A type with Sp 2 Semiconductor light emitting device with carbon-containing p-type contact layer

Abstract

The present invention relates to the technical field of semiconductor optoelectronic devices, and in particular to a semiconductor optoelectronic device having Sp 2 The semiconductor light emitting element with a carbon-containing p-type contact layer comprises, from bottom to top, a substrate, an n-type semiconductor, a multi-quantum well, a p-type semiconductor and a p-type contact layer, wherein the p-type contact layer has a Sp 2 The carbon content is more than 30%, forming Sp 2 Carbon content p-type contact layer; by the p-type contact layer Sp 2 Carbon content increased to more than 30%, Sp 2 Carbon can form an intermediate potential barrier between the p-type contact layer and the electrode material, causing the potential barrier to drop by more than 0.6 eV, thereby reducing the contact resistance and thereby reducing the voltage of the semiconductor light-emitting element by more than 0.05 V.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor optoelectronic devices, and in particular to a semiconductor optoelectronic device having Sp 2 A semiconductor light emitting element having a carbon-containing p-type contact layer. Background Art

[0002] Semiconductor components, especially semiconductor light-emitting components, have a wide range of adjustable wavelengths, high luminous efficiency, energy saving and environmental protection, long service life of more than 100,000 hours, small size, multiple application scenarios, strong designability, etc., and have gradually replaced incandescent lamps and fluorescent lamps, and have become the light source for ordinary household lighting. They are also widely used in new scenarios, such as indoor high-resolution display screens, outdoor display screens, mobile TV backlighting, street lights, car lights, flashlights and other application fields. The low Mg solubility, high Mg ionization energy and low ionization efficiency of the p-type contact layer of traditional nitride semiconductors have led to a free hole concentration generally lower than 5E17cm -3 ; In particular, the ionization energy of Mg gradually increases with the increase of Al content, resulting in a further decrease in hole density. The carbon element of the traditional p-type contact layer is generally carbon Sp 3 Hybridization is dominant, forming a higher potential barrier and contact resistance, resulting in high voltage of semiconductor light-emitting elements, especially deep ultraviolet semiconductor light-emitting elements with high Al components. Summary of the invention

[0003] In order to solve the above technical problems, the present invention provides a method having Sp 2 The semiconductor light emitting element with a p-type contact layer having a carbon content is formed by 2 Carbon content increased to more than 30%, Sp 2 Carbon can form an intermediate potential barrier between the p-type contact layer and the electrode material, causing the potential barrier to drop by more than 0.6 eV, thereby reducing the contact resistance and thereby reducing the voltage of the semiconductor light-emitting element by more than 0.05 V.

[0004] To achieve the above object, the present invention is implemented by adopting the following technical solutions:

[0005] A type with Sp 2 The semiconductor light emitting element with a carbon-containing p-type contact layer comprises, from bottom to top, a substrate, an n-type semiconductor, a multi-quantum well, a p-type semiconductor and a p-type contact layer, wherein the p-type contact layer has a Sp 2 The carbon content is more than 30%, forming Sp 2 Carbon content p-type contact layer.

[0006] In the above technical solution, the carbon of the p-type contact layer is calibrated by XPS test to have Sp 2 Carbon and Sp 3 Carbon, Sp 2 The carbon content ratio is defined as Sp2 XPS spectrum intensity / (Sp 2 XPS spectrum intensity +Sp 3 XPS spectrum intensity), the p-type contact layer Sp 2 The carbon content is over 30%.

[0007] In the above technical solution, the thickness of the p-type contact layer is 0.2nm to 500nm.

[0008] In the above technical solution, the doping material of the p-type contact layer is Mg, and the doping concentration of Mg is 1E19-1E22 atoms / cm as measured by SIMS secondary ion mass spectrometry. 3 .

[0009] In the above technical solution, by 2 Carbon content increased to more than 30%, Sp 2 Carbon forms an intermediate potential barrier between the p-type contact layer and the electrode material, causing the potential barrier to drop by more than 0.6 eV, thereby reducing the contact resistance and thereby reducing the voltage of the semiconductor light-emitting element by more than 0.05 V.

[0010] In the above technical scheme, the n-type semiconductor, multiple quantum well, p-type semiconductor, and p-type contact layer include any one or any multiple combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga2O3, BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, and InGaP.

