A polymer lithium battery circuit and device for the Internet of Things

Abstract

The present invention discloses a polymer lithium battery circuit for the Internet of Things, the circuit includes a PMOS tube Q1, a PMOS tube Q2 and a boost chip U10, wherein: the source of the PMOS tube Q1 is connected to VBAT, the drain of the PMOS tube Q1 is connected to a communication module; the source of the PMOS tube Q2 is connected to the communication module, and the drain of the PMOS tube Q2 is respectively connected to pin 7 and pin 8 of the boost chip U10; pin 1 and pin 2 of the boost chip U10 are both grounded, and a resistor R6 is provided between pin 4 and pin 5 of the boost chip U10, and one end of the resistor R6 is connected to pin 4 of the boost chip U10. The embodiment of the present invention uses a boost circuit when the voltage is lower than 3.4V, which not only makes efficient use of the battery capacity, but also makes the battery conversion efficiency reach the optimal value, reducing the energy loss in the conversion process; when the voltage is 3.6V, since the body effect diode voltage drop inside the PMOS tube Q1 is greater than 0.6V, the boost circuit can be prevented from backflowing to the battery, reducing one anti-backflow MOS tube, and reducing the cost.

Description

Technical Field

[0001] The present invention belongs to the technical field of battery design, and in particular relates to a polymer lithium battery circuit and device for the Internet of Things. Background Art

[0002] In today's Internet of Everything, more and more IoT devices need to be powered by rechargeable polymer lithium batteries. The cut-off voltage of the polymer lithium battery is lower than 3V, while the power supply voltage of many IoT communication modules is greater than or equal to 3.4V. In this application, nearly 15% of the lithium battery power cannot be fully utilized, resulting in a waste of battery capacity and a shortened working time of the device.

[0003] Currently, most designs have two solutions: 1. Directly discard the battery capacity of polymer lithium batteries below 3.4V, but this will reduce the working time and increase the number of battery charging times, causing the battery to be damaged too quickly and increasing application costs; 2. Use a battery management chip, but this chip not only needs to support large current (≥2A) but also support buck-boost function, and this battery management chip is very expensive and is not suitable for use in most IoT solutions.

[0004] Therefore, how to fully utilize battery capacity while reducing battery costs has become a technical problem that needs to be solved urgently. Summary of the invention

[0005] In view of the above problems, the present invention provides a polymer lithium battery circuit for the Internet of Things, the circuit comprising a PMOS tube Q1, a PMOS tube Q2 and a boost chip U10, wherein:

[0006] The source of the PMOS tube Q1 is connected to VBAT, the drain of the PMOS tube Q1 is connected to the communication module, the drain of the PMOS tube Q1 and the communication module are also connected to the test point TP6 and VDD_GSM, the gate of the PMOS tube Q1 is connected to MCU2WAN_POWER, the gate of the PMOS tube Q1 is also connected to one end of the resistor R1, and the other end of the resistor R1 is grounded;

[0007] The source of the PMOS tube Q2 is connected to the communication module, a resistor R2 is arranged between the source and the gate of the PMOS tube Q2, one end of the resistor R2 is connected to the source of the PMOS tube Q2, and the other end of the resistor R2 is connected to the gate of the PMOS tube Q2, the drain of the PMOS tube Q2 is respectively connected to pin 7 and pin 8 of the boost chip U10, a capacitor C5 is arranged between the drain of the PMOS tube Q2 and the pin 7 of the boost chip U10, one end of the capacitor C5 is connected to the pin 7 of the boost chip U10, and the other end of the capacitor C5 is grounded, a capacitor C3 and a capacitor C4 are arranged between the drain of the PMOS tube Q2 and the pin 8 of the boost chip U10, the capacitor C3 and the capacitor C4 are connected in parallel, one end of the capacitor C3 and one end of the capacitor C4 are both connected to the pin 8 of the boost chip U10, and the other end of the capacitor C3 and the other end of the capacitor C4 are both grounded;

[0008] Pin 1 and pin 2 of the boost chip U10 are both grounded, pin 3 of the boost chip U10 is connected to MCU2WAN_POWER, a resistor R6 is arranged between pin 4 and pin 5 of the boost chip U10, one end of the resistor R6 is connected to pin 4 of the boost chip U10, the other end of the resistor R6 is connected to pin 5 of the boost chip U10, and the other end of the resistor R6 and pin 5 of the boost chip U10 are both grounded.

