Method for inducing directional arrangement of carbon nanotubes, carbon nanotube array and application

Abstract

The invention discloses a method for inducing directional arrangement of carbon nanotubes, a carbon nanotube array and application. The method for inducing the directional arrangement of the carbon nanotubes comprises the following steps: depositing the carbon nanotubes on the surface of a metal substrate to form a combined body, wherein at least the part, used for being in contact with the carbon nanotubes, of the metal substrate consists of polycrystalline metal; and carrying out high-temperature annealing treatment on the assembly, so that the polycrystalline metal is subjected to grain boundary migration to be converted into single-crystal metal, and promoting the carbon nanotubes to be directionally arranged along the extension direction of a step formed by a high-index crystal face of the single-crystal metal. According to the method, the carbon nanotubes are deposited on the surface of the metal substrate, high-temperature annealing treatment is carried out, the grain boundary migration phenomenon of the metal substrate during high-temperature annealing treatment is used as driving force for inducing directional arrangement of the carbon nanotubes, and directional arrangement of the carbon nanotubes is caused by the step characteristic of the surface of the high-index single-crystal metal substrate; the structure of the semiconductor type carbon nanotube is not damaged in the high-temperature annealing process, operation is easy and convenient, the preparation process is fast, and the yield is high.

Description

Technical Field

[0001] The present invention relates to the technical field of carbon nanotube materials, and in particular to a method for inducing directional arrangement of carbon nanotubes, a carbon nanotube array and applications. Background Art

[0002] Since the discovery of carbon nanotubes in 1991, this hollow tubular one-dimensional nanomaterial composed of carbon atoms has attracted widespread attention due to its excellent electrical properties, good thermal properties and ultra-high mechanical properties. In the preparation of electrical devices based on carbon nanotubes, in order to give full play to the excellent conductive properties of carbon nanotubes and reduce the unfavorable factors such as the damage to charge transfer caused by the scattering between randomly arranged carbon nanotubes, the preparation of highly oriented carbon nanotubes is a commonly used method.

[0003] There are two main methods for preparing uniformly oriented carbon nanotubes. One is to directly grow a directional array of carbon nanotubes, such as growing a horizontally arranged carbon nanotube array by chemical vapor deposition (CVD). The other is to use electric fields, magnetic fields, mechanical forces, etc. to change the arrangement of carbon nanotubes in a dispersion to make them uniformly oriented.

[0004] When the CVD method is used to directly synthesize horizontally arranged carbon nanotube arrays, the preparation yield and carbon nanotube density are very low. When arranging and assembling carbon nanotubes in a dispersed liquid phase, impurities are often introduced when preparing the carbon nanotube dispersion. For example, when preparing a semiconductor carbon nanotube dispersion, a conjugated polymer needs to be added as a surfactant. In addition, the preparation of a highly dispersed carbon nanotube dispersion usually requires high-power and long-term ultrasound, centrifugation and other operations, which inevitably damage the atomic structure of the carbon nanotubes, that is, the introduction of defective structures. Therefore, it is still difficult to prepare a carbon nanotube array with high cleanliness and excellent performance. Summary of the invention

[0005] In view of the deficiencies in the prior art, the present invention aims to provide a method for inducing directional arrangement of carbon nanotubes, a carbon nanotube array and applications.

[0006] In order to achieve the above-mentioned invention object, the technical solution adopted by the present invention includes:

[0007] In a first aspect, the present invention provides a method for inducing oriented arrangement of carbon nanotubes, comprising:

[0008] Depositing carbon nanotubes onto a surface of a metal substrate to form a composite, wherein at least a portion of the metal substrate in contact with the carbon nanotubes is composed of a polycrystalline metal;

[0009] The assembly is subjected to high temperature annealing treatment to cause the polycrystalline metal to undergo grain boundary migration and transform into a single crystal metal with a high-index crystal plane, and to cause the carbon nanotubes to be oriented along the extension direction of the steps formed by the high-index crystal plane.

[0010] In a second aspect, the present invention further provides a carbon nanotube aligned assembly prepared by the above method, which comprises a metal substrate and carbon nanotubes aligned on the surface of the metal substrate;

[0011] The surface of the metal substrate has a single crystal metal, and a high index crystal plane of the single crystal metal forms a step;

[0012] The carbon nanotubes are oriented and arranged along the extending direction of the steps.

[0013] In a third aspect, the present invention also provides the use of the above-mentioned carbon nanotube oriented arrangement assembly in the preparation of electrical devices.

