Plasma source cluster and PECVD (plasma enhanced chemical vapor deposition) equipment

Abstract

The invention provides a plasma source cluster and PECVD (plasma enhanced chemical vapor deposition) equipment. The plasma source cluster comprises a plurality of plasma sources and a mounting seat; each plasma source comprises an upper cover, an insulating shell, an insulating medium cylinder, a capacitor electrode plate and an inductance coil; the upper cover is fixed on the insulating shell in a sealing manner and is provided with a gas inlet channel, and the gas inlet channel is shared by coating gas and cleaning gas; the insulating shell is provided with a hollow cavity; the insulating medium cylinder occupies the position, close to the upper cover, of the hollow cavity, so that the part, away from the upper cover, of the hollow cavity is a whole cavity part which is kept empty and not occupied, the insulating medium cylinder is provided with a plurality of through holes, and the through holes are communicated with the air inlet channel and the whole cavity part; the capacitor electrode plate is arranged on the insulating medium cylinder so as to form capacitors at the through holes; the inductance coil is wound outside the insulating shell and corresponds to the integral cavity part; the mounting seat is provided with an inner cavity, a plurality of upper openings and a lower opening; the insulating shell of each plasma source is installed on one corresponding upper opening, and the lower opening is used for being communicated with the process cavity.

Description

Technical Field

[0001] The present disclosure relates to the semiconductor field, and more particularly to a plasma source cluster and a PECVD device. Background Art

[0002] Plasma Enhanced Chemical Vapor Deposition (PECVD) is a coating method widely used in the field of semiconductor and photovoltaic manufacturing. General PECVD equipment uses an external RF power supply to connect the cathode plate and the remote plasma source (RPS) to form plasma, decompose the precursor gas into plasma or atomic state, and then complete the deposition or treatment of the process film layer.

[0003] In the PECVD used in photovoltaic heterojunction production, there are generally two plasma generation systems, such as Figure 1 and Figure 2 As shown, one set is a radio frequency power supply, which is responsible for feeding an alternating electric field at the upper and lower ends of the process chamber to plate amorphous silicon or microcrystalline silicon thin films to form the film structure required for solar cells. At the same time, the thin film will not only be deposited on the surface of the silicon wafer, but also on the process carrier and the inner wall of the process chamber. The other set is a remote plasma source system, which ionizes the etching gas into active atoms or ions, and then passes it into the process chamber to etch and remove the amorphous silicon and microcrystalline silicon thin films on the carrier and inside the process chamber.

[0004] exist Figure 1 and Figure 2 In the photovoltaic PECVD device shown, the PECVD device passes the deposition coating gas into the process chamber (Process Chamber, PC), and the deposition coating gas forms plasma near the cathode plate connected to the RF power supply to perform deposition coating, or uses a single remote plasma source to decompose and ionize the excited cleaning gas and then pass it into the process chamber through the central gas path.

[0005] exist Figure 1 and Figure 2 In a PECVD device, a single RPS inputs plasma, and it is difficult for the etched material to evenly cover the entire substrate surface. Generally speaking, the etching rate in the middle is fast, and the etching rate around is slow. This increases the reaction time and may cause damage to the substrate, such as Figure 3 As shown, the shaded area is the area where the reaction speed is slow when cleaning the carrier. Similarly, when using remote plasma deposition to coat the film, the film layer is also prone to uneven coating in the shaded area of ​​the carrier.

[0006] The RPS of a single process chamber uses ICP to generate plasma, but in actual use, to clean the amorphous silicon film layer on the PECVD, the size of a single RPS reaction chamber needs to be larger than 10L or more. A larger reaction chamber will cause the etching gas decomposition rate to decrease, and the actual usage will be reduced. To achieve a better etching effect, a large amount of etching gas needs to be introduced, resulting in high costs. Summary of the invention

[0007] In view of the problems existing in the background technology, an object of the present disclosure is to provide a plasma source cluster and a PECVD device, which can improve the uniformity of the deposited coating and the uniformity of the film cleaning process.

[0008] Another object of the present disclosure is to provide a plasma source cluster and a PECVD device, which can improve the coating reaction rate and the cleaning and etching rate and save process gas.

[0009] Thus, a plasma source cluster is provided, which includes a plurality of plasma sources spaced apart from each other and a mounting seat; each plasma source includes an upper cover, an insulating shell, an insulating dielectric column, a capacitor electrode sheet, and an inductor; the upper cover is sealed and fixed on the insulating shell, and the upper cover has an axially through-going air inlet, which is used to introduce a process gas of a deposition coating gas or a cleaning gas and is shared by the coating gas and the cleaning gas; the insulating shell has a hollow cavity; the insulating dielectric column occupies a position of the hollow cavity of the insulating shell close to the upper cover so that the portion of the hollow cavity of the insulating shell located away from the upper cover by the insulating dielectric column is an empty and unoccupied overall cavity, the insulating dielectric column has a plurality of through holes spaced apart from each other and through along the axial direction, each through hole is connected to the air inlet and the overall cavity; the capacitor electrode sheet is arranged on the insulating dielectric column so that the capacitor electrode sheet and the insulating dielectric column at each through hole together form a capacitor at each through hole, and the capacitor electrode sheet The container is used to make the process gas entering through the air inlet generate capacitively coupled plasma in the capacitors formed by each through hole, and the capacitively coupled plasma is discharged to the overall cavity; the inductor coil is wound on the outside of the insulating shell and corresponds to the overall cavity of the hollow cavity of the insulating shell in position, and the inductor coil is used to make the capacitively coupled plasma discharged from multiple through holes into the overall cavity be inductively coupled; the mounting seat has an inner cavity, multiple spaced-apart upper openings located at the top and a lower opening located at the bottom; the insulating shell of each plasma source is installed on a corresponding upper opening, and the overall cavity of the insulating shell of each plasma source is connected to the inner cavity of the mounting seat; the lower opening of the mounting seat is used to be connected to the inner space of the process cavity, and the process cavity is used to receive plasma supplied by multiple plasma sources of the plasma source cluster through the mounting seat to perform PECVD deposition coating or to clean the film layer coated in the process cavity and / or the film layer coated on the carrier.

