Magnetron sputtering cathode device, magnetron sputtering equipment and coating method

Abstract

The invention relates to a magnetron sputtering cathode device, magnetron sputtering equipment and a coating method. The magnetron sputtering cathode device comprises: a cover plate assembly comprising a cathode cover plate and a dielectric window, the cathode cover plate covers a vacuum chamber, the cathode cover plate is provided with a mounting hole arranged in a penetrating manner, and the dielectric window is arranged on the cathode cover plate and seals the mounting hole; the coil is arranged on the dielectric window and located on the outer side of the vacuum chamber; the shielding cover is arranged in the vacuum chamber and corresponds to the dielectric window, the shielding cover is provided with a bent radio frequency channel, and the radio frequency channel is communicated with the dielectric window and the vacuum chamber on the two sides of the shielding cover; and the cathode assembly comprises a target material and a magnetic part, the target material is arranged in the vacuum chamber, and the magnetic part is arranged in the target material. Thus, radio frequency electromagnetic waves generated by the coil can enter the vacuum chamber through the radio frequency channel to improve the density of the plasma, and sputtering particles can collide with the inductively coupled plasma to improve the ionization rate of the target material, optimize crystal grains of a deposited film layer and improve the performance of a device.

Description

Technical Field

[0001] The present application relates to the technical field of vacuum sputtering coating, and in particular to a magnetron sputtering cathode device, a magnetron sputtering equipment and a coating method. Background Art

[0002] At present, there are two methods for forming transparent conductive film layers (TCO, Coating Glass) in heterojunction batteries. One is to use vacuum magnetron sputtering (Physical Vapor Deposition, PVD) to deposit ITO (tin-doped indium oxide, Indium Tin Oxide) film layers, and the other is to use RPD (reactive plasma deposition) to deposit IWO / ICO (tungsten-doped indium oxide / cerium-doped indium oxide) film layers.

[0003] The two methods each have their own advantages and disadvantages. RPD has little film damage and a high material ionization rate, but it has problems such as poor film uniformity, serious particle / dust problems, and very low uptime. It can only coat from bottom to top, and is currently used more as a research and development impact. Magnetron sputtering PVD equipment has good film uniformity, high process stability, and high uptime. It can form double-sided films in a single machine and a single pass, and has a high single-machine output. Therefore, current mass production lines basically use magnetron sputtering PVD.

[0004] Vacuum sputtering coating technology has been widely used in the fields of semiconductors, solar energy, optics, aerospace, etc. Among them, magnetron sputtering coating has the advantages of fast sputtering speed, simple equipment, and easy control, which is suitable for long-term mass production. However, compared with RPD, magnetron sputtering PVD has a natural disadvantage. Due to the existence of its plasma high-pressure sheath, there is a bombardment effect of high-energy particles on the battery / substrate. In addition, the material ionization rate of the target material in magnetron sputtering PVD is very low, and the deposited TCO film layer has worse optoelectronic performance and battery conversion efficiency than RPD. Summary of the invention

[0005] Based on this, it is necessary to provide a magnetron sputtering cathode device, magnetron sputtering equipment and coating method to address the problem that low target material ionization rate / high particle energy affect film performance when vacuum magnetron sputtering is used to deposit film layers. The device can increase the ionization rate of the target material and reduce the particle energy, optimize the grain size of the deposited film layer, and improve the performance of the device. At the same time, it has a simple structure and is easy to implement.

[0006] A magnetron sputtering cathode device, comprising:

[0007] A cover plate assembly, comprising a cathode cover plate and a dielectric window, wherein the cathode cover plate is covered in a vacuum chamber, the cathode cover plate has a mounting hole extending therethrough, the mounting hole is connected to the vacuum chamber, and the dielectric window is disposed on the cathode cover plate and seals the mounting hole;

[0008] A coil, disposed on the dielectric window and located outside the vacuum chamber;

[0009] a shielding cover, disposed in the vacuum chamber and corresponding to the dielectric window, the shielding cover having a bent radio frequency channel; and

[0010] The cathode assembly comprises a target material and a magnetic component. The target material is arranged in the vacuum chamber, and the magnetic component is arranged inside the target material.

[0011] In one embodiment of the present application, the shielding cover includes a supporting portion and a shielding portion, the supporting portion is connected to the cathode cover plate, and the shielding portion is disposed on the supporting portion and shields the dielectric window;

[0012] Two ends of the radio frequency channel are located on two surfaces of the shielding part, so that the radio frequency channel is bent and arranged on the shielding part to connect the dielectric window and the vacuum chamber.

[0013] In one embodiment of the present application, the shielding portion includes a plurality of baffles, the plurality of baffles are staggered in the height direction and the vertical direction, and projections of two adjacent baffles in the horizontal direction partially overlap;

[0014] Two adjacent baffles are arranged vertically and horizontally to form the radio frequency channel.

[0015] In one embodiment of the present application, each of the baffles is at a different vertical height;

[0016] Alternatively, some of the baffles are at a first vertical height, some of the baffles are at a second vertical height, and the vertical heights of two adjacent baffles are different.

[0017] In one embodiment of the present application, the baffle includes a blocking portion and an overlapping portion, the overlapping portion is provided on at least one side of the blocking portion, and the overlapping portions of two adjacent baffles overlap in a horizontal direction.

[0018] In one embodiment of the present application, the height difference between two adjacent baffles in the vertical direction is h, and the overlapping length between two adjacent baffles in the horizontal direction is w, wherein w / h>4.

[0019] In one embodiment of the present application, the magnetic member is deflected toward the direction where the coil is located relative to the vertical direction of the target;

[0020] The angle between the magnetic part and the vertical direction ranges from 15° to 90°.

[0021] In one embodiment of the present application, the magnetron sputtering cathode device further includes at least one of the following features:

[0022] The first item is that the mounting hole is arranged in a rectangular shape and extends along the length direction of the target material, and the shape of the dielectric window is adapted to the shape of the mounting hole;

[0023] Second, the magnetron sputtering cathode device further comprises an insulating material, and the insulating material is filled in the radio frequency channel;

[0024] Item 3, the magnetron sputtering cathode device further comprises a radio frequency source, the first end of the coil is connected to the radio frequency source, and the second end of the coil is grounded or connected to the vacuum chamber;

[0025] Fourthly, the coil is hollow and a cooling medium flows in the coil;

[0026] Item 5, the coil is a planar coil or a spiral coil;

[0027] Item 6, the number of the coils is multiple and arranged in an array, and the potentials of the multiple coils are connected in parallel and / or in series;

[0028] Item 7: The shielding cover is grounded.

