Semiconductor process device

Abstract

A semiconductor process apparatus includes: a main chamber; the bearing structure is arranged in the main cavity and is used for bearing a wafer; the secondary chamber is communicated with the main chamber through the side part of the main chamber; the heater is arranged in the secondary chamber; and the transmission structure is arranged in the secondary chamber, is connected with the heater, and is used for transmitting the heater from the secondary chamber to the interior of the main chamber and above the bearing structure. According to the invention, a better semiconductor technological process can be realized.

Description

Technical Field

[0001] The embodiments of the present invention relate to the field of semiconductor manufacturing, and in particular to a semiconductor process device. Background Art

[0002] Magnetron sputtering is a type of physical vapor deposition (PVD) technology and is the most widely used thin film manufacturing technology in the semiconductor industry. With the development of integrated circuits, in order to reduce chip loss and RC delay and increase chip speed, copper with lower resistivity has gradually replaced other materials and has been widely used in the back-end interconnection process of semiconductor manufacturing.

[0003] In the existing copper interconnection process, since copper is difficult to etch, a large number of Damascus double nested structures are used in the copper interconnection process. The copper Damascus structure first forms through holes and interconnection line grooves in the metal interlayer by etching, and then deposits a barrier layer (such as TiN) and a copper seed layer by PVD, and then deposits a large amount of copper by chemical electroplating. When depositing the copper seed layer, due to the increasingly smaller chip feature size and the high depth-to-width ratio of the groove, when depositing copper, not all metal atoms are deposited layer by layer vertically at the bottom of the groove, which results in the deposition of the top of the groove hanging or even blocking the opening due to the rapid growth rate of the copper film at the opening of the groove, forming a cavity at the bottom of the groove and affecting the electrical performance of the chip. In this regard, in order to ensure that the copper material can be smoothly filled in the through-hole structure, it is usually necessary to perform a reflow process of the copper film after completing the deposition process of the barrier layer (such as TiN) and the copper seed layer. Since particle size has a great influence on the melting thermodynamic properties of metals, as the metal particle size decreases, its melting temperature also decreases, and the copper surface energy and surface tension at the nanoscale increase. Based on this, during the copper reflow process, by heating the copper to 300°C or above, the melted copper film atoms can gradually migrate to the bottom of the groove under the copper surface tension and the capillary action of the groove to achieve better filling.

[0004] Existing PVD equipment usually adds a heat radiation source inside the chamber to heat the wafer during the reflow process. However, one of the current settings of the heat radiation source is to place it at the periphery of the chamber, far away from the wafer, resulting in low heating efficiency and poor heating uniformity for the wafer. Another setting is to set it on the transmission device used to transmit the shielding disk, but this method makes it difficult to concentrate the radiated heat on the wafer surface. Most of the heat is irradiated to areas outside the wafer, resulting in more heat loss, low heating efficiency and poor heating uniformity for the wafer. Summary of the invention

[0005] The problem solved by the embodiments of the present invention is to provide a semiconductor process device, which is conducive to realizing a better semiconductor process.

[0006] To solve the above problems, an embodiment of the present invention provides a semiconductor process device, including: a main chamber; a supporting structure, arranged in the main chamber, for supporting a wafer; a secondary chamber, connected to the main chamber through the side of the main chamber; a heater, arranged in the secondary chamber; a transmission structure, arranged in the secondary chamber and connected to the heater, for transmitting the heater from the secondary chamber to the main chamber, above the supporting structure.

[0007] Optionally, the side of the heater facing the bearing structure is the heating surface, and a temperature sensor is arranged on the heating surface; the side of the heater facing away from the bearing structure is the installation surface, and the transmission structure is arranged on one side of the installation surface of the heater.

[0008] Optionally, the temperature sensor is arranged at the center of the heater and at the edge of the heater.

[0009] Optionally, the temperature sensor comprises a thermocouple.

[0010] Optionally, the semiconductor process device also includes: a mounting plate, which contacts the mounting surface to fix the heater on the mounting plate; a transmission structure passes through the chamber wall at the top of the secondary chamber, so that one end is fixed to the mounting plate and the other end is located outside the secondary chamber; the semiconductor process device also includes: a heater driving structure, which is arranged at the other end of the transmission structure, and is used to drive the transmission structure to transmit the heater between the secondary chamber and the main chamber.