[0010] A PECVD device comprises a process chamber, the process chamber comprises a plurality of plasma source clusters and a process chamber body; the plurality of plasma source clusters are arranged on the same outer surface of the process chamber body at intervals; each plasma source cluster comprises a plurality of plasma sources spaced apart from each other; each plasma source comprises an upper cover, an insulating shell, an insulating dielectric column, a capacitor electrode sheet, and an inductor coil; the upper cover is sealed and fixed on the insulating shell body, the upper cover has an axially through-going air inlet, the air inlet is used to introduce process gas such as deposition coating gas or cleaning gas and is shared by the coating gas and the cleaning gas; the insulating shell body has a hollow cavity; the insulating dielectric column occupies a position of the hollow cavity of the insulating shell body close to the upper cover so that the portion of the hollow cavity of the insulating shell body located away from the upper cover by the insulating dielectric column is an empty and unoccupied integral cavity, and the insulating dielectric column has a plurality of through holes spaced apart from each other and through-going along the axial direction , each through hole is connected to the air inlet and the overall cavity; the capacitor electrode sheet is arranged on the insulating dielectric column so that the capacitor electrode sheet and the insulating dielectric column at each through hole form a capacitor at each through hole, and the capacitor is used to make the process gas entering through the air inlet generate capacitive coupling plasma in the capacitor formed by each through hole, and the capacitive coupling plasma is discharged to the overall cavity; the inductor coil is wound on the outside of the insulating shell and corresponds to the overall cavity of the hollow cavity of the insulating shell in position, and the inductor coil is used to make the capacitive coupling plasma discharged from multiple through holes to the overall cavity perform inductive coupling; the overall cavity of each plasma source is connected to the inner space of the process cavity; the process cavity is used to receive plasma supplied by the plasma source of multiple plasma source clusters to perform PECVD deposition coating or to clean the film layer plated in the process cavity and / or the film layer plated on the carrier.

[0011] The beneficial effects of the present disclosure are as follows.

[0012] In the PECVD device according to the present disclosure, multiple plasma source clusters are arranged on the same outer surface of the process chamber at intervals, and each plasma source cluster includes multiple plasma sources spaced apart from each other, so that the original single large plasma source combined with the process chamber is divided into multiple small plasma source clusters combined with the process chamber, and the original single gas and plasma path at the top of the process chamber is decomposed into multiple plasma paths composed of plasma sources of multiple plasma source clusters (gas is inlet from the air inlet of the plasma sources of multiple plasma source clusters), and multiple small plasma source clusters are arranged above the process chamber, so as to improve the uniformity of the deposition coating and the uniformity of the film cleaning process. The PECVD device according to the present disclosure can meet the coating requirements of solar cell sheets and the cleaning requirements of carrier plates and process chambers, effectively reducing equipment costs and process gas consumption.

[0013] In the PECVD equipment according to the present disclosure, the plasma volume that can only be generated by the existing large plasma source coil is divided into multiple small plasma source clusters. Compared with a single large plasma source, multiple small plasma source clusters or even multiple plasma sources in each plasma source cluster can control the plasma flow rate individually, thereby controlling the coating uniformity and cleaning uniformity of the area in the process chamber, improving the coating reaction rate and cleaning etching rate, and saving process gas. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 is a cross-sectional view of a known PECVD apparatus.

[0015] Figure 2 yes Figure 1 A simplified diagram is provided to illustrate how the process gas is introduced.

[0016] Figure 3 Is adopted Figure 1 Schematic diagram of the effect of traditional PECVD equipment when cleaning the carrier.

[0017] Figure 4 is a perspective view of a plasma source according to the present disclosure.

[0018] Figure 5 yes Figure 4 A partially exploded view of a first embodiment of a plasma source.

[0019] Figure 6 yes Figure 5 A further breakdown of the diagram.

[0020] Figure 7 yes Figure 5 A three-dimensional view of an insulating housing of a plasma source, wherein a lower insulating sheet located in the insulating housing is shown.

[0021] Figure 8 yes Figure 6 Assembly diagram of the insulating dielectric column and capacitor electrode sheet.

[0022] Fig. 9 yes Figure 8 Exploded view of the insulating dielectric column and capacitor electrode sheet in FIG.

[0023] Fig.10 yes Figure 4 A perspective cutaway view of a first embodiment of a plasma source.

[0024] Fig.11 yes Figure 4 A partially exploded view of a second embodiment of a plasma source.

[0025] Fig.12 yes Fig.11 A further breakdown of the diagram.

[0026] Fig.13 yes Fig.12 Exploded view of the insulating dielectric column and capacitor electrode sheet in FIG.

[0027] Fig.14 yes Fig.11 A perspective view of the insulating housing of a plasma source.

[0028] Fig.15 yes Figure 4 A perspective cutaway view of a second embodiment of a plasma source.

[0029] Fig.16 yes Figure 4 Schematic diagram of electrical connection between the RF power supply and the first lead of the capacitor electrode sheet, the first electrode sheet, the second lead, the second electrode sheet and the inductor coil in the first embodiment and the second embodiment of the plasma source.

[0030] Fig.17 is a perspective view of a plasma source cluster according to the present disclosure.

[0031] Fig.18 yes Fig.17 A three-dimensional cutaway diagram of .

[0032] Fig.19 is a perspective view of the PECVD apparatus of the present disclosure.

[0033] Fig. 20 yes Fig.19 Top view of the .

[0034] Fig.21 yes Fig.19 Rear view of.

[0035] Fig. 22 is along Fig.21 A cross-sectional view made along line II.

[0036] Fig.23 yes Fig.19 A three-dimensional cutaway diagram of .

[0037] Fig.24 yes Fig.19 Partial exploded view of the .

[0038] Fig.25 yes Fig.19 An exploded view of some of the structures.

[0039] Fig.26 yes Fig.25 A top perspective view of the air distribution plate.

[0040] Fig. 27 Schematic diagram of different layouts of gas distribution plates.

[0041] Fig.28 is a simplified schematic diagram of a PECVD apparatus of the present disclosure.

[0042] The reference numerals are described as follows:

[0043] M PECVD equipment 200b upper opening

[0044] C process chamber 200c lower opening

[0045] 1000 plasma source cluster 300 shielding cover

[0046] 100 plasma source 2000 process chamber

[0047] D axial 2001 inner space

[0048] 1 Upper cover 2002 cavity

[0049] 11 Intake 2003 cavity cover

[0050] 2Insulation housing A mounting hole

[0051] 21 Hollow cavity 2004 wall

[0052] 211 Overall cavity P through-hole

[0053] 22 Mounting flange 2005 base plate

[0054] 3 Insulation medium column 3000 air distribution components

[0055] 31 through hole 3001 alignment plate

[0056] 4 Capacitor electrode G alignment hole

[0057] 41 first electrode sheet 3002 gas distribution plate

[0058] 411 first perforation R area

[0059] 42 second electrode sheet W gas path

[0060] 421 Second perforated CL hollow column

[0061] 43 First lead V perforation

[0062] 44 Second lead 3003 spacer

[0063] 5 Inductor coil 3004 ring plate

[0064] 6 Upper insulation sheet 3005 insulation gasket

[0065] 61 upper through hole 3006 sealing ring

[0066] 7 Lower insulation sheet T transmission cavity

[0067] 71 lower via E entrance and exit

[0068] 8 Inductor coil frame B carrier board

[0069] 9 RF power supply H telescopic manipulator

[0070] 200 Mounting Base S

[0071] 200a Inner cavity F loading cavity

[0072] D1 Up and down direction DETAILED DESCRIPTION

[0073] The accompanying drawings show embodiments of the present disclosure, and it will be understood that the disclosed embodiments are merely examples of the present disclosure, and the present disclosure can be implemented in various forms. Therefore, the specific details disclosed herein should not be interpreted as limiting, but merely as the basis for the claims and as a representative basis for teaching ordinary technicians in the field to implement the present disclosure in various ways.

