Superconducting copper piece and preparation method thereof

Abstract

The invention provides a superconducting copper piece and a preparation method thereof, and the method comprises the steps: placing a copper piece in a heating furnace, heating the copper piece under normal pressure until the surface of the copper piece is oxidized, and keeping the shape of the copper piece consistent before and after heating; the treated copper piece is placed in a tubular furnace reaction cavity, graphene grows on the surface of the copper piece through a chemical vapor deposition method, and the superconducting copper piece is obtained; wherein a carbon source used for graphene growth is a solid carbon source. According to the method, a low-temperature chemical vapor deposition method is utilized, in-situ chemical reaction is carried out on the surface of the copper piece on the premise that the morphology of the copper piece is not changed, and a 5-10 nm high-quality graphene coating is deposited. The ultrathin graphene coating is transparent in appearance, and the conductivity of the copper piece can be remarkably improved, so that the copper piece containing the graphene coating has lower impedance, higher strength and longer service life compared with an original copper piece in a large-current working scene.

Description

Technical Field

[0001] The present application relates to the technical field of copper processing and manufacturing, and in particular to a superconducting copper part and a preparation method thereof. Background Art

[0002] Copper has the advantages of good ductility, conductivity and low cost, and is widely used in the fields of electricity, machinery manufacturing, construction, etc.

[0003] With the vigorous development of the new energy industry, more and more application scenarios have put forward higher requirements for conductor resistance and working life under high current. Copper and silver are key conductor materials in the field of power electronics. Among them, silver has a small reserve in nature and a high price, which is not suitable for large-scale application; while copper has a large reserve in nature and a low price, but copper is easily oxidized, has a large resistance at high temperatures, and is easily ablated in high current scenarios. Graphene has excellent electrical conductivity and chemical stability, strong corrosion resistance, and can extinguish arcs when large currents are turned on and off. It is an ideal conductor material. In order to reduce the resistance of copper, the method of growing graphene on the copper surface is used to achieve the combination of copper parts and graphene, thereby improving the stability and conductivity of copper.

[0004] In the existing methods for growing graphene on the surface of copper parts, the pre-treatment of copper parts usually includes mechanical polishing, chemical polishing, electrochemical polishing, hydrogen annealing, etc., but all of them are easy to change the morphology of copper parts, and organic impurities on the copper surface are usually ignored; at the same time, the existing technology uses gaseous carbon sources such as methane and acetylene. Gaseous carbon sources require a relatively high cracking temperature, generally maintained above 1000°C, close to the melting point of copper, and are easy to change the shape of copper parts. At a temperature below 800°C, the cracking temperature of methane and other gases as carbon sources is not enough, which may affect the conductive properties of graphene / copper parts grown on copper parts. Summary of the invention

[0005] In view of one or more of the above problems, the first aspect of the present application provides a method for preparing a superconducting copper part, comprising:

[0006] Placing the copper piece in a heating furnace and heating it under normal pressure until the surface of the copper piece is oxidized, and the shape of the copper piece remains the same before and after heating;

[0007] Placing the treated copper piece in a tube furnace reaction chamber, and growing graphene on the surface of the copper piece by chemical vapor deposition to obtain a superconducting copper piece;

[0008] Among them, the carbon source used for graphene growth is a solid carbon source.

[0009] In some embodiments of the present application, the solid carbon source is an aromatic compound, and the aromatic compound includes at least one of naphthalene, anthracene, phenanthrene, aniline, phenylenediamine, benzidine, diazonium, quinoline, and o-phenanthroline.

[0010] In some embodiments of the present application, the solid carbon source can be converted from a liquid carbon source, specifically including:

[0011] Using a solid carrier to adsorb the liquid carbon source to obtain the solid carbon source, wherein the mass percentage of the liquid carbon source in the solid carbon source is 1 to 10 wt %;

[0012] In some embodiments of the present application, the solid carrier includes at least one of activated carbon and graphene, and the liquid carbon source includes at least one of aniline, benzene, toluene, xylene, pyrrole, nitrobenzene, phenylacetonitrile, and bipyridine.

