Precision film deposition method for magnetron sputtering and deposited film

Abstract

The present application discloses a method for precise thin film deposition by magnetron sputtering, which can be implemented using a precise thin film deposition device. The precise thin film deposition device comprises: a chamber, a substrate base for carrying a substrate to be deposited, one or more target bases for carrying the same or different target materials, and a film thickness meter respectively arranged at adjacent positions of the target base and the substrate base. The method comprises: performing a sputtering deposition operation, and determining a target monitoring position of the film thickness meter in one or more cycles separated by a predetermined time period; obtaining a target deposition parameter captured by the film thickness meter when it is at the target monitoring position, and adjusting the process parameters of the sputtering deposition operation based on the target deposition parameter.

Description

Technical Field

[0001] The present application relates to the field of industrial manufacturing, and in particular to a high-precision multi-component thin film precise deposition method for magnetron sputtering, and a deposited film prepared by the method. Background Art

[0002] The sputtering method for preparing thin film materials can refer to vaporizing the film material in a vacuum-enclosed chamber and depositing it on the substrate to form a thin film. This process can be roughly divided into three processes: target material vaporization, vacuum movement, and thin film growth. There are many ways to vaporize the target material, such as heating or electron beam bombardment. After the vaporized target atoms reach the substrate (or substrate), they do not stay at the arrival position but make various movements on the surface. The atoms and molecules shot toward the substrate collide with the surface, part of them are reflected, and the other part makes a jumping movement on the surface of the substrate under the combined action of their own energy and the energy corresponding to the substrate temperature. These atoms may absorb energy from the atoms that arrive later and leave, or they may be adsorbed somewhere or combined with other atoms to form atomic pairs. As more and more atoms are combined with it, the atomic pairs may further form stable nuclei, which gradually grow into islands. Multiple islands merge with each other to form an incomplete mesh structure. The atoms that arrive later continue to combine with the mesh part or fill the remaining holes until a continuous film is formed.

[0003] The mainstream physical vapor deposition equipment at present mainly includes magnetron sputtering, molecular beam epitaxy, electron beam evaporation and pulsed laser deposition. Molecular beam epitaxy refers to the epitaxial growth of crystals in an ultra-high vacuum environment, in which the various components and doping atoms constituting the crystal are sprayed onto the surface of a hot substrate at a certain thermal motion speed and in a certain proportion. Molecular beam epitaxy equipment has the advantages of high film quality, high deposition temperature, real-time monitoring and rapid adjustment of film layer components, but the growth rate is slow and not suitable for use in the industrial field. Electron beam evaporation belongs to physical vapor deposition. The equipment mainly consists of an electron gun that emits high-speed electrons and a magnetic field that makes the electrons move in a uniform circular motion. Electron beam evaporation technology refers to placing the evaporation material in a water-cooled crucible, using an electron beam to directly heat the material, gasifying the material to form a steam flow, and then condensing the evaporated material on the substrate to form a thin film. Pulsed laser deposition belongs to physical vapor deposition, which refers to focusing a high-power pulsed laser on the surface of the target material, and then the material absorbs a large amount of electromagnetic radiation to cause the target material to evaporate rapidly. In a vacuum, the evaporated material forms a plasma on the target surface in real time, and the plasma is deposited on the substrate in a direction to form a thin film. Magnetron sputtering equipment is widely used in industrial sites due to its advantages such as fast deposition rate, small substrate damage and temperature rise. At the same time, according to different sputtering requirements, real-time control of the composition ratio and thickness of the film is crucial for the preparation of high-performance films with low roughness and high uniformity.

[0004] However, current physical vapor deposition equipment usually adopts a single structure, which means that it is impossible to accurately detect the thin film sputtering parameters during the deposition process. It is not suitable for targeted thin film deposition of multiple materials, which limits the optimization of thin film deposition parameters. Summary of the invention

[0005] The technical problem to be solved by the present application is how to achieve precise control during the thin film deposition process.

