Three-frequency device based on multilayer printing technology

Abstract

The invention discloses a three-frequency device based on a multi-layer printing technology, which comprises a ceramic dielectric body, a multi-layer circuit positioned in the ceramic dielectric body and an outer electrode positioned on the outer side wall of the ceramic dielectric body, the outer electrode comprises a common end, a low-frequency output end, an intermediate-frequency output end, a high-frequency output end, a first grounding end, a second grounding end, a third grounding end and a fourth grounding end; the multi-layer circuit comprises a low-frequency channel filter, an intermediate-frequency channel filter and a high-frequency channel filter which are formed by circuit elements; by integrating six equivalent inductors and nine equivalent capacitors in different frequency channels, the transmission and isolation characteristics of three filter channels in the triple-frequency device are realized. Compared with a traditional triple-frequency device, the technical scheme of the embodiment of the invention can realize mutual suppression between channels up to 20dB under the condition that the maximum insertion loss is 0.6 dB, 0.7 dB and 0.8 dB respectively, and has the characteristics of small size, low insertion loss, high isolation and interference resistance.

Description

Technical Field

[0001] The invention belongs to the field of triple-frequency devices, and in particular relates to a triple-frequency device based on a multi-layer printing technology. Background Art

[0002] Traditional three-band devices are mostly designed based on LC low-pass filters and band-pass or high-pass filter circuits. The low-pass filter channel allows relatively low-frequency signals to pass through and suppresses relatively high-frequency signals, while the band-pass or high-pass filter channel allows relatively high-frequency signals to pass through and suppresses relatively low-frequency signals. Since three filter channels need to be integrated into a single device and high isolation needs to be achieved between channels, traditional three-band devices are often large in size.

[0003] In recent years, the emergence of new materials and process technologies such as micro-electromechanical system technology, high-temperature superconducting technology, low-temperature co-fired ceramic technology, photonic bandgap structure, and microwave monolithic integrated circuits has promoted the continuous improvement of RF passive components such as frequency dividers and filters from performance to volume. Some components can already be the size of conventional surface-mount resistors, capacitors, and inductors. However, integrating multiple inductors and capacitors in such a compact space to achieve the function of a three-channel filter can easily cause mutual coupling between lumped components and generate unnecessary parasitic parameters, thereby reducing the Q value of the filter circuit, increasing insertion loss, and reducing the isolation between the low-frequency channel, the intermediate frequency channel, and the high-frequency channel. Therefore, a tri-band device with a small size, low insertion loss, high isolation, and a simple process structure suitable for mass production and a design method thereof are needed to meet the requirements of the increasingly developed highly integrated wireless communication terminals for low cost, small size, and high performance of RF components such as tri-band devices. Summary of the invention

[0004] In view of the above-mentioned deficiencies in the prior art, the present invention provides a three-band device based on multi-layer printing technology, which solves the problem that the traditional three-band device cannot meet the requirements of small size, low insertion loss, high isolation, simple process structure and mass production.

[0005] In order to achieve the above-mentioned invention object, the technical solution adopted by the present invention is: a three-frequency device based on multi-layer printing technology, including a ceramic dielectric body, a multi-layer circuit located in the ceramic dielectric body and an external electrode located on the outer wall of the ceramic dielectric body, the external electrode including a common terminal, a low-frequency output terminal, an intermediate-frequency output terminal, a high-frequency output terminal, a first ground terminal, a second ground terminal, a third ground terminal and a fourth ground terminal, the multi-layer circuit including a low-frequency channel filter, an intermediate-frequency channel filter and a high-frequency channel filter composed of circuit elements;

[0006] The low frequency channel filter is respectively connected to the common terminal and the low frequency output terminal, the intermediate frequency channel filter is connected to the intermediate frequency output terminal, and the high frequency channel filter is respectively connected to the common terminal, the high frequency output terminal, the first ground terminal, the second ground terminal, the third ground terminal and the fourth ground terminal.

[0007] Further: the low-frequency channel filter includes a second electrode plate P2 and a third electrode plate P3 located on the first circuit layer, a fifth electrode plate P5 and a sixth electrode plate P6 located on the second circuit layer, an eighth electrode plate P8 located on the third circuit layer, a twelfth electrode plate P12 located on the fifth circuit layer, a fifteenth electrode plate P15 located on the sixth circuit layer, a nineteenth electrode plate P19 located on the seventh circuit layer, a twenty-ninth electrode plate P29 located on the eleventh circuit layer, and a thirtieth electrode plate P30 located on the twelfth circuit layer;

[0008] The intermediate frequency channel filter includes a first electrode plate P1 and a second electrode plate P2 located on a first circuit layer, a fourth electrode plate P4 and a fifth electrode plate P5 located on the second circuit layer, a seventh electrode plate P7 and an eighth electrode plate P8 located on the third circuit layer, a ninth electrode plate P9 located on the fourth circuit layer, an eleventh electrode plate P11 located on the fifth circuit layer, a thirteenth electrode plate P13 and a sixteenth electrode plate P16 located on the sixth circuit layer, a seventeenth electrode plate P17 and a twentieth electrode plate P20 located on the seventh circuit layer, and a twenty-second electrode plate P22 located on the eighth circuit layer;

[0009] The high-frequency channel filter includes a tenth electrode plate P10 located on the fourth circuit layer, a fourteenth electrode plate P14 located on the sixth circuit layer, an eighteenth electrode plate P18 and a twenty-first electrode plate P21 located on the seventh circuit layer, a twenty-third electrode plate P23 and a twenty-fourth electrode plate P24 located on the eighth circuit layer, a twenty-fifth electrode plate P25 located on the ninth circuit layer, a twenty-sixth electrode plate P26 and a twenty-seventh electrode plate P27 located on the tenth circuit layer, a twenty-eighth electrode plate P28 located on the eleventh circuit layer, and a thirtieth electrode plate P30 located on the twelfth circuit layer.

