Method for cleaning silica gel adsorption film of multi-region semiconductor wafer

Abstract

The invention provides a cleaning method for a silica gel adsorption film of a multi-zone semiconductor wafer, which comprises the following steps of: (1) after the silica gel adsorption film of the multi-zone semiconductor wafer is eluted, wiping and cleaning the back surface and the radial position of the silica gel adsorption film of the multi-zone semiconductor wafer; (2) wiping and cleaning the working surface of the silica gel adsorption film of the multi-region semiconductor wafer in the Archimedes parabola direction; and (3) carrying out first scrubbing, heating ultrasonic cleaning and second scrubbing on the multi-zone semiconductor wafer silica gel adsorption film in sequence to complete cleaning of the multi-zone semiconductor wafer silica gel adsorption film. According to the cleaning method, attachments such as particles and fibers adsorbed on the surface of the silica gel adsorption film can be effectively removed, the cleaning efficiency and quality of the multi-zone semiconductor wafer silica gel adsorption film can be improved, and the cleaning method is suitable for being widely popularized as a standardized cleaning step of the multi-zone semiconductor wafer silica gel adsorption film.

Description

Technical Field

[0001] The invention relates to the technical field of material cleaning, and in particular to a method for cleaning a multi-zone semiconductor wafer silica gel adsorption film. Background Art

[0002] With the continuous advancement of integrated circuit chip process technology, the demand for multi-zone semiconductor wafer silicone adsorption film technology continues to increase. Multi-zone semiconductor wafer silicone adsorption film technology was first used in silicon oxide polishing. It is used for the adsorption of global planarization of interlayer dielectrics (ILD). After the integrated circuit chip entered the 0.35μm node, the multi-zone semiconductor wafer silicone adsorption film technology was more widely used in the planarization process of metal tungsten, copper, polysilicon, etc. With the increase in the number of metal wiring layers, more steps are required for multi-zone semiconductor wafer silicone adsorption film polishing. Taking the 28nm node process as an example, the number of multi-zone semiconductor wafer silicone adsorption film polishing required is 12 to 13 times, so the multi-zone semiconductor wafer silicone adsorption film is needed to press and absorb the wafer, release the pressure to release the wafer, keep the wafer from moving, and avoid the wafer being scrapped by the slide. After entering the 10nm node, the number of multi-zone semiconductor wafer silicone adsorption film polishing doubled to 25 to 26 times. According to statistics, multi-zone semiconductor wafer silicone adsorption film polishing is widely used in the first half of the single crystal silicon wafer manufacturing process in the following links: uneven insulators, conductors, interlayer dielectrics (ILDs), embedded metals (such as Al, Cu), shallow trench isolation (STI), silicon oxide, polysilicon, etc. in the interconnect structure.

[0003] The wafer needs to be flattened after sputtering, and it needs to be flattened after each sputtering. During the flattening process, the multi-zone semiconductor wafer adsorption film acts to pressurize and absorb the wafer for chemical mechanical polishing and flattening treatment, and releases the wafer when the pressure is released. When entering 10nm or 7nm, the sputtering level needs to be sputtered many times, so the wafer needs the same number of flattening treatments. The higher the requirements for the use of the multi-zone semiconductor wafer adsorption film, the more clean and free of impurities and contamination the multi-zone semiconductor wafer adsorption film must be.

[0004] The multi-zone semiconductor wafer silicone adsorption film itself has the advantages of high adsorption performance, good thermal stability, stable chemical properties, and high mechanical strength. However, the bottom and back diameters of the multi-zone semiconductor wafer silicone adsorption film products are very easy to adsorb particles, impurities, and fiber impurities, mainly including: ① After the vulcanization process, it is easy to adsorb the burrs and micro particles under the trimming, fiber filaments in the environment, dust and other impurities; ② When exposed to the air during size detection and detection, it will adsorb particles, fibers, hair and other impurities; ③ When exposed to the air during laser engraving, it will adsorb impurities such as powder impurities and particles left over from the burning produced by laser engraving.