[0006] In order to solve the above problems, the present application discloses a thin film precision deposition method for magnetron sputtering, and a deposited thin film prepared based on the thin film precision deposition method. The thin film precision deposition method can monitor the thin film sputtering rate in real time during the deposition process, and adjust the deposition parameters based on the monitoring results to achieve precise control of the deposition process.

[0007] On the one hand, the present application provides a method for precise deposition of thin films by magnetron sputtering. The method can be implemented using a precise thin film deposition device. The precise thin film deposition device may include: a chamber, a substrate base for carrying a substrate to be deposited, one or more target bases for carrying the same or different target materials, and a film thickness meter respectively arranged at adjacent positions of the target base and the substrate base. The method may include: performing a sputtering deposition operation, and determining a target monitoring position of the film thickness meter in one or more cycles separated by a predetermined time period; wherein a cycle includes: obtaining real-time deposition parameters captured by the film thickness meter at the current monitoring position; determining whether the real-time deposition parameters meet preset conditions; if satisfied, determining the current monitoring position of the film thickness meter as the target monitoring position; if not satisfied, adjusting the current monitoring position of the film thickness meter and executing the next cycle; obtaining the target deposition parameters captured when the film thickness meter is at the target monitoring position, and adjusting the process parameters of the sputtering deposition operation based on the target deposition parameters.

[0008] In some feasible implementations, for a film thickness meter located near the target material base, the real-time deposition parameters include at least a first real-time deposition rate; determining whether the real-time deposition parameters meet the preset conditions may include: obtaining a standard deposition rate; determining that when a first difference between the first real-time deposition rate and the standard deposition rate is less than a first preset value, the first real-time deposition parameter meets the preset condition; determining that when a first difference between the first real-time deposition rate and the standard deposition rate is not less than a first preset value, the first real-time deposition parameter does not meet the preset condition.

[0009] In some feasible implementations, for a film thickness meter located near the substrate base, the real-time deposition parameters include at least a second real-time deposition rate and a real-time deposition thickness; determining whether the real-time deposition parameters meet the preset conditions may include: obtaining a standard deposition thickness; determining that when a second difference between the real-time deposition thickness and the standard deposition thickness is less than a second preset value and / or a third difference between the second real-time deposition rate and the sum of one or more first real-time deposition rates is less than a third preset value, the real-time deposition parameters meet the preset conditions; determining that when a second difference between the real-time deposition thickness and the standard deposition thickness is not less than a second preset value and / or a third difference between the second real-time deposition rate and the sum of one or more first real-time deposition rates is not less than a third preset value, the real-time deposition parameters do not meet the preset conditions; in some feasible implementations, the first preset value may be The second preset value may be The third preset value may be

[0010] In some possible implementations, the predetermined time period does not exceed 5 minutes.

[0011] In some feasible implementations, the film thickness meter includes a probe and a telescopic mechanism connected to the probe; the telescopic mechanism is controlled to drive the probe to move so as to adjust the current monitoring position.

[0012] In some feasible implementations, the film thickness meter includes a quartz crystal film thickness meter, and the probe includes a quartz crystal oscillator; the quartz crystal oscillator of the film thickness meter located near the target material base is 1-20 cm away from the center of the target surface of the target material, and the quartz crystal oscillator of the film thickness meter located near the substrate base is 1-10 cm away from the center of the substrate.

[0013] In some feasible implementations, the thin film precision deposition device further includes a gas flow path connected to the cavity; the number of gas molecules in the cavity can be adjusted through the gas flow path.

[0014] In some feasible implementations, the process parameters include at least a voltage applied between an anode constructed by the substrate base and a cathode constructed by the target base, and the number of gas molecules.

