Semiconductor electroplating solution and preparation method thereof

Abstract

The invention relates to the field of semiconductor electroplating, and particularly discloses a semiconductor electroplating solution and a preparation method thereof. Comprising the following raw materials in parts by weight: 14-22 parts of copper sulfate, 11-14 parts of silver nitrate, 3-6 parts of a nonionic surfactant and 1.5-3.5 parts of sodium dodecylphenol polyoxyethylene ether sulfate. 7 to 12 parts of a buffering agent; 12 parts to 17 parts of an acid-base regulator; according to the invention, the electroplating production environmental protection property and the use safety of the existing electroplated semiconductor can be effectively improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor electroplating, and more specifically, to a semiconductor electroplating solution and a preparation method thereof. Background Art

[0002] Semiconductors refer to materials whose electrical conductivity at room temperature is between that of conductors and insulators. Today, they are used in integrated circuits, consumer electronics, communication systems, photovoltaic power generation, lighting, high-power power conversion and other fields. For example, diodes are devices made of semiconductors.

[0003] Existing semiconductors often require nickel metal during electroplating. Nickel metal can combine with other metals during the electroplating process to form a dense metal film. The nickel alloy metal film has excellent wear resistance, corrosion resistance and conductivity, so it is widely used in industry, construction, electronics, aerospace and other fields.

[0004] However, as a heavy metal, nickel's harm to the environment and human health cannot be ignored. Excessive intake of nickel by the human body may cause health problems in the respiratory system, digestive system, nervous system, etc. In addition, nickel may also pollute the environment. For example, when semiconductors are electroplated, if the electroplating waste liquid is not properly handled, it is easy to cause the death of aquatic organisms and damage the ecosystem due to excessive nickel content. Summary of the invention

[0005] In order to effectively improve the environmental protection and safety of electroplating production of existing electroplated semiconductors, the present application provides a semiconductor electroplating solution and a preparation method thereof.

[0006] In a first aspect, the present application provides a semiconductor electroplating solution, which adopts the following technical solution: A semiconductor electroplating solution is made of the following raw material components in parts by weight: Copper sulfate: 14 to 22 parts; Silver nitrate: 11 to 14 parts; Nonionic surfactant: 3 to 6 parts; Sodium dodecylphenol polyoxyethylene ether sulfate: 1.5 to 3.5 parts; Buffer: 7 to 12 parts; Acid-base regulator: 12 to 17 parts; The nonionic surfactant is composed of polyoxyethylene ether and polyvinyl alcohol, and the weight ratio of the polyoxyethylene ether to the polyvinyl alcohol is (2-5):1.

[0007] By adopting the above technical scheme, the compounding effect between polyoxyethylene ether, polyvinyl alcohol and sodium dodecylphenol polyoxyethylene ether sulfate is utilized to produce a further synergistic effect with copper sulfate and silver nitrate, so that the semiconductor substrate can be electroplated under nickel-free conditions, and the uniformity of the electroplating layer is improved while the semiconductor substrate has good wear resistance, corrosion resistance and conductivity. Among them, polyoxyethylene ether and polyvinyl alcohol have good solubility, and can effectively extend the molecular chain of sodium dodecylphenol polyoxyethylene ether sulfate under high temperature conditions, so that the metal copper and silver ions in the solution are better extended and diffused, and a film is formed by mutual adsorption with the metal copper and silver ions in the solution, which can effectively improve the dispersion uniformity of copper and silver ions in the electroplating solution. At the same time, polyoxyethylene ether and polyvinyl alcohol form a high molecular weight network structure in the solution, so that the metal copper and silver ions in the solution can flow better, and the adsorption uniformity of sodium dodecylphenol polyoxyethylene ether sulfate and metal copper and silver ions is better increased, so that the compound of polyoxyethylene ether, polyvinyl alcohol and sodium dodecylphenol polyoxyethylene ether sulfate can effectively cooperate with copper sulfate and silver nitrate to form a dense and smooth electroplating layer on the surface of the semiconductor, thereby achieving the purpose of enhancing the wear resistance, corrosion resistance and conductivity of nickel-free electroplated semiconductors.

[0008] Optionally, the average molecular weight of the polyoxyethylene ether is 400 g / mol.

[0009] Optionally, the viscosity of the polyvinyl alcohol is 15.0 to 20.0 mPa·s.

[0010] Optionally, the concentration of the sodium dodecylphenol polyoxyethylene ether sulfate is 6%.

