid-state imaging device according to the first and second embodiments of the present technology and the contents to be described below in the description of the solid-state imaging device according to the fourth embodiment of the present technology can be applied as is to the solid-state imaging device according to the third embodiment of the present technology unless there are some technical contradictions.

[0192] <5. Fourth Embodiment (Example 4 of Solid-State Imaging Device)>

[0193] A solid-state imaging device according to a fourth embodiment of the present technology (Example 4 of a solid-state imaging device) includes: a sensor substrate including a first semiconductor substrate having a first main surface on a light incident side and a second main surface on a side opposite to the first main surface (a light receiving element is formed and arranged two-dimensionally on the first main surface) and a first wiring layer formed on the second main surface of the first semiconductor substrate; a circuit substrate including a second semiconductor substrate having a third main surface on a light incident side and a fourth main surface on a side opposite to the third main surface and a second wiring layer formed on the third main surface of the second semiconductor substrate; a light-transmitting substrate disposed above the light receiving element; a first rewiring electrically connected to an internal electrode formed in the second wiring layer; and a second rewiring formed on the fourth main surface side of the second semiconductor substrate. In the solid-state imaging device, the first wiring layer of the sensor substrate and the second wiring layer of the circuit substrate are bonded to form a stacked structure of the sensor substrate and the circuit substrate. In addition, in a solid-state imaging device according to a fourth embodiment of the present technology (Example 4 of a solid-state imaging device), a first rewiring is formed by a plurality of first rewirings, a groove portion is formed on the fourth main surface side of the second semiconductor substrate, and at least a portion of at least one of the plurality of first rewirings is formed in the groove portion.

[0194] Further, in the solid-state imaging device according to the fourth embodiment (Example 4 of the solid-state imaging device) of the present technology, preferably, the depth of the groove portion is not less than the thickness of at least one first rewiring line of the plurality of first rewiring lines.

[0195] In the solid-state imaging device according to the fourth embodiment of the present technology (Example 4 of the solid-state imaging device), the second rewiring may be provided below the first rewiring. In addition, in the solid-state imaging device according to the fourth embodiment of the present technology (Example 4 of the solid-state imaging device), the first rewiring may be formed by a plurality of first rewirings, the second rewiring may be formed by a plurality of second rewirings, and at least one of the plurality of first rewirings and at least one of the plurality of second rewirings may be connected.

[0196] By using a solid-state imaging device according to the fourth embodiment (Example 4 of the solid-state imaging device) of the present technology, the degree of freedom of rewiring layout can be increased or the imaging characteristics can be improved, and further, the increase in the degree of freedom of rewiring layout and the improvement in imaging characteristics can be achieved simultaneously. By using a solid-state imaging device according to the fourth embodiment (Example 4 of the solid-state imaging device) of the present technology, the degree of freedom of rewiring design can be increased, and further, image noise can be reduced by rewiring layout of a stacked structure.

[0197] In the following description, reference is made to Figure 16 to Figure 26 , a solid-state imaging device according to a fourth embodiment of the present technology is described in more detail. Fig.16 It is a sectional view showing a configuration example of a solid-state imaging device according to a fourth embodiment of the present technology, and more specifically, it is a sectional view showing the structure of a solid-state imaging device of a fourth embodiment having a rewiring chip size packaging structure including a stacked structure. Figures 17 to 26 It is a cross-sectional view used to illustrate a method for manufacturing a solid-state imaging device according to a fourth embodiment of the present technology, and more specifically, it is a cross-sectional view used to illustrate a method for manufacturing a solid-state imaging device according to a fourth embodiment having a rewiring chip size packaging structure including a stacked structure.

[0198] First, refer to Fig.16 Provide explanation. Fig.16 A solid-state imaging device 4 is shown. In the solid-state imaging device 4, when the rewiring becomes a stacked structure, the thickness of the solid-state imaging device increases by an amount equal to the thickness of the rewiring and the thickness of the interlayer insulating film between the rewiring. Therefore, the thickness of the entire camera module using the solid-state imaging device increases. In view of this problem, a structure (reduced structure) capable of reducing the thickness of a solid-state imaging device using a stacked rewiring structure can be provided.

[0199] Fig.16 The structure of the solid-state imaging device 4 shown in Figure 1 The difference between the structures of the solid-state imaging device 1 shown in FIG. 1 is that the silicon recessed portions S1 to S3 are formed in the second wiring layer (circuit substrate silicon unit) 509 serving as a formation region of three first rewirings 510. Fig.16 In the embodiment, the silicon recesses S1 to S3 have depths d1 to d3 equal to or greater than the thicknesses T1 to T3 of the first rewiring 510. It should be noted that the depths d1 to d3 of the silicon recesses S1 to S3 may be less than the thicknesses T1 to T3 of the first rewiring 510.

[0200] By the structure of the solid-state imaging device 4 according to this embodiment, even when stacked rewiring is adopted, the increase in thickness of the solid-state imaging device can be suppressed, and therefore, the thickness of the entire camera module using the solid-state imaging device can also be reduced.

[0201] The first rewiring 510 includes a first component 510-1, a third component 510-3 and a fourth component 510-4 substantially parallel to the third main surface P3 and the fourth main surface P4 of the second semiconductor substrate 509, and a second component 510-2 and a fifth component 510-5 substantially perpendicular to the third main surface P3 and the fourth main surface P4 of the second semiconductor substrate 509.

[0202] The second rewiring 512 includes a first component 512 - 1 , a second component 512 - 2 , and a third component 512 - 3 that are substantially parallel to the fourth main face P4 of the second semiconductor substrate 509 .

[0203] Then, the first feature 510 - 1 of the first rewiring 510 and the internal electrode 508 are connected, the fourth feature 510 - 4 of the first rewiring and the first feature 512 - 1 of the second rewiring are connected, and the second rewiring 512 and the solder bump 514 are connected.

[0204] Specifically, the thickness T1 of the first rewiring 510 (the same applies to T2 and T3) is the thickness of the third component 510-3 and / or the fourth component 510-4 of the first rewiring 510 ( Fig.16 length in the vertical direction).

[0205] Next, refer to Figures 17 to 26 , a method for manufacturing the solid-state imaging device 4 is described.

[0206] First, if Fig.17 As shown in FIG. 1 , a structure in which a sensor substrate 4000 and a circuit substrate 5000 are connected to each other is prepared, the sensor substrate 4000 outputs an image signal through photoelectric conversion, and the circuit substrate 5000 receives the signal from the sensor substrate 4000 and performs signal processing. The sensor substrate 4000 and the circuit substrate 5000 are electrically connected via wiring portions (a first wiring layer 601 and a second wiring layer 607) formed in each substrate, and a light-transmitting substrate (e.g., a transparent protective substrate) 606 is formed on a planarization film 604 on a microlens 603 formed above a photoelectric conversion region 602 via an adhesive layer 605.

