Epitaxial growth system

Abstract

The present application relates to the technical field of epitaxial growth, and specifically provides an epitaxial growth system, which includes: a reaction chamber, which has an exhaust pipe and an air pressure detection component; a first vacuum pipe, in which a simple filter is arranged; a second vacuum pipe, on which a second switch valve, a butterfly valve and a dry pump are arranged in sequence along the gas flow direction; a third vacuum pipe, on which a third switch valve and a dust filter are arranged; a first purge component; a controller, which is used to control the first switch valve and the second switch valve to close and the third switch valve to open when the difference between the reaction chamber air pressure information and the preset air pressure information is greater than or equal to a preset error, and control the first purge component to purge the simple filter until the continuous purge time of the first purge component reaches a first preset time, and then control the epitaxial growth system to recover; it can effectively solve the problem of low growth efficiency of the reaction chamber due to the long time required for maintenance of the dust filter.

Description

Technical Field

[0001] The present application relates to the technical field of epitaxial growth, and in particular, to an epitaxial growth system. Background Art

[0002] The related technology usually uses chemical vapor deposition to grow a high-quality epitaxial film on a substrate. Taking the growth of silicon carbide film on a silicon carbide substrate as an example, the silicon source and the carbon source will decompose at high temperature to form by-products. The by-products need to be discharged to the exhaust gas treatment equipment through the exhaust pipe using a dry pump for exhaust gas treatment. In order to stabilize the air pressure in the reaction chamber near the preset air pressure, the related technology needs to use a butterfly valve arranged on the exhaust pipe to adjust the air pressure in the reaction chamber.

[0003] In order to avoid the situation that the pressure regulation accuracy of the reaction chamber gradually decreases due to excessive by-products deposited on the butterfly valve, the pressure of the reaction chamber cannot be controlled, the butterfly valve is damaged, and a large amount of by-products are directly discharged into the dry pump, and the nitrogen purge function of the dry pump cannot discharge the by-products in time, resulting in the need for frequent maintenance of the dry pump, the related art sets a filtering device in front of the butterfly valve, and the filtering device is usually a dust filter. However, as the by-products in the dust filter increase, the flow smoothness of the exhaust gas in the dust filter decreases. At this time, the butterfly valve cannot be used to accurately adjust the pressure of the reaction chamber. Therefore, the related art needs to regularly remove the dust filter and maintain the dust filter. When the dust filter is disassembled and installed and maintained, the reaction chamber cannot perform the epitaxial growth process, and the time required for disassembling and installing the dust filter and maintaining the dust filter is long. Therefore, the related art also has the problem of low growth efficiency of the reaction chamber due to the long time required to maintain the filtering device for filtering the by-products in the exhaust gas.

[0004] There is no effective technical solution to the above problems. It should be noted that the above information disclosed in this section is only used to understand the background of the present invention, and therefore may contain information that does not constitute prior art. Summary of the invention

[0005] The purpose of the present application is to provide an epitaxial growth system that can effectively solve the problem of low growth efficiency in a reaction chamber due to the long time required for maintaining a dust filter.

[0006] The present application provides an epitaxial growth system, which includes:

[0007] A reaction chamber, which has an exhaust pipe and an air pressure detection component, the exhaust pipe is provided with a first switch valve, and the air pressure detection component is used to collect air pressure information of the reaction chamber;

[0008] A first vacuum pipeline, the input end of which is connected to the exhaust pipe and a simple filter is arranged inside the first vacuum pipeline;

[0009] A second vacuum pipeline, the input end of which is connected to the output end of the first vacuum pipeline, and a second switch valve, a butterfly valve and a dry pump are arranged in sequence along the gas flow direction;

[0010] a third vacuum pipeline, the input end of which is connected to the output end of the first vacuum pipeline, and a third switch valve and a dust filter are arranged on the third vacuum pipeline, wherein the third switch valve is located in front of the input end of the dust filter;

[0011] A first purge assembly is installed on the first vacuum pipe and is located in front of the input end of the simple filter;

[0012] The controller is used to perform PID control on the butterfly valve according to the reaction chamber air pressure information and the preset air pressure information during the epitaxial growth process, and is also used to control the reaction chamber to stop the epitaxial growth process, control the first switch valve and the second switch valve to close and control the third switch valve to open when the difference between the reaction chamber air pressure information and the preset air pressure information is greater than or equal to the preset error, and control the first purge component to purge the simple filter until the continuous purge time of the first purge component reaches the first preset time, so as to blow the dust on the simple filter into the dust filter, and then control the epitaxial growth system to recover.

