Plasma generating system and apparatus and method for processing semiconductor workpiece

Abstract

The present disclosure relates to a plasma generation system and a method for processing a semiconductor workpiece. The plasma generation system includes a main body and a main chamber; a plasma generation part and a plasma generation chamber; a gas supply system for delivering a process gas into the plasma generation chamber; a gas distribution assembly for distributing the process gas into the plasma generation chamber; a plasma source configured to generate plasma from the process gas; a guide device configured to guide the flow direction of the plasma; and a connecting component configured to connect the plasma generation part and the guide device; wherein the guide device includes a substrate and a guide part. The plasma generation system disclosed in the present disclosure can adjust the plasma distribution density in the processing chamber by moving the guide device without adjusting the original process conditions and parameters, thereby optimizing the uniformity of dust removal.

Description

Technical Field

[0001] The present disclosure belongs to the technical field of semiconductor manufacturing, and particularly relates to a plasma generation system, equipment including the plasma generation system, and a method for processing a semiconductor workpiece. Background Art

[0002] In the semiconductor manufacturing process, the ash process is a key step to remove residues such as photoresist after the etching process and during the lithography process.

[0003] Using plasma to remove residues from etching or photolithography is a common method of ashing process, which has the advantages of high deashing efficiency and good reliability. Usually, by controlling the time and conditions of the ashing process, the thickness of the removed film layer can be accurately controlled to improve the performance of the chip. Summary of the invention

[0004] The present disclosure provides a plasma generating system and a method for processing a semiconductor workpiece. By using a plasma generating system with a guide device, the distribution density of plasma is adjusted, thereby accurately controlling the film thickness variation of an ashing process.

[0005] According to one aspect of the present disclosure, there is provided a plasma generating system, comprising:

[0006] a body portion and a body chamber surrounded by the body portion;

[0007] A plasma generating portion and a plasma generating chamber disposed in the main chamber;

[0008] a gas supply system configured to deliver one or more process gases into the plasma generating chamber;

[0009] a gas distribution assembly configured to distribute one or more process gases into the plasma generation chamber via the gas distribution assembly;

[0010] a plasma source configured to generate a plasma from the one or more process gases within the plasma generation chamber;

[0011] a guide device, disposed in the main chamber and configured to guide the flow direction of the plasma; and

[0012] a connecting member configured to telescopically connect the plasma generating portion and the guide device;

[0013] The guide device comprises a base body and a guide portion extending downward from the base body into the plasma generating chamber.

[0014] According to another aspect of the present disclosure, a plasma processing device for a semiconductor workpiece is provided, comprising the above-mentioned plasma generating system and a plasma processing system.

[0015] According to another aspect of the present disclosure, there is provided a method for processing a semiconductor workpiece, comprising the steps of:

[0016] placing the semiconductor workpiece in a processing chamber, the semiconductor workpiece comprising an organic layer;

[0017] generating a plasma from one or more process gases in a plasma generation chamber;

[0018] Adjusting the position of the guide device in the plasma generating chamber to adjust the plasma distribution density in the processing chamber;

[0019] separating the plasma generating chamber from the processing chamber by a grid and filtering ions in the plasma; and

[0020] The semiconductor workpiece is exposed to the plasma in the processing chamber.

[0021] The plasma processing equipment and the semiconductor workpiece processing method disclosed in the present invention can improve the uniformity of the ashing process without adjusting other process parameters. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] The features and advantages of various embodiments of the present disclosure will be better understood with reference to the following drawings, in which:

[0023] Figure 1 is a cross-sectional view of a plasma processing device according to an embodiment of the present disclosure;

[0024] Figure 2 is a cross-sectional view of a plasma processing device according to another embodiment of the present disclosure;

[0025] Figure 3 is a schematic diagram of motor distribution in a plasma processing device according to the present disclosure;

[0026] Figure 4 is a schematic diagram of an annular gas distribution assembly in a plasma processing apparatus according to the present disclosure;

[0027] Figure 5 is a schematic diagram of the heights of various components in a plasma processing device according to an embodiment of the present disclosure;

