Glue fixing device and glue fixing method

Abstract

The present invention provides a glue-fixing device and a glue-fixing method, and relates to the field of semiconductor technology. The glue-fixing device includes a base, a temperature adjustment component, a purge component, and an ultraviolet mechanism; the temperature adjustment component includes a carrier plate, a heating element, and a cooling structure, the carrier plate is arranged on the base, the upper end surface of the carrier plate is a wafer bearing surface, the heating element and the cooling structure are arranged on the carrier plate, and are used to adjust the temperature of the wafer bearing surface; the purge component is installed on the base, and is used to purge the wafer bearing surface; the ultraviolet mechanism is provided with a light emitter and a reflector, the light emitter can emit ultraviolet light, and the reflector can reflect the ultraviolet light emitted by the light emitter to the wafer bearing surface. The glue-fixing device and the glue-fixing method can improve product yield and production efficiency.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a glue fixing device and a glue fixing method. Background Art

[0002] Photoresist, also known as photoresist, refers to a thin film material that changes its solubility through irradiation or radiation of ultraviolet light, electron beam, ion beam, X-ray, etc. It is often used as an anti-corrosion coating material in the photolithography process. When applying photoresist, the nozzle sprays the photoresist solution onto the surface of the wafer, and then rotates the wafer. The photoresist rotates with the centrifugal force and moves toward the periphery of the wafer until it covers the surface of the wafer, forming a layer of a certain thickness.

[0003] The existing method is to cure the photoresist on the wafer surface by UV lamp or linear scanning, so that the photoresist undergoes cross-linking reaction to obtain the required image on the wafer surface for subsequent photolithography process. Some semiconductor devices, such as filters, also use the stacking process in their manufacturing process. Linear scanning will cause sol phenomenon and black spot problems, thus affecting product yield and production efficiency. Summary of the invention

[0004] The object of the present invention is to provide a glue fixing device and a glue fixing method, which can improve product yield and production efficiency.

[0005] To achieve this object, the present invention adopts the following technical solutions:

[0006] The glue fixing device comprises:

[0007] Base;

[0008] A temperature regulating assembly, comprising a carrier plate, a heating element and a cooling structure, wherein the carrier plate is arranged on the base, the upper end surface of the carrier plate is the wafer carrying surface, and the heating element and the cooling structure are arranged on the carrier plate to regulate the temperature of the wafer carrying surface;

[0009] A purge assembly, disposed on the base, for purging the wafer carrying surface;

[0010] The ultraviolet mechanism is provided with a light emitting body and a reflective member, wherein the light emitting body can emit ultraviolet light, and the reflective member can reflect the ultraviolet light emitted by the light emitting body to the wafer carrying surface.

[0011] As a further technical solution, the purge assembly includes a purge piece and a connecting pipe, a purge chamber is provided in the purge piece, a plurality of purge holes are arranged at intervals on the side wall of the purge chamber and are arranged toward the temperature adjustment assembly, and the purge chamber is connected to an external air source through the connecting pipe.

[0012] As a further technical solution, the purge member is arranged on one side of the temperature adjustment component, and a center line connecting the plurality of purge holes is higher than the wafer carrying surface.

[0013] As a further technical solution, a temperature regulating cavity is arranged in the carrier plate, and a liquid inlet and a liquid outlet connected to the temperature regulating cavity are arranged on the carrier plate. The temperature regulating cavity cooperates with the liquid inlet and the liquid outlet to form the cooling structure, and the heating element is arranged on the lower end surface of the carrier plate.

[0014] As a further technical solution, the temperature regulating assembly further includes a heat insulating member, and the heat insulating member is disposed on a side of the carrier plate away from the ultraviolet mechanism.

[0015] As a further technical solution, the reflector comprises a reflective lampshade in a semicircular shell, and the opening of the reflective lampshade is arranged toward the wafer carrying surface;

[0016] The light emitting body is located in the reflective lampshade, and along the height direction, the axis of the reflective lampshade is concentrically arranged with the axis of the light emitting body.

[0017] As a further technical solution, the base is provided with an open storage cavity, the opening of the storage cavity is arranged upward, the temperature adjustment component and the purge component are both arranged in the storage cavity, and the reflective lampshade is arranged at the open end of the storage cavity.