[0010] Further: the low-frequency channel filter includes a first equivalent inductor L1, a second equivalent inductor L2, a first equivalent capacitor C1 and a second equivalent capacitor C2;

[0011] Among them, the second electrode plate P2, the fifth electrode plate P5 and the eighth electrode plate P8 are connected end to end via the second via H2 and the fifth via H5 respectively to form a first equivalent inductor L1, the third electrode plate P3 and the sixth electrode plate P6 are connected end to end via the third via H3 to form a second equivalent inductor L2, the fifteenth electrode plate P15 and the nineteenth electrode plate P19 form a first equivalent capacitor C1 through interlayer coupling, and the twenty-ninth electrode plate P29 and the thirtieth electrode plate P30 form a second equivalent capacitor C2 through interlayer coupling.

[0012] Further: the intermediate frequency channel filter includes a first equivalent inductor L1, a third equivalent inductor L3, a third equivalent capacitor C3 and a fourth equivalent capacitor C4;

[0013] Among them, the first electrode plate P1, the fourth electrode plate P4 and the seventh electrode plate P7 are connected end to end via the first via H1 and the fourth via H4 to form a third equivalent inductor L3, the ninth electrode plate P9, the eleventh electrode plate P11, the sixteenth electrode plate P16 and the twentieth electrode plate P20 form a third equivalent capacitor C3 through interlayer coupling, and the thirteenth electrode plate P13, the seventeenth electrode plate P17 and the twenty-second electrode plate P22 form a fourth equivalent capacitor C4 through interlayer coupling.

[0014] Further: the high-frequency channel filter comprises a fourth equivalent inductor L4, a fifth equivalent inductor L5, a sixth equivalent inductor L6, a fifth equivalent capacitor C5, a sixth equivalent capacitor C6, a seventh equivalent capacitor C7, an eighth equivalent capacitor C8 and a ninth equivalent capacitor C9;

[0015] Among them, the twenty-fifth electrode plate microstrip line P25 is equivalent to the fourth equivalent inductor L4, the twenty-seventh electrode plate microstrip line P27 is equivalent to the fifth equivalent inductor L5, the twenty-sixth electrode plate microstrip line P26 is equivalent to the sixth equivalent inductor L6, the tenth electrode plate P10 and the eighteenth electrode plate P18 constitute the fifth equivalent capacitor C5 through interlayer coupling, the twenty-first electrode plate P21 and the twenty-fourth electrode plate P24 constitute the sixth equivalent capacitor C6 through interlayer coupling, the eighteenth electrode plate P18 and the twenty-third electrode plate P23 constitute the seventh equivalent capacitor C7 through interlayer coupling, the fourteenth electrode plate P14 and the eighteenth electrode plate P18 constitute the eighth equivalent capacitor C8 through interlayer coupling, and the twenty-eighth electrode plate P28 and the thirtieth electrode plate P30 constitute the ninth equivalent capacitor C9 through interlayer coupling.

[0016] Further: In the low frequency channel filter:

[0017] One end of the first equivalent inductor L1 is connected to the common end, the other end of the first equivalent inductor L1 is connected to one end of the first equivalent capacitor C1 via the eighth via H8, the twelfth electrode plate P12 and the eleventh via H11, the other end of the first equivalent capacitor C1 is connected to the low-frequency output end, one end of the second equivalent inductor L2 is connected to the common connection between the first equivalent inductor L1 and the first equivalent capacitor C1 via the sixth via H6, the other end of the second equivalent inductor L2 is connected to the low-frequency output end, one end of the second equivalent capacitor C2 is connected to the ground port through the thirtieth electrode plate P30, and the other end of the second equivalent capacitor C2 is connected to the low-frequency output end.

[0018] Further: In the intermediate frequency channel filter:

[0019] One end of the third equivalent capacitor C3 is connected to the common connection of the first equivalent inductor L1 and the first equivalent capacitor C1, the other end of the third equivalent capacitor C3 is connected to the intermediate frequency output end, one end of the third equivalent inductor L3 is connected to the intermediate frequency output end, the other end of the third equivalent inductor L3 is connected to one end of the fourth equivalent capacitor C4, and the other end of the fourth equivalent capacitor C4 is connected to the ground port.

[0020] Further: In the high frequency channel filter:

[0021] One end of the sixth equivalent capacitor C6 is connected to the common end, the other end of the sixth equivalent capacitor C6 is connected to one end of the fourth equivalent inductor L4 via the thirteenth via hole H13, the other end of the fourth equivalent inductor L4 is connected to the ground port, one end of the seventh equivalent capacitor C7 is connected to the common connection of the sixth equivalent capacitor C6 and the fourth equivalent inductor L4, the other end of the seventh equivalent capacitor C7 is connected to one end of the fifth equivalent capacitor C5, the other end of the fifth equivalent capacitor C5 is connected to one end of the sixth equivalent capacitor C6 via the tenth via hole H10, one end of the fifth equivalent inductor L5 is connected to the common connection of the fifth equivalent capacitor C5 and the seventh equivalent capacitor C7 via the twelfth via hole H12, the other end of the fifth equivalent inductor L5 is connected to the common connection of the fifth equivalent capacitor C5 and the seventh equivalent capacitor C7 via the fourteenth via hole H14. The via H14 is connected to one end of the ninth equivalent capacitor C9, the other end of the ninth equivalent capacitor C9 is connected to the ground port through the thirtieth electrode plate P30, one end of the sixth equivalent inductor L6 is connected to the common connection of the fifth equivalent inductor L5 and the ninth equivalent capacitor C9, the other end of the sixth equivalent inductor L6 is connected to the high-frequency output end, one end of the eighth equivalent capacitor C8 is connected to the common connection of the fifth equivalent capacitor C5, the seventh equivalent capacitor C7 and the fifth equivalent inductor L5, the other end of the eighth equivalent capacitor C8 is connected to the high-frequency output end, the thirtieth electrode plate P30 is a large-area grounding layer, and the thirtieth electrode plate P30 is respectively connected to the first grounding end, the second grounding end, the third grounding end and the fourth grounding end via four small microstrip lines.

