Band-pass film, preparation method thereof and detector
Through the combination of multi-layer sub-cut layer structure and new processes, the problems of excessive stress and insufficient transmittance in the bandpass film are solved, and efficient light transmission and cost reduction are achieved.
Patent Information
- Application Number
- CN202310803427.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2023-06-30
- Publication Date
- 2024-12-31
AI Technical Summary
Excessive stress in the bandpass film leads to insufficient transmittance, complex production process and high cost.
Using a multi-layer sub-cutting layer structure, including germanium, tellurium and zinc sulfide materials, it avoids the use of lead elements by adjusting the number and arrangement of layers, and forms a bandpass film with dense structure, and is prepared by evaporation resistance and magnetron sputtering processes. Reduce the number of film layers and improve transmittance.
The transmittance of the bandpass film to 8 μm to 14 μm light is improved, the production cost and working hours are reduced, the pass rate of the film is enhanced, and the problem of excessive stress is avoided.
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Figure CN119224905A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the technical field of bandpass films, and in particular to a bandpass film and a preparation method thereof, and a detector. Background Art
[0002] Infrared detectors are the bridge connecting the entire infrared detection system with the outside world and are the core of the entire infrared detection technology. Since the 1970s, the needs of various fields have promoted the research and development of infrared detectors. In the civilian field, they are widely used in industry, medicine, agriculture and forestry, fire fighting, search and rescue, and environmental protection.
[0003] In order to improve the recognition rate of infrared detectors in different environments, a bandpass film is usually provided on the infrared detector. The bandpass film is a film material that has high transmittance to light in a certain band of light and highly cuts off light in other bands. Summary of the invention
[0004] The purpose of the present application is to provide a bandpass film and a preparation method thereof, and a detector, which are used to solve the problem of excessive stress in the bandpass film and improve the transmittance of the bandpass film to light in the wavelength range of 8μm to 14μm.
[0005] To achieve the above objectives, the embodiments of the present application provide the following technical solutions:
[0006] On the one hand, a bandpass film is provided. The bandpass film includes a substrate and a cutoff layer. The cutoff layer is located on one side of the substrate. The cutoff layer includes a plurality of sub-cutoff layers, the plurality of sub-cutoff layers including a first sub-cutoff layer located on the substrate, and a plurality of second sub-cutoff layers and a plurality of third sub-cutoff layers located on a side of the first sub-cutoff layer away from the substrate and alternately stacked; the material of the first sub-cutoff layer includes germanium; the material of at least part of the second sub-cutoff layer includes tellurium; the material of the third sub-cutoff layer includes zinc sulfide; the thickness of the cutoff layer ranges from [6 μm, 15 μm]; the number of layers of the sub-cutoff layers ranges from [10, 30].
[0007] In the bandpass film provided in the embodiment of the present application, the cutoff layer includes a multi-layer sub-cutoff layer. In the multi-layer sub-cutoff layer, by adjusting the number of layers, arrangement and material composition of the first sub-cutoff layer, the second sub-cutoff layer and the third sub-cutoff layer, the use of lead elements in the bandpass film can be avoided, so that the number of film layers of the bandpass film is small, the problem of excessive stress of the bandpass film caused by too many film layers in the bandpass film can be avoided, the qualified rate of the bandpass film can be improved, and the working hours occupied in the process of making the bandpass film can be reduced, and the production cost of making the bandpass film can be reduced. And the average value of the transmittance of the above-mentioned bandpass film to the light in the wavelength range of 2μm to 7.2μm is less than or equal to 1%, and the average value of the transmittance to the light in the wavelength range of 8μm to 14μm is greater than or equal to 55%. Therefore, compared with one implementation method, the wavelength range of the light transmitted by the bandpass film can be made larger, and the transmittance of the bandpass film to the light in the wavelength range of 8μm to 14μm is improved.
[0008] In some embodiments, a portion of the second sub-cutoff layer is made of tellurium, a portion of the second sub-cutoff layer is made of germanium, and the number of layers of the second sub-cutoff layer including germanium is in the range of [1, 5].
[0009] In some embodiments, along the direction in which the first sub-cutoff layer is away from the substrate, multiple layers of the second sub-cutoff layer and multiple layers of the third sub-cutoff layer are alternately stacked in sequence, or multiple layers of the third sub-cutoff layer and multiple layers of the second sub-cutoff layer are alternately stacked in sequence.
[0010] In some embodiments, the structure of the cutoff layer is a multi-layer dense structure.
[0011] In some embodiments, the bandpass film further includes a connection layer disposed between the substrate and the first sub-stop layer.
[0012] In some embodiments, the material of the connection layer includes germanium.
[0013] In some embodiments, the thickness of the stop layer is greater than the thickness of the connection layer.
