Zigzag microstrip line slow-wave structure based on high-conductivity graphene film

Abstract

The invention discloses a zigzag microstrip line slow-wave structure based on a high-conductivity graphene film, and belongs to the field of microwave electric vacuum. The zigzag microstrip line slow wave structure is composed of a zigzag microstrip line and microstrip probe transition structure, a dielectric substrate, a metal waveguide cavity, an input waveguide and an output waveguide, the zigzag microstrip line is a zigzag microstrip line which is formed by transferring a high-conductivity graphene film to the dielectric substrate and performing laser etching, and the zigzag microstrip line is placed in the metal waveguide cavity; two ends of the zigzag microstrip line are respectively connected with the input waveguide and the output waveguide through the microstrip probe transition structure. Through reasonable design of the graphene microstrip line and optimal design of the transition waveguide and the microstrip probe, good transmission characteristics are obtained, and the zigzag microstrip line slow wave structure has the advantages of simple structure, small size and the like. The volume of the traveling wave tube can be effectively reduced, the processing cost of the planar traveling wave tube is reduced, and the planar traveling wave tube has relatively high repeatability and can be suitable for a slow wave structure of a miniaturized planar traveling wave tube.

Description

Technical Field

[0001] The invention relates to the field of microwave electric vacuum technology, and in particular to a zigzag microstrip line slow-wave structure based on a high-conductivity graphene film. Background Art

[0002] Traveling wave tubes are the most important type of millimeter wave radiation source in the field of vacuum electronics, with high power and wide bandwidth characteristics. They are widely used in many fields of modern military and national economy, such as satellite communications, phased array radars, electronic countermeasures, etc. With the rapid development of military electronic equipment and millimeter wave communication technology, there is an urgent need for traveling wave tubes with high power, high efficiency, wide bandwidth and small size.

[0003] The microstrip zigzag slow-wave structure based on micro-machining technology such as deep reactive ion etching or photolithography has many characteristics such as easy processing, low cost, small size and light weight, and has become an important research direction for miniaturized planar traveling wave tubes. For the research on planar traveling wave tubes, their slow-wave structures all use traditional metal materials, which have large structures, poor conductivity, and high costs. Summary of the invention

[0004] The present invention provides a zigzag microstrip line slow-wave structure based on a high-conductivity graphene film, which has the advantages of simple structure, small size, etc., can effectively reduce the volume of a traveling wave tube, reduce the processing cost of a planar traveling wave tube and has high repeatability.

[0005] The embodiment of the present invention provides a meandering microstrip line slow-wave structure based on a high-conductivity graphene film, comprising: a meandering microstrip line, a dielectric substrate, a metal waveguide cavity, a microstrip probe transition structure, an input waveguide and an output waveguide;

[0006] Wherein, the zigzag microstrip line is a zigzag microstrip line formed by transferring a high-conductivity graphene film onto the dielectric substrate and then being laser-etched, and is placed in the metal waveguide cavity;

[0007] Two ends of the meandering microstrip line are respectively connected to the input waveguide and the output waveguide through the microstrip probe transition structure.

[0008] Optionally, in one embodiment of the present invention, the microstrip probe transition structure is a high-conductivity graphene film that is the same as the meandering microstrip line.

[0009] Optionally, in one embodiment of the present invention, the meandering microstrip line is formed by an arrangement and combination of a plurality of graphene lines with periodic cross sections of U-shape, V-shape or N-shape at equal intervals.

[0010] Optionally, in one embodiment of the present invention, the material of the dielectric substrate includes quartz, aluminum oxide, boron nitride, or beryllium oxide.

[0011] Optionally, in one embodiment of the present invention, the operating frequency band of the input waveguide and the output waveguide is W band.

[0012] Optionally, in one embodiment of the present invention, the thickness t of the meander microstrip line is 15-20 μm; the thickness h of the dielectric substrate is 200 μm, and the dielectric constant is 3.8; and the internal height of the metal waveguide cavity is 500 μm.

[0013] The zigzag microstrip line slow-wave structure based on high-conductivity graphene film in the embodiment of the present invention obtains good transmission characteristics through the reasonable design of the graphene microstrip line and the optimized design of the transition waveguide and the microstrip probe. At the same time, the zigzag line slow-wave structure based on the high-conductivity graphene film microstrip has the advantages of simple structure and small size, which can effectively reduce the volume of the traveling wave tube, reduce the processing cost of the planar traveling wave tube and has high repeatability, and can be applied to the slow-wave structure of the miniaturized planar traveling wave tube.

[0014] Additional aspects and advantages of the present invention will be given in part in the following description and in part will be obvious from the following description, or will be learned through practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] The above and / or additional aspects and advantages of the present invention will become apparent and easily understood from the following description of the embodiments in conjunction with the accompanying drawings, in which:

[0016] Figure 1 A side view of a meandering microstrip line slow-wave structure based on a high-conductivity graphene film provided according to an embodiment of the present invention;

[0017] Figure 2 It is a front view of the dimensions of the meander microstrip line slow-wave structure according to an embodiment of the present invention;

[0018] Figure 3 A diagram showing the size parameters of a meandering microstrip line slow-wave structure unit according to an embodiment of the present invention;

[0019] Figure 4 1 is a transmission characteristic curve of a meandering microstrip line slow-wave structure according to an embodiment of the present invention. DETAILED DESCRIPTION

[0020] Embodiments of the present invention are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are intended to be used to explain the present invention, and should not be construed as limiting the present invention.

[0021] Figure 1A side view of a meandering microstrip line slow-wave structure based on a high-conductivity graphene film provided according to an embodiment of the present invention.

