Thin film deposition device and thin film deposition method

Abstract

The invention discloses a thin film deposition device and a thin film deposition method, and belongs to the field of thin film deposition. The chamber is used for accommodating the wafer bearing device and depositing a thin film on the surface of the wafer; the wafer bearing device comprises a main shaft, a cantilever beam, a driving device and a sample disc; the sample disc is used for placing a wafer; the first end of the driving device is connected with the sample disc and used for driving the sample disc to swing up and down and rotate around the center of the sample disc; the second end of the driving device is connected with the cantilever beam which is connected with the main shaft and used for driving the sample disc to revolve around the main shaft. The wafer can be driven to rotate, the wafer can be driven to revolve around the main shaft along with the cantilever beam, in addition, the up-and-down swinging function of the sample disc is added to drive the wafer to swing up and down, so that when thin film deposition is carried out on the table-board structure on the surface of the wafer, the uniformity of a thin film covering the table-board structure can be effectively improved, and the film deposition efficiency is improved. And the performance of the device and the working reliability are improved.

Description

Technical Field

[0001] The present application relates to the field of thin film deposition, and in particular to a thin film deposition device and a thin film deposition method. Background Art

[0002] With the development of HgCdTe infrared focal plane detector technology, dark current reduction is an important direction for improving the performance of infrared focal plane devices, and p-on-n devices are an important development direction for reducing device dark current. At present, the scale of device arrays continues to increase, the pixel pitch continues to decrease, and high-temperature working devices are developing rapidly. Among them, p-on-n devices based on molecular beam epitaxy (MBE) technology have become one of the development directions. The schematic diagram of its device structure is shown in the figure below. Figure 1 As shown, in this structure, a mesa structure is arranged on the surface of the substrate 11; the mesa structure includes an n-type layer 12 and a p-type layer 13 arranged in sequence along the thickness direction, and a passivation layer 14 is arranged on the surface of the mesa structure; the protruding part of the mesa structure is a pixel, and a P-type contact electrode 15 is arranged on the surface of the pixel.

[0003] Sidewall passivation is a key preparation process to bring out the performance advantages of the device. When the center distance of the pixel is reduced to less than 10 microns, to ensure the performance of the device, the table pixel needs a high duty cycle, that is, the gap between the pixels must have a higher aspect ratio. Therefore, the passivation film layer on the sidewall is required to be consistent with the passivation film layer on the surface in composition, thickness and density. In short, for mercury cadmium telluride infrared detectors, the quality of the passivation film layer will affect the final performance of the device.

[0004] However, when existing equipment is passivating the mesa structure, the passivation film layer on the side wall is thinner than the passivation film layer on the plane, and the step coverage is uneven, resulting in a large leakage current on the side wall of the mesa structure, which increases the device noise equivalent temperature difference (NETD) and response non-uniformity, affecting device performance at the least and causing device failure at the worst, making the detector unable to work normally. Summary of the invention

[0005] The purpose of the present application is to provide a thin film deposition device and a thin film deposition method, so as to effectively avoid the problem of inconsistent thickness between the surface of the mesa structure and the sidewall passivation layer, improve the passivation consistency and thus improve the device performance and yield rate.

[0006] To achieve the above-mentioned purpose, the present application provides a thin film deposition device, comprising: a chamber and a wafer carrying device;

[0007] The chamber is used to accommodate the wafer carrying device and deposit a thin film on the surface of the wafer;

[0008] The wafer carrying device includes a main shaft, a cantilever beam, a driving device and a sample tray; the sample tray is used to place the wafer; the first end of the driving device is connected to the sample tray, and is used to drive the sample tray to swing up and down and rotate around the center of the sample tray; the second end of the driving device is connected to the cantilever beam, and the cantilever beam is connected to the main shaft, and is used to drive the sample tray to revolve around the main shaft.

[0009] Optionally, the thin film deposition device further includes: a control unit, the control unit is used to set the movement parameters of the sample plate according to the pixel size and aspect ratio of the wafer surface table structure, the movement parameters including the revolution speed, the rotation speed, the swing angle, and the swing frequency;

[0010] After the movement parameters are set, setting the thin film deposition process parameters of the wafer;

[0011] storing the movement parameters and the thin film deposition process parameters in corresponding programs;

[0012] Call the program.