[0013] In some embodiments of the present application, the heating furnace is specifically an oven, and a filter is installed on the oven to reduce the content of impurities in the oven.

[0014] In some embodiments of the present application, the reaction temperature of the graphene growth is: 250-600°C, the preferred reaction temperature is: 300-500°C, and the optimal reaction temperature is: 400°C.

[0015] In some embodiments of the present application, the reaction time of graphene growth is: 10 to 600 min, the preferred reaction time is: 60 to 180 min, and the optimal reaction time is: 60 min.

[0016] In some embodiments of the present application, the solid carbon source is brought in by a protective gas introduced into the reaction chamber of the tubular furnace, and the protective gas is a mixture of at least one of nitrogen or argon and hydrogen;

[0017] Preferably, the temperature of the solid carbon source is 40°C;

[0018] Preferably, the ratio of hydrogen to the mixed gas is 1% to 100%, the preferred ratio is 3% to 10%, and the best ratio is 5%;

[0019] Preferably, the gas flow rate of the protective gas is 5-500 sccm, the preferred gas flow rate is 100-200 sccm, and the optimal gas flow rate is 200 sccm.

[0020] In some embodiments of the present application, the copper part is a part or product made of copper and having a certain shape and specification.

[0021] The second aspect of the present invention provides a superconducting copper piece prepared by the above method, the superconducting copper piece has the same morphology as the original copper piece, and the color is consistent with the color of freshly reduced pure copper;

[0022] The graphene thickness on the surface of the superconducting copper piece is 5 to 10 nm, and the Raman spectrum of the superconducting copper piece is 1575 cm -1 and 2117cm -1 The strength ratio is greater than 0.8, and the conductivity of the superconducting copper part is greater than 102% IACS.

[0023] Compared with the prior art, the present invention has the following beneficial effects:

[0024] The method for preparing a superconducting copper piece of the present invention directly places the copper piece in an oven to oxidize the surface of the copper piece to a light red color, and removes organic impurities on the surface of the copper piece by high temperature. The previous treatment method cleans the surface of the copper piece without changing the morphology of the copper piece, so that no molecules are attached to the surface of the copper piece, thereby ensuring the cleanliness of the surface of the copper piece, thereby improving the growth quality of graphene on the surface of the copper piece;

[0025] The present invention uses aromatic compounds as solid carbon sources to effectively reduce the growth temperature of graphene to as low as 400°C, thereby reducing production costs;

[0026] The method described in the present invention can carry out in-situ chemical reaction on the surface of the copper part without changing the morphology of the copper part, which can significantly improve the conductivity and antioxidant ability of the copper part, so that the copper part containing the graphene coating can show lower impedance, higher strength and longer working life than the original copper part in a high current working scenario. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] The accompanying drawings are used to provide a further understanding of the present invention and constitute a part of the specification. Together with the embodiments of the present invention, they are used to explain the present invention and do not constitute a limitation of the present invention. In the accompanying drawings:

[0028] Figure 1 It is a logic flow chart of a method for preparing a graphene copper-clad part according to an embodiment of the present invention;

[0029] Figure 2 is the Raman spectrum of graphene on the copper piece prepared in Example 1 of the present invention;

[0030] Figure 3 is a comparison diagram of an original copper piece and a superconducting copper piece prepared according to an embodiment of the present invention;

[0031] Figure 4 This is a TEM image of a graphene copper piece prepared in one embodiment of the present invention. DETAILED DESCRIPTION

[0032] In order to facilitate the understanding of the present invention, the present invention will be described more fully below. Preferred embodiments of the present invention are given below. However, the present invention can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the understanding of the disclosure of the present invention more thorough and comprehensive.

[0033] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art of the present invention. The terms used in the specification of the present invention herein are only for the purpose of describing specific embodiments and are not intended to limit the present invention.

