Crucible device and method of use
By using a movable insulation cover and lifting device to form an adjustable heat dissipation channel in the silicon carbide single crystal growth equipment, the complex problem of temperature gradient adjustment in the equipment is solved, and the stable growth and quality improvement of silicon carbide crystals are achieved.
Patent Information
- Application Number
- CN202411118589.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2024-08-15
- Publication Date
- 2024-12-31
- Estimated Expiration
- 2044-08-15
AI Technical Summary
The crucible temperature adjustment structure in existing silicon carbide single crystal growth equipment is complex and the temperature gradient adjustment is not accurate enough, which limits the stable growth and quality improvement of silicon carbide crystals.
By setting a movable insulation cover and lifting device on the upper part of the crucible, an adjustable heat dissipation channel is formed, and the online adjustment of the temperature gradient in the crucible is realized, which simplifies the control of the temperature gradient, and is especially suitable for scenes where multiple crucibles grow simultaneously.
Accurate control of the temperature gradient required for the growth of silicon carbide crystals is achieved, which improves the stability and quality of the crystals, simplifies equipment operation, and improves the durability of the equipment.
Smart Images
Figure CN118621433B_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of artificial crystal growth, and in particular to a crucible device and a use method thereof. Background Art
[0002] At present, the physical vapor transport method (PVT method) is the mainstream process technology for growing silicon carbide single crystals. The characteristics of this technology are that the silicon carbide polycrystalline raw material is placed in a closed cavity formed by a graphite crucible and a crucible cover in a vacuum environment or an atmosphere environment, and the silicon carbide seed crystal is bonded to the inner wall of the crucible cover. The silicon carbide polycrystalline raw material at the bottom of the graphite crucible is heated and sublimated, thereby growing a silicon carbide single crystal on the silicon carbide seed crystal; in the process of silicon carbide crystal growth, it is necessary to ensure that the temperature gradient of the graphite crucible is low on the top and high on the bottom, so as to achieve stable growth of silicon carbide crystals, reduce the radial temperature gradient of the seed crystal, reduce the degree of protrusion of the silicon carbide crystal, and help reduce the surface stress of the silicon carbide crystal and improve the crystal quality. By setting a heating and cooling device on the upper part of the crucible for temperature adjustment, it is necessary to add additional components, which greatly increases the complexity of the equipment and also increases the risk of equipment failure.
[0003] The equipment for growing silicon carbide single crystals in the related art has the following technical problems: the crucible temperature adjustment device has a complex structure, the temperature adjustment process is complex, the temperature gradient adjustment of the lower temperature and the upper temperature required for the growth of silicon carbide crystals in the crucible and the radial temperature gradient adjustment of the upper part of the crucible lack simpler and more effective means, and the adjustment is not precise enough, which limits the stable growth and quality improvement of silicon carbide crystals. Summary of the invention
[0004] The present invention provides a crucible device and a method for using the crucible. The device improves the heat transfer path by adjusting the heat dissipation in the upper area of the crucible, and realizes online heat dissipation adjustment during the crucible production process. The temperature gradient of high temperature in the lower part and low temperature in the upper part required for the growth of silicon carbide crystals in the crucible is adjusted, and the radial temperature gradient in the upper part of the crucible is reduced. The device is particularly conducive to the simple and rapid adjustment of the favorable temperature gradient required for the growth in the crucible of a silicon carbide growth device in which multiple crucibles are grown simultaneously. The device is simple to operate and more durable.
[0005] The embodiments of the present invention can be implemented as follows:
[0006] An embodiment of the present invention provides a crucible device, comprising:
[0007] Crucible body;
[0008] A heat-insulating member, the heat-insulating member covers the outside of the crucible body, wherein the heat-insulating member is provided with heat-dissipating holes;
[0009] A heat-insulating cover, which is movably arranged outside the heat-insulating component, and is provided with a through hole, and the through hole cooperates with the heat-dissipating hole to form a heat-dissipating channel;
[0010] A lifting device is connected to the heat-insulating cover, and is used to drive the heat-insulating cover to perform lifting and lowering movements, thereby adjusting the overlapping area and distance between the through hole and the heat-dissipating hole in the vertical direction, thereby adjusting the heat-dissipating channel.
