A Si-based insulated gate bipolar transistor IGBT structure and method thereof

Abstract

The present invention relates to the field of transistor technology, specifically to a Si-based insulated gate bipolar transistor IGBT structure and method thereof, a Si-based insulated gate bipolar transistor IGBT structure, comprising a bipolar transistor IGBT, the top of the outer wall of the bipolar transistor IGBT is fixedly sleeved with a cover plate, the top of the cover plate is provided with a slide groove, the inside of the slide groove is slidably connected with a wiring terminal, and the wiring terminal is electrically connected to the terminal of the bipolar transistor IGBT through a wire. The wiring terminal provided by the present invention can slide in the slide groove, and when the component connected to the bipolar transistor IGBT is not matched with the bipolar transistor IGBT, there is no need to redesign the internal structure of the bipolar transistor IGBT, and there is no need to use other tools for connection, and the position of the wiring terminal can be directly moved.

Description

Technical Field

[0001] The present invention relates to the technical field of transistors, and in particular to a Si-based insulated gate bipolar transistor (IGBT) structure and a method thereof. Background Art

[0002] IGBT, insulated gate bipolar transistor, is a composite fully controlled voltage-driven power semiconductor device composed of BJT and MOS, which has the advantages of both MOSFET's high input impedance and GTR's low on-state voltage drop. GTR has low saturation voltage drop and high current density, but large driving current; MOSFET has low driving power and fast switching speed, but large on-state voltage drop and low current density. IGBT combines the advantages of the above two devices, with low driving power and low saturation voltage drop. It is very suitable for use in converter systems with DC voltage of 600V and above, such as AC motors, inverters, switching power supplies, lighting circuits, traction drives and other fields.

[0003] The existing bipolar transistor IGBT terminals are fixed. When connecting other components, the terminals cannot be adjusted according to the positions of the components. When the component terminals do not match the positions of the bipolar transistor IGBT terminals, it is necessary to design the structure of the bipolar transistor IGBT terminals specifically, or use other tools for connection. Summary of the invention

[0004] The purpose of the present invention is to provide a Si-based insulated gate bipolar transistor IGBT structure and method thereof to solve the problems raised in the above background technology. To achieve the above purpose, the present invention provides the following technical solutions: a Si-based insulated gate bipolar transistor IGBT structure, comprising a bipolar transistor IGBT, the top of the outer wall of the bipolar transistor IGBT is fixedly sleeved with a cover plate, the top of the cover plate is provided with a slide groove, the inside of the slide groove is slidably connected with a wiring terminal, and the wiring terminal is electrically connected to the terminal of the bipolar transistor IGBT through a wire.

[0005] Preferably, the terminal comprises a tube body, a limit plate, a wiring groove and a copper conductive layer, the upper and lower ends of the outer wall of the tube body are sleeved with limit plates, both ends of the tube body are connected and installed with wiring grooves, the inner wall of the wiring groove is adhered with a copper conductive layer, and the two copper conductive layers are electrically connected through a conductive sheet.

[0006] Preferably, the conductive sheet is placed inside the tube body, a conductive copper rod is fixedly connected to the circular inner wall surface of the copper conductive layer, and a conductive copper ring is fixedly connected to the end of the conductive copper rod.

[0007] Preferably, a wire winder is rotatably mounted inside the wiring slot, and a terminal end of the wire winder passes through a side wall of the wiring slot and is placed outside the wiring slot.

[0008] Preferably, the wire winder includes a first support rod, a conductive block and a second support rod, one end of the first support rod penetrates the copper conductive layer and is rotatably connected to the inner wall of the wiring slot, the other end of the first support rod is fixedly connected to the conductive block, the end of the conductive block away from the first support rod is fixedly connected to the second support rod, the tip of the second support rod is rotatably penetrates the copper conductive layer and the side wall of the conductive sheet and is placed outside the wiring slot, the second support rod is fixedly connected to a knob at the end placed outside the wiring slot, and the first support rod is rotatably sleeved on the inside of a conductive copper ring and fits with the conductive copper ring.

