Insulator and ion source and ion implantation device composed of the same

Abstract

The present invention relates to an insulator and an ion source and an ion implantation device composed thereof. An insulator is characterized by comprising: a column body, the column body having two free ends: a first free end and a second free end; the column body has unequal diameters from the first free end to the second free end, and the diameter value at the center is the smallest. The insulator of the present invention has a larger specific surface area, can delay the contamination of ion beams, and has a longer service life.

Description

Technical Field

[0001] The invention relates to the field of semiconductor production equipment, and in particular to an insulator and an ion source and an ion implantation device composed of the insulator and the insulator. Background Art

[0002] In the semiconductor manufacturing process, it is usually necessary to implant ions into semiconductor wafers or other components to change the conductivity or crystal structure. The device used to implant ions is called an ion implantation device.

[0003] The process of generating plasma in an ion implantation device is as follows: an electric current is passed through the filament to heat it, thereby generating hot electrons, which are then used to heat the cathode. The hot electrons generated from the heated cathode are accelerated in the arc chamber, and collide with the source gas molecules in the arc chamber, ionizing the atoms contained in the source gas molecules, thereby generating plasma. In an ion implantation device, the filament, cathode, and reflector are generally fixed to the arc chamber by insulators. In the arc chamber, the insulators are inevitably contaminated by the ion beam. If the contamination is so severe that the insulation of the insulator is substantially destroyed, it will cause ion beam burrs, which is not conducive to ion implantation. Therefore, extending the service life of the insulator or preventing the insulator from being contaminated has become one of the key means to improve the efficiency and quality of ion implantation. Most existing insulators are cylindrical, such as Figure 1 As shown, its service life is short, which is not conducive to improving production efficiency.

[0004] For this reason, the present invention is specially proposed. Summary of the invention

[0005] The main purpose of the present invention is to provide an insulator, characterized in that the insulator has a larger specific surface area, can delay the contamination of ion beams, and has a longer service life.

[0006] Another object of the present invention is to provide an ion source and an ion implantation device composed of the above-mentioned insulators, in which the main function of the insulators is to fix or isolate cathodes, anodes, etc., and the connection method of the insulators with other structures depends on product requirements.

[0007] In order to achieve the above objectives, the present invention provides the following technical solutions.

[0008] An insulator, characterized by comprising:

[0009] A column body, the column body having two free ends: a first free end and a second free end;

[0010] The column body has different diameters from the first free end to the second free end, and the diameter at the center is the smallest.

[0011] Since the diameter varies and is smallest at the center, the specific surface area at the center of the insulator increases, which can delay the contamination of the ion beam and extend the service life.

[0012] The insulator can be used in an ion source and an ion implantation device to ensure a longer service life and can improve production efficiency compared with existing insulators.

[0013] Compared with the prior art, the present invention achieves the following technical effects:

[0014] (1) The specific surface area (area / volume) of the insulator is increased, the ion beam pollution resistance time is long, and the service life is long. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Various other advantages and benefits will become apparent to those of ordinary skill in the art by reading the following detailed description of the preferred embodiment.The drawings are only for the purpose of illustrating the preferred embodiments and are not to be construed as limiting the invention.

[0016] Figure 1 It is a structural schematic diagram of an insulator in the prior art;

[0017] Figure 2 A front view of an insulator provided by the present invention;

[0018] Figure 3 A front view of another insulator provided by the present invention. DETAILED DESCRIPTION

[0019] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. However, it should be understood that these descriptions are exemplary only and are not intended to limit the scope of the present disclosure. In addition, in the following description, descriptions of well-known structures and technologies are omitted to avoid unnecessary confusion of the concepts of the present disclosure.

[0020] Various structural schematic diagrams according to embodiments of the present disclosure are shown in the accompanying drawings. These figures are not drawn to scale, and some details are magnified and some details may be omitted for the purpose of clear expression. The shapes of various regions and layers shown in the figures and the relative sizes and positional relationships therebetween are only exemplary, and may deviate in practice due to manufacturing tolerances or technical limitations, and those skilled in the art may further design regions / layers with different shapes, sizes, and relative positions according to actual needs.

[0021] In the context of the present disclosure, when a layer / element is referred to as being "on" another layer / element, the layer / element may be directly on the other layer / element or an intervening layer / element may exist therebetween. In addition, if a layer / element is "on" another layer / element in one orientation, the layer / element may be "below" the other layer / element when the orientation is reversed.

[0022] Example 1

[0023] like Figure 2 The insulator shown includes a column body 201 and two free ends: a first free end 202 and a second free end 203; the diameter of the column body 201 gradually changes from the first free end 202 to the second free end 203, and the gradual trend is to gradually decrease to the center, where the diameter reaches the minimum, and then the diameter continues to increase.