[0005] CN105855212A discloses a cleaning method for a silica gel polymer material, comprising the following steps: spraying a wear-resistant layer on the surface of the product by spraying; placing the product sprayed with the wear-resistant layer in a steam environment, the steam temperature is 100 degrees Celsius and it is water, and leaving it for 5-10 minutes; placing it in a cleaning machine, the cleaning machine is provided with 4 water outlets, each water outlet has a water flow diameter of 0.5cm, and the flow rate of water to the product sprayed with the wear-resistant layer is 2cm3 / s, the product sprayed with the wear-resistant layer is located in the center of the 4 water outlets, and the product sprayed with the wear-resistant layer is used as a fulcrum for lever movement; cleaning for 20-30 minutes; the water outlet is connected to a cleaning agent barrel, and the cleaning agent is a mixture of SDS, acetone and water. The above-mentioned cleaning method is adopted, placed in a steam environment to loosen impurities, and then cleaned through the 4 water outlets, and the product is made to move with a lever to improve the cleaning efficiency.

[0006] CN102530971A discloses a method for washing fluorine-containing silica gel, which is as follows: a. Put the silica gel to be washed into an ultrasonic cleaning machine with stirring and heating, and add washing water; b. After adding dilute ammonia water, start stirring, start ultrasonic wave, and wash for 5-60 minutes; after filtering the material, the filter cake is washed for the second time; c. Put the filter cake washed in step b into an ultrasonic cleaning machine with stirring and heating, and add washing water; d. After adding washing water, start stirring, start heating and start ultrasonic wave washing for 5-60 minutes; e. After filtering the material in step d, the filter cake is washed for the second time, and the filtrate is repeatedly used. The fluorine-containing silica gel is washed by ultrasonic cleaning, so that the dry silicon dioxide content of the fluorine-containing silica gel is greatly increased from the original 60%, and the impurity content is reduced from the original 15% to less than 0.1%.

[0007] CN106220877A discloses a cleaning method for a silica gel sheet, comprising the following steps: (1) soaking the silica gel sheet in distilled water for 10 minutes, then adding ethyl acetate and heating to evaporate the ethyl acetate; (2) taking out the silica gel sheet and cooling it at 4-10 degrees Celsius; (3) spraying the surface of the silica gel sheet with a spray faucet and drying it; (4) spraying an insulating coating on the surface of the silica gel sheet after drying, and cooling and curing it at 4-10 degrees Celsius. Step (1) removes the oil stains on the surface of the silica gel sheet, step (2) resets the expanded silica gel sheet, step (3) further clears it, and step (4) increases the insulation and resets the dried expanded silica gel sheet.

[0008] However, the above silica gel cleaning method is complicated to operate and cannot effectively clean the impurities inside each zone of the silica gel adsorption film of the multi-zone semiconductor wafer.

[0009] Therefore, it is of great significance to develop a cleaning method suitable for silica gel adsorption films on multi-zone semiconductor wafers. Summary of the invention

[0010] In order to solve the above technical problems, the present invention provides a cleaning method for a multi-zone semiconductor wafer silica gel adsorption film. According to the material characteristics of the silica gel adsorption film, the microparticles adsorbed on the surface of the silica gel adsorption film, black matter in the air, fiber and other impurities attached thereto are effectively removed through steps such as rinsing, wiping cleaning and heated ultrasonic cleaning. The operation method is suitable for standardized operation in the batch product industry, which is beneficial to improving the cleaning efficiency and quality of the multi-zone semiconductor wafer silica gel adsorption film.

[0011] To achieve this object, the present invention adopts the following technical solutions:

[0012] The present invention provides a method for cleaning a multi-zone semiconductor wafer silica gel adsorption film, the cleaning method comprising the following steps:

[0013] (1) After the multi-zone semiconductor wafer silica gel adsorption film is rinsed, the back side and radial position of the multi-zone semiconductor wafer silica gel adsorption film are wiped and cleaned;

[0014] (2) Using Archimedean parabola direction to wipe and clean the working surface of the multi-zone semiconductor wafer silica gel adsorption film;

[0015] (3) The multi-zone semiconductor wafer silica gel adsorption film is subjected to a first scrubbing, a heated ultrasonic cleaning and a second scrubbing in sequence to complete the cleaning of the multi-zone semiconductor wafer silica gel adsorption film.