[0034] This article relates to numerical intervals. If not otherwise specified, the above numerical intervals are deemed to be continuous and include the minimum and maximum values ​​of the range, as well as each value between such minimum and maximum values. Within the range allowed by the error before and after the interval range, they all fall within the protection scope of the present application. Further, when the range refers to an integer, each integer between the minimum and maximum values ​​of the range is included. In addition, when multiple ranges are provided to describe features or characteristics, the ranges can be merged. In other words, unless otherwise specified, all ranges disclosed herein should be understood to include any and all sub-ranges included therein.

[0035] The temperature parameters herein, if not specifically limited, allow for both constant temperature treatment and treatment within a certain temperature range. The constant temperature treatment allows for temperature fluctuations within the precision range of instrument control.

[0036] The technical solution of the present invention is further described below with reference to the accompanying drawings and through specific implementation methods.

[0037] Figure 1 is a logic flow chart of the method for preparing the superconducting copper piece of the present invention, such as Figure 1 As shown, the present invention provides a method for preparing a superconducting copper part. In a specific embodiment of the present invention, the method comprises:

[0038] S1. placing the copper piece in a heating furnace, introducing air or other oxidizing atmosphere into the heating furnace, and heating until the surface of the copper piece is oxidized to light red, and the shape of the copper piece remains the same before and after heating;

[0039] S2. Placing the treated copper piece in a tubular furnace reaction chamber, and growing graphene on the surface of the copper piece by chemical vapor deposition to obtain a superconducting copper piece; wherein the carbon source used for the growth of graphene is a solid carbon source.

[0040] Since the surface of copper parts usually has additives such as antioxidants and surfactants, or the surface of copper parts adsorbs pollutants such as organic matter and dust in the air, by cleaning the surface of copper parts, no molecules are attached to the surface of copper parts, and the surface of copper parts is kept clean, thereby improving the growth quality of graphene on the surface of copper parts.

[0041] In some embodiments of the present invention, the copper piece is placed in a clean heating furnace and heated at 100 to 400°C for 1 to 180 minutes. In some specific examples, the heating temperature may be 100°C, 200°C, 300°C, 400°C, etc., and the heating treatment time may be 1 minute, 10 minutes, 100 minutes, 180 minutes, etc. Preferably, the heating treatment time is 5 to 60 minutes. By heating treatment, organic impurities attached to the surface of the copper piece are removed, making the copper appear light red. The shorter the heating treatment time and the lower the temperature, the slower the removal of organic matter; but at the same time, excessive temperature and time will cause the copper element to oxidize to red cuprous oxide or even black cupric oxide in air or oxygen. Depending on the degree of oxidation and the thickness of the oxide layer, the surface of the copper piece may appear red, purple, yellow, gray, black, etc.

[0042] Preferably, the copper piece is placed in a clean heating furnace and heated at 300° C. for 5 minutes. The heating furnace may be a common oven or other machines that can be used for heating.

[0043] Preferably, a fine filter is provided on the heating furnace to reduce the content of impurities such as dust in the heating furnace.

[0044] In some embodiments of the present invention, air or other oxidizing atmosphere is introduced into the heating furnace during the heating process to remove organic impurities on the copper surface by oxidation.

[0045] In some embodiments of the present invention, the copper parts are parts or products made of copper with a certain shape and specification, including but not limited to plug-in parts, connectors, guillotines and other parts. Through this method, a thin layer of graphene is grown and attached on the surface of these parts without changing the morphology of these parts, so that these parts can still be used for their original purposes, but the conductive properties of the copper parts can be significantly improved, reflecting lower impedance, higher strength and longer service life than the original copper parts.

[0046] In some embodiments of the present invention, the solid carbon source is an aromatic compound, specifically including one or a combination of naphthalene, anthracene, phenanthrene, aniline, phenylenediamine, benzidine, diazonium, quinoline, and o-phenanthroline.

[0047] By using aromatic compounds as solid carbon sources, the growth temperature of graphene is effectively reduced to as low as 400°C, further reducing production costs.