[0022] Further: in the multi-layer circuit, the thickness from the first circuit layer to the top layer of the triple-band device is 60um;

[0023] The thickness from the second circuit layer to the first circuit layer is 60um;

[0024] The thickness from the third circuit layer to the second circuit layer is 60um;

[0025] The thickness from the fourth circuit layer to the third circuit layer is 150um;

[0026] The thickness from the fifth circuit layer to the fourth circuit layer is 17um;

[0027] The thickness from the sixth circuit layer to the fifth circuit layer is 17um;

[0028] The thickness from the seventh circuit layer to the sixth circuit layer is 17um;

[0029] The thickness from the eighth circuit layer to the seventh circuit layer is 17um;

[0030] The thickness from the ninth circuit layer to the eighth circuit layer is 150um;

[0031] The thickness of the tenth circuit layer to the ninth circuit layer is 60um;

[0032] The thickness of the eleventh circuit layer to the tenth circuit layer is 60um;

[0033] The thickness of the twelfth circuit layer to the eleventh circuit layer is 17um;

[0034] The thickness from the bottom layer to the twelfth circuit layer of the triple-band device is 60um.

[0035] Furthermore: the triple-frequency device is manufactured using a multi-layer printed circuit board process, a low-temperature co-fired ceramic technology, an IPD process, or a CMOS semiconductor process, and / or the multi-layer circuit uses copper or palladium silver as the embedded metal material.

[0036] The beneficial effects of the present invention are as follows: the present invention provides a three-frequency device based on multi-layer printing technology, which realizes the transmission and isolation characteristics of the three filter channels in the three-frequency device by integrating six equivalent inductors and nine equivalent capacitors in different frequency channels. Compared with the traditional three-frequency device, the technical solution of the embodiment of the present invention has the following technical advantages:

[0037] (1) Small size. The multi-layer interconnection technology based on low-temperature co-fired ceramics makes the triple-band device compact and repeatable. By using vertical coupling, a larger capacitance can be achieved in a smaller volume.

[0038] (2) Low insertion loss. By using a reasonable topological structure to block the parasitic coupling of circuit elements on different layers as much as possible, the quality factor of the filter circuit can be effectively improved, and the maximum insertion loss of the three channels can be achieved in a small volume with only 0.6dB, 0.7dB and 0.8dB respectively.

[0039] (3) High isolation. The three filters in the triple-band filter can achieve up to 20dB of mutual suppression isolation in their operating frequency bands, which can effectively reduce mutual interference between channels.

[0040] (4) Suitable for mass production. The design of the entire tri-band device maximizes the tolerance of the processing technology while ensuring that its electrical performance is not affected. For example, the two vertical coupling plates of the equivalent capacitor are in the form of "big package small", and sufficient distance is reserved from the internal graphics of the tri-band device to the external cutting frame. Monte Carlo simulation analysis is used for the sensitive layer circuit elements to ensure that the impact of their process deviation on the electrical performance of the entire tri-band device is within an acceptable range. This improves the process stability and consistency of the tri-band device in the mass production stage. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] Figure 1 FIG. 4 is a schematic diagram of the appearance of a triple-band device according to an embodiment of the present invention.

[0042] Figure 2 Schematic diagram of the internal structure of a triple-band device according to an embodiment of the present invention.

[0043] Figure 3 4 is an equivalent schematic diagram of a triple-frequency device according to an embodiment of the present invention.

[0044] Figure 4 Schematic diagram of a first circuit layer of a triple-band device according to an embodiment of the present invention.

[0045] Figure 5 Schematic diagram of the second circuit layer of the triple-band device according to an embodiment of the present invention.

[0046] Figure 6 Schematic diagram of the third circuit layer of the triple-band device according to an embodiment of the present invention.

[0047] Figure 7 Schematic diagram of the fourth circuit layer of the triple-band device according to an embodiment of the present invention.

[0048] Figure 8 It is a schematic diagram of the fifth circuit layer of the triple-band device according to an embodiment of the present invention.

[0049] Fig. 9 It is a sixth circuit layer schematic diagram of the triple-band device according to an embodiment of the present invention.

[0050] Fig.10 It is a seventh circuit layer schematic diagram of the triple-band device according to an embodiment of the present invention.

[0051] Fig.11 FIG. 8 is a schematic diagram of an eighth circuit layer of a triple-band device according to an embodiment of the present invention.

[0052] Fig.12 It is a ninth circuit layer schematic diagram of the triple-band device according to an embodiment of the present invention.

[0053] Fig.13 Schematic diagram of the tenth circuit layer of the triple-band device according to an embodiment of the present invention.

[0054] Fig.14It is a schematic diagram of the eleventh circuit layer of the triple-band device according to an embodiment of the present invention.

[0055] Fig.15 It is a schematic diagram of the twelfth circuit layer of the triple-band device according to an embodiment of the present invention.

