A new semiconductor test probe card manufacturing process
By simplifying the MEMS probe card manufacturing process, using dry etching to form a probe and making a metal column on a silicon substrate, the problems of complex process and low production capacity in the existing technology are solved, the uniformity and yield of the probe are improved, and the simplification of the simplification Process flow and cost savings.
Patent Information
- Application Number
- CN202411426456.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-14
- Publication Date
- 2024-12-31
- Estimated Expiration
- 2044-10-14
AI Technical Summary
The existing MEMS probe card has complex manufacturing process, low production capacity, and difficult to control the angle of the probe tip, which affects the yield.
Using a simplified process flow, first plate the first metal layer and the second metal layer on the silicon substrate, and the probe is formed by dry etching, eliminating multiple wet etching, bonding, physical vapor-phase coating and chemical mechanical grinding steps. Control the probe tip angle, make metal columns on the silicon substrate during packaging and bond to the ceramic substrate.
It improves the uniformity and yield of the probe, simplifies the manufacturing and packaging process flow, increases production capacity, saves costs, reduces the number of lithography machines, and breaks through the limitations of lithography machine production capacity.
Smart Images
Figure CN118962209B_ABST
Abstract
Description
Technical Field
[0001] The invention belongs to the technical field of semiconductors, and in particular relates to a novel manufacturing process of a semiconductor test probe card. Background Art
[0002] A probe card is a key device used for electronic testing and analysis. It consists of multiple probes that can test and analyze the electrical performance of a circuit or device by contacting the contact points of the circuit or device to be tested. Probe cards are widely used in the research and development and manufacturing of integrated circuits, PCB circuits, new electronic devices, and other fields.
[0003] MEMS probe card is a new type of probe card manufactured using micro-electromechanical system (MEMS) technology. It has the following main features: (1) Ultra-high probe density. MEMS probes use micromachining technology to integrate more than 100,000 needles in one probe card to meet the testing needs of electronic devices; (2) Excellent contact performance. The MEMS probe tip has a fine shape and the tip diameter can be as small as a few microns. Within a tiny contact area, the MEMS probe can provide stable and reliable contact force and electrical contact, greatly improving the test accuracy; (3) Integrated manufacturing. The entire MEMS probe array can be manufactured using batch micromachining, which improves the consistency and reliability of the probe array; (4) Tiny size.
[0004] The specific process of the current MEMS probe card manufacturing method is as follows: first coat the silicon substrate with a layer of oxide and then clean it, then apply glue, photolithography, and develop to obtain a pattern, dry etch the silicon substrate and clean it to obtain the groove body morphology, then optimize its needle angle through wet etching, and then use physical vapor deposition to perform multiple physical coatings on the groove body, and then perform chemical electroplating to fill the groove body with metal after cleaning, applying glue, photolithography, and developing to obtain a pattern, and then perform multiple chemical grindings, and bond a layer of glass on the front side, and finally dry etch the back side to remove the silicon material near the metal, and then remove the original bonded glass to obtain the probe. Then, the silicon substrate around the probe is removed by dry etching, and the metal columnar object that can be connected to the probe is obtained after multiple glue coating, photolithography, development, wet etching, electrochemical plating, and chemical grinding on the existing ceramic substrate, and then the probe and the ceramic substrate are bonded together through a bonding process, and finally, the remaining silicon substrate and the metal in the silicon substrate are removed by wet etching to complete the probe card. However, the existing manufacturing process involves many steps, has low production capacity, and the angle of the probe tip is difficult to control, which affects the probe yield. Summary of the invention
[0005] The technical problem to be solved by the present invention is to provide a novel semiconductor test probe card manufacturing process, simplify the process flow, improve production capacity, and be able to well control the probe tip angle and improve the probe yield.