[0015] On the other hand, the present application provides a deposited thin film, which is prepared based on the thin film precision deposition method as described above. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The present application will be further described in the form of exemplary embodiments, which will be described in detail by way of the accompanying drawings. These embodiments are not restrictive, and in these embodiments, the same number represents the same structure, wherein:

[0017] Figure 1 is an exemplary flow chart of a method for precise thin film deposition by magnetron sputtering according to some embodiments of the present application;

[0018] Figure 2 is an exemplary flow chart of a cycle according to some embodiments of the present application;

[0019] Figure 3 is an exemplary structural schematic diagram of a thin film precision deposition device according to some embodiments of the present application;

[0020] Figure 4 is a schematic diagram of an exemplary structure of a deposited thin film according to some embodiments of the present application. DETAILED DESCRIPTION

[0021] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are described in detail below in conjunction with the accompanying drawings. In the following description, many specific details are set forth to facilitate a full understanding of the present application. However, the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without violating the connotation of the present application, so the present application is not limited by the specific embodiments disclosed below.

[0022] It should be noted that when an element is referred to as being "fixed to" another element, it may be directly on the other element or there may be an element in the middle. When an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be an element in the middle at the same time. The terms "vertical", "horizontal", "left", "right" and similar expressions used herein are for illustrative purposes only.

[0023] The terms "first" and "second" used in this document are only used for descriptive purposes and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the features. In the description of the present invention, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0024] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used herein in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application. The terms "and / or" or "and / or" used herein include any and all combinations of one or more related listed items.

[0025] Some embodiments of the present application are described below with reference to the accompanying drawings. It should be noted that the following description is for illustrative purposes and is not intended to limit the scope of protection of the present application.

[0026] Figure 1 The following is an exemplary flow chart of a method for precise thin film deposition by magnetron sputtering according to some embodiments of the present application. The method for precise thin film deposition can be implemented using a precise thin film deposition device. Figure 3 FIG. 2 shows an exemplary structural diagram of a thin film precision deposition device according to some embodiments of the present application. Figure 3 As shown, the thin film precision deposition apparatus 300 may include a chamber 310, a substrate base 320, and a target base (such as Figure 3 The target base 330 and the target base 340 in the embodiment of the present invention are provided, and a film thickness meter is provided at adjacent positions of the substrate base 320 and the target base 330 / 340, such as Figure 3 The film thickness meter 350 shown in FIG. 1 is located adjacent to the substrate support and the film thickness meter 360 / 370 is located adjacent to the target support 330 / 340 .

[0027] The cavity 310 can be used to form a reaction space for magnetron sputtering deposition. For example, the interior of the cavity 310 is hollow, and this part of the hollow area can be the reaction space. In some feasible implementations, the shape of the cavity 310 can be regular or irregular. For example, the cavity 310 can have a regular shape such as a sphere, an ellipsoid, a cylinder, a cube, or an irregular shape obtained by combining two or more regular shapes. For example, a combination of a hemispherical and a cylindrical shape as shown in 3. The material of the cavity 310 can be, for example, stainless steel, or an outer layer of iron and an inner layer of stainless steel, or an outer layer of stainless steel and an inner layer of silicon carbide, or other materials.

[0028] The substrate base 320 can be used to support the substrate to be deposited. Figure 3 As shown in , the substrate base 320 may be a base having a planar support platform. The substrate to be deposited may be placed on the planar support platform. For example, the surface to be deposited may be facing downward to receive the scattered deposition atoms. In some feasible implementations, a baffle may be provided below the substrate base 320. The baffle may be used to block the deposition atoms to achieve control of the sputtering deposition time.

[0029] The target base (including the target base 330 and the target base 340) can be used to carry the target. In some feasible implementations, the number of the target bases can be one or more. For example, only one target base is needed for single-stage sputtering. However, when bipolar or multi-stage is used to prepare alloy deposition thin film layers, two or more target bases are required to carry different targets respectively. Figure 3 Two target bases are shown in FIG. 1 . For example, if a gold-tin alloy thin film is to be deposited on the substrate surface, a gold target will be placed on one of the target bases, and a tin target will be placed on the other target base. A baffle can also be provided on the target base. The baffle can protect the target from contamination and can also be used to control the ignition time of the target.

[0030] The film thickness meter (including the film thickness meter 350, the film thickness meter 360 and the film thickness meter 370) can be arranged near the substrate base 320, the target base 330 and the target base 340 to monitor the deposition rate, deposition thickness of the substrate, sputtering rate of the target, etc. or any combination thereof. The monitored data can be called deposition parameters. The deposition parameters can be used to adjust the operating parameters of the thin film precision deposition device.