[0018] The glue solidification method, applied to the glue solidification device, comprises the following steps:

[0019] Pretreatment: starting the temperature adjustment component to enter a heating state, raising the temperature of the wafer carrying surface to a first preset temperature;

[0020] The light emitter is in the first state, a wafer to be processed is placed on the wafer carrying surface, a purge assembly is started, and the temperature of the wafer carrying surface is maintained at the first preset temperature for T1 seconds;

[0021] The light emitter is in the second state and enters the first working mode, and is heated by the temperature regulating component, and the temperature of the wafer carrying surface is raised to the second preset temperature after T2 seconds;

[0022] The light emitter enters the second working mode, and the temperature regulating component continues to heat, and after T3 seconds, the temperature of the wafer carrying surface is raised to a third preset temperature;

[0023] The light emitter is in the first state again, and the temperature of the wafer carrying surface is maintained at the third preset temperature for T4 seconds, and then the purge assembly is turned off;

[0024] Post-processing: controlling the temperature regulating component to switch from the heating state to the cooling state to cool the wafer carrying surface.

[0025] As a further technical solution, the operating time of the light-emitting body is equal to the sum of T1, T2, T3 and T4.

[0026] As a further technical solution, the temperature rise rate of the temperature adjustment component is set to 1°C / min~1.5°C / min.

[0027] As a further technical solution, the first preset temperature, the second preset temperature, and the third preset temperature are gradually increased, and the highest preset temperature of the wafer carrying surface does not exceed 120°C.

[0028] Compared with the prior art, the glue fixing device and glue fixing method provided by the embodiment of the present invention have the following technical advantages:

[0029] 1. Since the temperature on the wafer carrying surface can be adjusted by the temperature regulating component, when the wafer to be processed is placed on the wafer carrying surface with a certain temperature, the curing treatment of the wafer to be processed can be started. The wafer to be processed is first baked by the wafer carrying surface, and then the UV mechanism is used to irradiate the light to solidify the glue, and the temperature regulating component is heated to gradually increase the temperature of the wafer carrying surface, thereby increasing the curing speed of the colloid on the wafer to be processed; when the curing of the wafer to be processed on the wafer carrying surface is completed, the temperature regulating component enters a cooling state, and at the same time, the wafer carrying surface and the wafer on which the curing treatment has been completed are cooled, which can not only further enhance the curing effect of the colloid, but also facilitate the removal of the wafer that has completed the curing of the glue from the wafer carrying surface, so as to carry out the curing treatment of the next wafer to be processed, thereby improving the overall production efficiency.

[0030] 2. Since a purge mechanism is also provided on the base to match the temperature adjustment component, when the wafer to be processed is solidified on the wafer carrying surface, the purge mechanism can continuously purge the wafer carrying surface, thereby blowing away impurities on the wafer surface to avoid the appearance of black spots on the wafer surface during the colloid solidification process, thereby improving the product yield. In addition, since the ultraviolet light emitted by the luminous body can be reflected to the wafer carrying surface by the reflector, the point light source is changed into a surface light source, which can ensure the range and uniformity of ultraviolet light irradiation to the wafer to be processed on the wafer carrying surface, thereby avoiding the sol phenomenon on the wafer surface during the solidification process, so as to further improve the product yield and production efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 is a cross-sectional view of a glue fixing device provided by an embodiment of the present invention;

[0032] Figure 2 yes Figure 1 A partial enlarged view of the middle A;

[0033] Figure 3 yes Figure 1 A partial enlarged view of point B in the middle;

[0034] Figure 4 is a partial structural cross-sectional view of a glue fixing device provided in an embodiment of the present invention;

[0035] Figure 5 is a cross-sectional view of a temperature regulating component in a glue-fixing device provided in an embodiment of the present invention;

[0036] Figure 6 It is a schematic diagram of the structure of the glue fixing device provided in an embodiment of the present invention.

[0037] In the figure:

[0038] 100, base;

[0039] 200, temperature adjustment component; 210, carrier plate; 220, heating element; 231, liquid inlet; 232, liquid outlet; 240, heat insulation element;

[0040] 300, purge member; 310, purge hole;

[0041] 400, ultraviolet mechanism; 411, light emitting body; 412, waveguide; 413, mounting shell; 421, reflector; 422, lampshade shell; 423, light-transmitting plate; 424, first limiting member; 425, second limiting member; 426, positioning member. DETAILED DESCRIPTION

[0042] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It is to be understood that the specific embodiments described herein are only used to explain the present invention, rather than to limit the present invention. It should also be noted that, for ease of description, only parts related to the present invention, rather than all structures, are shown in the accompanying drawings.

