Sputtering cavity for magnetron sputtering equipment and magnetron sputtering method

Abstract

The invention discloses a sputtering cavity for magnetron sputtering equipment and a magnetron sputtering method, and relates to the technical field of magnetron sputtering, a plurality of target materials are arranged in the sputtering cavity, a magnet assembly is correspondingly arranged on the back of each target material, and each magnet assembly comprises a plurality of permanent magnets; the permanent magnets on each part of magnet assembly form a plurality of concentric magnet rings, the permanent magnets in each magnet ring are arranged in a homopolar manner, the polarities of the permanent magnets in two adjacent magnet rings are opposite, and during operation, a magnetic field formed by every two adjacent magnet rings enables an annular etching runway to be formed on the surface of the target material; a first rotating shaft is further arranged in the sputtering cavity, is connected with the magnet assemblies and drives the magnet assemblies to exchange positions; the method has the beneficial effects that the uniformity of a magnetic field acting on the target material can be improved, the shadow S of an etching runway is reduced, the utilization rate of the target material is increased, and the compactness of a film layer is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of magnetron sputtering, and in particular to a sputtering chamber for magnetron sputtering equipment and a magnetron sputtering method. Background Art

[0002] Magnetron sputtering is a physical vapor deposition technology widely used in the preparation of thin film materials. Its basic principle is to use high-energy particles to bombard the target material, sputter out the atoms or molecules on the target surface, and deposit them on the substrate to form a thin film. This technology is of great significance in the fields of materials science, electronic engineering, optoelectronic devices and coating technology.

[0003] Traditional planar magnetron sputtering uses multiple strong magnets to form a circular magnetic field layout, such as the magnet layout in the patent CN218812044U that has been granted by the Hefei Innovation Institute of Beijing University of Aeronautics and Astronautics. The N pole of magnet 32 ​​is close to the back of the target material, and the S pole of magnet 31 is close to the back of the target material. The arrangement of the N-pole magnet and the S-pole magnet forms a circular magnetic field distribution. In the figure, the direction of the magnetic field at the dotted position of the circular area between 32 and 31 is almost parallel to the surface of the target material. Therefore, more electrons move at this position, making the etching depth of the target material at the dotted position higher, while the magnetic field direction of the circular area where the magnet itself is located is almost perpendicular to the surface of the target material, and there are fewer moving electrons, so that the etching depth of the target material at the position of the magnet is lower. The difference in etching depth causes the target material to form an etching track when it is used.

[0004] The formation of etching tracks will not only result in poor uniformity of film thickness, but also lead to low utilization of target materials. Therefore, the solution to etching tracks has always been one of the important research directions of magnetron sputtering equipment.

[0005] In addition, Beijing North Huachuang Microelectronics Equipment Co., Ltd. has been granted patent CN113699495B, which adopts a magnet design with spiral distribution to reduce the difference in magnetic field distribution, so as to slow down the formation of etching tracks, thereby improving the utilization rate of target materials and the uniformity of sputtering. However, although this design has its advantages, its asymmetric spiral distribution may also bring some disadvantages, mainly including the following points: 1. Increasing target sputtering non-uniformity Uneven magnetic field distribution: Although the helical magnets slow down the formation of etching tracks to a certain extent, their asymmetry may lead to more uneven magnetic field distribution on the target surface. This uneven magnetic field distribution will cause significant differences in sputtering rates in different areas of the target, exacerbating the sputtering unevenness of the target.

[0006] Sputtering profile deformation: Uneven sputtering rate will cause the sputtering profile on the target surface to deform, forming a more complex sputtering profile, which will not only affect the uniformity of the S film, but may also shorten the service life of the target.

[0007] 2. Film quality deteriorates Uneven composition: Due to the uneven sputtering of the target material, the composition and density of the sputtered atoms or molecules may also be uneven when they are deposited on the substrate, thus affecting the quality and performance of the S film.

[0008] Increased structural defects: Uneven sputtering may also lead to more structural defects inside the film, such as holes and cracks, which will reduce the mechanical and optical properties of the film.