[0031] The film thickness meter may include a quartz crystal film thickness meter, and the probe used to monitor the deposition parameters may include a quartz crystal oscillator. After the quartz crystal oscillator is coated to increase its thickness, the natural frequency of the crystal oscillator will be attenuated. The film thickness meter can monitor the deposition parameters of the deposited film by measuring the change of frequency or frequency-related parameters. The film thickness meter may also include a telescopic mechanism. The telescopic mechanism may be connected to the probe. The linear movement of the telescopic mechanism (e.g., a threaded screw, a planetary roller screw, etc.) can drive the probe to move, thereby adjusting the monitoring position of the probe.

[0032] The thin film precision deposition apparatus 300 may further include a gas flow path ( Figure 3 The gas flow path can be used to introduce a predetermined number of gas molecules (eg, argon gas molecules) into the cavity 310 to adjust the pressure inside the cavity 310. At the same time, the cavity 310 can also be evacuated through the gas flow path.

[0033] Return to reference Figure 1 The thin film precision deposition method 100 implemented by the thin film precision deposition apparatus 300 may include the following steps: Step 110, performing a sputtering deposition operation, and determining a target monitoring position of the film thickness meter in one or more cycles separated by a predetermined time period.

[0034] In some embodiments, the sputtering deposition operation can be performed according to pre-set process parameters. For example, the voltage applied between the anode and the cathode, the vacuum degree (or pressure) inside the chamber 310, etc. For example, after applying voltage (for example, thousands of voltages), a glow discharge begins to occur between the two poles. The positive ions generated by the discharge fly to the cathode under the action of the electric field and collide with the atoms on the surface of the target material. The target atoms (or sputtered atoms) that escape from the surface of the target material after the collision will be deposited on the surface of the substrate to form a film. Voltage, vacuum degree or other gases (for example, argon) added to the cavity 310 can affect the deposition rate of the sputtered atoms (for example, by affecting the kinetic energy of the sputtered atoms). And by accurately controlling the deposition rate, precise deposition of thin films can be achieved, such as precise control of multiple components of thin films in the case of multi-level targets.

[0035] It is understandable that the monitoring results of the deposition rate and the deposition thickness of the film thickness meter (including the film thickness meter 350, the film thickness meter 360 and the film thickness meter 370) will change according to the specific test position. For example, compared with the actual deposition rate, the difference between the deposition rate monitored by the film thickness meter at a position far away from the substrate / target and the actual deposition rate is smaller than the difference between the deposition rate monitored at a position close to the substrate / target and the actual deposition rate. In other words, there is a better test position for the film thickness meter (that is, the target monitoring position in this application).

[0036] In order to determine the target monitoring position, the position of the film thickness meter can be adjusted multiple times, such as in one or more cycles, until the requirements are met. Exemplarily, the deposition parameters monitored by the film thickness meter can be obtained in one cycle, and the deposition parameters can be compared with the standard deposition parameters. If the difference between the two is within the preset range, the position of the film thickness meter in the cycle can be determined as the target monitoring position. If not, the next cycle can be executed after the predetermined time period in order to determine the target monitoring position. In some embodiments, the predetermined time period may not exceed 5 minutes. For example, the predetermined time period may be 0.5 minutes, 1 minute, 1.5 minutes, 2 minutes, 2.5 minutes, 3 minutes, 3.5 minutes, 4 minutes, 4.5 minutes, 5 minutes, etc. The predetermined time period may also be any period within the above time range, and the present application does not make specific limitations. For specific instructions on the cycle, please refer to the present application Figure 2 part, I will not go into details here.

[0037] Step 120 , obtaining target deposition parameters captured when the film thickness meter is at the target monitoring position, and adjusting process parameters of the sputtering deposition operation based on the target deposition parameters.

