Method for detecting a substrate and detection device therefor

Abstract

This invention provides a method and apparatus for detecting a substrate. The apparatus includes a base plate, a ranging unit, and a processing unit, and the base plate has an attraction mechanism. The apparatus has both an attraction detection state and a direct detection state. In the attraction detection state, the attraction mechanism is activated to attract the substrate placed on the base plate, and the processing unit calculates the attraction thickness of the substrate. In the direct detection state, the attraction mechanism is deactivated to stop attracting the substrate placed on the base plate, and the processing unit calculates the direct thickness of the substrate. Finally, the processing unit calculates a warpage value of the substrate based on the direct thickness and the attraction thickness. This warpage value represents the degree of warpage of the substrate. Therefore, the detection apparatus and method of this invention eliminate the influence of substrate thickness differences on warpage detection, exhibiting wide applicability and high accuracy.

Description

Technical Field

[0001] This invention relates to a testing device, and more particularly to a method for testing a substrate and a testing device thereof. Background Technology

[0002] Alumina ceramic substrates, due to their excellent thermal conductivity, high mechanical strength, superior insulation properties, and high cost-effectiveness, have become the most widely used inorganic non-metallic substrate material in the semiconductor and electronics industries. They are particularly promising as insulating and heat-dissipating substrates in high-power, high-brightness light-emitting diodes (LEDs) and insulated-gate bipolar transistors (IGBTs). With the development of LED and IGBT packaging technology, the demand for large-size, high-flatness, and high-surface-quality ceramic substrates that can improve circuit printing efficiency and heat dissipation is increasing. Currently, the main molding processes for industrial-scale mass production of alumina ceramic substrates include tape casting, powder molding, and gel casting.

[0003] When manufacturing multilayer ceramic substrates using the process described above, high dimensional accuracy can be achieved in the main surface direction. However, due to factors such as the distribution of conductor portions (e.g., conductive films or via conductors) in the green ceramic laminate that will become the multilayer ceramic substrate, as well as the thickness and composition of the green ceramic layers, warping can sometimes occur during the firing process. In particular, the surface conductive film located on the main surface of the green ceramic laminate can significantly influence warping.

[0004] Chinese Patent No. CN104475353 discloses a board warpage detection machine, including a frame, a first feeding device, a control device, a detection device, a sorting device, a second feeding device, and a receiving device. The first feeding device, control device, detection device, sorting device, second feeding device, and receiving device are fixedly connected to the frame. The detection device is located above the first feeding device, the sorting device is located between the first and second feeding devices, and the receiving device is located at the tail end of the frame. The first feeding device, detection device, sorting device, second feeding device, and receiving device are electrically connected to the control device. This board warpage detection machine can detect the warpage of copper-clad laminates and circuit boards, and automatically separate qualified products with warpage less than or equal to a set standard value from unqualified products with warpage greater than the set standard value.

[0005] However, the drawback of the aforementioned board warpage testing machine is that when there is a thickness difference in the ceramic substrate, the machine cannot determine whether there is a thickness difference in the ceramic substrate or eliminate the influence of the thickness difference on the warpage measurement. Therefore, it cannot accurately measure whether the board has warpage.

[0006] Therefore, after observing the above-mentioned deficiencies, the inventor of this case came into having this invention. Summary of the Invention

[0007] The purpose of this invention is to provide a method for detecting a substrate. This method involves activating a suction mechanism to attract a substrate placed on a base plate, and activating a ranging unit to generate a ranging signal that is transmitted to a processing unit. The processing unit calculates the attracted thickness of the substrate. Then, the suction mechanism is deactivated to stop attracting the substrate placed on the base plate, and the ranging unit is activated again to generate a ranging signal that is transmitted to the processing unit. The processing unit calculates the direct thickness of the substrate. Finally, the processing unit calculates the warpage value of the substrate based on the direct thickness and the attracted thickness. This warpage value represents the degree of warpage of the substrate. This method successfully eliminates the influence of substrate thickness differences on warpage detection, and only requires a single subtraction operation by the processing unit. It is highly suitable for mass production testing, offering wide applicability and high accuracy.

[0008] To achieve the above objectives, the present invention provides a method for detecting a substrate, applicable to an environment where a substrate is detected using a detection device. The detection device includes a base plate, a ranging unit, and a processing unit. The base plate has a suction mechanism and a suction surface, and the base plate is coupled to the ranging unit. The processing unit is coupled to the ranging unit. The detection method includes the following steps: a preparation step, placing the substrate on the suction surface of the base plate; a suction step, activating the suction mechanism to attract the substrate placed on the base plate; a suction ranging step, activating the ranging unit to sense the distance between the ranging unit and the substrate, the ranging unit generating at least one suction ranging signal which is transmitted to the processing unit; and a suction thickness calculation step. The processing unit calculates an attraction thickness of the substrate based on the attraction ranging signal; a attraction shutdown step, wherein the attraction mechanism is shut down to stop attracting the substrate placed on the base plate; and a warpage value calculation step, wherein the processing unit calculates a warpage value of the substrate based on a direct thickness and the attraction thickness, the warpage value being used to represent the degree of warpage of the substrate; wherein, before the attraction step or after the attraction shutdown step, the detection method further includes: a direct ranging step, wherein the ranging unit is activated to sense the distance between the ranging unit and the substrate, the ranging unit generating at least one direct ranging signal and transmitting it to the processing unit; and a direct thickness calculation step, wherein the processing unit calculates the direct thickness of the substrate based on the direct ranging signal.

