Etching device and etching process

Abstract

The invention provides an etching device which comprises a plurality of conductive coils, a first radio frequency power supply, a second radio frequency power supply, a magnet and a conductive platform deck, the conductive platform deck is provided with a bearing surface, the plurality of conductive coils are arranged on one side of the conductive platform deck and face the bearing surface, the conductive coils are electrically connected with the first radio frequency power supply, and the magnet is arranged on the first radio frequency power supply. The conductive coil is electrically connected with a first radio frequency power supply and used for ionizing gas introduced into the etching device and generating plasma, the conductive carrier is electrically connected with a second radio frequency power supply and used for increasing the moving speed of the plasma, and the magnet is arranged on the side, away from the conductive carrier, of the conductive coil. The etching device provided by the invention can be used for etching the to-be-etched parts with various sizes, the etching speed and the etching uniformity are good, the etching effect is good, and the use of the etched to-be-etched parts is facilitated. The invention further provides an etching process.

Description

Technical Field

[0001] The present application belongs to the field of etching technology, and specifically relates to an etching device and an etching process. Background Art

[0002] Plasma etching is a common form of dry etching and is widely used in semiconductor wafer processing. Due to the small size of semiconductor wafers, the working area of ​​plasma etching equipment is small and it is not suitable for processing large-sized products, which limits the use of plasma etching equipment. Summary of the invention

[0003] In view of this, the present application provides an etching device and an etching process.

[0004] In a first aspect, the present application provides an etching device, comprising a plurality of conductive coils, a first RF power supply, a second RF power supply, a magnet and a conductive carrier, wherein the conductive carrier has a carrying surface, the plurality of conductive coils are arranged on one side of the conductive carrier and face the carrying surface, the conductive coils are electrically connected to the first RF power supply and are used to ionize the gas passed into the etching device and generate plasma, the conductive carrier is electrically connected to the second RF power supply and is used to increase the moving speed of the plasma, and the magnet is arranged on a side of the conductive coil away from the conductive carrier.

[0005] In a second aspect, the present application provides an etching process, comprising:

[0006] Placing the workpiece to be etched on the carrying surface of the conductive carrier in the etching device of the first aspect;

[0007] introducing gas into the etching device;

[0008] Turning on the first radio frequency power source and the second radio frequency power source, so that the gas is plasmatized to form plasma;

[0009] The plasma etches the to-be-etched piece.

[0010] In the etching device provided by the present application, multiple conductive coils are electrically connected to the first RF power supply to plasmatize the gas entering the etching device to generate plasma. At the same time, the conductive carrier is electrically connected to the second RF power supply to accelerate the plasma. The set magnet can improve the etching uniformity, thereby producing an excellent etching effect, which is beneficial to the use of the etching device. At the same time, the etching process provided by the present application is simple to operate and has a good etching effect, which is beneficial to the application of the etched parts after etching. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] In order to more clearly illustrate the technical solutions in the implementation modes of the present application, the drawings required for use in the implementation modes of the present application will be described below.

[0012] Figure 1 A cross-sectional schematic diagram of an etching device provided in one embodiment of the present application.

[0013] Figure 2 A schematic diagram of the structures of three conductive coils provided in one embodiment of the present application.

[0014] Figure 3 A top view of a plurality of conductive coils provided in accordance with an embodiment of the present application.

[0015] Figure 4 A schematic cross-sectional view of an etching device provided in another embodiment of the present application.

[0016] Figure 5 A cross-sectional schematic diagram of an etching device provided in yet another embodiment of the present application.

[0017] Figure 6 A cross-sectional schematic diagram of an etching device provided in yet another embodiment of the present application.

[0018] Figure 7 A cross-sectional schematic diagram of an etching device provided in yet another embodiment of the present application.

[0019] Figure 8 A cross-sectional schematic diagram of an etching device provided in yet another embodiment of the present application.

[0020] Fig. 9 A schematic diagram of the etching process provided in one embodiment of the present application.

[0021] Fig.10 This is an electron microscope image of a glass piece made according to one embodiment of the present application.

[0022] Fig.11 for Fig.10 Laser scan of the glass part.

[0023] Fig.12 This is an electron microscope image of a glass piece made according to another embodiment of the present application.

[0024] Fig.13 for Fig.12 Laser scan of the glass part.

[0025] Fig.14 This is an electron microscope image of a glass piece made according to another embodiment of the present application.