[0011] Optionally, the transmission structure includes a transmission shaft rotatable around its axis, which is used to drive the heater to rotate around the transmission shaft to realize the transmission of the heater in the secondary chamber and the main chamber. The transmission shaft is arranged at the edge of the heater near the connection position between the main chamber and the secondary chamber.

[0012] Optionally, a mapping surface of the heater on the supporting structure is greater than or equal to an area of ​​the wafer.

[0013] Optionally, the shape of the heater includes circle, square or polygon.

[0014] Optionally, the heater comprises a heating wire.

[0015] Optionally, the supporting structure is a first lifting structure, used to move the wafer in the longitudinal direction so as to move the wafer closer to the heater when the heater is transferred from the secondary chamber to the main chamber; or, the transmission structure is also used to move the heater in the longitudinal direction so as to move the heater closer to the wafer when the heater is transferred from the secondary chamber to the main chamber.

[0016] Optionally, the semiconductor process device also includes: a second lifting structure, which is arranged at the bottom position of the main chamber, and the second lifting structure is used to move the wafer in the longitudinal direction, so as to raise the wafer to realize physical vapor deposition processing, and to lower the wafer to realize the transfer of the wafer between the second lifting structure and the supporting structure.

[0017] Optionally, the second lifting structure includes: an electrostatic chuck, used to carry the wafer to move the wafer in the longitudinal direction; the carrying structure includes: a plurality of ejector pins, distributed around the center of the electrostatic chuck and penetrating the electrostatic chuck, used to contact the wafer to move the wafer in the longitudinal direction.

[0018] Compared with the prior art, the technical solution of the embodiment of the present invention has the following advantages:

[0019] The semiconductor process device provided in the embodiment of the present invention includes a main chamber, a supporting structure, which is arranged in the main chamber and is used to support wafers, a secondary chamber, which is connected to the main chamber through the side of the main chamber, a heater, which is arranged in the secondary chamber, and a transmission structure, which is arranged in the secondary chamber and connected to the heater, and is used to transmit the heater from the secondary chamber to the main chamber and above the supporting structure; in the embodiment of the present invention, the secondary chamber is used to store the heater, and when heating is required, the heater can be transmitted from the secondary chamber to the main chamber to heat the wafer, and the device has a simple structure and is easy to operate. At the same time, using the heater to heat the wafer from above is conducive to achieving more sufficient heating of the wafer, thereby facilitating a better semiconductor process. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 to Figure 2 It is a structural schematic diagram of an embodiment of a semiconductor process device of the present invention. DETAILED DESCRIPTION

[0021] As can be seen from the background technology, in the current semiconductor manufacturing field, as the feature size continues to decrease, a copper reflow process has been introduced in the back-end copper interconnection process, that is, a copper seed layer is grown on the wafer by physical vapor deposition (PVD) and then the wafer is heated by a heating lamp. After being heated to a certain temperature, the copper on the surface of the wafer reaches a flowing temperature, and at the same time, relying on the capillary action of the voids on the wafer structure, the copper flows into the holes to achieve copper filling.

[0022] The existing technology uses infrared lamps to heat the wafer, and the temperature of the wafer is not easy to control. This heating method cannot effectively monitor the actual temperature of the wafer after it is heated. If the temperature is too low, the copper cannot reach the reflow temperature, which will cause voids after electroless plating (ECP); if the heating temperature is too high, the liner layer under the copper will reflow, which will also cause voids and other problems.

[0023] Moreover, due to the differences in wafer materials and thicknesses, the efficiency of infrared absorption is also different, which will result in inconsistent temperatures obtained on different wafers with the same heating time.

[0024] In order to solve the above technical problems, an embodiment of the present invention provides a semiconductor process device, including: a main chamber; a supporting structure, arranged in the main chamber, for supporting a wafer; a secondary chamber, connected to the main chamber through the side of the main chamber; a heater, arranged in the secondary chamber; a transmission structure, arranged in the secondary chamber and connected to the heater, for transmitting the heater from the secondary chamber to the main chamber, above the supporting structure.

[0025] In the embodiment of the present invention, the secondary chamber is used to store the heater. When heating is required, the heater can be transferred from the secondary chamber to the main chamber to heat the wafer. The device has a simple structure and is easy to operate. At the same time, using the heater to heat the wafer from above is conducive to achieving more sufficient heating of the wafer, thereby facilitating a better semiconductor process.