[0009] Preferably, according to the detection method of the present invention, the substrate has a preset thickness, and the detection method further includes: a thickness difference calculation step, wherein the processing unit performs a subtraction operation between the attractive thickness and the preset thickness to generate a thickness difference value.

[0010] Preferably, according to the detection method of the present invention, the ranging unit includes at least one light emitter and at least one light sensor, and the attraction ranging step includes the following steps: an attraction emission step, wherein the light emitter of the ranging unit emits a light beam toward the substrate and generates an attraction emission signal to the processing unit; an attraction sensing step, wherein the light sensor of the ranging unit senses the light beam reflected by the substrate and generates an attraction sensing signal to the processing unit; wherein, in the attraction thickness calculation step, the processing unit calculates the attraction thickness of the substrate based on the time when the attraction emission signal is generated and the time when the attraction sensing signal is generated.

[0011] Preferably, according to the detection method of the present invention, the direct ranging step includes the following steps: a direct emission step, wherein the light emitter of the ranging unit emits the light beam toward the substrate and generates a direct emission signal to the processing unit; a direct sensing step, wherein the light sensor of the ranging unit receives the light beam reflected by the substrate and generates a direct sensing signal to the processing unit; wherein, in the direct thickness calculation step, the processing unit calculates the direct thickness of the substrate based on the time of generation of the direct emission signal and the time of generation of the direct sensing signal.

[0012] Furthermore, to achieve the above objectives, the present invention, based on the aforementioned substrate detection method, further provides a substrate detection apparatus for performing the aforementioned method, comprising: a base plate having an attraction surface and an attraction mechanism, wherein the substrate is placed on the attraction surface and the attraction mechanism is used to attract the substrate; a ranging unit coupled to the base plate, the ranging unit being used to sense the distance between the ranging unit and the substrate; and a processing unit coupled to the ranging unit; wherein the detection apparatus has an attraction detection state and a direct detection state, the attraction detection state being when the attraction mechanism is activated and attracts the substrate placed on the base plate, and the ranging unit is activated to sense the distance between the substrate and the substrate. The distance between the ranging unit and the substrate is measured. The ranging unit generates at least one attraction ranging signal and transmits it to the processing unit. The processing unit calculates an attraction thickness of the substrate based on the attraction ranging signal. The direct detection state is that the attraction mechanism is closed to stop attracting the substrate placed on the base plate. The ranging unit is activated to sense the distance between the ranging unit and the substrate. The ranging unit generates at least one direct ranging signal and transmits it to the processing unit. The processing unit calculates the direct thickness of the substrate based on the direct ranging signal. The processing unit calculates a warpage value of the substrate based on the direct thickness and the attraction thickness. The warpage value is used to represent the degree of warpage of the substrate.

[0013] Preferably, in the detection device according to the present invention, the substrate has a preset thickness, and the processing unit performs a subtraction operation between the attraction thickness and the preset thickness to generate a thickness difference value.

[0014] Preferably, in the detection device according to the present invention, the ranging unit includes at least one light emitter and at least one light sensor. When the detection device is in an attraction detection state, the light emitter of the ranging unit emits a light beam toward the substrate and generates an attraction emission signal to the processing unit. The light sensor of the ranging unit senses the light beam reflected by the substrate and generates an attraction sensing signal to the processing unit. The processing unit calculates the attraction thickness of the substrate based on the time of generation of the attraction emission signal and the time of generation of the attraction sensing signal. When the detection device is in a direct detection state, the light emitter of the ranging unit emits the light beam toward the substrate and generates a direct emission signal to the processing unit. The light sensor of the ranging unit receives the light beam reflected by the substrate and generates a direct sensing signal to the processing unit. The processing unit calculates the direct thickness of the substrate based on the time of generation of the direct emission signal and the time of generation of the direct sensing signal.

[0015] Preferably, in the detection device according to the present invention, the substrate is a ceramic substrate.

[0016] Preferably, in the detection device according to the invention, the attraction mechanism includes: a plurality of air extraction holes disposed on the attraction surface of the base plate; and a vacuum element coupled to the air extraction holes, wherein the vacuum element generates a negative pressure upon activation to attract the substrate placed on the attraction surface, such that the substrate and the attraction surface are parallel to each other.

[0017] Preferably, in the detection device according to the present invention, the ranging unit includes a group of optical diameter lenses, a group of dispersive lenses, and a group of dispersive light-receiving lenses, and the processing unit calculates the distance between the ranging unit and the base plate through color confocal displacement sensing.

[0018] In summary, the detection device and detection method provided by this invention successfully eliminate the influence of thickness difference on warpage detection when the substrate has thickness difference. Moreover, it can be achieved by only performing a subtraction operation through the processing unit, making it very suitable for detection in mass production. It has wide applicability and high accuracy.