[0014] Based on the above technical solution, compared with the prior art, the beneficial effects of the present invention at least include:

[0015] The present invention deposits carbon nanotubes on the surface of a metal substrate and performs a high-temperature annealing treatment, utilizes the grain boundary migration phenomenon of the metal substrate during the high-temperature annealing treatment as a driving force to induce the directional arrangement of the carbon nanotubes, and the step characteristics of the surface of the high-index single-crystal metal substrate lead to the directional arrangement of the carbon nanotubes. The high-temperature annealing process does not damage the structure of the semiconductor carbon nanotubes, and the operation is simple, the preparation process is fast, and the yield is high.

[0016] The above description is only an overview of the technical solution of the present invention. In order to enable those skilled in the art to more clearly understand the technical means of the present application and implement them according to the contents of the specification, the following is a description of the preferred embodiments of the present invention in conjunction with detailed drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 is a schematic diagram of the surface state of a metal substrate provided by a typical embodiment of the present invention;

[0018] Figure 2 is a schematic diagram of a carbon nanotube deposition process provided by a typical implementation example of the present invention;

[0019] Figure 3 It is a schematic diagram of the grain boundary migration transformation process provided by a typical implementation case of the present invention;

[0020] Figure 4 It is a schematic diagram of a process of inducing directional arrangement of carbon nanotubes provided by a typical implementation case of the present invention;

[0021] Figure 5aThis is an electron microscope photograph of the surface of the assembly after carbon nanotube deposition provided in a typical embodiment of the present invention;

[0022] Figure 5b This is an electron microscope photograph of the oriented arrangement of carbon nanotubes after high temperature annealing provided in a typical embodiment of the present invention;

[0023] Figure 5c This is a Raman spectrum comparison test diagram of carbon nanotubes before and after oriented arrangement provided by a typical implementation case of the present invention. DETAILED DESCRIPTION

[0024] In view of the deficiencies in the prior art, the inventor of this case has proposed the technical solution of the present invention after long-term research and extensive practice. The technical solution, its implementation process and principle will be further explained as follows.

[0025] In the following description, many specific details are set forth to facilitate a full understanding of the present invention. However, the present invention may also be implemented in other ways different from those described herein. Therefore, the protection scope of the present invention is not limited to the specific embodiments disclosed below.

[0026] Moreover, relational terms such as “first” and “second” are merely used to distinguish one component or method step from another with the same name, but do not necessarily require or imply any such actual relationship or order between these components or method steps.

[0027] join Figure 1-Figure 4 The embodiment of the present invention provides a method for inducing directional arrangement of carbon nanotubes, which comprises the following steps:

[0028] A metal substrate is provided, wherein at least a surface layer of metal of the metal substrate is a polycrystalline metal.

[0029] The carbon nanotubes are deposited on the surface of the metal substrate to form a composite.

[0030] The assembly is subjected to high temperature annealing treatment to cause the polycrystalline metal to undergo grain boundary migration and transform into single crystal metal, and to promote the carbon nanotubes to be oriented along the extension direction of the steps formed by the high index crystal plane of the single crystal metal.

[0031] Among them, the high-index crystal plane referred to in the present invention refers to other index crystal planes whose hkl (Miller index in the crystal structure, also called crystal plane index) is greater than 1. For example, among the crystal planes of metals, there are only three low-index crystal planes ({100}, {110} and {111} crystal planes). Apart from these, the rest can be called high-index crystal planes.

[0032] Based on the above technical solution, the present invention proposes a method for inducing directional arrangement of carbon nanotubes using a metal substrate, specifically as follows Figure 4 As shown in the figure, a metal substrate on which disordered carbon nanotubes are deposited is subjected to high-temperature annealing treatment. The metal substrate grows abnormally during the high-temperature process, and the grain boundaries of the polycrystalline metal domains migrate, a certain domain expands, and finally the polycrystalline metal is transformed into a single crystal metal with a high-index crystal plane. Due to the strong interaction between the carbon nanotubes and the metal substrate, the grain boundary migration process promotes the translation or rotation of the carbon nanotubes, and finally the carbon nanotubes are arranged along the step direction of the high-index crystal plane, forming a directional carbon nanotube array.

[0033] In some embodiments, the method may specifically include: combining the carbon nanotubes with a conjugated polymer and then depositing them on the surface of the metal substrate.