[0016] The cleaning method of the multi-zone semiconductor wafer silica gel adsorption film of the present invention first rinses the multi-zone semiconductor wafer silica gel adsorption film to remove the easily removable impurities adsorbed on the surface; then, wipe and clean the back and radial position of the multi-zone semiconductor wafer silica gel adsorption film to remove the dirt accumulated in the radial position of each zone of the silica gel adsorption film, and wipe and clean the working surface of the multi-zone semiconductor wafer silica gel adsorption film in the direction of Archimedean parabola to remove impurities while avoiding scratching the working surface; then, perform the first scrubbing, heated ultrasonic cleaning and second scrubbing on the multi-zone semiconductor wafer silica gel adsorption film in sequence to further remove impurities such as particles and fibers adsorbed by the multi-zone semiconductor wafer silica gel adsorption film. The method of the present invention can be used as an industry standard operating procedure for multi-zone semiconductor wafer silica gel adsorption film products, which can mass-produce multi-zone semiconductor wafer silica gel adsorption films without damaging product quality, improve product cleaning efficiency, and avoid repeated cleaning and waste of useless work.

[0017] Preferably, the multi-zone semiconductor wafer silica gel adsorption film in step (1) includes any one of a 5-zone semiconductor wafer silica gel adsorption film, a 7-zone semiconductor wafer silica gel adsorption film or an 8-zone semiconductor wafer silica gel adsorption film.

[0018] The multi-zone semiconductor wafer silicone adsorption film of the present invention plays the role of suspending, adsorbing and pressurizing the semiconductor wafer when the grinding head polishes the semiconductor wafer, and has the characteristics of being thin, soft, easy to wear and scratch, and easy to adsorb impurities. The back of the multi-zone semiconductor wafer silicone adsorption film has a plurality of raised concentric rings, and grooves are formed between adjacent concentric rings, which are easy to accumulate impurities. The front of the multi-zone semiconductor wafer silicone adsorption film is a working surface, which is a flat plane and is used to adsorb semiconductor wafers.

[0019] The diameter positions of the multi-zone semiconductor wafer silicone adsorption film described in the present invention refer to the various intervals of the multi-zone semiconductor wafer silicone adsorption film, that is, the 5-zone semiconductor wafer silicone adsorption film has 5 diameter positions, the 7-zone semiconductor wafer silicone adsorption film has 7 diameter positions, and the 8-zone semiconductor wafer silicone adsorption film has 8 diameter positions; the diameter position rib height separating the diameter positions is 3.65 to 3.75 mm, for example, it can be 3.65 mm, 3.66 mm, 3.68 mm, 3.7 mm, 3.72 mm or 3.75 mm, etc., but is not limited to the listed values, and other unlisted values ​​within the numerical range are equally applicable.

[0020] Preferably, the rinsing in step (1) is performed using pure water.

[0021] Preferably, the wiping cleaning in step (1) is performed using tacrine dipped in a cleaning agent.

[0022] Preferably, the model of the cleaning agent is PE-188.

[0023] Preferably, the wiping cleaning starts from the center of the circle and wipes in the same direction until the largest outer circle, which can avoid repeated friction of pollutants and secondary contamination of the cleaned area.

[0024] Preferably, in step (2), the working surface of the multi-zone semiconductor wafer silica gel adsorption film is wiped from the center of the circle to the outermost side in the same direction, so as to avoid repeated friction of pollutants and secondary contamination of the cleaned area.

[0025] Preferably, in step (3), a dust gun is used for drying before the first scrubbing.

[0026] Preferably, the first scrubbing in step (3) is performed using a clean cloth dipped in isopropyl alcohol.

[0027] The purification cloth of the present invention is an ultra-fine purification cloth, which has fine and soft texture, does not produce cloth scraps and fiber threads, and can effectively remove adsorbents on the surface of the silica gel adsorption film.

[0028] Preferably, the first scrubbing is followed by drying with a dust gun.

[0029] Preferably, the heated ultrasonic cleaning in step (3) includes placing the bottom surface of the silica gel adsorption membrane in a dish shape into a pure water ultrasonic cleaning machine for cleaning.

[0030] Preferably, the heated ultrasonic cleaning in step (3) is carried out using ultrapure water with a resistivity greater than 18.2Ω, for example, it can be 18.3Ω, 18.5Ω, 18.8Ω, 19Ω, 19.5Ω or 20Ω, etc., but is not limited to the listed values, and other unlisted values ​​within this numerical range are also applicable.