[0019] To enable those skilled in the art to understand the purpose, features and effects of the present invention, the present invention will be described in detail below through specific embodiments and in conjunction with the accompanying drawings. Attached Figure Description

[0020] Figure 1 This is a block diagram of the detection device according to the present invention;

[0021] Figure 2 A block diagram illustrating the steps of performing the detection method of the present invention;

[0022] Figure 3 This is a block diagram of a detection device according to a first embodiment of the present invention;

[0023] Figure 4 This is a schematic diagram illustrating the detection device according to the first embodiment of the present invention in the state of attracting and detecting samples;

[0024] Figure 5 This is a schematic diagram illustrating the detection device according to the first embodiment of the present invention in the direct detection state.

[0025] Figure 6 A timing diagram illustrating the multiple direct ranging signals according to the first embodiment of the present invention;

[0026] Figure 7 A timing diagram illustrating the plurality of attraction ranging signals according to the first embodiment of the present invention;

[0027] Figure 8 A block diagram illustrating the steps of performing the detection method of the first embodiment of the present invention;

[0028] Figure 9 A schematic diagram of a detection device according to a second embodiment of the present invention; and

[0029] Figure 10 A schematic diagram illustrating the ranging unit according to a third embodiment of the present invention. Detailed Implementation

[0030] The inventive concept will now be more fully described below with reference to the accompanying drawings, in which exemplary embodiments illustrating the inventive concept are shown. The advantages and features of the inventive concept, as well as methods of achieving it, will become apparent from the exemplary embodiments described in more detail below with reference to the drawings. However, it should be noted that the inventive concept is not limited to the exemplary embodiments described below, but can be implemented in various forms. Therefore, exemplary embodiments are provided only to disclose the inventive concept and to enable those skilled in the art to understand the category of the inventive concept. In the drawings, exemplary embodiments of the inventive concept are not limited to the specific examples provided herein and are exaggerated for clarity.

[0031] The terminology used herein is for illustrative purposes only and is not intended to limit the invention. Unless the context clearly indicates otherwise, the singular forms of the terms “a” and “the” as used herein are intended to include multiple forms. The term “and / or” as used herein includes any and all combinations of one or more of the associated listed items. It should be understood that when an element is referred to as “connected” or “coupled” to another element, the element may be directly connected or coupled to the other element or there may be intermediate elements.

[0032] Similarly, it should be understood that when an element (e.g., a layer, region, or substrate) is said to be "on" another element, the element may be directly on the other element, or there may be intermediate elements present. In contrast, the term "directly" implies the absence of intermediate elements. It should also be understood that when the terms "comprising" or "including" are used herein, they indicate the presence of the stated features, integers, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof.

[0033] Furthermore, exemplary embodiments in the detailed description will be illustrated by cross-sectional views that serve as idealized exemplary diagrams of the inventive concept. Accordingly, the shape of the exemplary diagrams may be modified according to manufacturing techniques and / or tolerable errors. Therefore, exemplary embodiments of the inventive concept are not limited to the specific shapes shown in the exemplary diagrams, but may include other shapes that may be produced according to the manufacturing process. The areas illustrated in the drawings have general characteristics and are used to illustrate specific shapes of elements. Therefore, this should not be considered as limiting the scope of the inventive concept.

[0034] It should also be understood that although terms such as "first," "second," and "third" may be used herein to describe various elements, these elements should not be limited to these terms. These terms are only used to distinguish individual elements. Therefore, a first element in some embodiments may be referred to as a second element in other embodiments without departing from the teachings of the invention. Exemplary embodiments of the inventive concepts illustrated and described herein include their complementary counterparts. Throughout this specification, the same reference numerals or the same indicators denote the same elements.

[0035] Furthermore, exemplary embodiments are illustrated herein with reference to sectional views and / or plan views, which are idealized exemplary illustrative diagrams. Therefore, deviations from the illustrated shapes are expected due to factors such as manufacturing techniques and / or tolerances. Thus, exemplary embodiments should not be construed as limited to the shapes of the areas shown herein, but are intended to include shape deviations caused, for example, by manufacturing processes. Therefore, the areas shown in the figures are schematic, and their shapes are not intended to illustrate the actual shapes of the areas of the device, nor are they intended to limit the scope of the exemplary embodiments.

[0036] Please see Figures 1-2 As shown, Figure 1 This is a block diagram of the detection device according to the present invention; Figure 2 A block diagram illustrating the steps of performing the detection method of the present invention. For example... Figure 1 As shown, the detection device 100 according to the present invention includes: a base plate 11, a ranging unit 12, and a processing unit 13.

[0037] Specifically, the detection device 100 according to the present invention is applied in an environment that detects a substrate 200. In some embodiments, the substrate 200 may be made of a non-metallic material, such as a ceramic substrate, a wafer, etc. In other embodiments, the substrate 200 may be made of a metallic material, such as an aluminum substrate (Metal Core PCB, MCPCB), meaning that the present invention has wide applicability.

[0038] Specifically, according to the invention, the base plate 11 has an attraction surface 111 and an attraction mechanism 112. For example... Figure 2 As shown, substrate 200 is placed on attraction surface 111, and attraction mechanism 112 is used to attract the substrate. In some embodiments, when substrate 200 is made of a non-metallic material, since non-metallic materials are non-magnetic, attraction mechanism 112 can use vacuum adsorption to make substrate 200 parallel to attraction surface 111. In this case, the attraction strength generated by attraction mechanism 112 can be between 0.2 kgf and 700 kgf, preferably between 0.5 kgf and 300 kgf, but the invention is not limited thereto. In other embodiments, when substrate 200 is made of a metallic material, since metallic materials have good magnetic permeability, attraction mechanism 112 can use magnetic attraction to attract substrate 200, making substrate 200 parallel to attraction surface 111. In this case, the magnetic force generated by attraction mechanism 112 can be between 1000 Gauss and 10000 Gauss, preferably between 2000 Gauss and 3000 Gauss, but the invention is not limited thereto.