[0026] In order to make the above-mentioned purposes, features and advantages of the embodiments of the present invention more obvious and understandable, specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0027] Figure 1 to Figure 2 It is a structural schematic diagram of an embodiment of a semiconductor process device of the present invention.

[0028] refer to Figure 1 to Figure 2 , Figure 1 and Figure 2 The schematic diagram of the structure of a semiconductor process device in different states is shown, and the semiconductor process device includes: a main chamber 20; a supporting structure 17, which is arranged in the main chamber 20 and is used to support a wafer 12; a secondary chamber 21, which is connected to the main chamber 20 through the side of the main chamber 20; a heater 9, which is arranged in the secondary chamber 21; a transmission structure 7, which is arranged in the secondary chamber 21 and is connected to the heater 9, and is used to transmit the heater 9 from the secondary chamber 21 to the main chamber 20 and above the supporting structure 17.

[0029] The main chamber 20 is used for performing semiconductor manufacturing processes on the wafer 12 .

[0030] Specifically, in this embodiment, the main chamber 20 is used to perform physical vapor deposition processing and heating processing on the wafer 12 .

[0031] The supporting structure 17 is used to support the wafer 12 in the main chamber 20 so as to perform semiconductor process on the wafer 12 .

[0032] In this embodiment, the supporting structure 17 is a first lifting structure 19 for moving the wafer 12 in the longitudinal direction, so as to move the wafer 12 closer to the heater 9 when the heater 9 is transferred from the secondary chamber 21 to the main chamber 20 .

[0033] The supporting structure 17 is a first lifting structure 19, that is, the first lifting structure 19 can support the wafer 12 and move the wafer 12 in the longitudinal direction. Specifically, Figure 2 As shown, before the heater 9 is transferred to the main chamber 20, the first lifting structure 19 can lower the wafer 12 to a lower position to leave space for the heater 9 to be transferred to the main chamber 20. After the heater 9 is transferred to the main chamber 20, the first lifting structure 19 can raise the wafer 12 to a higher position to be close to the heater 9 so that the heater 9 can heat the wafer 12.

[0034] In other embodiments, the bearing structure may also be a bearing structure with a fixed position.

[0035] In this embodiment, the supporting structure 17 is disposed at the bottom of the main chamber 20 .

[0036] The supporting structure 17 is disposed at the bottom of the main chamber 20 , so that the semiconductor process for the wafer 12 on the supporting structure 17 is simpler and it is easier to realize the longitudinal movement of the supporting structure 17 as the first lifting structure 19 .

[0037] In this embodiment, the supporting structure 17 includes a plurality of pins 14 for contacting the wafer 12 to move the wafer 12 in the longitudinal direction.

[0038] Specifically, a plurality of ejector pins 14 are distributed around the center of the wafer 12 , and the number of the ejector pins 14 is at least three to support the wafer 12 . In this embodiment, for clarity of illustration, only two ejector pins 14 are shown.

[0039] In this embodiment, the semiconductor process device further includes: a mounting bracket 15 for fixing the ejector pins 14 on the mounting bracket 15 ; and an ejector pin driving structure 16 for driving the ejector pins 14 to move in the longitudinal direction to drive the wafer 12 .

[0040] Specifically, in this embodiment, the ejector drive structure 16 drives the mounting bracket 15 and the ejector 14 to move in the longitudinal direction as a whole.

[0041] In this embodiment, the ejector drive structure 16 is an ejector motor.

[0042] The secondary chamber 21 is used to store the heater 9 .

[0043] In the present embodiment, the secondary chamber 21 is connected to the main chamber 20 through the side of the main chamber 20, so that when other process steps are carried out in the main chamber 20, the heater 9 will not interfere, and when the main chamber 20 needs to be heated, the heater 9 can be transferred to the main chamber 20 at any time. Moreover, the secondary chamber 21 only serves to store the heater 9, so the required space is not large, which can save space for the process equipment.

[0044] In this embodiment, the supporting structure 17 is arranged at the bottom of the main chamber 20, and the wafer 12 is also placed near the bottom of the main chamber 20. Correspondingly, the secondary chamber 21 is connected to the main chamber 20 through the side near the bottom of the main chamber 20, so as to facilitate heating treatment of the wafer 12.

