Substrate processing equipment

Abstract

The present invention provides a technology that can effectively prevent contamination of a substrate by impurities and perform good processing in a substrate processing device that processes a substrate in a chamber using a processing fluid. An inlet flow path (17) is provided in the chamber (100) for receiving the processing fluid from outside the chamber and introducing it into the processing space. The inlet flow path supplies the processing fluid via flow paths (173) and (177) whose cross-sectional shapes are roughly consistent with the cross-sectional shapes of the spacing space formed by the gap between the wall surface of the processing space (SP) and the support tray (15). The processing fluid that has passed through the processing space is discharged to a buffer space (182) and (186) whose width is greater than or equal to the processing space, and is further discharged to the outside of the chamber via exhaust flow paths (183) and (187) connected to the two ends of the buffer space in the width direction.

Description

Technical Field

[0001] The invention relates to a substrate processing device which processes a substrate in a chamber by using a processing fluid. Background Art

[0002] The processing steps of various substrates such as semiconductor substrates and glass substrates for display devices include the steps of treating the substrate surface with various processing fluids. In the past, the processing using liquids such as chemical solutions or rinse solutions as processing fluids was widely used, but in recent years, the processing using supercritical fluids has also been used. In particular, in the processing of substrates with fine patterns formed on the surface, supercritical fluids with lower surface tension than liquids can penetrate deep into the gaps of the pattern, so they can be processed efficiently. In addition, the risk of pattern collapse caused by surface tension during drying can be reduced.

[0003] For example, Japanese Patent Publication No. 2018-082043 describes a substrate processing device that uses a supercritical fluid to perform substrate drying. In this device, a processing container is configured in which two plate-like members are arranged opposite to each other and the gap between the two serves as a processing space. A wafer (substrate) mounted on a thin plate-like holding plate is moved in from one end of the processing space, and supercritical carbon dioxide is introduced from the other end.

[0004] The processing container used for such processing is a high-pressure chamber. An opening for carrying in and out the substrate is provided in the chamber, and the opening is closed by a cover to form a processing space. An elastic sealing member such as a rubber sealing member is provided between the chamber and the cover to maintain the airtightness of the processing space.

[0005] In the above-mentioned prior art, there is no detailed description of how the processing fluid in the chamber flows. However, according to the opinions of the inventors of the present application, the flow mode of the processing fluid in the chamber will affect the quality of the processing results, that is, it will affect the cleanliness of the substrate after processing. That is, if the flow of the processing fluid in the chamber is turbulent, impurities generated by the sealing member, etc. may adhere to the substrate and contaminate the substrate. Summary of the invention

[0006] The present invention has been made in view of the above problems, and an object of the present invention is to provide a technology capable of effectively preventing contamination of a substrate by impurities and performing good processing in a substrate processing apparatus that processes the substrate in a chamber using a processing fluid.

[0007] One embodiment of the present invention is a substrate processing device for processing the surface of a substrate using a processing fluid. To achieve the above purpose, the device comprises: a flat substrate holding portion capable of placing the substrate on an upper surface in a horizontal position; a chamber having a processing space inside and an opening on a side, wherein the processing space can accommodate the substrate holding portion on which the substrate is placed, and the opening is connected to the processing space and allows the substrate holding portion to pass through. The chamber is provided with an inlet flow path connected to the processing space and receiving the processing fluid supplied from outside the chamber, a buffer space connected to the processing space, and a discharge flow path for discharging the processing fluid from the buffer space to outside the chamber.

[0008] Wherein, the inlet flow path is connected to a nozzle opening facing the partition space at one end of the processing space in a plan view, and the partition space is formed by a gap between the wall of the processing space and the substrate holding portion, and the shape of the nozzle and the cross-sectional shape of the flow path leading to the nozzle are substantially the same as the cross-sectional shape of the partition space; the buffer space is connected to the processing space at the other end opposite to the one end across the substrate in a plan view, and has a width substantially the same as that of the partition space in a width direction perpendicular to the flow direction of the processing fluid from the one end toward the other end; a pair of openings arranged at both ends of the buffer space in the width direction are respectively connected to the exhaust flow path.

[0009] In the invention thus constituted, the space in the processing space other than the space occupied by the substrate and the substrate holding part, that is, the space formed by the gap between the wall surface of the processing space and the substrate holding part, functions as a flow path for the processing fluid to flow. In the introduction path for introducing the processing fluid into the processing space, the processing fluid flows into the processing space via the flow path and the ejection port, and the flow path and the ejection port have a cross-sectional shape that is substantially the same as the cross-sectional shape of the space. Therefore, the laminar flow formed on the flow path closer to the upstream side than the ejection port maintains this state and flows into the processing space.

[0010] On the other hand, after the treatment fluid passes through the treatment space, it flows into the buffer space having a width substantially the same as that of the interval space, and is then discharged to the outside through the discharge flow path. The details will be described later. By setting the position of the discharge flow path connected to the buffer space to the two ends of the buffer space in the width direction, the retention of the treatment fluid in the buffer space can be prevented. In addition, it has the effect of suppressing the generation of components toward the central side in the width direction in the flow of the treatment fluid in the interval space. Thus, in the interval space, the treatment fluid can flow into the buffer space in a laminar state.

[0011] In this way, in the flow of the processing fluid from the introduction flow path through the processing space to the buffer space, the flow path is formed in a way to maintain a laminar flow in one direction, thereby suppressing the occurrence of turbulence in the processing space. The turbulence in the processing space causes the liquid components or other impurities released from the substrate to adhere to the substrate and contaminate the substrate. By suppressing the occurrence of turbulence, the substrate can be prevented from being contaminated.

[0012] As described above, in the present invention, in the flow direction of the processing fluid, between the inlet flow path closer to the upstream side than the processing space and the buffer space on the downstream side, the processing fluid can be made to flow as a laminar flow with a substantially constant cross-sectional shape. Therefore, the occurrence of turbulence in the processing space can be suppressed, and the turbulence can be prevented from causing impurities to adhere to the substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 It is a diagram showing a schematic structure of an embodiment of a substrate processing apparatus according to the present invention.