[0207] Next, a silicon recess 614 ( Fig.18 ).

[0208] Next, a through hole 615 ( Fig.19 ).

[0209] Then, a first rewiring 610 ( Fig. 20 ). It should be pointed out that although Fig. 20 Although not shown in the figure, an insulating film may be formed at the boundary portion between the first rewiring 610 and the second semiconductor substrate (circuit substrate silicon unit) 609 so as not to cause an electrical short circuit. The first rewiring 610 is formed of a copper film or the like by an electrolytic plating technique using a mask including a resist material having an opening pattern in a predetermined area, and the film thickness of the first rewiring is several micrometers to several tens of micrometers.

[0210] Next, the first rewiring 610 ( Fig.21 ). A solder resist or the like as an organic material can be used as the first interlayer insulating film 611. Further, in the next step, preferably, a photosensitive solder resist is used as the first interlayer insulating film 611 to form an insulating film opening serving as a portion connected to the second rewiring 612.

[0211] Then, an insulating film opening 616 is formed in the first interlayer insulating film 611 ( Fig. 22 At this time, when the first interlayer insulating film 611 is a photosensitive material, an opening can be formed by photolithography. When a material film other than a photosensitive material is used, an opening can be formed by dry etching using a mask as a resist pattern formed by photolithography.

[0212] Next, a second rewiring 612 ( Fig.23 ). The second rewiring 612 is formed of a copper film or the like by an electrolytic plating technique using a mask including a resist material having an opening pattern in a predetermined region, and the film thickness of the second rewiring is several micrometers to several tens of micrometers.

[0213] Then, the second rewiring 612 ( Fig.24 ). A solder resist or the like as an organic material may be used as the second interlayer insulating film 613. Further, in the next step, preferably, a photosensitive solder resist is used as the second interlayer insulating film 613 to form an insulating film opening for setting a solder bump or the like serving as a portion connected to the module substrate.

[0214] Next, an insulating film opening 617 ( Fig.25Finally, a solder bump 614 is formed on the second rewiring 612 exposed through the insulating film opening formed in the second interlayer insulating film 613, and thus, the solid-state imaging device 4 ( Fig.26 ). Here, as in the solid-state imaging device 1 according to the first embodiment of the present technology, a metal material such as copper or nickel may be formed by an electroplating technique instead of the solder bump.

[0215] When forming the rewiring of the stacked structure in the solid-state imaging device 4 according to the fourth embodiment of the present technology, a silicon recess is formed in the second semiconductor substrate (circuit substrate silicon unit) 609 serving as the formation area of ​​the first rewiring 610, so that the thickness of the solid-state imaging device can be reduced by an amount equal to the thickness of the first rewiring 610, and the thickness of the entire camera module can be reduced. Therefore, the device using the camera module can be made smaller (particularly, the height can be reduced).

[0216] Furthermore, the processing time of the dry etching process can be shortened when forming a through hole serving as a connection portion between the first rewiring 610 and the internal electrode 608. Therefore, plasma damage caused by the dry etching process can be reduced, and fluctuations in device characteristics of transistors and the like formed in solid-state imaging devices and circuit substrates can also be reduced.

[0217] In addition to the above-described contents, the contents explained in the description of the solid-state imaging device according to the first to third embodiments of the present technology can be applied as is to the solid-state imaging device according to the fourth embodiment of the present technology unless there is some technical contradiction.

[0218] <6. Fifth Embodiment (Example 5 of Solid-State Imaging Device)>

[0219] The solid-state imaging device according to the fifth embodiment of the present technology (Example 5 of the solid-state imaging device) is a solid-state imaging device as follows, which includes: a semiconductor substrate having a first main surface on the light incident side and a second main surface on the side opposite to the first main surface, and light receiving elements are two-dimensionally arranged on the first main surface; a light-transmitting substrate, which is arranged above the light-receiving elements; a wiring layer, which is formed on the second main surface of the semiconductor substrate; a first rewiring, which is electrically connected to an internal electrode formed in the wiring layer; and a second rewiring, which is formed on the second main surface side of the semiconductor substrate.

[0220] In the solid-state imaging device according to the fifth embodiment of the present technology (Example 5 of the solid-state imaging device), the second rewiring may be provided below the first rewiring. In addition, in the solid-state imaging device according to the fifth embodiment of the present technology (Example 5 of the solid-state imaging device), the first rewiring may be formed by a plurality of first rewirings, the second rewiring may be formed by a plurality of second rewirings, and at least one of the plurality of first rewirings and at least one of the plurality of second rewirings may be connected.

[0221] In a solid-state imaging device according to the fifth embodiment of the present technology (Example 5 of the solid-state imaging device), the first rewiring can be formed by multiple first rewirings, the second rewiring can be formed by multiple second rewirings, the wiring layer can include multiple signal lines formed along a predetermined direction, and the multiple first rewirings and the multiple second rewirings can be arranged to generate multiple magnetic fields with different magnetic field directions in the area between two adjacent signal lines among the multiple signal lines.

[0222] Further, in a solid-state imaging device according to the fifth embodiment of the present technology (Example 5 of the solid-state imaging device), there can be at least one pair formed by a first rewiring line among the multiple first rewiring lines and a second rewiring line among the multiple second rewiring lines in the vertical direction, and the direction of the first current flowing in a first rewiring line and the direction of the second current flowing in a second rewiring line can be opposite to each other.

[0223] In addition, in a solid-state imaging device according to a fifth embodiment of the present technology (Example 5 of a solid-state imaging device), a first rewiring may be formed by a plurality of first rewirings, a second rewiring may be formed by a plurality of second rewirings, a wiring layer may include a plurality of signal lines formed along a predetermined direction, and when viewed from the side opposite to the light incident side, at least one of the plurality of first rewirings and / or at least one of the plurality of second rewirings may cover at least a portion of at least one of the plurality of signal lines.

[0224] Further, in a solid-state imaging device according to a fifth embodiment of the present technology (Example 5 of a solid-state imaging device), a first rewiring may be formed by a plurality of first rewirings, a groove portion may be formed on the second main surface side of the semiconductor substrate, and at least a portion of at least one of the plurality of first rewirings may be formed in the groove portion.

[0225] Furthermore, in the solid-state imaging device according to the fifth embodiment (Example 5 of the solid-state imaging device) of the present technology, preferably, the depth of the groove portion may be not less than the thickness of at least one of the plurality of first rewiring lines.

