Magnetron sputtering coating equipment

Abstract

The present invention provides a magnetron sputtering coating device, the device includes: a process chamber, a magnetron sputtering component, a carrier and a rotating magnetic field component, the magnetron sputtering component is located at the top of the process chamber, and is used to generate sputtering particles; the carrier is located in the process chamber, and is used to carry a wafer; the rotating magnetic field component includes two groups of Helmholtz coils orthogonally distributed on the periphery of the sputtering space between the magnetron sputtering component and the carrier, and a power supply electrically connected to the Helmholtz coils, and the rotating magnetic field component is used to generate a uniform magnetic field parallel to the surface of the wafer. The magnetron sputtering coating device provided by the present invention can effectively improve the uniformity of deep hole filling and improve the production yield by arranging two groups of Helmholtz coils orthogonally distributed on the periphery of the sputtering space to form a rotating magnetic field parallel to the surface of the wafer.

Description

Technical Field

[0001] The present invention relates to the technical field of integrated circuit manufacturing equipment, and in particular to a magnetron sputtering coating equipment. Background Art

[0002] In the current silicon micro-nanovia (TSV) process with high aspect ratio structure, there are some technical difficulties in the process of using plasma sputtering (PVD) to plate metal barrier layer and copper metal seed layer. One of them is the lack of effective control over the side wall film thickness of the microhole, resulting in a thin film thickness on the side wall.

[0003] Magnetron sputtering is a coating technology that uses the coating material as the target cathode, bombards the target material with argon ions, generates cathode sputtering, and sputters the target atoms onto the wafer to form a deposited layer. A proper amount of argon gas is filled in a high vacuum environment, and a DC voltage is applied between the cathode (columnar target or flat target) and the anode (coating chamber wall) to generate a magnetron glow discharge, ionize the argon gas, and the argon ions are accelerated by the cathode and bombard the cathode target surface, sputtering the target surface atoms and depositing them on the wafer surface to form a thin film.

[0004] In the TSV process, RF power is applied to the wafer carrier, which forms a negative surface voltage on the wafer surface. This negative voltage accelerates the ions ionized in the plasma in the plasma sheath and deposits them on the sidewalls and bottom of the micro-nanoholes. Since the ions move perpendicular to the wafer surface, most of the ions will be concentrated at the bottom of the silicon micro-nanoholes, and the film thickness of the sidewalls of the silicon micro-nanoholes will be very thin.

[0005] In the prior art, in order to improve the sputtering uniformity, a common practice is to add an auxiliary magnetic field near the target material to enhance the ionization rate of the target material. However, the inventors have found through a large number of experiments that it is difficult for the auxiliary magnetic field set near the target material to achieve a magnetic field parallel to the surface of the wafer, and the horizontal component of the magnetic field in some areas is very small and cannot play a role in deflecting charged ions. Therefore, it is still difficult to achieve good filling uniformity when used for deep hole filling.

[0006] It should be noted that the above introduction to the technical background is only for the convenience of providing a clear and complete description of the technical solutions of the present invention and for the convenience of understanding by those skilled in the art. It cannot be considered that the above technical solutions are well known to those skilled in the art simply because these solutions are described in the background technology section of the present invention. Summary of the invention

[0007] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a magnetron sputtering coating device to solve the problems that the existing magnetron sputtering coating equipment is difficult to achieve a magnetic field parallel to the wafer surface by adding an auxiliary magnetic field near the target material to improve the sputtering uniformity, and the horizontal component of the magnetic field in some areas is very small and cannot play a role in deflecting charged ions. Therefore, it is still difficult to achieve good filling uniformity when used for deep hole filling.