[0045] The heater 9 is used to heat the wafer 12 .

[0046] In this embodiment, the secondary chamber 21 is used to store the heater 9. When heating is needed, the heater 9 can be transferred from the secondary chamber 21 to the main chamber 20 to heat the wafer 12. The device has a simple structure and is easy to operate. At the same time, using the heater 9 to heat the wafer 12 from above is conducive to achieving more sufficient heating of the wafer 12, thereby facilitating a better semiconductor process.

[0047] In this embodiment, the mapping surface of the heater 9 on the supporting structure 17 is greater than or equal to the area of ​​the wafer 12 .

[0048] The mapping surface of the heater 9 on the supporting structure 17 refers to the surface on which the heater 9 is mapped on the supporting structure 17 when the heater 9 is transferred to above the supporting structure 17 in the main chamber 20 .

[0049] The mapping surface of the heater 9 on the supporting structure 17 is larger than or equal to the area of ​​the wafer 12 , so that the heater 9 can fully cover the wafer 12 , thereby heating the wafer 12 more fully.

[0050] In this embodiment, the shape of the heater 9 is not limited, and the shape of the heater 9 includes circular, square or polygonal.

[0051] As an example, in this embodiment, the shape of the heater 9 is circular.

[0052] The heater 9 is circular in shape, which is more compatible with the shape of the wafer 12 and makes it easier to fully heat the wafer 12 .

[0053] In this embodiment, the heater 9 includes a heating wire.

[0054] The heater 9 includes a heating wire, and heats the wafer 12 by heat conduction, which is conducive to more sufficient heating.

[0055] As an example, in this embodiment, the heating wire is a ring-shaped heating wire.

[0056] The wafer 12 is heated by heat conduction through the annular heating wire, so that the wafer 12 can be heated relatively evenly and fully.

[0057] Specifically, in this embodiment, the heating wire is used to contact the wafer 12 to heat the wafer 12 .

[0058] It should be noted that, in this embodiment, the heating wire is connected to the structural frame of the heater 9 via a conductive slip ring, so that when the heater 9 rotates, the heating wire is driven to rotate along with it via the conductive slip ring.

[0059] In this embodiment, the side of the heater 9 facing the supporting structure 17 is the heating surface, and a temperature sensor 10 is arranged on the heating surface.

[0060] The side of the heater 9 facing the supporting structure 17 refers to the side of the heater 9 facing the supporting structure 17 when the heater 9 is transferred to the main chamber 20 .

[0061] The temperature sensor 10 is used to monitor the heating temperature of the wafer 12 .

[0062] Specifically, in this embodiment, when the heater 9 is used to heat the wafer 12, the temperature sensor 10 is also used to monitor the temperature of the wafer 12 in real time. The heating process parameters of the heater 9 can also be adjusted according to the real-time monitored temperature of the wafer 12. The temperature of the heater 9 can be accurately controlled to a temperature that meets the process requirements through an electrical program, so as to control the temperature of the wafer 12 to rise to the temperature required by the process, and it is not easy for the temperature to be too low or too high, which is conducive to making the temperature of the wafer 12 more accurately controllable during the heating treatment.

[0063] In this embodiment, the temperature sensor 10 is disposed at the center of the heater 9 and at the edge of the heater 9 .

[0064] The temperature sensor 10 is arranged at the center of the heater 9 and the edge of the heater 9. Accordingly, the temperature sensor 10 located at the center of the heater 9 can monitor the temperature of the middle of the wafer 12 in real time, and the temperature sensor 10 located at the edge of the heater 9 can monitor the temperature of the edge of the wafer 12 in real time. The arranged temperature sensors 10 can monitor the temperature of the entire wafer 12 more comprehensively, which is beneficial to avoid inconsistent heating temperatures at different positions on the wafer 12 as much as possible, improve the consistency of the temperature of the wafer 12, and thus help to achieve a more uniform heating effect on the wafer 12.

[0065] Specifically, in this embodiment, the temperature sensor 10 includes a thermocouple.

[0066] The transmission structure 7 is used to transmit the heater 9 between the main chamber 20 and the secondary chamber 21 .

[0067] In this embodiment, the side of the heater 9 facing away from the bearing structure 17 is used as the installation surface, and the transmission structure 7 is arranged on one side of the installation surface of the heater 9 .

