Resistance-type flexible pressure sensor and preparation method thereof

A pressure sensor and resistive technology, applied in the field of resistive flexible pressure sensor and its preparation, can solve the problems of difficult control of process parameters, cumbersome steps, many materials, etc., and achieve the effects of low cost, simple process and improved sensitivity

Pending Publication Date: 2020-04-24
INST OF FLEXIBLE ELECTRONICS TECH OF THU ZHEJIANG +1
View PDF0 Cites 20 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] In the traditional resistive flexible pressure sensor, the microstructure is mainly prepared by silicon mold etching, magnetron sputtering, oxygen plasma treatment, 3D printing and other methods. Not only the steps are cumbersome, the material is too mu

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Resistance-type flexible pressure sensor and preparation method thereof
  • Resistance-type flexible pressure sensor and preparation method thereof
  • Resistance-type flexible pressure sensor and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0030] The manufacturing method of the resistive flexible pressure sensor provided by the present invention includes:

[0031] S1, providing a first flexible substrate, and using a laser to etch a surface of the first flexible substrate to form microstructures of at least two heights;

[0032] S2, forming a conductive layer on the surface of the first flexible substrate with the microstructure to obtain a first flexible substrate;

[0033] S3, providing a second flexible substrate, wherein the second flexible substrate includes a second flexible substrate and an electrode provided on a surface of the second flexible substrate; and

[0034] S4: Laminating the second flexible substrate on the first flexible substrate, and contacting the electrode with part of the conductive layer to obtain a resistive flexible pressure sensor.

[0035] In step S1, the thickness of the first flexible substrate is 50 μm to 200 μm, and the material of the first flexible substrate is an insulating polymer mat...

Example Embodiment

[0079] Example 1:

[0080] (1) Weigh 1g of polydimethylsiloxane (PDMS) prepolymer in a beaker, then weigh 0.1g of curing agent into the beaker and stir evenly, and place it under 0.1 Torr vacuum for 10 minutes to remove bubbles. A clean glass substrate was selected, and the above-mentioned mixture was spin-coated on its surface at a rotation speed of 500 rpm and a time of 10 s, and cured at 60° C. to obtain a first flexible substrate and a second flexible substrate with a thickness of 100 μm.

[0081] (2) A pulsed laser with a wavelength of 355nm and a pulse width of 500fs is used to etch the grid pattern on the surface of the first flexible substrate, the horizontal and vertical grid filling spacing is 20 microns, the laser single pulse energy is 10μJ, and the scanning speed is 500mm / s, three height microstructures are obtained after the etching is completed.

[0082] (3) Prepare the AgNWs ethanol solution with a concentration of 10mg / mL, treat the surface of the microstructure wit...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Wavelengthaaaaaaaaaa
Login to view more

Abstract

The invention relates to a resistance-type flexible pressure sensor and a preparation method thereof, and the preparation method comprises the steps: providing a first flexible substrate, employing laser to etch one surface of the first flexible substrate, and forming microstructures with at least two heights; forming a conductive layer on the surface, with the microstructures, of the first flexible substrate to obtain a first flexible substrate; providing a second flexible substrate, wherein the second flexible substrate comprises a second flexible substrate and an electrode arranged on one surface of the second flexible substrate; and arranging the second flexible substrate on the first flexible substrate in a stacked manner, and enabling the electrode to be in contact with part of the conductive layer to obtain the resistance-type flexible pressure sensor. The preparation method is simple in process, easy to control and suitable for industrial large-scale production, and the obtained sensor can improve the detection range and reliability while improving the sensitivity.

Description

technical field [0001] The invention relates to the technical field of flexible electronics, in particular to a resistive flexible pressure sensor and a preparation method thereof. Background technique [0002] In the traditional resistive flexible pressure sensor, the microstructure is mainly prepared by silicon mold etching, magnetron sputtering, oxygen plasma treatment, 3D printing and other methods. Not only the steps are cumbersome, the materials used are large, but also the process parameters are difficult to control. [0003] In addition, traditional resistive flexible pressure sensors are difficult to maintain high sensitivity while having a wide detection range, and are also lacking in extremely low sensitivity. Contents of the invention [0004] Based on this, it is necessary to provide a resistive flexible pressure sensor and a preparation method thereof for the above problems; the preparation method is simple in process, easy to control, suitable for industrial...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G01L1/22
CPCG01L1/2293
Inventor 冯雪杜琦峰陈颖
Owner INST OF FLEXIBLE ELECTRONICS TECH OF THU ZHEJIANG
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products