[0034] In some embodiments, the carbon nanotubes have structural defects, and when the high-temperature annealing treatment is performed, the structural defects can be repaired. The specific repair principle should be that the conjugated polymer decomposes to produce carbon atoms during the high-temperature annealing process, and the carbon atoms participate in the repair of the structural defect positions of the carbon nanotubes, thereby significantly reducing the defective structure of the carbon nanotubes. In this preferred embodiment, during high-temperature annealing, on the one hand, the conjugated polymer covering the surface of the semiconductor carbon nanotubes can be removed to obtain pure carbon nanotubes; on the other hand, the defects of the carbon nanotubes can also be partially repaired. Therefore, this method is a method for preparing high-quality directional carbon nanotubes, which has the characteristics of simple operation, fast preparation process, and high yield. It can quickly prepare centimeter-level, highly oriented carbon nanotube arrays. In this process, the role of high-temperature annealing treatment is multiple.

[0035] However, it should be pointed out that based on the basic technical ideas of the present invention, even if the implementation method of conjugated combination of carbon nanotubes and conjugated polymers with more diversified technical effects is not adopted, such as simple carbon nanotubes, or even carbon nanotubes combined with other inorganic substances or metals, as long as the main body is carbon nanotubes, they can be driven by grain boundaries to be oriented. It can be understood that no matter what equivalent implementation method is replaced, as long as the core technical idea of ​​promoting the oriented arrangement of carbon nanotubes by the above-mentioned grain boundary migration is utilized, it belongs to the scope of implementation and protection scope of the present invention.

[0036] In some embodiments, the polycrystalline metal may include any one of copper, gold, and copper-nickel alloy, or a combination of two or more thereof, and is not limited thereto. Any metal that can exhibit the grain boundary migration phenomenon of transformation from polycrystalline to single crystal may be used, and more choices of specific polycrystalline metals can be obtained by those skilled in the art through various technical literature or experiments without creative labor; however, it should be noted that when using a metal with a lower melting point as the polycrystalline metal, such as gold, the temperature during high-temperature annealing should not exceed the melting point of the metal.

[0037] Regarding specific implementation details, in some embodiments, the carbon nanotubes may include metallic carbon nanotubes and / or semiconducting carbon nanotubes.

[0038] In some embodiments, the carbon nanotube dispersion is brought into sufficient contact with the surface of the metal substrate so that the carbon nanotubes therein are deposited on the surface of the metal substrate, thereby forming the assembly;

[0039] In some embodiments, the carbon nanotube deposition method may include any one of a dispersion liquid spin coating method, a pulling method, an immersion method, and a drop coating method, or a combination of two or more thereof.

[0040] In the present invention, carbon nanotubes can be in various forms, such as metallic, semiconductor, or mixed carbon nanotubes; the methods for depositing carbon nanotubes onto a metal substrate can be various, such as dispersion liquid spin coating, pulling method, immersion method, and drop coating method, and are not limited thereto, as long as carbon nanotubes that can be deposited on the surface of a metal substrate to form a relatively more disordered arrangement can be obtained.

[0041] In some embodiments, the method may specifically include:

[0042] The metal substrate is immersed in the dispersion containing the carbon nanotubes, and then taken out and dried to complete the deposition of the carbon nanotubes.

[0043] In some embodiments, the mass concentration of the carbon nanotubes in the dispersion may be 0.1 μg / mL-10 μg / mL.

[0044] In some embodiments, the metal substrate may be immersed in the dispersion for a period of 0.5 h to 24 h.

[0045] In some embodiments, the high temperature annealing process may be performed in a hydrogen-containing atmosphere.

[0046] In some embodiments, the hydrogen-containing atmosphere may include hydrogen gas and an inert gas.

[0047] In some embodiments, the volume fraction of hydrogen in the hydrogen-containing atmosphere may be 10%-50%.

[0048] In some embodiments, the high temperature annealing treatment may be performed at a temperature of 1000-1090° C. and for a time of 0.5-12 h.

[0049] In some embodiments, the method may further include: before depositing the carbon nanotubes, cleaning the surface of the metal substrate.

[0050] In some embodiments, the method may further include: before performing the high temperature annealing treatment, performing a deoxygenation treatment on the atmosphere of the assembly.

[0051] As some typical application examples of the above technical solution, the above method can be implemented by the following steps S1-S5:

[0052] S1: Clean the polycrystalline metal substrate with acetone, ethanol, acetic acid, and deionized water in sequence, and dry the polycrystalline metal substrate with a nitrogen or argon gun for later use.

