Conductive glass and production process

Abstract

The invention provides conductive glass. The conductive glass comprises a glass substrate, an indium tin oxide layer, a metal grid layer, a zinc oxide layer and a zinc oxide nano layer. The indium tin oxide layer is arranged on one side of the glass substrate. The metal grid layer is arranged between the glass substrate and the indium tin oxide layer. The zinc oxide layer is arranged between the glass substrate and the metal grid layer. The zinc oxide nano layer is arranged between the zinc oxide layer and the indium tin oxide layer and penetrates through the metal grid layer. The invention also provides a conductive glass production process. The conductive glass production process comprises the following steps: preparing the glass substrate; preparing the zinc oxide layer; preparing the metal grid layer; preparing the zinc oxide nano layer; and preparing the indium tin oxide layer. Compared with the prior art, the conductive glass provided by the invention only adopts the indium tin oxide layer to conduct electricity, increases the conductive path, further reduces the resistance, is beneficial to further improving the conductivity of the conductive glass, and reduces the influence of thermal stress and mechanical stress of the glass substrate on the indium tin oxide layer.

Description

Technical Field

[0001] The present application relates to the field of special glass, and in particular to a conductive glass and a production process. Background Art

[0002] Conductive glass is a special glass material with conductive properties, which is usually used in situations where transparency and conductivity are required. Conductive glass is usually composed of a transparent glass substrate and a transparent conductive film; wherein the transparent conductive film is usually set as an indium tin oxide (ITO) conductive film. In the related art, when the indium tin oxide conductive film is used as the transparent conductive film, the conductive path is relatively simple and the conductive performance is poor. Summary of the invention

[0003] The purpose of the embodiments of the present application is to provide a conductive glass and a production process to solve the technical problem of poor conductive performance existing in the prior art.

[0004] To achieve the above purpose, the technical solution adopted in this application is: to provide a conductive glass, including:

[0005] Glass substrate;

[0006] An indium tin oxide layer, wherein the indium tin oxide layer is disposed on one side of the glass substrate;

[0007] A metal mesh layer, wherein the metal mesh layer is disposed between the glass substrate and the indium tin oxide layer;

[0008] A zinc oxide layer, wherein the zinc oxide layer is disposed between the glass substrate and the metal grid layer;

[0009] The zinc oxide nanolayer is disposed between the zinc oxide layer and the indium tin oxide layer and penetrates the metal grid layer.

[0010] Optionally, the zinc oxide nanolayer includes a plurality of zinc oxide nanowires, and the plurality of zinc oxide nanowires are all connected between the zinc oxide conductive layer and the indium tin oxide layer, and are passed through meshes of the metal grid layer.

[0011] Optionally, the conductive glass further comprises an anti-reflection layer, and the anti-reflection layer is arranged on a side of the glass substrate facing away from the zinc oxide layer.

[0012] The present application also provides a conductive glass production process, which comprises at least the following steps:

[0013] preparing the glass substrate;

[0014] preparing the zinc oxide layer;

[0015] preparing the metal mesh layer;

[0016] preparing the zinc oxide nanolayer;

[0017] The indium tin oxide layer is prepared.

[0018] Optionally, the step of preparing the zinc oxide nanolayer includes at least the following steps:

[0019] preparing a mixed solution, using zinc nitrate hexahydrate, hexamethylenetetramine and polyethyleneimine to prepare the mixed solution;

[0020] The zinc oxide nanowires are grown in a water bath, and the glass substrate prepared with the zinc oxide layer and the metal grid layer and a mixed solution are placed in a constant temperature water bath device.

[0021] Optionally, in the step of growing zinc oxide nanowires in a water bath, the water bath temperature is 95°C.

[0022] Optionally, in the step of growing zinc oxide nanowires in a water bath, the water bath time is 9 hours.

[0023] Optionally, in the step of growing zinc oxide nanowires in a water bath, the concentration of polyethyleneimine is 4.5 mmol / L.