[0074] [Plasma source]

[0075] Reference Figures 4 to 16 The plasma source 100 includes an upper cover 1, an insulating shell 2, an insulating medium column 3, a capacitor electrode sheet 4, and an inductor coil 5.

[0076] The upper cover 1 is sealed and fixed on the insulating shell 2. The upper cover 1 has an air inlet 11 that penetrates in the axial direction D. The air inlet 11 is used to introduce process gas such as deposition coating gas or cleaning gas and is shared by the coating gas and the cleaning gas. The insulating shell 2 has a hollow cavity 21. The insulating medium column 3 occupies the position of the hollow cavity 21 of the insulating shell 2 close to the upper cover 1 so that the part of the hollow cavity 21 of the insulating shell 2 located away from the upper cover 1 by the insulating medium column 3 is an empty and unoccupied integral cavity 211. The insulating medium column 3 has a plurality of through holes 31 that are spaced apart from each other in the radial and circumferential directions and penetrate in the axial direction D. Each through hole 31 is connected to the air inlet 11 and the integral cavity 211. The capacitor electrode sheet 4 is arranged on the insulating medium column 3 so that the capacitor electrode sheet 4 and the insulating medium column 3 form a capacitor at each through hole 31, and the capacitor is used to make the process gas entering through the inlet 11 generate a capacitively coupled plasma in the capacitor formed at each through hole 31, and the capacitively coupled plasma is discharged to the overall cavity 211. The inductor coil 5 is wound on the outside of the insulating shell 2 and corresponds to the overall cavity 211 of the hollow cavity 21 of the insulating shell 2 in position, and the inductor coil 5 is used to make the capacitively coupled plasma discharged from the plurality of through holes 31 to the overall cavity 211 be inductively coupled.

[0077] In the plasma source 100 of the present disclosure, the process gas introduced through the air inlet 11 of the upper cover 1 first forms capacitive coupling in each of the multiple through holes 31 of the insulating medium column 3 to form a small amount of capacitively coupled plasma. By utilizing the loose ignition / starting conditions of capacitive coupling (i.e., the ignition pressure range is large, i.e., the ignition pressure requirement is low), the ignition / starting is easily, reliably and stably completed. The capacitively coupled plasmas formed in each of the multiple through holes 31 pass through their respective through holes 31 and enter the overall cavity 211 to form inductive coupling by the action of the inductor 5, which makes the capacitively coupled plasma entering the overall cavity 211 After inductive coupling, the plasma density is enhanced because the advantage of inductive coupling in plasma density is fully utilized. Therefore, the process gas is easily, reliably and stably ignited / started to enhance the plasma density, and the advantages of capacitively coupled plasma (CCP) and inductively coupled plasma (ICP) are fully utilized, so that the quality of the plasma supplied to the process chamber 2000 described later is reliable and stable during the process operation, and the uniformity of the coating / film cleaning is improved in, for example, PECVD deposition coating or cleaning of the film layer coated in the process chamber 200 and / or cleaning of the film layer coated on the carrier B. Therefore, the plasma source 100 of the present disclosure can also be called a hybrid remote plasma source (Hybrid Remote Plasma Source, Hybrid RPS).

[0078] Compared with the capacitor composed of only the upper electrode and the lower electrode in the reaction chamber, in the plasma source 100 of the present disclosure, since capacitors are formed at the plurality of through holes 31 , ignition / starting can be fully ensured, thereby improving the working stability.

[0079] With background technology Figure 1 and Figure 2 In the structure, the PECVD equipment adopts CCP (capacitive coupling) as the plasma generation method for the coating process, and ICP as the plasma source generation method for cleaning. In the plasma source 100 disclosed in the present invention, CCP and ICP are integrated into the same plasma source 100, that is, the plasma source 100 can meet the needs of both the radio frequency power supply and the remote plasma source, and the two are combined into one. Furthermore, because CCP and ICP are integrated into the same plasma source 100, the air inlet 11 can be shared by the coating gas and the cleaning gas, and is used to pass the process gas for depositing the coating gas or the cleaning gas, so that the two-in-one CCP and ICP also achieve two-in-one in the gas path of the process gas.

[0080] The reaction chamber required by a single small plasma source 100 is much smaller than the reaction chamber of an RPS with a single process chamber, thereby avoiding the technical barrier risk and cost increase caused by using a large reaction chamber.

[0081] It is noted that the process gas can be appropriately determined based on the process used (e.g., etching, thin film deposition, process chamber cleaning, or thin film cleaning (for the carrier B described later)). For example, when performing the PECVD deposition coating described later, the deposition coating gas is selected from one or more of SiH4, NH3, TMB, H2, PH3, B2H6, CO2, and N2O; when performing the cleaning of the film layer deposited in the process chamber 2000 described later and / or the cleaning of the film layer deposited on the carrier B, the cleaning gas is selected from one or more of CF3, CHF3, SiCl4, NF3, N2, Ar, He, and Ne.

[0082] like Figures 4 to 6 and Fig.10 as well as Figure 11 to Figure 12 and Fig.15 As shown, in one example, the upper cover 1 is in an inverted funnel shape, which facilitates the process gas to evenly enter each through hole 31. The upper cover 1 is, for example but not limited to, stainless steel, ceramic or quartz.

[0083] like Figures 4 to 7 and Fig.10 as well as Figure 11 to Figure 12 , Fig.14 and Fig.15 As shown, in one example, the insulating housing 2 is a cylinder with mounting flanges 22 at both ends of the axial direction D. Similarly, the insulating housing 2 is made of, for example but not limited to, ceramic.

[0084] The material of the insulating dielectric column 3 can be an inorganic dielectric, and the inorganic dielectric is selected from ceramic, quartz, or glass.

[0085] exist Figures 5 to 10 (and combined with Figure 4 ) in a first embodiment of a plasma source 100, the capacitor electrode sheet 4 includes a cylindrical first electrode sheet 41 and a cylindrical second electrode sheet 42 which are alternately arranged with each other in the radial direction and separated by an insulating medium column 3; a plurality of through holes 31 are arranged in a plurality of concentric circles, and the through holes 31 on each circle are radially located between a corresponding pair of adjacent cylindrical first electrode sheets 41 and second electrode sheets 42 so that the first electrode sheets 41 and the second electrode sheets 42 and the insulating medium column 3 form a tubular capacitor at each through hole 31.

[0086] like Fig.10 As shown, in one example, the size of the first electrode sheet 41 and the second electrode sheet 42 along the axial direction D is the same as the size of the insulating medium column 3 along the axial direction D, thereby making the first electrode sheet 41 and the second electrode sheet 42 and the insulating medium column 3 in the axial direction D form a tubular capacitor at each through hole 31 with the same size, thereby improving the consistency of the capacitors formed at the multiple through holes 31. For example, the insulating medium column 3 can be sintered, so that the first electrode sheet 41 and the second electrode sheet 42 are buried in the insulating medium column 3.

