Etching rate determination method, preparation method, electronic device and computer readable medium

Abstract

The present invention discloses an etching rate determination method, a preparation method, an electronic device and a computer-readable medium. The etching rate determination method comprises: determining the texture content of an initial Invar sheet; determining an etching rate of etching the initial Invar sheet according to the texture content in the initial Invar sheet, wherein the etching rate is inversely correlated with the content of cubic texture, the etching rate is positively correlated with the content of reference texture, and the atomic arrangement density of the reference texture is less than the atomic arrangement density of the cubic texture.

Description

Technical Field

[0001] The invention relates to the field of Invar alloy foils, and in particular to a method for determining an etching rate of an Invar sheet, a method for preparing an Invar foil, an electronic device and a computer-readable medium. Background Art

[0002] Fine Metal Mask (FMM) precisely vaporizes organic materials at designated locations on the panel to form pixels. In order to ensure the process accuracy of the vapor deposition process, FMM is generally made of Invar alloy (FeNi36 alloy, Invar) with an extremely low thermal expansion coefficient. FMM manufacturers usually purchase Invar alloy foil with a thickness of less than 100μm (with extremely high requirements for thickness and uniformity) and then perform subsequent cutting and etching processes. As for the most widely used etching method for preparing FMM, the thickness of the Invar alloy foil is required to be thinner (the maximum requirement can be up to 10μm).

[0003] It is very difficult to prepare high-quality Invar alloy foil with a thickness of 10~50μm and meeting the FMM manufacturing requirements by the existing rolling process. In addition, the quality of FMM determines the quality of pixels and affects the screen imaging effect. Therefore, the Invar alloy foil is required not only to meet the thickness requirements, but also to ensure that multiple indicators such as the surface cleanliness and flatness of the foil are qualified.

[0004] Developing a method for determining the etching rate of Invar sheet and a method for preparing Invar foil to further reduce the thickness of Invar alloy foil and meet the high quality requirements of FMM is an urgent problem to be solved in this field. Summary of the invention

[0005] The present invention aims to solve one of the technical problems in the related art to a certain extent. To this end, the present invention provides a method for determining an etching rate of an Invar sheet, a method for preparing an Invar foil, an electronic device and a computer-readable medium.

[0006] In order to achieve the above object, as a first aspect of the present invention, a method for determining an etching rate of an Invar sheet is provided, comprising:

[0007] Determine the texture content of the initial Invar sheet;

[0008] The etching rate of the initial Invar sheet is determined according to the texture content in the initial Invar sheet, wherein the etching rate is inversely correlated with the content of the cubic texture, the etching rate is positively correlated with the content of the reference texture, and the atomic arrangement density of the reference texture is less than the atomic arrangement density of the cubic texture.

[0009] Further, determining an etching rate for etching the initial Invar sheet material according to the texture content in the initial Invar sheet material comprises:

[0010] When the texture content in the initial Invar sheet satisfies a set condition, determining an etching rate of the initial Invar sheet to be a first etching rate;

[0011] When the texture content in the initial Invar sheet does not satisfy the set condition, determining the etching rate of the initial Invar sheet to be a second etching rate, wherein the first etching rate is greater than the second etching rate;

[0012] The set conditions include simultaneously satisfying the following conditions (1) and (2): (1) the upper limit of the cubic texture content is less than or equal to a set value; (2) the cubic texture content is less than or equal to the sum of the reference texture contents multiplied by a set coefficient.

[0013] Furthermore, the initial Invar sheet with the first etching rate is etched and thinned to become a first Invar foil, and the initial Invar sheet with the second etching rate is etched and thinned to become a second Invar foil, and the thickness uniformity of the first Invar foil is greater than the thickness uniformity of the second Invar foil.

[0014] Furthermore, the setting condition includes satisfying the following formula (a) and formula (b) at the same time:

[0015] Cube≤A(a);

[0016] B*Cube≤Copper+Brass+Goss+S(b);

[0017] Among them, Copper is copper texture {112} <111> content;

[0018] Brass is brass texture {110} <112> content;

[0019] Goss is Gaussian texture {110} <001> content;

[0020] S is S-type texture {123} <634> content;

[0021] Cube is cubic texture {001} <100> content;

[0022] A does not exceed 60%;

[0023] B is not less than 2.

[0024] Furthermore, A shall not exceed 10% and B shall not be less than 5.

[0025] Furthermore, the reference texture includes at least one of a copper texture, a brass texture, a Gaussian texture and an S-type texture.

[0026] Further, the determining of the texture content of the initial Invar sheet material comprises:

[0027] Acquire scanning electron microscope images of multiple specimens made from the initial Invar sheet;

[0028] Identify the SEM images of each sample and determine the texture content in each sample;

[0029] The average texture content of the multiple samples is taken as the texture content of the initial Invar sheet.

[0030] As a second aspect of the present invention, a method for preparing an Invar foil is disclosed, comprising:

[0031] Provide initial Invar sheet;

[0032] Determine the etching rate using the above method, wherein the etching rate includes a first etching rate and a second etching rate, and the first etching rate is greater than the second etching rate;

[0033] An etching environment is provided, and the initial Invar sheet is etched according to a determined etching rate to obtain the Invar foil.

[0034] Further, the Invar foil includes a first Invar foil and a second Invar foil, the first Invar foil corresponds to the first etching rate, the second Invar foil corresponds to the second etching rate, and the thickness of the first Invar foil is less than the thickness of the second Invar foil.

[0035] Further, the providing of the etching environment and etching the initial Invar sheet material according to the determined etching rate comprises:

[0036] A plurality of rows of spray pipes are used to spray etching liquid onto the initial Invar sheet, wherein the plurality of rows of spray pipes are distributed along the length direction of the initial Invar sheet, the spray pressure is between 0.05Mpa and 2Mpa, the placement angle between adjacent rows of the spray pipes is between 0° and 15°, the rotation angle of the spray pipe around its own axis is between 0° and 45°, and the rotation speed of the spray pipe is between 60rpm and 100rpm.

[0037] Furthermore, the spray pipe is provided with a plurality of nozzles distributed along the length direction of the initial Invar sheet material, and the rotation angle of the nozzles along the width direction of the initial Invar sheet material is between 0° and 15°.