[0014] Figure 2A-2C It is a diagram schematically showing the flow path of the treatment fluid.

[0015] Figure 3A-3B This is a diagram illustrating the structure around the opening of the chamber.

[0016] Figure 4 It is a cross-sectional view schematically showing the flow of the processing fluid introduced into the processing space.

[0017] Figure 5 It is a cross-sectional view schematically showing the flow of the processing fluid discharged from the processing space.

[0018] Figure 6A-6B It is a diagram schematically showing the relationship between the position of the discharge flow path and the flow of the treated fluid.

[0019] Figure 7A-7B It is a diagram illustrating other structures around the opening of the processing chamber.

[0020] Description of reference numerals:

[0021] 1Substrate processing device

[0022] 11-13 First to third components (chamber body)

[0023] 14 cover (chamber)

[0024] 15 Support tray (substrate holding part)

[0025] 16 Sealing member

[0026] 17 flow path (introduction flow path)

[0027] 57 Fluid supply unit

[0028] 100, 100a chamber (chamber body, chamber)

[0029] 101 opening

[0030] 172, 174 buffer space (expansion space)

[0031] 181 Upper flow path

[0032] 182, 186 buffer space

[0033] 183, 187 discharge flow path

[0034] 185 lower flow path

[0035] S substrate

[0036] SP processing space DETAILED DESCRIPTION

[0037] Figure 1 1 is a diagram showing a schematic structure of an embodiment of a substrate processing device of the present invention. The substrate processing device 1 is a device for processing the surface of various substrates such as semiconductor substrates using a supercritical fluid. Figure 1 As shown, an XYZ rectangular coordinate system is set. Among them, the XY plane is a horizontal plane, and the Z direction represents the vertical direction. More specifically, the (-Z) direction represents the vertical downward direction.

[0038] Among them, as the "substrate" in this embodiment, various substrates can be applied, such as semiconductor wafers, glass substrates for photomasks, glass substrates for liquid crystal displays, glass substrates for plasma displays, substrates for FED (Field Emission Display), substrates for optical disks, substrates for magnetic disks, substrates for optical and magnetic disks, etc. In the following, a substrate processing device for processing semiconductor wafers is mainly used as an example and described with reference to the drawings, but it can also be applied to the processing of various substrates exemplified above.

[0039] The substrate processing apparatus 1 includes a processing unit 10, a supply unit 50, and a control unit 90. The processing unit 10 is a main body for executing supercritical drying processing, and the supply unit 50 supplies the processing unit 10 with chemical substances and power required for the processing.

[0040] The control unit 90 controls each part of these devices and implements a predetermined process. For this purpose, the control unit 90 includes: a CPU 91 that executes various control programs; a memory 92 that temporarily stores processing data; a storage device 93 that stores the control program executed by the CPU 91; and an interface 94 for exchanging information with a user or an external device. The CPU 91 executes the control program written in advance in the storage device 93 and causes each part of the device to perform a predetermined action, thereby implementing the action of the device described below.

[0041] The processing unit 10 has a processing chamber 100. The processing chamber 100 has a first member 11, a second member 12, and a third member 13, each of which is formed of a metal block. The first member 11 and the second member 12 are combined in the up and down direction by a connecting member not shown in the figure, and the side surfaces of the (+Y) side of the first member 11 and the second member 12 are combined with the third member 13 by a connecting member not shown in the figure, thereby forming a processing chamber 100 with a cavity formed inside. The internal space of the cavity becomes a processing space SP for processing the substrate S. The substrate S to be processed is moved into the processing space SP and processed. A slit-shaped opening 101 extending elongatedly along the X direction is formed on the side surface of the (-Y) side of the processing chamber 100, and the processing space SP is connected to the external space via the opening 101.

[0042] A cover 14 is provided on the side of the (-Y) side of the processing chamber 100 to close the opening 101. A flat support tray 15 is installed in a horizontal position on the side of the (+Y) side of the cover 14, and the upper surface of the support tray 15 forms a support surface capable of placing the substrate S. More specifically, a recess 152 is provided on the substantially flat upper surface 151 of the support tray 15, and the plane dimension of the recess 152 is slightly larger than the substrate S. The substrate S is accommodated in the recess 152, so that the substrate S is held at a predetermined position on the support tray 15. The substrate S is held with the surface Sa to be processed (hereinafter, simply referred to as the "substrate surface") facing upward. At this time, it is preferred that the upper surface 151 of the support tray 15 is flush with the substrate surface Sa.

[0043] The cover 14 is supported by a support mechanism (not shown) in a manner that it can freely translate in the Y direction. In addition, the cover 14 can move forward and backward relative to the processing chamber 100 through an advance and retreat mechanism 53 provided in the supply unit 50. Specifically, the advance and retreat mechanism 53 includes a direct-acting mechanism such as a linear motor, a direct-acting guide, a ball screw mechanism, a solenoid, and a cylinder, and such a direct-acting mechanism moves the cover 14 in the Y direction. The advance and retreat mechanism 53 operates according to a control command of the control unit 90.

[0044] The cover 14 moves in the (-Y) direction, thereby pulling the support tray 15 out from the processing space SP through the opening 101, and the support tray 15 can be loaded from the outside. That is, the substrate S can be placed on the support tray 15, and the substrate S placed on the support tray 15 can be taken out. On the other hand, the cover 14 moves in the (+Y) direction, thereby accommodating the support tray 15 in the processing space SP. If the substrate S is placed on the support tray 15, the substrate S is carried into the processing space SP together with the support tray 15.

[0045] In the supercritical drying process, the main purpose of which is to prevent pattern collapse caused by the surface tension of the liquid and to dry the substrate, the substrate S is carried in a state where its surface Sa is covered with a liquid film in order to prevent the surface Sa of the substrate S from being exposed and causing pattern collapse. As the liquid constituting the liquid film, for example, an organic solvent with low surface tension such as isopropyl alcohol (IPA) and acetone can be suitably used.