[0011] By adopting the above technical scheme and selecting polyoxyethylene ether, polyvinyl alcohol and sodium dodecylphenol polyoxyethylene ether sulfate materials with specific parameters, the compounding effect of the three in the solution can be further optimized, so that a sleeve material with better wear resistance, corrosion resistance and conductivity can be obtained on the surface of the semiconductor substrate.

[0012] Optionally, the buffer is one or both of disodium hydrogen phosphate and sodium bicarbonate.

[0013] Optionally, the acid-base regulator is one or both of basic copper oxide and sodium hydroxide. By adopting the above technical solution and selecting specific buffer and acid-base regulator materials, the pH value in the solution can be better balanced, the precipitation of metal ions can be inhibited, the stability of metal ions can be maintained, and it is conducive to uniform deposition on the surface of the workpiece to obtain an electroplating layer with better performance, thereby effectively extending the service life of nickel-free electroplated semiconductors.

[0014] Optionally, the sodium dodecylphenol polyoxyethylene ether sulfate is pretreated and modified, and the pretreatment and modification step includes: adding aluminum sulfate and the sodium dodecylphenol polyoxyethylene ether sulfate to be pretreated and modified into a solvent to form a mixed solution, heating the solution to react, and obtaining a pretreated sodium dodecylphenol polyoxyethylene ether sulfate mixed solution after the reaction is completed.

[0015] By adopting the above technical scheme, aluminum ions are complexed on the molecular chains of sodium dodecylphenol polyoxyethylene ether sulfate to form metal-block copolymers, thereby improving the surface properties of the molecular chains of sodium dodecylphenol polyoxyethylene ether sulfate, so that sodium dodecylphenol polyoxyethylene ether sulfate can better produce a complexing effect with polyoxyethylene ether and polyvinyl alcohol, further enhancing the adsorption effect between metal copper and silver ions in the solution and the molecular chains of sodium dodecylphenol polyoxyethylene ether sulfate, thereby achieving the purpose of improving the stability of the electroplating layer.

[0016] Optionally, the molar concentration of the aluminum sulfate in the solvent is 0.45 to 0.6 mol / L.

[0017] By adopting the above technical scheme and adjusting the aluminum sulfate to a suitable concentration, the aluminum sulfate can be more evenly complexed with the molecular chain of sodium dodecylphenol polyoxyethylene ether sulfate, thereby improving the flow effect of the molecular chain surface of sodium dodecylphenol polyoxyethylene ether sulfate on the liquid, thereby better enhancing the adsorption of metal copper and silver ions in the solution on the molecular chain surface of sodium dodecylphenol polyoxyethylene ether sulfate.

[0018] In a second aspect, the present application provides a method for preparing a semiconductor electroplating solution using the following technical solution: A method for preparing a semiconductor electroplating solution comprises the following steps: Add copper sulfate, silver nitrate and acid-base regulator into the solvent according to weight ratio, and stir to form solution A; Add polyoxyethylene ether, polyvinyl alcohol, sodium dodecylphenol polyoxyethylene ether sulfate and buffer into the solvent according to weight ratio, and heat and stir to form solution B; Solution A and solution B are stirred and mixed, and then filtered and allowed to stand to prepare an electroplating solution.

[0019] By adopting the above technical scheme, polyoxyethylene ether, polyvinyl alcohol, and sodium dodecylphenol polyoxyethylene ether sulfate can be compounded to form solution B, and then mixed with solution A containing copper sulfate and silver nitrate, so that the metallic copper and silver ions in the mixed solution can be evenly dispersed, thereby effectively improving the use effect of the nickel-free electroplating solution.

[0020] In summary, this application has the following beneficial effects: 1. The present application utilizes the compounding effect between polyoxyethylene ether, polyvinyl alcohol and sodium dodecylphenol polyoxyethylene ether sulfate to produce a further synergistic effect with copper sulfate and silver nitrate, thereby enabling electroplating of semiconductor substrates under nickel-free conditions, and achieving the effect of improving the uniformity of the electroplating layer while also enabling the semiconductor substrate to have good wear resistance, corrosion resistance and electrical conductivity; 2. The present application improves the surface properties of the molecular chain of sodium dodecylphenol polyoxyethylene ether sulfate by allowing aluminum ions to undergo a complex reaction on the molecular chain of sodium dodecylphenol polyoxyethylene ether sulfate and forming a metal-block copolymer, thereby enabling the sodium dodecylphenol polyoxyethylene ether sulfate to better complex with polyoxyethylene ether and polyvinyl alcohol, further enhancing the adsorption effect between the metal copper and silver ions in the solution and the molecular chain of sodium dodecylphenol polyoxyethylene ether sulfate, thereby achieving the purpose of improving the stability of the electroplating layer. DETAILED DESCRIPTION

[0021] The present application is further described in detail below in combination with preparation examples, embodiments, comparative examples and application examples.