[0008] To achieve the above-mentioned purpose and other related purposes, the present invention provides a magnetron sputtering coating equipment, including: a process chamber, a magnetron sputtering component, a carrier and a rotating magnetic field component, wherein the magnetron sputtering component is located at the top of the process chamber and is used to generate sputtering particles; the carrier is located in the process chamber and is used to carry a wafer; the rotating magnetic field component includes two groups of Helmholtz coils orthogonally distributed on the periphery of the sputtering space between the magnetron sputtering component and the carrier, and a power supply electrically connected to the Helmholtz coils, and the rotating magnetic field component is used to generate a uniform magnetic field parallel to the surface of the wafer.

[0009] In an optional solution, the power supply includes a sine wave AC power supply.

[0010] In another optional solution, the power supply includes a direct current power supply, and the rotating magnetic field assembly further includes a moving part for driving the Helmholtz coil to rotate.

[0011] Optionally, the magnetron sputtering coating equipment further includes an electromagnetic shielding component disposed outside the Helmholtz coil, and the electromagnetic shielding component includes a shielding shell and a liquid metal material disposed in the shielding shell.

[0012] Optionally, the magnetron sputtering coating equipment further includes a lifting component for adjusting the up and down position of the Helmholtz coil and / or the carrier.

[0013] Optionally, the Helmholtz coil is arranged at the periphery of a process chamber, and the material of the process chamber includes non-magnetic stainless steel.

[0014] Optionally, each Helmholtz coil includes more than two coil sections, and the number of turns of each Helmholtz coil is adjusted by controlling the on-off current of each coil section, thereby adjusting the magnetic field strength.

[0015] In an optional solution, the Helmholtz coil includes a metal conductor layer and a conductive material layer coated on the surface of the metal conductor layer, and the conductivity of the conductive material layer increases with increasing temperature.

[0016] Optionally, the conductive material layer includes a transparent conductive oxide layer.

[0017] In another optional solution, the Helmholtz coil includes a metal conductor layer and a high thermal conductivity insulating material layer coated on the surface of the metal conductor layer.

[0018] As described above, the magnetron sputtering coating equipment provided by the present invention has the following beneficial effects: the magnetron sputtering coating equipment provided by the present invention can effectively improve the uniformity of deep hole filling and improve the production yield by arranging two groups of Helmholtz coils distributed orthogonally on the periphery of the sputtering space to form a rotating magnetic field parallel to the wafer surface. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 A schematic diagram of the cross-sectional structure of a magnetron sputtering coating device provided by the present invention in an example.

[0020] Figure 2 It is a schematic diagram of the top structure of the magnetron sputtering coating equipment of the present invention.

[0021] Figure 3 The schematic diagram is of two groups of Helmholtz coils in the magnetron sputtering coating device of the present invention, in which a sine wave current with a phase difference of 90 degrees is passed through the two groups of Helmholtz coils to generate a rotating magnetic field, wherein curve ① represents the current of the first Helmholtz coil and curve ② represents the current of the second Helmholtz coil.

[0022] Figure 4 It is a schematic diagram of the direction of the magnetic field generated by the magnetron sputtering coating device of the present invention when the current of the first Helmholtz coil is maximum and the current of the second Helmholtz coil is 0 at time point t1.

[0023] Figure 5 It is a schematic diagram of the direction of the magnetic field generated by the magnetron sputtering coating device of the present invention when the current of the first Helmholtz coil is zero and the current of the second Helmholtz coil is the negative maximum at time point t2.

[0024] Figure 6 It is a schematic diagram of the direction of the magnetic field generated by the magnetron sputtering coating device of the present invention when the current of the first Helmholtz coil is the most negative at time point t3 and the current of the second Helmholtz coil is zero.

[0025] Figure 7 It is a schematic diagram of the direction of the magnetic field generated when the current of the first Helmholtz coil is zero and the current of the second Helmholtz coil is maximum at time point t4 of the magnetron sputtering coating device of the present invention.

[0026] Figure 8 Schematic diagram of the movement direction of charged particles in the absence of a horizontal magnetic field generated by a Helmholtz coil.

[0027] Fig. 9 Schematic diagram of charged particles deposited into silicon micro-nanopores in the absence of a horizontal magnetic field.