[0038] Furthermore, the providing of the etching environment and etching the initial Invar sheet material according to the determined etching rate further includes:

[0039] When the redox potential of the etching solution is less than 500 mV, the etching solution is replaced.

[0040] Furthermore, the initial Invar sheet is placed on a transmission unit, which is used to carry and transport the initial Invar sheet. The initial Invar sheet is thinned under the drive of the transmission unit, and the transportation speed of the initial Invar sheet driven by the transmission unit is between 0.5 m / min and 8 m / min.

[0041] Furthermore, the initial Invar sheet material has a thickness between 20 μm and 100 μm.

[0042] Furthermore, the thickness of the Invar foil is between 10 μm and 50 μm.

[0043] As a third aspect of the present invention, an electronic device is provided, the electronic device comprising:

[0044] one or more processors;

[0045] A memory having one or more computer programs stored thereon, when the one or more computer programs are executed by the one or more processors, the one or more processors implement the above-mentioned etching rate determination method.

[0046] As a fourth aspect of the present invention, a computer readable medium is provided, and when the computer program is executed by a processor, the above-mentioned etching rate determination method is implemented.

[0047] The present invention has the following beneficial effects:

[0048] By utilizing the different atomic arrangement densities of different textures, the difficulty of etching reactions of different textures is different, and the etching rates are different, and then the relationship between the texture content of different atomic arrangement densities and the etching rate can be determined. The etching rate is negatively correlated with the cubic texture content and positively correlated with the reference texture content. The atomic arrangement density of the reference texture is smaller than the atomic arrangement density of the cubic texture. The etching rate of the initial Invar sheet can be determined according to the corresponding texture content in the initial Invar sheet. Furthermore, by using the etching rate determination method of the present invention to screen the initial sheet material, an Invar sheet with a consistent etching rate can be obtained, and the subsequent thinning thickness can be stably controlled within an ideal range, thereby improving the uniformity of the thinning thickness.

[0049] On the other hand, an Invar sheet with a higher etching rate and an Invar sheet with a lower etching rate are identified, and the preparation method of the present invention is applied to them to prepare Invar foil. The Invar sheet with a higher etching rate can be further prepared to obtain ultra-thin Invar foil, which greatly alleviates the urgent need for current technology to reduce the thickness of Invar foil and reduces the development difficulty and cost pressure of traditional processes.

[0050] The most important thing is that different types of textures have different etching rates, especially the cubic texture content is inversely proportional to the etching rate, which is very different from the trend of other textures being proportional to the etching rate. The existence of completely different textures with different trends in affecting the etching rate in the same Invar sheet will cause the thickness uniformity of the foil to deteriorate after the Invar sheet is thinned, ultimately affecting the accuracy of the opening size of the FMM product. The thickness uniformity of the foil obtained after etching and thinning of the Invar sheet after the etching rate is determined by the method of the present invention is significantly improved, which greatly improves the subsequent processability and product performance.

[0051] These features and advantages of the present invention will be disclosed in detail in the following specific embodiments and drawings. The best embodiments or means of the present invention will be described in detail in conjunction with the drawings, but they are not intended to limit the technical solutions of the present invention. In addition, there are multiple features, elements, and components that appear in each of the following texts and drawings, and different symbols or numbers are marked for convenience, but they all represent components with the same or similar structures or functions. BRIEF DESCRIPTION OF THE DRAWINGS

[0052] The present invention will be further described below in conjunction with the accompanying drawings:

[0053] Figure 1 It is a flow chart of an implementation method of a method for determining an etching rate of an Invar plate provided by the present invention;

[0054] Figure 2 It is a flow chart of an implementation method of a method for preparing an Invar foil provided by the present invention;

[0055] Figure 3 is a flow chart of an implementation of an electronic device provided by the present invention;

[0056] Figure 4 is a flowchart of an implementation of a computer-readable medium provided by the present invention;

[0057] Figure 5 It is a schematic diagram of the grain orientation distribution of the plate provided by the present invention before and after rolling.

[0058] Description of Reference Numerals

[0059] 101: Processor 102: Memory

[0060] 103: I / O interface 104: bus DETAILED DESCRIPTION

[0061] Embodiments of the present invention are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements with the same or similar functions. The embodiments in the implementation manner are intended to be used to explain the present invention and should not be construed as limiting the present invention.

[0062] References to "one embodiment" or "example" or "example" in this specification mean that a particular feature, structure, or characteristic described in conjunction with the embodiment itself may be included in at least one embodiment disclosed herein. The appearance of the phrase "in one embodiment" in various places in the specification does not necessarily refer to the same embodiment.

[0063] The inventors have found that the tile sheet will produce a large degree of plastic deformation during the rolling process. As the pressing rate continues to increase, the degree of deformation also increases. The slip plane and slip direction of each grain gradually rotate in the direction of the external force. When the deformation increases to a certain extent, the orientation of each grain will gradually tend to be consistent, and the disorder of the grain orientation in the polycrystalline is destroyed. This phenomenon is called the preferred orientation of the grain, and the corresponding deformation organization is called deformation texture. Figure 5 As shown in (a) in the figure, before the plate is rolled, the crystal planes and crystal directions of each grain are randomly distributed; when the plate is rolled, it is subjected to both pressure and tension, and the texture formed is called plate texture, which is characterized by a crystal plane of each grain being parallel to the rolling plane, and a crystal direction being parallel to the rolling direction, such as Figure 5 As shown in (b) in .

[0064] The above plate texture is characterized by {hkl} <uvw>represents different plate textures, {hkl} represents the crystal plane parallel to the rolling plane, <uvw>Indicates the crystal direction parallel to the rolling direction. Common plate textures include: Brass texture Brass{110} <112> 、Copper texture Copper{112} <111> , cubic texture Cube{001} <100> , Goss {110} <001> 、S-type texture S{123} <634> .