[0024] Optionally, the step of depositing the zinc oxide nanolayer includes at least the following steps:

[0025] Cleaning, taking out the glass substrate prepared with the zinc oxide layer, the metal grid layer and the zinc oxide nanolayer from the constant temperature water bath equipment, washing, air-drying and baking in sequence.

[0026] Optionally, the step of preparing the glass substrate includes at least the following steps:

[0027] Cleaning: ultrasonically cleaning the glass substrate in acetone, ethanol and distilled water in sequence;

[0028] Blow dry with nitrogen.

[0029] The conductive glass provided in this application has the following beneficial effects:

[0030] The conductive glass provided by the present application adopts a metal grid layer, which can increase the conductive path compared to the related art that only uses an indium tin oxide layer for conduction. In addition, the metal grid layer and the indium tin oxide layer form a composite conductive structure, which can reduce resistance and improve the conductive performance of the conductive glass. The zinc oxide layer can form a composite conductive structure with the metal grid layer and the indium tin oxide layer, which can further reduce resistance and help to further improve the conductive performance of the conductive glass. In addition, the zinc oxide layer facilitates the growth of zinc oxide nanowires, which helps to improve the bonding between the zinc oxide nanolayer and the glass substrate compared to the zinc oxide nanolayer directly arranged on the surface of the glass substrate. In addition, the zinc oxide layer can reduce the influence of thermal stress and mechanical stress of the indium tin oxide layer on the glass substrate. The zinc oxide nanolayer can increase the conductive path compared to the related art that only uses an indium tin oxide layer for conduction. In addition, the zinc oxide nanolayer can form a composite conductive structure with the metal grid layer and the zinc oxide layer, which can further reduce resistance and help to further improve the conductive performance of the conductive glass. In addition, the zinc oxide nanolayer helps to improve the bonding between the indium tin oxide layer and the glass substrate, and the structure is stable. In addition, the zinc oxide nanolayer can also reduce the impact of thermal and mechanical stress on the indium tin oxide layer caused by the glass substrate.

[0031] The beneficial effects of the production process of conductive glass provided in this application are:

[0032] The production process of the conductive glass provided in the present application adopts the above steps to prepare the zinc oxide layer, the metal grid layer and the zinc oxide nanolayer between the glass substrate and the indium tin oxide layer, which helps to improve the conductive properties of the conductive glass. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative labor.

[0034] Figure 1 A cross-sectional view of the conductive glass provided in an embodiment of the present application;

[0035] Figure 2 A flow chart of a conductive glass production process provided in an embodiment of the present application;

[0036] Figure 3 The first line graph of the conductive glass production process provided in the embodiment of the present application (the relationship between the concentration of polyethyleneimine and the diameter and length of zinc oxide nanowires);

[0037] Figure 4The second line graph of the conductive glass production process provided in the embodiment of the present application (the relationship between the polyethyleneimine concentration and the aspect ratio of the zinc oxide nanowires).

[0038] Among them, the reference numerals in the figure are:

[0039] 1. Glass substrate;

[0040] 2. Indium tin oxide layer;

[0041] 3. Metal mesh layer;

[0042] 4. Zinc oxide layer;

[0043] 5. Zinc oxide nanolayer;

[0044] 6. Transmittance-enhancing layer. DETAILED DESCRIPTION

[0045] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present application more clearly understood, the present application is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0046] It should be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it can be directly on the other element or indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or indirectly connected to the other element.

[0047] It should be understood that the terms "length", "width", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0048] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of this application, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0049] like Figure 1As shown, the present application provides a conductive glass, including a glass substrate, an indium tin oxide layer, a metal grid layer, a zinc oxide layer and a zinc oxide nanolayer. The indium tin oxide layer is arranged on one side of the glass substrate. The metal grid layer is arranged between the glass substrate and the indium tin oxide layer. The zinc oxide layer is arranged between the glass substrate and the metal grid layer. The zinc oxide nanolayer is arranged between the zinc oxide layer and the indium tin oxide layer, and penetrates the metal grid layer.