[0029] A magnetron sputtering device, comprising a vacuum housing, a bias device, a carrier plate and a magnetron sputtering cathode device as described in any of the above technical features;

[0030] The cover plate assembly of the magnetron sputtering cathode device is covered on the vacuum housing to form a vacuum chamber, the carrier plate and the shielding cover and target material of the magnetron sputtering cathode device are arranged in the vacuum chamber, and the substrate to be coated is placed on the carrier plate;

[0031] The biasing device is electrically connected to the carrier board.

[0032] A coating method, comprising:

[0033] S1, after the vacuum chamber is evacuated to the ultimate vacuum, an inert gas and a process gas are introduced into the vacuum chamber to make the pressure in the vacuum chamber reach the required process pressure;

[0034] S2, turning on the sputtering power supply to stimulate the generation of sputtering plasma;

[0035] S3, turning on the radio frequency source to stimulate the generation of inductively coupled plasma, so that the inductively coupled plasma is coupled with the sputtering plasma, thereby increasing the density of the sputtering plasma;

[0036] S4, after the target material is sputtered, the target material particles are separated from the surface of the target material. During the movement, the target material particles pass through the inductively coupled plasma and are collided by the inductively coupled plasma, so that the target material particles are at least partially ionized to form target material ions, and then deposited on the surface of the substrate to be coated.

[0037] After adopting the above technical solution, this application has at least the following technical effects:

[0038] The magnetron sputtering cathode device, magnetron sputtering equipment and coating method of the present application, in the magnetron sputtering cathode device, the cathode cover plate of the cover plate assembly is arranged on the top of the vacuum shell to form a vacuum chamber, the cathode cover plate has a mounting hole set through, the dielectric window is arranged above the cathode cover plate to seal the mounting hole, the coil is arranged above the dielectric window and is located on the outside of the vacuum chamber, the shielding cover is arranged corresponding to the dielectric window, the shielding cover has a bent radio frequency channel, and the radio frequency channel can connect the dielectric window and the vacuum chamber on both sides of the shielding cover, the target material of the cathode assembly is arranged in the vacuum chamber, and the magnetic part is arranged on the target material.

[0039] The magnetron sputtering cathode device has a mounting hole on the cathode cover plate, a dielectric window is used to seal the mounting hole, and a shield is provided to isolate the vacuum chamber from the dielectric window. The shield has a bent radio frequency channel, and the radio frequency electromagnetic wave generated by the coil can enter the vacuum chamber through the radio frequency channel, and the radio frequency power is coupled into the vacuum chamber to ionize the inert gas to generate a high-density inductively coupled plasma. The inductively coupled plasma can be coupled with the sputtering plasma to increase the density of the sputtering plasma, reduce its sputtering voltage, and reduce the damage of the sputtering process. At the same time, the target material sputters to generate sputtering particles, and the movement of the sputtering particles will pass through the inductively coupled plasma and collide with the electrons / subatoms in the inductively coupled plasma to increase the ionization rate of the target material. In this way, the sputtering particles are ionized and deposited on the surface of the substrate to be coated to form a deposited film layer, which can optimize the grains of the deposited film layer to improve the performance of the device. The structure of the magnetron sputtering cathode device is simple, and the complexity of the device is low. It can be directly modified on the current cathode cover plate, and it is easy to implement. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] FIG. 1 is a schematic structural diagram of a magnetron sputtering device according to an embodiment of the present application.

[0041] FIG. 2 is a partial schematic diagram of the magnetron sputtering equipment shown in FIG. 1 at a magnetron sputtering cathode device.

[0042] FIG. 3 is a schematic diagram of a shielding cover in the magnetron sputtering cathode device shown in FIG. 2 .

[0043] FIG. 4 is a top view of the coil in the magnetron sputtering device shown in FIG. 1 .

[0044] FIG. 5 is a schematic diagram showing the arrangement of a plurality of coils shown in FIG. 4

[0045] FIG. 6 is a schematic diagram showing sputtering voltages corresponding to different RF powers.

[0046] FIG. 7 is a schematic diagram of a coating method according to an embodiment of the present application.

[0047] Wherein: 10, magnetron sputtering equipment; 100, magnetron sputtering cathode device; 110, cover assembly; 111, cathode cover; 1111, mounting hole; 112, dielectric window; 120, coil; 121, first end; 122, second end; 130, shielding cover; 131, RF channel; 132, support part; 1321, flange; 133, shielding part; 1331, baffle; 13311, blocking part; 13312, overlapping part; 140, cathode assembly; 141, target material; 142, magnetic part; 150, RF source; 200, vacuum shell; 201, vacuum chamber; 300, carrier; 400, bias device; 50, substrate to be coated. DETAILED DESCRIPTION

[0048] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are described in detail below in conjunction with the accompanying drawings. In the following description, many specific details are set forth to facilitate a full understanding of the present application. However, the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without violating the connotation of the present application, so the present application is not limited by the specific embodiments disclosed below.

[0049] In the description of the present application, it should be understood that if the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. appear, the orientation or position relationship indicated by these terms is based on the orientation or position relationship shown in the accompanying drawings, which is only for the convenience of describing the present application and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application.

[0050] In addition, if the terms "first" or "second" appear, these terms are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the features. In the description of this application, if the term "plurality" appears, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0051] In this application, unless otherwise clearly specified and limited, if the terms "installed", "connected", "connected", "fixed" and the like appear, these terms should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integrated connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to the specific circumstances.

[0052] In the present application, unless otherwise clearly specified and limited, if there is a description that a first feature is "on" or "below" a second feature, etc., or the like, it may mean that the first and second features are in direct contact, or that the first and second features are in indirect contact through an intermediate medium. Moreover, the first feature being "above", "above" and "above" the second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. The first feature being "below", "below" and "below" the second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0053] It should be noted that if an element is referred to as being "fixed to" or "disposed on" another element, it may be directly on the other element or there may be a central element. If an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be a central element at the same time. If present, the terms "vertical", "horizontal", "upper", "lower", "left", "right" and similar expressions used in this application are for illustrative purposes only and do not represent the only implementation method.