[0009] 3. Reduced sputtering efficiency Reduced target utilization: Uneven target sputtering causes some areas to be over-sputtered, while other areas are under-sputtered, resulting in a decrease in the overall target utilization. This not only increases production costs, but also causes a waste of resources.

[0010] Increased equipment maintenance costs: Due to problems such as uneven target sputtering and sputtering profile deformation, the equipment needs to be maintained and adjusted more frequently, which increases the maintenance cost and complexity of the equipment.

[0011] 4. Process stability deteriorates Fluctuation of process parameters: The asymmetry of magnetic field distribution and the non-uniformity of target sputtering may cause fluctuations in process parameters (such as sputtering rate, film thickness, etc.) during the sputtering process, affecting the stability and repeatability of the process.

[0012] Decreased product quality consistency: Fluctuations in process parameters will further lead to a decline in product quality consistency, affecting product market competitiveness and customer satisfaction.

[0013] In summary, although the helical magnet design improves the difference in magnetic field distribution in planar magnetron sputtering technology to a certain extent, its asymmetric helical distribution may also bring disadvantages such as increased target sputtering non-uniformity, reduced film quality, reduced sputtering efficiency and poor process stability. Therefore, in practical applications, it is necessary to make trade-offs and optimize the design according to specific circumstances. Summary of the invention

[0014] The object of the present invention is to provide a sputtering chamber and a magnetron sputtering method for a magnetron sputtering device in order to solve the above problems.

[0015] The present invention achieves the above-mentioned purpose through the following technical solutions: A sputtering chamber for magnetron sputtering equipment, wherein a plurality of target materials are arranged in the sputtering chamber, a magnet assembly is arranged correspondingly on the back of each target material, each magnet assembly comprises a plurality of permanent magnets, the permanent magnets on each magnet assembly form a plurality of concentric magnet rings, the permanent magnets in each magnet ring are arranged with the same polarity, and the permanent magnets in two adjacent magnet rings have opposite polarities, and during operation, the magnetic field formed by each two adjacent magnet rings causes the surface of the target material to form an annular etching track; A first rotating shaft is also provided in the sputtering chamber, and the first rotating shaft is connected to each of the magnet assemblies, and drives each of the magnet assemblies to exchange positions; The ring diameters of the magnet rings in each group of the magnet assemblies are different, so that the center lines of the etching tracks formed on the surface of the same target material after the positions of the magnet assemblies are interchanged do not overlap.

[0016] Preferably, the magnetic strengths of the permanent magnets are the same.

[0017] Preferably, after the magnet assemblies are interchanged, the spacings between the center lines of multiple etching tracks formed on the surface of the same target material are equal.

[0018] Preferably: two targets are arranged in the sputtering chamber, and a first magnet assembly and a second magnet assembly are respectively arranged correspondingly; wherein, after exchanging positions, in a direction perpendicular to the target surface, the magnet rings in the second magnetic field assembly are respectively arranged correspondingly on the center line of the etching track formed by the first magnetic field assembly on the target surface.

[0019] Preferably: three targets are arranged in the sputtering chamber, and three groups of magnet assemblies are arranged respectively; wherein, after exchanging positions, on the same target surface, the center lines of the etching tracks formed by any two groups of the magnet assemblies are located on both sides of the center lines of the etching tracks formed by another magnet assembly, and the spacing between the center lines of adjacent etching tracks is equal.

[0020] Preferably, the permanent magnets are at the same height.

[0021] Preferably, the magnet ring is a circular ring, and the etched track is a circular track.

[0022] Preferably: the sputtering chamber further comprises a second rotating shaft, the second rotating shaft is connected to a plurality of wafer trays, the wafer trays and the target materials are arranged in a one-to-one correspondence, and the second rotating shaft is used to drive the wafer trays to exchange positions.