[0013] An epitaxial growth system provided by the present application can utilize a simple filter to filter most of the by-products in the exhaust gas, that is, the present application can effectively reduce the content of by-products in the exhaust gas in contact with the butterfly valve and the dry pump by setting a simple filter. When the difference between the reaction chamber air pressure information and the preset air pressure information is greater than or equal to the preset error, the present application blows the by-products on the simple filter into the dust filter through the cooperation of the first switch valve, the second switch valve, the third switch valve and the first purge assembly, that is, the present application is equivalent to maintaining the simple filter by purging the simple filter, that is, the present application does not need to install and disassemble the simple filter, and the time required for maintaining the simple filter is less than the time required for maintaining the dust filter. Therefore, the present application can effectively solve the problem of low growth efficiency of the reaction chamber due to the long time required to maintain the filtering device for filtering the by-products in the exhaust gas.

[0014] Optionally, the output end of the third vacuum pipe is connected to the input end of the dry pump, the epitaxial growth system further includes a fourth switch valve, the fourth switch valve is installed on the third vacuum pipe and is located behind the output end of the dust filter, and when the difference between the reaction chamber air pressure information and the preset air pressure information is greater than or equal to a preset error, the controller controls the reaction chamber to stop the epitaxial growth process, controls the first switch valve and the second switch valve to close, controls the third switch valve to open, and controls the first purge component to purge the simple filter. The process includes:

[0015] When the difference between the reaction chamber pressure information and the preset pressure information is greater than or equal to a preset error, the reaction chamber is controlled to stop the epitaxial growth process, the first switch valve and the second switch valve are controlled to close, and the third switch valve and the fourth switch valve are controlled to open;

[0016] The first purge component is controlled to purge the simple filter, and the dry pump is controlled to evacuate the dust filter.

[0017] Because when the difference between the reaction chamber air pressure information and the preset air pressure information is greater than or equal to the preset error, the technical solution first controls the first switch valve and the second switch valve to close and controls the third switch valve and the fourth switch valve to open, and then controls the first purge assembly to purge the simple filter, and controls the dry pump to evacuate the dust filter. The technical solution can increase the flow rate of the purge gas and enable all blown-off by-products to be collected by the dust filter by utilizing the dry pump to evacuate the dust filter. Therefore, the technical solution can effectively enhance the cleaning effect of the by-products attached to the simple filter and effectively avoid the situation in which the by-products remaining in the first vacuum pipe are blown to the butterfly valve when the epitaxial growth process is continued due to part of the blown-off by-products remaining in the first vacuum pipe, thereby increasing the deposition amount of by-products on the butterfly valve.

[0018] Optionally, the epitaxial growth system further includes a fifth switch valve, which is installed on the second vacuum pipeline and located between the confluence of the second vacuum pipeline and the third vacuum pipeline and the input end of the dry pump.

[0019] Optionally, the diameter of the first vacuum pipe is larger than the diameter of the exhaust pipe.

[0020] Optionally, an end of the first vacuum duct close to the exhaust pipe has an expansion section expanding toward the first vacuum duct.

[0021] This technical solution is equivalent to setting a transition area between the first vacuum pipe and the exhaust pipe, so this technical solution can effectively avoid the airflow turbulence caused by the sudden change of the pipe diameter at the connection between the exhaust pipe and the first vacuum pipe, and the expansion section of this technical solution can play a role in uniform flow, so this technical solution can make the exhaust gas evenly distributed in the first vacuum pipe, thereby effectively improving the filtering effect of the simple filter.

[0022] Optionally, the epitaxial growth system also includes a second purge assembly, which is installed on the second vacuum pipe and located at the input end of the butterfly valve. The controller is also used to control the second purge assembly to purge the butterfly valve when the difference between the reaction chamber air pressure information and the preset air pressure information is greater than or equal to a preset error or the epitaxial growth process is completed, until the continuous purge time of the second purge assembly reaches a second preset time.

[0023] Since when the difference between the reaction chamber air pressure information and the preset air pressure information is greater than or equal to the preset error or the epitaxial growth process is completed, the technical solution promptly removes the by-products deposited on the butterfly valve by using the second purge assembly to purge the butterfly valve. Therefore, the technical solution can further avoid the decrease in the air pressure regulation accuracy of the reaction chamber due to the increase in the deposition of by-products on the butterfly valve, the uncontrollable air pressure of the reaction chamber, and the damage of the butterfly valve due to excessive by-products deposited on the butterfly valve.

[0024] Optionally, the simple filter includes a mounting bracket and multiple filter plates, the multiple filter plates are arranged on the mounting bracket at intervals, when the epitaxial growth process is carried out in the reaction chamber, the filter plates are perpendicular to the flow direction of the exhaust gas in the reaction chamber, and each filter plate is provided with multiple through holes.