[0048] In some embodiments of the present invention, the solid carbon source can be converted from a liquid carbon source, specifically including:

[0049] A solid carrier is used to adsorb the liquid carbon source, and the mass percentage of the liquid carbon source in the solid carbon source is 1 to 10wt%. If the ratio is lower than 1wt%, the carbon source adsorbed by the solid carrier may be insufficient, which may limit the growth of graphene, resulting in insufficient coverage of the graphene layer, affecting its electrical conductivity and antioxidant capacity; if the ratio is higher than 10wt%, the solid carrier may not be able to completely adsorb all of the liquid carbon source, which may cause the unabsorbed liquid carbon source to form by-products during the reaction, affecting the purity and quality of the graphene.

[0050] The solid carrier includes at least one of activated carbon and graphene, and the liquid carbon source is an aromatic compound, specifically including one or a combination of benzene, toluene, xylene, pyrrole, nitrobenzene, phenylacetonitrile and bipyridine.

[0051] In some embodiments of the present invention, the reaction temperature of the solid carbon source and the copper part is: 250-600°C, the preferred temperature is: 300-500°C, and the optimal temperature is: 400°C. The reaction cannot occur at a reaction temperature lower than 250°C, and the copper part may be deformed if it is higher than 600°C. The solid carbon source and the copper part can react within the temperature range of 250-600°C, that is, the solid carbon source can grow on the copper part, and within this temperature range, the copper part will not agglomerate and bond. In some specific examples, the reaction temperature of the solid carbon source and the copper part can be 250°C, 300°C, 400°C, 500°C, 600°C, etc.

[0052] In some embodiments of the present invention, the reaction time of the solid carbon source and the copper piece is 10 to 600 minutes, preferably 60 to 180 minutes, and the best time is 60 minutes. If the reaction time is less than 10 minutes, a complete graphene layer may not be formed on the surface of the copper piece, affecting its conductivity and anti-oxidation performance; prolonged reaction time will increase energy consumption and increase production costs.

[0053] The solid carbon source and the copper piece react for 60 minutes to grow a superconducting copper piece with the best quality. In some specific examples, the reaction time of the solid carbon source and the copper piece is 10 minutes, 100 minutes, 200 minutes, 400 minutes, 600 minutes, etc.

[0054] In some embodiments of the present invention, a solid carbon source at 0 to 100°C is brought into a tubular furnace reaction chamber by a protective gas to grow graphene. Too low a temperature may slow down the growth rate of graphene, resulting in insufficient or uneven growth; too high a temperature may cause thermal decomposition of the solid carbon source, produce byproducts, and affect the purity and quality of graphene.

[0055] The protective gas is a mixture of nitrogen or argon and hydrogen, and the volume ratio of the hydrogen in the mixed gas is 1% to 100%, the preferred ratio is 3%-10%, and the optimal ratio is 5%. The gas flow rate of the protective gas is 5 to 500 sccm, the preferred gas flow rate is 100 to 200 sccm, and the optimal gas flow rate is 200 sccm. A small amount of hydrogen is introduced during the reaction of growing graphene to reduce the oxides generated on the surface of the copper part during the pretreatment process. Since the diffusion rate of hydrogen is very fast, the reduction reaction takes precedence over the reaction of generating graphene and will not interfere with the growth of graphene. The proportion of hydrogen in the mixed gas is less than 1%, which makes its reduction ability insufficient. If the proportion is too high, it increases the danger and interferes with the reaction of generating graphene. The gas flow rate of the protective gas is less than 5 sccm, which may cause the solid carbon source to be unable to be effectively transmitted to the reaction chamber, affecting the growth of graphene; the gas flow rate of the protective gas is higher than 500 sccm, which may cause a large load on the furnace body and the conveying system, shorten the equipment life, cause gas waste, and increase production costs.