[0065] According to the inventor's research, when the Invar sheet contains a large amount of Cube texture, the etching rate will decrease, while when it contains more other types of textures (Brass, Copper, Goss & S type), the etching rate will increase, and it is easier to be etched and peeled. During the etching process, the etching solution reacts chemically with the Invar surface. The reaction here is essentially a process in which the metal bonds in the material are broken and the metal cations and anions in the solution form ionic bonds again. Therefore, the strength of the metal bonds between metal atoms affects the difficulty of the etching reaction, and then affects the etching rate. When metal atoms combine into a solid, in order to keep the solid metal in the most stable state, the atoms always tend to be closely arranged spontaneously to ensure that the solid metal has the lowest potential energy. Theoretically, when the potential energy is zero, the atomic distance is called the equilibrium distance, but factors such as different atomic radii, material defects or solid solution will cause the unit cell to be distorted, causing the atoms to deviate from the equilibrium distance, and the material potential energy will increase accordingly, and the stability will be relatively poor, that is, it is easier to react with the outside world. The crystal structure of Invar metal is face-centered cubic. On the whole, the cubic texture {001} <100> Among the five main textures, the atoms are arranged more closely, the potential energy between atoms is lower, the etching reaction is more difficult to occur, the etching rate is slower, and the cubic texture is easily formed during rolling and heat treatment. Therefore, in the process of etching Invar sheet to prepare ultra-thin Invar foil, Invar sheet with less Cube texture content is selected as the raw material for etching, so that Invar foil with smaller thickness can be obtained, and at the same time, the large difference in etching rate between Cube texture and other textures can be avoided, resulting in poor foil thickness uniformity.

[0066] As a first aspect of the present invention, a method for determining the etching rate of an Invar sheet is provided. Figure 1 As shown, specifically including:

[0067] In step S110, the texture content of the initial Invar sheet is determined;

[0068] In step S120, the etching rate of the initial Invar sheet is determined according to the texture content in the initial Invar sheet, wherein the etching rate is negatively correlated with the content of the cubic texture, and the etching rate is positively correlated with the content of the reference texture, and the atomic arrangement density of the reference texture is less than the atomic arrangement density of the cubic texture.

[0069] In the step of determining the etching rate using the method provided by the embodiment of the present invention, the atomic arrangement in the cubic texture of the initial Invar plate is tighter than that in other textures, so that the potential energy between atoms in the cubic texture is lower, and the metal material corresponding to the cubic texture is more stable. In the process of etching the metal, the metal bonds between metal atoms are stronger and difficult to break, so that it is more difficult for metal atoms to combine with anions in the etching solution through ionic bonds, which is reflected in a slower etching rate and a more difficult etching reaction. Therefore, the content of the cubic texture increases, the etching rate is slower, and the etching rate is negatively correlated with the content of the cubic texture. On the other hand, the atomic arrangement of other textures in the initial Invar plate is tighter than that of the cubic texture, and the potential energy between atoms is also higher. In the etching process, the metal materials corresponding to the other textures have relatively weak metal bond binding forces between metal and metal atoms, and metal atoms are more likely to combine with anions in the etching solution through ionic bonds, which is reflected in a faster etching rate and an easier etching reaction. Therefore, the content of other textures increases, the etching rate becomes faster, and the etching rate is positively correlated with the content of other textures.

[0070] Preferably, the reference texture includes at least one of a copper texture, a brass texture, a Gossian texture and an S-type texture.

[0071] In step S110, the present invention does not specifically limit how to obtain the initial Invar sheet material. For example, it can be obtained by purchasing from outside. For another example, it can be obtained by rolling.

[0072] The present invention does not specifically limit the method for determining the texture content of the initial Invar sheet material, and the texture content can be obtained through outsourcing testing. For another example, the texture content in the sheet material can be detected and analyzed through the backscattered electron diffraction technology (Electron Back Scatter Diffraction, EBSD). For another example, the diffraction intensity of the sample is measured through X-ray diffraction technology (Xraydiffraction, XRD), and the polar projection is performed to obtain the pole figure, and the calculation is performed based on the pole figure to obtain the quantitative texture information.

[0073] In some embodiments, the step of determining the texture content of the initial Invar sheet material includes:

[0074] Acquire scanning electron microscope images of multiple specimens made from the initial Invar sheet;

[0075] Identify the SEM images of each sample and determine the texture content in each sample;

[0076] The average texture content of multiple samples was taken as the texture content of the initial Invar sheet.

[0077] Among them, the equipment for obtaining the above-mentioned scanning electron microscope images uses a Verios G4 UC model thermal field emission scanning electron microscope from Thermo Scientific, USA, combined with an EBSD probe and analysis software from Oxford Instruments, UK, to determine the texture content in each sample, and the corresponding texture content of each sample is averaged as the texture content of the initial Invar sheet.

[0078] The present invention does not specifically limit the number of samples of the initial Invar sheet material to be tested and the size of the sample area. In some embodiments, three samples are taken from the initial Invar sheet material at intervals along the width direction, and the cutting area of ​​the three samples is 10*10mm. The sample surface is kept flat and clean, and the sample surface is ion polished to eliminate the sample surface strain. The texture content of the three samples is measured, and the average value is calculated as the texture content of the initial Invar sheet material.

[0079] For ease of understanding, the following explains how to determine the texture content of the initial Invar sheet material by way of example.

[0080] First, prepare sample x, sample y, and sample z;

[0081] Determine the copper texture {112} in sample x <111> The content is X, and the copper texture {112} in sample y is determined <111> The content is Y, and the copper texture {112} in sample z is determined <111> The content is Z.

[0082] It can be seen that the copper texture in the initial Invar sheet {112} <111> The content is (X+Y+Z) / 3.

[0083] The calculation methods of other texture contents are similar to those of copper texture {112} <111> The method of content is similar and will not be repeated here.

[0084] The present invention does not impose any special restrictions on the sample surface of the initial Invar board material to be tested. Generally, the board material includes a top surface, a bottom surface and four edge surfaces, and the sample surface to be tested can be the top surface or the bottom surface.