[0025] Optionally, the density of the through holes near the center of the filter plate is greater than that away from the center of the filter plate.

[0026] Optionally, the epitaxial growth system further includes a rotating assembly, which is mounted on the first vacuum pipe and connected to the mounting bracket. The controller is also used to control the rotating assembly to drive the mounting bracket to rotate when controlling the first purge assembly to purge the simple filter.

[0027] Because when controlling the first purge component to purge the simple filter, the technical solution controls the rotating component to drive the mounting bracket to rotate at high speed, that is, the technical solution is equivalent to enabling all surfaces of the simple filter to be purged. Therefore, the technical solution can effectively solve the problem of dead corners in purge caused by the inability to purge some surfaces of the simple filter due to static purge of the simple filter. The technical solution can also utilize the centrifugal force generated during high-speed rotation to further improve the cleaning effect of the simple filter, thereby effectively improving the purge effect of the simple filter.

[0028] Optionally, the through holes of adjacent filter plates are staggered.

[0029] From the above, it can be seen that the epitaxial growth system provided by the present application can use a simple filter to filter most of the by-products in the exhaust gas, that is, the present application can effectively reduce the content of by-products in the exhaust gas in contact with the butterfly valve and the dry pump by setting a simple filter. When the difference between the reaction chamber air pressure information and the preset air pressure information is greater than or equal to the preset error, the present application blows the by-products on the simple filter into the dust filter through the cooperation of the first switch valve, the second switch valve, the third switch valve and the first purge assembly, that is, the present application is equivalent to maintaining the simple filter by purging the simple filter, that is, the present application does not need to install and disassemble the simple filter, and the time required for maintenance of the simple filter is less than the time required for maintenance of the dust filter. Therefore, the present application can effectively solve the problem of low growth efficiency of the reaction chamber due to the long time required to maintain the filtering device for filtering the by-products in the exhaust gas. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 A schematic diagram of the structure of an epitaxial growth system provided in an embodiment of the present application.

[0031] Figure 2 A schematic diagram of the side cross-sectional structure of the simple filter provided in an embodiment of the present application.

[0032] Figure 3 A schematic diagram of the structure of the second purge assembly provided in an embodiment of the present application.

[0033] Figure 4 A schematic diagram of the control relationship of the epitaxial growth system provided in an embodiment of the present application.

[0034] Figure numerals: 1. reaction chamber; 2. exhaust pipe; 3. air pressure detection assembly; 4. first switch valve; 5. first vacuum pipe; 6. simple filter; 61. mounting bracket; 62. filter plate; 7. second vacuum pipe; 8. second switch valve; 9. butterfly valve; 10. dry pump; 11. third vacuum pipe; 12. third switch valve; 13. dust filter; 14. first purge assembly; 15. controller; 16. fourth switch valve; 17. fifth switch valve; 18. expansion section; 19. second purge assembly; 20. rotating assembly; 21. exhaust gas treatment equipment; 22. intake pipe; 23. blowing hole. DETAILED DESCRIPTION

[0035] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all of the embodiments. The components of the embodiments of the present application described and shown in the drawings here can be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of the present application provided in the drawings is not intended to limit the scope of the application claimed for protection, but merely represents the selected embodiments of the present application. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without making creative work belong to the scope of protection of the present application.

[0036] It should be noted that similar reference numerals and letters represent similar items in the following drawings, so once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings. At the same time, in the description of this application, the terms "first", "second", etc. are only used to distinguish the description and cannot be understood as indicating or implying relative importance.

[0037] like Figure 1-Figure 4 As shown, the present application provides an epitaxial growth system, which includes:

[0038] A reaction chamber 1, which has an exhaust pipe 2 and an air pressure detection component 3, wherein the exhaust pipe 2 is provided with a first switch valve 4, and the air pressure detection component 3 is used to collect air pressure information of the reaction chamber;

[0039] A first vacuum pipe 5, whose input end is connected to the exhaust pipe 2, and a simple filter 6 is arranged inside the first vacuum pipe 5;

[0040] A second vacuum pipe 7, whose input end is connected to the output end of the first vacuum pipe 5, and on which a second switch valve 8, a butterfly valve 9 and a dry pump 10 are arranged in sequence along the gas flow direction;

[0041] The third vacuum pipe 11 has an input end connected to the output end of the first vacuum pipe 5, and is provided with a third switch valve 12 and a dust filter 13. The third switch valve 12 is located in front of the input end of the dust filter 13;