[0056] Fig.16 FIG. 4 is a transmission characteristic response curve diagram of the triple-band device according to an embodiment of the present invention. DETAILED DESCRIPTION

[0057] The specific implementation modes of the present invention are described below so that those skilled in the art can understand the present invention. However, it should be clear that the present invention is not limited to the scope of the specific implementation modes. For those of ordinary skill in the art, as long as various changes are within the spirit and scope of the present invention as defined and determined by the attached claims, these changes are obvious, and all inventions and creations utilizing the concept of the present invention are protected.

[0058] like Figure 1 As shown, in one embodiment of the present invention, a three-frequency device based on multi-layer printing technology includes a ceramic dielectric body, a multi-layer circuit located in the ceramic dielectric body, and an external electrode located on the outer wall of the ceramic dielectric body, the external electrode includes a common terminal, a low-frequency output terminal, an intermediate-frequency output terminal, a high-frequency output terminal, a first ground terminal, a second ground terminal, a third ground terminal, and a fourth ground terminal, and the multi-layer circuit includes a low-frequency channel filter, an intermediate-frequency channel filter, and a high-frequency channel filter composed of circuit elements;

[0059] The low frequency channel filter is respectively connected to the common terminal and the low frequency output terminal, the intermediate frequency channel filter is connected to the intermediate frequency output terminal, and the high frequency channel filter is respectively connected to the common terminal, the high frequency output terminal, the first ground terminal, the second ground terminal, the third ground terminal and the fourth ground terminal.

[0060] In this embodiment, the present invention provides a three-band device based on multi-layer printing technology with a multi-layer circuit structure. By using corresponding LC circuit topologies in different channel areas, the three-channel frequency division function of the three-band device can be realized in a very small package volume. The multi-layer three-band device provided by the present invention can achieve up to 20dB of mutual suppression between channels when the maximum insertion losses are 0.6dB, 0.7dB and 0.8dB respectively. It has the characteristics of small size, low insertion loss, high isolation and anti-interference.

[0061] In this embodiment, if Figure 1As shown in the figure, the multi-layer circuit of the three-frequency device is built into a 2.0mm×1.25mm×0.8mm ceramic dielectric body and sintered at a temperature of 860℃±10℃. The external electrodes of the three-frequency device include a common terminal, a low-frequency output terminal, an intermediate-frequency output terminal, a high-frequency output terminal, a first ground terminal, a second ground terminal, a third ground terminal and a fourth ground terminal. The identification symbol on the top of the three-frequency device is used to identify the relative position of each port.

[0062] like Figure 2 As shown, the triple frequency device is internally configured as a multi-layer circuit, including a low frequency channel filter, an intermediate frequency channel filter and a high frequency channel filter.

[0063] like Figure 3 As shown, in this embodiment, the low-frequency channel filter includes a second electrode plate P2 and a third electrode plate P3 located on the first circuit layer, a fifth electrode plate P5 and a sixth electrode plate P6 located on the second circuit layer, an eighth electrode plate P8 located on the third circuit layer, a twelfth electrode plate P12 located on the fifth circuit layer, a fifteenth electrode plate P15 located on the sixth circuit layer, a nineteenth electrode plate P19 located on the seventh circuit layer, a twenty-ninth electrode plate P29 located on the eleventh circuit layer, and a thirtieth electrode plate P30 located on the twelfth circuit layer;

[0064] The intermediate frequency channel filter includes a first electrode plate P1 and a second electrode plate P2 located on a first circuit layer, a fourth electrode plate P4 and a fifth electrode plate P5 located on the second circuit layer, a seventh electrode plate P7 and an eighth electrode plate P8 located on the third circuit layer, a ninth electrode plate P9 located on the fourth circuit layer, an eleventh electrode plate P11 located on the fifth circuit layer, a thirteenth electrode plate P13 and a sixteenth electrode plate P16 located on the sixth circuit layer, a seventeenth electrode plate P17 and a twentieth electrode plate P20 located on the seventh circuit layer, and a twenty-second electrode plate P22 located on the eighth circuit layer;

[0065] The high-frequency channel filter includes a tenth electrode plate P10 located on the fourth circuit layer, a fourteenth electrode plate P14 located on the sixth circuit layer, an eighteenth electrode plate P18 and a twenty-first electrode plate P21 located on the seventh circuit layer, a twenty-third electrode plate P23 and a twenty-fourth electrode plate P24 located on the eighth circuit layer, a twenty-fifth electrode plate P25 located on the ninth circuit layer, a twenty-sixth electrode plate P26 and a twenty-seventh electrode plate P27 located on the tenth circuit layer, a twenty-eighth electrode plate P28 located on the eleventh circuit layer, and a thirtieth electrode plate P30 located on the twelfth circuit layer.

[0066] In this embodiment, the circuit principles of the first circuit layer to the twelfth circuit layer of the triple-frequency device are as follows: Figures 4 to 15 As shown, the low-frequency channel filter includes a first equivalent inductor L1, a second equivalent inductor L2, a first equivalent capacitor C1 and a second equivalent capacitor C2;

[0067] Among them, the second electrode plate P2, the fifth electrode plate P5 and the eighth electrode plate P8 are connected end to end via the second via H2 and the fifth via H5 respectively to form a first equivalent inductor L1, the third electrode plate P3 and the sixth electrode plate P6 are connected end to end via the third via H3 to form a second equivalent inductor L2, the fifteenth electrode plate P15 and the nineteenth electrode plate P19 form a first equivalent capacitor C1 through interlayer coupling, and the twenty-ninth electrode plate P29 and the thirtieth electrode plate P30 form a second equivalent capacitor C2 through interlayer coupling.