[0043] In the description of the present invention, unless otherwise clearly specified and limited, the terms "connected", "connected", and "fixed" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0044] In the present invention, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being "above", "above" and "above" a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being "below", "below" and "below" a second feature includes that the first feature is directly below and obliquely below the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0045] In the description of this embodiment, the terms "upper", "lower", "right", etc., directions or positional relationships are based on the directions or positional relationships shown in the drawings, and are only for the convenience of description and simplification of operation, rather than indicating or implying that the device or element referred to must have a specific direction, be constructed and operated in a specific direction, and therefore cannot be understood as limiting the present invention. In addition, the terms "first" and "second" are only used to distinguish in the description and have no special meaning.

[0046] Combination Figures 1 to 6 As shown, the glue-fixing device provided in this embodiment is used to improve product yield and production efficiency. Specifically, the glue-fixing device includes a base 100, a temperature adjustment component 200, a purge component and an ultraviolet mechanism 400; the temperature adjustment component 200 is arranged on the base 100, and a wafer carrying surface is arranged in the temperature adjustment component 200, and the temperature adjustment component 200 has a heating state or a cooling state to adjust the temperature of the wafer carrying surface; the purge component is arranged on the base 100, and is used to purge the wafer carrying surface; the ultraviolet mechanism 400 is provided with a light-emitting body 411 and a reflector 421, the light-emitting body 411 can emit ultraviolet light, and the reflector 421 can reflect the ultraviolet light emitted by the light-emitting body 411 to the wafer carrying surface.

[0047] Since the temperature on the wafer carrying surface can be adjusted by the temperature regulating component 200, when the wafer to be processed is placed on the wafer carrying surface with a certain temperature, the curing treatment of the wafer to be processed can be started. The wafer to be processed is first baked by the wafer carrying surface, and then the UV mechanism 400 is used to irradiate the light to solidify the glue, and the temperature regulating component 200 is used for heating, so as to gradually increase the temperature of the wafer carrying surface, thereby increasing the curing speed of the colloid on the wafer to be processed; when the curing of the wafer to be processed on the wafer carrying surface is completed, the temperature regulating component 200 enters a cooling state, and at the same time cools down the wafer carrying surface and the wafer placed thereon that has completed the curing treatment, which can not only further enhance the curing effect of the colloid, but also facilitate the removal of the wafer that has completed the curing treatment from the wafer carrying surface, so as to carry out the curing treatment of the next wafer to be processed, thereby improving the overall production efficiency.

[0048] Since a purge mechanism is also provided on the base to match the temperature adjustment component 200, when the wafer to be processed is solidified on the wafer support surface, the purge mechanism can continuously purge the wafer support surface, thereby blowing away impurities on the wafer surface to avoid the appearance of black spots on the wafer surface during the colloid solidification process, thereby improving the product yield. In addition, since the ultraviolet light emitted by the light source 411 can be reflected to the wafer support surface by the reflector 421, the point light source is changed into a surface light source, which can ensure the range and uniformity of ultraviolet light irradiation to the wafer to be processed on the wafer support surface, thereby avoiding the sol phenomenon on the wafer surface during the solidification process, so as to further improve the product yield and production efficiency.

[0049] Furthermore, the purge assembly includes a purge member 300 and a connecting pipe, a purge chamber is provided in the purge member 300, and a plurality of purge holes 310 arranged toward the temperature adjustment member 200 are arranged at intervals on the side wall of the purge chamber, and the purge chamber is connected to an external gas source through a connecting pipe. The purge assembly is arranged on one side of the temperature adjustment member 200 to avoid affecting the purge effect of impurities on the surface of the wafer due to the opposite blowing of the plurality of purge holes 310. The purge member 300 is arranged in a long strip shape, and the plurality of purge holes 310 are evenly spaced along the length direction of the purge member 300, so as to ensure the uniformity of the airflow reaching various locations on the surface of the wafer during the purge process. The external gas source can deliver inert gases such as helium and argon to the purge chamber, or can deliver chemically inactive gases such as nitrogen. In this embodiment, nitrogen is used as the purge gas to avoid reaction with other substances, thereby ensuring the purge effect and reducing production costs.

[0050] The purge member 300 is disposed on one side of the temperature adjustment component 200 , and the center line of the plurality of purge holes 310 is higher than the wafer carrying surface, thereby ensuring the purge effect and avoiding interference between the purge member 300 and the ultraviolet mechanism 400 .

[0051] The base 100 is provided with an open storage cavity, the opening of which is upwardly disposed, the temperature adjustment component 200 and the purge component are both disposed in the storage cavity, and the storage cavity protects the temperature adjustment component 200 and the purge component, ensuring the purge effect while preventing external components from causing damage to the temperature adjustment component 200 and the purge component. The ultraviolet mechanism 400 is disposed at the open end of the storage cavity, ensuring that the ultraviolet light reflected by the reflector 421 can be fully irradiated into the storage cavity, thereby ensuring the irradiation intensity of the ultraviolet light on the current wafer bearing surface, so as to further improve the curing effect.