[0068] The side of the heater 9 facing away from the supporting structure 17 refers to the side of the heater 9 facing away from the supporting structure 17 when the heater 9 is transferred to the main chamber 20 .

[0069] The transmission structure 7 is arranged on one side of the installation surface of the heater 9, which has little effect on the heating effect of the heater 9. In order to ensure that the heater 9 does not interfere with the supporting structure 17 when it is transmitted to the main chamber 20 and has a certain safety distance, the heating surface of the heater 9 needs to have a large distance from the bottom of the secondary chamber 21, while the installation surface of the heater 9 does not need to have a large distance from the top of the secondary chamber 21. Therefore, the transmission structure 7 is arranged on one side of the installation surface of the heater 9, which is easy to implement and install, and can save the length of the transmission structure 7, making the transmission structure 7 more stable.

[0070] In this embodiment, the transmission structure 7 includes a transmission shaft that can rotate around its axis, which is used to drive the heater 9 to rotate around the transmission shaft to realize the transmission of the heater 9 in the secondary chamber 21 and the main chamber 20. The transmission shaft is arranged at the edge of the heater 9 near the connection position between the main chamber 20 and the secondary chamber 21.

[0071] The transmission shaft can drive the heater 9 to rotate around it by rotating on its own. The transmission shaft is set at the edge of the heater 9 near the connection position between the main chamber 20 and the secondary chamber 21. During the rotation process, the heater 9 can enter the main chamber 20 or the secondary chamber 21 at any time.

[0072] In this embodiment, the semiconductor process device further includes: a mounting plate 8 in contact with the mounting surface so as to fix the heater 9 on the mounting plate 8 .

[0073] The mounting plate 8 is used to fix the heater 9 .

[0074] Accordingly, in this embodiment, the transmission structure 7 passes through the chamber wall 5 at the top of the secondary chamber 21 , so that one end is fixed on the mounting plate 8 and the other end is located outside the secondary chamber 21 .

[0075] The transmission structure 7 is fixed on the mounting plate 8 , so that when the transmission structure 7 rotates, the mounting plate 8 and the heater 9 are driven to rotate together.

[0076] In this embodiment, the semiconductor process device further includes: a heater driving structure 6 , which is disposed at the other end of the transmission structure 7 and is used to drive the transmission structure 7 to transmit the heater 9 between the secondary chamber 21 and the main chamber 20 .

[0077] Specifically, the transmission shaft is a hollow structure, and the heating power supply line of the heater driving structure 6 is connected to the mounting plate 8 through the transmission shaft, and then the annular heating wire is heated.

[0078] Specifically, in this embodiment, the heater driving structure 6 is a heater motor.

[0079] In other embodiments, the transmission structure may also be used to move the heater in the longitudinal direction, so as to move the heater closer to the wafer when the heater is transmitted from the secondary chamber to the main chamber, so as to achieve heating treatment of the wafer.

[0080] In this embodiment, the semiconductor process device also includes: a target material 4 located near the top of the main chamber 20, a magnetron 2 located in the space of the main chamber 20 above the target material 4, and a magnetron motor 1 located above the main chamber 20 and connected to the magnetron 2, for performing physical vapor deposition (PVD) processing.

[0081] In this embodiment, the semiconductor process device further includes: a second lifting structure 18, which is disposed at the bottom of the main chamber 20, and the second lifting structure 18 is used to move the wafer 12 in the longitudinal direction, so as to raise the wafer 12 to realize physical vapor deposition processing, and to lower the wafer 12 to realize the transfer of the wafer 12 between the second lifting structure 18 and the supporting structure 17 (such as Figure 1 shown).

[0082] Specifically, in this embodiment, the second lifting structure 18 and the supporting structure 17 are jointly located in the area where the wafer 12 is projected at the bottom of the main chamber 20. When the second lifting structure 18 rises, it can take the wafer 12 from the supporting structure 17 and move it upward toward the physical vapor deposition equipment. After the physical vapor deposition treatment, the second lifting structure 18 descends with the wafer 12, and when passing the height of the supporting structure 17, the wafer 12 is transferred to the supporting structure 17.

[0083] In this embodiment, the second lifting structure 18 includes an electrostatic chuck (LT-ESC) 13 for carrying the wafer 12 to move the wafer 12 in the longitudinal direction.