[0028] Figure 6is a process flow chart of a plasma treatment method according to the present disclosure;

[0029] Figure 7 is a graph of the deashing rate of the ashing process according to Example 1 of the present disclosure;

[0030] Figure 8 is a graph of the deashing rate of the ashing process according to Example 2 of the present disclosure;

[0031] Fig. 9 It is a graph of the deashing rate of the ashing process according to Example 3 of the present disclosure. DETAILED DESCRIPTION

[0032] The exemplary embodiments of the present disclosure are described below in conjunction with the accompanying drawings, wherein various details including the embodiments of the present disclosure are exemplary and are only used to help understanding, rather than limiting the present disclosure. Therefore, it should be appreciated by those of ordinary skill in the art that various modifications and variations may be made to the embodiments described herein without departing from the scope and spirit of the present disclosure. Therefore, various aspects of the present disclosure are intended to cover such modifications and variations. Similarly, for clarity and conciseness, descriptions of well-known functions and structures will be omitted in the following description.

[0033] In the deashing process during the manufacturing of semiconductor devices, plasma is usually generated in a plasma generation chamber, and the free radicals in the plasma enter the processing chamber to react with the residual organic layer (such as a photoresist layer) on the surface of the semiconductor workpiece to achieve the purpose of deashing. In the deashing process, the diffusion mode and distribution density of the plasma (especially the free radicals therein) play a very important role.

[0034] Plasma processing equipment for semiconductor workpieces

[0035] According to one aspect, the present disclosure provides a plasma processing apparatus for a semiconductor workpiece, including a plasma processing system, a plasma generating system, and a barrier separating the plasma processing system from the plasma generating system.

[0036] In the prior art, the plasma generated in the plasma generation chamber diffuses through the barrier into the processing chamber, and the semiconductor workpiece (such as a wafer) placed in the processing chamber is etched when exposed to the plasma. At this time, the etching rate at the edge is usually lower than that in the center area, which is the so-called "edge effect". The larger the size of the semiconductor workpiece, the more significant this "edge effect" is.

[0037] The semiconductor workpiece used in the present disclosure may be any suitable semiconductor workpiece, for example, a wafer having a photoresist layer. The thickness of the removed photoresist layer is usually controlled by controlling the process parameters such as the process gas flow rate, temperature, pressure, process gas composition and time of the ashing process, so as to achieve the purpose of adjusting the film thickness of the semiconductor workpiece. However, if any of the process parameters of the ashing process change, other parameters will also change accordingly, which will in turn affect other properties of the semiconductor workpiece. The process stability is difficult and the adjustment cycle is long, which is not conducive to the stability of the processing performance of the semiconductor workpiece.

[0038] The present disclosure provides a plasma processing device for a semiconductor workpiece, comprising a plasma generating system, a plasma processing system, and a grid separating the plasma generating system from the plasma processing system.

[0039] Plasma generation system

[0040] According to one embodiment, the above-mentioned plasma generation system includes a main body part, a plasma generation part, a gas supply system, a gas distribution assembly, a plasma source and a guide device.

[0041] Specifically, see Figures 1 to 5 The main body 2 includes side walls and a top plate. The side walls of the main body 2 can be made of metal materials, such as stainless steel or aluminum, and the top plate can be made of quartz or ceramic. The main body 2 surrounds the main chamber.

[0042] The plasma generation system further comprises a plasma generation part 3 disposed in the main body chamber. Specifically, the plasma generation part 3 is located in the lower half of the main body chamber and surrounds the plasma generation chamber. Further, the plasma generation part 3 and the barrier 9 together define the plasma generation chamber. The plasma generation chamber may have a shape corresponding to the main body chamber, and preferably has the same geometric center. For example, when the main body chamber has a cylindrical shape, the plasma generation chamber also has a cylindrical shape, and the two have the same central axis.