[0226] By a solid-state imaging device according to the fifth embodiment (Example 5 of the solid-state imaging device) of the present technology, the degree of freedom of rewiring layout can be increased or the imaging characteristics can be improved, and further, the increase in the degree of freedom of rewiring layout and the improvement in imaging characteristics can be achieved simultaneously. By a solid-state imaging device according to the fifth embodiment (Example 5 of the solid-state imaging device) of the present technology, the degree of freedom of rewiring design can be increased, and further, image noise can be reduced by rewiring layout in a stacked structure.

[0227] In addition to the above-described contents, the contents explained in the description of the solid-state imaging device according to the first to fourth embodiments of the present technology can be applied as is to the solid-state imaging device according to the fifth embodiment of the present technology unless there is some technical contradiction.

[0228] <7. Sixth Embodiment (Example of Electronic Equipment)>

[0229] An electronic device according to the sixth embodiment of the present technology is an electronic device installed with a solid-state imaging device according to the first aspect of the present technology, and the solid-state imaging device according to the first aspect of the present technology is a solid-state imaging device as follows, which includes: a semiconductor substrate having a first main surface on the light incident side and a second main surface on the side opposite to the first main surface, and light receiving elements are two-dimensionally arranged on the first main surface; a light-transmitting substrate, which is arranged above the light-receiving elements; a wiring layer, which is formed on the second main surface of the semiconductor substrate; a first rewiring, which is electrically connected to an internal electrode formed in the wiring layer; and a second rewiring, which is formed on the second main surface side of the semiconductor substrate.

[0230] Alternatively, an electronic device according to a sixth embodiment of the present technology is an electronic device equipped with a solid-state imaging device according to the second aspect of the present technology, and the solid-state imaging device according to the second aspect of the present technology is a solid-state imaging device comprising: a sensor substrate including a first semiconductor substrate having a first main surface on a light incident side and a second main surface on a side opposite to the first main surface (a light receiving element is formed and arranged two-dimensionally on the first main surface) and a first wiring layer formed on the second main surface of the first semiconductor substrate; a circuit substrate including a second semiconductor substrate having a third main surface on a light incident side and a fourth main surface on a side opposite to the third main surface and a second wiring layer formed on the third main surface of the second semiconductor substrate; a light-transmitting substrate disposed above the light-receiving element; a first rewiring electrically connected to an internal electrode formed in the second wiring layer; and a second rewiring formed on the fourth main surface side of the second semiconductor substrate. In the solid-state imaging device, the first wiring layer of the sensor substrate and the second wiring layer of the circuit substrate are bonded to form a stacked structure of the sensor substrate and the circuit substrate.

[0231] For example, an electronic device according to a sixth embodiment of the present technology is an electronic device on which a solid-state imaging device according to one of the solid-state imaging devices according to the first to fifth embodiments of the present technology is mounted.

[0232] <8. Example of use of solid-state imaging device to which the present technology is applied>

[0233] Fig. 27 It is a diagram showing a use example of the solid-state imaging device according to the first to fifth embodiments of the present technology as an image sensor.

[0234] For example, the solid-state imaging devices of the first to fifth embodiments described above can be used in various cases of sensing light such as visible light, infrared light, ultraviolet light, or X-rays as described below. Fig. 27 As shown in, for example, the solid-state imaging device of any one of the first to fifth embodiments can be used in devices for capturing images and using them for viewing activities, transportation, household appliances, medical care, security, beauty, sports, agriculture, etc. (for example, electronic devices such as the sixth embodiment described above, etc.).

[0235] Specifically, in the field of viewing activities, for example, the solid-state imaging device of any one of the first to fifth embodiments can be used in a device for capturing images used in viewing activities, such as a digital camera, a smartphone, or a portable phone with a camera function.

[0236] In the field of transportation, for example, the solid-state imaging device of any of the first to fifth embodiments can be used in devices for transportation purposes, such as vehicle-mounted sensors designed to capture images of the front, rear, surroundings, interior, etc. of a car to perform safe driving such as automatic stopping and identify the driver's condition, surveillance cameras for monitoring moving vehicles and roads, or ranging sensors for measuring the distance between vehicles, etc.

[0237] In the field of household appliances, for example, the solid-state imaging device of any of the first to fifth embodiments can be used in devices used as household appliances such as televisions, refrigerators, or air conditioners to capture images of user gestures and operate the device according to the gestures.

[0238] In the field of medical care, for example, the solid-state imaging device of any one of the first to fifth embodiments can be used in devices for medical or health care purposes, such as endoscopes or devices for receiving infrared light for angiography.

[0239] In the security field, for example, the solid-state imaging device of any one of the first to fifth embodiments can be used in a device for security purposes such as a surveillance camera for crime prevention or a camera for personal authentication.

[0240] In the beauty field, for example, the solid-state imaging device of any of the first to fifth embodiments can be used in devices for beauty purposes, such as a skin measurement device designed to capture images of the skin or a microscope for capturing images of the scalp.

[0241] In the field of sports, for example, the solid-state imaging device of any one of the first to fifth embodiments can be used in a device for sports purposes, such as an action camera or a wearable camera for sports.

[0242] In the agricultural field, for example, the solid-state imaging device of any one of the first to fifth embodiments can be used in a device for agricultural purposes, such as a camera for monitoring the conditions of fields and crops.

[0243] Next, use examples of the solid-state imaging device according to the first to fifth embodiments of the present technology are specifically described. For example, the solid-state imaging device of any of the first to fifth embodiments described above can be used as a solid-state imaging device 101 in any type of electronic device having an imaging function, such as a camera system like a digital still camera or a video camera, or a portable phone having an imaging function. Fig.28The schematic configuration of an electronic device 102 (camera) as an example is shown. For example, the electronic device 102 is a video camera capable of capturing still images or moving images, and includes a solid-state imaging device 101, an optical system (optical lens) 310, a shutter device 311, a drive unit 313 that drives the solid-state imaging device 101 and the shutter device 311, and a signal processing unit 312.

[0244] The optical system 310 guides the image light (incident light) from the subject to the pixel unit 101a of the solid-state imaging device 101. The optical system 310 can be formed by a plurality of optical lenses. The shutter device 311 controls the light irradiation period and the light shielding period of the solid-state imaging device 101. The driving unit 313 controls the transmission operation of the solid-state imaging device 101 and the shutter operation of the shutter device 311. The signal processing unit 312 performs various signal processing on the signal output from the solid-state imaging device 101. The video signal Dout after the signal processing is stored in a storage medium such as a memory, or is output to a display, etc.

[0245] <9. Application examples of endoscopic surgery systems>

[0246] The present technology can be applied to various products. For example, the technology according to the present disclosure (the present technology) can be applied to an endoscopic surgery system.

