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60results about How to "Increase the conductive path" patented technology

Organic silica gel/three-dimensional graphene carbon nanocomposite-based small-sized pressure sensor

The technical invention introduces an organic silica gel/three-dimensional graphene carbon nanocomposite-based small-sized pressure sensor. Graphene-like carbon nanomaterials have high application value in the fields such as supercapacitors, lithium ion battery anodes, catalysis, adsorption, and sensors. According to the small-sized pressure sensor of the invention, a three-dimensional graphene-like carbon nanomaterial is obtained by means of a thermochemical reaction between magnesium powder and carbon disulfide; and the three-dimensional graphene-like carbon nanomaterial, adopted as a conductive medium, fills polydimethylsiloxane silica gel, so that a piezoresistive sensing material can be obtained; and a laser marking machine is adopted to etch an interdigital pattern on a Cu/PET thin film; and the interdigital pattern is coated with a liquid PDMS (polydimethylsiloxane) nanocomposite material, the liquid PDMS nanocomposite material is solidified, so that the small-sized pressure sensor can be obtained. The device has the advantages of wide measurement range and high sensitivity. The small-sized pressure sensors can be made into an array which can be applied to plantar pressure distribution testing or other fields.
Owner:BEIHANG UNIV

Transverse high-pressure device and manufacturing method thereof

The invention provides a transverse high-pressure device and a manufacturing method thereof. A cellular structure of the device comprises a first conductive-type semiconductor substrate and second conductive-type semiconductor drift regions. The plurality of second conductive-type semiconductor drift regions are laminated from down to up in sequence. The method comprises the steps of: adopting an epitaxial technology to successively form the second conductive-type semiconductor drift regions; forming a first conductive-type semiconductor reduced-field layer, a second conductive-type semiconductor heavily doped layer and a first conductive-type semiconductor body region in each second conductive-type semiconductor drift region in an injecting manner. According to the invention, a conventional drift region structure is made into a drift region structure with a plurality of layers of superposed drift regions, so that each sub drift region is provided with a low-resistance nearest conductive path, and the conduction resistance of the device is lowered; and in an off state, the reduced-field layer in each drift region assists to consume the drift region, so that the breakdown voltage of the device is increased, and the contradiction relation between the conduction resistance and a withstand voltage is relieved.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA

Lateral high-voltage device and manufacturing method thereof

The invention provides a lateral high-voltage device and a manufacturing method thereof. A device cell structure comprises a first conducting-type semiconductor substrate and drift regions of a second conducting-type semiconductor, wherein a plurality of sub-drift regions of the second conducting-type semiconductor are sequentially stacked on the drift regions of the second conducting-type semiconductor from bottom to top. The method comprises the following steps: injecting the first drift region of the second conducting-type semiconductor into the first conducting-type semiconductor substrate by an ion implantation technology; sequentially forming other sub-drift regions of the second conducting-type semiconductor by an epitaxy technique; and forming reduced-field layers of the first conducting-type semiconductor and heavily-doped layers of the second conducting-type semiconductor in the sub-drift regions of the second conducting-type semiconductor by ion implantation. According to the lateral high-voltage device, a traditional drift region is manufactured into a structure of superposing a plurality of layers of drift regions, so that a nearest low-resistance conductive path is formed in each sub-drift region; the on-resistance can be reduced; and in a closed state, the reduced-field layer in each drift region exhausts each drift region in an assist manner, so that the breakdown voltage of the device is improved.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA

Lateral trench insulated gate bipolar translator (IGBT) having self-biased positive channel metal oxide semiconductor (PMOS) and its preparation method

The invention belongs to the technical field of power semiconductor devices and relates to a lateral trench insulated gate bipolar translator (IGBT) having a positive channel metal oxide semiconductor(PMOS) and its preparation method. Based on a lateral IGBT (LIGBT) device structure, a current carrier storage layer is added to the lateral-trench IGBT having the self-biased PMOS to enhance the conductivity modulation effect, and reduce the device conduction pressure drop; a side face of a grid electrode is wrapped by a sorting grid to reduce the Miller capacitance, reduce the turn-off time, reduce the turn-off loss, and improve the compromise between the forward conduction voltage drop and the turn-off loss; in the meanwhile, the gate charge of a device can be reduced, and drive loss is reduced; the compromise characteristic between a current decline rate (di/dt) and the conduction loss (Eon) is improved; automatic turn-on of a metal-oxide-semiconductor field-effect transistor (MOSFET)is self-biased during forward conduction, a voltage of a charge storage area is clamped, a saturation current is reduced and a short-circuit safe working area is optimized; the turn-on of the MOSFETself-biased in a preliminary stage is turned off, extraction of remaining current carriers of a drift region is accelerated, and the turn-off loss is reduced; a buried layer on a left side of trench gate can assist voltage resistance, and a blocking voltage is increased; and a thin gate oxide layer can reduce a threshold voltage of the device, and reduce the current densify of a latch.
Owner:UNIV OF ELECTRONIC SCI & TECH OF CHINA

Silver conductor paste with strong adhesive force for 5G ceramic dielectric filter

The invention discloses silver conductor paste with strong adhesive force for a 5G ceramic dielectric filter. The silver conductor paste comprises the following components in percentage by weight: 55-70% of spherical silver powder, 6-20% of flake silver powder, 0.5-3% of glass powder, 0.2-2% of a mixture of active dolomite powder and cryolite powder after heat treatment, 8-15% of an organic carrier, 1-5% of a paste modifier and 5-11% of an organic diluent. The dolomite powder and cryolite powder raw materials are subjected to heat treatment to form an active dolomite powder and cryolite powder mixture, the active dolomite powder and cryolite powder mixture is added into the conductive silver paste, the high-adhesive-force silver conductor paste is finally obtained, peeling does not occur at the drawing position, and meanwhile it is tested that weldability is good, and conductivity is excellent. After the silver conductor paste is applied to series 5G ceramic dielectric filter ceramic chips, the leveling property is good, a metallized film layer is flat, the adhesive force is improved, meanwhile, the conductive performance of the paste is considered, the insertion loss of a filter can be effectively reduced, and the filter has a high quality factor.
Owner:西安宏星电子浆料科技股份有限公司

Mixed coordination metal carbon nano-film hydrogel flexible bending sensing unit, preparation method thereof and flexible bending sensor

The invention discloses a mixed coordination metal carbon nano-film hydrogel flexible bending sensing unit, a preparation method thereof and a flexible bending sensor, and the preparation method comprises the following steps: taking titanium and carbon as double targets, and generating a mixed coordination metal carbon nano-film by using a microwave plasma double-target magnetron sputtering technology; dispersing the mixed coordination metal carbon nano-film, a polymer preparation and a bipolar material in a water solvent, and carrying out ultrasonic stirring treatment to prepare the mixed coordination metal carbon nano-film hydrogel; then sequentially stacking metal electrodes and I-shaped adhesive tapes on the upper surface and the lower surface of the mixed coordination metal carbon nano-film hydrogel to prepare the mixed coordination metal carbon nano-film hydrogel flexible bending sensing unit. According to the invention, the hydrogel flexible bending sensing unit which is uniform in conductive network, high in sensitivity, stable in working and excellent in performance is manufactured through a simple stirring process, and therefore accurate measurement of external stimulation is achieved.
Owner:SHENZHEN UNIV
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