[0011] In the above technical scheme, the substrate includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0012] In the above technical solution, the semiconductor light emitting element includes a semiconductor light emitting diode, a semiconductor laser diode, a semiconductor laser, and a semiconductor laser element. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 This is an embodiment of the present invention having Sp 2 A schematic diagram of the structure of a semiconductor light emitting element having a carbon-containing p-type contact layer;

[0014] Figure 2 This is an embodiment of the present invention having Sp2 SIMS secondary ion mass spectrum of a semiconductor light emitting element (laser) with a carbon content p-type contact layer;

[0015] Figure 3 This is an embodiment of the present invention having Sp 2 SIMS secondary ion mass spectrum of a semiconductor light emitting device (light emitting diode) with a carbon content p-type contact layer;

[0016] Reference numerals: 100: substrate; 101: n-type semiconductor, 102: multiple quantum well, 103: p-type semiconductor, 104: p-type contact layer. DETAILED DESCRIPTION

[0017] The specific implementation of the present invention is further described in detail below in conjunction with the accompanying drawings and examples. The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention.

[0018] like Figure 1 As shown, a method of the present invention having Sp 2 A semiconductor light-emitting element with a carbon-containing p-type contact layer comprises, from bottom to top, a substrate 100, an n-type semiconductor 101, a multi-quantum well 102, a p-type semiconductor 103 and a p-type contact layer 104, wherein the substrate 100 is a substrate on which nitride semiconductor crystals can be epitaxially grown, and a substrate having a high transmittance (for example, the transmittance of the light is above 50%) for the wavelength range of light emitted by the semiconductor light-emitting element can be selected; the n-type semiconductor 101, the multi-quantum well 102, the p-type semiconductor 103 and the p-type contact layer 104 are sequentially stacked on the substrate 100, and the stacked semiconductor layers are stacked by methods such as organic metal chemical vapor deposition (MOCVD), organic metal vapor phase epitaxy (MOVPE), molecular beam epitaxy (MBE) and hydride vapor phase epitaxy (HVPE); the multi-quantum well 102 is composed of a stacked structure formed by alternating well layers and barrier layers; the p-type contact layer Sp 2 Carbon content is more than 30% (Sp 2 / (Sp 2 +Sp 3 )), forming a 2 Carbon content p-type contact layer; where Sp 2 The carbon content ratio is defined as Sp 2 XPS spectrum intensity / (Sp 2 XPS spectrum intensity +Sp 3 XPS spectrum intensity), preferably, the carbon of the p-type contact layer is calibrated by XPS (X-ray photoelectron spectroscopy) test to have Sp 2 Carbon and Sp 3 Carbon, the p-type contact layer Sp 2The carbon content is over 30%.

[0019] The low Mg solubility, high Mg ionization energy, and low ionization efficiency of the p-type contact layer of traditional nitride semiconductors result in a free hole concentration generally lower than 5E17cm -3 ; In particular, the ionization energy of Mg gradually increases with the increase of Al content, resulting in a further decrease in hole density. The carbon element of the traditional p-type contact layer is generally carbon Sp 3 Hybridization is the main method, forming a higher potential barrier and contact resistance, resulting in a high voltage of the semiconductor light-emitting element, especially a deep ultraviolet semiconductor light-emitting element with a high Al component; the present invention sets a p-type contact layer for directly injecting current into the p-type region, by 2 Carbon content increased to more than 30%, Sp 2 Carbon can form an intermediate potential barrier between the p-type contact layer and the electrode material, causing the potential barrier to drop by more than 0.6eV, reducing the contact resistance, thereby reducing the voltage of the semiconductor light-emitting element by more than 0.05V; specifically, the p-type contact layer can be made using MOCVD metal organic chemical vapor deposition equipment, with a growth temperature of 700-1100 degrees Celsius, a pressure of 100-500Torr, and a rotation speed of 500-1200 rpm. TEGa or TMGa, N2, H2, and NH3 are introduced, and the temperature, pressure, MO source, and the ratio and combination of N2 / H2 / NH3 are adjusted to achieve Sp of the p-type contact layer. 2 The carbon content is more than 30%; preferably, the growth temperature is 870 degrees Celsius, the pressure is 200Torr, the rotation speed is 1200 rpm, the TEGa source is used, and the growth condition combination of N2:H2:NH3 ratio is 1.28:2.4:1 to achieve the Sp of the p-type contact layer 2 The carbon content is over 30%.

[0020] As a preferred technical solution of the present invention, the thickness of the p-type contact layer is 0.2nm to 500nm, preferably 2nm. The ultra-thin p-type contact layer can reduce the contact resistance and the voltage of the device.