[0247] Fig.29 is a diagram schematically showing an example configuration of an endoscopic surgery system to which the technology according to the present disclosure (the present technology) can be applied.

[0248] Fig.29 The figure shows a state where an operator (doctor) 11131 is using an endoscopic surgery system 11000 to perform surgery on a patient 11132 on a bed 11133. As shown in the figure, the endoscopic surgery system 11000 includes an endoscope 11100, other surgical tools 11110 such as a pneumoperitoneum tube 11111 and an energy treatment tool 11112, a support arm device 11120 for supporting the endoscope 11100, and a cart 11200 on which various devices for endoscopic surgery are mounted.

[0249] The endoscope 11100 includes a lens barrel 11101, a region of a predetermined length from the top of the lens barrel is inserted into the body cavity of a patient 11132, and a camera head 11102, which is connected to the base end of the lens barrel 11101. In the example shown in the figure, the endoscope 11100 is designed as a so-called rigid scope having a rigid lens barrel 11101. However, the endoscope 11100 may also be designed as a flexible scope having a flexible lens barrel.

[0250] An opening into which an objective lens is inserted is provided at the top of the lens barrel 11101. The light source device 11203 is connected to the endoscope 11100, and the light generated by the light source device 11203 is guided to the top of the lens barrel 11101 through a light guide extending into the interior of the lens barrel 11101, and is irradiated through the objective lens onto a current observation target in the body cavity of the patient 11132. It should be noted that the endoscope 11100 may be a forward-looking endoscope, an oblique-looking endoscope, or a side-looking endoscope.

[0251] The optical system and the imaging element are arranged inside the camera head 11102, and the reflected light (observation light) from the current observation target is gathered on the imaging element through the optical system. The observation light is photoelectrically converted by the imaging element, and an electrical signal corresponding to the observation light, or an image signal corresponding to the observation image is generated. The image signal is transmitted to the camera control unit (CCU) 11201 as raw (RAW) data.

[0252] The CCU 11201 is formed of a central processing unit (CPU), a graphics processing unit (GPU), etc., and generally controls the operations of the endoscope 11100 and the display device 11202. Further, for example, the CCU 11201 receives an image signal from the camera head 11102, and performs various image processing such as development processing (demosaic processing) on ​​the image signal to display an image based on the image signal.

[0253] The display device 11202 displays an image based on an image signal that has been image-processed by the CCU 11201 under the control of the CCU 11201 .

[0254] For example, the light source device 11203 is formed of a light source such as a light emitting diode (LED), and provides irradiation light for imaging a surgical site, etc. to the endoscope 11100.

[0255] The input device 11204 is an input interface of the endoscopic surgery system 11000. The user can input various information or instructions to the endoscopic surgery system 11000 through the input device 11204. For example, the user may input instructions to change the imaging conditions (type of irradiation light, magnification, focal length, etc.) of the endoscope 11100.

[0256] The treatment tool control device 11205 controls the driving of the energy treatment tool 11112 to perform tissue cauterization, incision, blood vessel sealing, etc. The pneumoperitoneum device 11206 supplies gas into the body cavity of the patient 11132 through the pneumoperitoneum tube 11111 to expand the body cavity in order to ensure the field of view of the endoscope 11100 and to ensure the working space of the operator. The recorder 11207 is a device capable of recording various information related to the operation. The printer 11208 is a device capable of printing various information related to the operation in various forms such as text, images, or graphics.

[0257] It should be noted that, for example, the light source device 11203 that provides irradiation light for imaging the surgical site to the endoscope 11100 can be composed of an LED, a laser light source, or a white light source that is a combination of an LED and a laser light source. In the case where the white light source is composed of a combination of RGB laser light sources, the output intensity and output timing of each color (each wavelength) can be controlled with high precision. Therefore, the white balance of the image captured by the light source device 11203 can be adjusted. Alternatively, in this case, the lasers from the respective RGB laser light sources can be irradiated on the current observation target in a time-division manner, and the driving of the imaging element of the camera head 11102 can be controlled in synchronization with the light irradiation timing. Therefore, images corresponding to R, G, and B colors, respectively, can be captured in a time-division manner. According to this method, a color image can be obtained even if no color filter is set in the imaging element.

[0258] Furthermore, the drive of the light source device 11203 can also be controlled so as to change the intensity of the light to be output at a predetermined time interval. The drive of the imaging element of the camera head 11102 is controlled synchronously with the timing of the change in light intensity, and images are acquired and synthesized in a time-division manner. Therefore, an image with a high dynamic range can be generated without black parts and white spots.

[0259] Further, the light source device 11203 can also be designed to provide light of a predetermined wavelength band compatible with special light observation. For example, in special light observation, by utilizing the wavelength dependence of light absorption of body tissue, a narrower band of light than the irradiation light (i.e., white light) during ordinary observation is irradiated. Therefore, narrow-band observation (narrow-band imaging) is performed on predetermined tissues such as blood vessels on the surface of the mucosa with high contrast. Alternatively, in special light observation, fluorescence observation for obtaining an image from fluorescence generated by irradiating excitation light can be performed. In fluorescence observation, excitation light is irradiated on body tissue, so that fluorescence from body tissue can be observed (autofluorescence observation). Alternatively, for example, reagents such as indocyanine green (ICG) are locally injected into body tissue and excitation light corresponding to the fluorescence wavelength of the reagent is irradiated on the body tissue, so that a fluorescent image can be obtained. The light source device 11203 can be designed to provide narrow-band light and / or excitation light compatible with such special light observation.

[0260] Fig.30 It shows Fig.29 A block diagram of an example of the functional configuration of the camera head 11102 and the CCU 11201 shown in FIG.

[0261] The camera head 11102 includes a lens unit 11401, an imaging unit 11402, a driving unit 11403, a communication unit 11404, and a camera head control unit 11405. The CCU 11201 includes a communication unit 11411, an image processing unit 11412, and a control unit 11413. The camera head 11102 and the CCU 11201 are connected to each other for communication via a transmission cable 11400.

[0262] The lens unit 11401 is an optical system provided at a connection portion with the lens barrel 11101. Observation light captured from the top end of the lens barrel 11101 is guided to the camera head 11102 and enters the lens unit 11401. The lens unit 11401 is composed of a combination of a plurality of lenses including a zoom lens and a focus lens.