[0087] like Fig. 9 As shown, in one example, first electrode sheets 41 of the same polarity are electrically connected together by a first lead 43, and second electrode sheets 42 of the same polarity are electrically connected together by a second lead 44. Figure 8 In the figure, the first lead 43 extends radially outward from the innermost first electrode sheet 41, and the second lead 44 extends radially outward from the innermost second electrode sheet 42. The radial outward extension direction of the first lead 43 is opposite to the radial outward extension direction of the second lead 44. When the first lead 43 extends radially outward through the second electrode sheet 42, the second electrode sheet 44 is preferably disconnected as a whole along the axial direction D to avoid the first lead 43. Similarly, when the second lead 44 extends radially outward through the first electrode sheet 41, the first electrode sheet 41 is preferably disconnected as a whole along the axial direction D to avoid the second lead 44. Because the overall disconnection of the first electrode sheet 41 along the axial direction D can ensure the consistency of the size of the capacitor formed in the axial direction D, similarly, because the overall disconnection of the second electrode sheet 42 along the axial direction D can ensure the consistency of the size of the capacitor formed in the axial direction D. In addition, the volume is reduced compared to the electrical connection from the end of the axial direction D that is away from the overall cavity 211, which is conducive to the miniaturization of the plasma source 100. Correspondingly, as shown in FIG8 , the plurality of through holes 31 are arranged in multiple concentric circles, and at the disconnection point between the first electrode sheet 41 and the second electrode sheet 42 , the through holes 31 of each circle are separated into two parts, but the parts can be arranged at equal intervals.

[0088] exist Figures 11 to 15 (and combined with Figure 4 ), the capacitor electrode sheet 4 includes a first plate-shaped electrode sheet 41 and a second plate-shaped electrode sheet 42 which are alternately stacked along the axial direction D and separated by the insulating medium column 3, each first electrode sheet 41 has a plurality of first through-holes 411 which are consistent with the positions of the plurality of through-holes 31, and each second electrode sheet 42 has a plurality of second through-holes 421 which are consistent with the positions of the plurality of through-holes 31. The first plate-shaped electrode sheets 41 and the second plate-shaped electrode sheets 42 which are alternately stacked and separated along the axial direction D and the insulating medium column 3 which are located between the adjacent first electrode sheets 41 and the second electrode sheets 42 along the axial direction D form a stacked capacitor, thereby forming a stacked capacitor at each through-hole 31 with the first electrode sheets 41 and the second electrode sheets 42 and the insulating medium column 3.

[0089] Similarly, the insulating medium column 3 can be sintered, and the first electrode sheet 41 and the second electrode sheet 42 are embedded in the insulating medium column 3 .

[0090] like Fig.13 As shown, in one example, the plurality of through holes 31 are arranged in a plurality of concentric circles. Further, the through holes 31 in each circle may be arranged at equal intervals.

[0091] Similarly, the first electrode sheets 41 of the same polarity are electrically connected together by the first lead 43, and the second electrode sheets 42 of the same polarity are electrically connected together by the second lead 44. Since the flat-plate-shaped first electrode sheets 41 and the flat-plate-shaped second electrode sheets 42 are alternately stacked with each other along the axial direction D and separated by the insulating medium column 3, the first electrode sheets 41 of the same polarity can be electrically connected together by the first lead 43 on the same side of the radial direction, and the second electrode sheets 42 of the same polarity can be electrically connected together by the second lead 44 on the same side of the radial direction. Similarly, the first lead 43 and the second lead 44 extend in opposite directions in the radial direction. The first electrode sheet 41, the second electrode sheet 42, and the first lead 43 and the second lead 44 are made of, for example, copper, silver, or copper plated with silver.

[0092] like Figure 4 , Figures 5 and 6 , Figure 11 to Figure 12 As shown, the inductor 5 is in a spirally wound form. The inductor 5 is, for example but not limited to, a copper coil or a copper coil plated with silver.

[0093] like Figure 5 and Fig.11 , Fig.15 as well as Fig.16 As shown, the first lead 43 and the second lead 44 of the capacitor electrode sheet 4 and the inductor 5 are connected in series, thereby allowing the capacitive coupling and the inductive coupling to act simultaneously under the same circuit drive, avoiding the complexity of control caused by the separate circuits of the capacitive coupling and the inductive coupling. In addition, it also avoids the situation where one of the capacitive coupling and the inductive coupling fails due to the separate setting and forms a separate capacitive coupled plasma or a separate inductively coupled plasma. That is, in the plasma source 100 of the present disclosure, the capacitive coupling and the inductive coupling act simultaneously. If the plasma source 100 does not work, it means that the capacitive coupling and the inductive coupling are not working, and any subsequent process operations cannot be performed, leaving it to the operator to check and troubleshoot the fault.

[0094] against Figures 5 to 10 (and combined with Figure 4 ) of the first embodiment of the plasma source 100, such as Figure 5 , Figure 6 and Fig.10As shown, in one example, the plasma source 100 further includes an upper insulating sheet 6, which is covered on one end of the insulating medium column 3 in the axial direction D and adjacent to the upper cover 1; the upper insulating sheet 6 has an upper through hole 61 that passes through and corresponds to the plurality of through holes 31. By setting the upper insulating sheet 6, the process gas entering through the air inlet 11 and the end of the capacitor electrode sheet 4 (specifically the first electrode sheet 41 and the second electrode sheet 42) exposed in the axial direction D of the insulating medium column 3 are covered, thereby isolating the process gas and the end of the capacitor electrode sheet 4 (specifically the first electrode sheet 41 and the second electrode sheet 42) exposed in the axial direction D of the insulating medium column 3. Similarly, as Figure 7 and Fig.10 As shown, in one example, the plasma source 100 further includes a lower insulating sheet 7, which is supported at the other end of the insulating medium column 3 in the axial direction D away from the upper cover 1; the lower insulating sheet 7 has a through lower through hole 71 corresponding to the plurality of through holes 31. By setting the lower insulating sheet 7, the plasma in the overall cavity 211 and the other end of the capacitor electrode sheet 4 (specifically the first electrode sheet 41 and the second electrode sheet 42) exposed in the axial direction D of the insulating medium column 3 are covered, so that the process gas and the other end of the capacitor electrode sheet 4 (specifically the first electrode sheet 41 and the second electrode sheet 42) exposed in the axial direction D of the insulating medium column 3 are separated, so as to avoid the other end of the capacitor electrode sheet 4 (specifically the first electrode sheet 41 and the second electrode sheet 42) exposed in the axial direction D The dielectric column 3 affects the plasma in the overall cavity 211. For example, the upper insulating sheet 6 and the lower insulating sheet 7 are made of the same material as the insulating medium column 3. In one example, the insulating shell 2, the insulating medium column 3, the capacitor electrode sheet 4, the upper insulating sheet 6 and the lower insulating sheet 7 are integrally formed, thereby achieving the fixation of the insulating medium column 3, the capacitor electrode sheet 4, the upper insulating sheet 6 and the lower insulating sheet 7 in the insulating shell 2 and the sealing between the insulating medium column 3, the upper insulating sheet 6 and the lower insulating sheet 7 and the insulating shell 2.