[0011] Optionally, the heat dissipation hole includes a first heat dissipation hole, which penetrates the thermal insulation component in a horizontal direction, and the through hole includes a first through hole, which penetrates the thermal insulation cover in a horizontal direction, and when the thermal insulation cover follows the lifting device to perform lifting movement, the first through hole and the first heat dissipation hole cooperate.
[0012] Optionally, the heat dissipation hole also includes a second heat dissipation hole, which penetrates the thermal insulation component in a vertical direction, and the through hole also includes a second through hole, which penetrates the thermal insulation cover in a vertical direction, and the thermal insulation cover is used to form a cavity between the thermal insulation cover and the thermal insulation component when the thermal insulation cover moves upward, and the cavity is connected to the second heat dissipation hole and the second through hole at the same time.
[0013] Optionally, the crucible equipment also includes a crucible cover, which is arranged inside the heat insulation component and installed on the crucible body. The crucible cover has at least two crystal growth chambers, each of which is provided with a crystal, and at least two of the crystal growth chambers are connected to the crucible body.
[0014] Optionally, the crucible device further comprises a heater, which is disposed at the bottom of the crucible body and is used to heat the raw material at the bottom of the crucible body.
[0015] Optionally, the crucible device further comprises a heat insulation plate, which is arranged on the crucible cover, and both ends of the heat insulation plate are respectively abutted against the heat preservation component, thereby separating the upper part and the lower part of the crucible body.
[0016] Optionally, the heat insulation plate is provided with a plurality of mounting holes, and the crystal growth chamber is sleeved in each of the mounting holes.
[0017] Optionally, the crucible equipment further comprises a rotating device, wherein the rotating device is connected to the bottom of the crucible body, and the rotating device is used to drive the crucible body to rotate.
[0018] Optionally, the thermal insulation component is a cylindrical structure.
[0019] An embodiment of the present invention further provides a method for using a crucible device, and the method for using the crucible device includes:
[0020] The rotating device drives the crucible body to rotate, and the heater heats the bottom of the crucible body;
[0021] The lifting device drives the heat preservation cover to move upward, thereby moving the position of the first through hole in the vertical direction, so that the first through hole and the first heat dissipation hole overlap, thereby forming a heat dissipation channel together;
[0022] After the heat-insulating cover moves upward, a cavity is formed between the heat-insulating cover and the heat-insulating member, and the cavity is connected to the second heat-dissipating hole and the second through hole at the same time, thereby forming a heat-dissipating channel together.
[0023] The beneficial effects of the crucible device and the method of use of the embodiments of the present invention include, for example:
[0024] The crucible device includes a crucible body, a heat-insulating member, a heat-insulating cover, and a lifting device, wherein the heat-insulating member covers the outside of the crucible body, wherein the heat-insulating member is provided with heat-dissipating holes, the heat-insulating cover can be movably arranged on the outside of the heat-insulating member, the heat-insulating cover is provided with through holes, the through holes and the heat-dissipating holes cooperate to form a heat-dissipating channel together, the lifting device is connected to the heat-insulating cover, and the lifting device is used to drive the heat-insulating cover to perform lifting and lowering movements, so as to adjust the overlapping area and distance between the through holes and the heat-dissipating holes in the vertical direction, thereby adjusting the heat-dissipating channel. When in use, the outside of the crucible body is covered with a heat-insulating member, the outside of the heat-insulating member is movably provided with a heat-insulating cover, the heat-insulating member is provided with heat-dissipating holes, the heat-insulating cover is provided with through holes, and the through holes can cooperate with the heat-dissipating holes to form a heat-dissipating channel together. In order to ensure the temperature gradient inside the crucible body during the heating process, the lifting device can drive the heat preservation cover to move up and down, thereby adjusting the overlapping area of the through hole and the heat dissipation hole in the vertical direction, achieving the purpose of adjusting the size of the heat dissipation channel, and then realizing the adjustment of the heat dissipation in the upper area of the crucible, improving the heat transfer path, and realizing online adjustment of heat dissipation during the crucible production process. By adjusting the temperature gradient of high temperature at the bottom and low temperature at the top required for the growth of silicon carbide crystals in the crucible, and reducing the radial temperature gradient at the top of the crucible, it is particularly beneficial to the simple and rapid adjustment of the favorable temperature gradient required for the growth of the crucible in the silicon carbide growth equipment where multiple crucibles are grown simultaneously. The equipment is simple to operate and more durable, ensuring the stability of crystal growth and improving the crystal quality.