[0046] The cover 14 moves in the (+Y) direction and closes the opening 101, so that the processing space SP is sealed. A sealing member 16 is provided between the (+Y) side surface of the cover 14 and the (-Y) side surface of the processing chamber 100 to maintain the airtight state of the processing space SP. As the sealing member 16, an elastic resin material, such as an annular member formed of rubber, can be used. In addition, the cover 14 is fixed relative to the processing chamber 100 by a locking mechanism not shown in the figure. In this way, the substrate S is processed in the processing space SP while ensuring the airtight state of the processing space SP.

[0047] In this embodiment, a fluid of a substance that can be used for supercritical processing, such as carbon dioxide, is supplied in a gaseous or liquid state from a fluid supply unit 57 provided in the supply unit 50 to the processing unit 10. Carbon dioxide has the property of becoming a supercritical state at low temperature and low pressure and well dissolving an organic solvent commonly used for substrate processing, and thus, carbon dioxide is a chemical substance suitable for supercritical drying processing.

[0048] More specifically, as a processing fluid for processing the substrate S, the fluid supply unit 57 outputs a fluid in a supercritical state, or a fluid supplied in a gaseous or liquid state and forming a supercritical state after applying a specified temperature and pressure. For example, gaseous or liquid carbon dioxide is output in a pressurized state. The fluid is pressurized to the input ports 102 and 103 provided on the (+Y) side of the processing chamber 100 via the pipe 571 and the valves 572 and 573 installed on the pipe 571. That is, the valves 572 and 573 are opened according to the control command of the control unit 90, so that the fluid is transported from the fluid supply unit 57 to the processing chamber 100.

[0049] Figure 2A-2C is a diagram schematically showing the flow path of the processing fluid. More specifically, Figure 2A is a schematic diagram showing the outline of the flow path, Figure 2B is its top view. In addition, Figure 2C is a side cross-sectional view of the flow path. Figure 1 and Figure 2A-2C The structure of the flow path of the processing fluid will be described.

[0050] The flow path 17 for the fluid that reaches the processing space SP from the input ports 102 and 103 functions as an introduction flow path that introduces the processing fluid supplied from the fluid supply unit 57 into the processing space SP. Specifically, the input port 102 is connected to a flow path 171. A buffer space 172 whose flow path cross-sectional area is rapidly expanded is provided at the end of the flow path 171 on the opposite side to the input port 102.

[0051] A flow path 173 is further provided to connect the buffer space 172 and the processing space SP. The flow path 173 has a cross-sectional shape that is narrow in the vertical direction (Z direction) but long in the horizontal direction (X direction), and the cross-sectional shape is substantially constant in the flow direction of the processing fluid. The end of the flow path 173 on the side opposite to the buffer space 172 forms a nozzle 174 disposed facing the processing space SP, and the processing fluid is introduced into the processing space SP from the nozzle 174.

[0052] Preferably, when the support tray 15 is accommodated in the processing space SP, the height of the flow path 173 is equal to the distance between the top surface of the processing space SP and the substrate surface Sa. In addition, the ejection port 174 opens facing the interval between the top surface of the processing space SP and the upper surface 151 of the support tray 15. For example, the top surface of the flow path 173 can be set to be flush with the top surface of the processing space SP. In this way, the ejection port 174 opens in a horizontally elongated slit shape in a manner facing the processing space SP.

[0053] Similarly, a flow path for the processing fluid is formed below the support tray 15. Specifically, the input port 103 is connected to the flow path 175. At the end of the flow path 175 on the opposite side from the input port 103, a buffer space 176 is provided where the cross-sectional area of ​​the flow path is rapidly expanded.

[0054] Furthermore, the buffer space 176 and the processing space SP are connected via the flow path 177. The flow path 177 has a cross-sectional shape that is narrow in the vertical direction (Z direction) but long in the horizontal direction (X direction), and the cross-sectional shape is substantially constant in the flow direction of the processing fluid. The end of the flow path 177 on the side opposite to the buffer space 176 forms a nozzle 178 disposed facing the processing space SP, and the processing fluid is introduced into the processing space SP from the nozzle 178.

[0055] Preferably, the height of the flow path 177 is equal to the distance between the bottom surface of the processing space SP and the lower surface of the support tray 15. In addition, the ejection port 178 opens facing the gap between the bottom surface of the processing space SP and the lower surface of the support tray 15. For example, the bottom surface of the flow path 177 can be set to be flush with the bottom surface of the processing space SP. In other words, the ejection port 178 opens in a horizontally elongated slit shape in a manner facing the processing space SP.

[0056] Preferably, the arrangement position of the flow path 171 is different from the arrangement position of the flow path 173 in the Z direction. If the two are located at the same height, a part of the treatment fluid flowing from the flow path 171 into the buffer space 172 will directly enter the flow path 173, so that in the width direction of the flow path perpendicular to the flow direction, that is, the X direction, the flow rate and flow velocity of the treatment fluid flowing into the flow path 173 will be different between the position corresponding to the flow path 171 and the position outside thereof. This will cause the flow of the treatment fluid flowing from the flow path 173 into the processing space SP to be uneven in the X direction, causing turbulence.

[0057] By arranging the flow path 171 and the flow path 173 at different positions in the Z direction, the processing fluid does not directly enter the flow path 173 from the flow path 171, and the processing fluid can be introduced into the processing space SP as a uniform laminar flow in the width direction.

[0058] The processing fluid introduced from the inlet flow path 17 constructed in this way flows along the upper surface and the lower surface of the support tray 15 in the processing space SP, and is discharged outside the chamber through the flow path 18 constructed as described below. On the (-Y) side closer to the substrate S, the top surface of the processing space SP and the upper surface 151 of the support tray 15 both form a horizontal plane, and the two are parallel to each other with a certain interval. This interval acts as an upper flow path 181, which is used to guide the processing fluid flowing along the upper surface 151 of the support tray 15 and the surface Sa of the substrate S to the exhaust flow path described later. That is, the upper flow path 181 has a cross-sectional shape that is narrow in the up-down direction (Z direction) but long in the horizontal direction (X direction).