[0052] Preferably, the temperature regulating assembly 200 includes a carrier plate 210, a heating element 220 and a cooling structure. The carrier plate 210 is arranged in the storage cavity. The upper end surface of the carrier plate 210 is a wafer bearing surface for bearing the wafer to be processed. The heating element 220 and the cooling structure are arranged on the carrier plate 210. The operation of the heating element 220 causes the carrier plate 210 to enter a heating state to complete the solidification of the wafer to be processed on the wafer bearing surface; the cooling structure causes the carrier plate 210 to enter a cooling state to complete the cooling of the wafer that has been subjected to the solid glue treatment, so that the wafer that has been subjected to the solid glue treatment can be removed from the wafer bearing surface as soon as possible. The heating element 220 can select any component with heating effect and temperature control effect, which will not be described in detail here.

[0053] Specifically, a temperature regulating chamber is provided in the carrier plate 210, and a liquid inlet 231 and a liquid outlet 232 connected to the temperature regulating chamber are provided on the carrier plate 210. The temperature regulating chamber cooperates with the liquid inlet 231 and the liquid outlet 232 to form a cooling structure, and the heating element 220 is provided on the lower end surface of the carrier plate 210. The temperature regulating chamber is provided corresponding to the wafer bearing surface. When it is necessary to cool down the wafer that has been subjected to the solid glue treatment, the coolant is injected into the temperature regulating chamber from the liquid inlet 231 to achieve the purpose of rapid cooling; when the wafer is cooled and the solid glued wafer is removed from the wafer bearing surface, the coolant in the temperature regulating chamber is discharged from the liquid outlet 232, so that the heating element 220 can heat the carrier plate 210 again and perform the solid glue treatment on the next wafer to be processed. The heating element 220 is provided on the lower end surface of the carrier plate 210 to ensure its heating effect while avoiding interference with the cooling structure. Preferably, cooling water can be used as the coolant to ensure the cooling effect while reducing the production cost. In addition, a liquid storage part (not shown in the figure) and a liquid adding pump (not shown in the figure) can be provided between the liquid inlet 231 and the liquid outlet 232, and the coolant discharged from the liquid outlet 232 is stored in the liquid storage part for natural cooling. When the carrier plate 210 needs to be cooled, the liquid adding pump will again pour the coolant in the liquid storage part into the temperature adjustment chamber from the liquid inlet 231 to realize the recycling of the coolant, thereby further reducing the production cost.

[0054] In some other embodiments, the cooling structure can also be set as an independent component; specifically, the cooling component includes an evaporator and a condenser, the evaporator is fixedly arranged between the heating element 220 and the carrier plate 210, the evaporator and the condenser are interconnected and can both accommodate cooling medium, and the condenser is arranged above the evaporator, and a valve is arranged between the evaporator and the condenser; when it is necessary to cool the wafer that has been solid-bonded, the valve is opened, at this time the cooling medium in the evaporator evaporates into gas and diffuses into the condenser, after the gaseous cooling medium is condensed into liquid in the condenser, it flows back into the evaporator under the action of its own gravity to cool the wafer carrier surface; when the wafer is cooled and cooled and the solid-bonded wafer is removed from the wafer carrier surface, the valve is closed to prevent the evaporation and condensation process from occurring, thereby facilitating the heating element 220 to heat the carrier plate 210 again and perform solid-bonding treatment on the next wafer to be processed. Alternatively, in order to further improve the cooling effect, an air cooling component is provided corresponding to the condenser, and the air outlet of the air cooling component is provided toward the condenser; when the valve is opened, the air cooling component operates synchronously to enhance the air flow around the condenser, so that more air flows through the condenser, thereby increasing the speed at which the gas cooling medium is condensed in the condenser, so as to ensure the cooling effect on the wafer bearing surface. Alternatively, only an independent evaporator is provided, and when it is necessary to cool the wafer that has been solidified, the purpose of cooling is achieved by continuously injecting condensing medium into the evaporator. After the wafer is cooled and the solidified wafer is removed from the wafer bearing surface, the condensing medium in the evaporator is discharged, so that the heating element 220 can heat the bearing plate 210 again.

[0055] In addition to setting the cooling structure as the above-mentioned liquid cooling structure, the cooling structure can also be directly set as an air-cooling cooling structure, that is, a cold fan is set corresponding to the carrier plate 210, and the cold fan directly blows air toward the carrier plate 210 to cool down the wafer that has been subjected to the solid glue treatment.