[0263] The imaging unit 11402 is formed by an imaging element. The imaging unit 11402 may be formed by one imaging element (so-called single-board type), or may be formed by a plurality of imaging elements (so-called multi-board type). For example, in the case where the imaging unit 11402 is a multi-board type, image signals corresponding to the respective R, G, and B colors may be generated by respective imaging elements, and the image signals may be synthesized to obtain a color image. Alternatively, the imaging unit 11402 may be designed to include a pair of imaging elements for acquiring a right-eye image signal and a left-eye image signal compatible with a three-dimensional (3D) display. When performing a 3D display, the operator 11131 may more accurately grasp the depth of the living tissue of the surgical site. It should be noted that in the case where the imaging unit 11402 is a multi-board type, a plurality of lens units 11401 are provided for each imaging element.

[0264] Further, the imaging unit 11402 may not necessarily be disposed in the camera head 11102. For example, the imaging unit 11402 may be disposed just behind the objective lens inside the lens barrel 11101.

[0265] The driving unit 11403 is composed of an actuator, and moves the zoom lens and the focus lens of the lens unit 11401 by a predetermined distance along the optical axis under the control of the camera head control unit 11405. With this configuration, the magnification and focus of the image captured by the imaging unit 11402 can be appropriately adjusted.

[0266] The communication unit 11404 is constituted by a communication device for sending and receiving various information to and from the CCU 11201. The communication unit 11404 transmits the image signal acquired from the imaging unit 11402 to the CCU 11201 through the transmission cable 11400 as RAW data.

[0267] In addition, the communication unit 11404 also receives a control signal for controlling the driving of the camera head 11102 from the CCU 11201, and provides the control signal to the camera head control unit 11405. For example, the control signal includes information related to imaging conditions, such as information specifying a frame rate of a captured image, information specifying an exposure value at the time of imaging, and / or information specifying a magnification and a focus of a captured image.

[0268] It should be noted that the above imaging conditions such as frame rate, exposure value, magnification or focus can be appropriately specified by the user or can be automatically set based on the acquired image signal by the control unit 11413 of the CCU 11201. In the latter case, the endoscope 11100 has a so-called automatic exposure (AE) function, an automatic focus (AF) function, and an automatic white balance (AWB) function.

[0269] The camera head control unit 11405 controls the driving of the camera head 11102 based on a control signal received from the CCU 11201 through the communication unit 11404 .

[0270] The communication unit 11411 is constituted by a communication device for transmitting and receiving various information to and from the camera head 11102. The communication unit 11411 receives an image signal transmitted from the camera head 11102 through the transmission cable 11400.

[0271] Further, the communication unit 11411 also transmits a control signal for controlling the driving of the camera head 11102 to the camera head 11102. The image signal and the control signal may be transmitted through electrical communication, optical communication, or the like.

[0272] The image processing unit 11412 performs various image processing on the image signal transmitted from the camera head 11102 as RAW data.

[0273] The control unit 11413 performs various controls related to the display of images of the surgical site, etc. captured by the endoscope 11100 and the captured images obtained by imaging the surgical site, etc. For example, the control unit 11413 generates a control signal for controlling the driving of the camera head 11102 .

[0274] Further, the control unit 11413 also causes the display device 11202 to display a captured image showing the surgical site, etc., based on the image signal that has been image-processed by the image processing unit 11412. At this time, the control unit 11413 can use various image recognition technologies to recognize various objects in the captured image. For example, the control unit 11413 can detect the shape, color, etc. of the edge of the object shown in the captured image to recognize surgical tools such as surgical forceps, specific living parts, bleeding, fog when using the energy treatment tool 11112, etc. When the control unit 11413 causes the display device 11202 to display the captured image, it can use the recognition result to cause the display device 11202 to superimpose various surgical auxiliary information on the displayed image of the surgical site. When the surgical auxiliary information is superimposed and displayed and presented to the operator 11131, the burden of the operator 11131 can be reduced and the operator 11131 can reliably perform the operation.

[0275] The transmission cable 11400 connecting the camera head 11102 and the CCU 11201 is an electric signal cable compatible with electric signal communication, an optical fiber compatible with optical communication, or a composite cable thereof.

[0276] Here, in the example shown in the figure, communication is performed in a wired manner using a transmission cable 11400. However, communication between the camera head 11102 and the CCU 11201 may be performed in a wireless manner.

[0277] An example of an endoscopic surgical system to which the technology according to the present disclosure can be applied has been described above. For example, the technology according to the present disclosure can be applied to the endoscope 11100, the imaging unit 11402 of the camera head 11102, etc. in the configuration described above. Specifically, the solid-state imaging device 1 of the present disclosure can be applied to the imaging unit 10402. As the technology according to the present disclosure is applied to the endoscope 11100, the camera head 11102 (the imaging unit 11402), etc., the performance, quality, etc. of the endoscope 11100, the camera head 11102 (the imaging unit 11402), etc. can be improved.

[0278] Although an endoscopic surgery system has been described here as an example, for example, the technology according to the present disclosure can also be applied to a microsurgery system or the like.

[0279] <10. Application examples of mobile objects>

[0280] The technology according to the present disclosure (the present technology) can be applied to various products. For example, the technology according to the present disclosure can be implemented as a device installed on any type of mobile body, such as: an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, a personal mobility device, an airplane, a drone, a ship, or a robot.

[0281] Fig.31 is a block diagram schematically showing an exemplary configuration of a vehicle control system as an example of a moving body control system to which the technology according to the present disclosure can be applied.

[0282] The vehicle control system 12000 includes a plurality of electronic control units connected via a communication network 12001. Fig.31 In the example shown, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an external information detection unit 12030, an internal information detection unit 12040, and an integrated control unit 12050. In addition, as functional components of the integrated control unit 12050, a microcomputer 12051, a sound / image output unit 12052, and an in-vehicle network interface (I / F) 12053 are shown.

[0283] The drive system control unit 12010 controls the operation of devices related to the drive system of the vehicle according to various programs. For example, the drive system control unit 12010 functions as a control device for a drive force generating device such as an internal combustion engine or a drive motor for generating a drive force of the vehicle; a drive force transmitting mechanism for transmitting the drive force to the wheels; a steering mechanism for adjusting the steering angle of the vehicle; a braking device for generating a braking force of the vehicle, and the like.

[0284] The body system control unit 12020 controls the operation of various devices installed on the vehicle body according to various programs. For example, the body system control unit 12020 acts as a control device for a keyless entry system, a smart key system, a power window device, or various lights such as headlights, rear lights, brake lights, turn signal lights, and fog lights. In this case, the body system control unit 12020 can receive radio waves sent from a portable device that replaces the key or signals from various switches. The body system control unit 12020 receives input of these radio waves or signals and controls the door lock device, power window device, lights, etc. of the vehicle.