[0068] The intermediate frequency channel filter includes a first equivalent inductor L1, a third equivalent inductor L3, a third equivalent capacitor C3 and a fourth equivalent capacitor C4;

[0069] Among them, the first electrode plate P1, the fourth electrode plate P4 and the seventh electrode plate P7 are connected end to end via the first via H1 and the fourth via H4 to form a third equivalent inductor L3, the ninth electrode plate P9, the eleventh electrode plate P11, the sixteenth electrode plate P16 and the twentieth electrode plate P20 form a third equivalent capacitor C3 through interlayer coupling, and the thirteenth electrode plate P13, the seventeenth electrode plate P17 and the twenty-second electrode plate P22 form a fourth equivalent capacitor C4 through interlayer coupling.

[0070] The high-frequency channel filter comprises a fourth equivalent inductor L4, a fifth equivalent inductor L5, a sixth equivalent inductor L6, a fifth equivalent capacitor C5, a sixth equivalent capacitor C6, a seventh equivalent capacitor C7, an eighth equivalent capacitor C8 and a ninth equivalent capacitor C9;

[0071] Among them, the twenty-fifth electrode plate microstrip line P25 is equivalent to the fourth equivalent inductor L4, the twenty-seventh electrode plate microstrip line P27 is equivalent to the fifth equivalent inductor L5, the twenty-sixth electrode plate microstrip line P26 is equivalent to the sixth equivalent inductor L6, the tenth electrode plate P10 and the eighteenth electrode plate P18 constitute the fifth equivalent capacitor C5 through interlayer coupling, the twenty-first electrode plate P21 and the twenty-fourth electrode plate P24 constitute the sixth equivalent capacitor C6 through interlayer coupling, the eighteenth electrode plate P18 and the twenty-third electrode plate P23 constitute the seventh equivalent capacitor C7 through interlayer coupling, the fourteenth electrode plate P14 and the eighteenth electrode plate P18 constitute the eighth equivalent capacitor C8 through interlayer coupling, and the twenty-eighth electrode plate P28 and the thirtieth electrode plate P30 constitute the ninth equivalent capacitor C9 through interlayer coupling.

[0072] In the low frequency channel filter:

[0073] One end of the first equivalent inductor L1 is connected to the common end, the other end of the first equivalent inductor L1 is connected to one end of the first equivalent capacitor C1 via the eighth via H8, the twelfth electrode plate P12 and the eleventh via H11, the other end of the first equivalent capacitor C1 is connected to the low-frequency output end, one end of the second equivalent inductor L2 is connected to the common connection between the first equivalent inductor L1 and the first equivalent capacitor C1 via the sixth via H6, the other end of the second equivalent inductor L2 is connected to the low-frequency output end, one end of the second equivalent capacitor C2 is connected to the ground port through the thirtieth electrode plate P30, and the other end of the second equivalent capacitor C2 is connected to the low-frequency output end.

[0074] In the intermediate frequency channel filter:

[0075] One end of the third equivalent capacitor C3 is connected to the common connection of the first equivalent inductor L1 and the first equivalent capacitor C1, the other end of the third equivalent capacitor C3 is connected to the intermediate frequency output end, one end of the third equivalent inductor L3 is connected to the intermediate frequency output end, the other end of the third equivalent inductor L3 is connected to one end of the fourth equivalent capacitor C4, and the other end of the fourth equivalent capacitor C4 is connected to the ground port.

[0076] In the high frequency channel filter:

[0077] One end of the sixth equivalent capacitor C6 is connected to the common end, the other end of the sixth equivalent capacitor C6 is connected to one end of the fourth equivalent inductor L4 via the thirteenth via hole H13, the other end of the fourth equivalent inductor L4 is connected to the ground port, one end of the seventh equivalent capacitor C7 is connected to the common connection of the sixth equivalent capacitor C6 and the fourth equivalent inductor L4, the other end of the seventh equivalent capacitor C7 is connected to one end of the fifth equivalent capacitor C5, the other end of the fifth equivalent capacitor C5 is connected to one end of the sixth equivalent capacitor C6 via the tenth via hole H10, one end of the fifth equivalent inductor L5 is connected to the common connection of the fifth equivalent capacitor C5 and the seventh equivalent capacitor C7 via the twelfth via hole H12, and the other end of the fifth equivalent inductor L5 is connected to the common connection of the fifth equivalent capacitor C5 and the seventh equivalent capacitor C7 via the fourteenth via hole H14. It is connected to one end of the ninth equivalent capacitor C9, the other end of the ninth equivalent capacitor C9 is connected to the ground port through the thirtieth electrode plate P30, one end of the sixth equivalent inductor L6 is connected to the common connection of the fifth equivalent inductor L5 and the ninth equivalent capacitor C9, the other end of the sixth equivalent inductor L6 is connected to the high-frequency output end, one end of the eighth equivalent capacitor C8 is connected to the common connection of the fifth equivalent capacitor C5, the seventh equivalent capacitor C7 and the fifth equivalent inductor L5, the other end of the eighth equivalent capacitor C8 is connected to the high-frequency output end, the thirtieth electrode plate P30 is a large-area grounding layer, and the thirtieth electrode plate P30 is respectively connected to the first grounding end, the second grounding end, the third grounding end and the fourth grounding end via four small microstrip lines to ensure a good grounding effect.