[0006] In order to solve the above technical problems, the present invention provides a novel semiconductor test probe card manufacturing process, including a probe manufacturing process and a probe packaging process;
[0007] The probe manufacturing process specifically includes the following steps:
[0008] Step 1, growing a first metal layer on a silicon substrate;
[0009] Step 2, coating a first photoresist layer on the first metal layer, photolithography and developing a first preset position of the first photoresist layer to form a probe growth position;
[0010] Step 3, growing a second metal layer on the silicon substrate at the probe growth position by electroplating;
[0011] Step 4, removing the first photoresist layer and then cleaning;
[0012] Step 5, growing a silicon oxide layer on the first metal layer and the second metal layer;
[0013] Step 6, coating a second photoresist layer on the silicon oxide layer, photolithography and developing a second preset position of the second photoresist layer to form an etched position of the probe beam;
[0014] Step 7, dry etching the silicon oxide layer directly below the etching position of the probe beam;
[0015] Step 8, partially dry-etching the second metal layer directly below the etching position of the probe beam to form a probe beam;
[0016] Step 9, removing the second photoresist layer and then cleaning;
[0017] Step 10, removing the silicon oxide layer and then cleaning;
[0018] Step 11, coating a third photoresist layer on the first metal layer and the second metal layer, photolithography and developing a third preset position of the third photoresist layer to form a probe needle corner etching position;
[0019] Step 12, partially etching the second metal layer directly below the probe needle corner etching position to form a probe needle tip;
[0020] Step 13, removing the third photoresist layer and then cleaning to obtain a first intermediate product; the first intermediate product includes a silicon substrate, a first metal layer covering the top surface of the silicon substrate, and a probe formed on the top surface of the first metal layer;
[0021] The probe packaging process specifically includes the following steps:
[0022] Step 14, filling a glue layer on the top surface of the first intermediate product;
[0023] Step 15, bonding a glass plate on the top surface of the glue layer to obtain a second intermediate product;
[0024] Step 16, turning over the second intermediate product so that the silicon substrate is located at the top of the second intermediate product;
[0025] Step 17, coating a fourth photoresist layer on the top surface of the silicon substrate, photolithography and developing a fourth preset position of the fourth photoresist layer to form a metal column etching position;
[0026] Step 18, etching the silicon substrate directly below the metal column etching position;
[0027] Step 19, etching the first metal layer directly below the metal column etching position to form a metal column growth position;
[0028] Step 20, growing a metal column at the metal column growth position by using an electroplating method;
[0029] Step 21, removing the fourth photoresist layer and then washing to obtain a third intermediate product;
[0030] Step 22, turning over the third intermediate product so that the glass plate is located on the top of the third intermediate product;
[0031] Step 23, removing the glass plate;
[0032] Step 24, removing the glue layer;
[0033] Step 25, bonding the metal pillar to the ceramic substrate;
[0034] Step 26, etching the first metal layer to remove the silicon substrate 1 to obtain a probe card.
[0035] As a further improvement of the present invention, in step 12, according to a preset needle angle, a dry etching trench process is used to partially etch the second metal layer below the probe needle angle etching position to form a probe needle.
[0036] As a further improvement of the present invention, in step 5, the silicon oxide layer covers the entire top surface of the first metal layer and the entire top surface of the second metal layer;
[0037] In step 6, the second photoresist layer covers the entire top surface of the silicon oxide layer; and the etching position of the probe beam is located directly above the second metal layer.
[0038] As a further improvement of the present invention, in step 11, the third photoresist layer covers the entire top surface of the first metal layer and the entire top surface of the second metal layer; and the probe needle corner etching position is located directly above the second metal layer.
[0039] As a further improvement of the present invention, in step 14, the top surface height of the glue layer is consistent.
[0040] As a further improvement of the present invention, in step 17, the metal column etching position is located directly above the probe.
[0041] As a further improvement of the present invention, in step 20, the top surface of the metal column is higher than the top surface of the silicon substrate.
[0042] As a further improvement of the present invention, in step 18, the silicon substrate directly below the metal column etching position is dry-etched.
[0043] As a further improvement of the present invention, in step 19, the first metal layer directly below the metal column etching position is wet etched.
[0044] As a further improvement of the present invention, in step 26, the first metal layer is wet-etched.
