Small microwave plasma chemical vapor deposition device

Abstract

The invention provides a small microwave plasma chemical vapor deposition device, and relates to the field of diamond manufacturing equipment. A small microwave plasma chemical vapor deposition device comprises an equipment resonant cavity, a gas path system and a microwave system, the equipment resonant cavity is used for reacting and depositing diamond, a waveguide antenna inputs microwave energy into the resonant cavity, and a quartz ring and a resonant cavity wall enable the interior of the resonant cavity to be in a sealed state. The gas path system is used for transporting and discharging raw material gas in the reaction process, the gas is stored in the gas source bottle, the device is simple, the size is small, the electric energy consumption is low, the microwave energy utilization rate is high, meanwhile, the plasma temperature is low during low-power deposition, and extra cooling of the resonant cavity is avoided.

Description

Technical Field

[0001] The invention relates to the field of diamond manufacturing equipment, in particular to a small microwave plasma chemical vapor deposition device. Background Art

[0002] Microwave Plasma Chemical Vapor Deposition (MPCVD) is an advanced material preparation equipment, mainly used to deposit high-quality material films on substrates, such as diamond films. It generates microwaves through a microwave generator and transmits them to the reactor through a waveguide. In the reactor, microwave energy excites the reaction gas (such as a mixture of CH4 and H2) to produce glow discharge, ionizing the gas molecules to form plasma. The high-energy particles in the plasma react chemically with the reaction gas molecules, and finally deposit the required thin film material on the substrate.

[0003] However, traditional microwave plasma chemical vapor deposition equipment is complex, large in size, consumes a lot of electricity, and the microwave energy utilization rate is not ideal. At the same time, the plasma temperature is high during low-power deposition, and the resonant cavity needs additional cooling during the production process, which reduces production efficiency and is not conducive to continuous production and processing. Summary of the invention

[0004] 1. Technical issues to be resolved In view of the shortcomings of the prior art, the present invention provides a small microwave plasma chemical vapor deposition device, which solves the problems of traditional microwave plasma chemical vapor deposition devices, such as complex equipment, large size, high power consumption, and less than ideal microwave energy utilization. At the same time, the plasma temperature is high during low-power deposition, and the resonant cavity needs additional cooling during the production process, which reduces production efficiency and is not conducive to continuous production and processing.

[0005] (II) Technical solution To achieve the above objectives, the present invention is implemented through the following technical solutions: a small-scale microwave plasma chemical vapor deposition device, including a device resonant cavity, a gas path system, and a microwave system. The device resonant cavity is used for reactive deposition of diamond, wherein a waveguide antenna inputs microwave energy into the resonant cavity, and a quartz ring and a resonant cavity wall keep the resonant cavity in a sealed state. The gas path system is used for transporting and discharging raw gas during the reaction process. The gas is stored in a gas source bottle and transported to the inside of the resonant cavity through a pressure reducing valve and a flow controller. After the reaction, the residual gas is extracted from the reaction cavity through a vacuum pump. The microwave system is used to provide microwave energy. The microwave system generates microwave energy, which is transmitted along the waveguide to the waveguide antenna below the resonant cavity, and the resonant frequency in the device resonant cavity is adjusted through a short-circuit piston.

[0006] Preferably, the output frequency range of the microwave system is 915Mhz-2450Mhz.

[0007] Preferably, the resonance mode in the resonance cavity of the device is TM011, which adopts the coaxial microwave resonance mode of the smallest size.

[0008] Preferably, the resonant cavity of the device adopts an upper-opening door, that is, when the resonant cavity of the device is at atmospheric pressure, the sample can be taken and placed by opening the upper cover of the resonant cavity.

[0009] Preferably, the gas source bottle is filled with hydrogen, methane, nitrogen, oxygen and argon raw materials in proportion, wherein the proportion of hydrogen is 80%-95%, the proportion of methane is 1%-10%, and the proportion of other gases is less than 5%.

[0010] Preferably, the output pressure range of the rear end of the pressure reducing valve is 0.01-1Mpa.

[0011] Preferably, the flow controller controls the flow rate in the range of 0.1-1000sccm, and the flow controller can read the output end air pressure, and the detectable air pressure range is 0.01-10kpa.

[0012] Preferably, the vacuum pump has a pumping speed of 1-10 L / min.

[0013] Preferably, the transmitter in the microwave system is a magnetron microwave generator or a solid-state microwave generator, and the output power is 300W-2500W.

[0014] Working principle: When preparing diamond, the device places the sample on the sample base, introduces the reaction gas, turns on the microwave source, forms plasma in the resonant cavity, and deposits diamond by reaction. The invention has simple equipment, small size, low power consumption, high microwave energy utilization, and low plasma temperature during low-power deposition, avoiding additional cooling of the resonant cavity.