[0022] Preparation Example 1 Preparation method of pretreated modified sodium dodecylphenol polyoxyethylene ether sulfate: 3.5 kg of sodium dodecylphenol polyoxyethylene ether sulfate and 1 kg of aluminum sulfate were weighed according to the weight ratio and added into 10 L of water. The temperature was raised to 50° C. and stirred to mix evenly to obtain the pretreated sodium dodecylphenol polyoxyethylene ether sulfate.

[0023] Preparation Example 2 Preparation method of pretreated modified sodium dodecylphenol polyoxyethylene ether sulfate: 3.5 kg of sodium dodecylphenol polyoxyethylene ether sulfate and 1.6 kg of aluminum sulfate were weighed according to the weight ratio and added into 10 L of water. The temperature was raised to 50° C. and stirred to mix evenly to obtain the pretreated sodium dodecylphenol polyoxyethylene ether sulfate.

[0024] Preparation Example 3 Preparation method of pretreated modified sodium dodecylphenol polyoxyethylene ether sulfate: 3.5 kg of sodium dodecylphenol polyoxyethylene ether sulfate and 2.1 kg of aluminum sulfate were weighed according to the weight ratio and added into 10 L of water. The temperature was raised to 50° C. and stirred to mix evenly to obtain the pretreated sodium dodecylphenol polyoxyethylene ether sulfate.

[0025] Example 1 A semiconductor electroplating solution is prepared by the following steps: Step 1): 14 kg of copper sulfate, 14 kg of silver nitrate and 12 kg of basic copper oxide were weighed according to the weight ratio and added into 150 L of water, and stirred and mixed to form solution A; Step 2): 5 kg of polyoxyethylene ether, 1 kg of polyvinyl alcohol, 1.5 kg of sodium dodecylphenol polyoxyethylene ether sulfate and sodium bicarbonate were weighed and added to the solvent according to the weight ratio, the temperature was raised to 60° C., and the mixture was stirred at a constant temperature to form a solution B; Step 3): Solution A and solution B are stirred and mixed evenly, and then filtered through a filter with a mesh size of 0.6 μm, and after standing, an electroplating solution is obtained.

[0026] The average molecular weight of the polyoxyethylene ether is 200 g / mol, the viscosity of the polyvinyl alcohol is 5.0-7.0 mPa·s, and the concentration of the sodium dodecylphenol polyoxyethylene ether sulfate is 3%.

[0027] Example 2 A semiconductor electroplating solution is prepared by the following steps: Step 1): 22 kg of copper sulfate, 11 kg of silver nitrate and 17 kg of basic copper oxide were weighed according to weight ratio and added to the solvent, and stirred to mix well to form solution A; Step 2): 2 kg of polyoxyethylene ether, 1 kg of polyvinyl alcohol, 3.5 kg of sodium dodecylphenol polyoxyethylene ether sulfate and sodium bicarbonate were weighed according to the weight ratio and added into the solvent, the temperature was raised to 60° C., and the mixture was stirred at a constant temperature to form a solution B; Step 3): Solution A and solution B are stirred and mixed evenly, and then filtered through a filter with a mesh size of 0.6 μm, and after standing, an electroplating solution is obtained.

[0028] The average molecular weight of the polyoxyethylene ether is 200 g / mol; the viscosity of the polyvinyl alcohol is 5.0-7.0 mPa·s, and the molecular weight is 25,000-35,000; and the concentration of sodium dodecylphenol polyoxyethylene ether sulfate is 3%.

[0029] Example 3 A semiconductor electroplating solution, which differs from Example 2 in that the average molecular weight of the polyoxyethylene ether is 400 g / mol.

[0030] Example 4 A semiconductor electroplating solution, which is different from Example 2 in that the viscosity of the polyvinyl alcohol is 15.0-20.0 mPa·s and the molecular weight is 120,000-150,000.

[0031] Example 5 A semiconductor electroplating solution, which is different from Example 3 in that the concentration of sodium dodecylphenol polyoxyethylene ether sulfate is 6%.

[0032] Example 6 A semiconductor electroplating solution, which differs from Example 5 in that sodium bicarbonate is replaced by disodium hydrogen phosphate.