[0039] Specifically, according to the present invention, the ranging unit 12 is coupled to the base plate 11 and is used to sense the distance between the ranging unit 12 and the substrate 200. In some embodiments, the ranging unit 12 may be a non-contact ranging unit. For example, the ranging unit 12 may include a light emitter and a light sensor, and the ranging unit 12 may sense the distance between the ranging unit 12 and the substrate 200 using time-of-flight ranging or structured light. In other embodiments, the ranging unit 12 may be a contact ranging unit. For example, the ranging unit 12 may include at least one probe, which may include a body and a probe ball. The material of the body may be, for example, titanium, tungsten carbide, stainless steel, ceramic, and carbon fiber, and the material of the probe ball may be, for example, ruby, silicon nitride, zirconium oxide, ceramic, and tungsten carbide, but the present invention is not limited thereto.

[0040] Specifically, according to the present invention, the processing unit 13 is coupled to the ranging unit 12. In some embodiments, the processing unit 13 can be one or a combination of a server, a computer, and a smartphone. It should be further noted that the processing unit 13 and the ranging unit 12 according to the present invention can transmit information via wireless signals, the wireless signals being selected from one of the following wireless communication protocols: Radio Frequency Identification (RFID), Near Field Communication (NFC), Bluetooth, 3G, 4G, Wi-Fi, WLAN, and 5G; furthermore, the processing unit 13 and the ranging unit 12 according to the present invention can also transmit information via wired signals, the wired signals being one of Ethernet or electrical signal transmission lines; however, the present invention is not limited thereto.

[0041] Specifically, the detection device 100 according to the present invention may have an attraction detection state and a direct detection state. In the attraction detection state, the attraction mechanism 112 is activated to attract the substrate 200 placed on the base plate 11, the ranging unit 12 is activated to sense the distance between the ranging unit 12 and the substrate 200, and the ranging unit 12 generates an attraction ranging signal which is transmitted to the processing unit 13. The processing unit 13 calculates the attraction thickness of the substrate 200 based on the attraction ranging signal. In the direct detection state, the attraction mechanism 112 is closed to stop attracting the substrate 200 placed on the base plate 11, the ranging unit 12 is activated to sense the distance between the ranging unit 12 and the substrate 200, the ranging unit 12 generates a direct ranging signal which is transmitted to the processing unit 13, the processing unit 13 calculates the direct thickness of the substrate 200 based on the direct thickness and the attraction thickness, and the processing unit 13 calculates the warpage value of the substrate based on the direct thickness and the attraction thickness. This warpage value is used to represent the degree of warpage of the substrate.

[0042] It should be further explained that, in this invention, the term "attraction" can encompass both electrical and physical attraction. It is understood that attraction thickness refers to the thickness of the substrate 200 measured by the ranging unit 12 when the attraction mechanism 112 is activated. Furthermore, direct thickness refers to the thickness of the substrate measured by the ranging unit 12 when the attraction mechanism 112 is deactivated. It is understood that by subtracting attraction thickness from direct thickness, the warpage value of the substrate 200 can be calculated. Since both attraction thickness and direct thickness are measured using the same substrate 200, the warpage value generated by the subtraction operation can eliminate the influence of thickness differences.

[0043] To further understand the structural features, technical means, and expected effects of this invention, the usage of this invention is described below, which will provide a deeper and more specific understanding of the invention.

[0044] Please see Figure 2 And paired with Figure 1 As shown, based on the detection device 100 described above, the present invention further provides a detection method for the detection device 100, comprising the following steps:

[0045] In preparation step S11, the substrate 200 is placed on the attraction surface 111 of the base plate 11.

[0046] In the attraction step S12, the attraction mechanism 112 is activated and attracts the substrate 200 placed on the base plate 11, so that the substrate 200 and the attraction surface 111 are parallel to each other.

[0047] In the attraction ranging step S13, the ranging unit 12 is activated to sense the distance between the ranging unit 12 and the substrate 200, and the ranging unit 12 generates an attraction ranging signal that is transmitted to the processing unit 13.

[0048] In the attraction thickness calculation step S14, the processing unit 13 calculates the attraction thickness of the substrate 200 based on the attraction ranging signal.

[0049] In the closing suction step S15, the suction mechanism 112 is closed to stop suctioning the substrate 200 placed on the base plate 11.

[0050] In the warpage value calculation step S16, the processing unit 13 calculates and generates the warpage value of the substrate 200 based on the direct thickness and the attraction thickness. The warpage value is used to represent the degree of warpage of the substrate 200.

[0051] Specifically, before the suction step S12 or after the suction step S15 is closed, the detection method further includes:

[0052] In the direct ranging step S21, the ranging unit 12 is activated to sense the distance between the ranging unit 12 and the substrate 200, and the ranging unit 12 generates a direct ranging signal that is transmitted to the processing unit 13.