[0050] The conductive glass provided by the present application adopts a metal grid layer, which can increase the conductive path compared to the related art that only uses an indium tin oxide layer for conduction. In addition, the metal grid layer and the indium tin oxide layer form a composite conductive structure, which can reduce resistance and improve the conductive performance of the conductive glass. The zinc oxide layer can form a composite conductive structure with the metal grid layer and the indium tin oxide layer, which can further reduce resistance and help to further improve the conductive performance of the conductive glass. In addition, the zinc oxide layer facilitates the growth of zinc oxide nanowires, which helps to improve the bonding between the zinc oxide nanolayer and the glass substrate compared to the zinc oxide nanolayer directly arranged on the surface of the glass substrate. In addition, the zinc oxide layer can reduce the influence of thermal stress and mechanical stress of the indium tin oxide layer on the glass substrate. The zinc oxide nanolayer can increase the conductive path compared to the related art that only uses an indium tin oxide layer for conduction. In addition, the zinc oxide nanolayer can form a composite conductive structure with the metal grid layer and the zinc oxide layer, which can further reduce resistance and help to further improve the conductive performance of the conductive glass. In addition, the zinc oxide nanolayer helps to improve the bonding between the indium tin oxide layer and the glass substrate, and the structure is stable. In addition, the zinc oxide nanolayer can also reduce the impact of thermal and mechanical stress on the indium tin oxide layer caused by the glass substrate.

[0051] In one embodiment of the present application, see Figure 1 The zinc oxide nanolayer includes a plurality of zinc oxide nanowires, which are connected between the zinc oxide conductive layer and the indium tin oxide layer, penetrate the mesh of the metal grid layer, and are approximately perpendicular to the glass substrate and the indium tin oxide layer.

[0052] In this way, the zinc oxide nanolayer is composed of a plurality of zinc oxide nanowires, and the plurality of zinc oxide nanowire arrays are arranged on the surface of the zinc oxide layer and pass through the meshes of the metal grid layer. Under the action of the metal grid layer, the structural stability of the zinc oxide nanolayer is improved, thereby further reducing the influence of the thermal stress and mechanical stress of the glass substrate on the indium tin oxide layer, and greatly improving the structural stability of the conductive glass.

[0053] In one embodiment of the present application, please refer to Figure 1 The conductive glass also includes an anti-reflection layer, which is arranged on the side of the glass substrate facing away from the zinc oxide layer.

[0054] Such arrangement and the use of a transmittance-enhancing layer can help to improve the light transmittance of the conductive glass.

[0055] Optionally, the surface of the anti-reflection layer is provided with a rough suede surface.

[0056] Such a configuration, by providing a rough velvet surface on the surface of the anti-reflection layer, helps to increase the surface roughness of the anti-reflection layer, helps to reduce the total reflectivity when light is incident on the glass substrate, further increases the transmittance of light, and thus improves the light extraction efficiency of the conductive glass.

[0057] Optionally, the anti-reflection layer is configured as an optical resin.

[0058] like Figures 2 to 4 As shown, the present application also provides a conductive glass production process, which at least includes the following steps:

[0059] Step S10: preparing a glass substrate.

[0060] Step S20: preparing a zinc oxide layer.

[0061] Specifically, according to the parameters of the zinc oxide layer, the zinc oxide layer is prepared by chemical vapor deposition, magnetron sputtering, sol-gel method or laser molecular beam extension method.

[0062] Step S30: preparing a metal mesh layer.

[0063] Specifically, according to the parameters of the metal mesh layer, the metal mesh layer is prepared on the surface of the zinc oxide layer by using a photolithography method, a laser engraving method or a printing method.

[0064] Step S40: preparing a zinc oxide nanolayer.

[0065] Step S50: preparing an indium tin oxide layer.

[0066] Specifically, the indium tin oxide layer is prepared by chemical vapor deposition, magnetron sputtering, sol-gel, hydrothermal or electrochemical deposition.