[0031] Preferably, the temperature of the heated ultrasonic cleaning is 38-42°C, for example, it can be 38°C, 38.5°C, 39°C, 39.5°C, 40°C, 41°C or 42°C, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0032] The preferred temperature of the heated ultrasonic cleaning of the present invention is 38-42° C., which can effectively remove impurities on the surface of the silica gel adsorption film of the multi-zone semiconductor wafer without scalding the operator.

[0033] Preferably, the current of the heated ultrasonic cleaning is 2.7 to 3.0 A, for example, it can be 2.7 A, 2.75 A, 2.8 A, 2.85 A, 2.9 A, 2.95 A or 3.0 A, etc., but it is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable;

[0034] The frequency 26.2 to 26.5 KHz may be, for example, 26.2 KHz, 26.3 KHz, 26.4 KHz or 26.5 KHz, but is not limited to the listed values, and other values ​​not listed within the range are also applicable.

[0035] Preferably, the heating ultrasonic cleaning time is 5 to 10 minutes, for example, it can be 5 minutes, 5.5 minutes, 6 minutes, 7 minutes, 8 minutes or 10 minutes, but it is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0036] The water level of the ultrasonic machine in the heated ultrasonic cleaning of the present invention is 24 to 26 cm, for example, it can be 24 cm, 24.5 cm, 25 cm, 25.5 cm or 26 cm, but it is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable; this is because when the water level is lower than 20 cm, the ultrasonic heating function automatically turns on the overload protection and no heating is performed.

[0037] Preferably, the heated ultrasonic cleaning in step (3) is followed by drying with a dust gun.

[0038] Preferably, the second scrubbing is performed using a cleaning cloth dipped in isopropyl alcohol.

[0039] Preferably, the second scrubbing is followed by drying with a dust gun.

[0040] As a preferred technical solution of the present invention, the cleaning method comprises the following steps:

[0041] (1) After the multi-zone semiconductor wafer silica gel adsorption film is rinsed with pure water, the back and radial positions of the multi-zone semiconductor wafer silica gel adsorption film are wiped and cleaned by using a wipe-cleaner dipped in a cleaning agent starting from the center of the circle in the same direction until the largest outer circle;

[0042] The multi-zone semiconductor wafer silica gel adsorption film includes any one of a 5-zone semiconductor wafer silica gel adsorption film, a 7-zone semiconductor wafer silica gel adsorption film or an 8-zone semiconductor wafer silica gel adsorption film; the model of the cleaning agent is PE-188;

[0043] (2) Starting from the center of the circle, wipe in the same direction to the outermost side, using the Archimedean parabola direction to wipe and clean the working surface of the multi-zone semiconductor wafer silica gel adsorption film;

[0044] (3) After the multi-zone semiconductor wafer silica gel adsorption film is dried with a dust gun, it is first scrubbed with a clean cloth dipped in isopropyl alcohol and then dried with a dust gun; then, the bottom surface of the silica gel adsorption film is placed in a pure water ultrasonic cleaning machine in a dish shape for heating ultrasonic cleaning at a temperature of 38 to 42° C., a current of 2.7 to 3.0 A, and a frequency of 26.2 to 26.5 kHz for 5 to 10 minutes, and then dried with a dust gun; finally, it is second scrubbed with a clean cloth dipped in isopropyl alcohol and then dried with a dust gun to complete the cleaning of the multi-zone semiconductor wafer silica gel adsorption film;

[0045] The heated ultrasonic cleaning is performed using ultrapure water with a resistivity greater than 18.2Ω.

[0046] Compared with the prior art, the present invention has at least the following beneficial effects:

[0047] The cleaning method of a multi-zone semiconductor wafer silicone adsorption film provided by the present invention strictly controls the operation process, realizes the efficient cleaning of the multi-zone semiconductor wafer silicone adsorption film, effectively removes surface adsorbed particles, fibers and other attachments, is suitable for standardized operations in the batch product industry, and improves the product quality and cleaning efficiency of the multi-zone semiconductor wafer silicone adsorption film. DETAILED DESCRIPTION

[0048] For the convenience of understanding the present invention, the present invention lists the following embodiments. It should be understood by those skilled in the art that the embodiments are only to help understand the present invention and should not be regarded as specific limitations of the present invention.

[0049] The present invention is further described in detail below. However, the following examples are only simplified examples of the present invention and do not represent or limit the scope of protection of the present invention. The scope of protection of the present invention shall be subject to the claims.