[0025] The method for using the crucible device uses the crucible device to work, and the method for using the crucible device includes: the rotating device drives the crucible body to rotate, and the heater heats toward the bottom of the crucible body; the lifting device drives the heat preservation cover to move up, thereby moving the position of the first through hole in the vertical direction, so that the first through hole and the first heat dissipation hole overlap, thereby forming a heat dissipation channel together; after the heat preservation cover moves up, a cavity is formed between the heat preservation cover and the heat preservation part, and the cavity is connected to the second heat dissipation hole and the second through hole at the same time, thereby forming a heat dissipation channel together. The method for using the crucible device can accurately control the temperature in the crucible, improve the heat dissipation effect, ensure the stability of crystal growth, and improve the quality of crystals. BRIEF DESCRIPTION OF THE DRAWINGS
[0026] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present invention and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying creative work.
[0027] Figure 1 A schematic diagram of the structure of the crucible device provided in this embodiment when the heat dissipation holes and the through holes are not connected;
[0028] Figure 2 A schematic diagram of the structure of the crucible device provided in this embodiment when the heat dissipation holes and the through holes are connected;
[0029] Figure 3 A top view of a crucible body provided in this embodiment having multiple crystal growth chambers disposed therein.
[0030] Icons: 10-crucible body; 20-heat-insulating part; 30-heat-dissipating hole; 31-first heat-dissipating hole; 32-second heat-dissipating hole; 40-heat-insulating cover; 50-through hole; 51-first through hole; 52-second through hole; 60-lifting device; 70-crucible cover; 80-crystal growth chamber; 90-heater; 100-heat-insulating board; 120-rotating device; 1000-crucible equipment. DETAILED DESCRIPTION
[0031] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Generally, the components of the embodiments of the present invention described and shown in the drawings here can be arranged and designed in various different configurations.
[0032] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the invention claimed for protection, but merely represents selected embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.
[0033] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, further definition and explanation thereof is not required in subsequent drawings.
[0034] In the description of the present invention, it should be noted that if the terms "upper", "lower", "inside", "outside", etc. appear to indicate an orientation or position relationship, they are based on the orientation or position relationship shown in the accompanying drawings, or are the orientation or position relationship in which the product of the invention is usually placed when used. They are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention.
[0035] In addition, the terms “first”, “second”, etc., if used, are merely used to distinguish between the descriptions and should not be understood as indicating or implying relative importance.
[0036] It should be noted that, in the absence of conflict, the features in the embodiments of the present invention may be combined with each other.
[0037] At present, the physical vapor transport method (PVT method) is the mainstream process technology for growing silicon carbide single crystals. The characteristic of this technology is that silicon carbide polycrystalline raw materials are placed in a closed cavity formed by a graphite crucible and a crucible cover in a vacuum environment or an atmosphere environment, and the silicon carbide seed crystal is bonded to the inner wall of the crucible cover. The silicon carbide polycrystalline raw materials at the bottom of the graphite crucible are heated and sublimated, thereby growing silicon carbide single crystals on the silicon carbide seed crystals. During the silicon carbide crystal growth process, it is necessary to ensure a temperature gradient with low temperature on the top and high temperature on the bottom of the graphite crucible in order to achieve stable growth of silicon carbide crystals, reduce the radial temperature gradient of the seed crystals, and reduce the degree of protrusion of the silicon carbide crystals, which is beneficial to reduce the surface stress of the silicon carbide crystals and improve the crystal quality.
[0038] The crucible equipment in the related art has technical problems such as complex structure of the crucible temperature adjustment equipment, complex temperature adjustment process, lack of simpler and more effective means for temperature gradient adjustment of high temperature at the bottom and low temperature at the top required for the growth of silicon carbide crystals in the crucible, and lack of precise adjustment and control. These problems limit the stable growth and quality improvement of silicon carbide crystals.