[0028] Fig.10A schematic diagram of using the magnetron sputtering coating device of the present invention to deposit charged particles into silicon micro-nanopores under a magnetic field parallel to the wafer surface.

[0029] Fig.11 A schematic diagram of the cross-sectional structure of the magnetron sputtering coating device provided by the present invention in another example. DETAILED DESCRIPTION

[0030] The following describes the embodiments of the present invention through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention. For example, when describing the embodiments of the present invention in detail, for the sake of convenience, the cross-sectional view showing the device structure will not be partially enlarged according to the general proportion, and the schematic diagram is only an example, which should not limit the scope of protection of the present invention. In addition, in actual production, the three-dimensional dimensions of length, width and depth should be included.

[0031] For ease of description, spatially relative terms such as "under", "below", "below", "below", "above", "on", etc. may be used herein to describe the relationship of one element or feature shown in the drawings to other elements or features. It will be understood that these spatially relative terms are intended to encompass other orientations of the device in use or operation in addition to the orientation depicted in the drawings. In addition, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers, or one or more intervening layers may also be present.

[0032] In the context of the present invention, a structure in which a first feature is described as being "above" a second feature may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features are formed between the first and second features, such that the first and second features may not be in direct contact.

[0033] It should be noted that the diagrams provided in this embodiment are only schematic illustrations of the basic concept of the present invention, and the diagrams only show the components related to the present invention rather than the number, shape and size of the components in actual implementation. The type, quantity and proportion of each component in actual implementation may be changed at will, and the layout of the components may also be more complicated. In order to make the diagrams as concise as possible, not all structures are marked in the drawings.

[0034] Magnetron sputtering is a coating technology that introduces a magnetic field on the surface of the target cathode and uses the magnetic field to constrain charged particles to increase the plasma density and increase the sputtering rate. In the prior art, in order to improve the uniformity of coating, one method is to add an auxiliary magnetic field around the target material to enhance the ionization rate of the target material. For example, in the applicant's previous scheme, the ionization rate of the target material was increased by setting a Helmholtz coil around the target material. However, after a large number of experiments, it was found that it is difficult to achieve a magnetic field parallel to the surface of the wafer by setting a Helmholtz coil near the target material, and the horizontal component of the magnetic field in some areas is very small, which cannot play a role in deflecting charged ions. Therefore, it is still difficult to achieve good filling uniformity when used for deep hole filling. Another method is to set an auxiliary coil that can generate a vertical downward magnetic field on the periphery of the cavity to guide the sputtered particles to move vertically downward to the wafer surface. However, this method is only suitable for planar coating, and it is easy to cause the problem of thin deposition on the side wall of the deep hole when used for deep hole filling. For this reason, the inventor of this case has proposed an improvement plan after long-term research.

[0035] Specifically, Figure 1 and Figure 2 As shown, the present invention provides a magnetron sputtering coating device, which includes: a process chamber 11, a magnetron sputtering component, a carrier 13 and a rotating magnetic field component 16.

[0036] The magnetron sputtering assembly is located at the top of the process chamber 11 and is used to generate sputtered particles. The magnetron sputtering assembly generally includes a magnet 121 and a target 122 located below the magnet 121. The argon gas introduced into the process chamber 11 generates argon ions under the action of the electric current, which are accelerated to fly toward the cathode target 122 under the action of the electric field, and bombard the target surface with high energy, causing the target 122 to sputter and generate sputtered particles. The magnet 121 of the magnetron sputtering assembly can be a permanent magnet 121 and / or an electromagnet 121, and a cooling device can be provided to cool the magnet 121. In some examples, the target 122 and / or the magnet 121 can rotate.