[0056] In some specific examples, the temperature of the solid carbon source is 0°C, 10°C, 20°C, 30°C, 40°C, 50°C, 60°C, 70°C, 80°C, 90°C, 100°C, etc., preferably 40°C; in some specific examples, the proportion of hydrogen in the mixed gas can be 1%, 50%, 100%, etc.; in some specific examples, the gas flow rate of the protective gas can be 5sccm, 50sccm, 500sccm, etc.

[0057] In some embodiments of the present invention, the protective gas includes: an inert gas and hydrogen, and the inert gas includes at least one of argon and nitrogen, that is, the inert gas is all argon, or all nitrogen, or argon and nitrogen are composed of each other. The embodiments of the present invention do not specifically limit the ratio of argon and nitrogen.

[0058] A second aspect of the present invention provides a superconducting copper part, wherein the superconducting copper part is prepared by the above method. Figure 3 This is a comparison of the original copper and the superconducting copper. The left side is the original copper and the right side is the copper after growth. Figure 3 It can be seen that the superconducting copper piece has the same morphology as the original copper piece, and its color is consistent with the color of freshly reduced pure copper.

[0059] It should be clear that the use of the process provided by the embodiment of the present invention or the replacement or change of conventional data falls within the protection scope and disclosure scope of the present invention.

[0060] The present application is described below through specific embodiments.

[0061] Example 1

[0062] (1) Clean the surface of the copper parts;

[0063] The copper piece is placed in an oven, and then heated at room temperature and pressure. Finally, the heating temperature of the oven is controlled at 300°C and heated for 5 minutes to volatilize the attachments on the surface of the copper piece.

[0064] (2) Adding copper parts into a tube furnace;

[0065] The copper pieces with cleaned surfaces are added to the inlet of the tube furnace, and are transported into the reaction chamber by the transport mechanism of the tube furnace.

[0066] (3) introducing a solid carbon source into the tubular furnace through a protective gas;

[0067] 100 mg of o-phenanthroline was heated to 100° C. and introduced into a tube furnace through a protective gas having a flow rate of 200 sccm and a ratio of hydrogen to inert gas of 5:95.

[0068] (4) controlling the solid carbon source to grow at low temperature on the surface of the copper piece to obtain a graphene / copper piece body material;

[0069] The growth temperature was controlled to be 400° C. and the reaction time was 60 min, thereby obtaining a superconducting copper piece 1 .

[0070] Example 2

[0071] (1) Clean the surface of the copper parts;

[0072] The copper piece is placed in an oven, and then heated at room temperature and pressure. Finally, the heating temperature of the oven is controlled at 300°C and heated for 5 minutes to volatilize the attachments on the surface of the copper piece.

[0073] (2) Adding copper parts into a tube furnace;

[0074] The copper pieces with cleaned surfaces are added to the inlet of the tube furnace, and are transported into the reaction chamber by the transport mechanism of the tube furnace.

[0075] (3) introducing a solid carbon source into the tubular furnace through a protective gas;

[0076] 100 mg of o-phenanthroline was heated to 40° C. and introduced into a tube furnace through a protective gas having a flow rate of 100 sccm and a ratio of hydrogen to inert gas of 5:95.

[0077] (4) controlling the solid carbon source to grow at low temperature on the surface of the copper piece to obtain a graphene / copper piece body material;

[0078] The growth temperature was controlled to be 250° C. and the reaction time was 60 min, thereby obtaining a superconducting copper piece 2 .

[0079] Example 3

[0080] (1) Clean the surface of the copper parts;

[0081] The copper piece is placed in an oven, and then heated at room temperature and pressure. The heating temperature of the oven is controlled at 300°C and heated for 180 minutes to volatilize the attachments on the surface of the copper piece.

[0082] (2) Adding copper parts into a tube furnace;

[0083] The copper pieces with cleaned surfaces are added to the inlet of the tube furnace, and are transported into the reaction chamber by the transport mechanism of the tube furnace.

[0084] (3) introducing a solid carbon source into the tubular furnace through a protective gas;

[0085] 100 mg of o-phenanthroline was controlled at 40° C. and introduced into a tubular furnace through a protective gas having a flow rate of 100 sccm and a ratio of hydrogen to inert gas of 5:95.

