Split type wafer supporting mechanism, process chamber, processing method and storage medium

Abstract

The invention provides a split type wafer supporting mechanism, a process chamber, a processing method and a storage medium. The split type wafer supporting mechanism comprises a plurality of first ring bodies, a plurality of second ring bodies and a first lifting mechanism. The plurality of first ring bodies are arranged in the process chamber through the plurality of first support rods and are used for supporting a plurality of first positions on the edge of the wafer. And the plurality of first support rods are positioned on the periphery of the spray header below the wafer. The plurality of second ring bodies are arranged in the process chamber through the plurality of second support rods and are used for supporting a plurality of second positions of the wafer edge. And the plurality of second support rods are positioned on the periphery of the spray header below the wafer. The first lifting mechanism is connected with the plurality of first ring bodies through a plurality of first supporting rods, and is used for lifting the plurality of first ring bodies to a preset wafer conveying position before a back deposition process is carried out on the wafer so as to receive the wafer conveyed into the process chamber, and lifting the plurality of first ring bodies to a process position when the back deposition process is carried out on the wafer so as to receive the wafer conveyed into the process chamber; the plurality of second rings support the edge of the wafer together with the plurality of second rings.

Description

Technical Field

[0001] The present invention relates to the technical field of thin film deposition, and in particular to a split wafer support mechanism, a process chamber, a method for processing a semiconductor device, and a computer-readable storage medium. Background Art

[0002] In the existing semiconductor processing equipment for backside deposition process, a heating plate is used above the process chamber to heat the wafer to be processed, and a shower head is used below to spray process gas onto the wafer. However, in the existing process chamber, a lifting pin is set in the center of the lower shower plate to perform the wafer transfer step. This setting will cause the spray holes on the surface of the shower head to be unevenly distributed, resulting in uneven distribution of process gas on the back side of the wafer, which in turn affects the uniformity of the film deposition thickness on the back side of the wafer.

[0003] In order to overcome the above-mentioned defects of the prior art, there is an urgent need in the art for an improved split wafer support mechanism for making the spray holes on the shower head more evenly distributed, thereby improving the uniformity of the thin film deposition thickness. Summary of the invention

[0004] A brief summary of one or more aspects is given below to provide a basic understanding of these aspects. This summary is not an exhaustive overview of all conceived aspects, and is neither intended to identify the key or decisive elements of all aspects nor to define the scope of any or all aspects. Its only purpose is to give some concepts of one or more aspects in a simplified form as a prelude to a more detailed description that will be given later.

[0005] In order to overcome the above-mentioned defects of the prior art, the present invention provides a split wafer support mechanism, a process chamber, a method for processing a semiconductor device and a computer-readable storage medium. A split wafer support structure that can be raised or lowered can be set to support the wafer to be raised or lowered for wafer transfer, so that the spray holes on the shower head are more evenly distributed, thereby improving the uniformity of the thin film deposition thickness.

[0006] Specifically, the split wafer support mechanism provided according to the first aspect of the present invention includes a plurality of first ring bodies, a plurality of second ring bodies and a first lifting mechanism. The plurality of first ring bodies are arranged inside the process chamber via a plurality of first support rods, and are used to support a plurality of first positions of the edge of the wafer to be processed, and expose the back side of the wafer. The plurality of first support rods are located at the periphery of the shower head below the wafer. The plurality of second ring bodies are arranged inside the process chamber via a plurality of second support rods, and are used to support a plurality of second positions of the edge of the wafer, and expose the back side of the wafer. The plurality of second support rods are located at the periphery of the shower head below the wafer. The first lifting mechanism connects the plurality of first ring bodies via the plurality of first support rods, and is used to lift the plurality of first ring bodies to a preset wafer transfer position before the back side deposition process is performed on the wafer, so as to receive the wafer introduced into the process chamber, and when the back side deposition process is performed on the wafer, lift the plurality of first ring bodies to the process position, so as to support the edge of the wafer together with the plurality of second ring bodies.

[0007] Further, in some embodiments of the present invention, the plurality of second ring bodies are respectively provided with a plurality of first gas channels. The bottoms of the plurality of second support rods are respectively provided with gas inlets. Inert gas is passed into the plurality of first gas channels from the gas inlets, and is passed into the front area above the wafer through the plurality of first gas channels to protect the front of the wafer.