[0009] Furthermore, a resistor R5 is provided between pin 6 and pin 8 of the boost chip U10 , one end of the resistor R5 is connected to pin 6 of the boost chip U10 , and the other end of the resistor R5 is connected to pin 8 of the boost chip U10 .

[0010] Furthermore, one end of the resistor R5 and the pin 6 of the boost chip U10 are both connected to one end of the resistor R4, and the other end of the resistor R4 is grounded.

[0011] Furthermore, the pin 9 of the boost chip U10 is connected to one end of the inductor L1, the other end of the inductor L1 is connected to VBAT, the other end of the inductor L1 is also connected to one end of the capacitor C6, and the other end of the capacitor C6 is grounded.

[0012] Furthermore, capacitor C1 and capacitor C2 are arranged between the access point of the test point TP6 and the access point of VDD_GSM, the capacitor C1 is connected in parallel with the capacitor C2, one end of the capacitor C1 and one end of the capacitor C2 are both connected to the test point TP6 and VDD_GSM, and the other end of the capacitor C1 and the other end of the capacitor C2 are both grounded.

[0013] Furthermore, capacitor C7 and capacitor C8 are arranged between the access point of the test point TP6 and the access point of VDD_GSM, the capacitor C7 is connected in parallel with the capacitor C8, the positive electrode of the capacitor C7 and the positive electrode of the capacitor C8 are both connected to the test point TP6 and VDD_GSM, and the negative electrode of the capacitor C7 and the negative electrode of the capacitor C8 are both grounded.

[0014] Furthermore, the gate of the PMOS tube Q2 is connected to the collector of the transistor Q3, the base of the transistor Q3 is connected to one end of the resistor R3, the other end of the resistor R3 is connected to MCU2WAN_POWER, and the emitter of the transistor Q3 is grounded.

[0015] The present invention also provides a polymer lithium battery device for the Internet of Things, and the device includes the above-mentioned polymer lithium battery circuit for the Internet of Things.

[0016] The embodiment of the present invention uses a boost circuit when the voltage is lower than 3.4V, which not only makes efficient use of the battery capacity, but also optimizes the battery conversion efficiency and reduces energy loss during the conversion process; when the voltage is 3.6V, the voltage drop of the body effect diode inside the PMOS tube Q1 is greater than 0.6V, which can prevent the boost circuit from backflowing to the battery, reducing one anti-backflow MOS tube and reducing costs. The embodiment of the present invention can fully and efficiently utilize the capacity of lithium batteries while significantly reducing costs. It is very economical and applicable to portable and rechargeable devices used in the Internet of Things and scenarios with certain requirements for working time.

[0017] Other features and advantages of the present invention will be described in the following description, and partly become apparent from the description, or understood by practicing the present invention. The purpose and other advantages of the present invention can be realized and obtained by the structures pointed out in the description, claims and drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0019] Figure 1 A schematic diagram of a polymer lithium battery circuit for the Internet of Things according to an embodiment of the present invention is shown. DETAILED DESCRIPTION

[0020] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0021] The present invention provides a polymer lithium battery circuit for the Internet of Things, exemplarily, Figure 1 A schematic diagram of a polymer lithium battery circuit for the Internet of Things according to an embodiment of the present invention is shown. Figure 1 As shown, the circuit includes a PMOS tube Q1, a PMOS tube Q2 and a boost chip U10, wherein:

[0022] The source of the PMOS tube Q1 is connected to VBAT, the drain of the PMOS tube Q1 is connected to the communication module, the drain of the PMOS tube Q1 and the communication module are also connected to the test point TP6 and VDD_GSM, the gate of the PMOS tube Q1 is connected to MCU2WAN_POWER, the gate of the PMOS tube Q1 is also connected to one end of the resistor R1, and the other end of the resistor R1 is grounded. A capacitor C1 and a capacitor C2 are arranged between the access point of the test point TP6 and the access point of VDD_GSM, the capacitor C1 and the capacitor C2 are connected in parallel, one end of the capacitor C1 and one end of the capacitor C2 are both connected to the test point TP6 and VDD_GSM, and the other end of the capacitor C1 and the other end of the capacitor C2 are both grounded. Capacitor C7 and capacitor C8 are also arranged between the access point of the test point TP6 and the access point of VDD_GSM. The capacitor C7 is connected in parallel with the capacitor C8. The positive electrode of the capacitor C7 and the positive electrode of the capacitor C8 are both connected to the test point TP6 and VDD_GSM, and the negative electrode of the capacitor C7 and the negative electrode of the capacitor C8 are both grounded.

[0023] The source of the PMOS tube Q2 is connected to the communication module, a resistor R2 is arranged between the source and the gate of the PMOS tube Q2, one end of the resistor R2 is connected to the source of the PMOS tube Q2, and the other end of the resistor R2 is connected to the gate of the PMOS tube Q2, the drain of the PMOS tube Q2 is respectively connected to pin 7 and pin 8 of the boost chip U10, a capacitor C5 is arranged between the drain of the PMOS tube Q2 and the pin 7 of the boost chip U10, one end of the capacitor C5 is connected to pin 7 of the boost chip U10, and the other end of the capacitor C5 is grounded, a capacitor C3 and a capacitor C4 are arranged between the drain of the PMOS tube Q2 and the pin 8 of the boost chip U10, the capacitor C3 and the capacitor C4 are connected in parallel, one end of the capacitor C3 and one end of the capacitor C4 are both connected to pin 8 of the boost chip U10, and the other end of the capacitor C3 and the other end of the capacitor C4 are both grounded. The gate of the PMOS tube Q2 is connected to the collector of the transistor Q3, the base of the transistor Q3 is connected to one end of the resistor R3, the other end of the resistor R3 is connected to MCU2WAN_POWER, and the emitter of the transistor Q3 is grounded.

[0024] Pins 1 and 2 of the boost chip U10 are both grounded, pin 3 of the boost chip U10 is connected to MCU2WAN_POWER, a resistor R6 is provided between pins 4 and 5 of the boost chip U10, one end of the resistor R6 is connected to pin 4 of the boost chip U10, the other end of the resistor R6 is connected to pin 5 of the boost chip U10, and the other end of the resistor R6 and the pin 5 of the boost chip U10 are both grounded. A resistor R5 is provided between pins 6 and 8 of the boost chip U10, one end of the resistor R5 is connected to pin 6 of the boost chip U10, and the other end of the resistor R5 is connected to pin 8 of the boost chip U10. One end of the resistor R5 and pin 6 of the boost chip U10 are both connected to one end of the resistor R4, and the other end of the resistor R4 is grounded. Pin 9 of the boost chip U10 is connected to one end of the inductor L1 , the other end of the inductor L1 is connected to VBAT, the other end of the inductor L1 is also connected to one end of the capacitor C6 , and the other end of the capacitor C6 is grounded.

[0025] The present invention also provides a polymer lithium battery device for the Internet of Things, and the device includes the above-mentioned polymer lithium battery circuit for the Internet of Things.

[0026] The circuit of the embodiment of the present invention uses PMOS tube Q1, PMOS tube Q2, triode Q3 and boost chip U10, wherein the PMOS tube Q1 path is a path through which the battery can directly supply power when the battery voltage is higher than 3.4V, and can also be turned off. When the battery voltage is lower than 3.4V, the PMOS tube Q1 is turned off, and the boost chip U10 can turn on the triode Q3 and PMOS tube Q2, and the power supply circuit will be switched to the boost circuit part for power supply.

[0027] The embodiment of the present invention uses the boost circuit only when the voltage is lower than 3.4V, which not only makes efficient use of the battery capacity, but also optimizes the battery conversion efficiency and reduces the energy loss in the conversion process.

[0028] It should be noted that the boost circuit in the embodiment of the present invention should not be designed to boost the voltage too high, and it is recommended that the boost voltage be around 3.6 V. If the boost voltage is too high, it is necessary to add another MOS tube before the PMOS tube Q1 to prevent the boost circuit from charging the battery backwards; when it is set to 3.6 V, since the body effect diode voltage drop inside the PMOS tube Q1 is greater than 0.6 V, the boost circuit can be prevented from charging the battery backwards, and one anti-backflow MOS tube is reduced, thereby reducing costs.