[0050] The following are typical but non-limiting embodiments of the present invention:

[0051] Example 1

[0052] This embodiment provides a method for cleaning a multi-zone semiconductor wafer silica gel adsorption film, the cleaning method comprising the following steps:

[0053] (1) After the multi-zone semiconductor wafer silica gel adsorption film is rinsed with pure water, the back and radial positions of the multi-zone semiconductor wafer silica gel adsorption film are wiped and cleaned by using a wipe-cleaner dipped in a cleaning agent starting from the center of the circle in the same direction until the largest outer circle;

[0054] The multi-zone semiconductor wafer silica gel adsorption film is a 7-zone semiconductor wafer silica gel adsorption film; the model of the cleaning agent is PE-188;

[0055] (2) Starting from the center of the circle, wipe in the same direction to the outermost side, using the Archimedean parabola direction to wipe and clean the working surface of the multi-zone semiconductor wafer silica gel adsorption film;

[0056] (3) After the multi-zone semiconductor wafer silica gel adsorption film is dried with a dust gun, it is first scrubbed with a clean cloth dipped in isopropyl alcohol and then dried with a dust gun; then, the bottom surface of the silica gel adsorption film is placed in a pure water ultrasonic cleaning machine in a dish shape for 7 minutes of heated ultrasonic cleaning at a temperature of 40° C., a current of 2.8A, and a frequency of 26.4KHz, and then dried with a dust gun; finally, it is scrubbed with a clean cloth dipped in isopropyl alcohol and then dried with a dust gun to complete the cleaning of the multi-zone semiconductor wafer silica gel adsorption film;

[0057] The heated ultrasonic cleaning is performed using ultrapure water with a resistivity of 19Ω.

[0058] Example 2

[0059] This embodiment provides a method for cleaning a multi-zone semiconductor wafer silica gel adsorption film, the cleaning method comprising the following steps:

[0060] (1) After the multi-zone semiconductor wafer silica gel adsorption film is rinsed with pure water, the back and radial positions of the multi-zone semiconductor wafer silica gel adsorption film are wiped and cleaned by using a wipe-cleaner dipped in a cleaning agent starting from the center of the circle in the same direction until the largest outer circle;

[0061] The multi-zone semiconductor wafer silica gel adsorption film is a 5-zone semiconductor wafer silica gel adsorption film; the model of the cleaning agent is PE-188;

[0062] (2) Starting from the center of the circle, wipe in the same direction to the outermost side, using the Archimedean parabola direction to wipe and clean the working surface of the multi-zone semiconductor wafer silica gel adsorption film;

[0063] (3) After the multi-zone semiconductor wafer silica gel adsorption film is dried with a dust gun, it is first scrubbed with a clean cloth dipped in isopropyl alcohol and then dried with a dust gun; then, the bottom surface of the silica gel adsorption film is placed in a pure water ultrasonic cleaning machine in a dish shape for 5 minutes of heated ultrasonic cleaning at a temperature of 42° C., a current of 2.7A, and a frequency of 26.5KHz, and then dried with a dust gun; finally, it is scrubbed with a clean cloth dipped in isopropyl alcohol and then dried with a dust gun to complete the cleaning of the multi-zone semiconductor wafer silica gel adsorption film;

[0064] The heated ultrasonic cleaning is performed using ultrapure water with a resistivity of 18.8Ω.

[0065] Example 3

[0066] This embodiment provides a method for cleaning a multi-zone semiconductor wafer silica gel adsorption film, the cleaning method comprising the following steps:

[0067] (1) After the multi-zone semiconductor wafer silica gel adsorption film is rinsed with pure water, the back and radial positions of the multi-zone semiconductor wafer silica gel adsorption film are wiped and cleaned by using a wipe-cleaner dipped in a cleaning agent starting from the center of the circle in the same direction until the largest outer circle;

[0068] The multi-zone semiconductor wafer silica gel adsorption film is an 8-zone semiconductor wafer silica gel adsorption film; the model of the cleaning agent is PE-188;

[0069] (2) Starting from the center of the circle, wipe in the same direction to the outermost side, using the Archimedean parabola direction to wipe and clean the working surface of the multi-zone semiconductor wafer silica gel adsorption film;