[0026] Fig.15 for Fig.14 Laser scan of the glass part.

[0027] Description of labels:

[0028] Conductive coil-10, conductive carrier-20, carrying surface-21, first RF power supply-30, second RF power supply-40, magnet-50, etching chamber-60, first cover plate-61, second cover plate-62, side wall-63, through hole-64, cooling unit-70, etching device-100. DETAILED DESCRIPTION

[0029] The following are exemplary embodiments of the present application. It should be noted that, for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principles of the present application. These improvements and modifications are also considered to be within the scope of protection of the present application.

[0030] The disclosure below provides many different embodiments or examples to realize the different structures of the present application. In order to simplify the disclosure of the present application, the parts and settings of specific examples are described below. Of course, they are only examples, and the purpose is not to limit the present application. In addition, the present application can repeat reference numbers and / or reference letters in different examples, and this repetition is for the purpose of simplification and clarity, which itself does not indicate the relationship between the various embodiments and / or settings discussed. In addition, the various specific processes and material examples provided by the present application, but those of ordinary skill in the art can appreciate the application of other processes and / or the use of other materials.

[0031] See also Figure 1 , is a cross-sectional schematic diagram of an etching device provided in one embodiment of the present application, the etching device 100 includes a plurality of conductive coils 10, a first RF power supply 30, a second RF power supply 40, a magnet 50 and a conductive carrier 20, the conductive carrier 20 having a carrying surface 21, the plurality of conductive coils 10 are arranged on one side of the conductive carrier 20 and facing the carrying surface 21, the conductive coil 10 is electrically connected to the first RF power supply 30, and is used to ionize the gas passed into the etching device 100 and generate plasma, the conductive carrier 20 is electrically connected to the second RF power supply 40, and is used to increase the moving speed of the plasma, and the magnet 50 is arranged on the side of the conductive coil 10 away from the conductive carrier 20.

[0032] It is understandable that plasma is a macroscopic system in an unbound state composed of a large number of charged particles (including electrons, positive ions, negative ions) and neutral particles that are close to free movement, and exhibits a quasi-neutral collective effect. At present, the etching device 100 often uses plasma to operate, for example, it can etch a wafer. Due to the small size of the wafer, the etching area of ​​the etching device 100 is small, so it can only be used for etching of a smaller area of ​​the etched part, and cannot be used for etching of a larger area of ​​the etched part, which limits the use of the etching device 100. Therefore, the present application sets a plurality of conductive coils 10 and connects them to the first RF power supply 30, so that the gas introduced into the etching device 100 can be ionized to generate plasma; the plurality of conductive coils 10 increases the distribution area of ​​the plasma, which is beneficial for etching a large area of ​​the surface of the workpiece to be etched; at the same time, in order to avoid the problem of slow movement speed of the increased plasma, the conductive carrier 20 in the etching device 100 provided by the present application is connected to the second RF power supply 40 to generate an electric field, which can accelerate the movement of the plasma and help improve the etching effect. The setting of the magnet 50 can optimize the uniformity of the plasma, thereby improving the etching uniformity, obtaining an excellent etching effect, and facilitating the use of the workpiece to be etched after etching.

[0033] In one embodiment of the present application, the etching device 100 is used in glass etching. In the related art, the plasma reaction source used in the plasma dry etching process is classified into an inductively coupled plasma (ICP) source, a capacitively coupled plasma (CCP) source, etc., which is used in the etching process of semiconductor fields such as silicon wafers, silicon oxide wafers, and metal wafers. The etching device 100 has a small single etching operation area and is only applicable to the etching of the to-be-etched parts formed of a single material. The etching device 100 provided in the present application can achieve large-area etching operations by increasing the number of coils, and can be used in the etching of complex materials such as glass. Through the action of multiple coils electrically connected to the first RF power supply 30 and the magnet 50, the gas entering the etching device 100 is plasmatized, and the uniformity of the plasma is improved to form a large-area uniform plasma. The conductive carrier 20 connected to the second RF power supply 40 can accelerate the plasma, thereby quickly etching a large-area glass surface, achieving an etching effect with a high etching rate and high etching uniformity, and the etching glass has a high production capacity and a low preparation cost. At the same time, compared with chemical etching, the etching device 100 can achieve an etching process with good controllability, high repeatability of etching effects, and green environmental protection, which is conducive to the use of the etched glass. For example, the etched glass can be used in electronic devices and can be used as a shell of an electronic device, such as a cover plate, a battery cover, a middle frame, etc.