[0043] The plasma generation system further includes a gas supply system. The gas supply system may include one or more gas sources 14, a gas supply line 15, and a gas distribution assembly 5. Each gas source 14 may control the amount of gas and the gas flow rate delivered to the gas distribution assembly 5 through a flow controller 13. The gas supply system may be used to deliver any suitable process gas, which may be a hydrogen-containing gas, preferably hydrogen, in the present disclosure. In some embodiments, the process gas may be mixed with an inert gas, which may be referred to as a "carrier gas" gas, such as N2, He, Ar, Ne, or Xe.

[0044] According to some embodiments, the gas distribution assembly 5 may be an annular structure 11 having a plurality of through holes 12, and is arranged around the inner wall of the main body portion. The bottom surface of the gas distribution assembly 5 is connected to the top surface of the plasma generating portion 3, so that the lower end outlets of the through holes 12 are all located within the range of the plasma generating chamber, thereby the process gas passing through the gas distribution assembly 5 enters the plasma generating chamber.

[0045] The plasma generating system may further include a supporting member 10 and a central shaft 19 connected to the center of the supporting member 10 , so that the supporting member 10 can deflect around the central shaft 19 , and the top of the central shaft 19 is fixedly connected to the top plate of the main body 2 .

[0046] The plasma generation system may further include a guide device 4. The guide device 4 may include a substrate 41 and a guide portion 42 extending downward from the substrate 41 into the plasma generation chamber, wherein the guide portion 42 may be a tubular structure, in particular a tubular structure with a sealed lower end. The guide portion 42 may be made of a quartz material. According to some embodiments, the lower surface of the support member 10 has a groove for the substrate 41 of the guide device 4 to be embedded, thereby achieving a sealed connection between the guide device 4 and the support member 10.

[0047] According to some embodiments, the plasma generation system may further include a connecting member 6 for retractably connecting the plasma generation part 3 and the guide device 4. Specifically, the connecting member 6 may include a first end face, a second end face, and a retractable portion connecting the first end face and the second end face. The first end face is attached to the bottom face of the support member 10, and the second end face is attached to the top face of the gas distribution assembly 5. In addition, the lower end of the plasma generation part 3 abuts against the grille 9. Thus, the plasma generation chamber is defined by the support member 10, the connecting member 6, the gas distribution assembly 5, the plasma generation part 3 and the grille 9. In addition, preferably, the main body 2, the plasma generation part 3, the connecting member 6 and the guide device 4 are coaxially arranged. According to a specific embodiment, the connecting member 6 may be a bellows.

[0048] The plasma generation system may further include one or more driving devices 7, which are respectively against the top surface of the support member 10 and are configured to drive the guide device 4 to move. The one or more driving devices 7 may be one or more motors, for example, three motors, and each driving device 7 may independently step. According to one embodiment, each driving device 7 may be connected to the central shaft 19 via a connecting rod or a lead screw (not shown). According to a preferred embodiment, the one or more driving devices may be three motors equidistantly arranged in the circumferential direction relative to the inner wall of the main chamber. One or more stepping movements in the driving device 7 will cause the guide device 4 to move up and down and / or deflect.

[0049] The above-mentioned plasma generation system may also include a plasma source for generating plasma from a process gas in a plasma generation chamber. In the present disclosure, the plasma source may be, for example, an inductively coupled radio frequency plasma source. According to some embodiments, the plasma source may include an induction coil 16, a matcher 17, and a radio frequency (RF) power supply 18 arranged around the main body and outside the area corresponding to the plasma generation part. The induction coil 16 is coupled to the radio frequency power supply 18 through a suitable radio frequency matcher 17. The induction coil 16 may be formed of any suitable material, including a conductive material suitable for inducing plasma in the plasma generation chamber. The radio frequency power supply used in the present disclosure may be 2500~5000W at 13.56MHz. When RF power from the radio frequency power supply 18 is applied to the induction coil 16, plasma may be generated from the process gas in the plasma generation chamber. The generated plasma generally includes a mixture of substances such as free radicals, ions, and unexcited gas molecules.