[0285] The vehicle exterior information detection unit 12030 detects information of the exterior of the vehicle in which the vehicle control system 12000 is installed. For example, the imaging unit 12031 is connected to the vehicle exterior information detection unit 12030. The vehicle exterior information detection unit 12030 enables the imaging unit 12031 to capture an image of the exterior of the vehicle and receive the captured image. The vehicle exterior information detection unit 12030 may perform object detection processing for detecting a person, a vehicle, an obstacle, a sign, or characters on a road surface, etc., or perform distance detection processing based on the received image.

[0286] The imaging unit 12031 is an optical sensor that receives light and outputs an electrical signal corresponding to the amount of light received. The imaging unit 12031 can output the electrical signal as an image, and can output the electrical signal as distance measurement information. In addition, the light received by the imaging unit 12031 may be visible light or may be invisible light such as infrared light.

[0287] The in-vehicle information detection unit 12040 detects information about the interior of the vehicle. For example, a driver state detector 12041 that detects the state of the driver is connected to the in-vehicle information detection unit 12040. For example, the driver state detector 12041 includes a camera that captures an image of the driver, and the in-vehicle information detection unit 12040 can calculate the driver's fatigue level or concentration level based on the detection information input from the driver state detector 12041, or can determine whether the driver is dozing off.

[0288] The microcomputer 12051 calculates the control target value of the driving force generating device, the steering mechanism or the braking device based on the information outside / inside the vehicle obtained by the vehicle outside information detection unit 12030 or the vehicle inside information detection unit 12040, and can output a control instruction to the drive system control unit 12010. For example, the microcomputer 12051 can perform cooperative control to realize the functions of the advanced driver assistance system (ADAS), which includes collision avoidance or collision mitigation of the vehicle, following driving based on the vehicle-to-vehicle distance, speed maintenance driving, collision warning of the vehicle, and lane departure warning of the vehicle.

[0289] In addition, the microcomputer 12051 controls the driving force generating device, steering mechanism or braking device, etc. based on the information about the vehicle's surroundings obtained by the external information detection unit 12030 or the internal information detection unit 12040 to perform collaborative control such as automatic driving of automatic driving that does not rely on the driver's operation.

[0290] In addition, the microcomputer 12051 can output a control instruction to the body system control unit 12020 based on the information outside the vehicle obtained by the vehicle exterior information detection unit 12030. For example, the microcomputer 12051 controls the headlights according to the position of the front vehicle or the oncoming vehicle detected by the vehicle exterior information detection unit 12030 and performs cooperative control to achieve a glare-free effect by switching the high beam to the low beam, etc.

[0291] The sound / image output unit 12052 transmits an audio output signal and / or an image output signal to an output device that can visually or auditorily notify information to a passenger of the vehicle or the outside of the vehicle. Fig.31 In the example of , as output devices, an audio speaker 12061, a display unit 12062, and an instrument panel 12063 are exemplarily shown. For example, the display unit 12062 may include an in-vehicle display and / or a head-up display.

[0292] Fig.32 12031 is a diagram showing an example of the installation position of the imaging unit 12031.

[0293] exist Fig.32 In the figure, vehicle 12100 includes imaging units 12101, 12102, 12103, 12104 and 12105 as imaging unit 12031.

[0294] For example, the imaging units 12101, 12102, 12103, 12104, and 12105 are arranged at the following positions: the front edge of the vehicle 12100, the side mirrors, the rear bumper, the rear door, and the upper part of the front windshield in the vehicle. The imaging unit 12101 arranged on the front edge and the imaging unit 12105 arranged on the upper part of the front windshield in the vehicle mainly acquire images in front of the vehicle 12100. The imaging units 12102 and 12103 arranged on the side mirrors mainly acquire images of the sides of the vehicle 12100. The imaging unit 12104 arranged on the rear bumper or the rear door mainly acquires images of the rear of the vehicle 12100. The front images acquired by the imaging units 12101 and 12105 are mainly used to detect vehicles, pedestrians, obstacles, traffic lights, traffic signs, lanes, etc. traveling in front of the vehicle 12100.

[0295] It should be noted that Fig.32 An example of the imaging ranges of the imaging units 12101 to 12104 is shown. The imaging range 12111 indicates the imaging range of the imaging unit 12101 provided on the front edge, the imaging ranges 12112 and 12113 indicate the imaging ranges of the imaging units 12102 and 12103 provided on the respective side mirrors, and the imaging range 12114 indicates the imaging range of the imaging unit 12104 provided on the rear bumper or the rear door. For example, the image data captured by the imaging units 12101 to 12104 are superimposed to obtain a bird's-eye view image of the vehicle 12100 observed from above.

[0296] At least one of the imaging units 12101 to 12104 may have a function of obtaining distance information. For example, at least one of the imaging units 12101 to 12104 may be a stereo camera including a plurality of imaging elements, or may be an imaging element having pixels for phase difference detection.

[0297] For example, the microcomputer 12051 calculates the distance to each three-dimensional object within the imaging range 12111 to 12114 and the time change of the distance (relative to the speed of the vehicle 12100) based on the distance information obtained from the imaging units 12101 to 12104. In this way, a three-dimensional object that is the closest three-dimensional object on the driving path of the vehicle 12100 and travels in the same direction as the vehicle 12100 at a predetermined speed (for example, 0 km / h or more) can be extracted as a vehicle traveling in front of the vehicle 12100. In addition, the microcomputer 12051 can pre-set the vehicle distance to be ensured in front of the vehicle traveling in front of the vehicle 12100, and perform automatic braking control (including follow-up stop control) and automatic acceleration control (including follow-up start control) and the like. In this way, cooperative control such as automatic driving that realizes automatic driving that does not rely on the operation of the driver can be performed.

[0298] For example, the microcomputer 12051 can extract three-dimensional object data about three-dimensional objects based on the distance information obtained from the imaging units 12101 to 12104, which are classified into two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, and utility poles, etc., and the three-dimensional object data can be used to automatically avoid obstacles. For example, the microcomputer 12051 distinguishes obstacles near the vehicle 12100 into obstacles that can be recognized by the driver of the vehicle 12100 and obstacles that cannot be recognized. Then, the microcomputer 12051 determines the collision risk representing the risk of collision with each obstacle. If the collision risk is equal to or higher than the set value and there is a possibility of collision, the microcomputer 12051 can output a warning to the driver via the audio speaker 12061 and the display unit 12062 and can perform driving support for collision avoidance by performing forced deceleration or evasive steering by the drive system control unit 12010.