[0014] In some embodiments, the thickness of the connecting layer is in the range of [0.01 μm, 1 μm].
[0015] In some embodiments, the structure of the connecting layer is a single-layer dense structure.
[0016] In some embodiments, the mass fraction of germanium in the material of the first sub-cutoff layer is greater than or equal to 99.99%, the mass fraction of tellurium in the material of the second sub-cutoff layer including tellurium is greater than or equal to 99.99%, and the mass fraction of zinc sulfide in the material of the third sub-cutoff layer is greater than or equal to 99.99%. In the case where the material of a portion of the second sub-cutoff layer includes germanium, the mass fraction of germanium in the material of the second sub-cutoff layer including germanium is greater than or equal to 99.99%.
[0017] In another aspect, a detector is provided, comprising: any of the above-mentioned bandpass films, a sensor and a signal processing circuit. The sensor is arranged on one side of the bandpass film. The signal processing circuit is electrically connected to the sensor.
[0018] On the other hand, a method for preparing a bandpass film is provided, the method comprising: providing a substrate; forming a cutoff layer on one side of the substrate by a resist evaporation process. The cutoff layer comprises a plurality of sub-cutoff layers, the plurality of sub-cutoff layers comprising a first sub-cutoff layer located on the substrate, and a plurality of second sub-cutoff layers and a plurality of third sub-cutoff layers located on a side of the first sub-cutoff layer away from the substrate and alternately stacked; the material of the first sub-cutoff layer comprises germanium; the material of at least part of the second sub-cutoff layer comprises tellurium; the material of the third sub-cutoff layer comprises zinc sulfide; the thickness of the cutoff layer ranges from [6μm, 15μm]; the number of layers of the sub-cutoff layer ranges from [10, 30].
[0019] In some embodiments, a portion of the second sub-cutoff layer is made of tellurium, a portion of the second sub-cutoff layer is made of germanium, and the number of layers of the second sub-cutoff layer including germanium is in the range of [1, 5].
[0020] In some embodiments, along the direction in which the first sub-cutoff layer is away from the substrate, multiple layers of the second sub-cutoff layer and multiple layers of the third sub-cutoff layer are alternately stacked in sequence, or multiple layers of the third sub-cutoff layer and multiple layers of the second sub-cutoff layer are alternately stacked in sequence.
[0021] In some embodiments, the conditions of the barrier evaporation process include: before forming the cut-off layer, the vacuum degree of the coating chamber is in the range of [3E-3Pa, 1E-6Pa]; during the formation of the cut-off layer, the pressure range of the coating chamber is [3E-2Pa, 1E-5Pa], the evaporation current range is [20A, 800A], the evaporation voltage range is [20V, 80V], and the deposition time range is [60min, 1500min].
[0022] In some embodiments, after providing the substrate and before forming a stop layer on one side of the substrate by a resist evaporation process, the preparation method further includes: forming a connection layer on one side of the substrate by a magnetron sputtering process.
[0023] In some embodiments, the magnetron sputtering process conditions include: before forming the connecting layer, the vacuum degree of the coating chamber is in the range of [3E-2Pa, 1E-5Pa]; during the formation of the connecting layer, the pressure range of the coating chamber is [3E-3Pa, 1E-6Pa], the evaporation current range is [100mA, 400mA], the evaporation voltage range is [-6kV, -10kV], and the deposition time range is [60s, 3600s].
[0024] The preparation methods of the above detectors and bandpass films have similar beneficial effects as those of the bandpass films described in some of the above embodiments, which will not be described in detail here. BRIEF DESCRIPTION OF THE DRAWINGS
[0025] Figure 1 A schematic diagram of the structure of a detector provided in an embodiment of the present application;
[0026] Figure 2 A schematic diagram of the structure of a bandpass film provided in an embodiment of the present application;
[0027] Figure 3 A schematic diagram of the structure of another bandpass film provided in an embodiment of the present application;
[0028] Figure 4 A test curve diagram of light transmittance of a bandpass film provided in an embodiment of the present application;
[0029] Figure 5A A schematic diagram of the structure of another bandpass film provided in an embodiment of the present application;
[0030] Figure 5B This is a schematic structural diagram of another bandpass film provided in an embodiment of the present application;
[0031] Figure 6 A flow chart of a method for preparing a bandpass film provided in an embodiment of the present application;
[0032] Figure 7 A schematic diagram of the structure of a substrate provided in an embodiment of the present application;
[0033] Fig. 8A This is a schematic structural diagram of another bandpass film provided in an embodiment of the present application;
[0034] Figure 8B This is a schematic structural diagram of another bandpass film provided in an embodiment of the present application;
[0035] Fig. 9 A schematic diagram of the structure of a substrate and a connecting layer provided in an embodiment of the present application;
[0036] Fig.10 This is a schematic diagram of the structure of another bandpass film provided in an embodiment of the present application. DETAILED DESCRIPTION
[0037] The following will be combined with the accompanying drawings to clearly and completely describe the technical solutions in some embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments provided by the present application, all other embodiments obtained by ordinary technicians in this field belong to the scope of protection of the present application.