[0059] The end of the upper flow path 181 on the side opposite to the processing space SP is connected to a buffer space 182. The detailed structure will be described later. The buffer space 182 is a space surrounded by the chamber 100, the cover 14, and the sealing member 16. The width of the buffer space 182 in the X direction is greater than or equal to the width of the upper flow path 181, and the height of the buffer space 182 in the Z direction is higher than the height of the upper flow path 181. Therefore, the buffer space 182 has a larger flow path cross-sectional area than the upper flow path 181.

[0060] The upper part of the buffer space 182 is connected to a discharge flow path 183. The discharge flow path 183 is a through hole provided through the first member 11 constituting the upper block of the chamber 100. Its upper end constitutes an output port 104 opened on the upper surface of the chamber 100, and its lower end opens toward the buffer space 182.

[0061] Similarly, the bottom surface of the processing space SP and the lower surface of the support tray 15 are both formed as horizontal planes, and the two are parallel and face each other with a certain distance. The distance functions as a lower flow path 185, which is used to guide the processing fluid flowing along the lower surface of the support tray 15 to the discharge flow path. That is, the lower flow path 185 has a cross-sectional shape that is narrow in the vertical direction (Z direction) but long in the horizontal direction (X direction).

[0062] The end of the lower flow path 185 on the side opposite to the processing space SP is connected to a buffer space 186. Similar to the buffer space 182, the buffer space 186 is a space surrounded by the chamber 100, the cover 14, and the sealing member 16. The width of the buffer space 186 in the X direction is greater than or equal to the width of the lower flow path 185, and the height of the buffer space 186 in the Z direction is higher than the height of the lower flow path 185. Therefore, the buffer space 186 has a larger flow path cross-sectional area than the lower flow path 185.

[0063] The lower part of the buffer space 186 is connected to the discharge flow path 187. The discharge flow path 187 is a through hole provided through the second member 12 constituting the lower block of the chamber 100. Its lower end constitutes the output port 105 opened on the lower surface of the chamber 100, and its upper end opens toward the buffer space 186.

[0064] In the processing space SP, the processing fluid flowing above the support tray 15 is delivered to the output port 104 via the upper flow path 181, the buffer space 182 and the discharge flow path 183. The output port 104 is connected to the fluid recovery unit 55 via the pipe 551, and the valve 552 is installed on the pipe 551.

[0065] Likewise, in the processing space SP, the processing fluid flowing under the support tray 15 is delivered to the output port 105 via the lower flow path 185, the buffer space 186 and the discharge flow path 187. The output port 105 is connected to the fluid recovery unit 55 via the pipe 553, and the valve 554 is installed on the pipe 553.

[0066] The valves 552 and 554 are controlled by the control unit 90 . When the valves 552 and 554 are opened according to the control command of the control unit 90 , the processing fluid in the processing space SP is recovered to the fluid recovery unit 55 through the pipes 551 and 553 .

[0067] like Figure 2A and Figure 2CAs shown in FIG. 1 , the processing fluid pressure-sent from the fluid supply unit 57 to the input port 102 is discharged to the buffer space 172, which is a large space, via the flow path 171. Even when the fluid is supplied in a liquid state, it may vaporize and expand in the flow path due to changes in pressure loss in the flow path, etc. If such a rapid expansion occurs near the substrate S, the substrate S may be damaged.

[0068] In order to avoid this situation, a portion of the flow path 171 that reaches the processing space SP is provided with a portion where the pressure loss changes greatly, so that the gasification and expansion that may be caused occur in this portion. The buffer space 172 is a space provided for this purpose. In addition, the buffer space 172 also functions as a manifold, rectifying the fluid flowing in the tubular flow path 171 so that the fluid can be supplied to the processing space SP in a thin layer. The function of the buffer space 176 is the same.

[0069] like Figure 2A As schematically indicated by the dotted arrow in the figure, the processing fluid supplied from the buffer space 172 to the processing space SP through the flow path 173 having a constant flow path cross-sectional area and the ejection port 174 passes over the substrate surface Sa as a laminar flow maintaining a constant width and a constant thickness. Similarly, the processing fluid supplied from the buffer space 176 to the processing space SP through the flow path 177 having a constant flow path cross-sectional area and the ejection port 178 flows along the lower surface of the support tray 15 as a laminar flow maintaining a constant width and a constant thickness.

[0070] The processing fluid that has passed around the substrate S further flows to the downstream side via the upper flow path 181 and the lower flow path 185. Among them, because the cross-sectional shape of the flow path remains roughly the same, the laminar flow state can be maintained. After the processing fluid that has flowed through the upper flow path 181 and the lower flow path 185 is discharged to the buffer space 182, 186, it is discharged outside the chamber via the exhaust flow paths 183, 187. In this way, the processing fluid in the processing space SP flows in one direction, specifically, in the (-Y) direction. Therefore, turbulence of the processing fluid around the substrate S can be avoided.

[0071] When the processing space SP is observed from the opening 101, Figure 2C As schematically indicated by the dotted arrow in the figure, the processing fluid flows from the (+Y) side (inner side) to the (-Y) side (outer side) of the substrate S in the processing space SP as a substantially uniform continuous laminar flow. Usually, a clean processing fluid is supplied from the inner side of the processing space SP, and the processing fluid passing through the periphery of the substrate S flows to the downstream side, i.e., the opening 101 side. Therefore, the residual liquid components and the like released from the substrate S are flushed to the opening 101 along one direction together with the processing fluid, and the residual liquid components and the like released from the substrate S can be prevented from being transported by the turbulent flow around the substrate S and attached to the substrate S again.