[0008] Furthermore, in some embodiments of the present invention, an exhaust ring is further provided on the periphery of the wafer support mechanism. The exhaust height of the exhaust ring is higher than the process position. A plurality of second gas channels are provided on the plurality of first ring bodies. The inert gas enters the back area below the wafer from the front area above the wafer through the plurality of second gas channels, and is discharged from the process chamber through the exhaust ring.

[0009] Further, in some embodiments of the present invention, the plurality of second ring bodies are respectively provided with a plurality of the first gas channels. A first spacing is maintained between each two adjacent first gas channels. The plurality of first ring bodies are respectively provided with a plurality of the second gas channels. A second spacing is maintained between each two adjacent second gas channels. The first spacing and / or the second spacing is determined according to the concentration of the inert gas in the front area of ​​the wafer.

[0010] Furthermore, in some embodiments of the present invention, the wafer support mechanism further includes a second lifting mechanism. The second lifting mechanism is connected to the plurality of second ring bodies via the plurality of second support rods, and is used to control the lifting of the plurality of second ring bodies during the back side deposition process of the wafer, so as to adjust the first distance between the shower head and the back side of the wafer, thereby adjusting the process window of the thin film deposition process.

[0011] Furthermore, in some embodiments of the present invention, the wafer support mechanism further includes a distance sensor and a heating plate lifting mechanism. The distance sensor is connected to a plurality of the first ring bodies and is used to measure a second distance between the heating plate and the back side of the wafer. The heating plate lifting mechanism is connected to the top of the heating plate above the wafer and is used to control the lifting of the heating plate according to the second distance.

[0012] In addition, the above-mentioned process chamber provided according to the second aspect of the present invention includes a heating plate, a split wafer support mechanism as provided in the first aspect of the present invention, and a shower head. The heating plate is located at the top of the process chamber and is used to heat the wafer during the back deposition process of the wafer to be processed. The split wafer support mechanism is used to support multiple positions of the edge of the wafer and expose the back of the wafer. The shower head is located below the wafer support mechanism to spray process gas to the back of the wafer.

[0013] Furthermore, in some embodiments of the present invention, the process chamber further comprises a power input module and / or a heating plate lifting mechanism and / or a heating wire. The power input module is connected to the top of the heating plate, and is used to input power to the heating plate to control the heating plate to heat up to a preset process temperature. The heating plate lifting mechanism is connected to the top of the heating plate. The wafer support mechanism comprises a temperature sensor. The temperature sensor is used to measure the back surface temperature of the wafer. The heating plate lifting mechanism is used to control the lifting and lowering of the heating plate according to the back surface temperature. The heating wire is arranged at the bottom of the process chamber, and is used to raise the temperature in the process chamber to a preset process temperature.

[0014] Furthermore, in some embodiments of the present invention, the process chamber further comprises a process gas source and a cleaning gas source. The process gas source is connected to the process gas inlet of the process chamber, and is used to spray process gas to the back side of the wafer via the shower head during the back side deposition process of the wafer. The cleaning gas source is connected to the cleaning gas inlet of the process chamber, and is used to spray cleaning gas into the process chamber via the shower head after the back side deposition process is completed.

[0015] Furthermore, in some embodiments of the present invention, the process chamber further comprises an exhaust ring, the exhaust height of which is higher than the process position of the back deposition process. A plurality of second gas channels are provided on the plurality of first ring bodies of the wafer support mechanism. The inert gas enters the back area below the wafer from the front area above the wafer through the plurality of second gas channels, and is discharged from the process chamber through the exhaust ring.

[0016] In addition, the processing method of the above-mentioned semiconductor device provided according to the third aspect of the present invention includes the following steps: lifting and lowering a plurality of first ring bodies in the split wafer support mechanism of the process chamber provided by the second aspect of the present invention to a preset wafer transfer position to receive the wafer introduced into the process chamber; lifting and lowering the plurality of first ring bodies to the height of a plurality of second ring bodies to support the edge of the wafer together with the plurality of second ring bodies; performing back side deposition on the wafer; and in response to completing the back side deposition process, lifting and lowering the plurality of first ring bodies to the wafer changing position to remove the processed wafer from the process chamber.

[0017] Furthermore, in some embodiments of the present invention, the following step is also included: in response to completing the backside deposition process, spraying a cleaning gas into the process chamber via a cleaning gas source of the process chamber.

