MOS tube heat sink

Abstract

The present invention provides a MOS tube heat dissipation device, which includes a heat sink and a heat dissipation fan; the MOS tube heat dissipation device also includes: a metal plate for carrying the MOS tube and fixed on the heat sink; a shielding shell is arranged on the metal plate, and the MOS tube is in a space surrounded by the shielding shell and the metal plate; a heat conductive material is filled between the metal plate and the heat sink. The present invention has the advantages of good heat dissipation effect and the like.

Description

Technical Field

[0001] The invention relates to heat dissipation, and in particular to a heat dissipation device for a MOS tube. Background Art

[0002] MOS tube is a semiconductor field effect tube, which is often used in switching power supplies, inverters, audio products and other products. The heat generated by high-power MOS tubes is very large, and the heat power can reach more than 100W. If the heat is not dissipated, the performance of the MOS tube will deteriorate due to the increase in temperature, and the power will also increase accordingly, resulting in a vicious cycle, and the MOS tube will soon burn out. The MOS tube heat sinks commonly used on the market are generally made of metal materials such as aluminum or copper. Contact with the MOS tube will cause the circuit to be turned on, making the heat sink charged, and also generate a large amount of electromagnetic radiation. The heat sink of the present invention can meet the heat dissipation of MOS tubes with a power level of 100W, while ensuring that the heat sink will not be charged and shielding the electromagnetic radiation generated by the MOS tube. Summary of the invention

[0003] In order to solve the deficiencies in the above-mentioned prior art solutions, the present invention provides a MOS tube heat dissipation device.

[0004] The objective of the present invention is achieved through the following technical solutions:

[0005] A MOS tube heat dissipation device, the MOS tube heat dissipation device comprising a radiator and a heat dissipation fan; the MOS tube heat dissipation device further comprises:

[0006] A metal plate, which is used to carry the MOS tube and is fixed on the heat sink;

[0007] A shielding shell, wherein the shielding shell is arranged on the metal plate, and the MOS tube is located in a space enclosed by the shielding shell and the metal plate;

[0008] A heat conductive material is filled between the metal plate and the heat sink.

[0009] Compared with the prior art, the present invention has the following beneficial effects:

[0010] The present invention welds the MOS tube to a metal plate such as a copper plate, so that the heat generated by the MOS tube is evenly distributed to the copper plate;

[0011] In the present invention, insulating graphene is attached to the heat sink, so that the heat of the metal plate can be further balanced on the graphene, while ensuring that the MOS tube and the heat sink will not be in contact and conduct;

[0012] The present invention uses a rubber pad to press the metal plate, and the extrusion surface is large, so that the metal plate and the graphene can be evenly contacted without movement;

[0013] The present invention uses a shielding shell to shield the electromagnetic radiation of the metal plate and the MOS tube, and at the same time presses the rubber pad to fix the metal plate;

[0014] The present invention can meet the heat dissipation requirements of MOS tubes with a power level of 100W. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] The disclosure of the present invention will become easier to understand with reference to the accompanying drawings. It is easy for those skilled in the art to understand that these drawings are only used to illustrate the technical solution of the present invention and are not intended to limit the scope of protection of the present invention. In the drawings:

[0016] Figure 1 is a schematic structural diagram of a MOS tube heat dissipation device according to an embodiment of the present invention;

[0017] Figure 2 2 is another structural schematic diagram of the MOS tube heat dissipation device according to an embodiment of the present invention. DETAILED DESCRIPTION

[0018] Figure 1-2 The following description describes the optional embodiments of the present invention to teach those skilled in the art how to implement and reproduce the present invention. In order to explain the technical solution of the present invention, some conventional aspects have been simplified or omitted. It should be understood by those skilled in the art that variations or replacements derived from these embodiments will be within the scope of the present invention. It should be understood by those skilled in the art that the following features can be combined in various ways to form multiple variations of the present invention. Thus, the present invention is not limited to the following optional embodiments, but is only limited by the claims and their equivalents.

[0019] Embodiment 1:

[0020] Figure 1-2 The structure diagram of the MOS tube heat dissipation device of Embodiment 1 of the present invention is schematically shown. Figure 1-2 As shown, the MOS tube heat dissipation device includes:

[0021] Radiator 2 and cooling fan 4;

[0022] A metal plate 8, the metal plate 8 is used to carry the MOS tube and is fixed on the heat sink 2;

[0023] A shielding shell 6, wherein the shielding shell 6 is disposed on the metal plate 8, and the MOS tube is located in a space enclosed by the shielding shell 6 and the metal plate 8;

[0024] A heat conductive material is filled between the metal plate and the heat sink.

[0025] In order to shield electromagnetic radiation, the MOS heat dissipation device further includes:

[0026] The radiation shielding component 9 is arranged in the space, outside the MOS tube, and is squeezed by the shielding shell.

[0027] In order to improve the heat transfer effect, the MOS heat dissipation device further includes:

[0028] The graphene layer 5 is disposed on the heat sink 3 and between the metal plate 8 and the heat sink 3 .