[0038] Unless the context requires otherwise, throughout the specification and claims, the term "comprise" and other forms thereof, such as the third person singular form "comprises" and the present participle form "comprising", are to be interpreted as open, inclusive, that is, "including, but not limited to". In the description of the specification, the terms "one embodiment", "some embodiments", "example" or "some examples" and the like are intended to indicate that specific features, structures, materials or characteristics associated with the present embodiment or example are included in at least one embodiment or example of the present application. The schematic representation of the above terms does not necessarily refer to the same embodiment or example. In addition, the specific features, structures, materials or characteristics described may be included in any one or more embodiments or examples in any appropriate manner.
[0039] In the following, the terms "first" and "second" are used for descriptive purposes only and are not to be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the embodiments of the present application, unless otherwise specified, "plurality" means two or more.
[0040] When describing some embodiments, the expression "connection" and its derivatives may be used. The term "connection" should be understood in a broad sense. For example, "connection" can be a fixed connection, a detachable connection, or an integral connection; it can be directly connected or indirectly connected through an intermediate medium. The embodiments disclosed herein are not necessarily limited to the contents of this document.
[0041] Additionally, the use of “based on” is meant to be open and inclusive, as a process, step, calculation, or other action “based on” one or more stated conditions or values may, in practice, be based on additional conditions or values beyond those stated.
[0042] Exemplary embodiments are described herein with reference to cross-sectional views and / or plan views that are idealized exemplary drawings. In the drawings, the areas of the regions are exaggerated for clarity. Therefore, variations in shape relative to the drawings due to, for example, manufacturing techniques and / or tolerances are conceivable. Therefore, the exemplary embodiments should not be interpreted as being limited to the shapes of the regions shown herein, but include deviations in shape due to, for example, manufacturing. Therefore, the regions shown in the drawings are schematic in nature, and their shapes are not intended to illustrate the actual shapes of the regions of the device, and are not intended to limit the scope of the exemplary embodiments.
[0043] As used herein, the term "substrate" refers to a material onto which subsequent layers of material may be added. The substrate itself may be patterned. The material added onto the substrate may be patterned or may remain unpatterned.
[0044] The embodiments provided in this application are described in detail below in conjunction with the accompanying drawings.
[0045] like Figure 1 As shown, the embodiment of the present application provides a detector 1000, which includes a bandpass film 100, a sensor 200 and a signal processing circuit 300. The sensor 200 is disposed on one side of the bandpass film 100, and the signal processing circuit 300 is electrically connected to the sensor 200.
[0046] Exemplarily, the detector 1000 may be an infrared detector.
[0047] The bandpass film 100 can selectively transmit part of the light.
[0048] For example, the bandpass film 100 can transmit light with a wavelength range of 8 μm to 15 μm, and prevent light outside the above wavelength range from transmitting. That is, among the light incident on the light-entering side of the bandpass film 100, the light with a wavelength range of 8 μm to 15 μm can be emitted from the light-exiting side (the side opposite to the light-entering side) of the bandpass film 100.
[0049] Exemplarily, the sensor 200 may convert a light signal of light incident on the sensor 200 into an electrical signal and output the electrical signal.
[0050] For example, the sensor 200 may be a charge coupled device (CCD) or other device.
[0051] Exemplarily, the signal processing circuit 300 is used to convert and store the electrical signal output by the sensor 200 .
[0052] In one implementation, the bandpass film is formed by overlapping zinc sulfide film layers and lead telluride film layers, and the total number of film layers can reach 50 layers, and the stress in the bandpass film is relatively large. The wavelength range of the light that can be transmitted by the above-mentioned bandpass film is 10.3μm to 11.3μm, and the wavelength range of the light that can be transmitted is limited to only 1μm, and it contains elemental lead. Therefore, how to use materials that do not contain lead elements to make bandpass films, reduce the stress in the bandpass films, and increase the wavelength range and transmittance of the light that can be transmitted by the bandpass films are issues that technicians have always been concerned about.
[0053] Based on this, Figure 2 As shown, the bandpass film 100 in the embodiment of the present disclosure includes a substrate 1 and a cut-off layer 2 .
[0054] Exemplarily, the substrate 1 can provide support for the stop layer 2 .
[0055] Exemplarily, the material of the substrate 1 includes silicon, germanium, and the like.
