Lower alignment wafer exposure machine
By using the auxiliary alignment lens above the graphics disk and the alignment lens below the crystal carrier in the crystal exposure machine, the accurate alignment of the graphics disk is achieved, solving the problem of alignment difficulties in the prior art, and improving the Accuracy and efficiency of crystal exposure operations.
Patent Information
- Application Number
- CN202310774811.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2023-06-28
- Publication Date
- 2024-12-31
AI Technical Summary
In existing crystal exposure machines, since the alignment lens is arranged under the crystal bearing seat, it is impossible to accurately align the pattern disk during the exposure process, resulting in the accuracy and yield of the circuit layout formation.
Design a lower alignment crystal exposure machine, using an auxiliary alignment lens located above the graphics disk, and in conjunction with the alignment lens located below the crystal bearing seat, ensuring the accurate alignment of the graphics disk, so that even if the crystal shielding is used, it can pass. Auxiliary alignment lens detects position.
It improves the overall accuracy and yield of crystal exposure operations and improves the operation efficiency.
Smart Images
Figure CN119225130A_ABST
Abstract
Description
Technical Field
[0001] The invention relates to a wafer exposure device, in particular to a bottom-aligned wafer exposure machine. Background Art
[0002] The existing process of forming a specific circuit layout on a wafer mainly uses ultraviolet exposure followed by etching and other steps. When the wafer is exposed, it is mainly carried out by an exposure machine. Please refer to Figures 5 to 8 , wherein the existing exposure machine is mainly provided with a wafer carrier 70 and a pattern disk 72 on a machine platform, the wafer carrier 70 is fixed on the machine platform, and the pattern disk 72 is movably arranged on the machine platform and is located above the wafer carrier 70 and forms an exposure gap with the wafer carrier 70, and a specific circuit layout pattern is formed on the pattern disk 72. In this way, after placing a wafer 80 coated with a photoresist material on the wafer carrier 70, the pattern disk 72 is moved above the wafer 80, and a certain exposure gap is maintained between the pattern disk 72 and the wafer 80, and then ultraviolet rays are emitted through an ultraviolet device, and through the pattern on the pattern disk 72, the photoresist material on the wafer 80 corresponding to the pattern on the pattern disk 72 is hardened, and then the part of the unhardened photoresist material on the wafer 80 is removed by etching or the like, so that a specific circuit layout can be formed on the wafer 80.
[0003] Since the size of the circuit layout formed on the wafer is very small, about a few nanometers, whether the pattern plate 72 and the wafer 80 can be accurately aligned is the most important link in the entire exposure process. Therefore, the existing exposure machine is usually provided with an alignment lens 74 located below the wafer carrier 70. In this way, the pattern plate 72 needs to be aligned before the wafer is placed on the wafer carrier 70. Figure 5 As shown, the pattern plate 72 is then removed, and a wafer 80 is placed on the wafer carrier 70, and the pattern plate 72 is then moved back. Figure 6 As shown, an exposure gap is formed between the pattern plate 72 and the wafer 80. Figure 7 As shown, to perform exposure operation, such as Figure 8 As shown, however, since the existing alignment lens 74 is disposed below the wafer carrier 70, when the wafer 80 is placed on the wafer carrier 70, since the wafer 80 itself is opaque, the alignment lens 74 located below the wafer carrier 70 will be blocked by the wafer 80 and cannot capture the pattern disk 72 located above the wafer 80. Therefore, at this time, there is no function of aligning the pattern disk 72. At this time, if there is a slight deviation in the position of the pattern disk 72, it cannot be detected by the alignment lens 74. Therefore, it will affect the accuracy of the exposure operation of the wafer 80, and further affect the accuracy and yield of the circuit layout formation on the wafer 80. Further improvement is indeed necessary. Summary of the invention
[0004] The main purpose of the present invention is to provide a bottom-aligned wafer exposure machine, which can accurately position the pattern disk through an auxiliary alignment lens located on the pattern disk, thereby achieving the purpose of improving the quality of wafer exposure operations.
[0005] To achieve the above-mentioned object, the present invention provides a bottom-aligned wafer exposure machine, which comprises:
[0006] One machine;
[0007] A wafer support fixed on the machine platform; and
[0008] A pattern plate movably disposed on the machine platform, the pattern plate is located above the wafer carrier and an exposure gap is formed between the pattern plate and the wafer carrier, and a specific circuit layout pattern is formed on the pattern plate;
[0009] At least one alignment lens disposed on the platform below the wafer support seat; and
[0010] At least one auxiliary alignment lens is arranged on the machine platform and located above the graphic disk.
[0011] The bottom-aligned wafer exposure machine has two alignment lenses.
[0012] The lower-alignment wafer exposure machine has two auxiliary alignment lenses.
[0013] In the bottom-aligned wafer exposure machine, the auxiliary alignment lenses are aligned relative to the alignment lenses.
[0014] Through the above-mentioned technical means, the present invention can provide accurate alignment of the graphic disk through the auxiliary alignment lens arranged above the graphic disk, and when the alignment lens located below the wafer carrier is blocked by the opaque wafer, it can improve the overall accuracy, yield and operating efficiency of the wafer exposure operation. BRIEF DESCRIPTION OF THE DRAWINGS
[0015] Figure 1 It is a schematic diagram of the graphic disk alignment operation performed in the present invention.