[0018] Furthermore, in some embodiments of the present invention, the following steps are also included: during the back side deposition process on the wafer, controlling the lifting and lowering of the multiple second ring bodies to adjust the first distance between the shower head and the back side of the wafer, thereby adjusting the process window of the thin film deposition process.

[0019] In addition, the computer-readable storage medium provided in the fourth aspect of the present invention stores computer instructions, which, when executed by a processor, implement the method for processing a semiconductor device provided in the third aspect of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] The above features and advantages of the present invention can be better understood after reading the detailed description of the embodiments of the present disclosure in conjunction with the following drawings. In the drawings, the components are not necessarily drawn to scale, and components with similar related properties or features may have the same or similar reference numerals.

[0021] Figure 1 A front cross-sectional view of a process chamber is shown with a wafer support mechanism provided according to some embodiments of the present invention raised and lowered to a wafer transfer position.

[0022] Figure 2 A front cross-sectional view of a process chamber is shown with a wafer support mechanism provided according to some embodiments of the present invention being raised and lowered to a process position.

[0023] Figure 3 A right side cross-sectional view of a process chamber provided according to some embodiments of the present invention is shown.

[0024] Figure 4A A schematic structural diagram of a first gas channel provided according to some embodiments of the present invention is shown.

[0025] Figure 4BA schematic structural diagram of a second gas channel provided according to some embodiments of the present invention is shown.

[0026] Figure 5 A top cross-sectional view of a wafer support mechanism provided according to some embodiments of the present invention is shown.

[0027] Figure 6 A schematic flow chart of a method for processing a semiconductor device according to some embodiments of the present invention is shown. DETAILED DESCRIPTION

[0028] The following specific embodiments illustrate the implementation of the present invention, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. Although the description of the present invention will be introduced in conjunction with the preferred embodiment, this does not mean that the features of this invention are limited to this implementation. On the contrary, the purpose of introducing the invention in conjunction with the implementation is to cover other options or modifications that may be extended based on the claims of the present invention. In order to provide a deep understanding of the present invention, the following description will include many specific details. The present invention can also be implemented without using these details. In addition, in order to avoid confusion or blurring the focus of the present invention, some specific details will be omitted in the description.

[0029] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0030] In addition, the terms "upper", "lower", "left", "right", "top", "bottom", "horizontal" and "vertical" used in the following description should be understood as the directions shown in the paragraph and the related drawings. Such relative terms are only used for the convenience of description and do not mean that the device described therein must be manufactured or operated in a specific direction, and therefore should not be understood as limiting the present invention.

[0031] It is understood that although the terms "first", "second", "third", etc. may be used herein to describe various components, regions, layers and / or parts, these components, regions, layers and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers and / or parts. Therefore, the first component, region, layer and / or part discussed below may be referred to as a second component, region, layer and / or part without departing from some embodiments of the present invention.

[0032] As described above, in the existing processing equipment for semiconductor devices for backside deposition process, a heating plate is used above the process chamber to heat the wafer to be processed, and a shower head is used below to spray process gas onto the wafer. However, in the existing process chamber, a lifting pin is set in the center of the lower shower plate to perform the wafer transfer step. This setting will cause the spray holes on the surface of the shower head to be unevenly distributed, resulting in uneven distribution of process gas on the back side of the wafer, which in turn leads to uneven thickness of thin film deposition.

[0033] In order to overcome the above-mentioned defects of the prior art, the present invention provides a split wafer support mechanism, a process chamber, a method for processing a semiconductor device and a computer-readable storage medium. A split wafer support structure that can be raised or lowered can be set to support the wafer to be raised or lowered for wafer transfer, so that the spray holes on the shower head are more evenly distributed, thereby improving the uniformity of the thin film deposition thickness.

[0034] In some non-limiting embodiments, the processing method of the semiconductor device provided in the third aspect may be implemented by the process chamber provided in the second aspect.

[0035] Please refer to the reference for details Figure 1 to Figure 3 . Figure 1 A front cross-sectional view of a process chamber is shown with a wafer support mechanism provided according to some embodiments of the present invention raised and lowered to a wafer transfer position. Figure 2 A front cross-sectional view of a process chamber is shown with a wafer support mechanism provided according to some embodiments of the present invention being raised and lowered to a process position. Figure 3 A right side cross-sectional view of a process chamber provided according to some embodiments of the present invention is shown.