[0056] Preferably, the temperature adjustment assembly 200 further includes a heat insulating member 240, which is disposed on the side of the carrier plate 210 away from the UV mechanism 400. During the operation of the heating member 220, the heat insulating member 240 can reduce the amount of heat from the heating member 220 diffusing to the bottom of the storage cavity, thereby enhancing the heating effect on the carrier plate 210 and increasing the heating rate of the carrier plate 210.

[0057] In addition, in this embodiment, wafers to be processed of different specifications can be placed on the wafer carrying surface to complete the adhesive bonding process for the wafers to be processed of different specifications.

[0058] Preferably, the UV mechanism 400 also includes a lampshade shell 422, and the reflective member 421 is configured as a reflective lampshade in a semicircular shell, and the opening of the reflective lampshade is configured toward the wafer supporting surface; the light-emitting body 411 is located in the reflective lampshade to improve the reflectivity and reflection effect of the ultraviolet light emitted by the light-emitting body 411, thereby further improving the glue solidification efficiency.

[0059] According to actual needs, the reflective lampshade can be set as a rectangular shell, a polyhedral shell, a semicircular shell or a semi-elliptical shell. In the present embodiment, the reflective lampshade is set as a semicircular shell, and along the height direction, the axis of the reflective lampshade is concentrically arranged with the axis of the light-emitting body 411. The open end of the reflective lampshade is set at the open end of the storage cavity; in this way, when the light-emitting body 411 is working, the ultraviolet light emitted will diverge along the radial direction of the reflective lampshade until it diverges to the inner wall of the reflective lampshade and then is reflected toward the open end of the reflective lampshade, so that the entire wafer bearing surface is within the irradiation area of ​​the reflected ultraviolet light, thereby ensuring the colloid curing effect on the wafer to be processed on the wafer bearing surface, and further improving the curing efficiency.

[0060] As a further technical solution, the UV mechanism 400 also includes a microwave component and a lampshade shell 422. The reflective lampshade is arranged in the lampshade shell 422. The lampshade shell 422 provides support and protection for the reflective lampshade, ensures the reflective effect of the reflective lampshade, and prevents external components from causing damage to the reflective lampshade.

[0061] The light source 411 is a mercury lamp, and the microwave component is connected to the lamp housing 422 corresponding to the mercury lamp, and the microwave component can emit microwaves to excite the mercury lamp to emit ultraviolet light of a corresponding wavelength band.

[0062] Specifically, the microwave assembly includes a power supply, a magnetron and a waveguide 412, and the waveguide 412 is connected to the reflective lampshade; the power supply is used to excite the magnetron to generate microwaves, and the microwaves are guided to the mercury lamp through the waveguide 412, so that the mercury lamp emits ultraviolet light, and the ultraviolet light is reflected through the reflective lampshade toward the wafer carrying surface, thereby achieving the purpose of performing solid glue treatment on the wafer to be processed on the wafer carrying surface.

[0063] In addition, in this embodiment, the side of the lampshade housing 422 away from the base 100 is connected to the mounting housing 413, the mounting housing 413 is connected to the reflective lampshade, and the mercury lamp is mounted on the mounting housing 413 and extends into the reflective lampshade, which ensures the curing effect of the colloid while reducing the volume of the reflective lampshade to ensure the reflection effect. The mounting housing 413 and the lampshade housing 422 can be set to be fixedly connected, or can be set to be detachably connected, or integrally formed. At the same time, a plurality of waveguides 412 are provided, and the plurality of waveguides 412 are arranged at intervals along the circumference of the mounting housing 413, and are all connected to the inside of the reflective lampshade through the mounting housing 413. The plurality of waveguides 412 can be arranged to dock with the same magnetron, or can be arranged to dock with a plurality of magnetrons in a one-to-one correspondence with a plurality of waveguides 412. Since a plurality of waveguides 412 connected to the inside of the reflective lampshade are provided, microwaves can excite the mercury lamp from different directions to ensure that the mercury lamp emits ultraviolet light of a specific wavelength to meet the requirements of wafer curing.

[0064] Preferably, the UV mechanism 400 further includes a light-transmitting plate 423, which is disposed at the open end of the reflective lampshade to form a closed space inside the reflective lampshade.