[0034] In the present application, a plurality of conductive coils 10 are electrically connected to the first radio frequency power supply 30. When powered on, the conductive coils 10 generate a high-frequency electromagnetic field. The gas in the etching device 100 is ionized under the action of the high-frequency electromagnetic field. The generated ions and electrons are accelerated in the high-frequency electromagnetic field and collide with neutral atoms to ionize more gas, thereby forming a plasma, which serves as a plasma source for etching in the etching device 100. By providing a plurality of conductive coils 10, the etching area is increased and the application scenarios of the etching device 100 are expanded. The number of conductive coils 10 can be selected as needed, such as providing 2, 3, 4, 5, 6, 7, 8, 9, 10 or 11 or more conductive coils 10. In one embodiment of the present application, the conductive coil 10 can be wound by a single or multiple conductive wires, and the conductive wires can be wound into a conductive coil 10 of a circular, square, rectangular, irregular shape, etc.; that is, the cross-sectional shape of the conductive coil 10 is circular, square, rectangular, irregular shape, etc. Please refer to Figure 2 , is a schematic diagram of the structure of three conductive coils provided in one embodiment of the present application, wherein the cross-section of the conductive coil 10 can be circular (a), square (b) or irregular (c). The number of turns of the conductive coil 10 can be selected as needed, such as the number of turns of the conductive coil 10 can be 3 turns, 4 turns, 5 turns, 6 turns, etc. In one embodiment, the shapes, number of turns and surface areas of the multiple conductive coils 10 are the same.

[0035] In one embodiment of the present application, a plurality of conductive coils 10 are arranged at intervals, so as to avoid the influence of adjacent conductive coils 10, which is conducive to the formation of plasma. The spacing between adjacent conductive coils 10 in the plurality of conductive coils 10 may be the same or different. In one embodiment of the present application, the spacing between adjacent conductive coils 10 is less than or equal to 10cm, which can avoid the influence of adjacent conductive coils 10, and at the same time ensure the density of the generated plasma and improve the etching effect. Specifically, the spacing between adjacent conductive coils 10 may be, but is not limited to, 0.5cm, 1cm, 2cm, 3cm, 4cm, 5cm, 6cm, 7cm, 8cm, 9cm or 10cm, etc. In one embodiment, the spacing between adjacent conductive coils 10 may be 0.5cm-5cm. In one embodiment, the spacing between adjacent conductive coils 10 may be 0.5cm-3cm.

[0036] In one embodiment of the present application, multiple conductive coils 10 are arranged in an array, which is conducive to uniform distribution of plasma and improves etching effect. In one embodiment of the present application, multiple conductive coils 10 are arranged in an array, and the spacing between adjacent conductive coils 10 is less than or equal to 10 cm. Please refer to Figure 3, which is a top view of multiple conductive coils provided in one embodiment of the present application, wherein multiple conductive coils 10 are arranged in an array, and the spacing between adjacent conductive coils 10 is equal, which is conducive to the generation and uniform distribution of plasma, and improves the etching uniformity and etching effect.

[0037] In one embodiment of the present application, the conductive coil 10 is a planar coil. That is, the conductive coil 10 is wound by a single or multiple wires, and the wires in the conductive coil 10 are all in the same plane. For example, Figure 2 The conductive coils 10 shown are all planar coils.

[0038] In the present application, the first RF power source 30 is a power source capable of generating high-frequency AC power. The conductive coil 10 is electrically connected to the first RF power source 30, so that the first RF power source 30 supplies power to the conductive coil 10, thereby generating a high-frequency electromagnetic field in the conductive coil 10 to ensure the formation of plasma. The conductive coil 10 is electrically connected to the first RF power source 30, that is, each conductive coil 10 is electrically connected to the first RF power source 30. It can be understood that Figure 1 This is a schematic diagram, which only shows the connection between the first RF power source 30 and one of the conductive coils 10. In fact, the first RF power source 30 is electrically connected to each conductive coil 10. Specifically, the first RF power source 30 and the conductive coil 10 can be connected by a wire to achieve electrical connection, but is not limited to it.