[0023] A magnetron sputtering method, characterized in that: the above-mentioned sputtering chamber is used for operation, comprising the following steps: Step S1: Make the environment in the sputtering chamber meet the glow discharge conditions, apply voltage, and execute the first sputtering operation procedure; Step S2: turning off the voltage, rotating the first rotating bearing, rotating the first group of magnet assemblies to the original position of the second group of magnet assemblies, applying voltage, and executing the second sputtering operation procedure; Step S3: turning off the voltage, rotating the first rotating bearing, rotating the first group of magnet assemblies to the original position of the third group of magnet assemblies, applying voltage, and executing the third sputtering operation procedure; Step S4: Repeat steps S2-S3 until each of the magnet assemblies completes a 360° rotation; Step S5: stop applying voltage and close the sputtering chamber, and the operation is completed.

[0024] Preferably, for the same target material, the consumption of the target material in executing each sputtering operation procedure is the same.

[0025] Compared with the prior art, the beneficial effects of the present invention are: the present solution can improve the uniformity of the magnetic field acting on the target material, reduce the shadow of the etching track, increase the utilization rate of the target material and improve the density of the film layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0027] Figure 1 A cross-sectional view of a sputtering chamber for a magnetron sputtering device provided by an embodiment of the present invention is shown; Figure 2 A sputtering principle diagram is shown when two groups of magnet assemblies are arranged in a sputtering chamber of a magnetron sputtering device provided by an embodiment of the present invention.

[0028] Figure 3 A sputtering principle diagram is shown when three groups of magnet assemblies are arranged in a sputtering chamber of a magnetron sputtering device provided by an embodiment of the present invention.

[0029] The following are the descriptions of the reference numerals: 1. Upper cavity; 2. Lower cavity; 3. First rotating bearing; 4. Displacement mechanism; 5. Permanent magnet back plate; 6. Permanent magnet; 7. Fixed plate; 8. Target back plate; 9. Target; 10. Second rotating bearing; 11. Carrier; 12. Wafer tray; 13. First magnet assembly; 131. First S-pole magnet ring; 132. First N-pole magnet ring; 133. First etching runway; 14. Second magnet assembly; 141. Second S-pole magnet ring; 142. Second N-pole magnet ring; 14 3. Second etched track; 15. Third magnet assembly; 151. Third S-pole magnet ring; 152. Third N-pole magnet ring; 153. Third etched track; 16. Fourth magnet assembly; 161. Fourth S-pole magnet ring; 162. Fourth N-pole magnet ring; 163. Fourth etched track; 17. Fifth magnet assembly; 171. Fifth S-pole magnet ring; 172. Fifth N-pole magnet ring; 173. Fifth etched track; 34. First new etched track; 567. Second new etched track. DETAILED DESCRIPTION

[0030] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicate directions or positional relationships based on the directions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific direction, be constructed and operated in a specific direction, and therefore cannot be understood as limiting the present invention. In addition, the terms "first", "second", and the like are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first", "second", and the like may explicitly or implicitly include one or more of the features. In the description of the present invention, unless otherwise specified, "multiple" means two or more.

[0031] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installation", "connection" and "connection" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, or it can be the internal connection of two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood by specific circumstances.

[0032] The present invention will be further described below in conjunction with the accompanying drawings: The sputtering chamber of the magnetron sputtering equipment meets the operating conditions. The main components inside the chamber generally include a target material 9, a wafer tray 12 located opposite the surface of the target material 9, and a magnet group arranged behind the target material back plate 8. During operation, the controllable magnetic field formed by the magnet group constrains and accelerates the movement of particles, causing them to bombard the surface of the target material 9. The material sputtered by the kinetic energy of the particles will be deposited on the surface of the wafer to complete the coating deposition process. In this process, the material consumption on the surface of the target material 9 is related to the distribution of the magnetic field. Magnetic flux lines are formed between the N-pole magnet and the S-pole magnet. The position where the surface of the target material 9 is parallel to the magnetic flux lines has the fastest material consumption rate, and the position where the surface of the target material 9 is perpendicular to the magnetic flux lines has the slowest material consumption rate. After continuous operation, an etching track will be formed on the surface of the target material 9. The center line of the etching track is the position where the etching rate of the target material 9 material is the largest, which corresponds to the position where the magnetic flux lines are parallel to the surface of the target material 9. The etching track will significantly reduce the utilization rate of the target material 9.