[0037] The carrier 13 is located in the process chamber 11 and is used to carry the wafer 15. The space between the magnetron sputtering assembly and the carrier 13 constitutes a magnetron sputtering space, in which charged particles, i.e., charged plasma 17, are distributed. The distance between the magnetron sputtering assembly and the carrier 13 can be adjusted as needed. The carrier 13 is disc-shaped and can be fixed in the process chamber 11 by a support shaft 14 located at its bottom. Driven by a motor, the support shaft 14 can drive the carrier 13 to rotate and / or lift. A heating and / or cooling channel can be set inside the carrier 13. It can fix the wafer 15 based on the principle of electrostatic adsorption, or fix the wafer 15 by an edge ring set above the edge of the carrier 13. The carrier 13 is loaded with RF power, so that a negative surface voltage is formed on the surface of the wafer 15, which can guide the sputtered particles to accelerate and vertically incident on the surface of the wafer 15 of the carrier 13.

[0038] The rotating magnetic field assembly 16 includes two groups of Helmholtz coils and a power supply electrically connected to the Helmholtz coils. The two groups of Helmholtz coils are preferably arranged outside the process chamber 11, for example, by a support member (not shown) erected outside the process chamber 11, and the two groups of Helmholtz coils are orthogonally distributed outside the sputtering space. In this embodiment, for the convenience of description, the Helmholtz coil arranged along the X-axis direction is defined as the first Helmholtz coil 161, and the Helmholtz coil arranged along the Y-axis direction is defined as the second Helmholtz coil 162. That is, two groups of Helmholtz coils are symmetrically arranged around the process chamber 11, and each group of Helmholtz coils is composed of a pair of coaxial circular coils parallel to each other and connected, and the currents in the two coils are consistent in direction and size, and the distance between the coils is exactly equal to the radius of the circular coil, thereby generating a wider uniform magnetic field near the midpoint of its common axis, that is, near the midline of the sputtering space, and the magnetic field can be nearly parallel to the surface of the wafer 15.

[0039] In some examples, the power supply uses a sinusoidal AC power supply to generate a uniform and constant magnetic field. The principle is that since the two sets of coils are orthogonal, the magnetic fields they generate are also orthogonal at the center point of the coil but with a phase difference of 90°. Assuming that the current of the first Helmholtz coil 161 is A sin(wt), the magnetic field strength B1 is proportional to the current C sin(wt); the magnetic field B2 generated by the second Helmholtz coil 162 is C cos(wt), so the total magnetic field is B = sqrt( B1*B1+B2*B2) = C is a constant. Therefore, the magnetic field strength at the center point of the coil remains unchanged during rotation. Therefore, as Figure 3 As shown in the figure, when a sine wave current with a phase difference of 90° is passed through two sets of Helmholtz coils, the change in the direction of the magnetic field generated near the midpoint of the common axis of the coils can be referred to Figures 4 to 7 As shown. Figures 4 to 7 It can be seen that at time point t1, the current of the first Helmholtz coil 161 is maximum, and the current of the second Helmholtz coil 162 is 0, thereby generating a magnetic field in the first direction; at time point t2, the current of the first Helmholtz coil 161 is zero, and the current of the second Helmholtz coil 162 is negative maximum, thereby generating a magnetic field in the second direction; at time point t3, the current of the first Helmholtz coil 161 is negative maximum, and the current of the second Helmholtz coil 162 is zero, thereby generating a magnetic field in the third direction; at time point t4, the current of the first Helmholtz coil 161 is zero, and the current of the Helmholtz coil is maximum, thereby generating a magnetic field in the fourth direction, the first direction is opposite to the third direction, and is perpendicular to the second direction and the fourth direction. At other time points, as the current changes, the direction of the magnetic field will rotate in the same plane, but the magnetic field strength remains unchanged.