[0009] Preferably, the wire winder further comprises a mounting hole and a winding groove, the mounting hole is provided at the central position of the conductive block, and the winding grooves are symmetrically provided on both sides of the mounting hole.

[0010] Preferably, the winding groove is a semicircular structure, and the conductive block is a shuttle-shaped structure.

[0011] A method for a Si-based insulated gate bipolar transistor (IGBT), the method comprising the following steps:

[0012] Step 1: Install and fix the bipolar transistor IGBT on the corresponding position of the PCB with screws;

[0013] Step 2: Adjust the position. According to the wiring position of the parts connected to the bipolar transistor IGBT, adjust the position of the wiring terminal. When adjusting the position of the wiring terminal, adjust the position of the wiring terminal by sliding the wiring terminal.

[0014] The third step: wiring, insert the wires of the components into the mounting hole of the winder, then turn the knob, the knob drives the conductive block to rotate through the second support rod, as the conductive block rotates, the wires of the components are driven to be wound around the surface of the conductive block, and finally the wires are engaged in the winding groove.

[0015] Compared with the prior art, the present invention has the following beneficial effects:

[0016] The wiring terminal provided in the present invention can slide in the slide groove. When the component connection connected to the bipolar transistor IGBT is not matched with the bipolar transistor IGBT, there is no need to redesign the internal structure of the bipolar transistor IGBT or use other tools for connection. The position of the wiring terminal can be directly moved.

[0017] The wiring terminal provided in the present invention can fix the wire inside by turning the knob, without the need to use other tools for auxiliary installation, thus facilitating the wiring work. This is different from the existing wiring terminal which requires the use of a screwdriver and screws to clamp the wire inside, and brings the benefit of not needing to use tools.

[0018] Of course, any product implementing the present invention does not necessarily need to achieve all of the advantages described above at the same time. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 It is a schematic diagram of the overall structure of the present invention;

[0020] Figure 2 For the present invention Figure 1 A cross-sectional view of

[0021] Figure 3 is a cross-sectional view of the wiring terminal of the present invention;

[0022] Figure 4 It is a schematic diagram of the structure of the wire winder of the present invention.

[0023] In the figure: 1. bipolar transistor IGBT; 2. cover plate; 3. slide groove; 4. terminal; 401. tube body; 402. limit plate; 403. wiring groove; 404. copper conductive layer; 405. conductive sheet; 406. conductive copper rod; 407. conductive copper ring; 5. wire; 6. winder; 601. first support rod; 602. conductive block; 603. second support rod; 604. knob; 605. mounting hole; 606. winding groove. DETAILED DESCRIPTION

[0024] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technical staff in this field without creative work are within the scope of protection of the present invention.

[0025] Embodiment 1:

[0026] See also Figures 1 to 4 The present invention provides a technical solution: a Si-based insulated gate bipolar transistor IGBT structure, including a bipolar transistor IGBT1, a cover plate 2 is fixedly sleeved on the top of the outer wall of the bipolar transistor IGBT1, a slide groove 3 is opened on the top of the cover plate 2, a wiring terminal 4 is slidably connected inside the slide groove 3, and the wiring terminal 4 is electrically connected to the terminal of the bipolar transistor IGBT1 through a wire 5.

[0027] In this embodiment, Figure 3 As shown, the terminal 4 includes a tube body 401, a limit plate 402, a wiring groove 403 and a copper conductive layer 404. The limit plates 402 are sleeved on the upper and lower ends of the outer wall of the tube body 401, and the two ends of the tube body 401 are connected and installed with the wiring groove 403. The inner wall of the wiring groove 403 is attached with the copper conductive layer 404, and the two copper conductive layers 404 are electrically connected through a conductive sheet 405.