[0054] Referring to FIG. 1 and FIG. 2 , the present application provides a magnetron sputtering cathode device 100, which is applied to a magnetron sputtering device 10. FIG. 1 is a schematic structural diagram of a magnetron sputtering device 10 of an embodiment of the present application, and FIG. 2 is a partial schematic diagram of the magnetron sputtering device 10 shown in FIG. 1 at the magnetron sputtering cathode device 100. The magnetron sputtering device 10 can bombard the surface of a target material 141, so that the target material 141 generates sputtered particles, and then the sputtered particles can be deposited on a substrate 50 to be coated, so as to form a deposited film layer on the surface of the substrate 50 to be coated, and then obtain the desired device. The device can be used to prepare heterojunction batteries or other semiconductor components.

[0055] It is understandable that when the ITO (Indium Tin Oxide) film is deposited by vacuum magnetron sputtering (Physical Vapor Deposition, PVD) method, the material ionization rate of the target material is very low, which will affect the deposition effect of the film layer, and further affect the optoelectronic performance of the transparent conductive film layer and the battery conversion efficiency. To this end, the present application provides a novel magnetron sputtering cathode device 100, which can improve the ionization rate of the target material 141, optimize the grains of the deposited film layer, and improve the performance of the device, while having a simple structure and being easy to implement.

[0056] In order to better illustrate the structure of the magnetron sputtering cathode device 100, the structure of the magnetron sputtering device 10 is briefly described here. The magnetron sputtering device 10 includes a vacuum shell 200, a carrier plate 300 and the magnetron sputtering cathode device 100 in the present application. The magnetron sputtering cathode device 100 is arranged on the top of the vacuum shell 200, and is surrounded by the vacuum shell 200 to form a vacuum chamber 201. The carrier plate 300 is arranged in the vacuum chamber 201, and is transmitted to and from the vacuum chamber 201 through a transmission device (not shown in the figure), such as a roller, and the carrier plate 300 is used to carry the substrate 50 to be coated. The specific structure of the magnetron sputtering cathode device 100 of an embodiment is introduced below in combination with the magnetron sputtering device 10.

[0057] Referring to FIG. 1 and FIG. 2 , in one embodiment, a magnetron sputtering cathode device 100 includes a cover plate assembly 110, a coil 120, a shielding cover 130, and a cathode assembly 140. The cover plate assembly 110 includes a cathode cover plate 111 and a dielectric window 112. The cathode cover plate 111 is covered on a vacuum chamber 201. The cathode cover plate 111 has a mounting hole 1111 extending therethrough. The mounting hole 1111 is connected to the vacuum chamber 201. The dielectric window 112 is provided on the cathode cover plate 111 and seals the mounting hole 1111. The coil 120 is provided on the dielectric window 112 and is located outside the vacuum chamber 201. The shielding cover 130 is provided in the vacuum chamber 201 and corresponds to the dielectric window 112. The shielding cover 130 has a folded radio frequency channel 131. The two ends of the radio frequency channel 131 are located on two surfaces of the shielding cover 130 and connect the dielectric window 112 and the vacuum chamber 201. The cathode assembly 140 includes a target 141 and a magnetic member 142 . The target 141 is disposed in the vacuum chamber 201 , and the magnetic member 142 is disposed inside the target 141 .

[0058] The cover plate assembly 110 is the top cover of the vacuum housing 200. The cover plate assembly 110 is disposed on the top of the vacuum housing 200. The cover plate assembly 110 is sealed with the vacuum housing 200 to form a vacuum chamber 201. When the magnetron sputtering device 10 is working, the vacuum chamber 201 is first evacuated, and then an inert gas and / or process gas (hereinafter only inert gas is used as an example for explanation) is introduced into the vacuum chamber 201 before the sputtering operation is performed. The cathode assembly 140 is disposed in the vacuum chamber 201, and the carrier plate 300 of the magnetron sputtering device 10 is equivalent to an anode in the vacuum chamber 201. The sputtering power supply is connected to the cathode assembly 140, and the sputtering power supply applies a sputtering voltage to the cathode assembly 140, which can ionize the inert gas in the vacuum chamber 201 to generate sputtering plasma.

[0059] The positively charged ions in the sputtering plasma can collide with the target material 141 to cause the target material 141 to sputter and generate sputtering particles. A magnetic part 142 is arranged in the target material 141, and the magnetic part 142 can generate a magnetic field to bind the secondary electrons, so that the electrons perform cyclotron motion, increase the probability of collision with the inert gas, and improve the density of the sputtering plasma. Among the sputtering particles, neutral target atoms or molecules can be deposited on the substrate 50 to be coated on the carrier 300 to form a deposited film layer. Optionally, the magnetic part is a magnetic bar or a magnet array, etc.

[0060] The magnetic field generated by the magnetic member 142 can enhance the density of the sputtering plasma in the vacuum chamber 201, and at the same time, can also confine the electrons generated by the ionization of the inert gas near the target material 141, thereby increasing the deposition rate and reducing the damage to the substrate 50 to be coated, thereby ensuring the quality of the deposited film on the substrate 50 to be coated. It is worth noting that the principle of magnetron sputtering, the structural form of the magnetic member 142 and the target material 141, and the working principle are prior arts and will not be described in detail here.

[0061] In order to improve the ionization rate of the target material 141, the present application sets a mounting hole 1111 on the cathode cover plate 111 of the cathode assembly 140, and the mounting hole 1111 is set through the cathode cover plate 111 and connected to the vacuum chamber 201. At the same time, a dielectric window 112 is set on the cathode cover plate 111, and the mounting hole 1111 is sealed by the dielectric window 112. The coil 120 is set on the upper surface of the dielectric window 112 and is located outside the vacuum chamber 201. The coil 120 is connected to the RF source 150. After the RF source 150 energizes the coil 120, the coil 120 can generate RF electromagnetic waves. The dielectric window 112 can allow the RF electromagnetic waves generated by the coil 120 to enter the vacuum chamber 201.

[0062] After the RF electromagnetic wave enters the vacuum chamber 201 through the dielectric window 112, the RF electromagnetic wave can couple with the inert gas in the vacuum chamber 201, causing the inert gas to be ionized to generate a high-density inductively coupled plasma (ICP). This inductively coupled plasma can couple with the sputtering plasma to increase the density of the sputtering plasma, reduce its sputtering voltage, and reduce sputtering damage.