[0085] In step S120, the etching rate is negatively correlated with the cubic texture content, and the etching rate is positively correlated with other texture contents, and then the etching rate of the initial Invar sheet can be determined according to the texture content in the initial Invar sheet, including:

[0086] When the texture content in the initial Invar sheet satisfies a set condition, determining the etching rate of the initial Invar sheet as a first etching rate;

[0087] When the texture content in the initial Invar sheet does not meet the set condition, determining the etching rate of the initial Invar sheet to be a second etching rate, wherein the first etching rate is greater than the second etching rate;

[0088] As a preferred embodiment, the setting conditions include simultaneously satisfying the following conditions (1) and (2): (1) the upper limit of the cubic texture content is less than or equal to the set value; (2) the cubic texture content is less than or equal to the sum of the remaining texture contents multiplied by the set coefficient. Condition (1) is to ensure that the absolute content of the cubic texture in the material is at a low level, but different invars have different contents of different textures due to different compositions and processing techniques. In order to avoid the following special situation "the absolute content of the cubic texture satisfies condition (1), but the content of other textures that are easily etched and stripped is also low", condition (2) can ensure that the relative content of the cubic texture is at a low level to avoid its influence on the etching rate.

[0089] The initial Invar sheet with a first etching rate is etched and thinned to become a first Invar foil, and the initial Invar sheet with a second etching rate is etched and thinned to become a second Invar foil. The thickness uniformity of the first Invar foil is greater than that of the second Invar foil.

[0090] Different types of textures have different etching rates, especially the cubic texture content is inversely proportional to the etching rate, which is very different from the trend of other textures being proportional to the etching rate. The existence of completely different textures with different trends in affecting the etching rate in the same Invar sheet will cause the thickness uniformity of the foil to deteriorate after the Invar sheet is thinned, ultimately affecting the accuracy of the opening size of the precision metal mask plate product. After the Invar sheet with the etching rate determined by the method of the present invention, after screening with the same texture content and etching rate, an Invar sheet with a consistent etching rate can be obtained, and the thickness uniformity of the foil obtained after etching and thinning is significantly improved, which greatly improves the subsequent processability and product performance.

[0091] For ease of understanding, the thickness uniformity of Invar foil is explained below by way of example. The thickness uniformity of Invar foil obtained by etching and thinning the initial Invar sheet is calculated, and the measurement and calculation method is as follows:

[0092] Take a sample of 1000mm long Invar foil and divide it into n areas (n can be between 20 and 200 depending on the width of the foil). Use a semi-automatic contact thickness gauge to check the thickness of the Invar foil in each area. The thickness uniformity calculation formula is:

[0093]

[0094] Where x0 is the average thickness of n regions, and xn is the thickness measurement value of the nth region.

[0095] The thickness uniformity of the Invar foil is calculated according to the above formula. The thickness uniformity of the first Invar foil is greater than that of the second Invar foil. The greater the thickness uniformity, the more uniform the thickness of the foil and the smaller the thickness deviation. The first Invar foil has a consistent first etching rate because the corresponding Invar sheet texture content is a texture that is easy to strip and etch, so the thickness of the foil after etching is also uniform. The second Invar foil has a random initial Invar sheet texture content, and both the difficult-to-etch cubic texture and other easy-to-etch textures exist, and the content ratio is random. Therefore, the corresponding etching rate is not consistent, and the thickness uniformity of the foil after etching is poor.

[0096] Preferably, the initial Invar sheet satisfies both formulas (1) and (2) to be the Invar sheet with the best etching rate determined by the present invention. The present invention does not impose any special restrictions on the setting conditions. The setting value and setting coefficient can be adjusted accordingly according to the texture content of the initial Invar sheet and the matching etching process parameters. However, when Cube>60% or 2*Cube>Copper+Brass+Goss+S, we believe that the adjustment of the etching process parameters will lead to a significant decrease in production efficiency or a significant increase in cost. At this time, the Invar metal should be heat treated to improve the structure. Therefore, as a preferred embodiment, the setting conditions include simultaneously satisfying the following conditions (a) and (b):

[0097] Cube≤A(a);

[0098] B*Cube≤Copper+Brass+Goss+S(b);

[0099] Among them, Copper is a copper-type texture {112} <111> content;

[0100] Brass is brass texture {110} <112> content;

[0101] Goss is Gaussian texture {110} <001> content;

[0102] S is S-type texture {123} <634> content;

[0103] Cube is cubic texture {001} <100> content;

[0104] A does not exceed 60%;

[0105] B is not less than 2.

[0106] By limiting the content of cubic texture and other textures within a set range, a specific etching rate of the plate can be obtained. In some embodiments, the initial Invar plate is screened so that the proportion of cubic texture to other textures is lower than a set coefficient and the upper limit of the cubic texture content is lower than a set value, so as to determine that the plate has a larger etching rate when etching, and thus a thinner Invar foil can be obtained after etching. In other embodiments, the initial Invar plate is screened so that the proportion of cubic texture to other textures is higher than a set coefficient and the upper limit of the cubic texture content is higher than a set value, so as to determine that the plate has a smaller etching rate when etching, and the Invar foil has a greater thickness after etching.

[0107] The present invention obtains thickness and etching rate by etching Invar plates with different texture contents, thereby determining the above range of texture type and content that is beneficial to improving the etching rate.

[0108] As a further preferred implementation, in order to obtain a more uniform and faster etching rate, in the embodiment provided by the present invention, the setting conditions include simultaneously satisfying the following formula (c) and formula (d):

[0109] Cube≤10%(c)

[0110] 5*Cube≤Copper+Brass+Goss+S(d);

[0111] Among them, Copper is a copper-type texture {112} <111> content;

[0112] Brass is brass texture {110} <112> content;

[0113] Goss is Gaussian texture {110} <001> content;

[0114] S is S-type texture {123} <634> content;

[0115] Cube is cubic texture {001} <100> content.

[0116] The etching rate of the Invar sheet is determined by judging whether the texture content of the initial Invar sheet satisfies the above formula at the same time. The initial Invar sheet that satisfies the above formula is etched, and its texture content and type are more conducive to etching. Therefore, a thinner Invar foil can be easily obtained. The thickness of this Invar foil can reach between 10μm and 50μm, which reduces the difficulty of the etching process to reduce the thickness.

[0117] The thickness of the Invar foil prepared by the above method is reduced, so the Invar foil provided by the present invention is more suitable for being made into a precision Invar mask plate with high process accuracy.

[0118] The present invention also provides an electronic device, such as Figure 3 As shown, including:

[0119] One or more processors 101;

[0120] The memory 102 stores one or more computer programs. When the one or more computer programs are executed by the one or more processors 101, the one or more processors 101 implement the above-mentioned method for determining the etching rate of the Invar sheet.