[0028] In this embodiment, Figure 3 As shown, the conductive sheet 405 is placed inside the tube body 401 , a conductive copper rod 406 is fixedly connected to the circular inner wall surface of the copper conductive layer 404 , and a conductive copper ring 407 is fixedly connected to the end of the conductive copper rod 406 .

[0029] In this embodiment, Figure 3 and Figure 4 As shown, a wire winder 6 is rotatably installed inside the wiring slot 403 , and the end of the wire winder 6 passes through the side wall of the wiring slot 403 and is placed outside the wiring slot 403 .

[0030] In this embodiment, Figure 3 and Figure 4 As shown, the wire winder 6 includes a first support rod 601, a conductive block 602 and a second support rod 603, one end of the first support rod 601 penetrates the copper conductive layer 404 and is rotatably connected to the inner wall of the wiring groove 403, the other end of the first support rod 601 is fixedly connected to the conductive block 602, the end of the conductive block 602 away from the first support rod 601 is fixedly connected to the second support rod 603, the end of the second support rod 603 is rotatably penetrated through the copper conductive layer 404 and the side wall of the conductive sheet 405 and is placed outside the wiring groove 403, the second support rod 603 is fixedly connected with a knob 604 at one end placed outside the wiring groove 403, and the first support rod 601 is rotatably sleeved on the inside of the conductive copper ring 407 and fits therewith.

[0031] In this embodiment, Figure 3 and Figure 4 As shown, the wire winder 6 further includes a mounting hole 605 and a winding groove 606 . The mounting hole 605 is provided at the center of the conductive block 602 , and the winding grooves 606 are symmetrically provided on both sides of the mounting hole 605 .

[0032] In this embodiment, Figure 3 and Figure 4 As shown, the winding groove 606 is a semicircular structure, and the conductive block 602 is a shuttle-shaped structure.

[0033] The use method and advantages of the present invention: When the Si-based insulated gate bipolar transistor IGBT structure is used, the working process is as follows:

[0034] Use screws to fix the bipolar transistor IGBT1 in the corresponding position, and then adjust the position of the terminal 4 according to the wiring position of the components connected to the bipolar transistor IGBT1. When adjusting, just slide the position of the terminal 4. Through this operation, it is possible to avoid redesigning the structure of the bipolar transistor IGBT1 or using other external devices for connection. Then, insert the wires of the components connected to the bipolar transistor IGBT1 into the mounting hole 605 of the winder 6, turn the knob 604, the winder 6 starts to rotate, and then the wires are wound in the winding groove 606 on the surface of the winder 6. Since the first support rod 601 and the conductive block 602 are made of conductive materials, the current can pass through the conductive block 602, the first support rod 601, the conductive copper ring 407, the conductive copper rod 406, the two copper conductive layers 404 and the conductive sheet 405. Through this wiring method, there is no need to use a screwdriver, which facilitates the wiring work.

[0035] Embodiment 2:

[0036] A method for a Si-based insulated gate bipolar transistor IGBT, the method steps are as follows:

[0037] Step 1: Install and fix the bipolar transistor IGBT1 on the corresponding position of the PCB with screws;

[0038] Step 2: Adjust the position, according to the wiring position of the parts connected to the bipolar transistor IGBT1, adjust the position of the wiring terminal 4, when adjusting the position of the wiring terminal 4, adjust the position of the wiring terminal 4 by sliding the wiring terminal 4;

[0039] Step 3: Wiring. Insert the wires of the components into the mounting hole 605 of the winder 6. Then, turn the knob 604. The knob 604 drives the conductive block 602 to rotate through the second support rod 603. As the conductive block 602 rotates, the wires of the components are wound around the surface of the conductive block 602. Finally, the wires are engaged in the winding groove 606.

[0040] The above shows and describes the basic principles, main features and advantages of the present invention. Technical personnel in this industry should understand that the present invention is not limited to the above embodiments. The above embodiments and descriptions are only preferred examples of the present invention and are not used to limit the present invention. Without departing from the spirit and scope of the present invention, the present invention may have various changes and improvements, which fall within the scope of the present invention to be protected. The scope of protection of the present invention is defined by the attached claims and their equivalents.