[0072] like Figure 2A As shown in FIG. 1 , a pair of discharge flow paths 183, 183 are respectively provided near both ends of the buffer space 182 extending elongated in the X direction. Figure 2B As shown, the openings of the discharge flow paths 183, 183 facing the buffer space 182 are preferably provided at positions further outward than both ends in the X direction of the substrate S accommodated in the processing space SP. The reason for this will be described in detail later.

[0073] Figure 3A-3B : is a diagram illustrating the structure around the opening of the chamber. More specifically, Figure 3A 1 is an external view showing the opening 101 of the chamber 100. Figure 3B In order to easily observe the internal structure of the chamber 100, Figure 3A The sealing member 16 and the boundary line between the first member 11 and the second member are omitted in the figure, and instead, hidden lines (dashed lines) are used to indicate the boundary line between the first member 11 and the second member. Figure 3A Hidden structure in .

[0074] As shown in these figures, an annular sealing member 16 is provided on the end surface of the (-Y) side of the chamber 100, and an opening 101 is provided in the internal area surrounded by the sealing member 16. More specifically, on the end surfaces of the (-Y) side of the first member 11 and the second member 12 constituting the chamber 100, recesses 111 and 121 whose surfaces are recessed toward the (+Y) side are provided. In addition, a flange-shaped partition wall 112 is provided protruding toward the (-Y) direction at the lower end of the recess 111 of the first member 11, and the width of the partition wall 112 in the X direction is equal to or slightly larger than the width of the processing space SP, and is thin in the up-down direction (Z direction). In addition, a flange-shaped partition wall 122 is also provided protruding toward the (-Y) direction at the upper end of the recess 121 of the second member 12, and the width of the partition wall 122 in the X direction is equal to or slightly larger than the width of the processing space SP, and is thin in the up-down direction (Z direction).

[0075] The front end of the (-Y) side of the isolation walls 112 and 122 and the end surfaces of the (-X) side and (+X) side of the recesses 111 and 121 form the opening 101. The lower surface of the isolation wall 112 is flush with the top surface of the processing space SP, and on the other hand, the upper surface of the isolation wall 122 is flush with the bottom surface of the processing space SP. In other words, the space sandwiched by the isolation walls 112 and 122 is formed as the end of the (-Y) side of the processing space SP connected to the opening 101. In this way, the isolation wall 112 is formed as a isolation wall that divides the inside of the recess 111 into the processing space SP and the upper space adjacent thereto, and on the other hand, the isolation wall 122 is formed as a isolation wall that divides the inside of the recess 121 into the processing space SP and the lower space adjacent thereto.

[0076] The upper space above the partition wall 112 is closed by the cover 14 at the (-Y) side opening to form a buffer space 182. In addition, the lower space below the partition wall 122 is closed by the cover 14 at the (-Y) side opening to form a buffer space 186. Discharge flow paths 183, 183 are connected near both ends in the X direction of the upper surface of the recess 111. The discharge flow paths 183, 183 are connected to the output ports 104, 104 provided on the upper surface of the first member 11. In addition, discharge flow paths 187, 187 are connected near both ends in the X direction of the lower surface of the recess 121. The discharge flow paths 187, 187 are connected to the output ports 105, 105 provided on the lower surface of the second member 12.

[0077] Figure 4 1 is a cross-sectional view schematically showing the flow of the processing fluid introduced into the processing space. The flow of the processing fluid above the substrate S is as follows. The arrow schematically shows the flow direction of the processing fluid. The processing fluid that is pressurized to the flow path 171 is discharged into a spacious space in the buffer space 172 to adjust the pressure, and then is introduced into the processing space SP from the nozzle 174 through the flow path 173 that is narrow in the vertical direction but wide in the horizontal direction.

[0078] The cross-sectional shapes of the flow path 173 and the ejection port 174 are roughly equal to the space between the top surface of the processing space SP and the substrate S (support tray 15), so the processing fluid flows in a laminar state from the flow path 173 to the processing space SP. Therefore, the processing fluid flows further downstream, i.e., the (+Y) side, as a laminar flow along the substrate surface Sa. Similarly, below the substrate S (support tray 15), the processing fluid that is pressurized to the flow path 175 is introduced into the processing space SP from the ejection port 178 via the buffer space 176 and the flow path 177, and flows below the support tray 15 as a laminar flow.

[0079] Figure 5 1 is a cross-sectional view schematically showing the flow of the processing fluid discharged from the processing space. The flow of the processing fluid above the substrate S is as follows. The arrow schematically shows the direction of the flow of the processing fluid. The cover 14 closes the opening 101, and in a state where the support tray 15 carrying the substrate S is placed in the processing space SP, the cover 14 changes the flow direction of the processing fluid flowing in the (-Y) direction in the processing space SP to the up-down direction, and the processing fluid is finally discharged to the outside of the chamber via the buffer spaces 182, 186 and the exhaust flow paths 183, 187.

[0080] The processing fluid flowing along the substrate surface Sa flows in the (-Y) direction in the upper flow path 181 formed between the top surface of the processing space SP and the support tray 15 while maintaining a laminar flow. Then, the processing fluid hits the (+Y) side surface of the cover 14, changes the flow direction to upward, and flows into the buffer space 182. In the buffer space 182, the processing fluid flows in the (+Y) direction and is discharged to the outside through the exhaust flow path 183 connected to the upper part. In other words, when flowing from the upper flow path 181 into the buffer space 182, the flow direction of the processing fluid is reversed. In addition, the direction of the flow path also changes 90 degrees between the buffer space 182 and the exhaust flow path 183.

[0081] In this way, the treated fluid that has passed through the upper flow path 181 changes its flow direction and is eventually discharged out of the chamber. When flowing from the upper flow path 181 with a small flow path cross-sectional area into the buffer space 182 with a large flow path cross-sectional area, the treated fluid releases its pressure and flows into the buffer space 182 with great force. Also, at this time, the flow direction changes, and the flow path resistance of the upper flow path 181 observed from the buffer space 182 becomes larger. Therefore, in the buffer space 182, although a vortex will be generated in the treated fluid, the treated fluid will not flow back toward the narrow upper flow path 181 in the opposite direction to the high-pressure ejected flow. Figure 2A As shown, the buffer space 182 is extended in the X direction. Specifically, the width in the X direction is the same as or slightly larger than the width of the upper flow path 181 .