[0013] Optionally, the thin film deposition device further comprises: a temperature control device; the temperature control device is used to introduce a temperature control medium and / or gas into the transmission channel to control the temperature of the sample plate and the wafer by heat conduction;

[0014] A first transmission channel is arranged inside the main shaft, a second transmission channel is arranged inside the cantilever beam, and a third transmission channel is arranged inside the driving device; the first transmission channel, the second transmission channel and the third transmission channel are connected in sequence to form the transmission channel; one end of the third transmission channel passes through the sample disk along the thickness direction of the sample disk.

[0015] Optionally, the main shaft is connected to the center of the cantilever beam; two ends of the cantilever beam are respectively connected to a driving device, and the two driving devices are symmetrical about the main shaft.

[0016] Optionally, the driving device includes a swing mechanism and a rotating mechanism; the rotating mechanism is connected to the cantilever beam to drive the sample disk to rotate around the center of the sample disk; the swing mechanism is connected to the rotating mechanism to drive the sample disk to swing up and down.

[0017] To achieve the above objectives, the present application also provides a thin film deposition method, comprising:

[0018] The wafer is transferred to a sample tray in a chamber; the chamber is used to accommodate the wafer carrying device; the wafer carrying device comprises a spindle, a cantilever beam, a driving device and the sample tray; a first end of the driving device is connected to the sample tray; a second end of the driving device is connected to the cantilever beam, and the cantilever beam is connected to the spindle;

[0019] Thin film deposition is performed on the wafer in the chamber, and during the thin film deposition process, the driving device drives the sample disk to swing up and down and rotate around the center of the sample disk, and the cantilever beam drives the sample disk to revolve around the main axis.

[0020] Optionally, after transferring the wafer to the sample plate in the chamber, the method further includes:

[0021] Turn on the temperature control device and set it up, and introduce a temperature control medium and / or gas into the transmission channel to control the temperature of the sample disk and the wafer by heat conduction; a first transmission channel is provided inside the spindle, a second transmission channel is provided inside the cantilever beam, and a third transmission channel is provided on the driving device; the first transmission channel, the second transmission channel and the third transmission channel are connected in sequence to form the transmission channel; one end of the third transmission channel passes through the sample disk along the thickness direction of the sample disk.

[0022] Optionally, the thin film deposition is performed on the wafer in the chamber, and during the thin film deposition, the sample disk is driven to swing up and down and rotate around the center of the sample disk by the driving device, and the sample disk is driven to revolve around the main axis by the cantilever beam, including:

[0023] According to the pixel size and aspect ratio of the mesa structure on the surface of the wafer, the movement parameters of the sample plate are set, and the movement parameters include the revolution speed, the rotation speed, the swing angle, and the swing frequency;

[0024] After the movement parameters are set, setting the thin film deposition process parameters of the wafer;

[0025] storing the movement parameters and the thin film deposition process parameters in corresponding programs;

[0026] The program is called to perform thin film deposition on the wafer in the chamber, and during the thin film deposition process, the sample disk is driven by the driving device to swing up and down and rotate around the center of the sample disk, and the sample disk is driven by the cantilever beam to revolve around the main axis.

[0027] Optionally, before transferring the wafer to the sample plate in the chamber, the method further includes:

[0028] Determining the size of the chamber according to the type of film layer deposited on the surface of the wafer;

[0029] The number of the cantilever beams and the number of the sample trays are determined according to the size of the chamber.

[0030] Optionally, transferring the wafer to a sample plate in the chamber includes:

[0031] Transferring the wafer to the sample plate in the chamber through a transfer chamber;

[0032] Correspondingly, the thin film deposition is performed on the wafer in the chamber, and during the thin film deposition, the sample disk is driven to swing up and down and rotate around the center of the sample disk by the driving device, and the sample disk is driven to revolve around the main axis by the cantilever beam, and further includes:

[0033] After the deposition is completed, the wafer is returned to room temperature and then transferred to the transfer chamber and taken out.

[0034] A thin film deposition device provided in the present application includes: a chamber and a wafer supporting device; the chamber is used to accommodate the wafer supporting device and deposit a thin film on the surface of the wafer; the wafer supporting device includes a main shaft, a cantilever beam, a driving device and a sample tray; the sample tray is used to place the wafer; the first end of the driving device is connected to the sample tray, and is used to drive the sample tray to swing up and down and rotate around the center of the sample tray; the second end of the driving device is connected to the cantilever beam, and the cantilever beam is connected to the main shaft, and is used to drive the sample tray to revolve around the main shaft.