[0078] In this embodiment, the dielectric constant of the ceramic material used in the three-band circuit can vary within a wide range, and the physical size of the equivalent component is inversely proportional to the square root of the dielectric constant of the material, that is, the larger the dielectric constant, the smaller the required component size, but at the same time, the greater the parasitic parameter impact. In order to meet the requirements of low insertion loss, high isolation and small volume at the same time, the embodiment of the present invention selects a dielectric material with a dielectric constant of 7.8, and its dielectric loss tangent is 0.001.

[0079] In the multi-layer circuit, the thickness from the first circuit layer to the top layer of the triple-band device is 60 um;

[0080] The thickness from the second circuit layer to the first circuit layer is 60um;

[0081] The thickness from the third circuit layer to the second circuit layer is 60um;

[0082] The thickness from the fourth circuit layer to the third circuit layer is 150um;

[0083] The thickness from the fifth circuit layer to the fourth circuit layer is 17um;

[0084] The thickness from the sixth circuit layer to the fifth circuit layer is 17um;

[0085] The thickness from the seventh circuit layer to the sixth circuit layer is 17um;

[0086] The thickness from the eighth circuit layer to the seventh circuit layer is 17um;

[0087] The thickness from the ninth circuit layer to the eighth circuit layer is 150um;

[0088] The thickness of the tenth circuit layer to the ninth circuit layer is 60um;

[0089] The thickness of the eleventh circuit layer to the tenth circuit layer is 60um;

[0090] The thickness of the twelfth circuit layer to the eleventh circuit layer is 17um;

[0091] The thickness from the bottom layer to the twelfth circuit layer of the triple-band device is 60um.

[0092] The triple frequency device is manufactured by using a multi-layer printed circuit board process, a low temperature co-fired ceramic technology, an IPD process, or a CMOS semiconductor process, and / or the multi-layer circuit uses copper or palladium silver as the embedded metal material.

[0093] like Fig.16As shown, in this embodiment, the insertion loss of the low-frequency channel filter in the working frequency band of 1570-1610MHz is only 0.58dB, and at the same time, it can achieve an out-of-band suppression of more than 20dB in the intermediate frequency channel working frequency band of 2400-2500MHz and the high frequency channel working frequency band of 5150-5950MHz. The insertion loss of the intermediate frequency channel filter in the working frequency band of 2400-2500MHz is only 0.64dB, and at the same time, it can achieve an out-of-band suppression of more than 25dB in the high frequency channel working frequency band of 5150-5950MHz. The insertion loss of the high-frequency channel filter in the working frequency band of 5150-5950MHz is only 0.77dB, and at the same time, it can achieve an out-of-band suppression of more than 25dB in the low frequency channel working frequency band of 1570-1610MHz and the intermediate frequency channel working frequency band of 2400-2500MHz. The above indicators reflect the good transmission characteristics of the three-band device and the high mutual isolation between channels.

[0094] In summary, the present invention provides a three-band device based on multi-layer printing technology. It has excellent performances such as high Q value, small size, low insertion loss, and high isolation. At the same time, under the premise of ensuring that its electrical performance is not affected, the tolerance of the processing technology is maximized, high process stability and consistency are achieved, and it is easy to integrate with other circuit modules, and has broad application prospects in the field of new generation wireless communications.

[0095] The beneficial effects of the present invention are as follows: the present invention provides a three-frequency device based on multi-layer printing technology, which realizes the transmission and isolation characteristics of the three filter channels in the three-frequency device by integrating six equivalent inductors and nine equivalent capacitors in different frequency channels. Compared with the traditional three-frequency device, the technical solution of the embodiment of the present invention has the following technical advantages:

[0096] (5) Small size. The multi-layer interconnection technology based on low-temperature co-fired ceramics makes the triple-band device compact and repeatable. By using vertical coupling, a larger capacitance can be achieved in a smaller volume.

[0097] (6) Low insertion loss. By using a reasonable topological structure to block the parasitic coupling of circuit elements on different layers as much as possible, the quality factor of the filter circuit can be effectively improved, and the maximum insertion loss of the three channels can be only 0.6dB, 0.7dB and 0.8dB respectively in a small volume.

[0098] (7) High isolation. The three filters in the triple-band filter can achieve up to 20dB of mutual suppression isolation in their operating frequency bands, which can effectively reduce mutual interference between channels.

[0099] (8) Suitable for mass production. The design of the entire tri-band device maximizes the tolerance of the processing technology while ensuring that its electrical performance is not affected. For example, the two vertical coupling plates of the equivalent capacitor are in the form of "big package small", sufficient distance is reserved from the internal graphics of the tri-band device to the external cutting frame, and Monte Carlo simulation analysis is used for the sensitive layer circuit elements to ensure that the impact of its process deviation on the electrical performance of the entire tri-band device is within an acceptable range. This improves the process stability and consistency of the tri-band device in the mass production stage.

[0100] Those skilled in the art will further appreciate that the various illustrative logical blocks, modules, circuits, and algorithm steps described in connection with the disclosure herein may be implemented as electronic hardware, computer software, or a combination of both.

[0101] The flow chart and block diagram in the accompanying drawings show the possible architecture, function and operation of the system and method according to multiple embodiments of the present invention. In this regard, each square box in the flow chart or block diagram can represent a part of a module, program segment or code, and the part of the module, program segment or code contains one or more executable instructions for realizing the specified logical function. It should also be noted that in some alternative implementations, the functions marked in the square box can also occur in a sequence different from that marked in the accompanying drawings. For example, two continuous square boxes can actually be executed substantially in parallel, and they can sometimes be executed in the opposite order, depending on the functions involved. It should also be noted that each square box in the block diagram and / or flow chart, and the combination of the square boxes in the block diagram and / or flow chart can be implemented with a dedicated hardware-based system that performs the specified function or operation, or can be implemented with a combination of dedicated hardware and computer instructions.