[0063] At the same time, the sputtered particles generated by the sputtering of the target material 141 can also pass through the radio frequency electromagnetic wave. Since the density of the inductively coupled plasma in the vacuum chamber 201 is relatively high, the movement of the sputtered particles will pass through the inductively coupled plasma. The electrons / subatoms in the inductively coupled plasma can collide with the sputtered particles, so that the sputtered particles are further ionized, thereby improving the ionization rate of the target material 141. In this way, the target material ions generated after the sputtered particles are ionized are deposited on the substrate 50 to be coated to form a deposited film layer, which can optimize the deposited film layer grains and improve its electrical and optical properties, thereby improving the performance of the device.

[0064] Furthermore, in order to prevent the sputtered particles from being deposited on the dielectric window 112, the present application further adds a shielding cover 130 in the mounting hole 1111, and the shielding cover 130 is arranged corresponding to the dielectric window 112 to shield the dielectric window 112. In this way, after the sputtered particles are ionized, due to the blocking effect of the dielectric window 112, the sputtered particles cannot be deposited on the dielectric window 112, thereby ensuring the dielectric stability and transmittance of the dielectric window 112, and improving the discharge stability of the inductively coupled plasma and the long-term stability of the device.

[0065] After the shielding cover 130 is set corresponding to the dielectric window 112, it will also affect the radio frequency electromagnetic waves entering the vacuum chamber 201. At this time, a bent radio frequency channel 131 is set on the shielding cover 130, and the radio frequency channel 131 can be connected to the dielectric window 112 and the vacuum chamber 201 on both sides of the shielding cover 130. In this way, the radio frequency electromagnetic waves generated by the coil 120 can enter the vacuum chamber 201 through the dielectric window 112 and the radio frequency channel 131. At the same time, due to the bent setting of the radio frequency channel 131, the sputtered particles cannot pass through the bent radio frequency channel 131, and thus will not be deposited on the dielectric window 112.

[0066] That is to say, utilizing the characteristic that RF electromagnetic waves can pass through the bent RF channel 131 but sputtered particles cannot pass through the bent RF channel 131, the present application sets a bent RF channel 131 on the shielding cover 130 to allow RF electromagnetic waves to enter the vacuum chamber 201 and prevent sputtered particles from being deposited on the dielectric window 112, so as to improve the discharge stability of the inductively coupled plasma and improve the ionization rate of the target material 141.

[0067] The magnetron sputtering cathode device 100 of the above embodiment has a mounting hole 1111 opened on the cathode cover plate 111, a dielectric window 112 is used to seal the mounting hole 1111, and a shielding cover 130 is provided to isolate the vacuum chamber 201 from the dielectric window 112. The shielding cover 130 has a RF channel 131 with a bent arrangement. The RF electromagnetic wave generated by the coil 120 can enter the vacuum chamber 201 through the RF channel 131, and the RF power is coupled into the vacuum chamber 201 to ionize the inert gas to generate a high-density inductively coupled plasma. This inductively coupled plasma can be coupled with the sputtering plasma to increase the density of the sputtering plasma, reduce its sputtering voltage, and reduce the damage during the sputtering process. At the same time, the target material 141 is sputtered to generate sputtering particles. The movement of the sputtering particles will pass through the inductively coupled plasma and collide with the electrons / subatoms in the inductively coupled plasma to increase the ionization rate of the target material 141. In this way, the sputtering particles are ionized and deposited on the surface of the substrate 50 to be coated to form a deposited film layer, which can optimize the grains of the deposited film layer to improve the performance of the device.

[0068] At the same time, the implementation method of the magnetron sputtering cathode device 100 can be directly modified on the basis of the existing cathode cover plate 111, and the mounting hole 1111 is directly opened on the cathode cover plate 111, and the shielding cover 130 and the coil 120 are added. In this way, the existing structure is slightly changed, and the structure of the magnetron sputtering cathode device 100 is simple, the complexity of the device is low, and it is easy to implement.

[0069] In one embodiment, the mounting hole 1111 is arranged in a rectangular shape and extends along the length direction of the target material 141, and the shape of the dielectric window 112 is adapted to the shape of the mounting hole 1111. The shielding cover 130 is arranged in a rectangular shape in the mounting hole 1111. The cross section of the mounting hole 1111 is rectangular, so as to be arranged along the length direction of the target material 141. At the same time, the shape of the shielding cover 130 is adapted to the shape of the mounting hole 1111. After the shielding cover 130 is arranged in the mounting hole 1111, it can effectively shield the dielectric window 112. The dielectric window 112 is arranged in a rectangular shape. The mounting hole 1111 is sealed by the rectangular dielectric window 112.

[0070] In one embodiment, the shielding cover 130 is partially located in the mounting hole 1111 and partially located outside the mounting hole 1111. In this way, it is possible to ensure that the shielding cover 130 effectively shields the dielectric window 112 and prevents sputtered particles from being deposited on the dielectric window 112. Of course, in other embodiments of the present application, the shielding cover 130 may also be disposed outside the mounting hole 1111, as long as the dielectric window 112 can be shielded.

[0071] Referring to Fig. 1 to Fig. 3, in one embodiment, the shielding cover 130 includes a supporting portion 132 and a shielding portion 133, wherein the supporting portion 132 is connected to the cathode cover plate 111, and the shielding portion 133 is disposed on the supporting portion 132 and shields the dielectric window 112; the two ends of the RF channel 131 are located on two surfaces of the shielding portion 133, so that the RF channel 131 is bent and disposed in the shielding portion 133 to connect the dielectric window 112 and the vacuum chamber 201. Fig. 3 is a schematic diagram of the shielding cover 130 in the magnetron sputtering cathode device 100 shown in Fig. 2.

[0072] The support portion 132 is hollow, and the shielding portion 133 is disposed on the top of the support portion 132 . The shielding portion 133 is a top cover of the support portion 132 and is disposed corresponding to the dielectric window 112 . The shielding portion 133 shields the dielectric window 112 to prevent sputtered particles from being deposited on the dielectric window 112 .

[0073] The RF channel 131 is disposed on the shielding portion 133 and is bent to penetrate the shielding portion 133. One end of the RF channel 131 penetrates to the top of the shielding portion 133, and the other end of the RF channel 131 penetrates to the bottom of the shielding portion 133, so that the RF channel 131 can connect the dielectric window 112 and the vacuum chamber 201. In this way, the RF electromagnetic waves generated by the coil 120 can enter the vacuum chamber 201 through the RF channel 131 of the shielding portion 133.

[0074] In one embodiment, the support portion 132 is partially located in the mounting hole 1111. In this way, the support portion 132 enables the shielding portion 133 to be disposed corresponding to the dielectric window 112. Of course, in other embodiments of the present application, the support portion 132 may also be located outside the mounting hole 1111.