[0070] (3) After the multi-zone semiconductor wafer silica gel adsorption film is dried with a dust gun, it is first scrubbed with a clean cloth dipped in isopropyl alcohol and then dried with a dust gun; then, the bottom surface of the silica gel adsorption film is placed in a pure water ultrasonic cleaning machine in a dish shape for 10 minutes of heated ultrasonic cleaning at a temperature of 38° C., a current of 3.0A, and a frequency of 26.2KHz, and then dried with a dust gun; finally, it is scrubbed with a clean cloth dipped in isopropyl alcohol and then dried with a dust gun to complete the cleaning of the multi-zone semiconductor wafer silica gel adsorption film;

[0071] The heated ultrasonic cleaning is performed using ultrapure water with a resistivity of 18.5Ω.

[0072] It can be seen from Examples 1 to 3 that the cleaning method for the multi-zone semiconductor wafer silicone adsorption film provided by the present invention strictly controls the operating process, achieves efficient cleaning of the multi-zone semiconductor wafer silicone adsorption film, effectively removes surface adsorbed particles, fibers and other attachments, and improves the product quality of the multi-zone semiconductor wafer silicone adsorption film.

[0073] Example 4

[0074] This embodiment provides a method for cleaning a multi-zone semiconductor wafer silica gel adsorption film. The cleaning method is the same as that of Embodiment 1 except that the temperature of ultrasonic cleaning in step (3) is 30°C.

[0075] Example 5

[0076] This embodiment provides a method for cleaning a multi-zone semiconductor wafer silica gel adsorption film. The cleaning method is the same as that of Embodiment 1 except that the temperature of ultrasonic cleaning in step (3) is 50°C.

[0077] It can be seen from Example 1 and Examples 4 to 5 that the temperature of ultrasonic cleaning in Example 4 is relatively low, which will result in that impurities on the surface of the silica gel adsorption film of the multi-zone semiconductor wafer cannot be completely removed; and the temperature of ultrasonic cleaning in Example 5 is relatively high, which will burn the operator.

[0078] Comparative Example 1

[0079] This comparative example provides a method for cleaning a multi-zone semiconductor wafer silica gel adsorption film. The cleaning method is the same as Example 1 except that step (2) wipes and cleans the working surface of the multi-zone semiconductor wafer silica gel adsorption film clockwise from the center of the circle.

[0080] Since this comparative example cleans the working surface of the multi-zone semiconductor wafer silicone adsorption film by wiping clockwise from the center of the circle, pollutants will be repeatedly rubbed on the working surface of the multi-zone semiconductor wafer silicone adsorption film, resulting in a decrease in the cleaning effect of the silicone adsorption film and scratching the working surface of the silicone adsorption film.

[0081] Comparative Example 2

[0082] This comparative example provides a method for cleaning a multi-zone semiconductor wafer silica gel adsorption film. The cleaning method is the same as Example 1 except that the first scrubbing is not performed in step (3).

[0083] Comparative Example 3

[0084] This comparative example provides a method for cleaning a multi-zone semiconductor wafer silica gel adsorption film. The cleaning method is the same as Example 1 except that step (3) does not perform heated ultrasonic cleaning.

[0085] It can be seen from Example 1 and Comparative Examples 2 to 3 that the absence of the first scrubbing in Comparative Example 2 and the absence of heated ultrasonic cleaning in Comparative Example 3 will result in the inability to completely remove impurities such as particles and fibers adsorbed on the surface of the multi-zone semiconductor wafer silicone adsorption film, thereby affecting the quality of the multi-zone semiconductor wafer silicone adsorption film.

[0086] The applicant declares that the above is only a specific implementation mode of the present invention, but the protection scope of the present invention is not limited thereto. Those skilled in the art should understand that any changes or substitutions that can be easily thought of by those skilled in the art within the technical scope disclosed by the present invention shall fall within the protection scope and disclosure scope of the present invention.

Claims

1. A method for cleaning a multi-zone semiconductor wafer silica gel adsorption film, characterized in that: The cleaning method comprises the following steps: (1) After the multi-zone semiconductor wafer silica gel adsorption film is rinsed, the back side and radial position of the multi-zone semiconductor wafer silica gel adsorption film are wiped and cleaned; (2) Using Archimedean parabola direction to wipe and clean the working surface of the multi-zone semiconductor wafer silica gel adsorption film; (3) The multi-zone semiconductor wafer silica gel adsorption film is subjected to a first scrubbing, a heated ultrasonic cleaning and a second scrubbing in sequence to complete the cleaning of the multi-zone semiconductor wafer silica gel adsorption film.