[0053] In the direct thickness calculation step S22, the processing unit 13 calculates the direct thickness of the substrate 200 based on the direct ranging signal.

[0054] It is understood that whether the direct ranging step S21 and the direct thickness calculation step S22 are performed before the attraction step S12 or after the attraction step S15 is turned off, it does not affect the calculation of the warpage value of the substrate 200 by the detection method of the present invention. In some embodiments, the detection method of the present invention may further include a thickness difference calculation step. When the substrate 200 has a preset thickness, the processing unit 13 can subtract the preset thickness from the attraction thickness to generate a thickness difference value. It should be further noted that in the present invention, the preset thickness refers to the original set thickness of the substrate 200, not the thickness measured by the ranging unit 12. Therefore, by subtracting the attraction thickness generated after the attraction mechanism 112 is activated from the original set thickness of the substrate 200, a thickness difference value for the substrate 200 can be generated. However, the present invention is not limited to this.

[0055] It is worth mentioning that, according to the present invention, the substrate detection device 100, combined with the detection method, can perform distance sensing on at least three points on the substrate 200 to construct the plane on which the substrate 200 is located, thereby confirming whether there is a thickness difference on the substrate 200. More specifically, in some embodiments, the detection device 100 can perform distance sensing on the four corners of the substrate 200 to confirm whether there is a warping problem on the four corners of the substrate 200, thereby improving the stability and accuracy of the detection device 100 and the detection method of the present invention; however, the present invention is not limited thereto. In other embodiments, the detection device 100 can perform distance sensing on a line formed by multiple points on the substrate 200, or the detection device 100 can perform distance sensing on a surface formed by multiple lines on the substrate 200, thereby further improving the stability and accuracy of the detection device 100 and the detection method of the present invention; however, the present invention is not limited thereto.

[0056] It is worth mentioning again that the detection device 100 according to the present invention can further classify the substrate 200 by the warp value of the substrate 200. When the warp value of the substrate 200 is greater than a threshold, the processing unit 13 can confirm that the warp value of the substrate 200 is too large and generate error information. When the warp value of the substrate 200 is less than the threshold, the processing unit 13 can confirm that the warp value of the substrate 200 is normal and generate correct information. Subsequently, the substrates 200 with different warp values ​​can be classified by automated equipment according to the correct information and the error information, thereby realizing an automated classification detection device 100. Both the measurement and classification can be completed by one person controlling the detection device 100, achieving the effects of saving space, saving labor, and reducing labor intensity.

[0057] Therefore, the detection device 100 according to the present invention, combined with the detection method, successfully eliminates the influence of thickness difference on warping detection when there is a difference in thickness of the substrate 200, and can be achieved by only one subtraction operation through the processing unit 13. It is very suitable for detection in mass production and has wide applicability and high accuracy.

[0058] Hereinafter, with reference to the accompanying drawings, a first embodiment of the detection apparatus 100 of the present invention will be described so that those skilled in the art can more clearly understand possible variations. Elements indicated by the same element symbols as described above are substantially the same as those described above. Figure 1 The same components, features, and advantages as those in the detection device 100 will not be repeated hereafter.

[0059] Please see Figures 3-5 As shown, Figure 3 This is a block diagram of a detection device according to a first embodiment of the present invention;

[0060] Figure 4 This is a schematic diagram illustrating the detection device according to the first embodiment of the present invention in the state of attracting and detecting samples; Figure 5 This is a schematic diagram illustrating the detection device according to the first embodiment of the present invention in a direct detection state. (See attached diagram.) Figure 3 As shown, the detection device 100A according to the first embodiment of the present invention includes: a base plate 11A, a ranging unit 12A, and a processing unit 13A, wherein the ranging unit 12A includes a light emitter 121A and a light sensor 122A.

[0061] Specifically, in this embodiment, the light emitter 121A according to the first embodiment of the present invention can be, for example, a pulsed light emitter or a laser diode, and the light emitter 121A is used to emit a light beam L. In some embodiments, the wavelength range of the light beam L can be [specified range]. Furthermore, the light sensor 122A according to the first embodiment of the present invention can be, for example, a complementary metal-oxide-semiconductor image sensor, and the light sensor 122A is used to receive the light beam L reflected by the substrate 200A. In this way, the ranging unit 12A according to the first embodiment of the present invention can calculate the distance between the ranging unit 12A and the substrate 200A without contacting the substrate 200A using time-of-flight ranging.

[0062] Specifically, in this embodiment, the suction mechanism 112A according to the first embodiment of the present invention may include a suction port 1121A and a vacuum element 1122A. The suction port 1121A is disposed on the suction surface 111A of the base plate 11A and may be in contact with the substrate 200A to attract the substrate 200A placed on the suction surface 111A of the base plate 11A. Furthermore, the vacuum element 1122A is coupled to the suction ports 1121A. When activated, the vacuum element 1122A generates a negative pressure to attract the substrate 200A placed on the suction surface 111A of the base plate 11A, making the substrate 200A parallel to the suction surface 111A. It is understood that since the substrate 200A may be flexible, when the vacuum element 1122A generates a negative pressure to attract the substrate 200A placed on the suction surface 111A, any warping that may exist in the substrate 200A can be effectively eliminated. In this embodiment, the vacuum element 1122A can generate negative pressure by pumping air through a motor, so that the suction mechanism 112A can attract the substrate 200A placed on the suction surface 111A. However, the present invention is not limited to this.