[0095] In targeting Figures 11 to 15 (and combined with Figure 4 ), similarly, in order to separate the process gas entering through the inlet 11 from the capacitor electrode sheet 4 (specifically, the first electrode sheet 41 or the second electrode sheet 42 stacked along the axial direction D and closest to the inlet 11) and to separate the plasma in the overall cavity 211 from the capacitor electrode sheet 4 (specifically, the first electrode sheet 41 or the second electrode sheet 42 stacked along the axial direction D and closest to the overall cavity 211), the insulating medium column 3 covers the capacitor electrode sheet 4 at both ends of the axial direction D, as shown in FIG. Fig.11 , Fig.12 , Fig.13 and Fig.15In one example, the insulating housing 2, the insulating medium column 3, and the capacitor electrode sheet 4 are integrally formed, thereby achieving the fixation of the insulating medium column 3 and the capacitor electrode sheet 4 in the insulating housing 2 and the sealing between the insulating medium column 3 and the insulating housing 2.

[0096] like Figure 4 , Figure 5 , Figure 6 , Fig.10 as well as Fig.11 , Fig.12 , Fig.15 As shown, in one example, the plasma source 100 further includes an inductor frame 8; the inductor frame 8 is sleeved outside the insulating housing 2 and covers at least a portion of the insulating medium column 3 and the entire cavity 211 along the axial direction D, and the inductor frame 8 is used to fix and support the inductor 5. The material of the inductor frame 8 can be Teflon.

[0097] like Fig.16 As shown, the plasma source 100 further includes a radio frequency power supply 9, which is connected in series with the first lead 43 and the second lead 44 of the capacitor electrode sheet 4 and the inductor 5, and both ends of the radio frequency power supply 9 are grounded. Fig.16 In the example shown, there is one radio frequency power source 9. In an example not shown, there are two radio frequency power sources 9, which are respectively located on opposite sides of the capacitor electrode sheet 4 and the inductor coil 5 connected in series.

[0098] [Ion source cluster]

[0099] Reference Fig.17 and Fig.18 According to the present disclosure, the plasma source cluster 1000 comprises a plurality of plasma sources 100 spaced apart from each other and a mounting seat 200 as described above. The mounting seat 200 has an inner cavity 200a, a plurality of spaced apart upper openings 200b at the top, and a lower opening 200c at the bottom; the insulating shell 2 of each plasma source 100 is mounted on a corresponding upper opening 200b, and the integral cavity 211 of the insulating shell 2 of each plasma source 100 is connected to the inner cavity 200b of the mounting seat 200; the lower opening 200c of the mounting seat 200 is used to be connected to the inner space 2001 of the process chamber 2000, and the process chamber 2000 of the PECVD device M described later is used to receive plasma supplied by the plurality of plasma sources 100 of the plasma source cluster 1000 via the mounting seat 200 to perform PECVD deposition coating or to clean the film layer coated in the process chamber 2000 and / or the film layer coated on the carrier B.

[0100] The various features, effects, and operations of the plasma source 100 can be found in the foregoing description and will not be described again herein.

[0101] The plasma source cluster 1000 according to the present disclosure is used as a basic unit of the PECVD device M described later, so that the plasma supplied to the corresponding region R described later through the plasma source cluster 1000 is more uniform at each position in the corresponding region R.

[0102] exist Fig.17 and Fig.18 In the embodiment, the plasma sources 100 of the plasma source cluster 1000 are arranged by arranging one plasma source 100 in the center and arranging four plasma sources 100 at equal intervals radially and axially around the plasma source 100 in the center. In an alternative example, the plasma sources 100 in the plasma source cluster 1000 are arranged in an array, and the specific arrangement can be flexibly set as long as uniform distribution is achieved (and thus the plasma supplied to the corresponding region R described later is more uniform at each position in the corresponding region R).

[0103] Reference Fig.18 The insulating shell 2 of the plasma source 100 is detachably mounted on a corresponding upper opening 200b.

[0104] like Fig.17 and Fig.18 As shown, in one example, each plasma source cluster 1000 further includes a shielding cover 300 ; the shielding cover 300 surrounds the plurality of plasma sources 100 and separates the plurality of plasma sources 100 from each other.

[0105] [PECVD equipment]

[0106] Reference Figures 19 to 28 Combined with Figures 4 to 18 According to the PECVD equipment M of the present disclosure, the process chamber C includes the aforementioned multiple plasma source clusters 1000 and a process chamber 2000, and the multiple plasma source clusters 1000 are arranged on the same outer surface of the process chamber 2000 at intervals. Each plasma source cluster 1000 includes multiple plasma sources 100 spaced apart from each other. The overall cavity 211 of each plasma source 100 is connected to the inner space 2001 of the process chamber 2000; the process chamber 2000 is used to receive plasma supplied by the plasma sources 100 of the multiple plasma source clusters 1000 to perform PECVD deposition coating or to clean the film layer coated in the process chamber 2000 and / or the film layer coated on the carrier B. The various features, effects, and operations of the plasma source 100 can be referred to above, and will not be repeated here.

[0107] It should be noted here that the mounting seat 200 of each plasma source cluster 1000 in the PECVD device M of the present invention may be used or not, that is, each plasma source 100 in each plasma source cluster 1000 may be directly installed in the process chamber 2000, and multiple plasma sources 100 in each plasma source cluster 1000 may also be indirectly installed in the process chamber 2000 through the mounting seat 200.

[0108] In the PECVD device M according to the present disclosure, multiple plasma source clusters 1000 are arranged on the same outer surface of the process chamber 2000 at intervals, and each plasma source cluster 1000 includes multiple plasma sources 100 spaced apart from each other, so that the original single large plasma source combined with the process chamber is divided into multiple small plasma source clusters 1000 combined with the process chamber 2000, and the original single gas and plasma path at the top of the process chamber is decomposed into multiple plasma paths composed of plasma sources 100 of multiple plasma source clusters 1000 (gas is inlet from the air inlet 11 of the plasma source 10 of the multiple plasma source clusters 1000), and multiple small plasma source clusters 1000 are arranged above the process chamber, so as to improve the uniformity of the deposition coating and the uniformity of the film cleaning process. The PECVD device M according to the present disclosure can meet the coating requirements of solar cell sheets, and can also meet the cleaning requirements of the carrier B and the process chamber 200, effectively reducing the equipment cost and the gas consumption of the process.

[0109] In the PECVD device M according to the present disclosure, the plasma volume that can only be generated by the existing large plasma source coil is divided into multiple small plasma source clusters 1000. Compared with a single large plasma source, multiple small plasma source clusters 1000 or even multiple plasma sources 100 in each plasma source cluster 1000 can control the plasma flow rate individually, thereby controlling the coating uniformity and cleaning uniformity of the later described area R in the process chamber 200, improving the coating reaction rate and cleaning etching rate, and saving process gas.

[0110] In the PECVD device M according to the present disclosure, the original large plasma source is divided into a plurality of small plasma source clusters 1000. If any small plasma source cluster 1000 is damaged, it can be very conveniently disassembled and replaced without removing all the plasma source clusters 1000 on the entire process chamber 2000 for repair. The same applies to the plasma sources 100 in each plasma source cluster 1000.