[0022] like Figure 1 As shown, the meandering microstrip line slow-wave structure based on high-conductivity graphene film includes: a meandering microstrip line 1, a dielectric substrate 2, a metal waveguide cavity 3, a microstrip probe transition structure 4, an input waveguide 5 and an output waveguide 6.

[0023] The meandering microstrip line 1 is a meandering microstrip line formed by transferring a high-conductivity graphene film onto a dielectric substrate 2 and then being etched by laser, and is placed in a metal waveguide cavity 3;

[0024] Two ends of the meandering microstrip line 1 are connected to an input waveguide 5 and an output waveguide 6 respectively through a microstrip probe transition structure 4 .

[0025] In the embodiment of the present invention, both the meandering microstrip line 1 and the microstrip probe transition structure 2 use high conductivity graphene film. High conductivity graphene film has excellent electrical conductivity, and its electrical conductivity can reach 10 6 S / m, with a thickness of more than ten microns. Compared with traditional metal materials, high-conductivity graphene films can be mass-produced to reduce the cost of use, and have the unique properties of graphene materials such as high temperature resistance, corrosion resistance, and high thermal conductivity. They can also be easily patterned and etched through laser engraving technology.

[0026] In an embodiment of the present invention, the meandering microstrip line 1 is composed of a plurality of periodic cross sections including but not limited to U-shaped, V-shaped, and N-shaped graphene lines arranged at equal intervals. The conductivity of the graphene film is as high as 1.1*10 6 S / m, thermal conductivity 1200-5000W / mk.

[0027] In the embodiment of the present invention, the material of the dielectric substrate 2 includes but is not limited to quartz, aluminum oxide, boron nitride, and beryllium oxide.

[0028] In the embodiment of the present invention, the operating frequency bands of the input waveguide 5 and the output waveguide 6 include but are not limited to the W band.

[0029] like Figure 2 The figure shows the side view of the U-shaped slow wave structure. The high conductivity graphene film is transferred to the dielectric substrate of quartz and laser etched into a U-shaped microstrip line, which is placed in the metal waveguide cavity. The thickness t of the U-shaped microstrip line based on the high conductivity graphene film is 15-20μm. The thickness h of the quartz substrate is 200μm, and its dielectric constant is 3.8. The height ha inside the metal cavity is 500μm.

[0030] like Figure 3As shown in the figure, the U-shaped microstrip line structure size parameters are shown. The length of a single period is set to p, the width of the microstrip line is w, the length of the straight part of the meander line is l, the distance between the microstrip line and the top of the dielectric substrate is a, and the spacing between the straight parts of the meander line is b(p-2w) / 2. In the embodiment of the present invention, p = 110μm, w = 30μm, l = 50μm, a = 567.5μm, b = 50μm. According to the above slow-wave structure size parameters, a U-shaped microstrip line slow-wave structure transmission model is established, and the following is designed: Figure 1 The microstrip probe transition structure 4 is inserted into the W-band standard waveguide from the E surface to achieve effective matching between the microstrip probe and the waveguide.

[0031] In CST software, the time domain solver is used to Figure 1 The U-shaped microstrip line slow-wave structure shown is simulated and calculated to obtain its transmission characteristic curve. Figure 4 The S parameter simulation results show that in the range of 80.4-86.4GHz, the -15dB bandwidth is 6GHz and S21>-0.5dB. The results show that the designed U-shaped microstrip line slow-wave structure based on high conductivity graphene film has good transmission characteristics.

[0032] The zigzag microstrip line slow-wave structure based on high-conductivity graphene film in the embodiment of the present invention obtains good transmission characteristics through the reasonable design of the graphene microstrip line and the optimized design of the transition waveguide and the microstrip probe. At the same time, the zigzag line slow-wave structure based on the high-conductivity graphene film microstrip has the advantages of simple structure and small size, which can effectively reduce the volume of the traveling wave tube, reduce the processing cost of the planar traveling wave tube and has high repeatability, and can be applied to the slow-wave structure of the miniaturized planar traveling wave tube.

[0033] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or N embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, without contradiction.

[0034] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In the description of the present invention, the meaning of "N" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

Claims

1. A zigzag microstrip line slow-wave structure based on high conductivity graphene film, characterized in that: include: Meandering microstrip line, dielectric substrate, metal waveguide cavity, microstrip probe transition structure, input waveguide and output waveguide; Wherein, the zigzag microstrip line is a zigzag microstrip line formed by transferring a high-conductivity graphene film onto the dielectric substrate and then being laser-etched, and is placed in the metal waveguide cavity; Two ends of the meandering microstrip line are respectively connected to the input waveguide and the output waveguide through the microstrip probe transition structure.

2. The method according to claim 1, characterized in that The microstrip probe transition structure is a high-conductivity graphene film that is the same as the meandering microstrip line.

3. The method according to claim 1, characterized in that: The meandering microstrip line is composed of a plurality of graphene lines with periodic cross sections of U-shape, V-shape or N-shape arranged and combined at equal intervals.

4. The method according to claim 1, characterized in that: The material of the dielectric substrate includes quartz, aluminum oxide, boron nitride and beryllium oxide.

5. The method according to claim 1, characterized in that The operating frequency band of the input waveguide and the output waveguide is the W band.

6. The method according to claim 1, characterized in that The thickness t of the meander microstrip line is 15-20 μm; The thickness h of the dielectric substrate is 200 μm, and the dielectric constant is 3.8; The inner height of the metal waveguide cavity is 500 μm.

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