[0036] exist Figure 1 to Figure 3 In the illustrated embodiment, the process chamber provided by the second aspect of the present invention comprises a heating plate 11, a split wafer support mechanism provided by the first aspect of the present invention, and a shower head 12. Here, the heating plate 11 is located at the top of the process chamber, and is used to heat the wafer during the back deposition process of the wafer to be processed. The split wafer support mechanism is used to support multiple positions of the edge of the wafer and expose the back of the wafer. The shower head 12 is located below the wafer support mechanism to spray process gas to the back of the wafer.

[0037] In addition, Figure 1 to Figure 3 In the illustrated embodiment, the process chamber provided by the second aspect of the present invention further includes a power input module 111 and a heating wire 13. Here, the power input module 111 is connected to the top of the heating disk 11, and is used to input power to the heating disk 11 to control the heating disk 11 to heat up to a preset process temperature. The heating wire 13 is arranged at the bottom of the process chamber, and is used to raise the temperature in the process chamber to a preset process temperature.

[0038] In addition, Figure 1 to Figure 3 In the illustrated embodiment, the process chamber provided by the second aspect of the present invention further includes a process gas source and a cleaning gas source. Here, the process gas source includes a process gas inlet 15, which is used to spray process gas to the back side of the wafer via the shower head 12 during the back side deposition process of the wafer. The cleaning gas source includes a cleaning gas inlet 16, which is used to spray cleaning gas into the process chamber via the shower head 12 after the back side deposition process is completed.

[0039] In addition, Figure 1 to Figure 3 In the illustrated embodiment, the process chamber provided by the second aspect of the present invention further includes an exhaust ring 17, whose exhaust height is higher than the process position of the back deposition process. Here, a plurality of second gas channels are provided on the plurality of first ring bodies 142 of the wafer support mechanism, and the inert gas enters the side of the wafer from the front area above the wafer through the plurality of second gas channels, and is discharged from the process chamber through the exhaust ring 17.

[0040] Those skilled in the art can understand that the above-mentioned embodiments of setting the pumping height of the pumping ring to be higher than the process position are only some non-limiting embodiments provided by the present invention, which are intended to clearly demonstrate the main concept of the present invention and provide some specific solutions that are convenient for the public to implement, rather than to limit the scope of protection of the present invention. Optionally, in other embodiments, the pumping position of the pumping ring can be set to the side of the process position of the back deposition process, and its pumping height can also be lower than or equal to the height of the process position.

[0041] In addition, Figure 1 to Figure 3 In the illustrated embodiment, the process chamber provided in the second aspect of the present invention further includes a gas uniformizing plate 18 for making the process gas or cleaning gas outputted from the process gas source or cleaning gas source uniform.

[0042] In addition, Figure 1 to Figure 3 In the illustrated embodiment, the process chamber provided by the second aspect of the present invention further includes a transfer block 191 and a bellows 192. Here, the transfer block 191 is connected to the top of the process chamber by a bellows 192, and when the heating plate 11 moves up and down, the displacement stroke of tension and compression can be effectively sealed.

[0043] In addition, in some non-limiting embodiments, the process chamber provided in the second aspect may also be configured with a memory and a controller. The memory includes but is not limited to the computer-readable storage medium provided in the fourth aspect, on which computer instructions are stored. The controller is connected to the memory and is configured to execute the computer instructions stored in the memory to implement the semiconductor device processing method provided in the third aspect.

[0044] Further, in Figure 1 to Figure 3 In the illustrated embodiment, the split wafer support mechanism provided by the first aspect of the present invention includes a plurality of first ring bodies 142, a plurality of second ring bodies 143, and a first lifting mechanism 144. The plurality of first ring bodies 142 are arranged inside the process chamber via a plurality of first support rods 1421, and are used to support a plurality of first positions of the edge of the wafer to be processed and expose the back side of the wafer. Here, the plurality of first support rods 1421 are located at the periphery of the shower head 12 below the wafer.

[0045] Specifically, a plurality of first support rods 1421 are sealed and pass through from the inside of the process chamber to the outside of the process chamber. The first support rod 1421 is connected to the first ring body 142 above one end inside the process chamber and is connected to the first lifting mechanism 144 below one end outside the process chamber.