[0121] The electronic device may further include one or more I / O interfaces 103 connected between the processor 101 and the memory 102 and configured to implement information interaction between the processor 101 and the memory 102 .

[0122] Among them, the processor 101 is a device with data processing capabilities, including but not limited to a central processing unit (CPU), etc.; the memory 102 is a device with data storage capabilities, including but not limited to random access memory (RAM, more specifically SDRAM, DDR, etc.), read-only memory (ROM), electrically erasable programmable read-only memory (EEPROM), flash memory (FLASH); the I / O interface (read-write interface) is connected between the processor and the memory, and can realize information exchange between the processor and the memory, including but not limited to a data bus (Bus), etc.

[0123] In some embodiments, the processor 101 , the memory 102 , and the I / O interface 103 are connected to each other via a bus 104 , and further connected to other components of the computing device.

[0124] like Figure 4 As shown, the present invention also provides a computer-readable medium having a computer program stored thereon, wherein when the computer program is executed by a processor, the above-mentioned method for determining the etching rate of the Invar sheet is implemented.

[0125] The present invention also provides a method for preparing an Invar foil, such as Figure 2 As shown, including:

[0126] In step S150, an initial Invar sheet is provided;

[0127] In step S160, the etching rate is determined by using the above method, wherein the etching rate includes a first etching rate and a second etching rate, and the first etching rate is greater than the second etching rate;

[0128] In step S170, an etching environment is provided, and the initial Invar sheet is etched according to a determined etching rate to obtain an Invar foil;

[0129] The Invar foil includes a first Invar foil and a second Invar foil. The first Invar foil corresponds to a first etching rate, the second Invar foil corresponds to a second etching rate, and the thickness of the first Invar foil is smaller than the thickness of the second Invar foil.

[0130] The present invention does not impose any particular limitation on how to apply the relationship between texture content and etching rate.

[0131] In some embodiments, some initial Invar sheets with the same starting thickness have their etching rates determined by the above-mentioned etching rate determination method. The Invar sheets with a first etching rate have a higher etching rate during the etching process and are easier to be etched. The prepared Invar foil is the first Invar foil. The thickness of the first Invar foil is also smaller, and it is more suitable for being subsequently made into a precision Invar mask plate with high process accuracy.

[0132] In other embodiments, a batch of initial Invar sheets are provided, and their etching rates are determined by the above-mentioned etching rate determination method. Invar sheets with the same etching rate are selected and subjected to the same etching method, so that a plurality of Invar foils with uniform thickness can be prepared.

[0133] In other embodiments, a batch of initial Invar sheets are provided, and their etching rates are determined by the above-mentioned etching rate determination method. Using the same etching method, the parameters of the Invar sheets with a first etching rate are adjusted during the etching process to avoid the Invar foil being too thin due to the high first etching rate, which does not meet the process standard. Correspondingly, the etching parameters of the Invar sheets with a second etching rate can also be adjusted to avoid the Invar foil being too thick due to the low etching rate.

[0134] The etching rate of the Invar sheet is determined by the etching rate determination method. The thickness of the prepared Invar foil can be predicted from the perspective of raw materials. The parameters in the etching process can also be adjusted to prepare the Invar foil that meets the thickness requirements. A batch of Invar sheets with basically consistent etching rates and the same thickness can be selected by determining their etching rates for etching to prepare a batch of Invar foils with uniform thickness to avoid excessive thickness differences.

[0135] The present invention does not specifically limit the etching method, for example, an acid solution may be used for immersion etching. Another example is plasma etching for thinning. It is only necessary to thin the initial Invar sheet.

[0136] In some embodiments, multiple rows of spray pipes are used to spray etching liquid onto the initial Invar sheet material. The multiple rows of spray pipes are distributed along the length direction of the sheet material. The placement angle between adjacent rows of spray pipes is between 0° and 15°. The rotation angle of the spray pipe around its own axis is between 0° and 45°. The rotation speed of the spray pipe is between 60rpm and 100rpm. The spray pipe has multiple nozzles distributed along the length direction. The rotation angle of the nozzle along the width direction of the initial Invar sheet material is between 0° and 15°.

[0137] The spray pipe etching can be rotated at multiple angles to achieve uniform thinning of the initial Invar sheet. The spray pipe also includes a nozzle, which can also be rotated at a certain angle to achieve that the etching liquid can evenly cover the entire surface area of ​​the initial Invar sheet.

[0138] When the spray pressure is high, the etching solution is updated more frequently, the etching reaction is sufficient, the etching rate is increased, and the flushing effect of the high pressure is conducive to the removal of etching products, promoting the continued etching reaction, so that the etching depth maintains a large growth amount. When the spray pressure is too high, the force between the etching solution and the surface increases, and most of the etching solution is ejected before it fully contacts the surface. The residence time of the etching solution is shortened, the etching efficiency is reduced, and the etching amount is reduced.

[0139] In some embodiments, the spray pressure of the etching solution is between 0.05Mpa and 2Mpa, the solvent of the etching solution is water, the solutes are ferric chloride and hydrogen chloride, the specific gravity of the etching solution is between 1.381 and 1.629, and the temperature of the etching solution is between 40° C. and 60° C. The present invention does not specifically limit the various parameters of the etching solution, as long as it meets the applicable requirements of the etching and thinning equipment and can thin the initial Invar sheet.

[0140] During the etching spray process, the etching solution will be gradually consumed and the concentration will decrease, which will cause the etching rate to slow down. The present invention monitors the redox potential of the etching solution and replaces the new etching solution in time to achieve the effect of basically consistent etching rates for multiple initial Invar sheets, thereby reducing the final thickness deviation caused by process fluctuations. The present invention does not specifically limit the monitoring method of the etching solution. For example, the redox potential of the etching solution can be tested for monitoring. For another example, the method of sample etching thickness testing can be used for monitoring. For another example, the state of the etching solution surface can be observed for monitoring. It is only necessary to ensure that the etching rate of the initial Invar sheet is basically consistent.