[0039] In one embodiment of the present application, the power applied by the first RF power supply 30 to each conductive coil 10 is less than or equal to 5kW, which is conducive to improving the uniformity of etching and obtaining a better etching effect. Specifically, the power applied by the first RF power supply 30 to each conductive coil 10 may be, but not limited to, less than or equal to 1kW, less than or equal to 2kW, less than or equal to 3kW, less than or equal to 4kW or less than or equal to 5kW, etc. In one embodiment of the present application, the power applied by the first RF power supply 30 to each conductive coil 10 may be 1kW-5kW, which is conducive to ensuring the plasma density, while improving the uniformity of etching, and can also be adapted to large-area etching operations. In one embodiment of the present application, the frequency of the first RF power supply 30 may be 12.56MHz-14.56MHz. In one embodiment, the frequency of the first RF power supply 30 may be 13.56MHz.

[0040] In the present application, the conductive carrier 20 has a carrying surface 21 for carrying the workpiece to be etched, and the conductive carrier 20 is electrically connected to the second RF power supply 40. When powered on, an electric field is generated, which can accelerate the movement of plasma and improve the etching effect, especially the etching effect of large-area etching operations. Specifically, the second RF power supply 40 and the conductive carrier 20 can be connected by a wire to achieve electrical connection, but is not limited to it.

[0041] In one embodiment of the present application, the orthographic projections of the plurality of conductive coils 10 on the bearing surface 21 completely cover the bearing surface 21, which is conducive to the movement of the generated plasma to various positions on the surface of the workpiece to be etched, ensuring the full progress of etching and improving the etching effect. It can be understood that since the conductive coil 10 is a hollow structure, the orthographic projections of the plurality of conductive coils 10 on the bearing surface 21 are the orthographic projections of the region where the plurality of conductive coils 10 are located on the bearing surface 21.

[0042] In one embodiment of the present application, the orthographic projection area of ​​the plurality of conductive coils 10 on the plane where the bearing surface 21 is located is greater than or equal to 0.15 m 2 , so that a large area of ​​etching can be performed. The orthographic projection area of ​​the multiple conductive coils 10 on the plane where the bearing surface 21 is located can be set according to the etching needs. In one embodiment of the present application, the orthographic projection area of ​​the multiple conductive coils 10 on the plane where the bearing surface 21 is located is greater than or equal to 0.2m 2 .

[0043] In one embodiment of the present application, the area of ​​the carrying surface 21 of the conductive carrier 20 is greater than or equal to 0.15 m 2 This is conducive to the stable placement of the workpiece to be etched, ensuring the progress of large-area etching operations, for example, it is conducive to the mass production of etching glass. Specifically, the area of ​​the carrying surface 21 of the conductive carrier 20 can be, but is not limited to, 0.15m 2 Above, 0.17m 2 Above, 0.19m 2 Above, 0.2m 2 Above, 0.23m 2 Above, 0.25m 2 Above, 0.28m 2 Above or 0.3m 2 Above and more.

[0044] In one embodiment of the present application, the power of the second RF power supply 40 is less than or equal to 10kW, which is conducive to improving the movement speed of the plasma and improving the etching rate. Specifically, the power of the second RF power supply 40 may be, but is not limited to, less than or equal to 1kW, less than or equal to 2kW, less than or equal to 5kW, less than or equal to 7kW, less than or equal to 8kW or less than or equal to 9kW, etc. In one embodiment of the present application, the power of the second RF power supply 40 is 1kW-7kW, which is conducive to improving the etching rate, and can also improve the uniformity of etching, so as to obtain better etching effect. In one embodiment of the present application, the frequency of the second RF power supply 40 can be 12.56MHz-14.56MHz. In one embodiment, the frequency of the second RF power supply 40 can be 13.56MHz.

[0045] In the present application, the conductive coil 10 is arranged between the conductive carrier 20 and the magnet 50. The area between the conductive coil 10 and the conductive carrier 20 is the area where the plasma is generated and moved, and the magnet 50 is arranged on the side of the conductive coil 10 away from the conductive carrier 20, which can play a role in homogenizing the plasma. Especially in large-area etching operations, the distribution range of the generated plasma is large. The magnet 50 can improve the plasma distribution density, thereby homogenizing the plasma and improving the uniformity of etching, thereby obtaining a better etching effect. In one embodiment of the present application, the magnet 50 is a permanent magnet, which ensures a stable magnetic field strength, thereby ensuring the homogenization of the plasma and helping to improve the uniformity of etching. In the present application, the magnetic field strength of the magnet 50 can be set as needed. In one embodiment of the present application, the magnetic field strength of the magnet 50 is less than 100Gs, so that the plasma can be homogenized without affecting the movement of the plasma, thereby ensuring the etching effect.