[0040] like Figure 8 As shown, in the absence of a horizontal magnetic field generated by a Helmholtz coil, charged particles, i.e., plasma 17, will form a negative RF self-bias on the wafer 15 due to the presence of the RF power of the RF power supply, and form an electric field in the sheath of the plasma 17. Under the action of their own gravity and the electric field of the plasma sheath, the charged particles are vertically incident on the surface of the wafer 15. Fig. 9 As shown, after these charged particles are incident on the silicon micro-nanopores with a high aspect ratio structure, most of them are deposited at the bottom of the silicon micro-nanopores, and contribute little to the sidewall deposition of the silicon micro-nanopores, thus causing the filling of the nanopores to be uneven with thin sidewalls.

[0041] In this embodiment, two groups of Helmholtz coils are symmetrically arranged outside the sputtering space, thereby forming a horizontal magnetic field parallel to the surface of the wafer 15 in the sputtering space. When a charged particle is subjected to a magnetic field horizontal to the wafer 15, it will exert a Lorentz force on the positive ions, and its magnitude is F∥ = qVxB, where q is the charge of the charged particle, V is the speed of the charged particle perpendicular to the surface of the wafer 15, and B is the magnetic field strength. The direction of the Lorentz force is perpendicular to the speed direction of the charged particle and parallel to the surface of the wafer 15. Fig.11 As shown, in the case of the Lorentz force F∥ and the plasma sheath electric field force F ⊥ Under the combined force, the charged particles deviate from the vertical incidence. Therefore, the charged particles can be directly incident on the sidewall of the silicon via at an inclined angle, increasing the amount of film deposition on the sidewall. Since the magnetic field is rotating, the direction of its Lorentz force also rotates, so the sidewall of the silicon via can be uniformly deposited in all directions, improving the uniformity of the coating.

[0042] According to the needs of the process, the activation time of the horizontal magnetic field can be flexibly set, such as enabling it at the beginning, that is, the Helmholtz coil is energized at the initial stage of the process deposition. In some other examples, in the initial stage of sputtering coating, no current is passed through the Helmholtz coil, so that the charged particles are incident in the vertical direction, accelerating the deposition on the bottom of the silicon through hole. When the deposition reaches the second stage (for example, the deposition film thickness reaches about one-third of the depth of the silicon through hole), the Helmholtz coil is energized to generate a horizontal magnetic field to enhance the deposition on the sidewall of the silicon through hole. Through such a setting, the filling efficiency can be improved while improving the uniformity of deep hole filling. In some examples, in order to improve the filling efficiency in the initial stage, an auxiliary coil (not shown) that can generate a vertical magnetic field can be added to the periphery of the process chamber 11 and / or above the magnetron sputtering assembly. The auxiliary coil and the Helmholtz coil are turned on alternately to fill the bottom and sidewall of the deep hole alternately, thereby improving the uniformity and efficiency of deep hole filling.

[0043] In some other examples, in order to generate a uniform rotating magnetic field, the power supply adopts a DC power supply, and the rotating magnetic field assembly 16 also includes a moving part for driving the Helmholtz coil to rotate. That is, a constant DC power supply is passed through the Helmholtz coil, and a uniform magnetic field is generated by driving the Helmholtz coil to rotate, which can also achieve the effect of improving the uniformity of the coating.

[0044] The upper and lower positions of the Helmholtz coils may be fixed. In some examples, the vertical distance between the horizontal magnetic field and the wafer 15 may be adjusted as needed, so the magnetron sputtering coating device further includes a lifting component for adjusting the upper and lower positions of the Helmholtz coils and / or the carrier 13. The lifting component may, for example, use a moving part including a cylinder.

[0045] The cavity of the existing magnetron sputtering equipment is mostly made of aluminum alloy. In this embodiment, in order to reduce the energy loss of the magnetic field, the material of the process cavity 11 is made of non-magnetic material, such as non-magnetic stainless steel including 304 stainless steel, which will not affect the magnetic field in the cavity. The inner surface of the process cavity 11 can be coated with an insulating material layer such as aluminum oxide or a baffle can be set.