[0065] When the mercury lamp is excited to emit ultraviolet light, oxygen molecules in the environment can absorb part of the ultraviolet light and be excited to become ozone with a pungent smell. A light-transmitting plate 423 is set at the open end of the reflective lampshade. First, it can ensure that the reflected ultraviolet light can pass through the light-transmitting plate 423 to reach the wafer carrying surface to complete the colloid solidification of the wafer to be processed on the wafer carrying surface; secondly, the enclosed space can avoid air flow, so at the initial stage of the static elimination device, the oxygen molecules in the enclosed space absorb the ultraviolet light to the upper limit, so that the oxygen molecules can reduce the absorption of ultraviolet light in the later stage of the work, thereby further improving the curing speed; finally, ozone has a pungent smell, and the light-transmitting plate 423 can prevent ozone from volatilizing to the outside of the ultraviolet mechanism 400, thereby improving the cleanliness of the working environment.

[0066] Furthermore, the ultraviolet mechanism 400 also includes a ring-shaped limiting component, which is arranged at the open end of the lampshade shell 422 and cooperates with the open end of the lampshade shell 422 to form a first limiting groove, the lower edge of the reflective lampshade is connected to the first limiting groove, the inner side of the limiting component has a second limiting groove, and the peripheral limit of the light-transmitting plate 423 is connected to the second limiting groove.

[0067] Specifically, the limiting assembly includes a first limiting member 424 and a second limiting member 425. The first limiting member 424 is arranged at the open end of the lampshade shell 422, and cooperates with the open end of the lampshade shell 422 to form a first limiting groove (not shown in the figure). A first limiting skirt (not shown in the figure) is arranged on the side of the reflective lampshade close to the open end of the lampshade shell 422. The first limiting groove and the first limiting skirt both extend in a ring shape along the circumference of the lampshade shell 422, and the first limiting skirt is limitedly connected to the first limiting groove; a mounting through hole is arranged at the bottom of the lampshade shell 422 corresponding to the mounting shell 413, and a ring-shaped positioning member 426 is arranged on the inner side of the mounting through hole, and an mounting annular channel is formed between the outer wall of the positioning member 426 and the inner wall of the mounting through hole, and a second limiting skirt (not shown in the figure) is arranged corresponding to the mounting through hole of the reflective lampshade, and the second limiting skirt extends in a ring shape along the circumference of the mounting through hole, and the second limiting skirt is inserted in the mounting annular channel. The second limiting skirt cooperates with the first limiting skirt to fix the reflective lampshade in the lampshade housing 422 , thereby improving the connection strength and connection stability of the reflective lampshade when connected to the lampshade housing 422 .

[0068] The second stopper 425 is arranged on the side of the first stopper 424 away from the lampshade housing 422, and cooperates with the first stopper 424 to form a second stopper groove, and the light-transmitting plate 423 is connected to the second stopper groove. The light-transmitting plate 423 is arranged to be circular at the opening end corresponding to the reflective lampshade, and is fixedly connected to the lampshade housing 422 through the first stopper 424, which improves the connection strength and ensures the sealing effect of the reflective lampshade.

[0069] In addition, a sealing member is provided between the second stopper 425 and the open end of the storage cavity, and the sealing member is used to improve the sealing between the UV mechanism 400 and the open end of the storage cavity, to ensure that the reflected UV light can all reach the wafer bearing surface, and to prevent the UV light from dissipating between the UV mechanism 400 and the base 100. In this embodiment, the sealing member is provided on the end face of the second stopper 425 close to the base 100, and the sealing member extends in a ring shape along the circumference of the reflective lampshade. When the UV mechanism 400 is provided on the base 100, the outer wall of the sealing member abuts against the inner wall of the open end of the storage cavity. In other embodiments, the sealing member can be directly provided as a sealing ring, a sealing strip, etc.

[0070] The glue solidification method is applied to a glue solidification device and comprises the following steps.

[0071] Pretreatment: Start the temperature adjustment component 200 to enter the heating state, and raise the temperature of the wafer carrying surface from room temperature to a first preset temperature. The first preset temperature is 75-100°C, for example, it can be 78°C, 80°C, 83°C, 85°C, 86°C, 90°C, 91°C, 94°C, 95.2°C, 96.7°C, etc.

[0072] The light emitting body 411 is in the first state, the wafer to be processed is placed on the wafer carrying surface, the purge assembly is started, and the temperature of the wafer carrying surface is maintained at a first preset temperature for T1 seconds.

[0073] The light emitting body 411 is in the second state and enters the first working mode. The temperature of the wafer carrying surface is heated by the temperature regulating component 200 and is increased to the second preset temperature after T2 seconds.

[0074] The light-emitting body 411 enters the second working mode, and the temperature regulating component 200 continues to heat, and after T3 seconds, the temperature of the wafer carrying surface is increased to the third preset temperature.

[0075] The light emitter 411 is in the first state again and keeps the temperature of the wafer carrying surface at the third preset temperature for T4 seconds, and then the purge assembly is turned off.