[0111] In addition, the power of the RF power supply 9 required by a single small plasma source 100 is relatively small, which can avoid the technical barrier risks and cost increase caused by using a high-power RF power supply.

[0112] The reaction chamber required by a single small plasma source 100 is much smaller than the reaction chamber of an RPS with a single process chamber, thereby avoiding the technical barrier risk and cost increase caused by using a large reaction chamber.

[0113] like Figures 19 to 25 As shown, the same outer surface is the top surface.

[0114] Reference Figures 19 to 25 Combined with Fig.26 and Fig. 27 In the left figure of FIG. 1 , the plurality of plasma source clusters 1000 are arranged with one plasma source cluster 1000 arranged at the center and four plasma source clusters 1000 arranged at equal intervals radially and axially around the central plasma source cluster 1000. Figures 19 to 25 Combined with Fig.26 and Fig. 27 In the example of the left figure, the areas of the five regions R should be equal or the area of ​​the central region should be slightly larger than the area of ​​the surrounding regions. In an alternative example, multiple plasma source clusters 1000 are arranged in an array (refer to Fig. 27 The 3×3 array in the middle figure and the 2×2 in the right figure D), the area of ​​each region R is as equal as possible, and the specific arrangement can be flexibly set as long as it is evenly distributed (and thus the supply to each position in the inner space 2001 of the entire process chamber 2000 is more uniform, and ultimately the uniformity of the overall deposition coating / film cleaning is improved).

[0115] In addition, for a plurality of plasma source clusters 1000 , different process parameters can be set for plasma source clusters 1000 in different regions R, thereby improving process flexibility.

[0116] like Figures 19 to 24 As shown, in one example, the process chamber 2000 includes a chamber 2002 and a chamber cover 2003. The chamber 2002 includes a surrounding wall 2004 and a bottom plate 2005. The surrounding wall 2002 is formed in a ring shape, is open on both sides of the up-down direction D1, and forms a through opening P in a direction transverse to the up-down direction D1. The surrounding wall 2004 forms the inner space 2001. The chamber cover 2003 is installed on the top side of the surrounding wall 2004 to close the top side of the surrounding wall 2004. The chamber cover 2003 is formed with a plurality of mounting holes A, each mounting hole A is used to install the mounting seat 200 of each plasma source cluster 1000; the bottom plate 2005 is integrated with the surrounding wall 2004 to close the bottom side of the surrounding wall 2004. Fig.24 The multiple holes of the bottom plate 2005 shown in the figure are used to accommodate a heating plate (not shown) driven by a lifting rod (not shown) to heat the carrier plate B.

[0117] In addition, refer to Figure 22 to Figure 27The process chamber C further includes a gas distribution assembly 3000. The gas distribution assembly 3000 is used to separate the multiple plasma source clusters 1000 from each other so as to separate the plasma supplied by the multiple plasma source clusters 1000 from each other before entering the inner space 2001 of the process chamber 2000. Thus, the reaction precursors of different plasma source clusters 1000 can be effectively prevented from affecting each other before contacting the substrate S.

[0118] Specifically, Fig.25 and Fig.26 As shown, in one example, the gas distribution assembly 3000 includes an alignment plate 3001, a gas distribution plate 3002, and a spacer bar 3003. The alignment plate 3001 is provided with a plurality of alignment holes G, each alignment hole G being used to align with the lower opening 200c of the mounting seat 200 of each plasma source cluster 1000. The gas distribution plate 3002 is evenly distributed into a plurality of regions R, each region R is provided with a plurality of evenly distributed gas paths W that penetrate along the up-down direction D1, and the gas paths W of each region R are connected to the corresponding alignment holes G and the inner space 2001 of the process chamber 2000. The spacer bar 3003 is arranged between the alignment plate 3001 and the gas distribution plate 3002 to separate the plurality of alignment holes G of the alignment plate 3001 and the plurality of alignment holes G of the gas distribution plate 3002.

[0119] like Fig.25 and Fig.26 Shown and combined Fig.23 In one example, the gas path W of each region R is composed of a hollow column CL located on the upper side of the spacer bar 3003 and a through hole V penetrating the spacer bar 3003 .

[0120] like Figure 23 to Figure 25 As shown, in one example, the gas distribution assembly 3000 further includes a ring plate 3004. The ring plate 3004 surrounds the alignment plate 3001 and the gas distribution plate 3002 and is connected to the process chamber 2000.

[0121] In addition, if Fig. 22 and Fig.23 As shown, the gas distribution assembly 3000 also includes a plurality of insulating washers 3005 and a plurality of sealing rings 3006. Each insulating washer 3005 is installed between the alignment plate 3001 and the mounting seat 200 of each plasma source cluster 1000, and each insulating washer 3005 is connected to the corresponding alignment hole G and the lower opening 200c of the mounting seat 200 of each plasma source cluster 1000. A sealing ring 3006 is provided between each insulating washer 3005 and the mounting seat 200 of each plasma source cluster 1000, and between each insulating washer 3005 and the alignment plate 3001. The material of the insulating washer 3005 is, for example, but not limited to, ceramic or plastic. The material of the sealing ring 3006 is, for example, but not limited to, perfluororubber, high fluororubber or plastic.

[0122] like Fig.28As shown, in one example, the PECVD device M further includes a transfer chamber T, a carrier B, and a telescopic robot H. The transfer chamber T is located outside the process chamber C, and the transfer chamber T is adjacent to and connected to the process chamber body 2000 of the process chamber C. The transfer chamber T is used to transfer the carrier B. The carrier B is used to carry the substrate S to be PECVD coated. The telescopic robot H is arranged in the transmission chamber T. The telescopic robot H is used for: during the deposition coating, the telescopic robot H holds the carrier B carrying the substrate S to be PECVD coated and transmitted through the transmission chamber T, and transports the carrier B carrying the substrate S to be PECVD coated through the entrance E connected to the through-port P of the transmission chamber T and the process chamber 2000 to the inner space 2001 of the process chamber 2000 through the entrance E connected to the through-port P of the transmission chamber T and the process chamber 2000, and after the substrate S is PECVD coated in the inner space 2001 of the process chamber 2000, the carrier B carrying the substrate S which has been PECVD coated is transported from the process chamber 2000 through the transmission chamber T and the process chamber 2000 through the entrance E connected to the through-port P of the transmission chamber T and the process chamber 2000 through the telescopic. The carrier B is transported to the transfer chamber T through the entrance and exit E connected to the through-port P of the process chamber 2000; when the film layer plated on the carrier B is cleaned, the telescopic robot H holds the carrier B without the substrate S that is transferred through the transfer chamber T and transports the carrier B to the inner space 2001 of the process chamber 2000 through the entrance and exit E connected to the through-port P of the process chamber 2000 through telescoping; and after the carrier B completes the cleaning of the plated film layer in the inner space 2001 of the process chamber 2000, the carrier B is transported from the process chamber 2000 through the entrance and exit E connected to the through-port P of the process chamber 2000 through telescoping.

[0123] Furthermore, if Fig.28 As shown, the PECVD equipment M also includes a loading chamber F; the loading chamber F is used to send a carrier plate B carrying a substrate S to be PECVD coated into the telescopic robot H of the transmission chamber T.