[0046] See also Figure 4 , is a cross-sectional schematic diagram of an etching device provided in another embodiment of the present application, wherein a first cover plate 61 is provided between the conductive coil 10 and the conductive carrier 20. By providing the first cover plate 61, the gas passing into the etching device 100 is prevented from directly contacting the conductive coil 10. Among them, the conductive coil 10 is arranged on the surface of the first cover plate 61 away from the conductive carrier 20, and the conductive coil 10 can be arranged in contact with the surface or on one side of the surface. The first cover plate 61 serves to separate the conductive coil 10 and the gas, but at the same time does not affect the plasma process. In one embodiment of the present application, the material of the first cover plate 61 may include quartz.

[0047] In one embodiment of the present application, the distance between the conductive carrier 20 and the first cover plate 61 is less than 10 cm, so as to ensure the etching effect of the plasma generated during the etching process on the workpiece to be etched. Specifically, the distance between the conductive carrier 20 and the first cover plate 61 can be, but is not limited to, 4 cm, 5 cm, 6 cm, 7 cm, 8 cm or 9 cm. In one embodiment, the distance between the conductive carrier 20 and the first cover plate 61 during the etching process is less than 10 cm.

[0048] See also Figure 5, is a cross-sectional schematic diagram of an etching device provided in another embodiment of the present application, wherein the etching device 100 includes an etching chamber 60, the etching chamber 60 has a containing space, the conductive carrier 20 is arranged in the containing space, and the conductive coil 10 is arranged outside the etching chamber 60. By setting the etching chamber 60, the gas introduced into the etching device 100 during the etching process can be received and accommodated to generate plasma, and the gas is prevented from contacting the conductive coil 10, and it is also convenient to set up a vacuum environment during the etching process, improve the free path of the plasma, and obtain a better etching effect. It can be understood that the magnet 50 is arranged outside the etching chamber 60. In one embodiment of the present application, the etching chamber 60 can be cylindrical, rectangular, cube, etc. In one embodiment of the present application, the second RF power supply is connected to the etching chamber and the conductive carrier, so that the upper electrode and the lower electrode are formed to achieve capacitive coupling.

[0049] See also Figure 6 , is a cross-sectional schematic diagram of an etching device provided in another embodiment of the present application, wherein the etching chamber 60 comprises a first cover plate 61, a second cover plate 62 and a side wall 63, wherein the first cover plate 61 and the second cover plate 62 are arranged opposite to each other, and the side wall 63 connects the first cover plate 61 and the second cover plate 62, and the conductive carrier 20 is arranged on the surface of the second cover plate 62 facing the first cover plate 61, and the conductive coil 10 is arranged on the side of the first cover plate 61 away from the second cover plate 62. Among them, the first cover plate 61, the second cover plate 62 and the side wall 63 are arranged to form an accommodating space. The introduction of the first cover plate 61 is as described above and will not be repeated here. In one embodiment of the present application, the conductive carrier 20 is arranged in contact with the surface of the second cover plate 62. In another embodiment of the present application, the etching device 100 further comprises a support member, which is arranged on the surface of the second cover plate 62 facing the first cover plate 61 and supports the conductive carrier 20, so that the conductive carrier 20 is not in direct contact with the surface of the second cover plate 62. Among them, the support member can be a telescopic mechanism, which is in an extended state during the etching process, so that the conductive carrier 20 is closer to the first cover plate 61, and is in a shortened state when not etching. In the present application, the second cover plate 62 can be a metal material. Specifically, the second cover plate 62 can be a corrosion-resistant metal material, such as titanium alloy, etc., which is conducive to the long-term use of the etching device 100. In the present application, the side wall 63 can be a metal material. Specifically, the side wall 63 can be aluminum. In one embodiment, the side wall 63 can be a radio frequency aluminum side wall 63. In the present application, the side wall 63 can be integrally formed and assembled with the first cover plate 61 and the second cover plate 62 to form an etching chamber 60.

[0050] In one embodiment of the present application, the etching chamber 60 is provided with a through hole 64, which can connect the outside of the etching chamber 60 with the accommodating space, so as to facilitate the introduction and extraction of gas during the etching process. The number and location of the through holes 64 can be selected as needed. For example, the number of the through holes 64 can be 1, 2, 3, 4 or 5 or more, and the through hole 64 can be provided on at least one of the first cover plate 61, the second cover plate 62 and the side wall 63. In one embodiment, the etching chamber 60 is provided with one or more through holes 64. Please refer to Figure 7 , is a cross-sectional schematic diagram of an etching device provided in yet another embodiment of the present application, wherein the etching chamber 60 has a through hole 64 , and the through hole 64 is arranged on the side wall 63 .