[0035] Obviously, in addition to driving the wafer to rotate, the wafer carrier device in the present application can also drive the wafer to revolve around the main axis along with the cantilever beam. In addition, the up and down swing function of the sample plate is added to drive the wafer to swing up and down, so that when the table structure on the surface of the wafer is deposited with a thin film, the uniformity of the thin film covering the table structure can be effectively improved, thereby improving the device performance and working reliability. It can be applied to the preparation of p-on-n table-type infrared detectors, especially for small-pitch and high-aspect-ratio detectors. The present application also provides a thin film deposition method, which deposits on a wafer based on the above-mentioned thin film deposition device, and also has the above-mentioned beneficial effects. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on the provided drawings without paying any creative work.

[0037] Figure 1 A schematic diagram of the structure of a mercury cadmium telluride infrared detector provided in an embodiment of the present application;

[0038] Figure 2 A schematic structural diagram of a wafer carrying device provided in an embodiment of the present application;

[0039] Figure 3 A flow chart of a thin film deposition method provided in an embodiment of the present application.

[0040] The following are the descriptions of the reference numerals:

[0041] 11 - substrate; 12 - n-type layer; 13 - p-type layer; 14 - passivation layer; 15 - P-type contact electrode; 21 - spindle; 22 - cantilever beam; 23 - driving device; 24 - sample tray. DETAILED DESCRIPTION

[0042] In order to make the purpose, technical scheme and advantages of the embodiments of the present application clearer, the technical scheme in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0043] Please refer to Figure 2 , Figure 2 A schematic diagram of the structure of a wafer carrier provided in an embodiment of the present application. A thin film deposition device provided in an embodiment of the present application may include: a chamber and a wafer carrier;

[0044] The chamber is used to accommodate a wafer carrier and deposit a thin film on the surface of the wafer;

[0045] The wafer carrying device includes a main shaft 21, a cantilever beam 22, a driving device 23 and a sample tray 24; the sample tray 24 is used to place wafers; the first end of the driving device 23 is connected to the sample tray 24, and is used to drive the sample tray 24 to swing up and down and rotate around the center of the sample tray 24; the second end of the driving device 23 is connected to the cantilever beam 22, and the cantilever beam 22 is connected to the main shaft 21, and is used to drive the sample tray 24 to revolve around the main shaft 21.

[0046] This embodiment does not limit the specific type of chamber, and can be any chamber that can deposit a thin film, for example, the chamber can be a thermal evaporation chamber or an electron beam evaporation chamber. That is, this embodiment can be applicable to thermal evaporation equipment or electron beam evaporation equipment. It should be noted that the chamber in the thermal evaporation equipment or the electron beam evaporation equipment is generally a vacuum chamber.

[0047] This embodiment can be applied to a wafer with a mesa structure on the surface. For example, the wafer may include: a substrate; at least one mesa structure is arranged on the surface of the substrate; the mesa structure includes an n-type layer and a p-type layer arranged in sequence along the thickness direction. Among them, the substrate can be but not limited to a CdZnTe substrate, a Si substrate or a Ge substrate; the n-type layer can be but not limited to a HgCdTe layer doped with In; the p-type layer can be but not limited to a HgCdTe layer doped with As. Accordingly, the thin film deposited on the surface of the wafer in this embodiment can be a passivation layer.

[0048] In addition, this embodiment can also be applied to other types of wafers, on the surface of which other types of film layers are deposited, and can also achieve the effect of improving the uniformity of the deposited thin film.

[0049] In this embodiment, the main shaft 21 can extend along the first direction, the cantilever beam 22 can extend along the second direction, and the driving device 23 can extend along the third direction. This embodiment does not limit the specific directions of the first direction, the second direction, and the third direction. For example, the first direction and the third direction can be perpendicular to the surface of the sample tray 24; the second direction can be parallel to the surface of the sample tray 24.

[0050] This embodiment does not limit the specific connection position of the main shaft 21 and the cantilever beam 22. For example, the main shaft 21 can be connected to the center of the cantilever beam 22; accordingly, the two ends of the cantilever beam 22 can be connected to a driving device 23 respectively, and the two driving devices 23 are symmetrical about the main shaft 21; the main shaft 21 can also be connected to one end of the cantilever beam 22; accordingly, the other end of the cantilever beam 22 can be connected to a driving device 23.

[0051] The present embodiment does not limit the specific type of the driving device 23, as long as it can ensure that it can drive the sample disk 24 to swing up and down and rotate around the center of the sample disk 24. For example, the driving device 23 may include a swinging mechanism and a rotating mechanism; the rotating mechanism is connected to the cantilever beam 22 to drive the sample disk 24 to rotate around the center of the sample disk 24; the swinging mechanism is connected to the rotating mechanism to drive the sample disk 24 to swing up and down.