[0042] A first purge assembly 14 is installed on the first vacuum pipe 5 and is located in front of the input end of the simple filter 6;

[0043] The controller 15 is used to perform PID control on the butterfly valve 9 according to the reaction chamber air pressure information and the preset air pressure information during the epitaxial growth process, and is also used to control the reaction chamber 1 to stop the epitaxial growth process, control the first switch valve 4 and the second switch valve 8 to close and control the third switch valve 12 to open when the difference between the reaction chamber air pressure information and the preset air pressure information is greater than or equal to the preset error, and control the first purge component 14 to purge the simple filter 6 until the continuous purge time of the first purge component 14 reaches the first preset time, so as to blow the dust on the simple filter 6 into the dust filter 13, and then control the epitaxial growth system to recover.

[0044] The reaction chamber 1 of this embodiment can be an existing reaction chamber 1, and the reaction chamber 1 can grow an epitaxial film on a substrate by using a chemical vapor deposition process. Specifically, the reaction chamber 1 of this embodiment has an exhaust pipe 2 and an air pressure detection component 3. The exhaust gas generated in the reaction chamber 1 is discharged from the reaction chamber 1 through the exhaust pipe 2. The exhaust pipe 2 of this embodiment is provided with a first switch valve 4, and the first switch valve 4 is preferably a plug valve. In this embodiment, the reaction chamber 1 can be connected with the first vacuum pipe 5 by opening the first switch valve 4, and the reaction chamber 1 can also be isolated from the first vacuum pipe 5 by closing the first switch valve 4. The air pressure detection component 3 of this embodiment can be a component such as an air pressure detector or an air pressure sensor that can collect air pressure information of the reaction chamber, and the air pressure information of the reaction chamber is the air pressure in the reaction chamber 1. The first vacuum pipe 5 of this embodiment is preferably a round pipe, and the input end of the first vacuum pipe 5 is connected to the exhaust pipe 2. A simple filter 6 is provided in the first vacuum pipe 5, and the by-products formed in the epitaxial growth process can be attached to the simple filter 6, that is, this embodiment can use the simple filter 6 to filter most of the by-products in the exhaust gas. The second vacuum pipe 7 of this embodiment is preferably a round tube, the input end of the second vacuum pipe 7 is connected to the output end of the first vacuum pipe 5, and the second vacuum pipe 7 is provided with a second switch valve 8, a butterfly valve 9 and a dry pump 10 in sequence along the gas flow direction. The second switch valve 8 is preferably a plug valve. This embodiment can connect or disconnect the butterfly valve 9 from the first vacuum pipe 5 by controlling the second switch valve 8 to open or close. The butterfly valve 9 can be an existing device. This embodiment can adjust the air pressure in the reaction chamber 1 by using the butterfly valve 9 to adjust the flow rate of the tail gas in the second vacuum pipe 7 Specifically, the output end of the dry pump 10 of this embodiment is connected to the exhaust gas treatment device 21. This embodiment can drive the exhaust gas in the reaction chamber 1 to flow toward the exhaust gas treatment device 21 by using the dry pump 10 to evacuate. It should be understood that since the input end of the second vacuum pipe 7 of this embodiment is connected to the output end of the first vacuum pipe 5, that is, the simple filter 6 is located before the butterfly valve 9 and the dry pump 10, and the simple filter 6 can filter most of the by-products in the exhaust gas, this embodiment can effectively reduce the content of by-products in the exhaust gas that contacts the butterfly valve 9 and the dry pump 10. The third vacuum pipe 11 of this embodiment is preferably a round tube, the input end of the third vacuum pipe 11 is connected to the output end of the first vacuum pipe 5, and the third switch valve 12 and the dust filter 13 are provided on the third vacuum pipe 11. The third switch valve 12 is preferably a plug valve, and the third switch valve 12 is located before the input end of the dust filter 13. This embodiment can connect or disconnect the dust filter 13 with the first vacuum pipe 5 by controlling the third switch valve 12 to open or close.The first purge component 14 of this embodiment is installed on the first vacuum pipe 5 and is located in front of the input end of the simple filter 6. The first purge component 14 can use a purge gas (such as nitrogen or argon) to purge the simple filter 6. It should be understood that since the by-products formed by the epitaxial growth process are attached to the simple filter 6, the binding force between the by-products and the simple filter 6 is limited, and the force provided by the purge gas to the by-products is greater than the binding force between the by-products and the simple filter 6. Therefore, this embodiment can use the first purge component 14 to purge the simple filter 6 to blow off the by-products attached to the simple filter 6 to remove the by-products attached to the simple filter 6.