[0086] (4) controlling the solid carbon source to grow at low temperature on the surface of the copper piece to obtain a graphene / copper piece body material;

[0087] The growth temperature of the solid carbon source and the copper piece was controlled to be 400° C. and the reaction time was 600 min, thereby obtaining a superconducting copper piece 3 .

[0088] Example 4

[0089] (1) Clean the surface of the copper parts;

[0090] The copper piece is placed in an oven, and then heated at room temperature and pressure. The heating temperature of the oven is controlled at 300°C and heated for 5 minutes to volatilize the attachment on the surface of the copper piece.

[0091] (2) Adding copper parts into a tube furnace;

[0092] The copper pieces with cleaned surfaces are added to the inlet of the tube furnace, and are transported into the reaction chamber by the transport mechanism of the tube furnace.

[0093] (3) introducing a solid carbon source into the tubular furnace through a protective gas;

[0094] 100 mg of o-phenanthroline was controlled at 40° C. and introduced into a tubular furnace through a protective gas having a flow rate of 100 sccm and a ratio of hydrogen to inert gas of 5:95.

[0095] (4) controlling the solid carbon source to grow at low temperature on the surface of the copper piece to obtain a graphene / copper piece body material;

[0096] The growth temperature of the solid carbon source and the copper piece is controlled to be 400° C., and the reaction time is 60 min, thereby obtaining a superconducting copper piece 4 .

[0097] Comparative Example 1

[0098] (1) Clean the surface of the copper parts;

[0099] The copper piece was placed in an oven, and then heated at room temperature and pressure. Finally, the heating temperature of the oven was controlled at 400°C and heated for 5 minutes.

[0100] (2) Adding copper parts into a tube furnace;

[0101] The copper pieces with cleaned surfaces are added to the inlet of the tube furnace, and are transported into the reaction chamber by the transport mechanism of the tube furnace.

[0102] (3) introducing a solid carbon source into the tubular furnace through a protective gas;

[0103] 100 mg of o-phenanthroline was controlled at room temperature of 20° C. and introduced into a tubular furnace through a protective gas having a flow rate of 100 sccm and a ratio of hydrogen to inert gas of 5:95.

[0104] (4) controlling the solid carbon source to grow at low temperature on the surface of the copper piece to obtain a graphene / copper piece body material;

[0105] The growth temperature was controlled to be 600° C. and the reaction time was 60 min, thereby obtaining a superconducting copper piece 5 .

[0106] The properties of the superconducting copper pieces 1-4 obtained in Examples 1-4 and the superconducting copper piece 5 obtained in Comparative Example 1 are shown in the following table:

[0107] Table 1 Performance parameters of superconducting copper parts of Examples 1-2

[0108] sample Raman 1575 / 2117 Conductivity / %ICAS Antioxidant time / s Superconducting copper parts 1 1.312 102.23 11-14 Superconducting copper parts 2 1.208 101.45 8-11 Superconducting copper parts 3 1.351 102.31 12-15 Superconducting copper parts 4 1.245 102.18 10-13 Superconducting copper parts 5 1.109 100.94 6-9

[0109] The conductivity of Comparative Example 1 was significantly reduced at room temperature without heating with a solid carbon source.

[0110] As can be seen from Table 1, the method of the present invention can pre-treat the copper part without changing the morphology of the copper part, and perform an in-situ chemical reaction on its surface, the Raman 1575 / 2117 ratio is improved, the surface graphene quality is enhanced, and the electrical conductivity and antioxidant ability of the copper part are significantly improved, so that the copper part containing the graphene coating exhibits lower impedance, higher strength and longer working life than the original copper part in a high current working scenario.