[0015] (III) Beneficial effects The present invention provides a small microwave plasma chemical vapor deposition device. It has the following beneficial effects: The small microwave plasma chemical vapor deposition device has simple equipment, small size, low power consumption, and high microwave energy utilization rate. At the same time, the plasma temperature is low during low-power deposition, avoiding additional cooling of the resonant cavity. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 It is a schematic diagram of the overall structure of the present invention; Figure 2 It is a schematic diagram of the structure of the resonant cavity of the device of the present invention; Among them, 1. microwave system; 2. waveguide; 3. short-circuit piston; 4. equipment resonant cavity; 41. resonant cavity upper cover; 42. resonant cavity wall; 43. resonant cavity body; 44. quartz ring; 45. waveguide antenna; 5. flow control meter; 6. gas source bottle; 7. pressure reducing valve; 8. gas path system; 9. vacuum pump; 10. vacuum pump exhaust port; 11. vacuum pump exhaust port. DETAILED DESCRIPTION

[0017] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention. Example

[0018] like Figure 1 As shown, an embodiment of the present invention provides a small-scale microwave plasma chemical vapor deposition device, including: a device resonant cavity 4, a gas path system 8, and a microwave system 1. The device resonant cavity 4 is used for reactive deposition of diamond, wherein a waveguide antenna 45 inputs microwave energy into a resonant cavity body 43, a quartz ring 44 and a resonant cavity wall 42 make the resonant cavity body 43 in a sealed state, the gas path system 8 is used for transporting and discharging raw gas during the reaction process, the gas is stored in a gas source bottle 6, and is transported to the inside of the resonant cavity through a pressure reducing valve 7 and a flow controller 5, and after the reaction, the residual gas is extracted from the reaction cavity through a vacuum pump 9, and the microwave system 1 is used for providing microwave energy, the microwave system 1 generates microwave energy, and transmits it along a waveguide 2 to the waveguide antenna 45 below the resonant cavity, and adjusts the resonant frequency in the device resonant cavity 4 through a short-circuit piston 3.

[0019] The output frequency range of the microwave system 1 is 915Mhz-2450Mhz; the resonance mode of the device resonant cavity 4 is TM011, and the smallest coaxial microwave resonance mode is adopted; the device resonant cavity 4 adopts an upper door opening method, that is, when the device resonant cavity 4 is at atmospheric pressure, the sample can be taken and placed by opening the resonant cavity upper cover 41; the gas source bottle 6 is filled with hydrogen, methane, nitrogen, oxygen, and argon raw gas in proportion, wherein the proportion of hydrogen is 80%-95%, the proportion of methane is 1%-10%, and the proportion of other gases is less than 5%; the output pressure range of the rear end of the pressure reducing valve 7 is 0.01-1Mpa; the flow control meter 5 controls the flow range of 0.1-1000sccm, the flow control meter 5 can read the output end pressure, and the detectable pressure range is 0.01-10kpa; the vacuum pump 9 has a pumping speed of 1-10L / min; the transmitter in the microwave system 1 is a magnetron microwave generator or a solid-state microwave generator, and the output power is 300W-2500W.

[0020] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A small microwave plasma chemical vapor deposition device, comprising: The device resonant cavity (4), gas path system (8), and microwave system (1) are characterized in that the device resonant cavity (4) is used for reactive deposition of diamond, wherein a waveguide antenna (45) inputs microwave energy into the resonant cavity (43), a quartz ring (44) and a resonant cavity wall (42) keep the resonant cavity (43) in a sealed state, the gas path system (8) is used for transporting and discharging raw gas during the reaction process, the gas is stored in a gas source bottle (6), and is transported to the inside of the resonant cavity through a pressure reducing valve (7) and a flow controller (5), and the residual gas after the reaction is extracted from the reaction cavity through a vacuum pump (9), and the microwave system (1) is used for providing microwave energy, the microwave system (1) generates microwave energy, transmits it along the waveguide (2) to the waveguide antenna (45) below the resonant cavity, and adjusts the resonant frequency in the device resonant cavity (4) through a short-circuit piston (3).

2. A small microwave plasma chemical vapor deposition device according to claim 1, characterized in that: The output frequency range of the microwave system (1) is 915Mhz-2450Mhz.

3. A small microwave plasma chemical vapor deposition device according to claim 1, characterized in that: The resonance mode (4) in the resonance cavity of the device is TM011, which adopts the coaxial microwave resonance mode of the smallest size.

4. The small-scale microwave plasma chemical vapor deposition device according to claim 1, characterized in that: The device resonant cavity (4) adopts an upper-opening door mode, that is, when the device resonant cavity (4) is at atmospheric pressure, the sample can be taken and placed by opening the resonant cavity upper cover (41).

5. The small-scale microwave plasma chemical vapor deposition device according to claim 1, characterized in that: The gas source bottle (6) is filled with hydrogen, methane, nitrogen, oxygen, and argon raw materials in proportion, wherein the proportion of hydrogen is 80%-95%, the proportion of methane is 1%-10%, and the proportion of the remaining gases is less than 5%.

6. The small-scale microwave plasma chemical vapor deposition device according to claim 1, characterized in that: The output pressure range of the rear end of the pressure reducing valve (7) is 0.01-1 MPa.

7. The small-scale microwave plasma chemical vapor deposition device according to claim 1, characterized in that: The flow controller (5) controls the flow rate in a range of 0.1-1000 sccm. The flow controller (5) can read the output end air pressure, and the detectable air pressure range is 0.01-10 kPa.

8. The small-scale microwave plasma chemical vapor deposition device according to claim 1, characterized in that: The vacuum pump (9) has a pumping speed of 1-10 L / min.

9. The small-scale microwave plasma chemical vapor deposition device according to claim 1, characterized in that: The transmitter in the microwave system (1) is a magnetron microwave generator or a solid-state microwave generator, and the output power is 300W-2500W.

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