[0063] Please see Figures 6-7 As shown, and paired with Figures 4-5 As shown, Figure 6 A timing diagram illustrating the multiple direct ranging signals according to the first embodiment of the present invention; Figure 7 The following is a timing diagram illustrating the multiple attraction ranging signals according to the first embodiment of the present invention. In this embodiment, when the detection device 100A is in the attraction detection state A1, the attraction mechanism 112A is activated and attracts the substrate 200A placed on the base plate 11A. The light emitter 121A of the ranging unit 12A emits a light beam L toward the substrate 200A and generates an attraction emission signal P1 to the processing unit 13A. The light sensor 122A of the ranging unit 12A senses the light beam L reflected by the substrate 200A and generates an attraction sensing signal P1' to the processing unit 13A. In this embodiment, when the detection device 100A is in the direct detection state A2, the attraction mechanism 112A is closed to stop attracting the substrate 200A placed on the base plate 11A. The light emitter 121A of the ranging unit 12A emits a light beam L toward the substrate 200A and generates a direct emission signal P2 to the processing unit 13A. The light sensor 122A of the ranging unit 12A senses the light beam L reflected by the substrate 200A and generates a direct sensing signal P2' to the processing unit 13A.

[0064] Specifically, in this embodiment, the processing unit 13A can calculate the distance between the ranging unit 12A and the substrate 200A using the following formula (1), where c is the speed of light, d is the distance between the time-of-flight ranging sensor 100A and the sensing target 200A, θ is the angle between the time-of-flight ranging sensor 100A and the sensing target 200A, and T is time. However, when the distance d between the time-of-flight ranging sensor 100A and the sensing target 200A is large, θ can be ignored, resulting in a value of 1 for cos(θ), which means that half of the optical path length is the distance between the time-of-flight ranging sensor 100A and the sensing target 200A. More specifically, when the detection device 100A is in the attraction detection state A1, the processing unit 13A calculates the attraction thickness D1 of the substrate 200A using the attraction emission signal P1 and the attraction sensing signal P1'. The time difference T1 can be the time length between the rising edge of the attraction emission signal P1 and the rising edge of the attraction sensing signal P1'. In addition, when the detection device 100A is in the direct detection state A2, the processing unit 13A calculates the direct thickness D2 of the substrate 200A using the direct emission signal P2 and the direct sensing signal P2'. The time difference T2 can be the time length between the rising edge of the direct emission signal P2 and the rising edge of the direct sensing signal P2'. It can be understood that the processing unit 13A can multiply the time difference T1 and the time difference T2 by the speed of light (c) and divide by 2 (i.e., by formula (1)) to calculate the distance between the ranging unit 12A and the substrate 200A, and subtract the aforementioned distance from the distance between the ranging unit 12A and the base plate 11A to obtain the attraction thickness D1 and the direct thickness D2.

[0065]

[0066] Specifically, in this embodiment, the processing unit 13A can calculate the warpage value W and thickness difference G of the substrate 200A using the following formulas (2) and (3). The warpage value W represents the degree of warpage of the substrate 200A. The warpage value W can represent the degree of curvature of the plane in space. Numerically, it is defined as the distance between the two points furthest apart in the height direction of the warped plane, and the warpage value W of the absolute plane is 0. The thickness difference G can represent whether there is a difference between the substrate 200A and the preset thickness DS. The preset thickness DS represents the original preset thickness of the substrate 200A, while the attraction thickness D1 is the thickness of the substrate 200A measured when it is not warped. Therefore, the thickness difference G of the substrate 200A is calculated by subtracting the attraction thickness D1 from the preset thickness DS and taking the absolute value. However, in other embodiments, when the thickness difference G is generated simply by subtracting the attracted thickness D1 from the preset thickness DS, the thickness difference G can also have a positive or negative sign. When the thickness difference G is positive, it indicates that the attracted thickness D1 is greater than the preset thickness DS; when the thickness difference G is negative, it indicates that the attracted thickness D1 is less than the preset thickness DS. In this way, the processing unit 13A can measure the warpage value W and the thickness difference G by performing only two subtraction operations, which is very suitable for inspection in mass production and has wide applicability.

[0067] W = D1 - D2......(2)

[0068] G=|D1-DS|......(3)

[0069] Please see Figure 8 And paired with Figures 3-7 As shown, Figure 8 This is a block diagram illustrating the steps of performing the detection method according to the first embodiment of the present invention. Based on the detection device 100A of the first embodiment, the present invention further provides a detection method using the detection device 100A of the first embodiment, comprising the following steps:

[0070] Preparation step S11': Place the substrate 200A on the attraction surface 111A of the base plate 11A.

[0071] In the attraction step S12', the attraction mechanism 112A is activated and attracts the substrate 200A placed on the base plate 11A, so that the substrate 200A and the attraction surface 111A are parallel to each other.

[0072] In the attraction emission step S131', the light emitter 121A of the ranging unit 12A emits a light beam L toward the substrate 200A and generates an attraction emission signal P1 to the processing unit 13.