[0075] In one embodiment, the outer wall of the support portion 132 is close to and corresponds to the inner wall of the mounting hole 1111. This can reduce the gap between the support portion 132 and the mounting hole 1111, and prevent sputtered particles from entering between the support portion 132 and the mounting hole 1111.

[0076] In one embodiment, the support portion 132 is configured in a hollow rectangular shape to match the shape of the dielectric window 112 to stably support the shielding portion 133. Of course, in other embodiments of the present application, the support portion 132 may also be a relatively arranged support plate, a support frame, or other structural forms capable of stably supporting the shielding portion 133.

[0077] Optionally, the outer diameter of the support portion 132 is slightly smaller than the inner diameter of the mounting hole 1111. In this way, after the support portion 132 is installed in the mounting hole 1111, sputtered particles can be prevented from entering between the support portion 132 and the mounting hole 1111, thereby ensuring the shielding effect of the shielding cover 130.

[0078] In one embodiment, the shielding portion 133 and the supporting portion 132 are an integral structure. In this way, the structural strength of the connection between the shielding portion 133 and the supporting portion 132 can be ensured to ensure the performance of the shielding cover 130. Of course, in other embodiments of the present application, the shielding portion 133 and the supporting portion 132 can also be provided separately, and the two can be fixedly connected by welding / threaded connection, etc., and the reliability of the connection between the two can be ensured.

[0079] Referring to FIGS. 1 to 3 , in one embodiment, one end of the support portion 132 away from the shielding portion 133 has a flange 1321 extending toward the outside. That is, the edge of the support portion 132 has a flange 1321, and the flange 1321 extends toward the outside of the support portion 132. In this way, the support portion 132 can abut against the cathode cover plate 111 through the flange 1321 to achieve the fixing of the shielding cover 130. Moreover, the flange 1321 can also block the gap between the support portion 132 and the inner wall of the mounting hole 1111, preventing sputtered particles from entering the gap between the support portion 132 and the mounting hole 1111.

[0080] Referring to Figures 1 to 3, in one embodiment, the shielding portion 133 includes a plurality of baffles 1331, and the plurality of baffles 1331 are staggered in the height direction and the vertical direction, and the projections of two adjacent baffles 1331 in the horizontal direction partially overlap; the two adjacent baffles 1331 are arranged to enclose the RF channel 131 in the vertical and horizontal directions.

[0081] That is to say, the shielding part 133 is formed by staggered splicing of a plurality of baffles 1331. Each baffle 1331 is arranged on the support part 132, and the baffle 1331 is supported by the support part 132. Moreover, there is a certain distance between two adjacent baffles 1331 in the vertical direction and the horizontal direction, as shown in Figures 1 to 3, the vertical direction and the horizontal direction are based on the direction shown in Figure 2, and the directions shown in Figures 1 and 3 are substantially the same as the direction shown in Figure 1.

[0082] Moreover, the projections of two adjacent baffles 1331 in the horizontal direction overlap to a certain extent, so that the two adjacent baffles 1331 form a maze-like RF channel 131 in the vertical direction and the horizontal direction, that is, the RF channel 131 is bent. The maze-like RF channel 131 ensures the effective transmission of RF electromagnetic waves, and at the same time, can prevent sputtered particles from being deposited on the dielectric window 112.

[0083] It is worth noting that the number of baffles 1331 is not limited in principle, as long as the multiple baffles 1331 can effectively shield the dielectric window 112 and form a bent RF channel 131. In this embodiment, four baffles 1331 are used to form the shielding portion 133. Of course, in other embodiments of the present application, two baffles 1331 or even more baffles 1331 can also be used to form the shielding portion 133.

[0084] Referring to Figures 1 to 3, in one embodiment of the present application, part of the baffles 1331 are at a first vertical height, part of the baffles 1331 are at a second vertical height, and the vertical heights of two adjacent baffles 1331 are different. In other words, each baffle 1331 in the present application has two vertical heights, namely, the first vertical height and the second vertical height, the height of part of the baffles 1331 is the first vertical height, and the height of the remaining baffles 1331 is the second vertical height.

[0085] The first vertical height is greater than the second vertical height, that is, the baffle 1331 at the first vertical height is located above the baffle 1331 at the second vertical height, and the vertical heights of two adjacent baffles 1331 are different. In this way, a RF channel 131 can be formed between the two adjacent baffles 1331.

[0086] Referring to FIG. 1 to FIG. 3 , in another embodiment of the present application, each of the baffles 1331 is at a different vertical height. That is, each baffle 1331 is at a different vertical height, which can also play a blocking role. Of course, in other embodiments of the present application, each baffle 1331 may also have three or other numbers of vertical heights, as long as the RF channel 131 in the present application can be formed.

[0087] Referring to FIGS. 1 to 3 , in one embodiment, the baffle 1331 includes a blocking portion 13311 and an overlapping portion 13312, wherein the overlapping portion 13312 is disposed on at least one side of the blocking portion 13311, and the overlapping portions 13312 of two adjacent baffles 1331 overlap in the horizontal direction. The baffle 1331 is divided into an overlapping portion 13312 and a blocking portion 13311 in the horizontal direction, wherein the overlapping portion 13312 is disposed on at least one side of the blocking portion 13311. That is, some baffles 1331 have one overlapping portion 13312, and some baffles 1331 have two overlapping portions 13312.

[0088] The blocking portion 13311 can shield the dielectric window 112 to prevent sputtered particles from being deposited on the dielectric window 112. The overlapping portion 13312 is located on the side of the blocking portion 13311 to overlap with the overlapping portion 13312 of the adjacent baffle 1331 in the horizontal direction to form a bent RF channel 131. Optionally, the blocking portion 13311 and the overlapping portion 13312 are an integrated structure to ensure the structural strength of the baffle 1331.

[0089] When there is another adjacent baffle 1331 on only one side of the baffle 1331, the baffle 1331 has an overlapping portion 13312 overlapping with the adjacent baffle 1331. When there are adjacent baffles 1331 on both sides of the baffle 1331, the baffle 1331 has two overlapping portions 13312, and each overlapping portion 13312 overlaps with the baffle 1331 at the corresponding position.