[0076] Post-processing: Control the temperature regulating component 200 to switch from the heating state to the cooling state to cool the wafer carrying surface. The temperature can be lowered to the first preset temperature to perform solid glue treatment on the next wafer to be processed, thereby improving production efficiency and saving energy consumption. The temperature can also be lowered to room temperature to complete batch production.

[0077] Furthermore, the operation time of the light emitting body 411 is equal to the sum of T1, T2, T3 and T4, that is, the time for the solid glue treatment.

[0078] Specifically, the off state of the light-emitting body 411 is recorded as the first state, and the on state of the light-emitting body 411 is recorded as the second state. The second state includes a first working mode and a second working mode, wherein the first working mode is a low energy mode of the light-emitting body 411, and the second working mode is a high energy mode of the light-emitting body 411. The sum of the first state maintenance time and the second state maintenance time is the operation time of the light-emitting body 411; wherein, the light intensity in the low energy mode is less than the light intensity in the high energy mode, the light intensity in the low energy mode is 75 to 135 mw / cm², and the light intensity in the high energy mode is 230 to 320 mw / cm².

[0079] During the solid glue treatment of a wafer to be processed, the first state maintenance time and the second state maintenance time of the light emitting body 411, as well as the times of T1, T2, T3 and T4 can be adaptively adjusted according to actual production conditions.

[0080] Furthermore, the temperature rise rate of the temperature adjustment component 200 is set to 1° C. / min to 1.5° C. / min.

[0081] Furthermore, the first preset temperature, the second preset temperature and the third preset temperature are gradually increased; and the highest preset temperature of the wafer carrying surface does not exceed 120°C, that is, the third preset temperature is up to 120°C. Example

[0082] Pretreatment: Start the temperature adjustment component 200 to enter the heating state, and increase the temperature of the wafer carrying surface from room temperature to a first preset temperature, namely 80° C.

[0083] The light source 411 is in the first state, i.e., the off state. The wafer to be processed is placed on the wafer carrying surface, the purge assembly is started, and the temperature of the wafer carrying surface is maintained at the first preset temperature of 80°C for 15 seconds. That is, at 80°C, the wafer to be processed is baked for 15 seconds through the wafer carrying surface.

[0084] The light-emitting body 411 is in the second state, i.e., the on state, and enters the first working mode, i.e., the low energy mode, with a light intensity of 105mw / cm² and a lighting time of 10 seconds; at the same time, the temperature of the wafer carrying surface is heated by the temperature regulating component 200, and after 10 seconds, the temperature of the wafer carrying surface is raised to the second preset temperature, i.e., 90°C.

[0085] The light source 411 enters the second working mode, i.e., the high energy mode, with a light intensity of 275 mw / cm² and a lighting time of 40 seconds; at the same time, the temperature regulating component 200 continues to heat, and after 40 seconds, the temperature of the wafer carrying surface is increased to the third preset temperature, i.e., 120°C.

[0086] The light emitter 411 is in the first state again, ie, the off state, and keeps the temperature of the wafer carrying surface at the third preset temperature of 120° C. for 10 seconds, and then the purge assembly is turned off.

[0087] Post-processing: Control the temperature regulating component 200 to switch from the heating state to the cooling state to cool down the wafer carrying surface. The temperature can be lowered to the first preset temperature, i.e. 80°C, to facilitate the solid glue treatment of the next wafer to be processed, or it can be lowered to room temperature to complete the solid glue treatment of a batch of wafers to be processed.

[0088] In particular, if the duration of the light-emitting body 411 being in the first state for the first time, that is, being in the off state, is recorded as t1; the duration of illumination when the light-emitting body 411 is in the second state, that is, being in the on state, and entering the first working mode, that is, the low energy mode, is recorded as t2; the duration of illumination when the light-emitting body 411 enters the second working mode, that is, the high energy mode, is recorded as t3; the duration when the light-emitting body 411 is in the first state again, that is, being in the off state again, is recorded as t4; then the operation duration of the light-emitting body 411 is the sum of t1, t2, t3 and t4, which is equal to the sum of T1, T2, T3 and T4, and is also equal to the duration of the solid glue process, that is,

[0089]

[0090] Among them, t1 and t4 correspond to the maintaining time of the wafer carrying surface temperature, that is, T1 and T4 respectively, and t2 and t3 correspond to the heating time of the wafer carrying surface temperature T2 and T3 respectively, and the time lengths of t1 and T1, t2 and T2, t3 and T3, and t4 and T4 can be equal, for example, as shown in this embodiment, or they can be unequal. Specifically, they can be adaptively adjusted according to actual production conditions, such as the type of colloid to be cured, the material of the wafer to be processed, etc.