[0045] Compared with the prior art, the technical solution of the present invention has the following beneficial effects:
[0046] The present invention provides a novel semiconductor test probe card manufacturing process. When manufacturing the probe, the first metal layer and the second metal layer are first plated on the silicon substrate in sequence, and then the second metal layer is etched by a dry etching method to form the probe. When the second metal layer is dry-etched, the probe tip angle can be better controlled, the uniformity of the probe is improved, and the probe yield is improved. The manufacturing process of the probe eliminates multiple wet etching steps, the bonding process steps, the physical vapor coating step, and the chemical mechanical grinding step, simplifies the probe manufacturing process, improves production capacity, and saves costs. When encapsulating the probe, a metal column connected to the probe is made on the silicon substrate, and then the metal column and the ceramic substrate are bonded together through a bonding process, and finally the silicon substrate is removed. In the process of encapsulating the probe, there is only one process of coating, photolithography, and development, which eliminates multiple processes of coating, photolithography, and development. There is only one process of electrochemical plating, which eliminates multiple electrochemical plating processes, and also eliminates the chemical grinding process, which simplifies the process and improves production capacity. The process of encapsulating the probe reduces the number of photolithography machines used for ceramic substrates, saves costs, and breaks through the limitation of the production capacity of photolithography machines. BRIEF DESCRIPTION OF THE DRAWINGS
[0047] Figure 1 is a flow chart of a probe manufacturing process in a novel semiconductor test probe card manufacturing process according to an embodiment of the present invention;
[0048] Figure 2 The present invention is a flowchart of a probe packaging process in a novel semiconductor test probe card manufacturing process according to an embodiment of the present invention.
[0049] The figure includes: silicon substrate 1, first metal layer 2, first photoresist layer 3, probe growth position 31, second metal layer 4, silicon oxide layer 5, second photoresist layer 6, probe beam etching position 61, third photoresist layer 7, probe needle corner etching position 71, probe beam 81, probe needle head 82, probe 8, glue layer 9, glass plate 10, fourth photoresist layer 11, metal column etching position 111, metal column growth position 23, metal column 12, and ceramic substrate 13. DETAILED DESCRIPTION
[0050] The technical solution of the present invention is described in detail below with reference to the accompanying drawings.
[0051] The terms "first", "second", "third", "fourth", etc. in the specification and claims of this application and the above-mentioned drawings are used to distinguish different objects rather than to describe a specific order.
[0052] The embodiment of the present invention provides a novel semiconductor test probe card manufacturing process, including: Figure 1 The probe manufacturing process shown in Figure 2 The probe packaging process is shown.
[0053] like Figure 1 As shown, the probe manufacturing process specifically includes the following steps:
[0054] Step 1: clean the silicon substrate 1, and use physical vapor deposition to deposit a first metal layer 2 on the silicon substrate 1. Preferably, the first metal layer 2 covers the entire top surface of the silicon substrate 1.
[0055] Step 2, coating the first photoresist layer 3 on the first metal layer 2, photolithography and developing the first preset position of the first photoresist layer 3, and forming a probe growth position 31. The bottom surface of the probe growth position 31 is the top surface of the first metal layer 2, and the first photoresist layer 3 is surrounded by the probe growth position 31.
[0056] Step 3: grow the second metal layer 4 on the first metal layer 2 at the probe growth position 31 by electroplating. The second metal layer 4 fills up the probe growth position 31 .
[0057] Due to the existence of the first photoresist layer 3, the second metal layer 4 is grown only at the probe growth position 31 during electroplating.
[0058] Step 4: Use a photoresist remover to remove the first photoresist layer 3 and then clean it.
[0059] Step 5: Use chemical vapor deposition equipment to deposit a silicon oxide layer 5 on the first metal layer 2 and the second metal layer 4. Preferably, the silicon oxide layer 5 covers the entire top surface of the first metal layer 2 and the entire top surface of the second metal layer 4.
[0060] Step 6: coating a second photoresist layer 6 on the silicon oxide layer 5 , photolithography and developing the second preset position of the second photoresist layer 6 , and forming a probe beam etching position 61 .
[0061] Preferably, the second photoresist layer 6 covers the entire top surface of the silicon oxide layer 5 ; the probe beam etching position 61 is located directly above the second metal layer 4 , and the probe beam etching position 61 is only a portion of the second photoresist layer 6 located above the second metal layer.
[0062] Step 7, dry-etching the silicon oxide layer below the probe beam etching position 61. Specifically, a dry etcher is used to completely etch away the silicon oxide layer below the probe beam etching position 61.
[0063] Step 8, partially dry-etching the second metal layer below the probe beam etching position 61 to form the probe beam 81. Specifically, a dry etcher is used to etch away a portion of the second metal layer below the probe beam etching position 61, leaving a portion of the thickness to form the probe beam 81.