[0053] S2: Immerse the cleaned polycrystalline metal substrate obtained in step S1 in a dispersion containing semiconductor or metallic nanotubes to deposit semiconductor or metallic nanotubes on the polycrystalline metal substrate. The density and quantity of the deposited semiconductor or metallic carbon nanotubes are related to the density of the semiconductor or metallic nanotube dispersion and the deposition time. In addition to the immersion method, the carbon nanotubes can also be placed on the polycrystalline metal substrate by using a dispersion spin coating method, a pull-up method, or a drop coating method.

[0054] S3: placing the carbon nanotube / polycrystalline metal substrate sample prepared in step S2 in a CVD tube furnace, and introducing inert gas to deoxygenate the CVD tube furnace.

[0055] S4: introducing hydrogen and argon into the CVD tube furnace for high temperature annealing treatment.

[0056] S5: Slowly cool down to room temperature, usually natural cooling is sufficient.

[0057] Wherein, in step S4, hydrogen and argon are introduced into the CVD tube furnace for high temperature annealing treatment, which specifically includes the following process:

[0058] The temperature of the tube furnace is raised to 1000-1090°C, and the temperature and gas flow are kept constant for 0.5-12 hours at a flow rate of 10-500 sccm of hydrogen and 10-500 sccm of argon. The polycrystalline metal may be copper, platinum, gold, etc. The dimensions of the polycrystalline metal foil used in the above example are 1-50 cm in length, 1-50 cm in width, and 0.01-0.5 mm in thickness.

[0059] However, the various feasible implementations are not limited to the scope of the above examples. For example, instead of using metal foil as the metal substrate, the same function can be achieved by using a block or metal coating method. Specifically, it can be in the form of a metal foil or a metal film evaporated onto an insulating substrate. There is no specific requirement for the surface crystal plane index of the high-index single-crystalline copper required for the oriented carbon nanotube arrangement. It only needs to have a step characteristic as long as it can ensure that the above-mentioned grain boundary migration phenomenon can occur on the surface of the metal substrate.

[0060] Corresponding to the above method, the second aspect of an embodiment of the present invention also provides a carbon nanotube directional arrangement assembly obtained by the above method, which includes a metal substrate and carbon nanotubes directional arranged on the surface of the metal substrate; the surface of the metal substrate has a single crystal metal, and the high-index crystal plane of the single crystal metal forms steps; the carbon nanotubes are directional arranged along the extension direction of the steps.

[0061] As a further application of the above product, the second aspect of the embodiment of the present invention further provides the use of the above carbon nanotube oriented arrangement assembly in the preparation of electrical devices.

[0062] The main technical contribution of the present invention is that it provides a technical method for the efficient directional arrangement of carbon nanotubes, and the above-mentioned application is its extended technical solution. For example, the directional arranged semiconductor carbon nanotubes are generally used as the channel material of field effect transistors; they can also be used as the core structure of gas, mechanical sensors, and flexible wearable devices; of course, the specific applications are not limited to the scope of this example.

[0063] The technical solution of the present invention is further described in detail below through several embodiments and in conjunction with the accompanying drawings. However, the selected embodiments are only used to illustrate the present invention, and do not limit the scope of the present invention.

[0064] Example 1

[0065] This embodiment illustrates a method for inducing directional alignment of carbon nanotubes, which is specifically as follows:

[0066] S1: Provide a piece of copper foil as a metal substrate, use acetone, ethanol, acetic acid, and deionized water to clean the polycrystalline metal substrate in sequence, and blow dry the polycrystalline metal substrate with a nitrogen or argon gun for later use.

[0067] S2: Immerse the cleaned polycrystalline metal substrate obtained in step S1 in a dispersion containing semiconductor carbon nanotubes to deposit semiconductor carbon nanotubes on the surface of the polycrystalline metal substrate. In the dispersion, the mass concentration of semiconductor carbon nanotubes is 0.6 μg / mL, and the carbon nanotubes are conjugated with conjugated polymers (poly[9-(1-octylnonyl)-9H-carbazole], poly(9,9-dioctylfluorene-alt-bithiophene) or poly(9,9-dioctylfluorene-alt-benzothiadiazole)) to prepare a semiconductor carbon nanotube dispersion. The metal substrate is immersed in the dispersion for 5 hours. The surface state of the obtained assembly is as follows: Figure 5a As shown, the carbon nanotubes on the surface are arranged in a disordered manner.

[0068] S3: placing the carbon nanotube / polycrystalline metal substrate assembly prepared in step S2 in a CVD tube furnace, and introducing an inert gas to deoxygenate the CVD tube furnace.