[0090] Referring to Figures 1 to 3, in one embodiment, the height difference between two adjacent baffles 1331 in the vertical direction is h, and the overlapping length of two adjacent baffles 1331 in the horizontal direction is w, wherein w / h>4. That is, the length of the overlapping portion 13312 in the horizontal direction is w, and the distance between the overlapping portions 13312 of two adjacent baffles 1331 in the vertical direction is h, and w / h is the aspect ratio of the RF channel 131. The w / h of the RF channel 131>4 can make the RF channel 131 have a narrow and long configuration, which can not only ensure that the RF electromagnetic waves can pass through the RF channel 131, but also prevent sputtered particles from being deposited on the dielectric window 112.

[0091] In one embodiment, the magnetron sputtering cathode device 100 further includes an insulating material, and the insulating material is filled in the RF channel 131. The insulating material can play an insulating role in the RF channel 131, and at the same time, it can ensure that the RF electromagnetic waves can pass through the RF channel 131, and prevent sputtered particles from being deposited on the dielectric window 112. Optionally, the insulating material includes but is not limited to ceramics, and can also be other materials that can play an insulating role.

[0092] In one embodiment, the shielding cover 130 is a Faraday shielding cover, and the shielding cover 130 is grounded. The shielding cover 130 can be grounded, or the shielding cover 130 can be connected to the vacuum housing 200 and grounded through the vacuum housing 200, so that the shielding effect of the shielding cover 130 can be ensured and capacitive coupling can be reduced.

[0093] Referring to FIG. 1 , in one embodiment, the magnetic member 142 is deflected toward the direction where the coil 120 is located relative to the vertical direction of the target 141. That is, the magnetic member 142 is deflected toward the direction where the coil 120 is located, so that there is a certain angle β between the magnetic member 142 and the vertical axis of the target 141. In this way, it is beneficial to the coupling of the sputtering plasma and the inductively coupled plasma, increase the density of the sputtering plasma, thereby reducing the sputtering voltage, and thus reducing the damage to the carrier 300 during the sputtering process.

[0094] At the same time, the sputtered particles generated by the sputtering of the target material 141 can pass through the inductively coupled plasma generated by radio frequency electromagnetic waves before deposition. The electrons / subatomic particles in the inductively coupled plasma collide with the passing sputtered particles to ionize them into target material ions and then deposit them on the substrate 50 to be coated, thereby improving the performance of the deposited film layer and increasing the utilization rate of the target material 141.

[0095] Referring to FIG. 1 , in one embodiment, the angle β between the magnetic member 142 and the vertical direction is in the range of 15° to 90°. In other words, the magnetic member 142 is deflected toward the direction where the coil 120 is located, so that the angle β between the magnetic member 142 and the vertical axis of the target 141 is in the range of 15° to 90°, which can reduce the sputtering voltage, increase the ionization rate, and improve the performance of the deposited film layer.

[0096] Optionally, the angle β between the magnetic member 142 and the vertical direction is 15°, 30°, 45°, 60°, 75°, 90°, or any value between 15° and 90°. Exemplarily, the angle β between the magnetic member 142 and the vertical direction is 45°.

[0097] 1 , in one embodiment, there are two cathode assemblies 140, which are symmetrically arranged on the cathode cover plate 111, and the mounting hole 1111 is located in the middle area of ​​the cathode assemblies 140. The magnetic members 142 of the two cathode assemblies 140 are inclined toward the coil 120 in the middle.

[0098] In one embodiment, the dielectric window 112 is made of quartz material. That is, the dielectric window 112 is a quartz dielectric window. The dielectric window 112 made of quartz has good transmittance to allow radio frequency electromagnetic waves to pass through. At the same time, the dielectric window 112 made of quartz has a low thermal expansion coefficient. The dielectric window 112 is not easy to deform after being heated, thereby ensuring the performance of the dielectric window 112.

[0099] In one embodiment, the cathode assembly 140 includes a first seal, which is disposed between the cathode cover plate 111 and the dielectric window 112. The first seal ensures the sealing performance between the cathode cover plate 111 and the dielectric window 112, thereby ensuring the sealing performance of the vacuum chamber 201. Optionally, the first seal is a sealing ring or other structural forms capable of achieving sealing.

[0100] In one embodiment, the cathode assembly 140 further includes a second seal, which is disposed between the cathode cover plate 111 and the vacuum housing 200. The second seal ensures the sealing performance between the cathode cover plate 111 and the vacuum housing 200, thereby ensuring the sealing performance of the vacuum chamber 201. Optionally, the second seal is a sealing ring or other structural forms capable of achieving sealing.

[0101] As shown in FIG1 , in one embodiment, the magnetron sputtering cathode device 100 further includes a radio frequency source 150, the first end 121 of the coil 120 is connected to the radio frequency source 150, and the second end 122 of the coil 120 is grounded or connected to the vacuum chamber 201. The radio frequency source 150 is a component that enables the coil 120 to generate radio frequency electromagnetic waves. The coil 120 has a first end 121 and a second end 122 that are opposite to each other, the first end 121 of the coil 120 is connected to the radio frequency source 150, and the second end 122 of the coil 120 is fixedly grounded, or the second end 122 of the coil 120 is connected to the vacuum shell 200 of the vacuum chamber 201, and then grounded through the vacuum shell 200. After the second end 122 of the coil 120 is grounded, potential insulation can be performed between the first end 121 and the second end 122. The radio frequency source 150 here is a radio frequency source matcher.

[0102] After the RF source 150 is powered on, it can control the coil 120 to generate RF electromagnetic waves, and the RF electromagnetic waves can enter the vacuum chamber 201 through the RF channel 131 of the shielding cover 130 to couple with the inert gas so that the inert gas is easily ionized, thereby increasing the density of the plasma in the vacuum chamber 201. At the same time, after the plasma bombards the target material 141 to generate sputtered particles, the sputtered particles pass through the inductively coupled plasma and collide with the electrons / subatoms in the inductively coupled plasma, thereby increasing the ionization rate of the target material 141.

[0103] In one embodiment, the coil 120 is hollow, and a cooling medium flows in the coil 120. That is, the coil 120 is a hollow structure as a whole, and the interior thereof is a hollow flow channel. The cooling medium can enter the flow channel at the first end 121 of the coil 120 and flow along the flow channel to cool the coil 120, and the cooling medium after absorbing heat flows out from the second end 122. In this way, the coil 120 is cooled by the cooling medium, thereby preventing the heat generated by the coil 120 from being transferred to the dielectric window 112 and the cathode cover plate 111, so as to avoid overheating and damage to the device components.