[0045] The controller 15 of this embodiment is electrically connected to the air pressure detection component 3, the first switch valve 4, the second switch valve 8, the third switch valve 12, the butterfly valve 9, the dry pump 10 and the first purge component 14 respectively. The controller 15 can perform PID control on the butterfly valve 9 according to the reaction chamber air pressure information and the preset air pressure information (preferably 100mbar) during the epitaxial growth process, so that the reaction chamber air pressure information is stabilized near the preset air pressure information. Since the by-products formed in the epitaxial production process will adhere to the simple filter 6, and as the by-products attached to the simple filter 6 increase, the flow smoothness of the exhaust gas at the simple filter 6 decreases. At this time, the butterfly valve 9 cannot be used to accurately control the reaction chamber air pressure information near the preset air pressure information. Therefore, when the difference between the reaction chamber air pressure information and the preset air pressure information is greater than or equal to the preset error information, the reaction chamber air pressure information is controlled to be close to the preset air pressure information. When the pressure information of the reaction chamber is poor (equivalent to the inability to use the butterfly valve 9 to accurately control the pressure information of the reaction chamber to be near the preset pressure information), the embodiment controls the reaction chamber 1 to stop the epitaxial growth process, controls the first switch valve 4 to close (equivalent to isolating the first vacuum pipe 5 from the reaction chamber 1 to prevent the byproducts attached to the simple filter 6 from being purged into the reaction chamber 1) and the second switch valve 8 to close (equivalent to isolating the first vacuum pipe 5 from the butterfly valve 9 to prevent the byproducts on the simple filter 6 from being purged to the butterfly valve 9), and controls the third switch valve 12 to open, and controls the first purge component 14 to purge the simple filter 6 until the continuous purge time of the first purge component 14 reaches the first preset time (preferably 5 minutes) to blow the dust on the simple filter 6 into the dust filter 13, and then controls the epitaxial growth system to recover. The specific process of controlling the recovery of the epitaxial growth system in this embodiment can be: controlling the first purge component 14 to stop purging; controlling the third switch valve 12 to close, and controlling the first switch valve 4 and the second switch valve 8 to open; and controlling the reaction chamber 1 to continue the epitaxial growth process.

[0046] The present application provides an epitaxial growth system that can utilize a simple filter 6 to filter most of the by-products in the exhaust gas, that is, the present application can effectively reduce the content of by-products in the exhaust gas that contacts the butterfly valve 9 and the dry pump 10 by setting up a simple filter 6. When the difference between the reaction chamber air pressure information and the preset air pressure information is greater than or equal to the preset error, the present application blows the by-products on the simple filter 6 into the dust filter 13 through the cooperation of the first switch valve 4, the second switch valve 8, the third switch valve 12 and the first purge assembly 14, that is, the present application is equivalent to maintaining the simple filter 6 by purging the simple filter 6, that is, the present application does not need to install and disassemble the simple filter 6, and the time required for maintaining the simple filter 6 is less than the time required for maintaining the dust filter 13. Therefore, the present application can effectively solve the problem of low growth efficiency of the reaction chamber 1 due to the long time required to maintain the filtering device for filtering the by-products in the exhaust gas. It should be understood that after the simple filter 6 is purged, the third switch valve 12 is closed and the reaction chamber 1 continues the epitaxial growth process, that is, the present application is equivalent to using the dust filter 13 to intermittently collect the by-products attached to the simple filter 6. Therefore, this embodiment can maintain the dust filter 13 during the epitaxial growth process in the reaction chamber 1, that is, the present application can maintain the dust filter 13 without affecting the epitaxial growth process.

[0047] In some preferred embodiments, the output end of the third vacuum pipe 11 is connected to the input end of the dry pump 10, and the epitaxial growth system further includes a fourth switch valve 16, which is installed on the third vacuum pipe 11 and located behind the output end of the dust filter 13. When the difference between the reaction chamber air pressure information and the preset air pressure information is greater than or equal to the preset error, the controller 15 controls the reaction chamber 1 to stop the epitaxial growth process, controls the first switch valve 4 and the second switch valve 8 to close, controls the third switch valve 12 to open, and controls the first purge assembly 14 to purge the simple filter 6. The process includes:

[0048] When the difference between the reaction chamber pressure information and the preset pressure information is greater than or equal to the preset error, the reaction chamber 1 is controlled to stop the epitaxial growth process, the first switch valve 4 and the second switch valve 8 are controlled to close, and the third switch valve 12 and the fourth switch valve 16 are controlled to open;

[0049] The first purge assembly 14 is controlled to purge the simple filter 6 , and the dry pump 10 is controlled to evacuate the dust filter 13 .