[0051] In one embodiment of the present application, the etching device 100 also includes a gas supply unit. The gas supply unit is used to pass gas into the etching device 100, so as to ensure the formation of plasma during the etching process. Specifically, the gas supply unit includes a gas source, and the type of gas can be selected according to the etching needs. In one embodiment of the present application, the gas supply unit is connected to the through hole 64 so that the accommodating space of the etching device 100 is connected to the gas supply unit to ensure that the gas passes into the accommodating space. In one embodiment, the through hole 64 connected to the gas supply unit is arranged on the first cover plate 61 or on the side wall 63 close to the first cover plate 61, which is conducive to the plasmaization of the gas passed into the etching device 100 and the formation of plasma.

[0052] In one embodiment of the present application, the etching device 100 further includes a gas extraction unit. The gas extraction unit can make the etching chamber 60 in a vacuum state, ensure the free path of the plasma, and facilitate the etching. At the same time, the gas in the etching device 100 after etching can also be extracted. In one embodiment of the present application, the gas extraction unit is connected to the through hole 64 so that the accommodating space of the etching device 100 is connected to the gas extraction unit. The position of the through hole 64 connected to the gas extraction unit can be selected as needed. For example, the through hole 64 connected to the gas extraction unit can be set on the second cover plate 62 or on the side wall 63 close to the second cover plate 62.

[0053] In one embodiment of the present application, the etching device 100 further includes a control unit, which is connected to the first RF power supply 30 and the second RF power supply 40 and is used to turn on or off the first RF power supply 30 and the second RF power supply 40. The control unit can independently control the first RF power supply 30 and the second RF power supply 40 to turn on or off, thereby realizing independent control of the first RF power supply 30 and the second RF power supply 40.

[0054] See also Figure 8, is a cross-sectional schematic diagram of an etching device provided in another embodiment of the present application, wherein the etching device 100 further includes a cooling unit 70, and the cooling unit 70 is used to cool the conductive carrier 20, thereby ensuring that the temperature of the part to be etched during the etching process is not too high and does not affect the performance of the part to be etched. In one embodiment of the present application, the cooling unit 70 is disposed on the side of the conductive carrier 20 away from the bearing surface 21. Specifically, the conductive carrier may be disposed in direct contact with the cooling device, or may not be in direct contact with the cooling device. In one embodiment, the cooling device may be a cooling water circulation device, that is, the heat of the conductive carrier 20 is taken away by running water to achieve a cooling effect.

[0055] The present application also provides application of an etching device in glass etching, wherein the etching device includes the etching device 100 in any one of the above embodiments.

[0056] This application also provides an etching process. Fig. 9 , is a schematic diagram of the etching process provided in one embodiment of the present application, including:

[0057] S101: placing a workpiece to be etched on the carrying surface of a conductive carrier in the etching device of any of the above embodiments.

[0058] S102: Introducing gas into the etching device.

[0059] S103: Turn on the first RF power source and the second RF power source to plasmatize the gas.

[0060] S104: plasma etching the workpiece.

[0061] The present application adopts the above-mentioned etching device 100 for etching, which can be applicable to various etching operation areas, especially large-area etching, and has a fast etching rate, high anisotropy, small etching damage, and good etching uniformity during the etching process, and can obtain products with excellent etching effects.

[0062] In S101, the workpiece to be etched is placed on the carrying surface 21. In one embodiment of the present application, the workpiece to be etched is glass. Specifically, the glass may be, but is not limited to, high-aluminum glass, alumino-borosilicate glass, etc. The surface area to be etched in the workpiece to be etched can be selected as needed. The etching device 100 provided in the present application can realize large-area etching operations and has excellent etching efficiency.

[0063] In one embodiment of the present application, the part to be etched is placed in front of the etching device 100, and a mask is also provided on the etching surface of the part to be etched, so that the surface of the part to be etched after etching is conducive to the formation of the desired morphology. It can be understood that the surface of the part to be etched covered by the mask will not contact the plasma, and thus will not be etched, while the surface of the part to be etched not covered by the mask will contact the plasma to achieve etching, so that after etching, the surface of the part to be etched has an etched part and an unetched part, thereby forming different patterns, improving its appearance effect, and being more conducive to its use. Of course, if it is necessary to etch the entire area of ​​the etching surface of the part to be etched, there is no need to provide a mask, and the shape of the mask can be designed according to the surface morphology of the part to be etched after etching. In one embodiment, a photoresist can be provided on the surface of the part to be etched, and a mask is formed after curing, exposure and development.