[0104] Referring to Figures 1, 2 and 4, in one embodiment, the coil 120 is a planar coil or a spiral coil. Figure 4 is a top view of the coil 120 in the magnetron sputtering device 10 shown in Figure 1. In this embodiment, the coil 120 is arranged in a winding shape. Of course, in other embodiments of the present application, the coil 120 can also be arranged in a straight line, a curve or other shapes. It should be noted that the type of coil 120 is not limited in principle, as long as the coil 120 can generate radio frequency electromagnetic waves after being connected to the radio frequency source 150.

[0105] In this embodiment, as shown in FIG4 , the coil 120 is a planar coil. Of course, in other embodiments of the present application, the coil 120 may also be a spiral coil or other types of coils, and the coil 120 may be single-layer or multi-layer. Optionally, the number of coils 120 may be one. Of course, the number of coils 120 may also be multiple, and the multiple coils are arranged in an array, and the multiple coils 120 are connected in parallel and / or in series with potentials, as shown in FIG5 , which is a schematic diagram of the arrangement of the coils 120 shown in FIG4 when there are multiple coils. It is worth noting that the positions of the first end 121 and the second end 122 in the coil 120 may also be interchangeable, which will not be repeated here.

[0106] The magnetron sputtering cathode device 100 of the present application has a mounting hole 1111 on the cathode cover plate 111, and a dielectric window 112 is used to seal the mounting hole 1111. A shielding cover 130 is arranged in the mounting hole 1111 to isolate the vacuum chamber 201 from the dielectric window 112. The shielding cover 130 has a bent radio frequency channel 131. The radio frequency electromagnetic wave generated by the coil 120 can enter the vacuum chamber 201 through the radio frequency channel 131, and can ionize the inert gas in the vacuum chamber 201 to generate a high-density inductively coupled plasma. The inductively coupled plasma can be coupled with the sputtering plasma to increase the density of the sputtering plasma. At the same time, the target material 141 is sputtered to generate sputtering particles. The sputtering particles pass through the inductively coupled plasma and collide with the electrons / subatoms in the inductively coupled plasma, thereby increasing the ionization rate of the target material 141. In this way, the sputtering particles are ionized and deposited on the surface of the substrate 50 to be coated to form a deposited film layer, which can optimize the grains of the deposited film layer to improve the performance of the device. Furthermore, the magnetron sputtering cathode device 100 has a simple structure and low device complexity, and can be directly manufactured on the existing cathode cover plate 111, which is easy to implement.

[0107] Referring to FIG. 1 , the present application further provides a magnetron sputtering device 10, comprising a vacuum housing 200, a carrier plate 300, and a magnetron sputtering cathode device 100 as in any of the above embodiments. The cover plate assembly 110 of the magnetron sputtering cathode device 100 is covered on the vacuum housing 200 to form a vacuum chamber 201, the carrier plate 300 and the shielding cover 130 and the target material 141 of the magnetron sputtering cathode device 100 are arranged in the vacuum chamber 201, and the substrate 50 to be coated is placed on the carrier plate 300. After the magnetron sputtering device 100 of the present application adopts the magnetron sputtering cathode device 100 of the above embodiment, the ionization rate of the target material 141 can be improved, so that the sputtered particles are ionized and deposited on the surface of the substrate 50 to be coated to form a deposited film layer, and the grains of the deposited film layer can be optimized to improve the performance of the device.

[0108] 1 , in one embodiment, the magnetron sputtering device 10 further includes a bias device 40, which is electrically connected to the carrier 300 to control the bombardment energy of the substrate to be coated 50. The energy of the sputtered particles deposited on the substrate to be coated 50 can be controlled by applying a DC / RF bias through the bias device 40 to expand the process debugging window.

[0109] The process of the magnetron sputtering device 10 of the present application is as follows: after the vacuum chamber 201 is evacuated, an inert gas is introduced into the vacuum chamber 201 so that the pressure in the vacuum chamber 201 reaches the required process pressure. Subsequently, the sputtering power supply is turned on, and the sputtering power is fed into the sputtering power to generate sputtering plasma. The RF source 150 is turned on, and the RF source 150 is energized to the coil 120 so that the coil 120 is fed with RF power to generate RF electromagnetic waves. The RF electromagnetic waves penetrate the dielectric window 112 and the RF channel 131 of the shielding cover 130 and enter the vacuum chamber 201, and the RF power is coupled into the vacuum chamber 201 to ionize the inert gas to generate a high-density inductively coupled plasma. This inductively coupled plasma can be coupled with the sputtering plasma to increase the density of the sputtering plasma. In this way, the sputtering voltage is greatly reduced under the same power, and the energy of the negative ions in the sputtering process bombarding the substrate 50 to be coated is greatly reduced, reducing the damage to the substrate 50 to be coated and improving the performance of the battery device. As shown in FIG. 6 , FIG. 6 is a schematic diagram of sputtering voltages corresponding to different RF powers.

[0110] The sputtering plasma can bombard the surface of the target material 141 with high energy to generate sputtering particles, which can be separated from the surface of the target material 141. During the movement, the sputtering particles will pass through the inductively coupled plasma and collide with the electrons / subatoms in the plasma to increase the ionization rate of the target material 141. In this way, the target ions generated after the sputtering particles are ionized are deposited on the substrate 50 to be coated to form a deposited film layer, which can optimize the grains in the deposited film layer and improve its electrical and optical properties, thereby improving the performance of the battery device.

[0111] See Figure 7, which is a schematic diagram of a coating method according to an embodiment of the present application. The present application also provides a coating method, using the magnetron sputtering device 10 as described in the above embodiment, the coating method comprising:

[0112] S1, after the vacuum chamber 201 is evacuated to the ultimate vacuum, an inert gas and / or a process gas is introduced into the vacuum chamber 201 to make the pressure in the vacuum chamber 201 reach the required process pressure;

[0113] S2, turning on the sputtering power supply to stimulate the generation of sputtering plasma;

[0114] S3, turning on the radio frequency source 150 to stimulate the generation of inductively coupled plasma, so that the inductively coupled plasma is coupled with the sputtering plasma, thereby increasing the density of the sputtering plasma;

[0115] S4, after the target material 141 is sputtered, the target material 141 particles are separated from the surface of the target material 141, and the target material 141 particles pass through the inductively coupled plasma and are collided by the inductively coupled plasma during movement, so that the target material 141 particles are at least partially ionized to form target material 141 ions, and then deposited onto the surface of the substrate 50 to be coated.