[0029] In order to improve the heat conduction effect, the MOS tube and the metal plate 8 are further fixed in the following manner:

[0030] Apply solder paste on the MOS tube and the metal plate 8 respectively, and fasten them with a clamp;

[0031] The MOS tube and the metal plate 8 fastened together are placed in a constant temperature box for heating.

[0032] In order to accurately obtain the core temperature of the MOS tube, further, the core temperature of the MOS tube T=C(R1+R2+R3+R4)P+T0, P is the MOS tube power, C is the total heat dissipation coefficient, T0 is the ambient temperature, and R1 is the thermal resistance from the chip to the shell inside the MOS tube; R sink is the solid heat transfer resistance of the radiator; k1, k2, k3 are the thermal conductivities of the MOS tube, metal plate, and graphene layer respectively; A1, A2, A3, A4 are the plane areas of the MOS tube, metal plate, graphene layer, and radiator respectively; δ2, δ3 are the thicknesses of the metal plate and graphene layer respectively; L1, L2, L3 are the side lengths of the MOS tube, metal plate, and graphene layer respectively; h2, h3, h4 are the convective heat transfer coefficients of the metal plate, graphene layer, and radiator respectively.

[0033] Embodiment 2:

[0034] An application example of the MOS tube heat dissipation device according to embodiment 1 of the present invention.

[0035] In this application example, as shown in 1-2, the metal plate 8 is a thin copper plate, that is, a copper sheet, which is fixed to the central area of ​​the plane of the aluminum profile radiator 2, and the area of ​​the metal plate 8 is smaller than the plane area of ​​the radiator 2; the MOS tube and the metal plate 8 are fixed in the following manner: solder paste is applied to the MOS tube and the metal plate 8 respectively, and they are fastened with a clamp; the MOS tube and the metal plate 8 fastened together are placed in a constant temperature box and heated to 300 degrees for half an hour; the radiation shielding component 9 is made of rubber material and is located in three directions of the MOS tube; one side of the aluminum shielding shell 6 has a threading hole 7, which is suitable for the wire of the MOS to pass through; the graphene layer 5 is entirely laid on the plane of the radiator 2; the shielding shell 6 is fixed to the radiator 2 with screws 1, and the cooling fan 4 is fixed to the radiator 2 with screws 3;

[0036] In this embodiment, the side length L1 of the MOS tube is 8 mm, the heating power P of the MOS tube is 100 W, the side length L2 of the copper sheet is 50 mm, the thickness δ2 is 1 mm, and the thermal conductivity k2 is 200 W / (m·K); the side length L3 of the graphene layer is 100 mm, the thickness δ3 is 0.1 mm, and the thermal conductivity k3 is 1500 W / (m·K); the thermal resistance R of the heat sink is sink =2.5K / W, radiator bottom area A4 = 0.01mm 2 The fan adopts 80*20mm specification, the air volume is about 29CFM, h4=75W / (m·K); the ambient temperature T0 is 20℃, and the calculated MOS tube core temperature T=C(R1+R2+R3+R4)P+T0 is about 66.5℃, which is almost consistent with the measured results.

Claims

1. A MOS tube heat dissipation device, comprising a radiator and a cooling fan; characterized in that: The MOS tube heat dissipation device also includes: A metal plate, which is used to carry the MOS tube and is fixed on the heat sink; A shielding shell, wherein the shielding shell is arranged on the metal plate, and the MOS tube is located in a space enclosed by the shielding shell and the metal plate; A heat-conducting material, wherein the heat-conducting material is filled between the metal plate and the heat sink; A graphene layer, wherein the graphene layer is disposed on the heat sink and between the metal plate and the heat sink; The core temperature of the MOS tube is T=C·(R1+R2+R3+R4)·P+T0, where P is the power of the MOS tube, C is the total heat dissipation coefficient, T0 is the ambient temperature, and R1 is the thermal resistance from the chip to the shell inside the MOS tube; , ; , , , R sink is the solid heat transfer resistance of the radiator; k1, k2, k3 are the thermal conductivities of the MOS tube, metal plate, and graphene layer respectively; A1, A2, A3, A4 are the plane areas of the MOS tube, metal plate, graphene layer, and radiator respectively; δ2, δ3 are the thicknesses of the metal plate and graphene layer respectively; L1, L2, L3 are the side lengths of the MOS tube, metal plate, and graphene layer respectively; h2, h3, h4 are the convective heat transfer coefficients of the metal plate, graphene layer, and radiator respectively.

2. The MOS tube heat dissipation device according to claim 1, characterized in that: The MOS tube heat dissipation device also includes: A radiation shielding component is arranged in the space, outside the MOS tube, and is squeezed by the shielding shell.

3. The MOS tube heat dissipation device according to claim 2, characterized in that: The radiation shielding component is made of rubber.

4. The MOS tube heat dissipation device according to claim 1, characterized in that: The fixing method between the MOS tube and the metal plate is: Apply solder paste on the MOS tube and the metal plate respectively, and fasten them with a clamp; The MOS tube and the metal plate fastened together are placed in a constant temperature box for heating.

5. The MOS tube heat dissipation device according to claim 1, characterized in that: The metal plate is a copper plate.

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