[0038] In some embodiments, after determining that the film thickness meter is located at the target monitoring position, the target deposition parameters (e.g., target deposition rate, etc.) captured by the film thickness meter at the target monitoring position can be used. In some embodiments, the voltage applied between the anode constructed by the substrate base and the cathode constructed by the target base and the number of gas molecules inside the chamber 310 can be adjusted to achieve a change in deposition parameters.

[0039] Figure 2 is an exemplary flow chart of a cycle according to some embodiments of the present application. Figure 2 As shown, the loop round 200 may include the following operations.

[0040] Step 210: acquiring real-time deposition parameters captured by the film thickness meter at the current monitoring position.

[0041] In some embodiments, the current monitoring position may be the position of the probe (or quartz crystal oscillator) of the film thickness meter. For a film thickness meter located near the base of the target material, its quartz crystal oscillator is 1-20 cm away from the center of the target surface of the target material. For example, 1 cm, 2 cm, 3 cm, 4 cm, 5 cm, 6 cm, 7 cm, 8 cm, 9 cm, 10 cm, 11 cm, 12 cm, 13 cm, 14 cm, 15 cm, 16 cm, 17 cm, 18 cm, 19 cm, 20 cm, etc., or any value within the above distance range. For a film thickness meter located near the base of the substrate, its quartz crystal oscillator is 1-10 cm away from the center of the substrate, for example, 1 cm, 2 cm, 3 cm, 4 cm, 5 cm, 6 cm, 7 cm, 8 cm, 9 cm, 10 cm, etc., or any value within the above distance range. The distance between the quartz crystal oscillator and the center of the target surface and / or the center of the substrate can be adjusted by the movement of the telescopic mechanism connected to the probe.

[0042] In some embodiments, the real-time deposition parameters may include real-time deposition rate, real-time deposition thickness, etc. or a combination thereof. For example, for a film thickness meter located near the target base, the captured real-time deposition parameter may be the film deposition rate of the corresponding sputtering area. For a film thickness meter located near the substrate base, the captured real-time deposition parameters may include real-time deposition thickness and real-time deposition rate. These real-time deposition parameters may be used for subsequent comparisons to determine whether the monitoring position of the film thickness meter meets the requirements.

[0043] Step 220: Determine whether the real-time deposition parameters meet preset conditions.

[0044] In some embodiments, for a film thickness meter located near the target base, the real-time deposition parameter may include a first real-time deposition rate. In order to determine whether the first real-time deposition parameter meets a preset condition. A standard deposition rate may be obtained. The standard deposition rate may be predetermined. For example, the deposition rate is determined by measuring the thickness of a thin film deposited over a certain period of time using a step. A first difference between the first real-time deposition rate and the standard deposition rate may be determined and compared with a first preset value. The first difference may be an absolute value, and the first preset value may be When the first difference is less than the first preset value, the real-time deposition parameter can be determined to satisfy the preset condition. When the first difference is not less than the first preset value, the real-time deposition parameter can be determined to not satisfy the preset condition. In some embodiments, for a film thickness meter located near the substrate base, the real-time deposition parameter may include a second real-time deposition rate and a real-time deposition thickness. In order to determine whether the second real-time deposition parameter and / or the real-time deposition thickness meet the preset condition. The standard deposition thickness can be obtained. The same or similar, the standard deposition thickness can also be determined in advance. For example, the thickness of the thin film deposited within a certain period of time measured by the step test is used as the standard deposition thickness. The second difference between the real-time deposition thickness and the standard deposition thickness, and the third difference between the second real-time deposition rate and the sum of one or more first real-time deposition rates monitored by the film thickness meter near the target base can be determined. The second difference can be compared with the second preset value, and the third difference can be compared with the third preset value. Similarly, the second difference and the third difference can also be an absolute value, and the second preset value can be The third preset value may be When the second difference is less than the second preset value, and / or the third difference is less than the third preset value, the real-time deposition parameter can be determined to satisfy the preset condition. Otherwise, when the second difference is not less than the second preset value, and / or the third difference is not less than the third preset value, the real-time deposition parameter can be determined to not satisfy the preset condition.