[0033] This embodiment provides a sputtering chamber that can improve the utilization rate of the target material 9. The chamber has multiple target materials 9, and a set of magnet assemblies is provided for each target material 9, and a first rotating shaft connected to each magnet assembly is also provided.

[0034] Among them, Figure 2-3 As shown, the magnets of each set of magnet assemblies are arranged differently to form different controllable magnetic fields. The first rotating shaft periodically interchanges the positions of the magnet assemblies by rotating so that each target material 9 can be regularly affected by multiple sets of different controllable magnetic fields.

[0035] As one example, as shown in the figure, two types of magnets with different arrangements, a first magnet assembly 13 and a second magnet assembly 14, are provided in the sputtering chamber. Both the first magnet assembly 13 and the second magnet assembly 14 are formed by a plurality of permanent magnets 6 arranged in an array, for example, in a circular ring arrangement. To meet the magnetic field distribution design requirements of magnetron sputtering, for the first magnet assembly 13, the S-pole magnet (such as Figure 2 The first S-pole magnet ring 131 composed of the magnet for the planing surface line on the first magnet assembly 13 and the N-pole magnet (such as Figure 2 The first N-pole magnet ring 132 composed of the magnets without planing lines on the first magnet assembly 13 is alternately arranged. Due to the magnetic field distribution formed between the S-pole magnet 30 and the N-pole magnet 40, as shown in FIG. Figure 2 As shown, a first etching track 133 is formed between each two adjacent magnet rings. Figure 2 The second S-pole magnet ring 141 composed of the magnet with the planed surface line on the second magnet assembly 14 and the N-pole magnet (such as Figure 2The second N-pole magnet rings 142 composed of the magnets without planing lines on the second magnet assembly 14 are alternately arranged. Since the ring diameters of the second S-pole magnet rings 141 and the second N-pole magnet rings 142 are different from the first S-pole magnet rings 131 and the first N-pole magnet rings 132, as shown in FIG. Figure 2 As shown, the center line of the first etching track 133 formed by the first magnet assembly 13 and the center line of the second etching track 143 formed by the second magnet assembly 14 do not overlap with each other. Based on the non-overlapping etching track center lines, the first rotation axis is periodically rotated so that the first magnet assembly 13 and the second magnet assembly 14 alternately act on the same target material 9 in different time periods. Figure 2 As shown, a new etching track, i.e., the first new etching track 34, will be formed on the surface of the target material 9. The depth of the newly formed etching track will be less than the depth of the etching track formed by using only the first magnet assembly 13 or the second magnet assembly 14, i.e., the etching track is smoother, which can improve the utilization rate of the target material 9. It can be understood that the newly formed etching track has a corresponding etching track center line, and the corresponding position of the center line of the first new etching track 34 on the surface of the target material 9 is related to the position of the center line of the first etching track 133 and the center line of the second etching track 143. When the center line of the first etching track 133 and the center line of the second etching track 143 are arranged alternately, and the spacing between the center lines of each adjacent first etching track 133 and the center line of the second etching track 143 is equal, after the first magnet assembly 13 and the second magnet assembly 14 are interchanged, the newly formed etching track will be the smoothest, and the utilization rate of the target material 9 will be optimal.

[0036] like Figure 2 As shown, A2 is the magnetic field strength curve at A1, B2 is the magnetic field strength curve at B1, and B3 is the magnetic field strength curve at the position of the first new etched track 34.