[0056] In some examples, such as Figure 2 and Figure 3 As shown, the cut-off layer 2 is located on one side of the substrate 1; the cut-off layer 2 includes a plurality of sub-cut-off layers 21, the sub-cut-off layers 21 include a first sub-cut-off layer 21A located on the substrate 1, and a plurality of second sub-cut-off layers 21B and a plurality of third sub-cut-off layers 21C located on a side of the first sub-cut-off layer 21A away from the substrate 1 and alternately stacked.
[0057] By making the multi-layer second cut-off sub-layer 21B and the multi-layer third cut-off sub-layer 21C have multiple arrangements, the flexibility in preparing the cut-off layer 2 can be improved.
[0058] In some examples, the material of the first sub-stop layer 21A includes germanium, the material of at least a portion of the second sub-stop layer 21B includes tellurium, and the material of the third sub-stop layer 21C includes zinc sulfide.
[0059] For example, the number of layers of the first sub-cut-off layer 21A may be one layer.
[0060] The material of at least part of the second sub-cut layers 21B includes tellurium. This means that among all the second sub-cut layers 21B, the material of a part of the second sub-cut layers 21B includes tellurium, or the material of all the second sub-cut layers 21B includes tellurium.
[0061] For example, the number of layers of the second sub-cut-off layer 21B may be five, six, ten, twelve or fifteen.
[0062] Exemplarily, the number of layers of the third sub-cut-off layer 21C may be four, six, ten, twelve or fourteen.
[0063] In some examples, the thickness of the cut-off layer 2 is in the range of [6 μm, 15 μm]; and the number of sub-cut-off layers 21 is in the range of [10, 30].
[0064] For example, the thickness of the cut-off layer 2 may be 6 μm, 8 μm, 10 μm, 12 μm or 15 μm.
[0065] For example, the number of sub-cut-off layers 21 may be 10, 15, 20, 25 or 30.
[0066] Exemplarily, when the number of layers of the sub-cutoff layer 21 is eleven, the number of layers of the first sub-cutoff layer 21A is one, and the number of layers of the second sub-cutoff layer 21B and the number of layers of the third sub-cutoff layer 21C are five. When the number of layers of the sub-cutoff layer 21 is twelve, the number of layers of the first sub-cutoff layer 21A is one, the number of layers of the second sub-cutoff layer 21B is six, and the number of layers of the third sub-cutoff layer 21C is five. When the number of layers of the sub-cutoff layer 21 is thirteen, the number of layers of the first sub-cutoff layer 21A is one, and the number of layers of the second sub-cutoff layer 21B and the number of layers of the third sub-cutoff layer 21C are six.
[0067] The above arrangement can avoid the cut-off layer 2 being too thick and reducing the transmittance of light. In addition, the number of film layers of the above bandpass film 100 is small, which can avoid the problem of excessive stress of the bandpass film 100 due to too many film layers in the bandpass film 100, which is conducive to improving the qualified rate of the bandpass film 100; and the above arrangement can also reduce the working hours occupied in the process of manufacturing the bandpass film 100, and reduce the production cost of manufacturing the bandpass film 100.
[0068] The inventors of the present application used the above-mentioned bandpass film 100 to test the transmittance of light of different wavelengths. The test results are as follows: Figure 4 As shown, the horizontal axis represents the wavelength of light, in μm, and the vertical axis represents the transmittance of light of a certain wavelength. In order to avoid the influence of accidental factors that may exist in a single test result and make the result more accurate, three groups of bandpass films 100 were used to conduct three tests, and the three groups of bandpass films 100 were: the first group, the second group and the third group.
[0069] Depend on Figure 4It can be seen that the average transmittance of the bandpass film 100 for light in the wavelength range of 8μm to 14μm is greater than or equal to 55%, and the average transmittance of light in the wavelength range of 2μm to 7.2μm is less than or equal to 1%. Therefore, the bandpass film 100 has a good transmittance effect on light in the wavelength range of 8μm to 14μm. Compared with one implementation method, the wavelength range of light that can be transmitted by the bandpass film 100 in the embodiment of the present application is larger, so that more light in the wavelength range of 8μm to 14μm can be transmitted through the bandpass film 100 to the sensor 200, so that the sensor 200 located on the light-emitting side of the bandpass film 100 converts the optical signal of more light in the wavelength range into an electrical signal, thereby improving the recognition rate of the detector 1000 for light in the wavelength range of 8μm to 14μm. In addition, the bandpass film 100 has a good blocking effect on light in the wavelength range of 2μm to 7.2μm, which can prevent light in the wavelength range of 2μm to 7.2μm from passing through the bandpass film 100. Therefore, the influence of the light on the electrical signal of the sensor 200 after passing through the bandpass film 100 can be reduced, thereby avoiding affecting the recognition rate of the detector 1000 for light in the target wavelength range (eg, 8 μm to 14 μm).