[0046] Similarly, the plurality of second ring bodies 143 are arranged inside the process chamber via a plurality of second support rods 1431, and are used to support a plurality of second positions of the edge of the wafer and expose the back side of the wafer, wherein the plurality of second support rods 1431 are located at the periphery of the shower head 12 below the wafer. The first lifting mechanism 144 is connected to the plurality of first ring bodies 142 via a plurality of first support rods 1421, and is used to lift the plurality of first ring bodies 142 to a preset wafer transfer position before performing a back side deposition process on the wafer, so as to receive the wafer introduced into the process chamber, and to lift the plurality of first ring bodies 142 to a process position when performing a back side deposition process on the wafer, so as to support the edge of the wafer together with the plurality of second ring bodies 143.

[0047] Here, the inner ring diameters of the first ring body 142 and the second ring body 143 are smaller than the diameter of the shower head 12 , so that the entire wafer surface is completely located within the diameter range of the shower head 12 .

[0048] Please refer to the following for further reference Figure 4A , Figure 4B and Figure 5 . Figure 4A A schematic structural diagram of a first gas channel provided according to some embodiments of the present invention is shown. Figure 4B A schematic structural diagram of a second gas channel provided according to some embodiments of the present invention is shown. Figure 5 A top cross-sectional view of a wafer support mechanism provided according to some embodiments of the present invention is shown.

[0049] like Figure 4A As shown, a plurality of first gas channels 1432 are respectively provided on the plurality of second ring bodies 143, and a gas inlet 1433 is respectively provided at the bottom of the plurality of second support rods 1431. Here, the inert gas flows into the plurality of first gas channels 1432 from the gas inlet 1433, and flows into the front area above the wafer through the plurality of first gas channels 1432 to protect the front of the wafer.

[0050] like Figure 2 As shown, the periphery of the wafer support mechanism is also provided with an exhaust ring 17, and the exhaust height of the exhaust ring 17 is higher than the process position. Figure 4B As shown, multiple second gas channels 1422 are provided on the multiple first ring bodies 142 , and the inert gas enters the back area below the wafer from the front area above the wafer through the multiple second gas channels 1422 , and is discharged from the process chamber through the exhaust ring 17 .

[0051] In this way, the above-mentioned split wafer support mechanism provided in the first aspect of the present invention can directly pass the inert gas into the front area above the wafer through the gas inlet 1433 and the multiple first gas channels 1432 to protect the front of the wafer and prevent the front of the wafer from being damaged. Afterwards, the excess inert gas can be allowed to enter the back area below the wafer from the front area above the wafer through the second gas channel 1422, and be discharged from the process chamber through the exhaust ring 17. Therefore, it can be effectively ensured that there is sufficient inert gas in the front area above the wafer to protect the wafer, avoiding the problem of too fast inert gas exhaust speed and failure to protect the wafer due to the exhaust ring 17 being directly set in the front area above the wafer.

[0052] Further, in Figure 5 In the illustrated embodiment, a plurality of first gas channels 1432 are preferably provided on the plurality of second ring bodies 143, and a first spacing is maintained between each two adjacent first gas channels 1432. Similarly, a plurality of second gas channels 1422 are preferably provided on the plurality of first ring bodies 142, and a second spacing is maintained between each two adjacent second gas channels 1422. Here, the first spacing and / or the second spacing is determined according to the concentration of the inert gas in the front area of ​​the wafer. For example, in the case where the required inert gas concentration in the front area of ​​the wafer is high, the first spacing of the first gas channels 1432 can be reduced, and the second spacing of the second gas channels 1422 can be increased to increase the speed of passing the inert gas and reduce the speed of extracting the inert gas. Conversely, in the case where the required inert gas concentration in the front area of ​​the wafer is low, the first spacing of the first gas channels 1432 can be increased, and the second spacing of the second gas channels 1422 can be reduced to reduce the speed of passing the inert gas and increase the speed of extracting the inert gas.

[0053] In addition, Figure 3In the illustrated embodiment, the wafer support mechanism provided by the first aspect of the present invention preferably also includes a second lifting mechanism 145, which connects a plurality of second ring bodies 143 via a plurality of second support rods 1431, and is used to control the lifting and lowering of the plurality of second ring bodies 143 during a back-side deposition process on the wafer, so as to adjust a first distance between the shower head and the back side of the wafer, thereby adjusting the process window of the thin film deposition process.