[0037] As another example, Figure 3 As shown, three magnet assemblies with different magnet arrangements are arranged in the sputtering chamber, namely, the third magnet assembly 15, the fourth magnet assembly 16 and the fifth magnet assembly 17. The third magnet assembly 15, the fourth magnet assembly 16 and the fifth magnet assembly 17 are all formed by a plurality of permanent magnets 6 arranged in an array, for example, in a circular ring arrangement. To meet the magnetic field distribution design requirements of magnetron sputtering, for the third magnet assembly 15, the S-pole magnet (such as Figure 3 The third S-pole magnet ring 151 composed of the magnet with the planed surface line on the third magnet assembly 15 and the N-pole magnet (such as Figure 3 The third N-pole magnet ring 152 composed of the magnets without planing lines on the third magnet assembly 15 is alternately arranged. Due to the magnetic field distribution formed between the S-pole magnet and the N-pole magnet, as shown in FIG. Figure 3As shown, a third etching track 153 is formed between each adjacent third S-pole magnet ring 151 and third N-pole magnet ring 152. For the fourth magnet assembly 16, the S-pole magnet (such as Figure 3 The fourth S-pole magnet ring 161 composed of the magnet for the planing surface line on the fourth magnet assembly 16 and the N-pole magnet (such as Figure 3 The fourth N-pole magnet ring 162 formed by the fourth S-pole magnet ring 161 and the fourth N-pole magnet ring 162 are alternately arranged. Since the ring diameters of the fourth S-pole magnet ring 161 and the fourth N-pole magnet ring 162 are different from the third S-pole magnet ring 151 and the third N-pole magnet ring 152, the center line of the fourth etching track 163 formed by the fourth magnet assembly 16 and the center line of the third etching track 153 formed by the third magnet assembly 15 do not overlap. For the fifth magnet assembly 17, the S-pole magnet (such as Figure 3 The fifth S-pole magnet ring 171 composed of the magnet for the planing surface line on the fifth magnet assembly 17 and the N-pole magnet (such as Figure 3 The fifth N-pole magnet ring 172 composed of the magnets without planed lines on the fifth magnet assembly 17 is alternately arranged. Since the ring diameters of the fifth S-pole magnet ring 171 and the fifth N-pole magnet ring 172 are different from the third S-pole magnet ring 151 and the third N-pole magnet ring 152, and are also different from the fourth S-pole magnet ring 161 and the fourth N-pole magnet ring 162, Figure 3 As shown, the center line of the fifth etching track 173 formed by the fifth magnet assembly 17 does not overlap with the center line of the third etching track 153 formed by the third magnet assembly 15 and the fourth magnet assembly 16. Based on the non-overlapping etching track center lines, the first rotation axis is rotated periodically so that the three groups of magnet assemblies act on the same target material 9 alternately in different time periods. Figure 3 As shown, a new etching track, namely, the second new etching track 567, will be formed on the surface of the target material 9. The depth of the newly formed etching track will be less than the depth of the third etching track 153, the fourth etching track 163, and the fifth etching track 173 formed by using the third magnet assembly 15, the fourth magnet assembly 16, and the fifth magnet assembly 17 alone, that is, the etching track is smoother, which can improve the utilization rate of the target material 9. It can be understood that the newly formed second new etching track 567 has a corresponding etching track center line, and the corresponding position of the center line of the second new etching track 567 on the surface of the target material 9 is related to the position of the center line of the third etching track 153, the center line of the fourth etching track 163, and the center line of the fifth etching track 173. Figure 3As shown, when the center lines of the third etching track 153, the fourth etching track 163 and the fifth etching track 173 are arranged alternately in sequence, and the spacing between any two adjacent etching track center lines is equal, after the magnet assemblies are interchanged, the newly formed etching track will be the smoothest and the utilization rate of the target material 9 will be optimal.

[0038] like Figure 3 As shown, A2 is the magnetic field strength curve at A1, B2 is the magnetic field strength curve at B1, B3 is the magnetic field strength curve after the third magnet assembly 15 and the fourth magnet assembly 16 act on the target material 9 successively, C2 is the magnetic field strength curve at C1, and C3 is the magnetic field strength curve at the position of the second new etching runway 567.