[0050] Because when the difference between the reaction chamber air pressure information and the preset air pressure information is greater than or equal to the preset error, this embodiment first controls the first switch valve 4 and the second switch valve 8 to close and controls the third switch valve 12 and the fourth switch valve 16 to open, and then controls the first purge component 14 to purge the simple filter 6, and controls the dry pump 10 to evacuate the dust filter 13. This embodiment can increase the flow rate of the purge gas and enable all blown-off by-products to be collected by the dust filter 13 by utilizing the dry pump 10 to evacuate the dust filter 13. Therefore, this embodiment can effectively enhance the cleaning effect of the by-products attached to the simple filter 6 and effectively avoid the situation in which the by-products remaining in the first vacuum pipe 5 due to part of the blown-off by-products remaining in the first vacuum pipe 5 are blown to the butterfly valve 9 when the epitaxial growth process is continued, thereby increasing the deposition amount of the by-products on the butterfly valve 9.

[0051] In some preferred embodiments, the epitaxial growth system further includes a fifth switch valve 17, which is mounted on the second vacuum pipe 7 and located between the confluence of the second vacuum pipe 7 and the third vacuum pipe 11 and the input end of the dry pump 10. Since the fifth switch valve 17 of this embodiment is mounted on the second vacuum pipe 7 and located between the confluence of the second vacuum pipe 7 and the third vacuum pipe 11 and the input end of the dry pump 10, this embodiment can connect or disconnect the dry pump 10 with the butterfly valve 9 and the third vacuum pipe 11 by controlling the fifth switch valve 17 to open or close, thereby effectively improving the convenience of maintaining the dry pump 10.

[0052] In some preferred embodiments, the diameter of the first vacuum pipe 5 is greater than the diameter of the exhaust pipe 2. Preferably, the first vacuum pipe 5 and the exhaust pipe 2 of this embodiment are both round pipes, the diameter of the exhaust pipe 2 of this embodiment is 60 mm, and the diameter of the first vacuum pipe 5 of this embodiment is 100 mm. Since the diameter of the first vacuum pipe 5 of this embodiment is greater than the diameter of the exhaust pipe 2, this embodiment can effectively reduce the flow resistance of the exhaust gas in the first vacuum pipe 5, thereby effectively avoiding the situation where the flow velocity of the exhaust gas is too low due to the interference of the simple filter 6 set in the first vacuum pipe 5 with the flow of the exhaust gas.

[0053] In some preferred embodiments, one end of the first vacuum pipe 5 close to the exhaust pipe 2 has an expansion section 18 expanding toward the first vacuum pipe 5. This embodiment is equivalent to setting a transition area between the first vacuum pipe 5 and the exhaust pipe 2, so this embodiment can effectively avoid the situation where the airflow is turbulent due to the sudden change in the pipe diameter at the connection between the exhaust pipe 2 and the first vacuum pipe 5, and the expansion section 18 of this embodiment can play a role in uniform flow, so this embodiment can make the exhaust gas evenly distributed in the first vacuum pipe 5, thereby effectively improving the filtering effect of the simple filter 6.

[0054] In some preferred embodiments, the epitaxial growth system also includes a second purge assembly 19, which is installed on the second vacuum pipe 7 and located at the input end of the butterfly valve 9. The controller 15 is also used to control the second purge assembly 19 to purge the butterfly valve 9 when the difference between the reaction chamber air pressure information and the preset air pressure information is greater than or equal to a preset error or the epitaxial growth process is completed, until the continuous purge time of the second purge assembly 19 reaches a second preset time. Specifically, the second purge assembly 19 of this embodiment includes a purge ring having a plurality of air inlet pipes 22 and a plurality of air holes 23 arranged toward the butterfly valve 9. This embodiment can use the second purge assembly 19 to purge the butterfly valve 9 to blow off the by-products deposited on the butterfly valve 9. It should be understood that since the simple filter 6 can filter most of the by-products in the exhaust gas, that is, only a small amount of by-products will be deposited on the butterfly valve 9, this embodiment is equivalent to using the second purge assembly 19 to remove a small amount of deposits on the butterfly valve 9. The deposits on the butterfly valve 9 will be discharged into the dry pump 10 after being blown away, and discharged from the dry pump 10 under the nitrogen purge function of the dry pump 10. Since when the difference between the reaction chamber air pressure information and the preset air pressure information is greater than or equal to the preset error or the epitaxial growth process is completed, this embodiment promptly removes the by-products deposited on the butterfly valve 9 by using the second purge assembly 19 to purge the butterfly valve 9. Therefore, this embodiment can further avoid the situation where the air pressure regulation accuracy of the reaction chamber 1 is reduced due to the increase in the deposition of by-products on the butterfly valve 9, the air pressure of the reaction chamber 1 is uncontrollable, and the butterfly valve 9 is damaged due to excessive by-products deposited on the butterfly valve 9.