[0299] At least one of the imaging units 12101 to 12104 may be an infrared camera that detects infrared light. For example, the microcomputer 12051 may identify a pedestrian by determining whether there is a pedestrian in the image captured by the imaging units 12101 to 12104. For example, such identification of pedestrians is performed by a process of extracting feature points from the image captured by the imaging units 12101 to 12104 as infrared cameras and a process of pattern matching a series of feature points representing the outline of the object and determining whether there is a pedestrian. For example, if the microcomputer 12051 determines that there is a pedestrian in the image captured by the imaging units 12101 to 12104 and identifies the pedestrian, the sound / image output unit 12052 controls the display unit 12062 to display a rectangular contour line for emphasizing the identified pedestrian in a superimposed manner. In addition, the sound / image output unit 12052 may also control the display unit 12062 to display an icon representing a pedestrian, etc., at a desired position.

[0300] An example of a vehicle control system to which the technology according to the present disclosure (the present technology) can be applied has been described above. For example, the technology according to the present disclosure can be applied to the imaging unit 12031 and the like among the components described above. Specifically, the solid-state imaging device 1 of the present disclosure can be applied to the imaging unit 12031. As the technology according to the present disclosure is applied to the imaging unit 12031, the performance, quality, etc. of the imaging unit 12031 can be improved.

[0301] It should be noted that the present technology is not limited to the embodiments and application examples described above, and various modifications may be made to them without departing from the scope of the present technology.

[0302] Further, the advantageous effects described in this specification are merely examples, and the advantageous effects of the present technology are not limited to these and may include other effects.

[0303] The present technology may also have the following configurations.

[0304] [1] A solid-state imaging device comprising:

[0305] a semiconductor substrate having a first main surface on a light incident side and a second main surface on a side opposite to the first main surface, light receiving elements being two-dimensionally arranged on the first main surface;

[0306] a light-transmitting substrate disposed above the light-receiving element;

[0307] a wiring layer formed on the second main surface of the semiconductor substrate;

[0308] a first rewiring line electrically connected to an internal electrode formed in the wiring layer; and

[0309] A second rewiring is formed on the second main surface side of the semiconductor substrate.

[0310] [2] The solid-state imaging device according to [1], wherein the second rewiring is provided below the first rewiring.

[0311] [3] The solid-state imaging device according to [1] or [2], wherein

[0312] The first rewiring is formed by a plurality of first rewirings,

[0313] The second rewiring is formed of a plurality of second rewirings, and

[0314] At least one first rewiring line among the plurality of first rewiring lines is connected to at least one second rewiring line among the plurality of second rewiring lines.

[0315] [4] The solid-state imaging device according to any one of [1] to [3], wherein

[0316] The first rewiring is formed by a plurality of first rewirings,

[0317] The second rewiring is formed by a plurality of second rewirings,

[0318] The wiring layer includes a plurality of signal lines formed along a predetermined direction, and

[0319] The plurality of first rewiring lines and the plurality of second rewiring lines are arranged to generate a plurality of magnetic fields whose directions are different from each other in a region between two adjacent signal lines among the plurality of signal lines.

[0320] [5] The solid-state imaging device according to [4], wherein

[0321] There is at least one pair formed by one first rewiring line among the plurality of first rewiring lines and one second rewiring line among the plurality of second rewiring lines in the vertical direction, and,

[0322] In the pair, a direction of a first current flowing in the one first rewiring and a direction of a second current flowing in the one second rewiring are opposite to each other.

[0323] [6] The solid-state imaging device according to any one of [1] to [5], wherein

[0324] The first rewiring is formed by a plurality of first rewirings,

[0325] The second rewiring is formed by a plurality of second rewirings,

[0326] The wiring layer includes a plurality of signal lines formed along a predetermined direction, and

[0327] When viewed from the side opposite to the light incident side, at least one first rewiring line of the plurality of first rewiring lines and / or at least one second rewiring line of the plurality of second rewiring lines covers at least a portion of at least one signal line of the plurality of signal lines.

[0328] [7] The solid-state imaging device according to any one of [1] to [6], wherein

[0329] The first rewiring is formed by a plurality of first rewirings,

[0330] A groove portion is formed on the second main surface side of the semiconductor substrate, and

[0331] At least a portion of at least one first rewiring line of the plurality of first rewiring lines is formed in the groove portion.

[0332] [8] The solid-state imaging device according to [7], wherein a depth of the groove portion is not less than a thickness of at least one first rewiring line among the plurality of first rewiring lines.

[0333] [9] A solid-state imaging device comprising:

[0334] A sensor substrate comprising:

[0335] a first semiconductor substrate having a first main surface on a light incident side and a second main surface on a side opposite to the first main surface, on which light receiving elements are two-dimensionally arranged; and

[0336] a first wiring layer formed on the second main surface of the first semiconductor substrate;

[0337] A circuit substrate, comprising:

[0338] a second semiconductor substrate having a third main surface on the light incident side and a fourth main surface on the side opposite to the third main surface; and

[0339] a second wiring layer formed on the third main surface of the second semiconductor substrate;

[0340] a light-transmitting substrate disposed above the light-receiving element;

[0341] a first rewiring line electrically connected to an internal electrode formed in the second wiring layer; and

[0342] a second rewiring formed on the fourth main surface side of the second semiconductor substrate,

[0343] The first wiring layer of the sensor substrate and the second wiring layer of the circuit substrate are bonded to form a stacked structure of the sensor substrate and the circuit substrate.

[0344]

[10] The solid-state imaging device according to [9], wherein the second rewiring is provided below the first rewiring.

[0345]

[11] The solid-state imaging device according to [9] or

[10] , wherein

[0346] The first rewiring is formed by a plurality of first rewirings,

[0347] The second rewiring is formed of a plurality of second rewirings, and

[0348] At least one first rewiring line among the plurality of first rewiring lines is connected to at least one second rewiring line among the plurality of second rewiring lines.

[0349]

[12] The solid-state imaging device according to any one of [9] to

[11] , wherein

[0350] The first rewiring is formed by a plurality of first rewirings,

[0351] The second rewiring is formed by a plurality of second rewirings,

[0352] The second wiring layer includes a plurality of signal lines formed along a predetermined direction, and

[0353] The plurality of first rewiring lines and the plurality of second rewiring lines are arranged to generate a plurality of magnetic fields whose directions are different from each other in a region between two adjacent signal lines among the plurality of signal lines.

[0354]

[13] The solid-state imaging device according to

[12] , wherein:

[0355] There is at least one pair formed by one first rewiring line among the plurality of first rewiring lines and one second rewiring line among the plurality of second rewiring lines in the vertical direction, and,

[0356] In the pair, a direction of a first current flowing in the one first rewiring and a direction of a second current flowing in the one second rewiring are opposite to each other.