[0070] Therefore, in the bandpass film 100 provided in the embodiment of the present application, the cutoff layer 2 includes a multi-layer sub-cutoff layer 21. In the multi-layer sub-cutoff layer 21, by adjusting the number of layers, arrangement and material composition of the first sub-cutoff layer 21A, the second sub-cutoff layer 21B and the third sub-cutoff layer 21C, the use of lead element in the bandpass film 100 can be avoided, so that the number of film layers of the bandpass film 100 is reduced, and the problem of excessive stress of the bandpass film 100 due to too many film layers in the bandpass film 100 can be avoided, the qualified rate of the bandpass film 100 is improved, and the working hours occupied in the process of manufacturing the bandpass film 100 can be reduced, thereby reducing the production cost of the bandpass film 100. Moreover, the average transmittance of the above-mentioned bandpass film 100 for light in the wavelength range of 2μm to 7.2μm is less than or equal to 1%, and the average transmittance for light in the wavelength range of 8μm to 14μm is greater than or equal to 55%. Therefore, compared with one implementation method, the wavelength range of light transmitted by the bandpass film 100 can be made larger, and the transmittance of the bandpass film 100 for light in the wavelength range of 8μm to 14μm can be improved.
[0071] In some embodiments, the material of a portion of the second sub-cutoff layer 21B includes tellurium, the material of a portion of the second sub-cutoff layer 21B includes germanium, and the number of layers of the second sub-cutoff layer 21B including germanium is in the range of [1, 5].
[0072] Exemplarily, the number of layers of the second stop sub-layer 21B including germanium may be one layer, two layers, three layers, four layers or five layers.
[0073] Exemplarily, the second sub-stop layer 21B including germanium may be any layer in the second sub-stop layer 21B.
[0074] The second sub-cut-off layer 21B including germanium has good adhesion. Through the above configuration, the adhesion between the sub-cut-off layers 21 of the cut-off layer 2 can be increased, which is beneficial to improving the overall strength of the cut-off layer 2 .
[0075] In some embodiments, the mass fraction of germanium in the material of the first sub-cut-off layer 21A is greater than or equal to 99.99%. The mass fraction of tellurium in the material of the second sub-cut-off layer 21B including tellurium is greater than or equal to 99.99%. The mass fraction of zinc sulfide in the material of the third sub-cut-off layer 21C is greater than or equal to 99.99%. In the case where the material of a portion of the second sub-cut-off layer 21B includes germanium, the mass fraction of germanium in the material of the second sub-cut-off layer 21B including germanium is greater than or equal to 99.99%.
[0076] Through the above arrangement, the purity of each sub-cutoff layer 21 can be increased, impurities in each sub-cutoff layer 21 can be prevented from affecting the light transmittance of the cutoff layer 2, and the selective transmittance of light with a wavelength range of 2 μm to 7.2 μm can be ensured.
[0077] It should be noted that there are many ways to alternately stack the plurality of second sub-cutoff layers 21B and the plurality of third sub-cutoff layers 21C.
[0078] In some examples, such as Figure 2 As shown, along the direction from the first sub-stop layer 21A away from the substrate 1, a plurality of second sub-stop layers 21B and a plurality of third sub-stop layers 21C are alternately stacked in sequence.
[0079] That is, if Figure 2 As shown, one of the second stop sub-layers 21B is in direct contact with the first stop sub-layer 21A.
[0080] Or, in other examples, Figure 3 As shown, along the direction from the first sub-stop layer 21A away from the substrate 1, a plurality of third sub-stop layers 21C and a plurality of second sub-stop layers 21B are alternately stacked in sequence.
[0081] That is, if Figure 3 As shown, one of the third stop sub-layers 21C is in direct contact with the first stop sub-layer 21A.
[0082] Through the above arrangement, the flexibility of the arrangement of the second sub-cutoff layer 21B and the third sub-cutoff layer 21C can be increased on the basis of ensuring the selective transmittance of the bandpass film 100 to light in the wavelength range of 8 μm to 14 μm.
[0083] In some embodiments, the structure of the cut-off layer 2 is a multi-layer dense structure.
[0084] In this way, the strength of the cut-off layer 2 can be enhanced while ensuring that the cut-off layer 2 has good transmittance to light, and the bandpass film 100 can be ensured to have a high transmittance to light in the wavelength range of 2 μm to 7.2 μm.
[0085] In some embodiments, Figure 5A and Figure 5B As shown, the bandpass film 100 further includes a connection layer 3 arranged between the substrate 1 and the stop layer 2 .
[0086] Exemplarily, the connecting layer 3 is used to adhere the stop layer 2 to the substrate 1 .
[0087] In some examples, the material of the connection layer 3 includes germanium.