[0082] like Figure 5 As shown, the buffer space 182 is formed by closing the opening surface of the recess 111 with the cover 14, wherein the recess 111 is provided on the end surface of the (-Y) side of the first member 11 constituting the upper part of the chamber 100. The buffer space 182 is a space surrounded by the first member 11, the cover 14, and the sealing member 16, and the sealing member 16 is provided in the gap between the first member 11 and the cover 14. Therefore, a part of the sealing member 16 is exposed to the buffer space 182, and the treatment fluid filling the buffer space 182 inevitably contacts the sealing member 16. If the sealing member 16 is made of rubber, organic components may be dissolved and mixed into the treatment fluid as impurities.

[0083] As shown by the dotted arrow, a flow is formed in the buffer space 182, that is, a part of the treatment fluid flows into the gap between the cover 14 and the first member 11, contacts the sealing member 16, and then returns to the buffer space 182. Since the flow direction of the treatment fluid changes to upward when flowing from the upper flow path 181 into the buffer space 182, it is easier to actively form a flow that sends the treatment fluid to the side of the sealing member 16.

[0084] Therefore, the impurities mixed in from the sealing member 16 are separated from the sealing member 16 in a state of being mixed in the processing fluid in the buffer space 182, and are discharged from the buffer space 182 together with the processing fluid. In this way, it is not easy to cause the retention of the processing fluid containing impurities around the sealing member 16, so the problem of gradually increasing impurity concentration can be avoided. In addition, the processing fluid in the buffer space 182 will not flow back to the upper side flow path 181 but will be discharged to the outside. Therefore, it is possible to effectively prevent the impurities freed from the sealing member 16 from adhering to the substrate S in the processing space SP and contaminating the substrate S.

[0085] In order to effectively prevent the processing fluid from flowing back from the buffer space 182 to the upper flow path 181, an effective approach is to make the flow path cross-sectional area of ​​the connection portion between the upper flow path 181 and the buffer space 182 change sharply. In other words, it is preferred to keep the cross-sectional area and shape of the flow path of the processing fluid as constant as possible before reaching the buffer space 182. To achieve this goal, it is preferred that the distance between the partition walls 112, 122 and the cover 14 when the cover 14 closes the opening 101, that is, the distance between the front end of the partition walls 112, 122 on the (-Y) side and the main surface of the cover 14 on the (+Y) side is equal to the height of the upper flow path 181, that is, equal to the distance between the top surface of the processing space SP and the upper surface 151 of the support tray 15.

[0086] The same is true for the processing fluid flowing under the support tray 15. The processing fluid is discharged from the lower flow path 185 formed between the lower surface of the support tray 15 and the bottom surface of the processing space SP to the buffer space 186, thereby preventing the processing fluid from flowing back to the lower flow path 185. In addition, impurities that are released from the sealing member 16 and mixed into the buffer space 186 are discharged to the outside from the discharge flow path 187 together with the processing fluid. Therefore, it is possible to prevent impurities generated by the sealing member 16 from entering the processing space SP and contaminating the substrate S.

[0087] As described above, as impurities mixed into the processing fluid, in addition to impurities generated by the sealing member 16, there may also be impurities that are scattered from the outside and attached to the opening 101 or the cover 14 when the substrate S is carried in. The present embodiment is also effective in solving the problem of contamination of the substrate S caused by such impurities. This is because, as viewed from the opening 101, the processing fluid is supplied from a position closer to the inside than the substrate S, and the flow of the processing fluid in the processing space SP is restricted to one direction toward the outside, so even if impurities are mixed into the processing fluid around the opening 101, it can be prevented from flowing back to the processing space SP and attaching to the substrate S before it happens.

[0088] like Figure 2A and Figure 3BAs shown, the discharge flow path 183 (187) for discharging the treated fluid from the buffer space 182 (186) is connected to both ends of the buffer space 182 (186) in the X direction. Figure 6A-6B To explain the reasons for doing so.

[0089] Figure 6A-6B 1 is a diagram schematically showing the relationship between the position of the discharge flow path and the flow of the processing fluid. The inventor of the present application conducted a simulation experiment and analyzed the flow of the processing fluid by variously changing the connection position of the discharge flow path 183 (187) relative to the buffer space 182 (186), and obtained the following conclusion. In addition, from the perspective of forming the same laminar flow in the processing space SP, it is assumed that the configuration of the discharge flow path has symmetry in the X direction (i.e., relative to the YZ plane).

[0090] like Fig. 6A As shown by the arrow, the processing fluid flows in the (-Y) direction as a uniform laminar flow in the processing space SP, and flows from the flow path 181 (185) through the buffer space 182 (186) into the exhaust flow path 183 (187). When the exhaust flow path 183 (187) is connected to both ends of the buffer space 182 (186) in the X direction, the flow of the processing fluid in the buffer space 182 (186) is dispersed on both sides in the X direction. Therefore, the processing fluid maintains a roughly uniform flow in the X direction at least from the flow path 181 (185) to the flow into the buffer space 182 (186).

[0091] On the other hand, as a comparative example, if the discharge flow path is arranged closer to the center, for example Figure 6B If the discharge flow path P is configured as shown, the flow of the processing fluid toward the discharge flow path P through the buffer space 182 (186) is concentrated in the central part. Influenced by this, the flow of the processing fluid toward the central side is also generated in the flow path 181 (185). This causes turbulence in the processing space SP.

[0092] In addition, the processing fluid is concentrated in the central direction, so that Figure 6B The processing fluid may be retained near the two ends of the buffer space 182 (186) shown in the middle shaded area in the X direction. As described above, the processing fluid in the buffer space 182 (186) may contain impurities released from the substrate S or the sealing member 16. The retention of the processing fluid containing such impurities or the turbulence of the laminar flow in the processing space SP may increase the risk of impurities adhering to the substrate S and contaminating the substrate S. Even if a plurality of discharge flow paths P are configured to disperse the flow, as long as the processing fluid is configured to form a flow toward the center side, there is the same risk of disturbing the laminar flow.