[0052] The sample tray 24 in this embodiment has an adjustable revolution speed, an adjustable rotation speed, and an adjustable swing angle. The swing angle of the sample tray 24 can be -15° to +15°, including both ends.

[0053] This embodiment does not limit the specific size of the sample tray 24. For example, the diameter of the sample tray 24 may not exceed 8 inches.

[0054] Further, the thin film deposition device in this embodiment may also include: a temperature control device; the temperature control device is used to pass a temperature control medium and / or gas into the transmission channel to control the temperature of the sample tray 24 and the wafer by heat conduction; a first transmission channel is provided inside the spindle 21, a second transmission channel is provided inside the cantilever beam 22, and a third transmission channel is provided in the driving device 23; the first transmission channel, the second transmission channel and the third transmission channel are connected in sequence to form a transmission channel; one end of the third transmission channel passes through the sample tray 24 along the thickness direction of the sample tray 24. Among them, the temperature control medium can be but not limited to oil, and the gas can be but not limited to helium. It should be noted that in this embodiment, the temperature control device passes a temperature control medium and / or gas into the transmission channel to the bottom of the sample tray 24, and the temperature control medium and / or gas at the bottom of the sample tray 24 controls the temperature of the sample tray 24 and the wafer by heat conduction, which can make the temperature of the sample tray 24 and the wafer uniform, thereby further improving the uniformity of the film.

[0055] Furthermore, the thin film deposition device in this embodiment may also include: a control unit, the control unit is used to set the movement parameters of the sample disk 24 according to the pixel size and aspect ratio of the mesa structure on the surface of the wafer, and the movement parameters include the revolution speed, rotation speed, swing angle, and swing frequency; after the movement parameters are set, the thin film deposition process parameters of the wafer are set; the movement parameters and the thin film deposition process parameters are stored in the corresponding program; and the program is called. Among them, the thin film deposition process parameters may include but are not limited to thermal evaporation power or electron beam evaporation power. It should be noted that the control unit in this embodiment can control the movement parameters of the sample disk 24 and the thin film deposition process parameters of the wafer according to the pixel size and aspect ratio of the mesa structure on the surface of the wafer, thereby ensuring that this embodiment can be applied to different types of wafers.

[0056] Furthermore, this embodiment may include: a transfer chamber; a transfer chamber for transferring wafers.

[0057] Based on the above embodiments, the wafer carrier device of the present application can not only drive the wafer to rotate, but also drive the wafer to revolve around the main axis along with the cantilever beam. In addition, the up and down swing function of the sample plate is added to drive the wafer to swing up and down, so that when the table structure on the surface of the wafer is deposited with a thin film, the uniformity of the thin film covering the table structure can be effectively improved, thereby improving the device performance and working reliability. It can be applied to the preparation of p-on-n table-type infrared detectors, especially for small-pitch and high-aspect-ratio detectors.

[0058] Please refer to Figure 2 and Figure 3 , Figure 3 A flow chart of a thin film deposition method provided in an embodiment of the present application, the method may include:

[0059] S101: Transfer the wafer to a sample tray in a chamber; the chamber is used to accommodate a wafer carrier; the wafer carrier includes a spindle, a cantilever beam, a drive device and a sample tray; the first end of the drive device is connected to the sample tray; the second end of the drive device is connected to the cantilever beam, and the cantilever beam is connected to the spindle.

[0060] This embodiment does not limit the specific method of transferring the wafer, as long as it is ensured that the wafer can be transferred to the target position, for example, the wafer can be transferred to the sample tray 24 in the chamber through the transfer cavity;

[0061] Correspondingly, after step S102, the following steps may also be included:

[0062] After the deposition is completed, the wafer is transferred to the transfer chamber and taken out after returning to room temperature.

[0063] Furthermore, after step S101, this embodiment may further include: determining the size of the chamber according to the type of the film layer deposited on the surface of the wafer;

[0064] The number of cantilever beams 22 and the number of sample trays 24 are determined according to the size of the chamber.