[0046] In some examples, the number of turns of each Helmholtz coil is fixed. Under this setting, if the magnetic field strength needs to be adjusted, one method is to adjust the current. In other examples, each Helmholtz coil includes more than two sections of coils, and the number of turns of each Helmholtz coil is adjusted by controlling the current on and off of each section of the coil, thereby adjusting the magnetic field strength. The advantage of this setting is that in the prior art, in order to facilitate deep hole filling, the deep hole is usually made into an inverted trapezoidal structure with a top opening larger than the bottom opening. Due to the limitations of the etching process, the side wall slope of the deep hole may not be linear, or the inclination rate of each part of the deep hole side wall may not be exactly the same. Therefore, if the charged particles are always incident on the side wall of the deep hole at the same incident angle, it may cause local uneven deposition. In this case, the strength of the horizontal magnetic field is adjusted by adjusting the number of turns of the Helmholtz coil, so that the angle of the resultant force on the charged particles changes, which will help improve the filling uniformity. For example, in the early stage of deep hole filling, the side wall at the bottom of the deep hole is approximately vertical, so that the number of turns of the Helmholtz coil activated can be relatively small, and the horizontal magnetic field generated is relatively small, so that the charged particles are incident at a nearly vertical angle; as the lower part of the deep hole is filled, the number of turns of the energized Helmholtz coil is gradually increased, so that the horizontal magnetic field increases, and the inclination angle of the charged particles increases, so that the upper side wall of the deep hole can be better filled. Alternatively, when filling the upper part of the deep hole, the horizontal magnetic field and the aforementioned vertical magnetic field can be alternately activated (with an interval period of, for example, 5s-10s), which helps to further improve the uniformity of deep hole filling. The advantage of this method of adjusting the magnetic field strength by adjusting the number of coil turns is that it is more conducive to the stability of the equipment than the method of adjusting the coil current.

[0047] Most commonly used Helmholtz coils use an enameled wire structure, that is, insulating plastics such as PVC and polyethylene are coated on the surface of the metal conductor. In a preferred embodiment of the present invention, the Helmholtz coil includes a metal conductor layer and a conductive material layer coated on the surface of the metal conductor layer, and the conductivity of the conductive material layer increases with increasing temperature. The metal conductor layer is, for example, copper wire, and the conductive material layer is, for example, a transparent conductive oxide layer, such as an indium tin oxide layer. The transparent conductive oxide layer can be coated on the surface of the metal conductor layer through an electroplating process. The outside of the conductive material layer can be coated with an insulating plastic layer. The advantage of using a composite structure including a metal conductor layer and a conductive material layer coated on the surface of the metal conductor layer is that the metal conductor layer will generate a lot of heat when it is powered on for a long time, resulting in an increase in resistance, which will cause a decrease in magnetic field strength, and this magnetic field change is irregular, which is an uncontrollable factor for the process. In this embodiment, a conductive oxide layer such as indium oxide is added to the periphery of the traditional metal conductor layer. The conductive oxide layer has good thermal conductivity, and its resistance decreases after being heated, which can balance the increase in resistance of the metal conductor layer caused by heating, reduce the change in the overall conductivity of the Helmholtz coil, and improve the stability of the magnetic field.

[0048] In some other examples, the Helmholtz coil adopts a structure of a metal conductor layer and a high thermal conductivity insulating material layer coated on the surface of the metal conductor layer. The metal conductor layer is, for example, copper wire, and as an example of the high thermal conductivity insulating material layer, a ceramic material such as alumina or thermal conductive silicone grease can be used. Providing a high thermal conductivity insulating material layer on the surface of the metal conductor layer can enhance the heat dissipation of the Helmholtz coil and reduce the fluctuation of the magnetic field strength caused by overheating of the coil.