[0116] The process of the magnetron sputtering device 10 of the present application is as follows: after the vacuum chamber 201 is evacuated, an inert gas is introduced into the vacuum chamber 201 so that the pressure in the vacuum chamber 201 reaches the required process pressure. Subsequently, the sputtering power supply is turned on, and the sputtering power is fed into the sputtering power to generate sputtering plasma. The RF source 150 is turned on, and the RF source 150 is energized to the coil 120 so that the coil 120 is fed with RF power to generate RF electromagnetic waves. The RF electromagnetic waves penetrate the dielectric window 112 and the RF channel 131 of the shielding cover 130 and enter the vacuum chamber 201, and the RF power is coupled into the vacuum chamber 201 to ionize the inert gas to generate a high-density inductively coupled plasma. This inductively coupled plasma can be coupled with the sputtering plasma to increase the density of the sputtering plasma. In this way, the sputtering voltage is greatly reduced under the same power, and the energy of the negative ions in the sputtering process bombarding the substrate 50 to be coated is greatly reduced, reducing the damage to the substrate 50 to be coated and improving the performance of the battery device. As shown in FIG. 6 , FIG. 6 is a schematic diagram of sputtering voltages corresponding to different RF powers.

[0117] The sputtering plasma can bombard the surface of the target material 141 with high energy to generate sputtering particles, and the sputtering particles can be separated from the surface of the target material 141. During the movement, at least part of the sputtering particles will pass through the inductively coupled plasma and collide with the plasma, for example, pass through the inductively coupled plasma and collide with the electrons / subatoms in the inductively coupled plasma to improve the ionization rate of the target material 141. In this way, the target material ions generated after the sputtering particles are ionized are deposited on the substrate 50 to be coated to form a deposited film layer, which can optimize the grains in the deposited film layer and improve its electrical and optical properties, thereby improving the performance of the battery device.

[0118] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0119] The above-described embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be construed as limiting the scope of the patent application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent application shall be subject to the attached claims.

Claims

1. A magnetron sputtering cathode device, characterized in that: include: A cover plate assembly, comprising a cathode cover plate and a dielectric window, wherein the cathode cover plate is disposed on the vacuum chamber, the cathode cover plate has a mounting hole extending therethrough, the mounting hole is connected to the vacuum chamber, and the dielectric window is disposed on the cathode cover plate and seals the mounting hole; A coil, disposed on the dielectric window and located outside the vacuum chamber; A shielding cover is arranged in the vacuum chamber and corresponds to the dielectric window, and the shielding cover has a radio frequency channel arranged in a bent manner; as well as The cathode assembly comprises a target material and a magnetic component. The target material is arranged in the vacuum chamber, and the magnetic component is arranged inside the target material.

2. The magnetron sputtering cathode device according to claim 1, characterized in that: The shielding cover comprises a supporting part and a shielding part, wherein the supporting part is connected to the cathode cover plate, and the shielding part is arranged on the supporting part and shields the dielectric window; Two ends of the radio frequency channel are located on two surfaces of the shielding part, so that the radio frequency channel is bent in the shielding part to connect the dielectric window and the vacuum chamber.

3. The magnetron sputtering cathode device according to claim 2, characterized in that: The shielding part includes a plurality of baffles, the plurality of baffles are staggered in the height direction and the vertical direction, and the projections of two adjacent baffles in the horizontal direction partially overlap; Two adjacent baffles are arranged vertically and horizontally to form the radio frequency channel.

4. The magnetron sputtering cathode device according to claim 3, characterized in that: Each of the baffles is at a different vertical height; Alternatively, some of the baffles are at a first vertical height, some of the baffles are at a second vertical height, and the vertical heights of two adjacent baffles are different.

5. The magnetron sputtering cathode device according to claim 3, characterized in that: The baffle includes a blocking portion and an overlapping portion, wherein the overlapping portion is arranged on at least one side of the blocking portion, and the overlapping portions of two adjacent baffles overlap in a horizontal direction.

6. The magnetron sputtering cathode device according to claim 3, characterized in that: The height difference between two adjacent baffles in the vertical direction is h, and the overlapping length between two adjacent baffles in the horizontal direction is w, wherein w / h>4.

7. The magnetron sputtering cathode device according to any one of claims 1 to 6, characterized in that: The magnetic member is deflected relative to the vertical direction of the target toward the direction where the coil is located; The angle between the magnetic part and the vertical direction ranges from 15° to 90°.

8. The magnetron sputtering cathode device according to any one of claims 1 to 6, characterized in that: The magnetron sputtering cathode device further includes at least one of the following features: The first item is that the mounting hole is arranged in a rectangular shape and extends along the length direction of the target material, and the shape of the dielectric window is adapted to the shape of the mounting hole; Second, the magnetron sputtering cathode device further comprises an insulating material, and the insulating material is filled in the radio frequency channel; Item 3, the magnetron sputtering cathode device further comprises a radio frequency source, the first end of the coil is connected to the radio frequency source, and the second end of the coil is grounded or connected to the vacuum chamber; Fourthly, the coil is hollow and a cooling medium flows in the coil; Item 5, the coil is a planar coil or a spiral coil; Item 6, the number of the coils is multiple and arranged in an array, and the potentials of the multiple coils are connected in parallel and / or in series; Item 7: The shielding cover is grounded.

9. A magnetron sputtering device, characterized in that: It comprises a vacuum housing, a bias device, a carrier plate and a magnetron sputtering cathode device as claimed in any one of claims 1 to 8; The cover plate assembly of the magnetron sputtering cathode device is covered on the vacuum housing to form a vacuum chamber, the carrier plate and the shielding cover and target material of the magnetron sputtering cathode device are arranged in the vacuum chamber, and the substrate to be coated is placed on the carrier plate; The biasing device is electrically connected to the carrier board.

10. A coating method, characterized in that: The coating method comprises: S1, after the vacuum chamber is evacuated to the ultimate vacuum, an inert gas and / or a process gas is introduced into the vacuum chamber; S2, turning on the sputtering power supply to stimulate the generation of sputtering plasma; S3, turning on the radio frequency source to stimulate the generation of inductively coupled plasma, so that the inductively coupled plasma is coupled with the sputtering plasma, thereby increasing the density of the sputtering plasma; S4, after the target material is sputtered, the target material particles detach from the surface of the target material, and the target material particles pass through the inductively coupled plasma and are collided by the inductively coupled plasma during movement, so that the target material particles are at least partially ionized to form target material ions, and then deposited on the surface of the substrate to be coated.

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