[0088] Exemplarily, the structure of the connection layer 3 is a single-layer structure. Through the above arrangement, the connection strength between the cut-off layer 2 and the substrate 1 can be increased to prevent the cut-off layer 2 from falling off the substrate 1.
[0089] In some embodiments, the thickness of the stop layer 2 is greater than the thickness of the connection layer 3 .
[0090] In this way, the connection layer 3 can be prevented from having a significant impact on the transmittance of light.
[0091] In some embodiments, the thickness of the connecting layer 3 is in the range of [0.01 μm, 1 μm].
[0092] For example, the thickness of the connection layer 3 may be 0.01 μm, 0.1 μm, 0.4 μm, 0.8 μm or 1 μm.
[0093] Through the above arrangement, the connection layer 3 can have a higher adhesion performance and the transmittance of the bandpass film 100 to the transmissive light can be prevented from being reduced due to the connection layer 3 being too thick.
[0094] In some embodiments, the structure of the connecting layer 3 is a single-layer dense structure.
[0095] In this way, the strength of the connecting layer 3 can be enhanced while ensuring that the connecting layer 3 has good light transmittance, thereby preventing the connecting layer 3 from affecting the light transmittance of the bandpass film 100.
[0096] The present disclosure also provides a method for preparing a bandpass film. Figure 6 As shown, the preparation method includes: S100~S200.
[0097] S100, such as Figure 7 As shown, a substrate 1 is provided.
[0098] S200, such as Fig. 8A and 8BAs shown, a cut-off layer 2 is formed on one side of the substrate 1 by a resist evaporation process. The cut-off layer 2 includes a plurality of sub-cut-off layers 21, and the sub-cut-off layers 21 include a first sub-cut-off layer 21A located on the substrate 1, and a plurality of second sub-cut-off layers 21B and a plurality of third sub-cut-off layers 21C located on a side of the first sub-cut-off layer 21A away from the substrate 1 and alternately stacked. The material of the first sub-cut-off layer 21A includes germanium; the material of at least part of the second sub-cut-off layer 21B includes tellurium; and the material of the third sub-cut-off layer 21C includes zinc sulfide. The thickness of the cut-off layer 2 is in the range of [6μm, 15μm]; the number of layers of the sub-cut-off layer 21 is in the range of [10, 30].
[0099] The barrier evaporation process is a type of evaporation coating process. In the barrier evaporation process, the evaporation material is melted by resistance heating and the atoms of the evaporation material are evaporated, and finally reach the supporting surface to form a film. The barrier evaporation process has the advantages of simple process and low equipment cost.
[0100] Through the above arrangement, the lead element can be avoided in the formed bandpass film 100. The bandpass film 100 has a small number of film layers, which can avoid the problem of excessive stress in the bandpass film 100 caused by too many film layers in the bandpass film 100, improve the qualified rate of the bandpass film 100, and reduce the working hours occupied in the process of making the bandpass film 100, thereby reducing the production cost of making the bandpass film 100. In addition, Figure 4 The test results of light transmittance show that the bandpass film 100 formed above can transmit a wider wavelength range of light, which can increase the amount of light passing through the bandpass film 100 and improve the recognition rate of the detector 1000 for light in the target wavelength range.
[0101] In some embodiments, the material of a portion of the second sub-cutoff layer 21B includes tellurium, the material of a portion of the second sub-cutoff layer 21B includes germanium, and the number of layers of the second sub-cutoff layer 21B including germanium is in the range of [1, 5].
[0102] During the process of manufacturing the cutoff layer 2 , by manufacturing the second sub-cutoff layer 21B including germanium in the cutoff layer 2 , the adhesion of each sub-cutoff layer 21 in the cutoff layer 2 finally formed can be increased, which is beneficial to improving the overall strength of the cutoff layer 2 finally formed.
[0103] In some embodiments, during the process of manufacturing the multi-layer second sub-cutoff layer 21B and the multi-layer third sub-cutoff layer 21C, as shown in FIG. Fig. 8A As shown, along the direction in which the first sub-cut-off layer 21A is away from the substrate 1, multiple layers of second sub-cut-off layers 21B and multiple layers of third sub-cut-off layers 21C are alternately stacked in sequence, or as shown in FIG. Figure 8B As shown, a plurality of third sub-stop layers 21C and a plurality of second sub-stop layers 21B are alternately stacked in sequence.
[0104] Thus, in the process of manufacturing the cut-off layer 2, the arrangement order of the multi-layer second sub-cut-off layer 21B and the multi-layer third sub-cut-off layer 21C can be flexibly set, which can increase the flexibility of setting the second sub-cut-off layer 21B and the third sub-cut-off layer 21C. In some embodiments, the conditions of the above-mentioned barrier evaporation process include: before forming the cut-off layer 2, the vacuum degree of the coating chamber is in the range of [3E-3Pa, 1E-6Pa]; in the process of forming the cut-off layer 2, the pressure of the coating chamber is in the range of [3E-2Pa, 1E-5Pa], the evaporation current is in the range of [20A, 800A], the evaporation voltage is in the range of [20V, 80V], and the deposition time is in the range of [60min, 1500min].