[0141] In some embodiments, when the redox potential of the etching solution is less than 500mV, the etching solution is replaced, and the replacement of the etching solution includes draining the old etching solution and injecting new etching solution. In other embodiments, when the redox potential of the etching solution is less than 500mV, an oxidant is added to make the redox potential of the etching solution meet the engineering requirements again, and the etching solution can continue to be used for etching. Obviously, it can also be supplemented with new etching solution.

[0142] The present invention has no special restrictions on other treatment methods of the Invar sheet material. For example, the initial Invar sheet material can also be cleaned. The present invention does not make any special restrictions on cleaning. It only needs to satisfy the cleaning function, remove the impurities, particles, oil stains and other obstructions on the surface of the initial Invar sheet material that affect the subsequent etching and thinning, and remove the etching solution remaining on the surface. For example, the cleaning can be carried out by spraying a solution. For another example, the cleaning and impurity removal can be carried out by immersing in a solution tank. The present invention does not make any special restrictions on the number of cleaning times. In some embodiments, cleaning includes at least one alkali cleaning, acid cleaning and water cleaning.

[0143] In some embodiments, the alkali washing uses an alkaline solution with a pH value between 8 and 13 to clean the initial Invar sheet. In some embodiments, the acid washing uses an acidic solution with a pH value between 0 and 6 to spray the initial Invar sheet for 12s to 240s. In some embodiments, a hydrochloric acid solution or a sulfuric acid solution with a mass fraction of 2% to 10% is sprayed on the surface of the initial Invar sheet, and the spray pressure of the acid washing is between 0.05MPa and 2MPa. After the alkali washing or acid washing is completed, water washing can be performed to clean and remove the other solutions remaining on the Invar sheet. In some embodiments, the spray pressure of water washing is between 0.05MPa and 2MPa.

[0144] The initial Invar sheet is placed on a transmission unit, and the transmission unit is used to carry and transport the initial Invar sheet. The initial Invar sheet is etched under the driving of the transmission unit, and the transportation speed of the initial Invar sheet driven by the transmission unit is between 0.5 m / min and 8 m / min.

[0145] In order to obtain a thinner Invar foil with a thickness between 10 μm and 50 μm, the thickness of the initial Invar sheet is between 20 μm and 100 μm. However, the preparation method of the present invention does not limit the thickness of the initial Invar sheet, and any Invar sheet that meets the thickness requirements of the etching equipment can be further thinned by the preparation method of the present invention.

[0146] The features and performance of the present invention are further described in detail below in conjunction with the embodiments.

[0147] Example

[0148] Example 1

[0149] A 25μm thick Invar sheet was used, and three samples with an area of ​​10*10mm were cut from both sides and the middle area in the width direction of the sheet. The sample surface was cleaned and ion polished to keep the surface smooth and clean and eliminate surface strain. The test equipment used was a Verios G4 UC thermal field emission scanning electron microscope with an Oxford Instruments EBSD probe. The sample was placed on the sample stage and sent into the sample chamber. The test area was found under the observation of the scanning electron microscope signal, the sample was tilted 70 degrees, the test surface was facing the direction of the EBSD probe, and the scanning area was set to a square grid of 0.09~0.36μm2 for testing.

[0150] Take SEM images of three specimens of Invar sheet;

[0151] The scanning electron microscope image of each sample was identified, and after the identification, the data was analyzed to obtain the content of different types of textures on the surface of each sample. The corresponding texture content of the three samples was averaged to obtain the corresponding texture content of the Invar board.

[0152] Determine whether the texture content of the above Invar board satisfies the formula:

[0153] Cube≤60%(a);

[0154] 2*Cube≤Copper+Brass+Goss+S(b);

[0155] Further, it is determined whether the texture content of the above-mentioned Invar board satisfies the formula:

[0156] Cube≤10%(c)

[0157] 5*Cube≤Copper+Brass+Goss+S(d);

[0158] The Invar plate of Example 1 was named Invar-25.

[0159] Invar-25 is etched to prepare Invar foil. The specific steps are as follows:

[0160] Step 1: Invar-25 with a length of 200m is sent to the cleaning equipment at a transportation speed of 2m / min. The length direction of Invar-25 is consistent with the transportation direction. The spray pressure above Invar-25 is 0.2MPa, and the spray pressure below Invar-25 is 0.18MPa; after the first water washing, spraying with sodium hydroxide solution with a pH value of 12 and 50℃, the second water washing, spraying with hydrochloric acid solution with a pH value of 2 and 40℃, the third water washing, and drying in an environment of 75℃, the intermediate state Invar-25 is obtained.

[0161] Step 2: The intermediate state Invar-25 is sent into the thinning equipment at a transport speed of 4m / min. The spray pressure above the intermediate state Invar-25 is 0.8MPa, and the spray pressure below is 0.8MPa. It is sequentially washed with water for the first time, sprayed with etching liquid for the first time, de-liquidated with sponge roller for the first time, sprayed with etching liquid for the second time, de-liquidated with sponge roller for the second time, sprayed with pH=1, 30℃ sulfuric acid solution, washed with water for the second time, and dried in an environment of 75℃. Among them, the angle between the spray pipes 1 in adjacent rows in the etching chamber for the first and second etching liquid sprays is 5°, and the etching liquid is a mixed solution of ferric chloride, hydrochloric acid and water at 65℃ and a specific gravity of 1.483.

[0162] Example 2

[0163] The Invar foil was prepared by the same preparation method as in Example 1, except that the thickness of the Invar sheet was 40 μm, the texture content was different, and it was named Invar-40. In addition, the thickness uniformity of the foil prepared in this example was calculated, and the measurement and calculation methods were as follows:

[0164] Take a sample of 1000mm long from a roll of metal foil and divide it into n areas (n can be between 20 and 200 depending on the width of the foil). Use a semi-automatic contact thickness gauge to check the thickness of the metal foil in each area. The calculation formula for calculating the thickness uniformity is:

[0165]

[0166] Where x0 is the average thickness of n regions, and xn is the thickness measurement value of the nth region.

[0167] Example 3

[0168] The Invar foil was prepared by the same preparation method as in Example 1, except that the thickness of the Invar sheet was 40 μm, the texture content was different, and it was named Invar-40-2. The difference from Example 2 was that the rolling process of the Invar sheet was different and the texture content was different.