[0054] In addition, Figure 1 and Figure 2 In the illustrated embodiment, the wafer support mechanism provided by the first aspect of the present invention preferably further includes a distance sensor 141 and a heating plate lifting mechanism 112. Here, the distance sensor 141 is connected to a plurality of first ring bodies 142, and is used to measure the second distance between the heating plate 11 and the back of the wafer. The heating plate lifting mechanism 112 is connected to the top of the heating plate 11, and is used to control the lifting of the heating plate 11 according to the second distance. Here, the distance sensor can be selected from any one of a laser sensor, a force sensor or an acoustic wave sensor.

[0055] The working principle of the above-mentioned process chamber will be described below in conjunction with some embodiments of the processing methods of semiconductor devices. Those skilled in the art will understand that the embodiments of these processing methods are only some non-limiting implementation methods provided by the present invention, which are intended to clearly demonstrate the main concept of the present invention and provide some specific solutions that are convenient for the public to implement, rather than limiting all functions or all working modes of the process chamber. Similarly, the process chamber is also only a non-limiting implementation method provided by the present invention, and does not constitute a limitation on the execution subject and execution order of each step in the processing methods of these semiconductor devices.

[0056] Please refer to Figure 6 . Figure 6 A schematic flow chart of a method for processing a semiconductor device according to some embodiments of the present invention is shown.

[0057] like Figure 6 As shown, the controller in the process chamber provided by the second aspect of the present invention can first lift the multiple first ring bodies 142 in the split wafer support mechanism to a preset wafer transfer position to receive the wafer introduced into the process chamber. Afterwards, the controller can lift the multiple first ring bodies 142 to the height of the multiple second ring bodies 143 to support the edge of the wafer together with the multiple second ring bodies 143.

[0058] After that, the controller can perform back deposition on the wafer. Specifically, during the back deposition on the wafer, the controller can obtain a second distance between the heating plate 11 and the wafer, and according to the second distance, the heating plate lifting mechanism 112 can lift the heating plate 11 at least once to adjust the distance between the heating plate 11 and the back of the wafer.

[0059] Furthermore, in some preferred embodiments, the controller may also control the lifting and lowering of the plurality of second ring bodies 143 during the backside deposition process on the wafer to adjust the first distance between the shower head 12 and the backside of the wafer, thereby adjusting the process window of the thin film deposition process.

[0060] Thereafter, in response to the completion of the backside deposition process, the controller may lift the plurality of first ring bodies 142 to a wafer exchange position to take out the processed wafers from the process chamber.

[0061] Furthermore, in some preferred embodiments, in response to the completion of the backside deposition process, the controller may further spray a cleaning gas into the process chamber via a cleaning gas inlet 16 of a cleaning gas source of the process chamber to clean the process chamber.

[0062] In summary, the present invention provides a split wafer support mechanism, a process chamber, a semiconductor device processing method and a computer-readable storage medium, all of which can control the wafer lifting and lowering for wafer transfer by setting a liftable split wafer support structure, so that the spray holes on the spray head are more evenly distributed, thereby improving the uniformity of the thin film deposition thickness.

[0063] Although the above methods are illustrated and described as a series of actions for simplicity of explanation, it should be understood and appreciated that these methods are not limited by the order of the actions, because according to one or more embodiments, some actions may occur in a different order and / or concurrently with other actions from those illustrated and described herein or not illustrated and described herein but understandable to those skilled in the art.

[0064] The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein, but should be granted the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A split wafer support mechanism, characterized in that: include: A plurality of first ring bodies are arranged inside the process chamber via a plurality of first support rods, and are used to support a plurality of first positions of the edge of the wafer to be processed and expose the back side of the wafer, wherein the plurality of first support rods are located at the periphery of the shower head below the wafer; A plurality of second ring bodies are disposed inside the process chamber via a plurality of second support rods, and are used to support a plurality of second positions of the edge of the wafer and expose the back side of the wafer, wherein the plurality of second support rods are located at the periphery of the shower head below the wafer; and The first lifting mechanism connects the multiple first ring bodies via the multiple first support rods, and is used to lift the multiple first ring bodies to a preset wafer transfer position before performing a back side deposition process on the wafer to receive the wafer introduced into the process chamber, and to lift the multiple first ring bodies to a process position when performing a back side deposition process on the wafer to support the edge of the wafer together with the multiple second ring bodies.

2. The wafer support mechanism according to claim 1, wherein: A plurality of first gas channels are respectively provided on the plurality of second ring bodies, and a gas inlet is respectively provided at the bottom of the plurality of second support rods, wherein the inert gas enters the plurality of first gas channels from the gas inlet and enters the front area above the wafer through the plurality of first gas channels to protect the front surface of the wafer.