[0045] In some embodiments, when the real-time deposition parameters meet the preset conditions, the process 200 may proceed to step 230. Otherwise, the process 200 may proceed to step 240.

[0046] Step 230: determine the current monitoring position of the film thickness meter as the target monitoring position.

[0047] In some embodiments, when the real-time deposition parameters meet the preset conditions, the current monitoring position can be considered to be a better monitoring position, and the deposition parameters captured by the film thickness meter are the same or similar to the deposition parameters of the substrate. Therefore, these deposition parameters can be used to adjust the process parameters of the entire sputtering deposition to achieve accurate thin film deposition.

[0048] Step 240, adjusting the current monitoring position of the film thickness meter.

[0049] In some embodiments, when the real-time deposition parameters do not meet the preset conditions, it can be considered that the deposition parameters captured by the film thickness meter at the current monitoring position differ from the deposition parameters of the substrate by a certain range and cannot be used as a basis for adjusting the process parameters. Therefore, the current monitoring position needs to be adjusted in order to perform the next cycle to achieve the determination of the target monitoring position.

[0050] In some embodiments, for a film thickness meter located near the target base, the magnitude relationship between the first real-time deposition rate and the standard deposition rate can be determined according to the first difference. If the first real-time deposition rate is less than the standard deposition rate, it means that the probe of the film thickness meter is too far from the center of the target surface and needs to be closer. At this time, the telescopic mechanism can be activated to drive the probe to start moving toward the center of the target surface. Conversely, when the first real-time deposition rate is greater than the standard deposition rate, the telescopic mechanism will drive the probe to move in the opposite direction, away from the center of the target surface.

[0051] Similarly or similarly, for a film thickness meter located near the substrate base, the magnitude relationship between the real-time deposition thickness and the standard deposition thickness can also be determined based on the second difference, and the magnitude relationship between the second real-time deposition rate and the sum of one or more first real-time deposition rates can also be determined based on the third difference. If the real-time deposition thickness is less than the standard deposition thickness, and / or the second real-time deposition rate is less than the sum of one or more first real-time deposition rates, the telescopic mechanism drives the probe to move closer to the center of the substrate. On the contrary, when the real-time deposition thickness is greater than the standard deposition thickness, and / or the second real-time deposition rate is greater than the sum of one or more first real-time deposition rates, the telescopic structure drives the probe to move away from the center of the substrate.

[0052] In some embodiments, the adjustment distance of the current monitoring position can be 1mm, 2mm, 3mm, 4mm, 5mm, 6mm, 7mm, 8mm, 9mm, 10mm, etc., which is not specifically limited in this application.

[0053] It should be noted that the above Figure 1The description of each step in the embodiment is only for example and explanation, and does not limit the scope of application of this specification. For those skilled in the art, under the guidance of this specification, Figure 1 Various modifications and changes may be made to the various steps in the present invention. However, these modifications and changes are still within the scope of this specification.

[0054] The thin film precision deposition method disclosed in the present application can obtain deposition parameters related to the substrate and / or target material in real time, perform real-time feedback adjustment, and achieve precise adjustment of the proportion of thin film components.

[0055] Another aspect of the present application discloses a deposited thin film. Figure 4 , Figure 4 is an exemplary structural diagram of a deposited film according to some embodiments of the present application. Figure 4 As shown, the deposited film may include a base layer 410, a buffer layer 420, an alloy layer 430 and a protective layer 440 from bottom to top in thickness direction. Each layer may be grown sequentially from top to bottom on the base layer 410 based on methods such as magnetron sputtering, molecular beam epitaxy, pulsed laser deposition or atomic layer deposition.