[0069] S4: hydrogen and argon are introduced into the CVD tube furnace at flow rates of 20 sccm and 100 sccm respectively, and a high temperature annealing treatment is performed at a temperature of 1050° C. for 2 h.

[0070] S5: After the high temperature annealing treatment is completed, the temperature is slowly lowered to room temperature to obtain a combination of carbon nanotubes with directional arrangement of carbon nanotubes on the surface and a metal substrate. The arrangement state of the carbon nanotubes on the surface is as follows: Figure 5b As shown, it can be clearly seen that after high-temperature annealing, the carbon nanotubes on the surface have a very obvious directional arrangement trend.

[0071] Before and after high temperature annealing, Raman spectroscopy was performed on the surface carbon nanotubes, such as Figure 5c As shown, the ratio of the intensity of the defect peak (D peak) to the graphite structure peak (G peak) before high-temperature annealing is about 0.06, while the ratio of the intensity of the D peak to the G peak of the carbon nanotube after high-temperature annealing is about 0.03. The reduction of the defect peak indicates that during the high-temperature annealing process, the defects of the semiconductor carbon nanotubes are reduced and the structure of the carbon nanotubes is partially repaired. This shows that the technical solution provided by the present invention can partially repair the structural defects of the carbon nanotubes introduced in the preparation of the carbon nanotube dispersion during the high-temperature annealing process.

[0072] In addition, during the high-temperature annealing process, the conjugated polymer covering the surface of the semiconductor carbon nanotubes can also be removed. The conjugated polymer will be decomposed into gaseous small molecules during the high-temperature treatment process, and most of them will be carried away by the carrier gas. Carbon nanotubes are hollow structures composed of carbon atoms and have good chemical stability. They can maintain their structural integrity during high-temperature processes. Figure 5c The Raman spectrum curve changes of the semiconductor carbon nanotubes before and after annealing were also compared. It can be seen that the Raman spectrum of the semiconductor tube after annealing is basically consistent with the Raman spectrum curve before annealing, and the radial breathing mode (RBM) peak is very strong, indicating that the high-temperature annealing process did not damage the structure of the semiconductor carbon nanotubes.

[0073] The method of inducing directional arrangement of carbon nanotubes illustrated in this embodiment relies on the grain boundary migration of polycrystalline metal to single crystal metal. It has been proved that the efficiency of converting polycrystalline metal to single crystal metal is relatively high. Therefore, the preparation of directional arranged carbon nanotube arrays based on this method has the advantages of simple operation, fast preparation process and high yield.

[0074] Example 2

[0075] This embodiment illustrates a method for inducing oriented arrangement of carbon nanotubes, which is substantially the same as that of embodiment 1, except that:

[0076] The metal substrate is replaced with gold foil, the temperature of high temperature annealing is adjusted to 1040°C, and the type of carbon nanotubes is metallic carbon nanotubes.

[0077] Finally, this embodiment can still achieve the same degree of induced directional arrangement of carbon nanotubes on the gold foil surface.

[0078] Example 3

[0079] This embodiment illustrates a method for inducing oriented arrangement of carbon nanotubes, which is substantially the same as that of embodiment 1, except that:

[0080] The metal substrate is replaced with a copper-nickel alloy (Cu 90 Ni 10 ), the temperature of high temperature annealing is adjusted to 1050° C., and the type of carbon nanotubes is mixed carbon nanotubes, that is, the original carbon nanotube dispersion that is not separated and purified by conjugated polymer.

[0081] Finally, this embodiment can still achieve the same degree of induced directional arrangement of carbon nanotubes on the surface of the copper-nickel alloy.

[0082] Example 4

[0083] This embodiment illustrates a method for inducing oriented arrangement of carbon nanotubes, which is substantially the same as that of embodiment 1, except that:

[0084] The concentration of carbon nanotubes in the dispersion was 10 μg / mL, and the metal substrate was immersed in the dispersion for 0.5 h;

[0085] The temperature of high temperature annealing was adjusted to 1090° C., the time was adjusted to 0.5 h, and the hydrogen gas volume fraction was 10%.

[0086] Finally, this embodiment can still achieve the same degree of induced directional arrangement of carbon nanotubes on the copper foil surface.

[0087] Example 5

[0088] This embodiment illustrates a method for inducing oriented arrangement of carbon nanotubes, which is substantially the same as that of embodiment 1, except that:

[0089] The concentration of carbon nanotubes in the dispersion was 0.1 μg / mL, and the metal substrate was immersed in the dispersion for 24 h;

[0090] The temperature of high temperature annealing was adjusted to 1000° C., the time was adjusted to 12 h, and the hydrogen gas volume fraction was 20%.