[0021] As a preferred technical solution of the present invention, the doping material of the p-type contact layer is Mg, and the doping concentration of Mg is 1E19-1E22 atoms / cm as measured by SIMS secondary ion mass spectrometry. 3 , high concentration of Mg element doping can increase the number and concentration of ionized holes, and reduce the contact resistance and voltage of the device.

[0022] The n-type semiconductor, multiple quantum well, p-type semiconductor, and p-type contact layer include any one or any multiple combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga2O3, BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, and InGaP.

[0023] The substrate includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0024] The semiconductor light emitting element of the present invention includes a semiconductor light emitting diode, a semiconductor laser diode, a semiconductor laser, a semiconductor laser element, such as Figure 2 As shown in FIG. 1 , it is a SIMS secondary ion mass spectrum of the present invention applied to a semiconductor laser. It can be seen from the figure that the p-type contact layer is a GaN layer with a high Mg doping concentration. The Mg doping concentration is 1E19 to 1E22 atoms / cm as measured by SIMS secondary ion mass spectrometry. 3 ;Sp 2 Carbon can form an intermediate potential barrier between the p-type contact layer and the electrode material, causing the potential barrier to drop by more than 0.6eV, reducing the contact resistance and thus causing the voltage of the semiconductor light-emitting element to drop by more than 0.05V; Figure 3 As shown in FIG. 1 , it is a SIMS secondary ion mass spectrometer of the present invention applied to a semiconductor light emitting diode. It can be seen from the figure that the p-type contact layer is a GaN layer with a high Mg doping concentration. The Mg doping concentration is 1E19 to 1E22 atoms / cm 3 as tested by SIMS secondary ion mass spectrometry. 3 ;Sp 2 Carbon can form an intermediate potential barrier between the p-type contact layer and the electrode material, causing the potential barrier to drop by more than 0.6 eV, thereby reducing the contact resistance and thereby reducing the voltage of the semiconductor light-emitting element by more than 0.05 V.

[0025] The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the technical principles of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.

Claims

1. A type with Sp 2 The semiconductor light emitting element with a carbon-containing p-type contact layer comprises, from bottom to top, a substrate, an n-type semiconductor, a multi-quantum well, a p-type semiconductor and a p-type contact layer, characterized in that: The p-type contact layer Sp 2 The carbon content is more than 30%, forming Sp 2 Carbon content p-type contact layer.

2. A method as claimed in claim 1 having Sp 2 A semiconductor light emitting element having a carbon-containing p-type contact layer, characterized in that: The carbon of the p-type contact layer is calibrated by XPS test to have Sp 2 Carbon and Sp 3 Carbon, the p-type contact layer Sp 2 The carbon content is over 30%.

3. A method as claimed in claim 1 having Sp 2 A semiconductor light emitting element having a carbon-containing p-type contact layer, characterized in that: The thickness of the p-type contact layer is 0.2nm-500nm.

4. A method as claimed in claim 1 having Sp 2 A semiconductor light emitting element having a carbon-containing p-type contact layer, characterized in that: The doping material of the p-type contact layer is Mg, and the doping concentration of Mg is 1E19-1E22 atoms / cm as measured by SIMS secondary ion mass spectrometry. 3 .

5. A method as claimed in claim 1 having Sp 2 A semiconductor light emitting element having a carbon-containing p-type contact layer, characterized in that: By making the p-type contact layer Sp 2 Carbon content increased to more than 30%, Sp 2 Carbon forms an intermediate potential barrier between the p-type contact layer and the electrode material, causing the potential barrier to drop by more than 0.6 eV, thereby reducing the contact resistance and thereby reducing the voltage of the semiconductor light-emitting element by more than 0.05 V.

6. A method as claimed in claim 1 having Sp 2 A semiconductor light emitting element having a carbon-containing p-type contact layer, characterized in that: The n-type semiconductor, multiple quantum well, p-type semiconductor, and p-type contact layer include any one or any multiple combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga2O3, BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, and InGaP.

7. A method as claimed in claim 1 having Sp 2 A semiconductor light emitting element having a carbon-containing p-type contact layer, characterized in that: The substrate includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

8. A method as claimed in claim 1 having Sp 2 A semiconductor light emitting element having a carbon-containing p-type contact layer, characterized in that: The semiconductor light emitting element includes a semiconductor light emitting diode and a semiconductor laser diode.

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