[0357]

[14] The solid-state imaging device according to any one of [9] to

[13] , wherein

[0358] The first rewiring is composed of a plurality of first rewirings,

[0359] The second rewiring is composed of a plurality of second rewirings,

[0360] The second wiring layer includes a plurality of signal lines formed along a predetermined direction, and

[0361] When viewed from the side opposite to the light incident side, at least one first rewiring line of the plurality of first rewiring lines and / or at least one second rewiring line of the plurality of second rewiring lines covers at least a portion of at least one signal line of the plurality of signal lines.

[0362]

[15] The solid-state imaging device according to any one of [9] to

[14] , wherein

[0363] The first rewiring is formed by a plurality of first rewirings,

[0364] A groove portion is formed on the fourth main surface side of the second semiconductor substrate, and

[0365] At least a portion of at least one first rewiring line of the plurality of first rewiring lines is formed in the groove portion.

[0366]

[16] The solid-state imaging device according to

[15] , wherein a depth of the groove portion is not less than a thickness of at least one first rewiring line among the plurality of first rewiring lines.

[0367]

[17] An electronic device comprising the solid-state imaging device according to any one of [1] to

[16] .

[0368] Reference numerals list

[0369] 1, 3, 4 Solid-state imaging device

[0370] 108, 208, 408, 508, 608 Internal electrodes

[0371] 110, 210, 310a, 310b, 410a, 410b, 410c, 510, 610 First rewiring

[0372] 112, 212, 312a, 312b, 412a, 412b, 412c, 512, 612 Second rewiring

Claims

1. A solid-state imaging device, include: a semiconductor substrate having a first main surface on a light incident side and a second main surface on a side opposite to the first main surface, light receiving elements being two-dimensionally arranged on the first main surface; a light-transmitting substrate disposed above the light-receiving element; a wiring layer formed on the second main surface of the semiconductor substrate; a first rewiring electrically connected to an internal electrode formed in the wiring layer; and a second rewiring formed on the second main surface side of the semiconductor substrate, wherein The first rewiring is formed by a plurality of first rewirings, The second rewiring is formed by a plurality of second rewirings, There is at least one pair formed by one first rewiring line among the plurality of first rewiring lines and one second rewiring line among the plurality of second rewiring lines in the vertical direction, In the pair, a direction of a first current flowing in the one first rewiring and a direction of a second current flowing in the one second rewiring are opposite to each other, The directions of the first currents flowing in the first rewiring lines adjacent to each other in the horizontal direction are opposite to each other, and Directions of the second currents flowing in the second rewiring lines adjacent to each other in the horizontal direction are opposite to each other. 2 . The solid-state imaging device according to claim 1 , wherein the second rewiring is provided below the first rewiring.

3. The solid-state imaging device according to claim 1 or 2, wherein At least one first rewiring line among the plurality of first rewiring lines is connected to at least one second rewiring line among the plurality of second rewiring lines.

4. The solid-state imaging device according to claim 1 or 2, wherein The wiring layer includes a plurality of signal lines formed along a predetermined direction, and The plurality of first rewiring lines and the plurality of second rewiring lines are arranged to generate a plurality of magnetic fields whose directions are different from each other in a region between two adjacent signal lines among the plurality of signal lines.

5. The solid-state imaging device according to claim 1 or 2, wherein The wiring layer includes a plurality of signal lines formed along a predetermined direction, and When viewed from the side opposite to the light incident side, at least one first rewiring line of the plurality of first rewiring lines and / or at least one second rewiring line of the plurality of second rewiring lines covers at least a portion of at least one signal line of the plurality of signal lines.

6. The solid-state imaging device according to claim 1 or 2, wherein A groove portion is formed on the second main surface side of the semiconductor substrate, and At least a portion of at least one first rewiring line of the plurality of first rewiring lines is formed in the groove portion. 7 . The solid-state imaging device according to claim 6 , wherein a depth of the groove portion is not less than a thickness of at least one first rewiring line among the plurality of first rewiring lines.

8. A solid-state imaging device, include: A sensor substrate comprising: a first semiconductor substrate having a first main surface on a light incident side and a second main surface on a side opposite to the first main surface, on which light receiving elements are two-dimensionally arranged; and a first wiring layer formed on the second main surface of the first semiconductor substrate; A circuit substrate, comprising: a second semiconductor substrate having a third main surface on the light incident side and a fourth main surface on the side opposite to the third main surface; and a second wiring layer formed on the third main surface of the second semiconductor substrate; a light-transmitting substrate disposed above the light-receiving element; a first rewiring line electrically connected to an internal electrode formed in the second wiring layer; and a second rewiring layer formed on the fourth main surface side of the second semiconductor substrate, wherein the first wiring layer of the sensor substrate and the second wiring layer of the circuit substrate are bonded to form a stacked structure of the sensor substrate and the circuit substrate, The first rewiring is formed by a plurality of first rewirings, The second rewiring is formed by a plurality of second rewirings, There is at least one pair formed by one first rewiring line among the plurality of first rewiring lines and one second rewiring line among the plurality of second rewiring lines in the vertical direction, In the pair, a direction of a first current flowing in the one first rewiring and a direction of a second current flowing in the one second rewiring are opposite to each other, The directions of the first currents flowing in the first rewiring lines adjacent to each other in the horizontal direction are opposite to each other, and Directions of the second currents flowing in the second rewiring lines adjacent to each other in the horizontal direction are opposite to each other. 9 . The solid-state imaging device according to claim 8 , wherein the second rewiring is provided below the first rewiring.

10. The solid-state imaging device according to claim 8 or 9, wherein At least one first rewiring line among the plurality of first rewiring lines is connected to at least one second rewiring line among the plurality of second rewiring lines.

11. The solid-state imaging device according to claim 8 or 9, wherein The second wiring layer includes a plurality of signal lines formed along a predetermined direction, and The plurality of first rewiring lines and the plurality of second rewiring lines are arranged to generate a plurality of magnetic fields whose directions are different from each other in a region between two adjacent signal lines among the plurality of signal lines.

12. The solid-state imaging device according to claim 8 or 9, wherein The second wiring layer includes a plurality of signal lines formed along a predetermined direction, and When viewed from the side opposite to the light incident side, at least one first rewiring line of the plurality of first rewiring lines and / or at least one second rewiring line of the plurality of second rewiring lines covers at least a portion of at least one signal line of the plurality of signal lines.

13. The solid-state imaging device according to claim 8 or 9, wherein A groove portion is formed on the fourth main surface side of the second semiconductor substrate, and At least a portion of at least one first rewiring line of the plurality of first rewiring lines is formed in the groove portion. 14 . The solid-state imaging device according to claim 13 , wherein a depth of the groove portion is not less than a thickness of at least one first rewiring line among the plurality of first rewiring lines.

15. An electronic device comprising the solid-state imaging device according to any one of claims 1 to 14.

Images