[0124] The above detailed description is used to describe multiple exemplary embodiments, but this document is not intended to be limited to the explicitly disclosed combinations. Therefore, unless otherwise stated, the various features disclosed herein can be combined together to form multiple additional combinations that are not shown for the sake of simplicity.

Claims

1. A plasma source cluster, characterized in that The plasma source cluster (1000) comprises a plurality of plasma sources (100) spaced apart from each other and a mounting seat (200); Each plasma source (100) comprises an upper cover (1), an insulating shell (2), an insulating medium column (3), a capacitor electrode sheet (4), and an inductor coil (5); The upper cover (1) is sealed and fixed on the insulating housing (2), and the upper cover (1) has an air inlet (11) which penetrates in the axial direction (D). The air inlet (11) is used to introduce process gas such as deposition coating gas or cleaning gas and is shared by the deposition gas and the cleaning gas. The insulating housing (2) has a hollow cavity (21); The insulating medium column (3) occupies a position of the hollow cavity (21) of the insulating housing (2) close to the upper cover (1) so that a portion of the hollow cavity (21) of the insulating housing (2) located away from the upper cover (1) by the insulating medium column (3) is an empty and unoccupied overall cavity (211), and the insulating medium column (3) has a plurality of through holes (31) spaced apart from each other and extending through the axial direction (D), and each through hole (31) is connected to the air inlet (11) and the overall cavity (211); The capacitor electrode sheet (4) is arranged on the insulating medium column (3) so that the capacitor electrode sheet (4) and the insulating medium column (3) at each through hole (31) together form a capacitor at each through hole (31), and the capacitor is used to enable the process gas entering through the air inlet (11) to generate a capacitively coupled plasma in the capacitor formed by each through hole (31), and the capacitively coupled plasma is discharged to the overall cavity (211); The inductor coil (5) is wound around the outside of the insulating shell (2) and corresponds in position to the overall cavity (211) of the hollow cavity (21) of the insulating shell (2), and the inductor coil (5) is used to perform inductive coupling on the capacitively coupled plasma discharged from the plurality of through holes (31) into the overall cavity (211); The mounting base (200) has an inner cavity (200a), a plurality of spaced-apart upper openings (200b) at the top, and a lower opening (200c) at the bottom; The insulating shell (2) of each plasma source (100) is installed on a corresponding upper opening (200b), and the integral cavity (211) of the insulating shell (2) of each plasma source (100) is connected to the inner cavity (200b) of the mounting seat (200); The lower opening (200c) of the mounting seat (200) is used to communicate with the inner space (2001) of the process chamber (2000), and the process chamber (2000) is used to receive plasma supplied by multiple plasma sources (100) of the plasma source cluster (1000) via the mounting seat (200) to perform PECVD deposition coating or to clean the film layer coated in the process chamber (2000) and / or clean the film layer coated on the carrier (B).

2. The plasma source cluster according to claim 1, characterized in that: The capacitor electrode sheet (4) comprises a first cylindrical electrode sheet (41) and a second cylindrical electrode sheet (42) which are alternately sleeved with each other in the radial direction and separated by an insulating medium column (3); A plurality of through holes (31) are arranged in a plurality of concentric circles, and the through holes (31) on each circle are radially located between a corresponding pair of adjacent cylindrical first electrode sheets (41) and second electrode sheets (42), so that the first electrode sheets (41) and the second electrode sheets (42) and the insulating medium column (3) form a tubular capacitor at each through hole (31).

3. The plasma source cluster according to claim 1, characterized in that: The capacitor electrode sheets (4) include first electrode sheets (41) and second electrode sheets (42) in the form of a plate, which are alternately stacked along an axial direction (D) and separated by an insulating medium column (3); each first electrode sheet (41) has a plurality of first through holes (411) that are aligned with the positions of the plurality of through holes (31); each second electrode sheet (42) has a plurality of second through holes (421) that are aligned with the positions of the plurality of through holes (31); The first flat electrode sheets (41) and the second flat electrode sheets (42) which are alternately stacked and spaced apart from each other along the axial direction (D) and the insulating dielectric column (3) located between the adjacent first electrode sheets (41) and second electrode sheets (42) along the axial direction (D) form a stacked capacitor, thereby forming a stacked capacitor at each through hole (31) of the first electrode sheets (41) and the second electrode sheets (42) and the insulating dielectric column (3).

4. The plasma source cluster according to claim 2 or 3, characterized in that: The first electrode sheets (41) of the same polarity are electrically connected together by a first lead wire (43), and the second electrode sheets (42) of the same polarity are electrically connected together by a second lead wire (44).

5. The plasma source cluster according to claim 4, characterized in that: The first lead (43) and the second lead (44) of the capacitor electrode sheet (4) and the inductor coil (5) are connected in series.

6. The plasma source cluster according to claim 2, characterized in that: The plasma source (100) further comprises an upper insulating sheet (6), The upper insulating sheet (6) is covered on an end of the insulating medium column (3) adjacent to the upper cover (1) in the axial direction (D); The upper insulating sheet (6) has upper through holes (61) that penetrate the plurality of through holes (31); The plasma source (100) further comprises a lower insulating sheet (7), The lower insulating sheet (7) is supported on the other end of the insulating medium column (3) in the axial direction (D) and away from the upper cover (1); The lower insulating sheet (7) has through-going lower via holes (71) corresponding to the plurality of through holes (31).

7. The plasma source cluster according to claim 1, characterized in that: The plasma source (100) further comprises an inductor coil frame (8); The inductor coil frame (8) is sleeved outside the insulating shell (2) and covers at least a portion of the insulating medium column (3) and the entire integral cavity (211) along the axial direction (D). The inductor coil frame (8) is used to fix and support the inductor coil (5).

8. The plasma source cluster according to claim 5, characterized in that: The plasma source (100) further comprises a radio frequency power supply (9), The radio frequency power source (9) is connected in series with the first lead wire (43) and the second lead wire (44) of the capacitor electrode sheet (4) and the inductor coil (5), and both ends are grounded.

9. The plasma source cluster according to claim 1, characterized in that: A plurality of plasma sources (100) are arranged in an array.

10. The plasma source cluster according to claim 1, characterized in that: The plasma source cluster (1000) further comprises a shielding cover (300); The shield (300) surrounds the plurality of plasma sources (100) and separates the plurality of plasma sources (100) from each other.