[0073] In the attraction sensing step S132', the light sensor 122A of the ranging unit 12A senses the light beam L reflected by the substrate 200A and generates an attraction sensing signal P1' to the processing unit 13A.

[0074] In the attraction thickness calculation step S14', the processing unit 13A calculates the attraction thickness D1 of the substrate 200A based on the time when the attraction emission signal P1 is generated and the time when the attraction sensing signal P1' is generated.

[0075] The suction step S15' is closed, and the suction mechanism 112A is closed to stop suctioning the substrate 200A placed on the base plate 11A.

[0076] In the warpage value calculation step S16', the processing unit 13A calculates and generates the warpage value W of the substrate 200A based on the direct thickness D2 and the attraction thickness D1. The warpage value W is used to represent the degree of warpage of the substrate 200A.

[0077] In the thickness difference calculation step S17', the processing unit 13A performs a subtraction operation between the attraction thickness D1 and the preset thickness DS and takes the absolute value to generate the thickness difference value G.

[0078] Specifically, before the attraction step S12' or after the attraction step S15' is closed, the detection method further includes:

[0079] In the direct emission step S211', the light emitter 121A of the ranging unit 12A emits a light beam L toward the substrate 200A and generates a direct emission signal P2 to the processing unit 13A;

[0080] In the direct sensing step S212', the light sensor 122A of the ranging unit 12A receives the light beam L reflected by the substrate 200A and generates a direct sensing signal P2' to the processing unit 13A.

[0081] In the direct thickness calculation step S22', the processing unit 13A calculates the direct thickness D2 of the substrate 200A based on the time when the direct transmission signal P2 is generated and the time when the direct sensing signal P2' is generated.

[0082] Therefore, as can be seen from the above description, the detection device 100A of the first embodiment of the present invention, combined with the detection method, calculates the attraction thickness D1 and direct thickness D2 of the substrate 200A without contacting the substrate 200A through the light emitter 121A and the light sensor 122A, and calculates the warpage value W and thickness difference G of the substrate 200 at the attraction thickness D1 and direct thickness D2, thus successfully eliminating the influence of thickness difference on the warpage value calculation, and has wide applicability and high accuracy.

[0083] Other examples of the detection device 100 are provided below to enable those skilled in the art to better understand possible variations. Elements indicated by the same element symbols as in the above embodiments are substantially the same as those referenced above. Figures 1-8 The components, features, and advantages that are the same as those of the detection devices 100 and 100A will not be repeated.

[0084] Please see Figure 9 As shown, Figure 9 This is a schematic diagram of a detection device according to a second embodiment of the present invention. Figure 9 As shown, the detection device 100B according to the second embodiment of the present invention includes: a base plate 11B, a ranging unit 12B, and a processing unit 13B, wherein the ranging unit 12B includes a probe 123B.

[0085] Specifically, compared to the first embodiment, the ranging unit 12B according to the second embodiment of the present invention includes a probe 123B, which is movably disposed above the substrate 200B. The probe 123B contacts the substrate 200B by moving downward to sense the distance between the ranging unit 12B and the substrate 200B. Figure 9 As shown, in this embodiment, the probe 123B includes a body 1231B and a probe ball 1232B. There may be four probe balls 1232B, each correspondingly positioned above one of the four corners of the substrate 200, to confirm whether there is warping at the four corners of the substrate 200, thereby improving the stability and accuracy of the detection device 100 and the detection method of the present invention. Accordingly, the ranging unit 12B of the second embodiment of the present invention calculates the attraction thickness D1 and direct thickness D2 of the contact substrate 200A through contact, in order to calculate the warping value W and the thickness difference G of the substrate 200.

[0086] Please see Figure 10 As shown, Figure 10This is a schematic diagram illustrating the ranging unit according to the third embodiment of the present invention. Compared to the first and second embodiments, the ranging unit 12C according to the third embodiment includes a light emitter 121C, a collimating diameter lens group 124C, a dispersive lens group 125C, and a dispersive light receiving group 126C. The light emitter 121C emits a light beam L, the collimating diameter lens group 124C collimates the light beam emitted by the light emitter 121C, the dispersive lens group 125C disperses the collimated light beam, and the dispersive light receiving group 126C adjusts the dispersed light beam to its maximum numerical aperture and longest dispersion length. In this way, the processing unit 13 can calculate the distance between the ranging unit 12 and the base plate 11 through color confocal displacement sensing, and further calculate the thickness of the substrate 200 by the distance difference before and after placing the substrate 200. However, the present invention is not limited to this. Since the calculation of color confocal displacement sensing is familiar to those skilled in the art, it will not be described in detail here.

[0087] The above describes the implementation of the present invention through specific embodiments. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification.

[0088] The above description is only a preferred embodiment of the present invention and is not intended to limit the scope of the present invention; any equivalent changes or modifications made without departing from the spirit disclosed in the present invention should be included in the following claims.