[0056] The base layer 410 can be prepared by using a material with stable chemical properties. For example, silicon, glass, ceramics, etc. The buffer layer 420 can be a metal layer or an alloy layer, which can have the advantages of reducing the surface roughness of the base layer 410, promoting the crystallization of the multilayer film layer, and improving the interface state of the multilayer film. For example, the buffer layer 420 can be a titanium metal layer or a titanium alloy layer. Its thickness can be 10-100nm. For example, 10nm, 20nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm, 100nm, etc. The alloy layer 430 can be prepared by the magnetron sputtering method as described above, for example, an Au-Sn alloy film. Traditional PbSn solder has a low melting point and its structure is coarsened at high temperatures, and its mechanical properties cannot meet the requirements of the automotive and aviation fields. The AuSn eutectic alloy has the characteristics of high electrical and thermal conductivity, good wettability, high welding strength, good fatigue resistance and corrosion resistance, and is widely used in brazing materials for high-reliability microelectronic devices and optoelectronic packaging. The composition of the alloy is Au80 / Sn20, and the melting point is 280°C. It is currently the only solder with a melting point in the range of 280-360°C that can replace high-melting-point lead-based alloys. However, since the AuSn alloy is composed of two brittle intermetallic compounds, the alloy is brittle, and it is very difficult to prepare foil strips and preforms that meet the packaging requirements. At present, AuSn alloys are mainly prepared by alloy electroplating. The AuSn alloys prepared by alloy electroplating have a simple process, a smooth surface, and little material waste. The advantage of preparing AuSn alloys by magnetron sputtering is that the deviation of a single component is small and easy to control. For the preparation of AuSn alloys with a specific component ratio, whether it is a single sputtering of a binary alloy target or a co-sputtering of a dual target, such as the preparation of Au80 / Sn20 alloy, it is difficult to accurately and in real time control the component ratio of the elements to prepare an AuSn alloy film that meets the performance index. The thin film precision deposition method disclosed in the present application can prepare an alloy film with precise elemental composition. For example, the process parameters can be adjusted to achieve the preparation of an alloy with a specific ratio based on the monitoring of the sputtering rate of the gold target and the tin target placed on the target base by the film thickness instrument. The thickness of the alloy layer 430 can be 100-200nm, for example, 100nm, 110nm, 120nm, 130nm, 140nm, 150nm, 160nm, 170nm, 180nm, 190nm, 200nm, etc. The protective layer 440 can be a metal layer or an alloy layer, which can have the functions of anti-oxidation and reducing surface roughness. For example, the protective layer 440 may be made of various metal materials and non-metal materials such as nickel (Ni), titanium (Ti), tantalum (Ta), ruthenium (Ru), platinum (Pt), silicon dioxide (SiO2), etc. The thickness of the protective layer 440 may be 1-1000 nm.For example, 1nm, 10nm, 100nm, 200nm, 300nm, 400nm, 500nm, 600nm, 700nm, 800nm, 900nm, 1000nm, etc.

[0057] The basic concepts have been described herein. It is obvious to those skilled in the art that the above detailed disclosure is merely an example and does not constitute a limitation of this specification. Although not explicitly stated herein, those skilled in the art may make various modifications, improvements and amendments to this specification. Such modifications, improvements and amendments are suggested in this specification, so such modifications, improvements and amendments still fall within the spirit and scope of the exemplary embodiments of this specification.

[0058] It should be noted that in order to simplify the description disclosed in this specification and thus help understand one or more embodiments of the invention, in the above description of the embodiments of this specification, multiple features are sometimes combined into one embodiment, figure or description thereof. However, this disclosure method does not mean that the features required by the subject of this specification are more than the features mentioned in the claims. In fact, the features of the embodiments are less than all the features of the single embodiment disclosed above.

[0059] In some embodiments, numbers describing the number of components and attributes are used. It should be understood that such numbers used in the description of the embodiments are modified by the modifiers "about", "approximately" or "substantially" in some examples. Unless otherwise specified, "about", "approximately" or "substantially" indicate that the numbers are allowed to vary by ±20%. Accordingly, in some embodiments, the numerical parameters used in the specification and claims are approximate values, which may change according to the required features of individual embodiments. In some embodiments, the numerical parameters should take into account the specified significant digits and adopt the general method of retaining digits. Although the numerical domains and parameters used to confirm the breadth of their range in some embodiments of this specification are approximate values, in specific embodiments, the setting of such numerical values ​​is as accurate as possible within the feasible range.