[0102] In the description of the present invention, it is necessary to understand that the orientation or positional relationship indicated by the terms "center", "thickness", "upper", "lower", "horizontal", "top", "bottom", "inner", "outer", "radial", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention. In addition, the terms "first", "second", and "third" are used only for descriptive purposes, and cannot be understood as indicating or implying the relative importance or the number of implicitly specified technical features. Therefore, the features defined by "first", "second", and "third" may explicitly or implicitly include one or more of the features.

Claims

1. A three-frequency device based on multi-layer printing technology, characterized in that: It includes a ceramic dielectric body, a multi-layer circuit located in the ceramic dielectric body, and an external electrode located on the outer side wall of the ceramic dielectric body, wherein the external electrode includes a common terminal, a low-frequency output terminal, an intermediate-frequency output terminal, a high-frequency output terminal, a first ground terminal, a second ground terminal, a third ground terminal, and a fourth ground terminal, and the multi-layer circuit includes a low-frequency channel filter, an intermediate-frequency channel filter, and a high-frequency channel filter formed by circuit elements; The low frequency channel filter is respectively connected to the common terminal and the low frequency output terminal, the intermediate frequency channel filter is connected to the intermediate frequency output terminal, and the high frequency channel filter is respectively connected to the common terminal, the high frequency output terminal, the first ground terminal, the second ground terminal, the third ground terminal and the fourth ground terminal.

2. The triple frequency device based on multi-layer printing technology according to claim 1, characterized in that: The low-frequency channel filter includes a second electrode plate P2 and a third electrode plate P3 located on the first circuit layer, a fifth electrode plate P5 and a sixth electrode plate P6 located on the second circuit layer, an eighth electrode plate P8 located on the third circuit layer, a twelfth electrode plate P12 located on the fifth circuit layer, a fifteenth electrode plate P15 located on the sixth circuit layer, a nineteenth electrode plate P19 located on the seventh circuit layer, a twenty-ninth electrode plate P29 located on the eleventh circuit layer, and a thirtieth electrode plate P30 located on the twelfth circuit layer; The intermediate frequency channel filter includes a first electrode plate P1 and a second electrode plate P2 located on a first circuit layer, a fourth electrode plate P4 and a fifth electrode plate P5 located on the second circuit layer, a seventh electrode plate P7 and an eighth electrode plate P8 located on the third circuit layer, a ninth electrode plate P9 located on the fourth circuit layer, an eleventh electrode plate P11 located on the fifth circuit layer, a thirteenth electrode plate P13 and a sixteenth electrode plate P16 located on the sixth circuit layer, a seventeenth electrode plate P17 and a twentieth electrode plate P20 located on the seventh circuit layer, and a twenty-second electrode plate P22 located on the eighth circuit layer; The high-frequency channel filter includes a tenth electrode plate P10 located on the fourth circuit layer, a fourteenth electrode plate P14 located on the sixth circuit layer, an eighteenth electrode plate P18 and a twenty-first electrode plate P21 located on the seventh circuit layer, a twenty-third electrode plate P23 and a twenty-fourth electrode plate P24 located on the eighth circuit layer, a twenty-fifth electrode plate P25 located on the ninth circuit layer, a twenty-sixth electrode plate P26 and a twenty-seventh electrode plate P27 located on the tenth circuit layer, a twenty-eighth electrode plate P28 located on the eleventh circuit layer, and a thirtieth electrode plate P30 located on the twelfth circuit layer.

3. The triple-frequency device based on multi-layer printing technology according to claim 2, characterized in that: The low-frequency channel filter includes a first equivalent inductor L1, a second equivalent inductor L2, a first equivalent capacitor C1 and a second equivalent capacitor C2; Among them, the second electrode plate P2, the fifth electrode plate P5 and the eighth electrode plate P8 are connected end to end via the second via H2 and the fifth via H5 respectively to form a first equivalent inductor L1, the third electrode plate P3 and the sixth electrode plate P6 are connected end to end via the third via H3 to form a second equivalent inductor L2, the fifteenth electrode plate P15 and the nineteenth electrode plate P19 form a first equivalent capacitor C1 through interlayer coupling, and the twenty-ninth electrode plate P29 and the thirtieth electrode plate P30 form a second equivalent capacitor C2 through interlayer coupling.

4. The triple-frequency device based on multi-layer printing technology according to claim 3, characterized in that: The intermediate frequency channel filter includes a first equivalent inductor L1, a third equivalent inductor L3, a third equivalent capacitor C3 and a fourth equivalent capacitor C4; Among them, the first electrode plate P1, the fourth electrode plate P4 and the seventh electrode plate P7 are connected end to end via the first via H1 and the fourth via H4 to form a third equivalent inductor L3, the ninth electrode plate P9, the eleventh electrode plate P11, the sixteenth electrode plate P16 and the twentieth electrode plate P20 form a third equivalent capacitor C3 through interlayer coupling, and the thirteenth electrode plate P13, the seventeenth electrode plate P17 and the twenty-second electrode plate P22 form a fourth equivalent capacitor C4 through interlayer coupling.