2. The cleaning method according to claim 1, characterized in that: The multi-zone semiconductor wafer silica gel adsorption film in step (1) includes any one of a 5-zone semiconductor wafer silica gel adsorption film, a 7-zone semiconductor wafer silica gel adsorption film or an 8-zone semiconductor wafer silica gel adsorption film; Preferably, the rinsing is performed using pure water.

3. The cleaning method according to claim 1 or 2, characterized in that: The wiping cleaning in step (1) is performed using tacrine dipped in a cleaning agent; Preferably, the cleaning agent is PE-188; Preferably, the wiping and cleaning starts from the center of the circle and wipes in the same direction until the largest outer circle.

4. The cleaning method according to any one of claims 1 to 3, characterized in that: In step (2), the working surface of the multi-zone semiconductor wafer silica gel adsorption film is wiped starting from the center of the circle and wiping in the same direction to the outermost side.

5. The cleaning method according to any one of claims 1 to 4, characterized in that: Step (3) Before the first scrubbing, use a dust gun to blow dry.

6. The cleaning method according to any one of claims 1 to 5, characterized in that: Step (3) the first scrubbing is performed using a clean cloth dipped in isopropyl alcohol; Preferably, the first scrubbing is followed by drying with a dust gun.

7. The cleaning method according to any one of claims 1 to 6, characterized in that: The heated ultrasonic cleaning in step (3) includes placing the bottom surface of the silica gel adsorption membrane in a dish shape into a pure water ultrasonic cleaning machine for cleaning.

8. The cleaning method according to any one of claims 1 to 7, characterized in that: The heated ultrasonic cleaning in step (3) is performed using ultrapure water with a resistivity greater than 18.2Ω; Preferably, the temperature of the heated ultrasonic cleaning is 38-42°C; Preferably, the current of the heated ultrasonic cleaning is 2.7-3.0A, and the frequency is 26.2-26.5KHz; Preferably, the heating ultrasonic cleaning time is 5 to 10 minutes.

9. The cleaning method according to any one of claims 1 to 8, characterized in that: After the heated ultrasonic cleaning in step (3), the cleaning is dried with a dust blowing gun; Preferably, the second scrubbing is performed using a cleaning cloth dipped in isopropyl alcohol; Preferably, the second scrubbing is followed by drying with a dust gun.

10. The cleaning method according to any one of claims 1 to 9, characterized in that: The cleaning method comprises the following steps: (1) After the multi-zone semiconductor wafer silica gel adsorption film is rinsed with pure water, the back and radial positions of the multi-zone semiconductor wafer silica gel adsorption film are wiped and cleaned by using a wipe-cleaner dipped in a cleaning agent starting from the center of the circle in the same direction until the largest outer circle; The multi-zone semiconductor wafer silica gel adsorption film includes any one of a 5-zone semiconductor wafer silica gel adsorption film, a 7-zone semiconductor wafer silica gel adsorption film or an 8-zone semiconductor wafer silica gel adsorption film; the model of the cleaning agent is PE-188; (2) Starting from the center of the circle, wipe in the same direction to the outermost side, using the Archimedean parabola direction to wipe and clean the working surface of the multi-zone semiconductor wafer silica gel adsorption film; (3) After the multi-zone semiconductor wafer silica gel adsorption film is dried with a dust gun, it is first scrubbed with a clean cloth dipped in isopropyl alcohol and then dried with a dust gun; then, the bottom surface of the silica gel adsorption film is placed in a pure water ultrasonic cleaning machine in a dish shape for heating ultrasonic cleaning at a temperature of 38 to 42° C., a current of 2.7 to 3.0 A, and a frequency of 26.2 to 26.5 KHz for 5 to 10 minutes, and then dried with a dust gun; finally, it is second scrubbed with a clean cloth dipped in isopropyl alcohol and then dried with a dust gun to complete the cleaning of the multi-zone semiconductor wafer silica gel adsorption film; The heated ultrasonic cleaning is performed using ultrapure water with a resistivity greater than 18.2Ω.