[0091] Finally, this embodiment can still achieve the same degree of induced directional arrangement of carbon nanotubes on the copper foil surface.

[0092] Based on the above embodiments, it can be clearly seen that the embodiments of the present invention deposit carbon nanotubes on the surface of a metal substrate and perform a high-temperature annealing treatment, and utilize the grain boundary migration phenomenon of the metal substrate during the high-temperature annealing treatment as a driving force to induce the directional arrangement of the carbon nanotubes. The step characteristics of the surface of the high-index single-crystal metal substrate lead to the directional arrangement of the carbon nanotubes. The high-temperature annealing process does not damage the structure of the semiconductor carbon nanotubes, and the operation is simple, the preparation process is fast, and the yield is high.

[0093] In addition, the above-mentioned embodiment utilizes the grain boundary migration of the high-index single-crystal metal substrate as the driving force for inducing the directional arrangement of carbon nanotubes for the first time, and the directional arrangement of carbon nanotubes is caused based on the step characteristics of the surface of the high-index single-crystal metal substrate; it proposes for the first time to utilize the decomposition products of conjugated polymers as the carbon source for repairing carbon nanotubes, to partially repair the defective structure of carbon nanotubes, and to improve the structural integrity of carbon nanotubes, thereby providing the application potential of carbon nanotubes in electrical, mechanical, thermal and other aspects.

[0094] It should be understood that the above embodiments are only for illustrating the technical concept and features of the present invention, and their purpose is to enable people familiar with the technology to understand the content of the present invention and implement it accordingly, and they cannot be used to limit the protection scope of the present invention. Any equivalent changes or modifications made according to the spirit of the present invention should be included in the protection scope of the present invention.

Claims

1. A method for inducing directional arrangement of carbon nanotubes, characterized in that: include: Depositing carbon nanotubes onto a surface of a metal substrate to form a composite, wherein at least a portion of the metal substrate in contact with the carbon nanotubes is composed of a polycrystalline metal; The assembly is subjected to high temperature annealing treatment to cause the polycrystalline metal to undergo grain boundary migration and transform into a single crystal metal with a high-index crystal plane, and to cause the carbon nanotubes to be oriented along the extension direction of the steps formed by the high-index crystal plane.

2. The method according to claim 1, characterized in that Specifically include: The carbon nanotubes are combined with conjugated polymers and then deposited on the surface of the metal substrate.

3. The method according to claim 2, characterized in that The carbon nanotubes have structural defects, and when the high-temperature annealing treatment is performed, the structural defects are repaired.

4. The method according to claim 1, characterized in that The polycrystalline metal includes any one of copper, gold, and copper-nickel alloy, or a combination of two or more thereof; And / or, the carbon nanotubes include metallic carbon nanotubes and / or semiconductor carbon nanotubes.

5. The method according to claim 1, characterized in that The carbon nanotube dispersion is brought into full contact with the surface of the metal substrate so that the carbon nanotubes therein are deposited on the surface of the metal substrate, thereby forming the assembly.

6. The method according to claim 5, characterized in that The carbon nanotube deposition method includes any one of a dispersion liquid spin coating method, a pulling method, an immersion method, and a drop coating method, or a combination of two or more thereof.

7. The method according to claim 6, characterized in that The mass concentration of the carbon nanotubes in the dispersion is 0.1 μg / mL-10 μg / mL; and / or, the metal substrate is immersed in the dispersion for a period of 0.5 h to 24 h; Preferably, the high temperature annealing treatment is performed in a hydrogen-containing atmosphere; Preferably, the hydrogen-containing atmosphere comprises hydrogen and an inert gas; Preferably, the volume fraction of hydrogen in the hydrogen-containing atmosphere is 10%-50%; Preferably, the high temperature annealing treatment is performed at a temperature of 1000-1090° C. and a time of 0.5-12 h.

8. The method according to claim 1, characterized in that Also includes: Before depositing the carbon nanotubes, the surface of the metal substrate is cleaned; And / or, before performing the high temperature annealing treatment, a step of deoxygenating the atmosphere of the assembly.

9. A carbon nanotube array, characterized in that: The carbon nanotube array is prepared by the method described in any one of claims 1-8.

10. Use of the carbon nanotube array according to claim 9 in preparing electrical devices.

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