[0091] Obviously, the above embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention. For those skilled in the art, various obvious changes, readjustments and substitutions can be made without departing from the protection scope of the present invention. It is not necessary and impossible to list all the embodiments here. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the claims of the present invention.

Claims

1. A glue-fixing device, characterized in that: include: The base (100) is provided with an open storage cavity; a temperature regulating component (200) disposed in the storage cavity, comprising a carrier plate (210), a heating element (220) and a cooling structure, wherein the carrier plate (210) is disposed on the base (100), an upper end surface of the carrier plate (210) is configured as a wafer carrying surface, and the heating element (220) and the cooling structure are disposed on the carrier plate (210) and are used to regulate the temperature of the wafer carrying surface; A purge component, comprising a purge member (300) and a connecting pipe, wherein the purge member (300) is arranged on the base (100) and located on one side of the temperature adjustment component (200), a purge chamber is arranged in the purge member (300), a plurality of purge holes (310) arranged toward the temperature adjustment component (200) are arranged at intervals on the side wall of the purge chamber, the purge chamber is connected to an external air source through the connecting pipe, and the purge member (300) is used to purge the wafer bearing surface to purge impurities on the surface of the wafer; The ultraviolet mechanism (400) is provided with a light emitting body (411) and a reflective member (421), wherein the light emitting body (411) is capable of emitting ultraviolet light, and the reflective member (421) is disposed on the opening end of the storage cavity and is capable of reflecting the ultraviolet light emitted by the light emitting body (411) toward the wafer carrying surface.

2. The glue fixing device according to claim 1, characterized in that: A center line connecting the plurality of purge holes (310) is higher than the wafer carrying surface.

3. The glue fixing device according to claim 1, characterized in that: A temperature regulating cavity is arranged in the carrier plate (210), and a liquid inlet (231) and a liquid outlet (232) which are in communication with the temperature regulating cavity are arranged on the carrier plate (210); the temperature regulating cavity cooperates with the liquid inlet (231) and the liquid outlet (232) to form the cooling structure, and the heating element (220) is arranged on the lower end surface of the carrier plate (210).

4. The glue fixing device according to claim 1, characterized in that: The temperature adjustment component (200) further comprises a heat insulating member (240), wherein the heat insulating member (240) is arranged on a side of the carrier plate (210) facing away from the ultraviolet mechanism (400).

5. The glue fixing device according to any one of claims 1 to 4, characterized in that: The reflective element (421) comprises a reflective lampshade in the form of a semicircular shell, wherein the opening of the reflective lampshade is arranged toward the wafer carrying surface; The illuminant (411) is located inside the reflective lampshade, and along the height direction, the axis of the reflective lampshade is arranged concentrically with the axis of the illuminant (411).

6. The glue fixing device according to claim 5, characterized in that: The opening of the storage cavity is arranged upward, the purge components are arranged in the storage cavity, and the reflective lamp cover is arranged at the opening end of the storage cavity.

7. A method for solidifying glue, characterized in that: The adhesive fixing device according to any one of claims 1 to 6 comprises the following steps: Pretreatment: starting the temperature adjustment component (200) to enter a heating state, and raising the temperature of the wafer carrying surface to a first preset temperature; The light emitter (411) is in a first state, a wafer to be processed is placed on a wafer carrying surface, a purge component is started, and the temperature of the wafer carrying surface is maintained at the first preset temperature for T1 seconds; The light emitter (411) is in the second state and enters the first working mode, and is heated by the temperature regulating component (200), and the temperature of the wafer carrying surface is raised to a second preset temperature after T2 seconds; The light emitter (411) enters a second working mode, and the temperature regulating component (200) continues to heat, and after T3 seconds, the temperature of the wafer carrying surface is raised to a third preset temperature; The light emitter (411) is in the first state again, and keeps the temperature of the wafer carrying surface at the third preset temperature for T4 seconds, and then turns off the purge component; Post-processing: controlling the temperature adjustment component (200) to switch from the heating state to the cooling state, thereby cooling the wafer carrying surface.

8. The adhesive solidification method according to claim 7, characterized in that: The operating time of the light-emitting body (411) is equal to the sum of T1, T2, T3 and T4.

9. The adhesive solidification method according to claim 7, characterized in that: The temperature rise rate of the temperature adjustment component (200) is set to 1°C / min to 1.5°C / min.

10. The adhesive solidification method according to claim 7, characterized in that: The first preset temperature, the second preset temperature, and the third preset temperature are gradually increased, and the highest preset temperature of the wafer carrying surface does not exceed 120°C.

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