[0039] Please refer to Figure 1-Figure 3This embodiment provides a crucible device 1000, which can effectively improve the above-mentioned technical problems, can achieve online adjustment of heat dissipation on the upper part of the crucible, improve the heat dissipation effect, and thus accurately control the temperature in the crucible.
[0040] The crucible device 1000 includes a crucible body 10, a heat-insulating component 20, a heat-insulating cover 40 and a lifting device 60, wherein the heat-insulating component 20 covers the outside of the crucible body 10, wherein the heat-insulating component 20 is provided with heat-dissipating holes 30, the heat-insulating cover 40 can be movably arranged on the outside of the heat-insulating component 20, the heat-insulating cover 40 is provided with through holes 50, and the through holes 50 and the heat-dissipating holes 30 cooperate to form a heat-dissipating channel together, the lifting device 60 is connected to the heat-insulating cover 40, and the lifting device 60 is used to drive the heat-insulating cover 40 to perform lifting and lowering movements, thereby adjusting the overlapping area and distance between the through holes 50 and the heat-dissipating holes 30 in the vertical direction, and then adjusting the heat-dissipating channel.
[0041] Specifically, the heat dissipation hole 30 includes a first heat dissipation hole 31, which penetrates the thermal insulation component 20 in a horizontal direction. The through hole 50 includes a first through hole 51, which penetrates the thermal insulation cover 40 in a horizontal direction. When the thermal insulation cover 40 follows the lifting device 60 for lifting and lowering movement, the first through hole 51 cooperates with the first heat dissipation hole 31. The heat dissipation hole 30 also includes a second heat dissipation hole 32, which penetrates the thermal insulation component 20 in a vertical direction. The through hole 50 also includes a second through hole 52, which penetrates the thermal insulation cover 40 in a vertical direction. When the thermal insulation cover 40 moves upward, a cavity is formed between the thermal insulation cover 40 and the thermal insulation component 20, and the cavity is connected to the second heat dissipation hole 32 and the second through hole 52 at the same time.
[0042] It should be noted that the heat-insulating cover 40 includes a top plate and side plates connected to each other, the top plate and the side plates are vertically arranged, the top plate covers the top surface of the heat-insulating component 20, and the side plates are in contact with the side walls of the heat-insulating component 20.
[0043] The first through hole 51 passes through the side plate in the horizontal direction, and the second through hole 52 passes through the top plate in the vertical direction. There are multiple first through holes 51 and multiple second through holes 52, and the multiple first through holes 51 are spaced apart in the circumferential direction, and the multiple second through holes 52 are spaced apart in the circumferential direction.
[0044] In this embodiment, the heat preservation member 20 is a cylindrical structure having an installation cavity in which the crucible body 10 is disposed, the first heat dissipation hole 31 passes through the side wall of the heat preservation member 20 in the horizontal direction, and the second heat dissipation hole 32 passes through the top surface of the heat preservation member 20 in the vertical direction.
[0045] It can be understood that there are multiple first heat dissipation holes 31, which are spaced apart along the circumferential direction, and there are multiple second heat dissipation holes 32, which are spaced apart along the circumferential direction.
[0046] It should also be explained that, when the insulation cover 40 covers the top of the insulation component 20, the top plate of the insulation cover 40 and the top surface of the insulation component 20 are in contact with each other, there is no channel for gas flow between the second heat dissipation hole 32 and the second through hole 52, and there is no overlapping area between the first heat dissipation hole 31 and the first through hole 51. At this time, the insulation tube is in a closed state, which is conducive to the formation of the process conditions required for work inside the crucible body 10.