[0105] For example, before forming the cut-off layer 2, the vacuum degree of the coating chamber may be 1×10 -6 Pa, 1×10 - 5 Pa, 1×10 -4 Pa, 5×10 -4 Pa or 1×10 -3 Pa et al.
[0106] For example, during the process of forming the stop layer 2, the pressure of the coating chamber may be 1×10 -5 Pa, 1×10 - 4 Pa, 1×10 -3 Pa, 1×10 -2 Pa or 3×10 -2 Pa et al.
[0107] For example, during the process of forming the cut-off layer 2 , the value of the evaporation current may be 20A, 100A, 300A, 600A or 800A, etc.
[0108] For example, during the process of forming the cut-off layer 2 , the evaporation voltage may be 20 V, 30 V, 40 V, 60 V or 80 V, etc.
[0109] For example, in the process of forming the stop layer 2 , the deposition time for forming the stop layer 2 may be 60 min, 200 min, 600 min, 1100 min or 1500 min.
[0110] Through the above arrangement, the film layers forming the cut-off layer 2 can be made denser, thereby ensuring the selective transmittance of the finally formed bandpass film 100 to light.
[0111] In some embodiments, after providing the substrate 1 and before forming the stop layer 2 on one side of the substrate 1 by a resist evaporation process, the preparation method further includes: S110.
[0112] S110, such as Fig. 9 As shown, the connection layer 3 is formed on one side of the substrate 1 by a magnetron sputtering process.
[0113] Exemplarily, forming the connection layer 3 may include a physical vapor deposition (PVD) process.
[0114] After forming the connection layer 3, as Fig.10 As shown, the stop layer 2 is finally formed on the connection layer 3 .
[0115] Through the above arrangement, a dense connection layer 3 can be formed, the connection strength between the substrate 1 and the cut-off layer 2 can be increased, and the cut-off layer 2 can be prevented from falling off from the substrate 1 .
[0116] In some embodiments, the process of forming the connecting layer 3 includes a magnetron sputtering process, and the magnetron sputtering process conditions include: before forming the connecting layer 3, the vacuum degree of the coating chamber is in the range of [3E-2Pa, 1E-5Pa]; during the formation of the connecting layer 3, the pressure range of the coating chamber is [3E-3Pa, 1E-6Pa], the evaporation current range is [100mA, 400mA], the evaporation voltage range is [-6kV, -10kV], and the deposition time range is [60s, 3600s].
[0117] Magnetron sputtering is a type of physical vapor deposition process that can be used to prepare a variety of materials, including metals, materials with electrical conductivity between conductors and insulators at room temperature, and insulators. It has the advantages of simple equipment, easy control, large coating area, and strong adhesion.
[0118] For example, before starting the coating, the vacuum value of the coating chamber can be 1×10 -5 Pa, 1×10 -4 Pa, 1×10 -3 Pa, 1×10 -2 Pa or 3×10 -2 Pa et al.
[0119] For example, during the coating process, the pressure of the coating chamber may be 1×10 -6 Pa, 1×10 -5 Pa, 1×10 -4 Pa, 1×10 -3 Pa or 3×10 -3 Pa et al.
[0120] For example, during the coating process, the value of the evaporation current may be 100 mA, 200 mA, 300 mA, 350 mA or 400 mA, etc.
[0121] For example, during the coating process, the evaporation voltage may be -6 kV, -7 kV, -8 kV, -9 kV or -10 kV, etc.
[0122] For example, during the coating process, the deposition time for forming the connection layer 3 may be 60 s, 600 s, 1500 s, 2500 s or 3600 s.
[0123] Through the above arrangement, it can be ensured that the finally formed connection layer 3 has good adhesion, so that the stop layer 2 and the substrate 1 have good connection strength.
[0124] The above description is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any changes or substitutions that any technician familiar with the technical field can think of within the technical scope disclosed in the present application should be covered within the protection scope of the present application.
Claims
1. A bandpass film, characterized in that: include: substrate; A cutoff layer is located at one side of the substrate; the cutoff layer includes a plurality of sub-cutoff layers, the plurality of sub-cutoff layers include a first sub-cutoff layer located on the substrate, and a plurality of second sub-cutoff layers and a plurality of third sub-cutoff layers located at a side of the first sub-cutoff layer away from the substrate and alternately stacked; the material of the first sub-cutoff layer includes germanium; the material of at least a portion of the second sub-cutoff layer includes tellurium; the material of the third sub-cutoff layer includes zinc sulfide; the thickness of the cutoff layer ranges from [6μm, 15μm]; the number of layers of the sub-cutoff layers ranges from [10, 30].