[0033] Example 7 A semiconductor electroplating solution, which differs from Example 5 in that sodium bicarbonate is replaced by disodium hydrogen phosphate and sodium bicarbonate, wherein the disodium hydrogen phosphate and sodium bicarbonate are used in a ratio of 1:1.

[0034] Example 8 A semiconductor electroplating solution, which differs from Example 5 in that basic copper oxide is replaced by sodium hydroxide.

[0035] Example 9 A semiconductor electroplating solution, which differs from Example 5 in that basic copper oxide is replaced by sodium hydroxide and basic copper oxide, wherein the sodium hydroxide and basic copper oxide are used in a ratio of 1:1.

[0036] Example 10 A semiconductor electroplating solution, which is different from Example 5 in that the sodium dodecylphenol polyoxyethylene ether sulfate is a pretreated and modified sodium dodecylphenol polyoxyethylene ether sulfate mixed solution obtained in Preparation Example 1.

[0037] Embodiment 11 A semiconductor electroplating solution, which is different from Example 5 in that the sodium dodecylphenol polyoxyethylene ether sulfate is a pretreated and modified sodium dodecylphenol polyoxyethylene ether sulfate mixed solution obtained in Preparation Example 2.

[0038] Example 12 A semiconductor electroplating solution, which is different from Example 5 in that the sodium dodecylphenol polyoxyethylene ether sulfate is a pretreated and modified sodium dodecylphenol polyoxyethylene ether sulfate mixed solution obtained in Preparation Example 3.

[0039] Comparative Example 1 The difference between this comparative example and Example 1 is that the polyoxyethylene ether is replaced by an equal amount of fatty alcohol polyoxyethylene ether.

[0040] Comparative Example 2 The difference between this comparative example and Example 1 is that polyvinyl alcohol is replaced by an equal amount of fatty alcohol polyoxyethylene ether.

[0041] Comparative Example 3 The difference between this comparative example and Example 1 is that the sodium dodecylphenol polyoxyethylene ether sulfate is replaced by an equal amount of fatty alcohol polyoxyethylene ether.

[0042] Comparative Example 4 The difference between this comparative example and Example 1 is that polyoxyethylene ether, polyvinyl alcohol and sodium dodecylphenol polyoxyethylene ether sulfate are all replaced by equal amounts of fatty alcohol polyoxyethylene ether.

[0043] Application Example 1-16 The surface of the silicon chip semiconductor substrate is electrolytically degreased with an ethanol solvent having a concentration of 10%. After being taken out, the surface of the silicon chip semiconductor substrate is cleaned and then pickled with 10% sulfuric acid. Then, the silicon chip semiconductor substrate after acid pickling and cleaning is taken out, and the silicon chip semiconductor substrate is placed in the electroplating solution prepared in Examples 1-12 and Comparative Examples 1-4 for electroplating, so that metal ions are deposited on the semiconductor surface to form a metal electroplating layer. Then, the silicon chip semiconductor substrate after electroplating and cleaning is annealed for 0.5h under nitrogen protection at 500°C, and then the silicon chip semiconductor substrate is cooled to room temperature. Finally, the silicon chip semiconductor substrate is polished, cleaned, dried and cooled to obtain an electroplated silicon chip semiconductor.

[0044] Performance testing 1) Thickness test The volume of the silicon chip semiconductor substrate in Application Example 1-16 is 5 cm 3 The samples were placed in an ellipsometer for thickness measurement. The smaller the change in the thickness of the electroplating layer at multiple positions in the sample, the better the uniformity of the electroplating layer of the silicon chip semiconductor substrate. Among them, if the thickness distribution of the electroplating layer is uniform, it is recorded as "excellent", and if the thickness distribution is uneven, it is recorded as "poor".

[0045] 2) Adhesion test The volume of the silicon chip semiconductor substrate in Application Example 1-16 is 5 cm 3 The samples are taken, and then according to the "GB / T5270-2005 Test method for adhesion strength of electrodeposited and chemically deposited metal coatings on metal substrates", a tensile test is performed on multiple samples separately. The stretching is stopped when cracks appear on the surface of the sample, and the tensile force value (N) of the tensile testing machine is recorded at this time. The larger the tensile force value, the better the wear resistance of the electroplating layer.