[0050] According to some embodiments, the inner diameter of the guide portion 42 is 40-120 mm smaller than the inner diameter of the plasma generation chamber, preferably 50-100 mm, for example 60 mm, 70 mm, 80 mm or 90 mm smaller. According to other embodiments, the inner diameter of the guide portion 42 is 0.3-0.8 times, for example 0.4 times, 0.5 times, 0.6 times or 0.7 times the diameter of the plasma generation chamber.

[0051] See also Figure 5 The difference between the height h of the guide portion 42 and the height H of the plasma generation chamber may be 110-220 mm, preferably 130-200 mm, such as 140 mm, 150 mm, 160 mm, 170 mm, 180 mm or 190 mm. Further, the height h1 of the portion of the guide portion 42 in the plasma generation chamber is 0.3-0.9 times, such as 0.4 times, 0.5 times, 0.6 times, 0.7 times or 0.8 times, of the height H of the plasma generation chamber.

[0052] According to a specific embodiment, see Figure 3 , the one or more driving devices 7 can independently perform stepping motion. When one driving device 7 performs stepping motion alone, the supporting component 10 drives the connecting component 6 and the guiding device 4 to deflect accordingly; when two or more driving devices 7 perform stepping motion simultaneously, the deflection direction and deflection angle of the guiding device 4 are determined by the combined action directions of the driving devices 7.

[0053] In order to describe the deflection direction and deflection angle of the guide device 4, the following coordinate system is used for explanation. A three-dimensional rectangular coordinate system is established as follows: the intersection of the bottom surface of the base 41 of the guide device 4 and its central longitudinal axis is taken as the origin, the XY plane is parallel to the cross section of the base 41, and the Z axis is perpendicular to the XY plane and downward. According to a specific embodiment, the drive device 7 may include three motors M1, M2 and M3, which are evenly spaced on the XY plane. Among them, M1 is defined in the positive direction of the X-axis, M2 is at a position 120° counterclockwise from the positive direction of the X-axis, M3 is at a position 240° counterclockwise from the positive direction of the X-axis, and the positive direction of the Z axis is perpendicular to the XY plane and downward.

[0054] The deflection direction and deflection angle (θ, ). The deflection direction is represented by the anticlockwise deflection angle θ of the projection of the guide part on the XY plane relative to the positive direction of the X axis; the deflection angle is represented by the deflection angle of the guide part relative to the positive direction of the Z axis. In the plasma generation system disclosed in the present invention, the deflection direction θ of the guide portion can be 0 to 360°, and the deflection angle It can be 0-15°, for example 3°, 5°, 7°, 10° or 13°.

[0055] When the horizontal forces of the plurality of driving devices 7 are balanced, the guide device 4 will move in the vertical direction. Specifically, relative to the longitudinal axis of the guide device 4, the vertical movement distance h2 of the guide portion 42 may be 0 to 100 mm, for example, 5 mm, 10 mm, 15 mm, 20 mm, 25 mm, 30 mm, 40 mm, 50 mm, 60 mm, 70 mm, 80 mm or 90 mm.

[0056] The direction and amplitude of movement and / or deflection of the guide device 4 can be preset, for example, based on the "edge effect" mentioned above, it can be preset to deflect toward the edge portion; it can also be determined according to the thickness change of the surface coating of the processed semiconductor workpiece (for example, a wafer with a photoresist layer) during the deashing process. For example, if the surface coating thickness of a certain area on the wafer is too large after the deashing process, it means that the deashing speed of this area is too low, and the plasma flow can be guided to this area, so that the guide device 4 can be deflected toward this area.

[0057] The plasma generating system disclosed in the present invention includes a nested plasma generating chamber and a guiding device that meet the above requirements, which can effectively direct the plasma generated in the plasma generating chamber to flow toward the grid along a predetermined direction, and flow into the processing chamber after the ions therein are filtered out by the grid, thereby adjusting the distribution density of free radicals in the processing chamber.

[0058] Grille

[0059] The barrier 9 is located between the plasma generation system and the plasma treatment system, and is used to separate the plasma generation chamber from the treatment chamber. According to some embodiments, the barrier 9 may have a plurality of through holes. Neutral substances (i.e., free radicals) in the plasma mixture generated in the plasma generation chamber may flow through the through holes into the downstream treatment chamber without substantially changing the flow direction; charged particles (e.g., ions) recombine on the through hole walls, and thus can be removed. The barrier may be made of metal (e.g., aluminum) or other conductive materials.