[0064] Since the probe beam 81 needs to be formed, the second metal layer needs to be dry-etched for a long time. If only one photoresistor layer is coated on the second metal layer 4 and the first metal layer 2, the blocking ability of the photoresistor layer is limited and cannot effectively protect the first metal layer and the second metal layer from forming the probe beam. In the above steps 5 to 8, a silicon oxide layer 5 is first plated on the first metal layer 2 and the second metal layer 4, and then a second photoresist layer 6 is coated on the silicon oxide layer 5. Due to the presence of the silicon oxide layer 5 and the second photoresist layer 6, the dry etcher only etches the second metal layer directly below the probe beam etching position 61. Compared with a single photoresist layer, the anti-blocking ability is enhanced to protect the first metal layer and the second metal layer below the double layer of the second photoresist layer 6 and the silicon oxide layer 5.
[0065] Step 9, using a photoresist remover to remove the second photoresist layer 6 and then cleaning.
[0066] Step 10: Use a dry etching machine to completely etch away the silicon oxide layer 5, thereby removing the silicon oxide layer 5 and then cleaning.
[0067] Step 11, coating the third photoresist layer 7 on the first metal layer 2 and the second metal layer 4, photolithography and developing the third preset position of the third photoresist layer, and forming the probe needle corner etching position 71. The probe needle corner etching position 71 is located in the upper side circumference of the unetched portion of the second metal layer 4. Preferably, the third photoresist layer 7 covers the entire top surface of the first metal layer 2 and the entire top surface of the second metal layer 4; the probe needle corner etching position 71 is located directly above the second metal layer 4.
[0068] Step 12, partially etching the second metal layer below the probe needle corner etching position 71 to form a probe needle head 82. Specifically, according to the preset needle head angle, a dry etcher is used to partially etch the metal layer below the probe needle corner etching position 71 using a trench process to form a probe needle head 82. The probe needle head 82 prepared in this step and the probe crossbeam 81 prepared in step 8 form an integrated structure to form a probe 8.
[0069] The third photoresist layer 7 protects the second metal layer and the first metal layer below the third photoresist layer 7, preventing the second metal layer and the first metal layer below the third photoresist layer 7 from being etched by the dry etcher. The dry etcher only partially etches the second metal layer directly below the probe needle corner etching position 71.
[0070] Step 13, remove the third photoresist layer 7 by a photoresist remover and then clean it to obtain a first intermediate product. The first intermediate product includes a silicon substrate 1, a first metal layer 2 covering the top surface of the silicon substrate 1, and a probe 8 formed on the top surface of the first metal layer 2.
[0071] like Figure 2 As shown, the probe packaging process specifically includes the following steps:
[0072] Step 14: Fill the top surface of the first intermediate product with a glue layer 9. The glue layer 9 covers the probe 8 and the first metal layer 2. Preferably, the top surface of the glue layer 9 has a uniform height, that is, the top surface of the glue layer 9 is horizontal.
[0073] Step 15, bonding the glass plate 10 on the top surface of the glue layer 9 to obtain a second intermediate product.
[0074] Step 16, flip the second intermediate product over so that the probe 8 is located below the silicon substrate 1. After flipping, the side of the silicon substrate 1 that is not covered with the first metal layer becomes the top surface of the silicon substrate.
[0075] Step 17 , coating a fourth photoresist layer 11 on the top surface of the silicon substrate 1 , photolithography and developing a fourth preset position of the fourth photoresist layer 11 to form a metal column etching position 111 .
[0076] The metal column etching position 111 is located directly above the probe 8 . The bottom surface of the metal column etching position 111 is the top surface of the silicon substrate 1 , and the fourth photoresist layer 11 is surrounded by the metal column etching position 111 .
[0077] Step 18 , etching the silicon substrate 1 directly below the metal column etching position 111 .
[0078] Preferably, the silicon substrate 1 directly below the metal column etching position 111 is dry-etched.
[0079] Due to the existence of the fourth photoresist layer 11 , only the silicon substrate 1 directly below the metal column etching position 111 is etched during etching.
[0080] Step 19, etching the first metal layer 2 directly below the metal column etching position 111 to form a metal column growth position 23.
[0081] Preferably, the first metal layer 2 directly below the metal column etching position 111 is wet etched.
[0082] The bottom surface of the metal column growth position 23 is the top surface of the probe 8 , and the surroundings of the metal column growth position 23 are the first metal layer 2 , the silicon substrate 1 and the fourth photoresist layer 11 from bottom to top.
[0083] Step 20 , growing a metal column 12 at the metal column growth position 23 by electroplating. The top surface of the metal column 12 is higher than the top surface of the silicon substrate 1 .
[0084] Due to the presence of the fourth photoresist layer 11 , the metal pillars 12 are grown only at the metal pillar growth positions 23 during electroplating.