[0067] The conductive glass production process provided in the present application adopts the above steps to prepare the zinc oxide layer, the metal grid layer and the zinc oxide nanolayer between the glass substrate and the indium tin oxide layer, which helps to improve the conductive properties of the conductive glass.

[0068] In one embodiment of the present application, see Figures 2 to 4 In the step of preparing the zinc oxide nanolayer, at least the following steps are included:

[0069] Step 41: Prepare a mixed solution using zinc nitrate hexahydrate, hexamethylenetetramine and polyethyleneimine.

[0070] Step 42: Grow zinc oxide nanowires in a water bath, and place the glass substrate prepared with the zinc oxide layer and the metal grid layer and the mixed solution in a constant temperature water bath.

[0071] In this way, polyethyleneimine is used as a surfactant, which can be adsorbed on the side of the zinc oxide nanowire, change the surface free energy and growth rate of the side of the zinc oxide nanowire, limit its radial growth, and help prepare hexagonal zinc oxide nanowires. Zinc nitrate hexahydrate can provide zinc ions, and hexamethylenetetramine can provide hydroxide ions. Under the action of ammonium nitrate hexahydrate and hexamethylenetetramine, more zinc oxide nanowires are generated.

[0072] In one embodiment of the present application, please refer to Figures 2 to 4 In the step of growing zinc oxide nanowires in a water bath, the water bath temperature is 95°C.

[0073] In this way, when the water bath temperature is lower than 95°C, the gaps between the zinc oxide nanowires are smaller, the space is smaller, the end faces are tapered, some zinc oxide nanowires are prone to agglomeration, and the molding quality of the zinc oxide nanowires is poor. Therefore, the water bath temperature is controlled at 95°C, and the aspect ratio of the zinc oxide nanowires is the largest.

[0074] In one embodiment of the present application, see Figures 2 to 4 , in the step of growing zinc oxide nanowires in a water bath, the water bath time is 9 hours.

[0075] In this way, when the water bath time is less than 9 hours, the concentration of zinc ions and hydroxide ions in the mixed solution is large, the growth time is short, the zinc oxide nanowires grow preferentially perpendicular to the glass substrate, and the end face is small and tapered. When the water bath time is greater than 9 hours, the zinc ions and hydroxide ions in the mixed solution are less, the growth rate of the zinc oxide nanowires slows down, and the axial growth rate of the zinc oxide nanowires is less than the radial growth rate. Therefore, the water bath time is controlled at 9 hours, and the aspect ratio of the zinc oxide nanowires is the largest.

[0076] In one embodiment of the present application, see Figures 2 to 4 In the step of growing zinc oxide nanowires in a water bath, the concentration of polyethyleneimine was 4.5 mmol / L.

[0077] In this way, when the concentration of polyethyleneimine is less than 4.5mmol / L, the gaps between the zinc oxide nanowires become larger, the agglomeration phenomenon disappears, the diameter of the zinc oxide nanowires decreases, the end faces are basically hexagonal, and the size is uneven. When the concentration of polyethyleneimine is greater than 4.5mmol / L, the zinc oxide nanowires become shorter, the diameter continues to decrease, the gaps between the zinc oxide nanowires become smaller, the arrangement is close, and the top is needle-shaped. Therefore, when the concentration of polyethyleneimine is 4.5mmol / L, the aspect ratio is the largest. A high aspect ratio can provide more conductive paths, help reduce resistance, and thus help improve the conductive properties of conductive glass. In addition, a high aspect ratio can provide better structural stability, reduce the possibility of cracks and fractures, and help improve the structural stability of conductive glass.

[0078] In one embodiment of the present application, please refer to Figures 2 to 4 In the step of preparing the zinc oxide nanolayer, at least the following steps are included:

[0079] Step 43: Cleaning: taking out the glass substrate prepared with the zinc oxide layer, the metal grid layer and the zinc oxide nanolayer from the constant temperature water bath, and washing, air-drying and baking them in sequence.

[0080] Specifically, after being washed and air-dried, the glass substrate prepared with the zinc oxide layer, the metal grid layer and the zinc oxide nanolayer was placed in a muffle furnace and baked for 30 minutes.