[0024] Since the insulator has the smallest diameter at the center, its specific surface area is increased compared to existing straight cylindrical insulators, which can delay ion beam contamination and extend its service life.

[0025] The outer surface of the insulator of this embodiment has only one depression (or low-lying area). In fact, the diameter gradient of the column body can be diversified, such as gradually shrinking - gradually increasing - gradually shrinking - remain unchanged - gradually increasing - gradually shrinking - gradually increasing, or gradually shrinking - gradually increasing - gradually shrinking - gradually increasing - gradually shrinking - remain unchanged - gradually increasing - gradually shrinking - gradually increasing - gradually shrinking - gradually increasing, or other methods, usually a reciprocating change of gradually shrinking and increasing. In order to increase the specific surface area of ​​the insulator at the center, the diameter of the column body at the center can remain unchanged for a certain length, and the diameter at this point is the minimum value relative to other areas. And the larger the width of the depression in the central area, the larger the specific surface area and the longer the service life.

[0026] In addition, in order to ensure that the insulator does not affect ion emission when changing its position in the up and down directions, its structure is preferably symmetrical, that is, the diameter of the column body is distributed symmetrically with the center between the first free end and the second free end as the center.

[0027] Example 2

[0028] like Figure 3The insulator shown includes a column body 201, and the column body 201 has two free ends: a first free end 202 and a second free end 203; the diameter of the column body 201 is gradually changed from the first free end 202 to the second free end 203, and the diameter at the center reaches the minimum. The diameter of the column body 201 is centrally symmetrically distributed with the center between the first free end 202 and the second free end 203 as the center. The diameter of the column body 201 is gradually changed in a wave-like manner from the first free end 202 to the second free end 203 (i.e., the outer wave line of the outer contour of the column body), and there are at least three waves, and the wave width at the center between the first free end 202 and the second free end 203 is more than twice the width of the remaining waves.

[0029] Compared with Example 1, this embodiment has a larger specific surface area and a longer service life.

[0030] Among them, the diameter changes in a wavy line, and its specific function curve can be a parabola, a sine curve or a cosine curve, etc. The functions of different bands can be the same or different. The figure shows a sine curve, and from left to right, the first wave and the third wave have the same function, referred to as a (as shown in the dotted circle in the figure); and in order to make the center of the column body have a larger specific surface area, the center between the first free end and the second free end is used as the boundary, and the left and right sides of the column body are mirror-symmetrical, and the sine curve at the center has a longer period (that is, the wave width is larger), and the wave width is at least twice that of other waves, referred to as b (as shown in the dotted circle in the figure), that is, the insulator is composed of three sections a, b, and a spliced ​​in sequence. When the width of A is 3 to 10 mm, the width of b is 6 to 20 mm.

[0031] The present invention also includes an insulator composed of a, b, a, b, a, b, a, or a, a, b, a, a, or a, a, a, b, a, a, a, etc. Among them, it is preferred that the diameter of the column body has at least three depressions.

[0032] All the above-mentioned embodiments of the present invention can be used to form an ion source and an ion implantation device, in which the main function of the insulator is to fix or isolate the cathode, anode, etc. The connection method of the insulator and other structures depends on the product requirements.

[0033] The embodiments of the present disclosure are described above. However, these embodiments are for illustrative purposes only and are not intended to limit the scope of the present disclosure. The scope of the present disclosure is defined by the appended claims and their equivalents. Without departing from the scope of the present disclosure, a person skilled in the art may make a variety of substitutions and modifications, which should all fall within the scope of the present disclosure.

Claims

1. An insulator, characterized in that: include: A column body, the column body having two free ends: a first free end and a second free end; The diameter of the column body changes gradually from the first free end to the second free end, and the diameter value at the center is the smallest; The midpoint between the first free end and the second free end is the center, and the diameter values ​​of the column body are symmetrically distributed relative to the center; The diameter of the column body changes gradually in a wave-like manner from the first free end to the second free end, and has multiple waves. The width of the wave at the center between the first free end and the second free end is more than twice the width of the remaining waves.

2. The insulator according to claim 1, characterized in that: With the center between the first free end and the second free end as the boundary, the diameters of the left and right sides of the column body change in a sinusoidal curve.

3. The insulator according to claim 2, characterized in that: With the center between the first free end and the second free end as the boundary, the left and right sides of the column body are mirror-symmetrical.

4. The insulator according to any one of claims 1 to 3, characterized in that: The diameter of the column body has at least three depressions.

5. An ion source, characterized in that: The insulator comprises the insulator described in any one of claims 1 to 4.

6. An ion implantation device, characterized in that: Comprising the ion source as claimed in claim 5.

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