[0085] Step 21, removing the fourth photoresist layer 11 and then cleaning to obtain a third intermediate product.
[0086] In the above steps 14 and 15, the glue layer 9 is filled on the top surface of the first intermediate product and the glass plate 10 is bonded, which serves as a support structure for the probe after flipping in step 16. The top surface of the glue layer 9 is horizontal before flipping, and the top surface of the glass plate is also horizontal. Then, the bottom surface of the glass plate is horizontal after flipping, so that the top surface of the silicon substrate is horizontal after flipping, which facilitates the dry etching of the silicon substrate 1 directly below the metal column etching position 111 in step 19.
[0087] Step 22, flip the third intermediate product so that the probe 8 is located above the silicon substrate 1. After flipping, the surface of the metal column opposite to the surface connected to the probe becomes the bottom surface of the metal column.
[0088] Step 23, removing the glass plate 10.
[0089] Step 24, removing the glue layer 9.
[0090] Step 25 , bonding the bottom surface of the metal pillar 12 to the top surface of the metal layer on the top surface of the ceramic substrate 13 .
[0091] Step 26, etching the first metal layer 2 to remove the silicon substrate 1 to obtain a probe card.
[0092] Preferably, the first metal layer 2 is wet etched.
[0093] Since the first metal layer 2 is grown on the silicon substrate 1 in step 1, this step only requires etching the first metal layer 2. After the first metal layer 2 is completely etched away, the silicon substrate 1 automatically falls off and is removed.
[0094] The novel semiconductor test probe card manufacturing process of the embodiment of the present invention is to first plate a first metal layer on a silicon substrate, and then grow a probe so that the first metal layer is located between the probe and the silicon substrate. Step 26 only requires etching the first metal layer. When the first metal layer is completely etched away, the silicon substrate 1 automatically falls off without etching the silicon substrate. The thinner metal layer is easier to etch than the silicon substrate, thereby simplifying the process and improving production capacity.
[0095] The novel semiconductor test probe card manufacturing process of the embodiment of the present invention is to plate a second metal layer on the first metal layer when manufacturing the probe, and then use a dry etching method to etch the second metal layer to form the probe, thereby eliminating multiple wet etching steps, bonding process steps, physical vapor coating steps, and chemical mechanical polishing steps, simplifying the process flow, improving production capacity, and saving costs. The method of this embodiment uses a dry etching groove process to etch the second metal layer, which can better control the probe tip angle, improve the uniformity of the probe, and improve the probe yield.
[0096] The novel semiconductor test probe card manufacturing process of the embodiment of the present invention makes a metal column connected to the probe on the silicon substrate when encapsulating the probe, then bonds the metal column to the ceramic substrate through a bonding process, and finally removes the silicon substrate. Compared with the existing method of making metal columns on a ceramic substrate, the process flow of the present invention has only one step of glue coating, photolithography, and development, eliminating multiple steps of glue coating, photolithography, and development, and only one step of electrochemical plating, eliminating multiple steps of electrochemical plating, and also eliminating the chemical grinding step, simplifying the process flow and improving production capacity.
[0097] The novel semiconductor test probe card manufacturing process of the embodiment of the present invention makes metal pillars on the silicon substrate when packaging the probes, and only performs one process of glue coating, photolithography, and development on the silicon substrate, while the existing method makes metal pillars on a ceramic substrate, and performs multiple processes of glue coating, photolithography, and development on the ceramic substrate. Compared with the existing method, the process flow of the present invention reduces the number of photolithography machines used for ceramic substrates, saving costs; at the same time, it eliminates multiple processes of glue coating, photolithography, and development, breaking through the limitation of the production capacity of the photolithography machine.
[0098] The above description is only a specific implementation mode of the present invention, but the protection scope of the present invention is not limited thereto. Any changes or substitutions that can be easily conceived by a technician familiar with the technical field within the technical scope disclosed by the present invention should be covered within the protection scope of the present invention.