[0093] Such a problem can be solved by arranging the discharge flow path 183 (187) near both ends of the buffer space 182 (186). Figure 2B As shown, it is particularly effective to set the exhaust flow path 183 (187) closer to the outside of the X direction than the X direction end of the substrate S in the processing space SP. In this way, turbulence of the processing fluid flowing along the substrate S can be avoided and impurities caused by the turbulent flow can be effectively prevented from being attached.

[0094] In addition, the example in which the partition wall separating the processing space SP and the buffer space 182 (186) is formed integrally with the first member 11 (second member 12) constituting the processing chamber 100 has been described above. More practically, the partition wall can be provided in the following structure.

[0095] Figure 7A-7B 2 is a diagram illustrating other structures around the opening of the processing chamber. More specifically, Fig. 7A FIG. 1 is an exploded view showing the periphery of the opening of the processing chamber 100 a of this example. Figure 7B is a diagram showing a cross-sectional structure around an opening. Figure 7A-7B and its description, the Figure 3A The structures having the same functions as in the illustrated example are given the same reference numerals, and detailed description thereof will be omitted.

[0096] In the processing chamber 100a, a recessed portion 101a whose surface is recessed toward the (+Y) side is provided on the side surface of the (-Y) side. An opening portion 101b connected to the processing space SP is provided in the central portion of the recessed portion 101a. An angular member having a substantially L-shaped cross section formed separately from the chamber 100a, namely, a partition wall forming member 112a is fixedly connected to the upper portion of the opening portion 101b by a fixing screw 113a. Similarly, a partition wall forming member 122a is fixedly connected to the lower portion of the opening portion 101b by a fixing screw 123a.

[0097] like Figure 7B As shown, with such a structure, the opening 101 communicating with the processing space SP and the recessed portions 111 and 121 provided above and below the opening 101 can be separated by the partition walls 112 and 122 .

[0098] As described above, in this embodiment, the processing chamber 100 mainly composed of the first to third members 11 to 13 functions as the "chamber body" of the present invention, and the processing chamber 100 and the cover 14 together constitute the "chamber" of the present invention. In addition, the support tray 15 functions as the "substrate holding portion" of the present invention, and the opening 101 is equivalent to the "opening portion" of the present invention. In addition, the flow path 17 is equivalent to the "introduction flow path" of the present invention, and the buffer spaces 172 and 176 are equivalent to the "enlarged space" of the present invention.

[0099] In addition, the present invention is not limited to the above-mentioned embodiments, and various changes other than the above-mentioned contents can be made as long as they do not deviate from the main purpose. For example, in the substrate processing device 1 of the above-mentioned embodiment, the inlet flow path, buffer space and exhaust flow path of the present invention are respectively provided corresponding to the upper and lower parts of the support tray 15 in the processing space. However, from the point of view of preventing turbulence from causing impurities to adhere to the substrate, it is sufficient to at least apply the present invention to the flow path of the processing fluid passing through the top of the substrate. This means that the flow path of the processing fluid flowing below the support tray 15 is not limited to the above-mentioned structure. However, because it is not possible to completely separate the flow above the support tray 15 and the flow below the support tray 15 from a physical point of view, it is most preferred to form a flow path structure that maintains laminar flow on the upper and lower sides of the support tray 15 as in the above-mentioned embodiment.

[0100] In the above embodiment, the cover 14 (through the sealing member 16 ) closes the recesses 111 and 121 provided on the side of the processing chamber 100 to form the buffer spaces 182 and 186 . However, the cover 14 may be provided for the recesses.

[0101] In addition, the various chemical substances used in the treatment of the above-mentioned embodiment are only some examples, and various substances can be used instead as long as they are consistent with the technical concept of the present invention.

[0102] As described above with reference to the specific embodiments, the substrate processing device of the present invention can be provided with an inlet flow path, a buffer space, and an exhaust flow path corresponding to the interval space formed by the gap between the top surface in the wall of the processing space and the upper surface of the substrate holding portion, and can be provided with an inlet flow path, a buffer space, and an exhaust flow path corresponding to the interval space formed by the gap between the bottom surface in the wall of the processing space and the lower surface of the substrate holding portion. From the viewpoint of preventing contamination of the substrate surface, at least the technical concept of the present invention can be applied to the flow path of the processing fluid passing through the top of the substrate. However, the same flow path structure is provided for the processing fluid flowing through the lower surface side of the substrate holding portion, thereby further improving the effect of preventing contamination caused by turbulence.

[0103] In addition, for example, the opening connected to the exhaust flow path can also be arranged at a position further outward than the two ends of the substrate in the width direction when viewed from above. According to such a structure, at least the processing fluid passing through the substrate can be maintained in a laminar state without generating a flow toward the center side in the width direction.

[0104] In addition, for example, when viewed from the substrate, one end may be the end on the opposite side of the opening of the processing space in the flow direction; when viewed from the substrate, the other end may be the end on the opening side of the two ends. According to such a structure, the flow direction of the processing fluid is to flow in one direction from the processing space closer to the inside than the substrate toward the outside as viewed from the opening. Around the opening of the chamber that needs to be opened and closed each time the substrate is moved in and out, impurities generated by, for example, sealing components for maintaining airtightness and impurities mixed from the outside cannot be avoided. By setting the processing fluid to flow from a position closer to the inside than the substrate toward the opening side and suppressing the occurrence of turbulence, such impurities can be prevented from adhering to the substrate.

[0105] In addition, for example, in the case where the chamber has a chamber body provided with a cavity serving as a processing space and a cover portion that closes an opening portion via a sealing member, the buffer space may be a space surrounded by the cover portion, the chamber, and the sealing member. In a structure where the opening portion is closed via a sealing member, it is not possible to avoid a portion of the sealing member being exposed to the flow path and contacting the processing fluid. If the sealing member is configured to be exposed to the buffer space that is closer to the downstream than the processing space and to maintain a laminar flow in the processing space, even if there are impurities mixed into the processing fluid from the sealing member, it is possible to avoid them from adhering to the substrate.