Claims

1. A method for detecting a substrate, applied in an environment where a substrate is detected using a detection device, the detection device comprising a base plate, a ranging unit, and a processing unit, the base plate having an attraction mechanism and an attraction surface, the base plate being coupled to the ranging unit, and the processing unit being coupled to the ranging unit, the detection method comprising the following steps: Preparation step: Place the substrate on the attraction surface of the base plate; In the attraction step, the attraction mechanism is activated and attracts the substrate placed on the base plate, so that the substrate and the attraction surface are parallel to each other. In the attraction ranging step, the ranging unit is activated to sense the distance between the ranging unit and the substrate, and the ranging unit generates at least one attraction ranging signal which is transmitted to the processing unit. The attraction thickness calculation step involves the processing unit calculating the attraction thickness of the substrate based on the attraction ranging signal. The suction step is closed, and the suction mechanism is closed to stop suctioning the substrate placed on the base plate; as well as The warpage value calculation step involves the processing unit calculating and generating a warpage value for the substrate based on the direct thickness and the attraction thickness. The warpage value is used to represent the degree of warpage of the substrate. The detection method further includes, either before the suction step or after the suction-closing step: In the direct ranging step, the ranging unit is activated to sense the distance between the ranging unit and the substrate, and the ranging unit generates at least one direct ranging signal which is transmitted to the processing unit; and In the direct thickness calculation step, the processing unit calculates the direct thickness of the substrate based on the direct ranging signal.

2. The detection method according to claim 1, wherein, The substrate has a preset thickness, and the detection method further includes a thickness difference calculation step, wherein the processing unit performs a subtraction operation between the attraction thickness and the preset thickness to generate a thickness difference value.

3. The detection method according to claim 1, wherein, The ranging unit includes at least one light emitter and at least one light sensor, and the attraction ranging step includes the following steps: In the attraction emission step, the light emitter of the ranging unit emits a light beam toward the substrate and generates an attraction emission signal to the processing unit; and In the attraction sensing step, the light sensor of the ranging unit senses the light beam reflected by the substrate and generates an attraction sensing signal to the processing unit. In the attraction thickness calculation step, the processing unit calculates the attraction thickness of the substrate based on the time when the attraction emission signal is generated and the time when the attraction sensing signal is generated.

4. The detection method according to claim 3, wherein, The direct ranging step includes the following steps: In the direct emission step, the light emitter of the ranging unit emits the light beam toward the substrate and generates a direct emission signal to the processing unit; In the direct sensing step, the optical sensor of the ranging unit receives the light beam reflected by the substrate and generates a direct sensing signal to the processing unit. In the direct thickness calculation step, the processing unit calculates the direct thickness of the substrate based on the time when the direct emission signal is generated and the time when the direct sensing signal is generated.

5. A substrate inspection apparatus, applied in an environment for inspecting substrates, the inspection apparatus comprising: A base plate having an attraction surface and an attraction mechanism, wherein the substrate is placed on the attraction surface and the attraction mechanism is used to attract the substrate; A ranging unit is coupled to the base plate, and the ranging unit is used to sense the distance between the ranging unit and the base plate; as well as A processing unit, which is coupled to the ranging unit; The detection device includes an attraction detection state and a direct detection state. In the attraction detection state, the attraction mechanism is activated to attract the substrate placed on the base plate. The ranging unit is activated to sense the distance between the ranging unit and the substrate. The ranging unit generates at least one attraction ranging signal, which is transmitted to the processing unit. The processing unit calculates the attraction thickness of the substrate based on the attraction ranging signal. In the direct detection state, the attraction mechanism is deactivated to stop attracting the substrate placed on the base plate. The ranging unit is activated to sense the distance between the ranging unit and the substrate. The ranging unit generates at least one direct ranging signal, which is transmitted to the processing unit. The processing unit calculates the direct thickness of the substrate based on the direct ranging signal. The processing unit also calculates a warpage value for the substrate based on the direct thickness and the attraction thickness. The warpage value represents the degree of warpage of the substrate.

6. The detection device according to claim 5, wherein, The substrate has a preset thickness, and the processing unit performs a subtraction operation between the attraction thickness and the preset thickness to generate a thickness difference.

7. The detection device according to claim 5, wherein, The ranging unit includes at least one light emitter and at least one light sensor. When the detection device is in an attraction detection state, the light emitter of the ranging unit emits a light beam toward the substrate and generates an attraction emission signal to the processing unit. The light sensor of the ranging unit senses the light beam reflected by the substrate and generates an attraction sensing signal to the processing unit. The processing unit calculates the attraction thickness of the substrate based on the time of generation of the attraction emission signal and the time of generation of the attraction sensing signal. When the detection device is in a direct detection state, the light emitter of the ranging unit emits the light beam toward the substrate and generates a direct emission signal to the processing unit. The light sensor of the ranging unit receives the light beam reflected by the substrate and generates a direct sensing signal to the processing unit. The processing unit calculates the direct thickness of the substrate based on the time of generation of the direct emission signal and the time of generation of the direct sensing signal.

8. The detection device according to claim 5, wherein, The substrate is a ceramic substrate.

9. The detection device according to claim 5, wherein, The attraction mechanism includes: Multiple air extraction holes are provided on the suction surface of the base plate; as well as A vacuum element is coupled to the plurality of air extraction holes. When activated, the vacuum element generates a negative pressure to attract the substrate placed on the attraction surface, such that the substrate and the attraction surface are parallel to each other.

10. The detection device according to claim 5, wherein, The ranging unit includes a group of optical diameter lenses, a group of dispersive lenses, and a group of dispersive light-collecting lenses. The processing unit calculates the distance between the ranging unit and the base plate through color confocal displacement sensing.

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