[0065] Furthermore, after step S101, this embodiment may also include: opening the temperature control device and setting the temperature control device, introducing a temperature control medium and / or gas into the transmission channel to control the temperature of the sample tray 24 and the wafer by heat conduction; a first transmission channel is provided inside the spindle 21, a second transmission channel is provided inside the cantilever beam 22, and a third transmission channel is provided on the driving device 23; the first transmission channel, the second transmission channel and the third transmission channel are connected in sequence to form a transmission channel; one end of the third transmission channel passes through the sample tray 24 along the thickness direction of the sample tray 24. It should be noted that in this embodiment, the temperature control medium and / or gas is introduced into the transmission channel to the bottom of the sample tray 24 by the temperature control device, and the temperature of the sample tray 24 and the wafer is controlled by the temperature control medium and / or gas at the bottom of the sample tray 24 by heat conduction, so that the temperature of the sample tray 24 and the wafer can be uniform, thereby further improving the uniformity of the thin film.

[0066] S102: performing thin film deposition on the wafer in the chamber, and during the thin film deposition process, the sample plate is driven to swing up and down and rotate around the center of the sample plate by a driving device, and the sample plate is driven to revolve around the main axis by a cantilever beam.

[0067] Further, in this implementation, step S102 may specifically include: setting movement parameters of the sample plate 24 according to the pixel size and aspect ratio of the mesa structure on the wafer surface, the movement parameters including the revolution speed, the rotation speed, the swing angle, and the swing frequency;

[0068] After the movement parameters are set, the thin film deposition process parameters of the wafer are set;

[0069] storing movement parameters and thin film deposition process parameters into corresponding programs;

[0070] The program is called to perform thin film deposition on the wafer in the chamber, and during the thin film deposition process, the driving device 23 drives the sample disk 24 to swing up and down and rotate around the center of the sample disk 24, and the cantilever beam 22 drives the sample disk 24 to revolve around the main axis 21.

[0071] It should be noted that in this embodiment, the movement parameters of the sample plate 24 and the thin film deposition process parameters of the wafer can be controlled according to the pixel size and aspect ratio of the wafer surface mesa structure, ensuring that this embodiment can be applied to different types of wafers.

[0072] Based on the above embodiments, the present application performs deposition on wafers based on the above thin film deposition device, which also has the above beneficial effects.

[0073] The above-mentioned thin film deposition process is described below with reference to specific examples. Figure 2 The thin film deposition device shown in the figure, the process is as follows:

[0074] 1. First, transfer the wafer to the sample tray 24 in the chamber through the transfer chamber, turn on and set the temperature control device, transfer the temperature control medium and helium to the bottom of the sample tray 24, and control the temperature of the sample tray 24 and the wafer by heat conduction, so that the temperature of the sample tray 24 and the wafer is uniform;

[0075] 2. According to the pixel size and aspect ratio of the mesa structure on the wafer surface, the revolution speed, rotation speed, swing angle and swing frequency of the sample disk 24 are set. After the above parameters are set, the thin film deposition process parameters such as thermal evaporation power or electron beam evaporation power are set and stored in the corresponding program;

[0076] 3. Call the above program to perform thin film deposition;

[0077] 4. After deposition is completed, wait for the wafer to return to room temperature, then transfer the wafer to the transfer chamber and take it out.

[0078] Specific examples are used herein to illustrate the principles and implementation methods of the present application, and the embodiments are in a progressive relationship, each embodiment focuses on the differences from other embodiments, and the same and similar parts between the embodiments can be referred to each other. The description of the above embodiments is only used to help understand the method and core ideas of the present application. For ordinary technicians in this technical field, without departing from the principles of the present application, several improvements and modifications can be made to the present application, and these improvements and modifications also fall within the scope of protection of the claims of the present application.

[0079] It should also be noted that, in this specification, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "comprise", "include" or any other variants thereof are intended to cover non-exclusive inclusion, so that the process, method, article or equipment including a series of elements includes not only those elements, but also includes other elements not explicitly listed, or also includes elements inherent to such process, method, article or equipment. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the presence of other identical elements in the process, method, article or equipment including the elements.

Claims

1. A thin film deposition device, characterized in that: include: chamber and wafer carrier; The chamber is used to accommodate the wafer carrying device and deposit a thin film on the surface of the wafer; The wafer carrying device includes a main shaft, a cantilever beam, a driving device and a sample tray; the sample tray is used to place the wafer; the first end of the driving device is connected to the sample tray, and is used to drive the sample tray to swing up and down and rotate around the center of the sample tray; the second end of the driving device is connected to the cantilever beam, and the cantilever beam is connected to the main shaft, and is used to drive the sample tray to revolve around the main shaft.