[0029] Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent substitutions for some of the technical features therein; and these modifications or substitutions do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A polymer lithium battery circuit for the Internet of Things, characterized in that: The circuit includes a PMOS tube Q1, a PMOS tube Q2 and a boost chip U10, wherein: The source of the PMOS tube Q1 is connected to VBAT, the drain of the PMOS tube Q1 is connected to the communication module, the drain of the PMOS tube Q1 and the communication module are also connected to the test point TP6 and VDD_GSM, the gate of the PMOS tube Q1 is connected to MCU2WAN_POWER, the gate of the PMOS tube Q1 is also connected to one end of the resistor R1, and the other end of the resistor R1 is grounded; The source of the PMOS tube Q2 is connected to the communication module, a resistor R2 is arranged between the source and the gate of the PMOS tube Q2, one end of the resistor R2 is connected to the source of the PMOS tube Q2, and the other end of the resistor R2 is connected to the gate of the PMOS tube Q2, the drain of the PMOS tube Q2 is respectively connected to pin 7 and pin 8 of the boost chip U10, a capacitor C5 is arranged between the drain of the PMOS tube Q2 and the pin 7 of the boost chip U10, one end of the capacitor C5 is connected to the pin 7 of the boost chip U10, and the other end of the capacitor C5 is grounded, a capacitor C3 and a capacitor C4 are arranged between the drain of the PMOS tube Q2 and the pin 8 of the boost chip U10, the capacitor C3 and the capacitor C4 are connected in parallel, one end of the capacitor C3 and one end of the capacitor C4 are both connected to the pin 8 of the boost chip U10, and the other end of the capacitor C3 and the other end of the capacitor C4 are both grounded; Pin 1 and pin 2 of the boost chip U10 are both grounded, pin 3 of the boost chip U10 is connected to MCU2WAN_POWER, a resistor R6 is provided between pin 4 and pin 5 of the boost chip U10, one end of the resistor R6 is connected to pin 4 of the boost chip U10, the other end of the resistor R6 is connected to pin 5 of the boost chip U10, and the other end of the resistor R6 and pin 5 of the boost chip U10 are both grounded; A resistor R5 is provided between pin 6 and pin 8 of the boost chip U10, one end of the resistor R5 is connected to pin 6 of the boost chip U10, and the other end of the resistor R5 is connected to pin 8 of the boost chip U10; Pin 9 of the boost chip U10 is connected to one end of the inductor L1, the other end of the inductor L1 is connected to VBAT, the other end of the inductor L1 is also connected to one end of the capacitor C6, and the other end of the capacitor C6 is grounded; The gate of the PMOS tube Q2 is connected to the collector of the transistor Q3, the base of the transistor Q3 is connected to one end of the resistor R3, the other end of the resistor R3 is connected to MCU2WAN_POWER, and the emitter of the transistor Q3 is grounded.

2. The polymer lithium battery circuit for the Internet of Things according to claim 1, characterized in that: Capacitor C1 and capacitor C2 are arranged between the access point of the test point TP6 and the access point of VDD_GSM. The capacitor C1 is connected in parallel with the capacitor C2. One end of the capacitor C1 and one end of the capacitor C2 are both connected to the test point TP6 and VDD_GSM, and the other end of the capacitor C1 and the other end of the capacitor C2 are both grounded.

3. The polymer lithium battery circuit for the Internet of Things according to claim 2, characterized in that: Capacitor C7 and capacitor C8 are also arranged between the access point of the test point TP6 and the access point of VDD_GSM. The capacitor C7 is connected in parallel with the capacitor C8. The positive electrode of the capacitor C7 and the positive electrode of the capacitor C8 are both connected to the test point TP6 and VDD_GSM, and the negative electrode of the capacitor C7 and the negative electrode of the capacitor C8 are both grounded.

4. A polymer lithium battery device for the Internet of Things, characterized in that: The device comprises a polymer lithium battery circuit for the Internet of Things as described in any one of claims 1 to 3.

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