[0047] When the temperature inside the crucible body 10 needs to be adjusted by heat dissipation during the heating process, the lifting device 60 drives the heat preservation cover 40 to move upward, and a cavity is formed between the top plate of the heat preservation cover 40 and the top surface of the heat preservation member 20, and the cavity can be connected to the second heat dissipation hole 32 and the second through hole 52, so as to form a heat dissipation channel, and the top plate of the heat preservation cover 40 and the top surface of the heat preservation member 20 are in contact with each other, and there is no channel for gas flow between the second heat dissipation hole 32 and the second through hole 52. By rising the liftable heat preservation cover 40, a cavity is cleverly formed between the top plate of the heat preservation cover 40 and the top surface of the heat preservation member 20, and the heat dissipation capacity is adjusted by the size of the cavity, so that the heat dissipation adjustment of the upper parts of multiple crucibles is realized, which is beneficial to control the temperature of the upper parts of multiple crucibles, and is beneficial to simply and quickly adjust online to form a stable temperature gradient with high temperature at the bottom and low temperature at the top required for the growth of silicon carbide crystals in the crucible. Heat dissipation is performed on the upper regions of multiple crucibles, which is beneficial to uniform temperature of the upper regions of the crucibles and can reduce the radial temperature gradient of the upper regions of the crucibles; and when the lifting device 60 drives the heat preservation cover 40 to move upward, the side plate of the heat preservation cover 40 moves up, so that the first heat dissipation hole 31 and the first through hole 51 overlap, thereby forming a heat dissipation channel with online adjustable heat dissipation on the side of the upper portion of the crucible, and heat dissipation adjustment of the upper portions of multiple crucibles can also be achieved, which is beneficial to controlling the temperature of the upper portions of multiple crucibles, and is beneficial to simple and rapid online adjustment to form a stable temperature gradient with high temperature in the lower portion and low temperature in the upper portion required for the growth of silicon carbide crystals in the crucible, and heat dissipation is performed on the upper regions of multiple crucibles from one side of the crucible, which is beneficial to uniform temperature of the upper regions of the crucible and can reduce the radial temperature gradient of the upper portion of the crucible; by adjusting the above-mentioned heat dissipation channel, the heat dissipation capacity is adjusted, thereby achieving temperature adjustment of the inside of the crucible body 10.
[0048] In this embodiment, the crucible device 1000 further includes a heater 90 . The heater 90 is disposed at the bottom of the crucible body 10 . The heater 90 is used to heat the raw material at the bottom of the crucible body 10 .
[0049] The crucible device 1000 in the prior art can only install one crucible body 10 at a time, that is, only one silicon carbide single crystal can be grown at a time, so the production efficiency of the crucible device 1000 in the prior art is low. In order to improve the production efficiency of the crucible device 1000, the crucible device 1000 in this embodiment also includes a crucible cover 70, which is arranged inside the heat preservation part 20, and the crucible cover 70 is installed on the crucible body 10. The crucible cover 70 has at least two crystal growth chambers 80, each of which is provided with a crystal, and at least two crystal growth chambers 80 are connected to the crucible body 10. Among them, at least two crystal growth chambers 80 are connected to the crucible body 10. After the crucible body 10 is heated, the raw materials at the bottom of the crucible body 10 can react with the crystals in at least two crystal growth chambers 80 at the same time, and the materials are fed in a centralized manner, so as to grow at least two silicon carbide single crystals at one time.
[0050] In this embodiment, there are seven crystal growth chambers 80, and the seven crystal growth chambers 80 are arranged at intervals. In other embodiments, the number of crystal growth chambers 80 may be increased or decreased, which is not specifically limited here.
[0051] Please refer to Figure 3 A crystal growth chamber 80 is provided at the center point of the crucible body 10 , and the remaining plurality of crystal growth chambers 80 are arranged outside the crystal growth chamber 80 at the center point along the circumferential direction.
[0052] Furthermore, the crucible equipment 1000 also includes an insulation plate 100, which is arranged on the crucible cover 70, and the two ends of the insulation plate 100 are respectively abutted against the insulation component 20, thereby separating the upper and lower parts of the crucible body 10, reducing the thermal influence of the heating body in the lower part of the crucible body 10 on the upper part of the crucible body 10, which is beneficial to the formation of a temperature gradient inside the crucible body 10, ensuring the stability of crystal growth, and improving the crystal quality.
[0053] It can be understood that the heat insulation board 100 is provided with a plurality of mounting holes, and a crystal growth chamber 80 is sleeved in each mounting hole.