Claims
1. A novel semiconductor test probe card manufacturing process, characterized in that: Including probe manufacturing process and probe packaging process; The probe manufacturing process specifically includes the following steps: Step 1, growing a first metal layer (2) on a silicon substrate (1); Step 2, coating a first photoresist layer (3) on the first metal layer (2), photolithography and developing a first preset position of the first photoresist layer (3), to form a probe growth position (31); Step 3, growing a second metal layer (4) on the silicon substrate (1) at the probe growth position (31) by using an electroplating method; Step 4, removing the first photoresist layer (3) and then cleaning; Step 5, growing a silicon oxide layer (5) on the first metal layer (2) and the second metal layer (4); Step 6, coating a second photoresist layer (6) on the silicon oxide layer (5), photolithography and developing a second preset position of the second photoresist layer (6) to form a probe beam etching position (61); Step 7, dry etching the silicon oxide layer directly below the probe beam etching position (61); Step 8, performing partial dry etching on the second metal layer directly below the probe beam etching position (61) to form a probe beam (81); Step 9, removing the second photoresist layer (6) and then cleaning; Step 10, removing the silicon oxide layer (5) and then cleaning; Step 11, coating a third photoresist layer (7) on the first metal layer (2) and the second metal layer (4), photolithography and developing a third preset position of the third photoresist layer (7) to form a probe needle corner etching position (71); Step 12, partially etching the second metal layer directly below the probe needle corner etching position (71) to form a probe needle tip (82); Step 13, removing the third photoresist layer (7) and then cleaning to obtain a first intermediate product; the first intermediate product comprises a silicon substrate (1), a first metal layer (2) covering the top surface of the silicon substrate (1), and a probe (8) formed on the top surface of the first metal layer (2); The probe packaging process specifically includes the following steps: Step 14, filling a glue layer (9) on the top surface of the first intermediate product; Step 15, bonding a glass plate (10) on the top surface of the glue layer (9) to obtain a second intermediate product; Step 16, turning over the second intermediate product so that the silicon substrate (1) is located at the top of the second intermediate product; Step 17, coating a fourth photoresist layer (11) on the top surface of the silicon substrate (1), photolithography and developing a fourth preset position of the fourth photoresist layer (11), to form a metal column etching position (111); Step 18, etching the silicon substrate (1) directly below the metal column etching position (111); Step 19, etching the first metal layer (2) directly below the metal column etching position (111) to form a metal column growth position (23); Step 20, growing a metal column (12) at the metal column growth position (23) by using an electroplating method; Step 21, removing the fourth photoresist layer (11) and then washing to obtain a third intermediate product; Step 22, turning over the third intermediate product so that the glass plate (10) is located at the top of the third intermediate product; Step 23, removing the glass plate (10); Step 24, removing the glue layer (9); Step 25, bonding the metal pillar (12) to the ceramic substrate (13); Step 26, etching the first metal layer (2) to remove the silicon substrate (1) to obtain a probe card.
2. The novel semiconductor test probe card manufacturing process according to claim 1 is characterized in that: In step 12, according to the preset needle tip angle, a dry etching trench process is used to partially etch the second metal layer directly below the probe needle angle etching position (71) to form a probe needle tip (82).
3. The novel semiconductor test probe card manufacturing process according to claim 1 is characterized in that: In the step 5, the silicon oxide layer (5) covers the entire top surface of the first metal layer (2) and the entire top surface of the second metal layer (4); In step 6, the second photoresist layer (6) covers the entire top surface of the silicon oxide layer (5); and the probe beam etching position (61) is located directly above the second metal layer (4).
4. The novel semiconductor test probe card manufacturing process according to claim 1, characterized in that: In the step 11, the third photoresist layer (7) covers the entire top surface of the first metal layer (2) and the entire top surface of the second metal layer (4); and the probe needle corner etching position (71) is located directly above the second metal layer (4).
5. The novel semiconductor test probe card manufacturing process according to claim 1 is characterized in that: In step 14, the top surface height of the glue layer (9) is consistent.
6. The novel semiconductor test probe card manufacturing process according to claim 1, characterized in that: In step 17, the metal column etching position (111) is located directly above the probe.
7. The novel semiconductor test probe card manufacturing process according to claim 1, characterized in that: In the step 20, the top surface of the metal pillar (12) is higher than the top surface of the silicon substrate (1).
8. The novel semiconductor test probe card manufacturing process according to claim 1, characterized in that: In step 18, dry etching is performed on the silicon substrate (1) directly below the metal column etching position (111).
9. The novel semiconductor test probe card manufacturing process according to claim 1, characterized in that: In step 19, the first metal layer (2) directly below the metal column etching position (111) is wet etched.
10. The novel semiconductor test probe card manufacturing process according to claim 1, characterized in that: In step 26, the first metal layer (2) is wet etched.