[0064] In S102, gas is introduced into the etching device 100. The type of gas can be selected according to the etching needs. In one embodiment of the present application, the gas includes at least one of BCl3, CHF3, CF6, Ar and O2, which is conducive to achieving a high etching rate, especially high-speed etching and uniform etching of glass. In one embodiment of the present application, the gas purity can be greater than or equal to 99.9%, which is conducive to obtaining a better etching effect.

[0065] In one embodiment of the present application, before the gas is introduced, the etching device 100 is also evacuated. In one embodiment of the present application, the exhaust device is turned on to make the etching chamber 60 in a vacuum state. In one embodiment of the present application, the vacuum degree of the etching chamber 60 can be 0.001Pa-100Pa. Specifically, the vacuum degree of the etching chamber 60 can be but not limited to 0.01Pa, 0.1Pa, 1Pa, 10Pa, 30Pa, 50Pa, 75Pa or 90Pa, etc. In one embodiment, before the gas is introduced, the vacuum degree of the etching chamber 60 can be 0.001Pa-0.01Pa. In another embodiment, after the gas is introduced, the vacuum degree of the etching chamber 60 can be 0.01Pa-100Pa.

[0066] In S103, by turning on the first RF power source 30, the conductive coil 10 generates a high-frequency electromagnetic field, and the gas is plasmatized to form plasma; the magnet 50 is set to homogenize the plasma, and after turning on the second RF power source 40, an electric field is generated to accelerate the movement of the plasma. The first RF power source 30 and the second RF power source 40 can be turned on at the same time or one after another.

[0067] In S104, plasma is generated, moved, homogenized and accelerated under the action of the conductive coil 10, the conductive carrier 20 and the magnet 50, bombarding the surface of the part to be etched, thereby achieving etching. In one embodiment of the present application, the etching speed is 100nm / s to 1μm / s. Specifically, the etching speed can be but is not limited to 150nm / s, 200nm / s, 400nm / s, 500nm / s, 750nm / s, 800nm / s or 900nm / s, etc. The etching process provided in the present application is not only applicable to a variety of etching operation areas, even large-area etching operation areas, but also has a high etching rate, high etching efficiency, good etching uniformity, and good etching effect, which is conducive to the use of the part to be etched after etching.

[0068] In one embodiment of the present application, the temperature of the etching chamber 60 during etching is less than 100°C, thereby ensuring the service life of the etching device 100 and the part to be etched. In one embodiment of the present application, the temperature of the conductive carrier 20 during etching is less than 50°C, thereby ensuring the performance of the part to be etched. In one embodiment of the present application, the cooling unit 70 is turned on during the etching process to reduce the temperature of the conductive carrier 20 during the etching process. Specifically, the cooling unit 70 can be turned on before the gas is introduced.

[0069] In one embodiment of the present application, the uniformity deviation of etching is less than 1%. Specifically, the uniformity deviation of etching is calculated by the difference in etching depth of the surface of the etched part after etching. The present application improves the uniformity of plasma through the magnet 50 to obtain an etching effect with good etching uniformity, which is beneficial to the use of the etched part.

[0070] It can be understood that the etching device 100 provided in the present application can also clean the workpiece to be etched or the workpiece to be etched after etching by using a cleaning gas, integrating the functions of cleaning and etching, and is an integrated cleaning and etching device.