[0060] Plasma treatment system

[0061] The plasma processing system includes a processing chamber and a workpiece support (not shown) located in the processing chamber. The workpiece support can effectively support the semiconductor workpiece 8 and can rotate the semiconductor workpiece 8 during or before or after the process. The workpiece support can be made of quartz material, or include quartz material, especially quartz material without hydroxyl group.

[0062] In the prior art, during the process of plasma being formed in a plasma generation chamber and diffused to a processing chamber through a barrier, the distribution density of free radicals in the plasma varies in the processing chamber. Usually, the plasma density gradually decreases from the center to the edge of the processed semiconductor workpiece, which causes the etching rate of the surface of the semiconductor workpiece to be higher in the center and lower at the edge, thereby causing the thickness of the organic layer (such as a photoresist layer) etched away at the center of the semiconductor workpiece to be larger, and the thickness of the organic layer etched away at the edge to be smaller.

[0063] Method for processing a semiconductor workpiece

[0064] According to another aspect, see Figure 6 , the present disclosure provides a method for processing a semiconductor workpiece, comprising the following steps.

[0065] S101. Placing a semiconductor workpiece in a processing chamber, wherein the semiconductor workpiece may include an organic layer, for example, the semiconductor workpiece may be a wafer having a photoresist layer.

[0066] S102. Plasma is generated in a plasma generation chamber by one or more process gases. Here, the process gas may be H2, or a mixture of H2 and a carrier gas. The carrier gas may be an inert gas, such as N2, Ar, He, Xe, or a combination thereof. The plasma source for inducing the process gas to generate plasma may be an inductively coupled radio frequency plasma source, and the frequency of the radio frequency plasma source may be 13.56 megahertz (MHz), and the power may be 2500 to 5000 watts (W).

[0067] S103. Adjust the position of the guide device in the plasma generation chamber to adjust the plasma distribution density in the processing chamber. Wherein, adjusting the position of the guide device in the plasma generation chamber may include adjusting the height of the guide portion of the guide device in the plasma generation chamber, and / or adjusting the deflection direction and / or deflection angle of the guide portion of the guide device in the plasma generation chamber. According to a specific embodiment, adjusting the height and deflection movement of the guide device may be achieved by stepping motion of one or more motors.

[0068] According to a specific embodiment, a height h1 of the portion of the guide portion in the plasma generating chamber is 0.3 to 0.9 times, for example, 0.4, 0.5, 0.6, 0.7 or 0.8 times, of a height H of the plasma generating chamber.

[0069] S104. Separate the plasma generation chamber from the processing chamber by a barrier, and filter the ions in the plasma. The plasma induced by the process gas in the plasma generation chamber generally includes free radicals, ions, and molecules. The useful substance for the ashing process is a free radical, so the plasma generated in the above steps flows into the processing chamber through the barrier with through holes, and the ions therein are filtered out.

[0070] S105. In a processing chamber, exposing a semiconductor workpiece to plasma.

[0071] The process gas may be a hydrogen-containing gas, preferably hydrogen. In some embodiments, the process gas may be mixed with an inert gas, which may be referred to as a "carrier gas", such as N2, He, Ar, Ne or Xe.

[0072] In the above method, example process parameters for processing a semiconductor workpiece may include:

[0073] Pressure: 900~1500 mTorr

[0074] Inductively coupled RF plasma source (13.56 MHz) power: 2500~5000 watts (W)

[0075] N2 flow rate: 5000~10000 standard cubic centimeters per minute (SCCM)

[0076] H2 flow rate: 5000~10000 standard cubic centimeters per minute (SCCM)

[0077] Temperature: 100~300℃.

[0078] By using the above method disclosed in the present invention, the non-uniformity (non-Uniformity%) of a semiconductor workpiece (eg wafer) in a dust removal process may be less than 30%, for example, less than 25%, less than 20%, less than 15%, less than 10%, less than 5%, or less than 2.5%.