11. A PECVD device, comprising a process chamber (C), characterized in that: The process chamber (C) comprises a plurality of plasma source clusters (1000) and a process chamber body (2000); A plurality of plasma source clusters (1000) are arranged on the same outer surface of a process chamber (2000) at intervals from each other; Each plasma source cluster (1000) includes a plurality of plasma sources (100) spaced apart from each other; Each plasma source (100) comprises an upper cover (1), an insulating shell (2), an insulating medium column (3), a capacitor electrode sheet (4), and an inductor coil (5); The upper cover (1) is sealed and fixed on the insulating housing (2), and the upper cover (1) has an air inlet (11) which penetrates in the axial direction (D). The air inlet (11) is used to introduce process gas such as deposition coating gas or cleaning gas and is shared by the deposition gas and the cleaning gas. The insulating housing (2) has a hollow cavity (21); The insulating medium column (3) occupies a position of the hollow cavity (21) of the insulating housing (2) close to the upper cover (1) so that a portion of the hollow cavity (21) of the insulating housing (2) located away from the upper cover (1) by the insulating medium column (3) is an empty and unoccupied overall cavity (211), and the insulating medium column (3) has a plurality of through holes (31) spaced apart from each other and extending through the axial direction (D), and each through hole (31) is connected to the air inlet (11) and the overall cavity (211); The capacitor electrode sheet (4) is arranged on the insulating medium column (3) so that the capacitor electrode sheet (4) and the insulating medium column (3) at each through hole (31) together form a capacitor at each through hole (31), and the capacitor is used to enable the process gas entering through the air inlet (11) to generate a capacitively coupled plasma in the capacitor formed by each through hole (31), and the capacitively coupled plasma is discharged to the overall cavity (211); The inductor coil (5) is wound around the outside of the insulating shell (2) and corresponds in position to the overall cavity (211) of the hollow cavity (21) of the insulating shell (2), and the inductor coil (5) is used to perform inductive coupling on the capacitively coupled plasma discharged from the plurality of through holes (31) into the overall cavity (211); The overall cavity (211) of each plasma source (100) is connected to the inner space (2001) of the process cavity (2000); The process chamber (2000) is used to receive plasma supplied by the plasma sources (100) of the plurality of plasma source clusters (1000) to perform PECVD deposition coating or to clean the film layer coated in the process chamber (2000) and / or clean the film layer coated on the carrier (B).

12. The PECVD device according to claim 11, characterized in that The capacitor electrode sheet (4) comprises a first cylindrical electrode sheet (41) and a second cylindrical electrode sheet (42) which are alternately sleeved with each other in the radial direction and separated by an insulating medium column (3); A plurality of through holes (31) are arranged in a plurality of concentric circles, and the through holes (31) on each circle are radially located between a corresponding pair of adjacent cylindrical first electrode sheets (41) and second electrode sheets (42), so that the first electrode sheets (41) and the second electrode sheets (42) and the insulating medium column (3) form a tubular capacitor at each through hole (31).

13. The PECVD device according to claim 11, characterized in that The capacitor electrode sheets (4) include first electrode sheets (41) and second electrode sheets (42) in the form of a plate, which are alternately stacked along an axial direction (D) and separated by an insulating medium column (3); each first electrode sheet (41) has a plurality of first through holes (411) that are aligned with the positions of the plurality of through holes (31); each second electrode sheet (42) has a plurality of second through holes (421) that are aligned with the positions of the plurality of through holes (31); The first flat electrode sheets (41) and the second flat electrode sheets (42) which are alternately stacked and spaced apart from each other along the axial direction (D) and the insulating dielectric column (3) located between the adjacent first electrode sheets (41) and second electrode sheets (42) along the axial direction (D) form a stacked capacitor, thereby forming a stacked capacitor at each through hole (31) of the first electrode sheets (41) and the second electrode sheets (42) and the insulating dielectric column (3).

14. The PECVD device according to claim 12 or 13, characterized in that: The first electrode sheets (41) of the same polarity are electrically connected together by a first lead wire (43), and the second electrode sheets (42) of the same polarity are electrically connected together by a second lead wire (44).

15. The PECVD device according to claim 14, characterized in that The first lead (43) and the second lead (44) of the capacitor electrode sheet (4) and the inductor coil (5) are connected in series.

16. The PECVD device according to claim 12, characterized in that: The plasma source (100) further comprises an upper insulating sheet (6), The upper insulating sheet (6) is covered on an end of the insulating medium column (3) adjacent to the upper cover (1) in the axial direction (D); The upper insulating sheet (6) has upper through holes (61) that penetrate the plurality of through holes (31); The plasma source (100) further comprises a lower insulating sheet (7), The lower insulating sheet (7) is supported on the other end of the insulating medium column (3) in the axial direction (D) and away from the upper cover (1); The lower insulating sheet (7) has through-going lower via holes (71) corresponding to the plurality of through holes (31).

17. The PECVD device according to claim 11, characterized in that The plasma source (100) further comprises an inductor coil frame (8); The inductor coil frame (8) is sleeved outside the insulating shell (2) and covers at least a portion of the insulating medium column (3) and the entire integral cavity (211) along the axial direction (D). The inductor coil frame (8) is used to fix and support the inductor coil (5).

18. The PECVD device according to claim 15, characterized in that The plasma source (100) further comprises a radio frequency power supply (9), The radio frequency power source (9) is connected in series with the first lead wire (43) and the second lead wire (44) of the capacitor electrode sheet (4) and the inductor coil (5), and both ends are grounded.

19. The PECVD device according to claim 11, characterized in that The plurality of plasma sources (100) in each plasma source cluster (C) are arranged in an array.

20. The PECVD device according to claim 11, characterized in that Each plasma source cluster (1000) further comprises a mounting base (200), wherein the mounting base (200) has an inner cavity (200a), a plurality of spaced-apart upper openings (200b) at the top, and a lower opening (200c) at the bottom; The insulating shell (2) of each plasma source (100) is installed on a corresponding upper opening (200b), and the integral cavity (211) of the insulating shell (2) of each plasma source (100) is connected to the inner cavity (200b) of the mounting seat (200). The lower opening (200c) of the mounting seat (200) is connected to the inner space (2001) of the process chamber (2000).

21. The PECVD device according to claim 11, characterized in that Each plasma source cluster (1000) further comprises a shielding cover (300); The shield (300) surrounds the plurality of plasma sources (100) and separates the plurality of plasma sources (100) from each other.

22. The PECVD device according to claim 11, characterized in that The process chamber (C) also includes a gas distribution component (3000); The gas distribution assembly (3000) is used to space the multiple plasma source clusters (1000) apart from each other so as to space the multiple plasma source clusters (1000) apart from each other before the plasma supplied by the multiple plasma source clusters (1000) enters the inner space (2001) of the process chamber (2000).

23. The PECVD device according to claim 22, characterized in that The air distribution assembly (3000) comprises an alignment plate (3001), an air distribution plate (3002) and a spacer strip (3003); The alignment plate (3001) is provided with a plurality of alignment holes (G), each alignment hole (G) being used for alignment with a lower opening (200c) of a mounting seat (200) of each plasma source cluster (1000); The gas distribution plate (3002) is evenly distributed into a plurality of regions (R), each region (R) is provided with a plurality of evenly distributed gas paths (W) that are connected in the up-down direction (D1), and the gas paths (W) of each region (R) are connected to the corresponding alignment holes (G) and the inner space (2001) of the process chamber (2000); The spacer bar (3003) is disposed between the alignment plate (3001) and the gas distribution plate (3002) to separate the multiple alignment holes (G) of the alignment plate (3001) and to separate the multiple alignment holes (G) of the gas distribution plate (3002).

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