[0046] 3) Corrosion resistance test The volume of the silicon chip semiconductor substrate in Application Example 1-16 is 5 cm 3 For the samples, the thickness at multiple positions was measured by ellipsometer, and the average value was taken and recorded as a1. The samples were then immersed in 98% concentrated sulfuric acid for 2 hours. After being taken out, the thickness at multiple positions was measured by ellipsometer, and the average value was taken and recorded as a2. The thickness difference (nm) before and after immersion of multiple samples a1-a2 was calculated. The smaller the thickness difference, the better the corrosion resistance of the electroplating layer of the semiconductor substrate of the silicon chip.

[0047] 4) Conductivity test The volume of the silicon chip semiconductor substrate in Application Example 1-16 is 5 cm 3According to GB / T 6616-2023 Test method for resistivity of semiconductor wafers and sheet resistance of semiconductor thin films, the conductivity (S / m) of multiple samples at room temperature is tested. The higher the conductivity value, the better the conductivity of the electroplating layer of the semiconductor substrate of the silicon chip.

[0048] Table 1-Summary of test data for application example 1-16 Tensile force Thickness difference Conductivity Thickness uniformity Application Example 1 3200 4.7 0.0025 excellent Application Example 2 3250 4.6 0.0029 excellent Application Example 3 3320 4.3 0.0031 excellent Application Example 4 3327 4.2 0.0032 excellent Application Example 5 3335 3.9 0.0037 excellent Application Example 6 3430 3.7 0.0043 excellent Application Example 7 3480 3.6 0.0047 excellent Application Example 8 3410 3.8 0.0038 excellent Application Example 9 3450 3.7 0.0045 excellent Application Example 10 3780 2.4 0.0072 excellent Application Example 11 3970 1.9 0.0093 excellent Application Example 12 3990 1.8 0.0098 excellent Application Example 13 2050 10.8 0.0004 Difference Application Example 14 2065 10.5 0.0006 Difference Application Example 15 2190 9.8 0.0012 Difference Application Example 16 2200 9.7 0.0015 Difference According to the comparison of the test data of Application Example 1 and Application Example 16 in Table 1, the electroplating layer of the silicon chip semiconductor substrate prepared according to the technical solution of the present application has greatly improved wear resistance, corrosion resistance and electrical conductivity compared to the electroplating layer of the existing silicon chip semiconductor substrate to which polyoxyethylene ether, polyvinyl alcohol and sodium dodecylphenol polyoxyethylene ether sulfate are not added, and while effectively optimizing the various properties of the existing nickel-free electroplated semiconductor substrate, the thickness uniformity of the electroplating layer of the silicon chip semiconductor substrate can also be effectively improved, thereby extending the service life of the nickel-free electroplated semiconductor substrate of the present application, and further reducing the use of nickel metal to achieve the purpose of reducing harm to the human body and the ecology; In addition, by comparing the experimental data of Application Example 1 and Application Examples 13-15, it can be seen that if the synergistic effect of polyoxyethylene ether, polyvinyl alcohol and sodium dodecylphenol polyoxyethylene ether sulfate is destroyed in the system, the wear resistance, corrosion resistance and conductivity of the electroplated layer of the prepared silicon chip semiconductor substrate and the uniformity of the electroplated layer will all be reduced to varying degrees, indicating that the three are indispensable in the electroplating solution of the technical solution of the present application. It is thus known that the prerequisite for improving the performance of the electroplated layer of the silicon chip semiconductor substrate of the present application is the synergistic cooperation of the three to obtain a more effective synergistic effect on the electroplated layer of the silicon chip semiconductor substrate.

[0049] According to the comparison of the experimental data of Application Examples 1-2 in Table 1, it can be seen that when the inventor controls the weight ratio of polyoxyethylene ether, polyvinyl alcohol and sodium dodecylphenol polyoxyethylene ether sulfate in the electroplating solution, the wear resistance, corrosion resistance and conductivity of the electroplated layer thickness of the silicon chip semiconductor substrate of the present application can be better improved, thereby further improving the service life of the electroplated layer of the silicon chip semiconductor substrate of the present application.

[0050] According to the comparison of the experimental data of application examples 2-5 in Table 1, it can be seen that when the inventor uses polyoxyethylene ether, polyvinyl alcohol and sodium dodecylphenol polyoxyethylene ether sulfate with specific physical parameters for addition, the adhesion performance and conductivity of the electroplating layer of the silicon chip semiconductor substrate of the present application can be further enhanced, and at the same time, the thickness difference before and after corrosion can be more effectively reduced, thereby more effectively improving the service life and application range of the silicon chip semiconductor substrate of the present application.