[0016] Figure 2 It is a schematic diagram of the alignment of the pattern disk and the wafer support seat of the present invention.
[0017] Figure 3 It is a schematic diagram of the exposure gap formed between the pattern disk and the wafer support seat of the present invention.
[0018] Figure 4 It is a schematic diagram of the ultraviolet exposure operation of the present invention.
[0019] Figure 5 The figure is a schematic diagram of the pattern plate alignment operation of the existing wafer exposure machine.
[0020] Figure 6 The figure is a schematic diagram of the alignment between the pattern plate and the wafer support seat of the existing wafer exposure machine.
[0021] Figure 7 The present invention is a schematic diagram of an exposure gap formed between a pattern plate and a wafer support seat of an existing wafer exposure machine.
[0022] Figure 8 A schematic diagram of an existing wafer exposure machine performing ultraviolet exposure operations.
[0023] Explanation of symbols:
[0024] 10: Wafer support
[0025] 20: Graphics disk
[0026] 30: Positioning lens
[0027] 40: Auxiliary alignment lens
[0028] 50:Crystal
[0029] 70: Wafer support
[0030] 72: Graphics disk
[0031] 74: Positioning Shot
[0032] 80: Crystal DETAILED DESCRIPTION
[0033] The present invention provides a wafer exposure machine, please refer to Figures 1 to 4 As can be seen from the figure, the wafer exposure machine of the present invention mainly includes a machine platform, a wafer carrier 10, a pattern disk 20, at least one alignment lens 30 and at least one auxiliary alignment lens 40, wherein the wafer carrier 10 is fixed on the machine platform, and the pattern disk 20 is movably arranged on the machine platform and is located above the wafer carrier 10 and forms an exposure gap with the wafer carrier 10, and a specific circuit layout pattern is formed on the pattern disk 20, the at least one alignment lens 30 is arranged on the machine platform at a position below the wafer carrier 10, and the number of the at least one alignment lens 30 can be two, the at least one auxiliary alignment lens 40 is arranged on the machine platform at a position above the pattern disk 20, and the number of the at least one auxiliary alignment lens 40 can also be two, and the auxiliary alignment lens 40 can be respectively aligned with the alignment lens 30, that is, the auxiliary alignment lens 40 and the alignment lens 30 are linearly opposite.
[0034] Therefore, before placing the wafer 50 on the wafer support 10, the pattern plate 20 may be aligned first. Figure 1As shown, at this time, since the alignment lenses 30 and 40 are arranged above and below the pattern disk 20, the alignment lens 30 located below and the auxiliary alignment lens 40 located above can be used to accurately position the pattern disk 20 at the predetermined position, and then the pattern disk 20 is moved away, and then the wafer 50 coated with the photoresist material is placed on the wafer carrier 10, and then the pattern disk 20 is moved back. At this time, since the auxiliary alignment lens 40 is arranged above the pattern disk 20, although the alignment lens 30 located below the wafer carrier 10 is covered by the opaque wafer 50, it is still possible to detect whether the pattern disk 20 is accurately moved to the predetermined position through the auxiliary alignment lens 40 located above the pattern disk 20, as shown in FIG. Figure 2 As shown, after the pattern disk 20 is moved to the predetermined position, the exposure gap between the pattern disk 20 and the wafer 50 is adjusted up and down, as shown in FIG. Figure 3 As shown, after a specific exposure gap is formed between the pattern disk 20 and the wafer 50, ultraviolet light is emitted by ultraviolet equipment, and the circuit layout pattern on the pattern disk 20 is passed through to harden part of the photoresist material coated on the wafer 50 to complete the exposure operation, and then subsequent etching operations are performed to form a specific circuit layout on the wafer 50.
[0035] Since the present invention has an auxiliary alignment lens 40 disposed above the pattern disk 20, the auxiliary alignment lens 40 can provide an accurate alignment effect for the pattern disk 20 when the alignment lens 30 located below the wafer carrier 10 is shielded by the opaque wafer 50, thereby improving the overall accuracy, yield and operating efficiency of the wafer exposure operation.
[0036] It can be seen from the above content that different modifications and changes can be achieved without departing from the essential spirit and novel concept scope of the present invention, and the specific embodiments disclosed in the present invention are not used to limit the present invention. This disclosure includes all modifications that fall within the scope of the attached patent application.
Claims
1. A bottom-aligned wafer exposure machine, characterized in that: It includes: One machine; A wafer support fixed on the machine platform; and A pattern plate movably disposed on the machine platform, the pattern plate is located above the wafer carrier and an exposure gap is formed between the pattern plate and the wafer carrier, and a specific circuit layout pattern is formed on the pattern plate; At least one alignment lens disposed on the platform below the wafer support seat; and At least one auxiliary alignment lens is arranged on the machine platform and located above the graphic disk.
2. The bottom-aligned wafer exposure machine according to claim 1, characterized in that: The number of alignment lenses is two.
3. The bottom-aligned wafer exposure machine according to claim 1 or 2, characterized in that: The number of auxiliary alignment lenses is two.
4. The bottom-aligned wafer exposure machine according to claim 3, characterized in that: The auxiliary alignment lenses are aligned relative to the alignment lenses respectively.