[0169] Comparative Example 1

[0170] The Invar foil was prepared by the same preparation method as in Example 1, except that the thickness of the Invar sheet was 80 μm, the texture content was different, and it was named Invar-80. As in Example 2, the thickness uniformity of the foil after etching was measured.

[0171] Comparative Example 2

[0172] The Invar foil was prepared by the same preparation method as in Example 1, except that the thickness of the Invar sheet was 50 μm, named Invar-50, and the texture content was different. In the step of etching Invar-50 to prepare the Invar foil, the temperature of the etching solution was increased to 70° C. and the transport speed was 1 m / min.

[0173] Test Case

[0174] Channel 5 software was used to analyze the texture content of the embodiment and the comparative example, and the results of the texture content ratio are shown in Table 1. The results of whether the texture content of the embodiment and the comparative example satisfies the formula are shown in Table 1, and the results of satisfying the formula are OK, and the results of not satisfying the formula are NG; a semi-automatic contact thickness gauge was used to measure the thickness of the embodiment and the comparative example, and the thickness of the initial Invar sheet material was subtracted from the thickness of the corresponding Invar foil after etching to obtain the etching amount, and the etching amount was divided by the corresponding etching time to calculate the etching rate, and the etching rate results are shown in Table 1, and the thickness uniformity is shown in Table 1.

[0175] It can be seen from the table that the Cube texture content of Invar-25 in Example 1 is 6.2%<10%, which satisfies formulas (a) and (c), and the total content of the other four textures is 65.3%, which is about 11 times the Cube texture content, and satisfies formulas (b) and (d). Therefore, Invar-25 is an Invar sheet with a faster etching rate, and the etching rate is 7.07μm / min. Invar-25 is a sheet suitable for etching and thinning. The same etching and thinning process is performed on Invar-25 and other 25um Invar sheets whose texture contents do not satisfy the formula, and Invar-25 can obtain a thinner sheet thickness;

[0176] In Example 2, the Cube texture content of Invar-40 is 8.4%<10%, which satisfies formulas (a) and (c). The total content of the other four textures is 67.5%, which is about 8 times the Cube texture content, and satisfies formulas (b) and (d). Therefore, Invar-40 is an Invar sheet with a faster etching rate. Invar-40 is a sheet suitable for etching and thinning, and the etching rate is 7.4μm / min. The same etching and thinning process is performed on Invar-40 and other 40um Invar sheets whose texture contents do not satisfy the formula. Invar-40 can obtain a thinner sheet thickness; on the other hand, the thickness uniformity of the Invar-40 foil after etching and thinning is higher, and the thickness uniformity can reach 98.65%.

[0177] In Example 3, the Cube texture content of Invar-40-2 is 4.4%<10%, which satisfies formulas (a) and (c). The total content of the other four textures is 62.7%, which is about 14 times the Cube texture content, and satisfies conditional formulas (b) and (d). Therefore, Invar-40-2 is also suitable for etching and thinning, and the etching rate is 7.87 μm / min.

[0178] In Comparative Example 1, the Cube texture content of Invar-80 is 46.0%, which is between 10% and 60%, satisfying formula (a) but not satisfying condition (c). The total content of the other four textures is 24.6%, which is about 0.5 times the Cube texture content and does not satisfy formulas (b) & (d). Therefore, under the same etching conditions, Invar-80 is an Invar sheet with a slower etching rate, with an etching rate of 5.2μm / min. The same etching and thinning process is performed on Invar-80 and other 80μm Invar sheets whose texture contents satisfy the formula. Invar-80 can obtain a thicker sheet thickness; on the other hand, the thickness uniformity of the Invar-80 foil after etching and thinning is smaller, and the thickness uniformity reaches 93.29%, which is lower than that of Invar-40.

[0179] In Comparative Example 2, the Cube content of Invar-50 is 73.1%>60%, which does not satisfy formulas (a) and (c). The total content of the other four textures is 5.9%, which is about 0.08 times the Cube content and does not satisfy formulas (b) and (d). Therefore, it is determined that Invar-50 is an Invar sheet with a slower etching rate. In order to increase the etching rate of Invar-50 and make the etching rate of Invar-50 close to that of Examples 1 to 3, the etching parameters are adjusted, the etching solution temperature is increased by about 8%, and the transport rate is reduced by 75%. The etching rate results are shown in Table 1. The etching rate is 7.1μm / min, but this leads to increased production costs and reduced efficiency, which is not suitable for actual production.

[0180] Therefore, after etching and thinning under the same conditions, Examples 1, 2 and 3 whose texture contents satisfy formulas (a), (b), (c) and (d) at the same time have basically the same etching rate. Compared with the comparative example, the etching rate of the embodiment is higher, which improves production efficiency and reduces production cost. At the same time, the thickness uniformity of the corresponding Invar foil after thinning is also higher, which greatly improves the subsequent processability and product performance. When the texture content satisfies formula (a) but does not satisfy formulas (b), (c) and (d), the etching rate of comparative example 1 reaches 5.2 μm / min, which has a relatively slower etching rate. When the texture content does not satisfy formulas (a) to (d), comparative example 2 has a slower etching rate. If the etching parameters are adjusted to increase the corresponding etching rate, it will lead to increased production costs and reduced efficiency, which is not conducive to actual production. In addition, the thickness uniformity of the Invar foil after thinning in the comparative example is lower, which is not conducive to subsequent processing and will reduce the precision of the final product.

[0181] Table 1 Texture content and etching rate of examples and comparative examples

[0182]

[0183] From the above, it can be seen that by adopting the method for determining the etching rate of the Invar sheet of the present invention, the texture content is determined to satisfy the formula at the same time, and the corresponding Invar sheet has a faster etching rate and the foil has a higher thickness uniformity after thinning. The texture content is determined not to satisfy the formula, and the corresponding Invar sheet has a slower etching rate and the foil has a lower thickness uniformity after thinning. The cubic texture content decreases and the other texture contents increase, then the corresponding Invar sheet has a greater etching rate, and accordingly, the greater the etching amount, and the Invar sheet can be etched and thinned to obtain a thinner Invar foil more easily. At the same time, the thickness uniformity of the foil is also higher.