[0049] In some examples, such as Fig.11 As shown, the magnetron sputtering coating equipment also includes an electromagnetic shielding component 18 arranged on the outside of the Helmholtz coil. By setting the electromagnetic shielding component 18, the electromagnetic interference between the Helmholtz coil and other live parts can be reduced, and the hysteresis loss can be reduced. The electromagnetic shielding component 18 can be set as a plate-like structure whose area is not less than the plane area of ​​the Helmholtz coil. In a preferred example of the present invention, the electromagnetic shielding component 18 includes a shielding shell and a liquid metal material arranged in the shielding shell. The shielding shell can be, for example, a metal shell, and the liquid metal material inside it can be, for example, liquid gallium. The electromagnetic shielding component using such a composite structure can not only play a good electromagnetic shielding role, but also play a good heat dissipation role to avoid overheating of the Helmholtz coil. In addition, by utilizing the advantages of high plasticity of liquid metal, the shape of the electromagnetic shielding component can be more flexibly adjusted according to the surrounding conditions of the equipment, and the filling amount of liquid metal in different areas can be adjusted to strengthen the local electromagnetic shielding of some sensitive areas.

[0050] The magnetron sputtering coating device provided by the present invention can be used for the deposition of various metal films and metal oxide films, and is particularly suitable for deep hole deposition with a high aspect ratio.

[0051] In summary, the magnetron sputtering coating equipment provided by the present invention can effectively improve the uniformity of deep hole filling and increase the production yield by arranging two groups of Helmholtz coils distributed orthogonally around the sputtering space to form a rotating magnetic field parallel to the wafer surface. Therefore, the present invention effectively overcomes various shortcomings in the prior art and has a high industrial utilization value.

[0052] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed by the present invention shall still be covered by the claims of the present invention.

Claims

1. A magnetron sputtering coating device, characterized in that: include: A process chamber, a magnetron sputtering assembly, a carrier and a rotating magnetic field assembly, wherein the magnetron sputtering assembly is located at the top of the process chamber and is used to generate sputtering particles; The carrier is located in the process chamber and is used to carry the wafer; the rotating magnetic field assembly includes two groups of Helmholtz coils orthogonally distributed on the periphery of the sputtering space between the magnetron sputtering assembly and the carrier, and a power supply electrically connected to the Helmholtz coils, and the rotating magnetic field assembly is used to generate a uniform magnetic field parallel to the surface of the wafer.

2. The magnetron sputtering coating equipment according to claim 1, characterized in that: The power source includes a sine wave AC power source.

3. The magnetron sputtering coating equipment according to claim 1, characterized in that: The power supply includes a direct current power supply, and the rotating magnetic field assembly also includes a moving part for driving the Helmholtz coil to rotate.

4. The magnetron sputtering coating equipment according to claim 1, characterized in that: The magnetron sputtering coating device also includes an electromagnetic shielding component arranged outside the Helmholtz coil, and the electromagnetic shielding component includes a shielding shell and a liquid metal material arranged in the shielding shell.

5. The magnetron sputtering coating equipment according to claim 1, characterized in that: The magnetron sputtering coating device also includes a lifting component for adjusting the up and down positions of the Helmholtz coil and / or the carrier.

6. The magnetron sputtering coating equipment according to claim 1, characterized in that: The Helmholtz coil is arranged on the periphery of the process chamber, and the material of the process chamber includes non-magnetic stainless steel.

7. The magnetron sputtering coating equipment according to claim 1, characterized in that: Each Helmholtz coil includes more than two coil sections. The number of turns of each Helmholtz coil is adjusted by controlling the current on and off of each coil section, thereby adjusting the magnetic field strength.

8. The magnetron sputtering coating equipment according to claim 1, characterized in that: The Helmholtz coil comprises a metal conductor layer and a conductive material layer coated on the surface of the metal conductor layer, and the conductivity of the conductive material layer increases with increasing temperature.

9. The magnetron sputtering coating device according to claim 8, characterized in that: The conductive material layer includes a transparent conductive oxide layer.

10. The magnetron sputtering coating equipment according to claim 1, characterized in that: The Helmholtz coil comprises a metal conductor layer and a high thermal conductivity insulating material layer coated on the surface of the metal conductor layer.

Images