[0071] In one embodiment of the present application, the glass to be etched with a mask is placed in the etching device of any of the above embodiments, the etching chamber is evacuated and the cooling unit is turned on, and the cooling water temperature is 18°C ​​to 22°C. When the vacuum degree reaches 0.001Pa, Ar, BCl3 and CHF3 (flow ratio is 120:15:15) are introduced, and when the vacuum degree reaches 1Pa to 3Pa, the first RF power supply is turned on, and the power applied to each conductive coil by the first RF power supply is 5kW. The conductive coils are arranged as follows: Figure 3As shown, the plasma is excited to form. The second RF power supply is connected to the etching chamber and the conductive carrier. The second RF power supply is turned on to form an upper electrode and a lower electrode. The power of the upper electrode is 2kW, and the power of the lower electrode is 1.5kW. The plasma is accelerated and homogenized under the action of the permanent magnet. After etching for 30 minutes, the gas is changed to Ar and O2 (the flow ratio is 1:1), and the glass surface is cleaned. However, the gas supply is stopped, and the first RF power supply and the second RF power supply are turned off. After exhausting, the etched glass is taken out to obtain a glass piece. By setting different mask shapes, glass pieces with different morphologies are obtained, such as Figures 10 to 15 As shown, Fig.10 This is a scanning electron microscope (SEM) image of a glass piece prepared according to one embodiment of the present application. Fig.11 for Fig.10 Laser scan of the glass part; Fig.12 This is an electron microscope image of a glass piece made according to another embodiment of the present application. Fig.13 for Fig.12 Laser scan of the glass part; Fig.14 This is an electron microscope image of a glass piece made according to another embodiment of the present application. Fig.15 for Fig.14 The laser scanning image of the glass piece in the figure; the electron microscope image shows the surface morphology of the glass piece, and the laser scanning image shows the thickness of the glass piece at different positions. The etching device and etching process can be used to produce glass pieces with different morphologies and different areas, and the etching uniformity is good, the etching rate is fast, and the preparation efficiency is high, which is conducive to its use in electronic equipment.

[0072] The above is a detailed introduction to the contents provided in the implementation mode of the present application. This article explains and illustrates the principles and implementation modes of the present application. The above explanation is only used to help understand the method and core idea of ​​the present application. At the same time, for those skilled in the art, according to the idea of ​​the present application, there will be changes in the specific implementation mode and application scope. In summary, the contents of this specification should not be understood as limiting the present application.

Claims

1. An etching device, characterized in that: The etching device includes multiple conductive coils, a first radio frequency power supply, a second radio frequency power supply, a magnet and a conductive carrier, the conductive carrier has a carrying surface, the multiple conductive coils are arranged on one side of the conductive carrier and face the carrying surface, the conductive coils are electrically connected to the first radio frequency power supply, and are used to ionize the gas passed into the etching device and generate plasma, the conductive carrier is electrically connected to the second radio frequency power supply, and is used to increase the moving speed of the plasma, and the magnet is arranged on the side of the conductive coil away from the conductive carrier.

2. The etching device according to claim 1, characterized in that: The plurality of conductive coils are arranged at intervals, and the spacing between adjacent conductive coils is less than or equal to 10 cm.

3. The etching device according to claim 1, characterized in that: The orthographic projections of the plurality of conductive coils on the carrying surface completely cover the carrying surface.

4. The etching device according to claim 1, characterized in that: The orthographic projection area of ​​the plurality of conductive coils on the plane where the bearing surface is located is greater than or equal to 0.15 m 2 .

5. The etching device according to claim 1, characterized in that: The conductive coil is a planar coil.

6. The etching device according to claim 1, characterized in that: The power of the first RF power source applied to each of the conductive coils is less than or equal to 5 kW; The power of the second RF power source is less than or equal to 10 kW.

7. The etching device according to claim 1, characterized in that: The magnetic field strength of the magnet is less than 100 Gs.

8. The etching device according to claim 1, characterized in that: The etching device comprises an etching chamber having a containing space, the conductive carrier is arranged in the containing space, and the conductive coil is arranged outside the etching chamber.

9. The etching device according to claim 8, characterized in that: The etching chamber comprises a first cover plate, a second cover plate and a side wall, the first cover plate and the second cover plate are arranged opposite to each other, the side wall connects the first cover plate and the second cover plate, the conductive carrier is arranged on the surface of the second cover plate facing the first cover plate, and the conductive coil is arranged on the side of the first cover plate away from the second cover plate; The distance between the conductive carrier and the first cover plate is less than 10 cm; The material of the first cover plate includes quartz.

10. An etching process, characterized in that: include: Placing the workpiece to be etched on the carrying surface of the conductive carrier in the etching device according to any one of claims 1 to 9; introducing gas into the etching device; Turning on the first radio frequency power source and the second radio frequency power source, so that the gas is plasmatized to form plasma; The plasma etches the to-be-etched piece.

11. The etching process according to claim 10, characterized in that: The gas includes at least one of BCl3, CHF3, CF6, Ar and O2; The etching speed is 100 nm / s to 1 μm / s.

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