[0184] It will be understood by those skilled in the art that all or part of the processes in the above-mentioned embodiments can be implemented by instructing the relevant hardware through a computer program. Accordingly, the computer program can be stored in a non-volatile computer-readable storage medium, and when the computer program is executed, it can implement the method of any of the above-mentioned embodiments. Among them, any reference to memory, storage, database or other media used in the embodiments provided by the present invention may include non-volatile and / or volatile memory. Non-volatile memory may include read-only memory (ROM), programmable ROM (PROM), electrically programmable ROM (EPROM), electrically erasable programmable ROM (EEPROM) or flash memory. Volatile memory may include random access memory (RAM) or external cache memory. By way of illustration and not limitation, RAM is available in many forms, such as static RAM (SRAM), dynamic RAM (DRAM), synchronous DRAM (SDRAM), double data rate SDRAM (DDRSDRAM), enhanced SDRAM (ESDRAM), synchronous link (Synchlink) DRAM (SLDRAM), memory bus (Rambus) direct RAM (RDRAM), direct memory bus dynamic RAM (DRDRAM), and memory bus dynamic RAM (RDRAM), etc.

[0185] The above are only specific embodiments of the present invention, but the protection scope of the present invention is not limited thereto. Those skilled in the art should understand that the present invention includes but is not limited to the contents described in the drawings and the above specific embodiments. Any modification that does not deviate from the functional and structural principles of the present invention will be included in the scope of the claims.< / uvw> < / uvw>

Claims

1. A method for determining the etching rate of an Invar sheet, characterized in that: include: Determine the texture content of the initial Invar sheet; Determining an etching rate for etching the initial Invar sheet according to the texture content in the initial Invar sheet, wherein the etching rate is inversely correlated with the content of the cubic texture, the etching rate is positively correlated with the content of the reference texture, and the atomic arrangement density of the reference texture is less than the atomic arrangement density of the cubic texture; Determining an etching rate for etching the initial Invar sheet material according to the texture content in the initial Invar sheet material comprises: When the texture content in the initial Invar sheet satisfies a set condition, determining the etching rate of the initial Invar sheet to be a first etching rate; When the texture content in the initial Invar sheet does not meet the set condition, determining the etching rate of the initial Invar sheet to be a second etching rate, wherein the first etching rate is greater than the second etching rate; The setting conditions include satisfying the following formula (a) and formula (b) at the same time: Cube≤A(a); B*Cube≤Copper+Brass+Goss+S(b); Among them, Copper is a copper-type texture {112} <111> content; Brass is brass texture {110} <112> content; Goss is Gaussian texture {110} <001> content; S is S-type texture {123} <634> content; Cube is cubic texture {001} <100> content; A does not exceed 60%; B is not less than 2.

2. The etching rate determination method according to claim 1, characterized in that: The initial Invar sheet with a first etching rate is etched and thinned to become a first Invar foil, and the initial Invar sheet with a second etching rate is etched and thinned to become a second Invar foil. The thickness uniformity of the first Invar foil is greater than that of the second Invar foil.

3. The method for determining the etching rate according to claim 1, characterized in that: A shall not exceed 10%, and B shall not be less than 5.

4. The method for determining the etching rate according to claim 1, characterized in that: The reference texture includes at least one of a copper texture, a brass texture, a Gossian texture and an S-type texture.

5. The etching rate determination method according to any one of claims 1 to 4, characterized in that: The determining of the texture content of the initial Invar sheet material comprises: Acquire scanning electron microscope images of multiple specimens made from the initial Invar sheet; Identify the SEM images of each sample and determine the texture content in each sample; The texture contents of the multiple samples are averaged as the texture content of the initial Invar sheet.

6. A method for preparing an Invar foil, characterized in that: include: Provide initial Invar sheet; Determine an etching rate using the method according to any one of claims 1 to 5, wherein the etching rate includes a first etching rate and a second etching rate, and the first etching rate is greater than the second etching rate; An etching environment is provided, and the initial Invar sheet is etched according to a determined etching rate to obtain the Invar foil.

7. The preparation method according to claim 6, characterized in that: The Invar foil includes a first Invar foil and a second Invar foil, the first Invar foil corresponds to the first etching rate, the second Invar foil corresponds to the second etching rate, and the thickness of the first Invar foil is less than the thickness of the second Invar foil.

8. The preparation method according to claim 6, characterized in that: The step of providing an etching environment and etching the initial Invar sheet material according to a determined etching rate comprises: A plurality of rows of spray pipes are used to spray etching liquid onto the initial Invar sheet, wherein the plurality of rows of spray pipes are distributed along the length direction of the initial Invar sheet, the spray pressure is between 0.05Mpa and 2Mpa, the placement angle between adjacent rows of the spray pipes is between 0° and 15°, the rotation angle of the spray pipe around its own axis is between 0° and 45°, and the rotation speed of the spray pipe is between 60rpm and 100rpm.

9. The preparation method according to claim 8, characterized in that: The spray pipe is provided with a plurality of nozzles distributed along the length direction of the initial Invar sheet material, and the nozzles are rotated at an angle between 0° and 15° along the width direction of the initial Invar sheet material.

10. The preparation method according to claim 8, characterized in that: The providing of the etching environment and etching the initial Invar sheet material according to the determined etching rate also includes: When the redox potential of the etching solution is less than 500 mV, the etching solution is replaced.

11. The preparation method according to any one of claims 6 to 10, characterized in that: The initial Invar sheet is placed on a transmission unit, which is used to carry and transport the initial Invar sheet. The initial Invar sheet is etched under the drive of the transmission unit, and the transportation speed of the initial Invar sheet driven by the transmission unit is between 0.5m / min and 8m / min.

12. The preparation method according to any one of claims 6 to 10, characterized in that: The thickness of the initial Invar sheet is between 20 μm and 100 μm.

13. The preparation method according to claim 12, characterized in that: The thickness of the Invar foil is between 10 μm and 50 μm.

14. An electronic device, characterized in that: The electronic device comprises: one or more processors; A memory having one or more computer programs stored thereon, wherein when the one or more computer programs are executed by the one or more processors, the one or more processors implement the determination method according to any one of claims 1 to 5.

15. A computer readable medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the determination method according to any one of claims 1 to 5 is implemented.

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