[0051] According to the comparison of the experimental data of Application Examples 5-9 in Table 1, it can be seen that when the inventors add specific buffers and acid-base regulators to the electroplating solution, it can be clearly seen that the electroplating layer of the silicon chip semiconductor substrate of the present application is enhanced in wear resistance, corrosion resistance and conductivity to a greater extent, thereby enabling the silicon chip semiconductor substrate prepared by the present application to be further improved in terms of service life and application scope, and has great economic value.

[0052] According to the comparison of the test data of Application Examples 5 and 10 in Table 1, it can be seen that when the inventors choose to add pre-treated modified sodium dodecylphenol polyoxyethylene ether sulfate, the electroplating layer of the silicon chip semiconductor substrate is greatly enhanced in wear resistance, corrosion resistance and conductivity, indicating that the surface properties of the modified sodium dodecylphenol polyoxyethylene ether sulfate molecular chain are effectively improved, so that the sodium dodecylphenol polyoxyethylene ether sulfate can better produce a synergistic effect with polyoxyethylene ether and polyvinyl alcohol.

[0053] According to the comparison of the experimental data of application examples 5, 10-12 in Table 1, it can be seen that when the inventor adopts a specific molar concentration of aluminum sulfate to change the pretreatment method, the conductive performance of the electroplated layer of the silicon chip semiconductor substrate of the present application can be enhanced to a greater extent, while the wear resistance and corrosion resistance of the electroplated layer of the silicon chip semiconductor substrate can be better improved, so that the silicon chip semiconductor substrate of the present application can adapt to the use under more working conditions, so as to achieve the effect of improving the service life and application range of the existing nickel-free electroplated silicon chip semiconductor substrate, thereby effectively improving the environmental protection and use safety of the electroplating production of the existing nickel-free electroplated silicon chip semiconductor substrate.

[0054] This specific embodiment is merely an explanation of the present application and is not a limitation of the present application. After reading this specification, those skilled in the art may make modifications to the present embodiment without any creative contribution as needed, but such modifications are protected by the patent law as long as they are within the scope of the claims of the present application.

Claims

1. A semiconductor plating solution, characterized in that: The invention is made of the following raw material components in parts by weight: Copper sulfate: 14 to 22 parts; Silver nitrate: 11 to 14 parts; Nonionic surfactant: 3 to 6 parts; Sodium dodecylphenol polyoxyethylene ether sulfate: 1.5 to 3.5 parts; Buffer: 7 to 12 parts; Acid-base regulator: 12 to 17 parts; The nonionic surfactant is composed of polyoxyethylene ether and polyvinyl alcohol, and the weight ratio of the polyoxyethylene ether to the polyvinyl alcohol is (2-5):

1.

2. A semiconductor plating solution according to claim 1, characterized in that: The average molecular weight of the polyoxyethylene ether is 400 g / mol.

3. A semiconductor plating solution according to claim 1, characterized in that: The viscosity of the polyvinyl alcohol is 15.0-20.0 mPa·s.

4. A semiconductor plating solution according to any one of claims 2-3, characterized in that: The concentration of the sodium dodecylphenol polyoxyethylene ether sulfate is 6%.

5. A semiconductor plating solution according to claim 4, characterized in that: The buffer is one or both of disodium hydrogen phosphate and sodium bicarbonate.

6. A semiconductor plating solution according to claim 4, characterized in that: The acid-base regulator is one or both of basic copper oxide and sodium hydroxide.

7. A semiconductor plating solution according to claim 4, characterized in that: The sodium dodecylphenol polyoxyethylene ether sulfate is pretreated and modified, and the pretreatment and modification steps include: adding aluminum sulfate and the sodium dodecylphenol polyoxyethylene ether sulfate to be pretreated and modified into a solvent to form a mixed solution, heating the solution to react, and obtaining a pretreated sodium dodecylphenol polyoxyethylene ether sulfate mixed solution after the reaction is completed.

8. A semiconductor plating solution according to claim 7, characterized in that: The molar concentration of the aluminum sulfate in the solvent is 0.45-0.6 mol / L.

9. A method for preparing a semiconductor electroplating solution according to any one of claims 1 to 8, characterized in that: The following steps are involved: Add copper sulfate, silver nitrate and acid-base regulator into the solvent according to weight ratio, and stir to form solution A; Add polyoxyethylene ether, polyvinyl alcohol, sodium dodecylphenol polyoxyethylene ether sulfate and buffer into the solvent according to weight ratio, and heat and stir to form solution B; Solution A and solution B are stirred and mixed, and then filtered and allowed to stand to prepare an electroplating solution.