[0055] In some preferred embodiments, the simple filter 6 includes a mounting bracket 61 and a plurality of filter discs 62, and the plurality of filter discs 62 are arranged at intervals on the mounting bracket 61. When the reaction chamber 1 performs the epitaxial growth process, the filter discs 62 are perpendicular to the flow direction of the exhaust gas of the reaction chamber 1, and each filter disc 62 is provided with a plurality of through holes. Since the simple filter 6 of this embodiment includes a mounting bracket 61 and a plurality of filter discs 62, and the plurality of filter discs 62 are arranged at intervals on the mounting bracket 61, this embodiment can effectively increase the filtering area of ​​the simple filter 6, thereby effectively improving the filtering effect of the simple filter 6. Preferably, the sum of the areas of all through holes on the same filter disc 62 is greater than or equal to half of the area of ​​the filter disc 62, and the diameter of the through hole of this embodiment is 3-5 mm. This embodiment can effectively avoid the situation that the through hole is blocked by byproducts due to the through hole being too small in diameter and the through hole can easily pass through the through hole due to the through hole being too large in diameter, thereby reducing the filtering effect of the simple filter 6.

[0056] In some preferred embodiments, the density of the through holes near the center of the filter plate 62 is greater than that away from the center of the filter plate 62. Since the density of the through holes near the center of the filter plate 62 in this embodiment is greater than that away from the center of the filter plate 62, the higher density of through holes in the central area can effectively handle a larger air flow, and the lower density of through holes in the edge area can reduce unnecessary resistance, so this embodiment can effectively improve the filtering efficiency of the simple filter 6.

[0057] In some preferred embodiments, the epitaxial growth system further comprises a rotating assembly 20, which is mounted on the first vacuum pipe 5 and connected to the mounting bracket 61. The controller 15 is also used to control the rotating assembly 20 to drive the mounting bracket 61 to rotate when the first purge assembly 14 is controlled to purge the simple filter 6. The rotating assembly 20 of this embodiment is preferably a motor, and when the first purge assembly 14 is controlled to purge the simple filter 6, the rotating assembly 20 is controlled to drive the mounting bracket 61 to rotate at a high speed. Since when the first purge assembly 14 is controlled to purge the simple filter 6, this embodiment controls the rotating assembly 20 to drive the mounting bracket 61 to rotate at a high speed, that is, this embodiment is equivalent to making all surfaces of the simple filter 6 able to be purged, so this embodiment can effectively solve the problem of the existence of a purging dead angle due to the static purging of the simple filter 6, and the centrifugal force generated during high-speed rotation can be used to further improve the cleaning effect of the simple filter 6, thereby effectively improving the purging effect of the simple filter 6.

[0058] In some preferred embodiments, the through holes of adjacent filter sheets 62 are staggered. Since the through holes of adjacent filter sheets 62 of this embodiment are staggered, this embodiment can effectively extend the path of the exhaust gas in the simple filter 6 and effectively avoid the situation where the byproducts in the exhaust gas directly pass through the multi-layer filter sheets 62, thereby effectively improving the filtering effect of the simple filter 6.

[0059] In some preferred embodiments, the surface of the filter plate 62 is roughened. In this embodiment, the surface of the filter plate 62 can be roughened by sandblasting or aluminum spraying. Since this embodiment can increase the surface area of ​​the filter plate 62 by roughening the surface of the filter plate 62 to increase the adhesion between the byproduct and the filter plate 62, this embodiment can make the byproduct adhere to the filter plate 62 more smoothly, thereby further improving the filtering effect of the simple filter 6.

[0060] As can be seen from the above, the epitaxial growth system provided by the present application can utilize the simple filter 6 to filter most of the by-products in the exhaust gas, that is, the present application can effectively reduce the content of by-products in the exhaust gas in contact with the butterfly valve 9 and the dry pump 10 by setting up the simple filter 6. When the difference between the reaction chamber air pressure information and the preset air pressure information is greater than or equal to the preset error, the present application blows the by-products on the simple filter 6 into the dust filter 13 through the cooperation of the first switch valve 4, the second switch valve 8, the third switch valve 12 and the first purge assembly 14, that is, the present application is equivalent to maintaining the simple filter 6 by purging the simple filter 6, that is, the present application does not need to install and disassemble the simple filter 6, and the time required for maintaining the simple filter 6 is less than the time required for maintaining the dust filter 13. Therefore, the present application can effectively solve the problem of low growth efficiency of the reaction chamber 1 due to the long time required to maintain the filtering device for filtering the by-products in the exhaust gas.