[0084] Accordingly, in this embodiment, a plurality of ejector pins 14 are distributed around the center of the electrostatic chuck 13 and penetrate the electrostatic chuck 13 , so that the wafer 12 can be transferred between the ejector pins 14 and the electrostatic chuck 13 .

[0085] In this embodiment, the electrostatic chuck 13 is also electrically connected to a radio frequency power supply to form a radio frequency bias on the surface of the wafer 12 .

[0086] Specifically, in the main chamber 20, the target 4 is electrically connected to an excitation power supply, which is used to excite the process gas (such as argon) in the main chamber 20 to form a plasma and bombard the target 4. The target material escaping from the target 4 moves toward the surface of the wafer 12 under the action of the above-mentioned radio frequency bias, and is deposited on the surface of the wafer 12 to form a thin film. In addition, a magnetron 2 is arranged above the target 4. The main chamber 20 can be applied to the deposition of thin films such as copper (Cu), ruthenium (Ru), cobalt (Co), molybdenum (Mo), tungsten (W), rhodium (Rh), titanium (Ti), tantalum (Ta), and aluminum (Al).

[0087] Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the scope defined by the claims.

Claims

1. A semiconductor process device, It is characterized in that include: main chamber; A bearing structure, disposed in the main chamber, for bearing the wafer; A secondary chamber, connected to the main chamber through a side of the main chamber; a heater, disposed in the secondary chamber; The transmission structure is arranged in the secondary chamber and connected to the heater, and is used for transmitting the heater from the secondary chamber to the main chamber and above the bearing structure.

2. The semiconductor process device according to claim 1, It is characterized in that A side of the heater facing the bearing structure is used as a heating surface, and a temperature sensor is provided on the heating surface; The side of the heater facing away from the bearing structure is used as the installation surface, and the transmission structure is arranged on one side of the installation surface of the heater.

3. The semiconductor process device according to claim 2, It is characterized in that The temperature sensor is arranged at the center of the heater and at the edge of the heater.

4. The semiconductor process device according to claim 2, It is characterized in that The temperature sensor includes a thermocouple.

5. The semiconductor process device according to claim 2, It is characterized in that The semiconductor process device further includes: a mounting plate in contact with the mounting surface to fix the heater on the mounting plate; The transmission structure penetrates the chamber wall at the top of the secondary chamber, so that one end is fixed to the mounting plate and the other end is located outside the secondary chamber; The semiconductor process device further includes: a heater driving structure, which is disposed at the other end of the transmission structure and is used to drive the transmission structure to transmit the heater between the secondary chamber and the main chamber.

6. The semiconductor process device according to claim 1, It is characterized in that The transmission structure includes a transmission shaft rotatable around its axis, which is used to drive the heater to rotate around the transmission shaft to realize the transmission of the heater in the secondary chamber and the main chamber. The transmission shaft is arranged at the edge of the heater close to the connection position between the main chamber and the secondary chamber.

7. The semiconductor process device according to claim 1, It is characterized in that A mapping surface of the heater on the supporting structure is greater than or equal to an area of ​​the wafer.

8. The semiconductor process device according to claim 7, It is characterized in that The shape of the heater includes circle, square or polygon.

9. The semiconductor process device according to claim 1, It is characterized in that The heater includes a heating wire.

10. The semiconductor process device according to claim 1, It is characterized in that The bearing structure is a first lifting structure, which is used to move the wafer in the longitudinal direction, so as to move the wafer closer to the heater when the heater is transferred from the secondary chamber to the main chamber; or, The transmission structure is further used to move the heater in a longitudinal direction, so as to move the heater closer to the wafer when the heater is transmitted from the secondary chamber to the main chamber.

11. The semiconductor process device according to claim 1, It is characterized in that The semiconductor process device also includes: a second lifting structure, which is arranged at the bottom position of the main chamber, and the second lifting structure is used to move the wafer in the longitudinal direction, so as to raise the wafer to realize physical vapor deposition processing, and to lower the wafer to realize the transfer of the wafer between the second lifting structure and the supporting structure.

12. The semiconductor process device according to claim 11, It is characterized in that The second lifting structure includes: an electrostatic chuck for carrying the wafer to move the wafer in a longitudinal direction; The supporting structure includes: a plurality of ejector pins, which are distributed around the center of the electrostatic chuck and penetrate the electrostatic chuck, and are used for contacting the wafer to move the wafer in a longitudinal direction.

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