[0054] In this embodiment, the crucible equipment 1000 also includes a rotating device 120, which is connected to the bottom of the crucible body 10. The rotating device 120 is used to drive the crucible body 10 to rotate so that the raw materials at the bottom of the crucible body 10 can be heated evenly, ensuring the stability of crystal growth and improving the crystal quality.
[0055] The embodiment of the present invention further provides a method for using the crucible device 1000. The method for using the crucible device 1000 includes:
[0056] S1: the rotating device 120 drives the crucible body 10 to rotate, and the heater 90 heats the bottom of the crucible body 10 .
[0057] Specifically, the rotating device 120 drives the crucible body 10 to rotate, so that the heater 90 can evenly heat the raw material at the bottom of the crucible body 10. The heated raw material sublimates and reacts with the crystals in the three crystal growth chambers 80 at the same time, thereby growing silicon carbide single crystals.
[0058] S2: The lifting device 60 drives the heat-insulating cover 40 to move upward, thereby moving the position of the first through hole 51 in the vertical direction, so that the first through hole 51 and the first heat dissipation hole 31 overlap, thereby forming a heat dissipation channel together.
[0059] S3: After the heat preservation cover 40 moves upward, a cavity is formed between the heat preservation cover 40 and the heat preservation member 20, and the cavity is connected to the second heat dissipation hole 32 and the second through hole 52 at the same time, thereby forming a heat dissipation channel together.
[0060] In summary, an embodiment of the present invention provides a crucible device 1000 and a method of use, wherein the crucible device 1000 includes a crucible body 10, a heat-insulating component 20, a heat-insulating cover 40 and a lifting device 60, wherein the heat-insulating component 20 covers the outside of the crucible body 10, wherein the heat-insulating component 20 is provided with a heat-dissipating hole 30, and the heat-insulating cover 40 can be movably arranged on the outside of the heat-insulating component 20, and the heat-insulating cover 40 is provided with a through hole 50, and the through hole 50 and the heat-dissipating hole 30 cooperate to jointly form a heat-dissipating channel, and the lifting device 60 is connected to the heat-insulating cover 40, and the lifting device 60 is used to drive the heat-insulating cover 40 to perform a lifting movement, thereby adjusting the overlapping area of the through hole 50 and the heat-dissipating hole 30 in the vertical direction, and then adjusting the heat-dissipating channel. When in use, the outside of the crucible body 10 is covered with a heat preservation member 20, and a heat preservation cover 40 is movably provided on the outside of the heat preservation member 20. The heat preservation member 20 is provided with a heat dissipation hole 30, and the heat preservation cover 40 is provided with a through hole 50. The through hole 50 can cooperate with the heat dissipation hole 30 to form a heat dissipation channel. During the heating process, in order to ensure the temperature gradient inside the crucible body 10, the lifting device 60 can drive the heat preservation cover 40 to move up and down, thereby adjusting the overlapping area of the through hole 50 and the heat dissipation hole 30 in the vertical direction, so as to achieve the purpose of adjusting the size of the heat dissipation channel, thereby accurately controlling the temperature in the crucible, improving the heat dissipation effect, ensuring the stability of crystal growth, and improving the quality of the crystal.
[0061] The method for using the crucible device 1000 uses the crucible device 1000 to work, and the method for using the crucible device 1000 includes: the rotating device 120 drives the crucible body 10 to rotate, and the heater 90 heats toward the bottom of the crucible body 10; the lifting device 60 drives the heat preservation cover 40 to move up, thereby moving the position of the first through hole 51 in the vertical direction, so that the first through hole 51 and the first heat dissipation hole 31 overlap, thereby forming a heat dissipation channel together; after the heat preservation cover 40 moves up, a cavity is formed between the heat preservation cover 40 and the heat preservation part 20, and the cavity is connected to the second heat dissipation hole 32 and the second through hole 52 at the same time, thereby forming a heat dissipation channel together. The method for using the crucible device 1000 can accurately control the temperature in the crucible, improve the heat dissipation effect, ensure the stability of crystal growth, and improve the quality of crystals.
[0062] The above is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any changes or substitutions that can be easily thought of by a person skilled in the art within the technical scope disclosed by the present invention should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention should be based on the protection scope of the claims.