3. The wafer support mechanism according to claim 2, characterized in that: A vacuum ring is also provided on the periphery of the wafer support mechanism, and the vacuum height of the vacuum ring is higher than the process position. A plurality of second gas channels are provided on the plurality of first ring bodies, and the inert gas enters the back area below the wafer from the front area above the wafer through the plurality of second gas channels, and is discharged from the process chamber through the exhaust ring.

4. The wafer support mechanism according to claim 3, characterized in that: The plurality of second ring bodies are respectively provided with a plurality of the first gas channels, and a first distance is maintained between each two adjacent first gas channels. A plurality of the second gas channels are respectively provided on the plurality of first ring bodies, wherein a second spacing is maintained between every two adjacent second gas channels, and the first spacing and / or the second spacing is determined according to the concentration of the inert gas in the front area of ​​the wafer.

5. The wafer support mechanism according to claim 1, wherein: Also includes: The second lifting mechanism is connected to the plurality of second ring bodies via the plurality of second support rods, and is used to control the lifting and lowering of the plurality of second ring bodies during the back side deposition process on the wafer, so as to adjust the first distance between the shower head and the back side of the wafer, thereby adjusting the process window of the thin film deposition process.

6. The wafer support mechanism according to claim 1, wherein: Also includes: A distance sensor, connected to the plurality of the first ring bodies, for measuring a second distance between the heating plate and the back side of the wafer; as well as A heating plate lifting mechanism is connected to the top of the heating plate above the wafer and is used to control the lifting of the heating plate according to the second distance.

7. A process chamber, characterized in that: include: A heating plate, located at the top of the process chamber, for heating the wafer during the backside deposition process of the wafer to be processed; The split wafer support mechanism according to any one of claims 1 to 6, used to support multiple positions of the edge of the wafer and expose the back side of the wafer; as well as The shower head is located below the wafer supporting mechanism to spray process gas onto the back side of the wafer.

8. The process chamber according to claim 7, characterized in that: Also includes: A power input module, connected to the top of the heating plate, for inputting power to the heating plate to control the heating plate to heat up to a preset process temperature; and / or The heating wire is arranged at the bottom of the process chamber and is used to increase the temperature in the process chamber to the process temperature.

9. The process chamber according to claim 7, characterized in that: Also includes: a process gas source, wherein the process gas source is connected to a process gas inlet of the process chamber and is used to spray process gas to the back side of the wafer via the shower head during a back side deposition process on the wafer; and A cleaning gas source is connected to a cleaning gas inlet of the process chamber and is used to spray cleaning gas into the process chamber via the shower head after the backside deposition process is completed.

10. The process chamber according to claim 7, wherein: Also includes: An exhaust ring, whose exhaust height is higher than the process position of the back side deposition process, wherein a plurality of second gas channels are provided on a plurality of first ring bodies of the wafer support mechanism, and the inert gas enters from the front area above the wafer into the back area below the wafer through the plurality of second gas channels, and is discharged from the process chamber through the exhaust ring.

11. A method for processing a semiconductor device, characterized in that: The following steps are involved: Lifting a plurality of first ring bodies in the split wafer support mechanism of the process chamber according to any one of claims 8 to 10 to a preset wafer transfer position to receive the wafers introduced into the process chamber; Lifting the plurality of first ring bodies to a height of the plurality of second ring bodies, so as to support the edge of the wafer together with the plurality of second ring bodies; performing backside deposition on the wafer; as well as In response to the completion of the backside deposition process, the plurality of first ring bodies are lifted and lowered to the wafer changing position to take out the processed wafer from the process chamber.

12. The processing method according to claim 11, characterized in that: The following steps are also included: In response to completing the backside deposition process, a cleaning gas is sprayed into the process chamber via a cleaning gas source of the process chamber.

13. The processing method according to claim 11, characterized in that: The following steps are also included: During the backside deposition process on the wafer, the plurality of second ring bodies are controlled to rise and fall to adjust a first distance between the shower head and the backside of the wafer, thereby adjusting a process window of the thin film deposition process.

14. A computer-readable storage medium having computer instructions stored thereon, characterized in that: When the computer instructions are executed by a processor, the method for processing a semiconductor device according to any one of claims 11 to 13 is implemented.

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