[0081] Such an arrangement can remove organic residues on the surface, which helps to improve the molding quality of the conductive glass.

[0082] In one embodiment of the present application, see Figures 2 to 4 In the step of preparing the glass substrate, at least the following steps are included:

[0083] Step 11: Cleaning: ultrasonically clean the glass substrate in acetone, ethanol and distilled water in sequence;

[0084] Step 12: Blow dry with nitrogen.

[0085] With such a configuration, acetone can effectively remove grease, wax and organic residues. Ethanol can further remove organic residues. Distilled water can remove acetone and ethanol in the cleaning process to ensure the cleanliness of the glass substrate. In addition, the use of acetone and ethanol can reduce damage to the glass substrate and prevent corrosion. Ultrasonic cleaning can effectively reduce damage to the glass substrate while ensuring the cleaning effect. In summary, the above steps have a good cleaning effect and help improve the molding quality of the conductive glass.

[0086] One or more embodiments of the present application are intended to cover all such substitutions, modifications and variations that fall within the broad scope of the present application. Therefore, any omissions, modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of one or more embodiments of the present application should be included in the protection scope of the present application.

Claims

1. A conductive glass, It is characterized in that include: Glass substrate; An indium tin oxide layer, wherein the indium tin oxide layer is disposed on one side of the glass substrate; A metal mesh layer, wherein the metal mesh layer is disposed between the glass substrate and the indium tin oxide layer; A zinc oxide layer, wherein the zinc oxide layer is disposed between the glass substrate and the metal grid layer; The zinc oxide nanolayer is disposed between the zinc oxide layer and the indium tin oxide layer and penetrates the metal grid layer.

2. The conductive glass according to claim 1, It is characterized in that The zinc oxide nanolayer includes a plurality of zinc oxide nanowires, and the plurality of zinc oxide nanowires are connected between the zinc oxide conductive layer and the indium tin oxide layer, and pass through the meshes of the metal grid layer.

3. The conductive glass according to claim 1, It is characterized in that The conductive glass further comprises an anti-reflection layer, and the anti-reflection layer is arranged on a side of the glass substrate facing away from the zinc oxide layer.

4. A process for producing the conductive glass according to any one of claims 1 to 3, It is characterized in that At least the following steps are included: preparing the glass substrate; preparing the zinc oxide layer; preparing the metal mesh layer; preparing the zinc oxide nanolayer; The indium tin oxide layer is prepared.

5. The production process of conductive glass according to claim 4, It is characterized in that The step of preparing the zinc oxide nanolayer comprises at least the following steps: preparing a mixed solution, using zinc nitrate hexahydrate, hexamethylenetetramine and polyethyleneimine to prepare the mixed solution; The zinc oxide nanowires are grown in a water bath, and the glass substrate prepared with the zinc oxide layer and the metal grid layer and a mixed solution are placed in a constant temperature water bath device.

6. The process for producing the conductive glass according to claim 5, It is characterized in that In the step of growing zinc oxide nanowires in a water bath, the water bath temperature is 95°C.

7. The process for producing the conductive glass according to claim 5, It is characterized in that In the step of growing zinc oxide nanowires in a water bath, the water bath time is 9 hours.

8. The process for producing conductive glass according to claim 5, It is characterized in that In the step of growing zinc oxide nanowires in a water bath, the concentration of polyethyleneimine was 4.5 mmol / L.

9. The process for producing conductive glass according to claim 5, It is characterized in that The step of preparing the zinc oxide nanolayer comprises at least the following steps: Cleaning, taking out the glass substrate prepared with the zinc oxide layer, the metal grid layer and the zinc oxide nanolayer from the constant temperature water bath equipment, washing, air-drying and baking in sequence.

10. The process for producing conductive glass according to claim 4, It is characterized in that The step of preparing the glass substrate includes at least the following steps: Cleaning: ultrasonically cleaning the glass substrate in acetone, ethanol and distilled water in sequence; Blow dry with nitrogen.

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