Claims
1. A crucible device, characterized in that: include: Crucible body (10); A heat-insulating component (20), the heat-insulating component (20) covering the outside of the crucible body (10), wherein the heat-insulating component (20) is provided with heat-dissipating holes (30); A heat-insulating cover (40), the heat-insulating cover (40) being movably arranged outside the heat-insulating component (20), the heat-insulating cover (40) being provided with a through hole (50), the through hole (50) and the heat-dissipating hole (30) cooperating to form a heat-dissipating channel; a lifting device (60), the lifting device (60) being connected to the heat-insulating cover (40), the lifting device (60) being used to drive the heat-insulating cover (40) to perform lifting movement, thereby adjusting the overlapping area and distance between the through hole (50) and the heat-dissipating hole (30) in the vertical direction, thereby adjusting the heat-dissipating channel; The heat dissipation holes (30) include first heat dissipation holes (31), the first heat dissipation holes (31) penetrate the heat insulation component (20) in a horizontal direction, the through holes (50) include first through holes (51), the first through holes (51) penetrate the heat insulation cover (40) in a horizontal direction, and when the heat insulation cover (40) follows the lifting device (60) to perform lifting movement, the first through holes (51) cooperate with the first heat dissipation holes (31); The heat dissipation hole (30) further comprises a second heat dissipation hole (32), the second heat dissipation hole (32) vertically penetrating the thermal insulation component (20), the through hole (50) further comprises a second through hole (52), the second through hole (52) vertically penetrating the thermal insulation cover (40), the thermal insulation cover (40) being used to form a cavity between the thermal insulation cover (40) and the thermal insulation component (20) when the thermal insulation cover (40) is moved upward, and the cavity is simultaneously connected to the second heat dissipation hole (32) and the second through hole (52).
2. The crucible device according to claim 1, characterized in that: The crucible device (1000) further comprises a crucible cover (70), wherein the crucible cover (70) is arranged inside the heat-insulating component (20), and the crucible cover (70) is mounted on the crucible body (10), and the crucible cover (70) has at least two crystal growth chambers (80), each of the crystal growth chambers (80) is provided with a crystal, and at least two of the crystal growth chambers (80) are connected to the crucible body (10).
3. The crucible device according to claim 2, characterized in that: The crucible device (1000) further comprises a heater (90), wherein the heater (90) is arranged at the bottom of the crucible body (10), and the heater (90) is used to heat the raw material at the bottom of the crucible body (10).
4. The crucible device according to claim 3, characterized in that The crucible device (1000) further comprises a heat insulation plate (100), wherein the heat insulation plate (100) is arranged on the crucible cover (70), and both ends of the heat insulation plate (100) are respectively in contact with the heat insulation component (20), thereby separating the upper part and the lower part of the crucible body (10).
5. The crucible device according to claim 4, characterized in that The heat insulation board (100) is provided with a plurality of mounting holes, and the crystal growth chamber (80) is sleeved in each mounting hole.
6. The crucible device according to claim 1, characterized in that: The crucible device (1000) further comprises a rotating device (120), wherein the rotating device (120) is connected to the bottom of the crucible body (10), and the rotating device (120) is used to drive the crucible body (10) to rotate.
7. The crucible device according to claim 1, characterized in that: The heat-insulating component (20) is a cylindrical structure.
8. A method for using a crucible device, characterized in that: Working with the crucible device according to any one of claims 1 to 7, the method for using the crucible device comprising: The rotating device (120) drives the crucible body (10) to rotate, and the heater (90) heats the bottom of the crucible body (10); The lifting device (60) drives the heat-insulating cover (40) to move upward, thereby moving the position of the first through hole (51) in the vertical direction, so that the first through hole (51) and the first heat dissipation hole (31) overlap, thereby jointly forming a heat dissipation channel; After the heat-insulating cover (40) moves upward, a cavity is formed between the heat-insulating cover (40) and the heat-insulating component (20), and the cavity is simultaneously connected to the second heat-dissipating hole (32) and the second through hole (52), thereby jointly forming a heat-dissipating channel.