[0039] It should be noted that the magnet rings given in the above examples are arranged in a circular ring shape, which helps to form a uniform periodically changing magnetic field. In practical applications, the magnet rings can also be arranged in a heart-shaped line or an elliptical ring shape to make the sputtering rate in the central area of ​​the target 9 equivalent to the sputtering rate in other areas.

[0040] In some embodiments, the permanent magnet 6 is formed by stacking a plurality of magnet sheets in sequence, for example, a plurality of cylindrical strong magnets are stacked in sequence. By adjusting the number of stacked magnets, the magnetic strength of the permanent magnet 6 can be adjusted accordingly. When all permanent magnets 6 have the same magnetic strength and the same height, it helps to form a uniform periodically changing magnetic field. In application, the strength of the permanent magnets 6 in the magnet ring can also be uneven. For example, in the magnet ring arranged in a circular ring, the magnetic force of several adjacent permanent magnets 6 located in the innermost magnet ring is weaker than that of other permanent magnets (by using magnet materials with lower magnetic strength or reducing the number of permanent magnets). At this time, the etching track will no longer be circular, and can have a similar effect to the heart-shaped line arrangement and the elliptical ring arrangement, so that the sputtering rate of the central area of ​​the target material 9 is equivalent to the sputtering rate of other areas.

[0041] As a specific implementation structure, as shown in the figure, the sputtering chamber includes an upper chamber 1 and a lower chamber 2, the upper chamber 1 and the lower chamber 2 are detachably connected, a fixed plate 7 is fixedly installed at the lower part of the upper chamber 1, a target material backing plate 8 is arranged in a circular array on the fixed plate 7, and target materials 9 are installed on the lower surface of the target material backing plate 8; a first rotating bearing 3 is arranged at the top of the upper chamber 1; a magnet assembly is arranged at the lower end of the first rotating bearing 3 corresponding to the target material 9, which drives the magnet assemblies to interchange positions, the magnet assembly includes a magnet backing plate 8 and a permanent magnet 6, and the magnet backing plate 5 includes a rotating motor and a plate body on the rotating motor.

[0042] A second rotating bearing 10 is provided on the bottom surface of the lower cavity 2; a supporting platform 11 is fixedly installed on the top of the second rotating bearing 10; a liftable wafer tray 12 is fixedly installed on the upper surface of the supporting platform 11 corresponding to the target material back plate 8, and the wafer tray 12 includes a hydraulic cylinder and a tray body on the movable end of the hydraulic cylinder, and the wafer is installed on the tray body. The height of the tray body can be adjusted to adjust the distance between the wafer and the surface of the target material 9, so as to facilitate the robot arm to take and place the wafer; the second rotating shaft 10 is used to drive the wafer tray 12 to interchange positions.

[0043] The bottom end of the first rotary bearing 3 is connected to the magnet assembly via a displacement mechanism 4; the displacement mechanism 4 includes a transverse and longitudinal ball screw pair to meet the requirements of the magnet assembly moving on the horizontal plane.

[0044] This embodiment also provides a magnetron sputtering method, comprising the following steps: Step S1: Make the environment in the sputtering chamber meet the glow discharge conditions, apply voltage, and execute the first sputtering operation procedure; Step S2: turning off the voltage, rotating the first rotating bearing 3, rotating the first set of magnet components to the original position of the second set of magnet components, applying voltage, and executing the second sputtering operation procedure; Step S3: turning off the voltage, rotating the first rotating bearing 3, rotating the first set of magnet components to the original position of the third set of magnet components, applying voltage, and executing the third sputtering operation procedure; Step S4: Repeat steps S2-S3 until each magnet assembly completes a 360° rotation; Step S5: stop applying voltage and close the sputtering chamber, and the operation is completed.

[0045] For the same target material 9 , the consumption of the target material 9 during each sputtering operation is the same.

[0046] The basic principles, main features and advantages of the present invention are shown and described above. Those skilled in the art should understand that the present invention is not limited to the above embodiments. The above embodiments and descriptions are only for illustrating the principles of the present invention. Without departing from the spirit and scope of the present invention, the present invention may have various changes and improvements, and these changes and improvements all fall within the scope of the present invention to be protected.