[0106] In addition, for example, the flow direction of the processing fluid can be changed by more than 90 degrees at the connection between the partition space and the buffer space. According to such a structure, since the flow resistance of the flow path on the upstream side becomes larger when viewed from the buffer space, the effect of preventing backflow from the buffer space to the processing space can be improved.

[0107] In addition, for example, an expansion space having a flow path cross-sectional area larger than that of the upstream side in the flow direction is provided in the middle of the inlet flow path, and the flow direction can be changed by more than 90 degrees in the flow path from the expansion space to the ejection port. According to such a structure, the treatment fluid flowing in from the outside can be temporarily stored in the expansion space and rectified, and then supplied to the treatment space.

[0108] In this case, further, the inlet flow path closer to the downstream side than the expansion space in the flow direction can have a constant cross-sectional shape until the ejection port. According to such a structure, the cross-sectional shape of the flow path before being introduced into the processing space is the same within a certain length range, so the laminar flow when introduced into the processing space can be further rectified.

[0109] Furthermore, the length of the expanded space in the width direction may be greater than or equal to the length of the inlet flow path closer to the downstream side than the expanded space in the flow direction. If the width of the flow path closer to the downstream side than the expanded space is greater than the width of the expanded space, the treated fluid flowing in the flow path has a motion component in a direction that expands in the horizontal direction. In this way, having a directional component different from the flow direction causes turbulence. When flowing from the expanded space into the flow path on the downstream side, this problem can be avoided by maintaining the flow path width or throttling.

[0110] In these cases, it is preferred that the opening position of the inlet flow path closer to the upstream side than the expanded space in the flow direction and the opening position of the inlet flow path closer to the downstream side than the expanded space facing the expanded space do not overlap in the vertical direction. If these opening positions overlap, a portion of the treatment fluid flowing into the expanded space will directly enter the flow path on the downstream side. Therefore, in the flow path on the downstream side, at least one of the inflow amount and flow rate of the treatment fluid at the opening position of the flow path on the upstream side and the position outside it becomes different, and such unevenness will cause turbulence. The opening positions are set to be non-overlapping, so that the problem of linear entry of the treatment fluid can be solved and a more uniform laminar flow can be formed.

[0111] The present invention is applicable to all substrate processing devices that process substrates using a processing fluid introduced into a chamber, and is particularly applicable to processing using a high-pressure fluid, for example, substrate drying processing of substrates such as semiconductor substrates using a supercritical fluid.

Claims

1. A substrate processing device, which processes the surface of a substrate using a processing fluid, wherein: have: A flat plate-shaped substrate holding portion, capable of placing the substrate in a horizontal position on an upper surface of the substrate holding portion; A chamber having a processing space inside and an opening on a side, wherein the processing space can accommodate the substrate holding portion carrying the substrate, and the opening is connected to the processing space and allows the substrate holding portion to pass through. The chamber is provided with an inlet flow path communicating with the processing space and receiving the processing fluid supplied from outside the chamber, a buffer space communicating with the processing space, and a discharge flow path discharging the processing fluid from the buffer space to outside the chamber. The inlet flow path is connected to a nozzle opening facing a partition space at one end of the processing space in a plan view, the partition space is formed by a gap between a top surface of a wall surface of the processing space and an upper surface of the substrate holding portion, and the shape of the nozzle and the cross-sectional shape of the flow path leading to the nozzle are substantially the same as the cross-sectional shape of the partition space. The buffer space is connected to the processing space at the other end opposite to the one end across the substrate in a plan view, and has a width substantially the same as that of the spacing space in a width direction perpendicular to a flow direction of the processing fluid from the one end toward the other end. The discharge flow paths are respectively connected to a pair of openings provided at both ends of the buffer space in the width direction.

2. The substrate processing apparatus according to claim 1, wherein: The introduction flow path, the buffer space, and the exhaust flow path are provided corresponding to a spacing space formed by a gap between a bottom surface of a wall surface of the processing space and a lower surface of the substrate holding portion.

3. The substrate processing apparatus according to claim 1, wherein: The opening connected to the discharge flow path opens at a position further outward than both ends of the substrate in the width direction in a plan view.

4. The substrate processing apparatus according to claim 1, wherein: The one end portion is an end portion on the side opposite to the opening portion among the two ends of the processing space in the flow direction when viewed from the substrate. The other end portion is an end portion on the opening portion side of the two end portions when viewed from the substrate.

5. The substrate processing apparatus according to claim 1, wherein: The chamber has: A chamber body is provided with a cavity which becomes the processing space; a cover portion that closes the opening portion via a sealing member, The buffer space is a space surrounded by the cover, the chamber, and the sealing member.

6. The substrate processing apparatus according to claim 1, wherein: At the connection portion between the partition space and the buffer space, the flow direction of the treatment fluid changes by more than 90 degrees.

7. The substrate processing apparatus according to any one of claims 1 to 6, wherein: An expansion space having a flow path cross-sectional area larger than that on the upstream side in the flow direction is provided in the middle of the introduction flow path, and the flow direction changes by 90 degrees or more in the flow path from the expansion space to the discharge port.

8. The substrate processing apparatus according to claim 7, wherein: The introduction flow path on the downstream side of the expansion space in the flow direction has a constant cross-sectional shape up to the discharge port.

9. The substrate processing apparatus according to claim 7, wherein: The length of the expanded space in the width direction is greater than or equal to the length of the introduction flow path on the downstream side of the expanded space in the flow direction.

10. The substrate processing apparatus according to claim 7, wherein: An opening position of the inlet flow path surface upstream of the enlarged space in the flow direction and an opening position of the inlet flow path surface downstream of the enlarged space in the flow direction to the enlarged space do not overlap in the vertical direction.

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