2. The thin film deposition device according to claim 1, characterized in that: Also includes: A control unit, the control unit is used to set the movement parameters of the sample plate according to the pixel size and aspect ratio of the wafer surface table structure, the movement parameters including the revolution speed, the rotation speed, the swing angle, and the swing frequency; After the movement parameters are set, setting the thin film deposition process parameters of the wafer; storing the movement parameters and the thin film deposition process parameters in corresponding programs; Call the program.

3. The thin film deposition device according to claim 1, characterized in that: Also includes: A temperature control device; the temperature control device is used to introduce a temperature control medium and / or gas into the transmission channel to control the temperature of the sample plate and the wafer by heat conduction; A first transmission channel is arranged inside the main shaft, a second transmission channel is arranged inside the cantilever beam, and a third transmission channel is arranged inside the driving device; the first transmission channel, the second transmission channel and the third transmission channel are connected in sequence to form the transmission channel; one end of the third transmission channel passes through the sample disk along the thickness direction of the sample disk.

4. The thin film deposition device according to claim 1, characterized in that: The main shaft is connected to the center of the cantilever beam; two ends of the cantilever beam are respectively connected to a driving device, and the two driving devices are symmetrical about the main shaft.

5. The thin film deposition device according to claim 1, characterized in that: The driving device comprises a swing mechanism and a rotating mechanism; the rotating mechanism is connected to the cantilever beam and is used to drive the sample disk to rotate around the center of the sample disk; the swing mechanism is connected to the rotating mechanism and is used to drive the sample disk to swing up and down.

6. A thin film deposition method, characterized in that: include: transferring the wafer to a sample tray in the chamber; The chamber is used to accommodate the wafer carrying device; The wafer carrying device comprises a main shaft, a cantilever beam, a driving device and the sample tray; the first end of the driving device is connected to the sample tray; the second end of the driving device is connected to the cantilever beam, and the cantilever beam is connected to the main shaft; Thin film deposition is performed on the wafer in the chamber, and during the thin film deposition process, the driving device drives the sample disk to swing up and down and rotate around the center of the sample disk, and the cantilever beam drives the sample disk to revolve around the main axis.

7. The thin film deposition method according to claim 6, characterized in that: After transferring the wafer to the sample plate in the chamber, the method further comprises: Turn on the temperature control device and set it up, and introduce a temperature control medium and / or gas into the transmission channel to control the temperature of the sample disk and the wafer by heat conduction; a first transmission channel is provided inside the spindle, a second transmission channel is provided inside the cantilever beam, and a third transmission channel is provided on the driving device; the first transmission channel, the second transmission channel and the third transmission channel are connected in sequence to form the transmission channel; one end of the third transmission channel passes through the sample disk along the thickness direction of the sample disk.

8. The thin film deposition method according to claim 6, characterized in that: The method of depositing a thin film on the wafer in the chamber, and driving the sample disk to swing up and down and rotate around the center of the sample disk by the driving device during the thin film deposition, and driving the sample disk to revolve around the main axis by the cantilever beam, comprises: According to the pixel size and aspect ratio of the mesa structure on the surface of the wafer, the movement parameters of the sample plate are set, and the movement parameters include the revolution speed, the rotation speed, the swing angle, and the swing frequency; After the movement parameters are set, setting the thin film deposition process parameters of the wafer; storing the movement parameters and the thin film deposition process parameters in corresponding programs; The program is called to perform thin film deposition on the wafer in the chamber, and during the thin film deposition process, the sample disk is driven by the driving device to swing up and down and rotate around the center of the sample disk, and the sample disk is driven by the cantilever beam to revolve around the main axis.

9. The thin film deposition method according to claim 6, characterized in that: Before transferring the wafer to the sample plate in the chamber, the method further includes: Determining the size of the chamber according to the type of film layer deposited on the surface of the wafer; The number of the cantilever beams and the number of the sample trays are determined according to the size of the chamber.

10. The thin film deposition method according to claim 6, characterized in that: The step of transferring the wafer to a sample plate in the chamber comprises: Transferring the wafer to the sample plate in the chamber through a transfer chamber; Correspondingly, the thin film deposition is performed on the wafer in the chamber, and during the thin film deposition, the sample disk is driven to swing up and down and rotate around the center of the sample disk by the driving device, and the sample disk is driven to revolve around the main axis by the cantilever beam, and further includes: After the deposition is completed, the wafer is returned to room temperature and then transferred to the transfer chamber and taken out.

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