[0079] The definition of inhomogeneity is as follows: Inhomogeneity = (h max -h min ) / (2×h ave )×100%, where h max is the maximum measured thickness of the measured layer; h min h is the minimum measured thickness of the measured layer; ave The average measured thickness of the measured layer. Depending on the size of the semiconductor workpiece, 16 points or 49 points distributed in a circle along the radial direction can be used.

[0080] Example

[0081] Example 1

[0082] In the plasma processing equipment according to the present disclosure, an ashing process is performed on a wafer (12 inches) with a photoresist layer. The plasma generation system includes three motors M1, M2 and M3 arranged equidistantly in the circumference, as well as a nested plasma generation part and a guide device. The inner diameter of the guide part is 0.3 times the diameter of the plasma generation chamber, and the height h1 of the part of the guide part in the plasma generation chamber is 0.6 times the height H of the plasma generation chamber.

[0083] The height of motors M1 and M2 is kept at 0 mm, and M3 is stepped down by 5 mm. Correspondingly, the deflection angle of the quartz tubular guide is θ=60°, =3°.

[0084] The process parameters of the deashing process are as follows:

[0085] Pressure: 900~1500 mTorr

[0086] Inductively coupled RF plasma source (13.56 MHz) power: 2500~5000 watts (W)

[0087] Process gas: H2 and N2

[0088] N2 flow rate: 5000~10000 standard cubic centimeters per minute (SCCM)

[0089] H2 flow rate: 5000~10000 standard cubic centimeters per minute (SCCM)

[0090] Temperature: 100~300℃.

[0091] The thickness of the photoresist layer is measured before the deashing process, and then the thickness of the photoresist layer is measured again after the deashing process to obtain the corresponding deashing rate diagram. The test results are shown in Figure 7 The deashing non-uniformity of this embodiment was measured to be 17%.

[0092] Example 2

[0093] The deashing process was carried out under the same conditions as in Example 1, except that the heights of the motors M1 and M2 were kept at 0 mm, and M3 was stepped down by 10 mm. Correspondingly, the deflection angle of the quartz tubular guide portion was θ=60°, =5°.

[0094] The deashing rate diagram of the test wafer is shown in Figure 8 The deashing non-uniformity of this embodiment was measured to be 27%.

[0095] Example 3

[0096] The deashing process is carried out under the same conditions as in Example 1, except that the height of the motors M1, M2 and M3 is kept at 0 mm. Correspondingly, the quartz tubular guide portion does not deflect, that is, the deflection angle is θ=0°. =0°.

[0097] The deashing rate diagram of the test wafer is shown in Fig. 9 The deashing non-uniformity of this embodiment was measured to be 24%.

[0098] Depend on Figures 7 to 9 The figure shows the dust removal rate of the wafer at different positions of the nested quartz tube according to the methods of the above-mentioned embodiments 1 to 3, from which it can be seen that their operation method is to control the height of two motors to remain unchanged (that is, the step height of M1 and M2 is 0mm), and adjust the step height of the M3 motor (respectively +5mm, +10mm and 0mm). Figures 7 to 9 It can be seen that the dust removal rate diagrams of the wafer are different at different heights of M3. The dust removal uniformity of M3 is the best at a height of +5 mm (Example 1) (i.e., non-uniformity = 17%), while at a height of +10 mm (Example 2) and 0 mm (Example 3), the dust removal uniformity is 27% and 24%, respectively.

[0099] Therefore, the deashing uniformity can be optimized by controlling the different positions of the nested quartz tubes to adjust the distribution density of plasma in different areas.