[0060] Finally, it should be understood that the embodiments described in this specification are only used to illustrate the principles of the embodiments of this specification. Other variations may also fall within the scope of this specification. Therefore, as an example and not a limitation, alternative configurations of the embodiments of this specification may be considered consistent with the teachings of this specification. Accordingly, the embodiments of this specification are not limited to the embodiments explicitly introduced and described in this specification.

Claims

1. A method for precise thin film deposition by magnetron sputtering, the method being implemented by a precise thin film deposition device; The thin film precision deposition device at least comprises: A chamber, used for carrying a substrate base for a substrate to be deposited, used for carrying one or more target bases of the same or different target materials, and film thickness meters respectively arranged at adjacent positions of the target base and the substrate base, wherein the film thickness meter arranged at an adjacent position of the target base is used for monitoring the sputtering rate of the target material, and the film thickness meter arranged at an adjacent position of the substrate base is used for monitoring the deposition rate and deposition thickness of the substrate; characterized in that the method comprises: Perform a sputtering deposition operation and determine a target monitoring position of the film thickness instrument in one or more cycles separated by a predetermined time period; wherein one cycle includes: Acquiring real-time deposition parameters captured by the film thickness meter at a current monitoring position; Determining whether the real-time deposition parameters meet preset conditions; If satisfied, determining the current monitoring position of the film thickness meter as the target monitoring position; If not satisfied, adjusting the current monitoring position of the film thickness meter and executing the next cycle; acquiring the target deposition parameters captured when the film thickness meter is at the target monitoring position, and adjusting the process parameters of the sputtering deposition operation based on the target deposition parameters; For a film thickness meter located near the target base, the real-time deposition parameter includes at least a first real-time deposition rate; and determining whether the real-time deposition parameter meets a preset condition includes: Obtain standard deposition rate; When it is determined that a first difference between the first real-time deposition rate and the standard deposition rate is less than a first preset value, the real-time deposition parameter meets the preset condition; When it is determined that a first difference between the first real-time deposition rate and the standard deposition rate is not less than a first preset value, the real-time deposition parameter does not meet the preset condition; For a film thickness meter located near the substrate base, the real-time deposition parameters include at least a second real-time deposition rate and a real-time deposition thickness; and determining whether the real-time deposition parameters meet preset conditions includes: Obtain standard deposition thickness; When it is determined that the second difference between the real-time deposition thickness and the standard deposition thickness is less than a second preset value and the third difference between the second real-time deposition rate and the sum of one or more first real-time deposition rates is less than a third preset value, the real-time deposition parameter meets the preset condition; when it is determined that the second difference between the real-time deposition thickness and the standard deposition thickness is not less than a second preset value and / or the third difference between the second real-time deposition rate and the sum of one or more first real-time deposition rates is not less than a third preset value, the real-time deposition parameter does not meet the preset condition; The first preset value is The second preset value is The third preset value is 2. The method for precise thin film deposition according to claim 1, characterized in that: The predetermined time period does not exceed 5 minutes.

3. The thin film precision deposition method according to claim 1, characterized in that: The film thickness meter comprises a probe and a telescopic mechanism connected to the probe; the probe is driven to move by controlling the telescopic mechanism to adjust the current monitoring position.

4. The method for precise thin film deposition according to claim 3, characterized in that: The film thickness meter includes a quartz crystal film thickness meter, and the probe includes a quartz crystal oscillator; the quartz crystal oscillator of the film thickness meter located near the target material base is 1-20 cm away from the center of the target surface of the target material, and the quartz crystal oscillator of the film thickness meter located near the substrate base is 1-10 cm away from the center of the substrate.

5. The thin film precision deposition method according to claim 1, characterized in that: The thin film precision deposition device also includes a gas flow path connected to the cavity; the number of gas molecules in the cavity can be adjusted through the gas flow path.

6. The method for precise thin film deposition according to claim 5, characterized in that: The process parameters at least include a voltage applied between an anode constructed by the substrate base and a cathode constructed by the target base and the number of gas molecules.

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