[0111] Figure 3 is a comparison diagram of an original copper piece and a superconducting copper piece prepared according to an embodiment of the present invention. Figure 3 The upper middle part is the original copper piece, and the lower part is the superconducting copper piece prepared in one embodiment of the present invention. Figure 4 This is a TEM image of a graphene copper piece prepared in one embodiment of the present invention. It can be seen that the graphene on the surface of the superconducting copper piece is transparent in appearance and has a thickness of 5 to 10 nm. The Raman spectrum of the superconducting copper piece is at 1575 cm -1 and 2117cm -1 The strength ratio is greater than 0.8, and the conductivity of the superconducting copper part is greater than 102% IACS.

[0112] It should be noted that the technical solutions in various embodiments of the present invention can be combined with each other, but the basis for the mutual combination is that it can be implemented by ordinary technicians in the field; when the combination of technical solutions is mutually contradictory or cannot be implemented, it should be deemed that such combination of technical solutions does not exist, that is, it does not belong to the protection scope of the present invention.

[0113] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A method for preparing a superconducting copper part, characterized in that: include: Placing the copper piece in a heating furnace and heating it under normal pressure until the surface of the copper piece is oxidized, and the shape of the copper piece remains the same before and after heating; Placing the treated copper piece in a tube furnace reaction chamber, and growing graphene on the surface of the copper piece by chemical vapor deposition to obtain a superconducting copper piece; Among them, the carbon source used for graphene growth is a solid carbon source.

2. The method for preparing a superconducting copper part according to claim 1, characterized in that: The solid carbon source is an aromatic compound, and the aromatic compound includes at least one of naphthalene, anthracene, phenanthrene, aniline, phenylenediamine, benzidine, diazonium, quinoline, and o-phenanthroline.

3. The method for preparing a superconducting copper part according to claim 1, characterized in that: The solid carbon source can be obtained by converting a liquid carbon source, and specifically includes: The solid carbon source is obtained by adsorbing the liquid carbon source using a solid carrier, and the mass percentage of the liquid carbon source in the solid carbon source is 1 to 10 wt %.

4. The method for preparing a superconducting copper part according to claim 3, characterized in that: The solid carrier includes at least one of activated carbon and graphene, and the liquid carbon source includes at least one of aniline, benzene, toluene, xylene, pyrrole, nitrobenzene, benzyl cyanide and bipyridine.

5. The method for preparing a superconducting copper part according to claim 1, characterized in that: The heating furnace is specifically an oven, and a filter is provided on the oven to reduce the content of impurities in the oven.

6. The method for preparing a superconducting copper part according to claim 1, characterized in that: The reaction temperature of the graphene growth is 250-600°C, preferably 300-500°C, and the best reaction temperature is 400°C.

7. The method for preparing a superconducting copper part according to claim 1, characterized in that: The reaction time of the graphene growth is 10 to 600 min, preferably 60 to 180 min, and the best reaction time is 60 min.

8. The method for preparing a superconducting copper part according to claim 1, characterized in that: The solid carbon source is brought in by the protective gas introduced into the reaction chamber of the tubular furnace, and the protective gas is a mixture of at least one of nitrogen or argon and hydrogen; Preferably, the temperature of the solid carbon source is 40°C; Preferably, the volume ratio of hydrogen to the mixed gas is 1% to 100%, the preferred ratio is 3% to 10%, and the optimal ratio is 5%; Preferably, the gas flow rate of the protective gas is 5-500 sccm, the preferred gas flow rate is 100-200 sccm, and the optimal gas flow rate is 200 sccm.

9. The method for preparing a superconducting copper part according to claim 1, characterized in that: The copper parts are parts or products made of copper with certain shapes and specifications.

10. A superconducting copper part, characterized in that: The superconducting copper piece is prepared by the method according to any one of claims 1 to 9, and the superconducting copper piece has the same shape as the original copper piece and a brighter color; The graphene thickness on the surface of the superconducting copper piece is 5 to 10 nm, and the Raman spectrum of the superconducting copper piece is 1575 cm -1 and 2117cm -1 The strength ratio is greater than 0.8, and the conductivity of the superconducting copper part is greater than 102% IACS.

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