Claims

1. A plasma generating system, comprising a main body portion and a main body chamber surrounded by the main body portion, characterized in that: Also includes: A plasma generating portion and a plasma generating chamber disposed in the main chamber; a gas supply system configured to deliver one or more process gases into the plasma generating chamber; a gas distribution assembly for distributing one or more process gases into the plasma generating chamber via the gas distribution assembly, wherein a bottom surface of the gas distribution assembly is connected to a top surface of the plasma generating portion; a plasma source configured to generate a plasma from the one or more process gases within the plasma generation chamber; a guide device, disposed in the main chamber and configured to guide the flow direction of the plasma; as well as a connecting member configured to telescopically connect the gas distribution assembly and the guide device; A support component, the support component is connected to the main body through a central axis, and has a groove on the lower surface for the base of the guide device to be embedded; wherein the guide device includes a base and a guide portion extending downward from the base into the plasma generation chamber; and A central shaft, the top end of which is fixedly connected to the top plate of the main body, and the bottom end of which is rotatably connected to the supporting component, so that the guide part can deflect around the central shaft. 2 . The plasma generating system according to claim 1 , further comprising one or more driving devices respectively abutting against the top surface of the supporting member and configured to drive the guide device to move. 3 .

3. The plasma generation system according to claim 1, wherein: The connecting component includes a first end surface, a second end surface, and a telescopic portion connecting the first end surface and the second end surface.

4. The plasma generation system according to claim 3, wherein: The first end surface is attached to a bottom surface of the support member, and the second end surface is attached to a top surface of the gas distribution assembly.

5. The plasma generating system according to claim 1, wherein: The gas distribution assembly is disposed on the top of the plasma generating portion and is an annular structure having a plurality of through holes; and A bottom surface of the gas distribution assembly is connected to a top surface of the plasma generating portion.

6. The plasma generating system according to claim 1, wherein: The one or more driving devices are three motors arranged equidistantly in the circumferential direction.

7. The plasma generating system according to claim 1, wherein: The longitudinal deflection angle of the guide portion relative to the longitudinal axis of the guide device is in the range of 0 to 15°; and / or Relative to the longitudinal axis of the guide device, the vertical movement distance of the guide part is 0~100mm.

8. The plasma generating system according to any one of claims 1 to 5, wherein: The inner diameter of the guide portion is 0.3 to 0.8 times the diameter of the plasma generating chamber.

9. The plasma generating system according to any one of claims 1 to 5, wherein: The height of the portion of the guide portion in the plasma generating chamber is 0.3 to 0.9 times the height of the plasma generating chamber.

10. A plasma processing device for semiconductor workpieces, characterized in that: The invention comprises a plasma generating system according to any one of claims 1 to 9, and a plasma processing system.

11. A method for processing a semiconductor workpiece using the plasma generation system according to any one of claims 1 to 9, characterized in that: Includes steps: placing the semiconductor workpiece in a processing chamber, the semiconductor workpiece comprising an organic layer; generating a plasma from one or more process gases in a plasma generation chamber; adjusting the position of the guide device in the plasma generating chamber to adjust the plasma distribution density in the processing chamber; separating the plasma generating chamber from the processing chamber by a grid and filtering ions in the plasma; and The semiconductor workpiece is exposed to the plasma in the processing chamber.

12. The method according to claim 11, wherein: Adjusting the position of the guide device in the plasma generation chamber includes: Deflecting the guide portion longitudinally by an angle of 0 to 15° relative to the longitudinal axis of the guide device; and / or The guide portion is vertically moved by a distance of 0 to 100 mm relative to the longitudinal axis of the guide device.

13. The method according to claim 11, wherein: The process gas includes hydrogen and optionally nitrogen.

14. The method according to claim 13, wherein: The flow rate of hydrogen is in the range of 5000 to 10000 standard cubic centimeters per minute.

15. The method according to claim 13, wherein: When the process gas includes nitrogen, the flow rate of the nitrogen is in the range of 5000 to 10000 standard cubic centimeters per minute.

16. The method according to any one of claims 11 to 15, wherein: The total flow rate of the process gas is in the range of 1000 to 18000 standard cubic centimeters per minute.

17. The method according to any one of claims 11 to 15, wherein: During the plasma treatment, the pressure in the processing chamber is 900-1500 mTorr.

18. The method according to any one of claims 11 to 15, wherein: During the plasma treatment, the temperature in the processing chamber is 100-300°C.

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