Claims

1. A Si-based insulated gate bipolar transistor IGBT structure, comprising a bipolar transistor IGBT (1), characterized in that: The top of the outer wall of the bipolar transistor IGBT (1) is fixedly sleeved with a cover plate (2), the top of the cover plate (2) is provided with a slide groove (3), the interior of the slide groove (3) is slidably connected with a connection terminal (4), and the connection terminal (4) is electrically connected to a terminal of the bipolar transistor IGBT (1) via a wire (5).

2. A Si-based insulated gate bipolar transistor IGBT structure according to claim 1, characterized in that: The wiring terminal (4) comprises a tube body (401), a limit plate (402), a wiring slot (403) and a copper conductive layer (404); the limit plates (402) are sleeved on the upper and lower ends of the outer wall of the tube body (401); the wiring slots (403) are connected and installed at both ends of the tube body (401); the inner wall of the wiring slot (403) is attached with a copper conductive layer (404); and the two copper conductive layers (404) are electrically connected via a conductive sheet (405).

3. A Si-based insulated gate bipolar transistor IGBT structure according to claim 2, characterized in that: The conductive sheet (405) is placed inside the tube body (401), a conductive copper rod (406) is fixedly connected to the circular inner wall surface of the copper conductive layer (404), and the end of the conductive copper rod (406) is fixedly connected to a conductive copper ring (407).

4. The Si-based insulated gate bipolar transistor IGBT structure according to claim 2, characterized in that: A wire winder (6) is rotatably mounted inside the wiring slot (403), and the end of the wire winder (6) penetrates the side wall of the wiring slot (403) and is placed outside the wiring slot (403).

5. The Si-based insulated gate bipolar transistor IGBT structure according to claim 4, characterized in that: The wire winder (6) comprises a first support rod (601), a conductive block (602) and a second support rod (603); one end of the first support rod (601) penetrates the copper conductive layer (404) and is rotatably connected to the inner wall of the wiring slot (403); the other end of the first support rod (601) is fixedly connected to the conductive block (602); one end of the conductive block (602) away from the first support rod (601) is fixedly connected to the second support rod (603); the end of the second support rod (603) is rotatably penetrated through the copper conductive layer (404) and the side wall of the conductive sheet (405) and is placed outside the wiring slot (403); the second support rod (603) is fixedly connected to a knob (604) at one end placed outside the wiring slot (403); the first support rod (601) is rotatably sleeved inside the conductive copper ring (407) and fits therewith.

6. The Si-based insulated gate bipolar transistor IGBT structure according to claim 5, characterized in that: The wire winder (6) further comprises a mounting hole (605) and a winding groove (606); the mounting hole (605) is provided at the central position of the conductive block (602), and the winding grooves (606) are symmetrically provided on both sides of the mounting hole (605).

7. The Si-based insulated gate bipolar transistor IGBT structure according to claim 6, characterized in that: The winding groove (606) is a semicircular structure, and the conductive block (602) is a shuttle-shaped structure.

8. A method for obtaining a Si-based insulated gate bipolar transistor IGBT from a Si-based insulated gate bipolar transistor IGBT structure according to any one of claims 6 to 7, characterized in that: The method steps are as follows: Step 1: Install and fix the bipolar transistor IGBT (1) on the corresponding position of the PCB using screws; Step 2: adjusting the position, adjusting the position of the wiring terminal (4) according to the wiring position of the parts connected to the bipolar transistor IGBT (1), and adjusting the position of the wiring terminal (4) by sliding the wiring terminal (4); Step 3: Wiring: insert the wires of the components into the mounting hole (605) of the winder (6), then turn the knob (604), which drives the conductive block (602) to rotate via the second support rod (603). As the conductive block (602) rotates, the wires of the components are wound around the surface of the conductive block (602), and finally the wires are engaged in the winding groove (606).

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