[0061] In the embodiments provided in the present application, it should be understood that, herein, relational terms such as first and second, etc. are merely used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations.

[0062] The above description is only an embodiment of the present application and is not intended to limit the protection scope of the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. An epitaxial growth system, characterized in that: The epitaxial growth system comprises: A reaction chamber, comprising an exhaust pipe and an air pressure detection component, wherein the exhaust pipe is provided with a first switch valve, and the air pressure detection component is used to collect air pressure information of the reaction chamber; a first vacuum pipe, whose input end is connected to the exhaust pipe, and in which a simple filter is arranged, wherein the simple filter comprises a mounting bracket and a plurality of filter plates, wherein the plurality of filter plates are arranged on the mounting bracket at intervals, and when the epitaxial growth process is performed in the reaction chamber, the filter plates are perpendicular to the flow direction of the exhaust gas in the reaction chamber, and each of the filter plates is provided with a plurality of through holes; A second vacuum pipeline, the input end of which is connected to the output end of the first vacuum pipeline, and a second switch valve, a butterfly valve and a dry pump are arranged in sequence along the gas flow direction; a third vacuum pipeline, whose input end is connected to the output end of the first vacuum pipeline, on which a third switch valve and a dust filter are arranged, whose output end is connected to the input end of the dry pump, and the third switch valve is located in front of the input end of the dust filter; A first purge assembly is installed on the first vacuum pipe and is located in front of the input end of the simple filter; A rotating assembly, mounted on the first vacuum pipe and connected to the mounting bracket; A controller is used to perform PID control on the butterfly valve according to the reaction chamber air pressure information and the preset air pressure information during the epitaxial growth process, and is also used to control the reaction chamber to stop the epitaxial growth process, control the first switch valve and the second switch valve to close and control the third switch valve to open when the difference between the reaction chamber air pressure information and the preset air pressure information is greater than or equal to a preset error, and control the first purge component to purge the simple filter until the continuous purge time of the first purge component reaches a first preset time to blow the dust on the simple filter into the dust filter, and then control the epitaxial growth system to recover, and is also used to control the rotating component to drive the mounting bracket to rotate when controlling the first purge component to purge the simple filter.

2. The epitaxial growth system according to claim 1, characterized in that: The epitaxial growth system further includes a fourth switch valve, which is installed on the third vacuum pipe and located behind the output end of the dust filter. When the difference between the pressure information of the reaction chamber and the preset pressure information is greater than or equal to a preset error, the controller controls the reaction chamber to stop the epitaxial growth process, controls the first switch valve and the second switch valve to close, controls the third switch valve to open, and controls the first purge component to purge the simple filter. The process includes: When the difference between the reaction chamber pressure information and the preset pressure information is greater than or equal to a preset error, controlling the reaction chamber to stop the epitaxial growth process, controlling the first switch valve and the second switch valve to close, and controlling the third switch valve and the fourth switch valve to open; The first purge component is controlled to purge the simple filter, and the dry pump is controlled to evacuate the dust filter.

3. The epitaxial growth system according to claim 2, characterized in that: The epitaxial growth system further includes a fifth switch valve, which is installed on the second vacuum pipeline and located between a confluence of the second vacuum pipeline and the third vacuum pipeline and an input end of the dry pump.

4. The epitaxial growth system according to claim 1, characterized in that: The diameter of the first vacuum pipe is greater than the diameter of the exhaust pipe.

5. The epitaxial growth system according to claim 4, characterized in that: An end of the first vacuum pipe close to the exhaust pipe has an expansion section expanding toward the first vacuum pipe.

6. The epitaxial growth system according to claim 1, characterized in that: The epitaxial growth system also includes a second purge assembly, which is installed on the second vacuum pipe and located at the input end of the butterfly valve. The controller is also used to control the second purge assembly to purge the butterfly valve when the difference between the reaction chamber air pressure information and the preset air pressure information is greater than or equal to a preset error or the epitaxial growth process is completed, until the continuous purge time of the second purge assembly reaches a second preset time.

7. The epitaxial growth system according to claim 1, characterized in that: The density of the through holes near the center of the filter plate is greater than the density of the through holes far from the center of the filter plate.

8. The epitaxial growth system according to claim 1, characterized in that: The through holes of adjacent filter plates are misaligned.

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