2. The bandpass film according to claim 1, characterized in that: A part of the second cut-off layer is made of tellurium, a part of the second cut-off layer is made of germanium, and the number of layers of the second cut-off layer including germanium is in the range of [1, 5].
3. The bandpass film according to claim 1 or 2, characterized in that: Along the direction from the first sub-cutoff layer away from the substrate, multiple layers of the second sub-cutoff layers and multiple layers of the third sub-cutoff layers are alternately stacked in sequence, or multiple layers of the third sub-cutoff layers and multiple layers of the second sub-cutoff layers are alternately stacked in sequence.
4. The bandpass film according to claim 3, characterized in that: The structure of the cut-off layer is a multi-layer dense structure.
5. The bandpass film according to claim 3, characterized in that: The bandpass film further includes a connection layer disposed between the substrate and the first cutoff layer.
6. The bandpass film according to claim 5, characterized in that: The material of the connection layer includes germanium.
7. The bandpass film according to claim 5, characterized in that: The thickness of the stop layer is greater than the thickness of the connection layer.
8. The bandpass film according to claim 5, characterized in that: The thickness of the connecting layer is in the range of [0.01 μm, 1 μm].
9. The bandpass film according to claim 5, characterized in that: The structure of the connecting layer is a single-layer dense structure.
10. The bandpass film according to claim 3, characterized in that: The mass fraction of germanium in the material of the first sub-cutoff layer is greater than or equal to 99.99%, the mass fraction of tellurium in the material of the second sub-cutoff layer including tellurium is greater than or equal to 99.99%, and the mass fraction of zinc sulfide in the material of the third sub-cutoff layer is greater than or equal to 99.99%; In the case that the material of a portion of the second sub-cut-off layer includes germanium, the mass fraction of germanium in the material of the second sub-cut-off layer including germanium is greater than or equal to 99.99%.
11. A detector, characterized in that: include: The bandpass film according to any one of claims 1 to 10; A sensor, disposed on one side of the bandpass film; The signal processing circuit is electrically connected to the sensor.
12. A method for preparing a bandpass film, characterized in that: The preparation method comprises: providing a substrate; forming a cutoff layer on one side of the substrate by a barrier evaporation process; The cutoff layer comprises a plurality of sub-cutoff layers, wherein the plurality of sub-cutoff layers comprises a first sub-cutoff layer located on the substrate, and a plurality of second sub-cutoff layers and a plurality of third sub-cutoff layers located on a side of the first sub-cutoff layer away from the substrate and alternately stacked; the material of the first sub-cutoff layer comprises germanium; the material of at least a portion of the second sub-cutoff layer comprises tellurium; the material of the third sub-cutoff layer comprises zinc sulfide; the thickness range of the cutoff layer is [6 μm, 15 μm]; and the number of layers of the sub-cutoff layers ranges from [10, 30].
13. The preparation method according to claim 12, characterized in that: A part of the second cut-off layer is made of tellurium, a part of the second cut-off layer is made of germanium, and the number of layers of the second cut-off layer including germanium is in the range of [1, 5].
14. The preparation method according to claim 12 or 13, characterized in that: Along the direction from the first sub-cutoff layer away from the substrate, multiple layers of the second sub-cutoff layers and multiple layers of the third sub-cutoff layers are alternately stacked in sequence, or multiple layers of the third sub-cutoff layers and multiple layers of the second sub-cutoff layers are alternately stacked in sequence.
15. The preparation method according to claim 14, characterized in that: The conditions of the barrier evaporation process include: before forming the cut-off layer, the vacuum degree of the coating chamber is in the range of [3E-3Pa, 1E-6Pa]; during the formation of the cut-off layer, the pressure of the coating chamber is in the range of [3E-2Pa, 1E-5Pa], the evaporation current is in the range of [20A, 800A], the evaporation voltage is in the range of [20V, 80V], and the deposition time is in the range of [60min, 1500min].
16. The preparation method according to claim 14, characterized in that: After providing the substrate and before forming a cut-off layer on one side of the substrate by a barrier evaporation process, the preparation method further comprises: A connection layer is formed on one side of the substrate by a magnetron sputtering process.
17. The preparation method according to claim 16, characterized in that: The magnetron sputtering process conditions include: before forming the connecting layer, the vacuum degree of the coating chamber is in the range of [3E-2Pa, 1E-5Pa]; during the formation of the connecting layer, the pressure range of the coating chamber is [3E-3Pa, 1E-6Pa], the evaporation current range is [100mA, 400mA], the evaporation voltage range is [-6kV, -10kV], and the deposition time range is [60s, 3600s].