Claims

1. A sputtering chamber for a magnetron sputtering device, characterized in that: A plurality of target materials (9) are arranged in the sputtering chamber, and a magnet assembly is arranged on the back of each target material (9), and each magnet assembly comprises a plurality of permanent magnets (6). The permanent magnets (6) on each magnet assembly form a plurality of concentric magnet rings, and the permanent magnets (6) in each magnet ring are arranged with the same polarity, and the permanent magnets (6) in two adjacent magnet rings have opposite polarities. During operation, the magnetic field formed by each two adjacent magnet rings causes a ring-shaped etching track to be formed on the surface of the target material (9); A first rotating shaft is also provided in the sputtering chamber, and the first rotating shaft is connected to each of the magnet assemblies, and drives each of the magnet assemblies to exchange positions; The ring diameters of the magnet rings in each group of magnet assemblies are different, so that the center lines of the etching tracks formed on the surface of the same target material (9) do not overlap after the positions of the magnet assemblies are interchanged.

2. A sputtering chamber for a magnetron sputtering device according to claim 1, characterized in that: The magnetic strength of each of the permanent magnets (6) is the same.

3. The sputtering chamber for a magnetron sputtering device according to claim 1, characterized in that: After the magnet assemblies are interchanged, the spacing between the center lines of multiple etching tracks formed on the surface of the same target material (9) is equal.

4. The sputtering chamber for a magnetron sputtering device according to claim 3, characterized in that: Two target materials (9) are arranged in the sputtering chamber, and a first magnet assembly (13) and a second magnet assembly (14) are respectively arranged correspondingly; wherein, after the positions are interchanged, the magnet rings in the second magnetic field assembly are respectively arranged correspondingly on the center line of the etching track formed by the first magnetic field assembly on the surface of the target material (9) in a direction perpendicular to the surface of the target material (9).

5. The sputtering chamber for a magnetron sputtering device according to claim 3, characterized in that: Three target materials (9) are arranged in the sputtering chamber, and three groups of magnet assemblies are arranged correspondingly thereto; wherein, after the positions are interchanged, on the surface of the same target material (9), the center lines of the etching tracks formed by any two groups of the magnet assemblies are located on both sides of the center line of the etching tracks formed by another magnet assembly, and the spacing between the center lines of adjacent etching tracks is equal.

6. The sputtering chamber for a magnetron sputtering device according to claim 1, characterized in that: The heights of the permanent magnets (6) are flush.

7. The sputtering chamber for a magnetron sputtering device according to claim 1, characterized in that: The magnet ring is a circular ring, and the etched track is a circular track.

8. The sputtering chamber for a magnetron sputtering device according to claim 1, characterized in that: The sputtering chamber further comprises a second rotating shaft, the second rotating shaft being connected to a plurality of wafer trays (12), the wafer trays (12) being arranged in a one-to-one correspondence with the target materials (9), and the second rotating shaft being used to drive the wafer trays (12) to exchange positions.

9. A magnetron sputtering method, characterized in that: The sputtering chamber according to any one of claims 1 to 8 is used for operation, comprising the following steps: Step S1: Make the environment in the sputtering chamber meet the glow discharge conditions, apply voltage, and execute the first sputtering operation procedure; Step S2: turning off the voltage, rotating the first rotating bearing (3) to rotate the first group of magnet assemblies to the original position of the second group of magnet assemblies, applying voltage, and executing the second sputtering operation procedure; Step S3: turning off the voltage, rotating the first rotating bearing (3), rotating the first group of magnet assemblies to the original position of the third group of magnet assemblies, applying voltage, and executing the third sputtering operation procedure; Step S4: Repeat steps S2-S3 until each of the magnet assemblies completes a 360° rotation; Step S5: stop applying voltage and close the sputtering chamber, and the operation is completed.

10. A magnetron sputtering method according to claim 9, characterized in that: For the same target material (9), the consumption of the target material (9) is the same when executing each sputtering operation procedure.

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