5. The triple-frequency device based on multi-layer printing technology according to claim 2, characterized in that: The high-frequency channel filter comprises a fourth equivalent inductor L4, a fifth equivalent inductor L5, a sixth equivalent inductor L6, a fifth equivalent capacitor C5, a sixth equivalent capacitor C6, a seventh equivalent capacitor C7, an eighth equivalent capacitor C8 and a ninth equivalent capacitor C9; Among them, the twenty-fifth electrode plate microstrip line P25 is equivalent to the fourth equivalent inductor L4, the twenty-seventh electrode plate microstrip line P27 is equivalent to the fifth equivalent inductor L5, the twenty-sixth electrode plate microstrip line P26 is equivalent to the sixth equivalent inductor L6, the tenth electrode plate P10 and the eighteenth electrode plate P18 constitute the fifth equivalent capacitor C5 through interlayer coupling, the twenty-first electrode plate P21 and the twenty-fourth electrode plate P24 constitute the sixth equivalent capacitor C6 through interlayer coupling, the eighteenth electrode plate P18 and the twenty-third electrode plate P23 constitute the seventh equivalent capacitor C7 through interlayer coupling, the fourteenth electrode plate P14 and the eighteenth electrode plate P18 constitute the eighth equivalent capacitor C8 through interlayer coupling, and the twenty-eighth electrode plate P28 and the thirtieth electrode plate P30 constitute the ninth equivalent capacitor C9 through interlayer coupling.

6. The triple frequency device based on multi-layer printing technology according to claim 3, characterized in that: In the low frequency channel filter: One end of the first equivalent inductor L1 is connected to the common end, the other end of the first equivalent inductor L1 is connected to one end of the first equivalent capacitor C1 via the eighth via H8, the twelfth electrode plate P12 and the eleventh via H11, the other end of the first equivalent capacitor C1 is connected to the low-frequency output end, one end of the second equivalent inductor L2 is connected to the common connection between the first equivalent inductor L1 and the first equivalent capacitor C1 via the sixth via H6, the other end of the second equivalent inductor L2 is connected to the low-frequency output end, one end of the second equivalent capacitor C2 is connected to the ground port through the thirtieth electrode plate P30, and the other end of the second equivalent capacitor C2 is connected to the low-frequency output end.

7. The triple-frequency device based on multi-layer printing technology according to claim 4, characterized in that: In the intermediate frequency channel filter: One end of the third equivalent capacitor C3 is connected to the common connection of the first equivalent inductor L1 and the first equivalent capacitor C1, the other end of the third equivalent capacitor C3 is connected to the intermediate frequency output end, one end of the third equivalent inductor L3 is connected to the intermediate frequency output end, the other end of the third equivalent inductor L3 is connected to one end of the fourth equivalent capacitor C4, and the other end of the fourth equivalent capacitor C4 is connected to the ground port.

8. The triple frequency device based on multi-layer printing technology according to claim 5, characterized in that: In the high frequency channel filter: One end of the sixth equivalent capacitor C6 is connected to the common end, the other end of the sixth equivalent capacitor C6 is connected to one end of the fourth equivalent inductor L4 via the thirteenth via hole H13, the other end of the fourth equivalent inductor L4 is connected to the ground port, one end of the seventh equivalent capacitor C7 is connected to the common connection of the sixth equivalent capacitor C6 and the fourth equivalent inductor L4, the other end of the seventh equivalent capacitor C7 is connected to one end of the fifth equivalent capacitor C5, the other end of the fifth equivalent capacitor C5 is connected to one end of the sixth equivalent capacitor C6 via the tenth via hole H10, one end of the fifth equivalent inductor L5 is connected to the common connection of the fifth equivalent capacitor C5 and the seventh equivalent capacitor C7 via the twelfth via hole H12, the other end of the fifth equivalent inductor L5 is connected to the common connection of the fifth equivalent capacitor C5 and the seventh equivalent capacitor C7 via the fourteenth via hole H14. The via H14 is connected to one end of the ninth equivalent capacitor C9, the other end of the ninth equivalent capacitor C9 is connected to the ground port through the thirtieth electrode plate P30, one end of the sixth equivalent inductor L6 is connected to the common connection of the fifth equivalent inductor L5 and the ninth equivalent capacitor C9, the other end of the sixth equivalent inductor L6 is connected to the high-frequency output end, one end of the eighth equivalent capacitor C8 is connected to the common connection of the fifth equivalent capacitor C5, the seventh equivalent capacitor C7 and the fifth equivalent inductor L5, the other end of the eighth equivalent capacitor C8 is connected to the high-frequency output end, the thirtieth electrode plate P30 is a large-area grounding layer, and the thirtieth electrode plate P30 is respectively connected to the first grounding end, the second grounding end, the third grounding end and the fourth grounding end via four small microstrip lines.

9. The triple-frequency device based on multi-layer printing technology according to claim 5, characterized in that: In the multi-layer circuit, the thickness from the first circuit layer to the top layer of the triple-band device is 60 um; The thickness from the second circuit layer to the first circuit layer is 60um; The thickness from the third circuit layer to the second circuit layer is 60um; The thickness from the fourth circuit layer to the third circuit layer is 150um; The thickness from the fifth circuit layer to the fourth circuit layer is 17um; The thickness from the sixth circuit layer to the fifth circuit layer is 17um; The thickness from the seventh circuit layer to the sixth circuit layer is 17um; The thickness from the eighth circuit layer to the seventh circuit layer is 17um; The thickness from the ninth circuit layer to the eighth circuit layer is 150um; The thickness of the tenth circuit layer to the ninth circuit layer is 60um; The thickness of the eleventh circuit layer to the tenth circuit layer is 60um; The thickness of the twelfth circuit layer to the eleventh circuit layer is 17um; The thickness from the bottom layer to the twelfth circuit layer of the triple-band device is 60um.

10. The triple frequency device based on multi-layer printing technology according to claim 1, characterized in that: The triple frequency device is manufactured by using a multi-layer printed circuit board process, a low temperature co-fired ceramic technology, an IPD process, or a CMOS semiconductor process, and / or the multi-layer circuit uses copper or palladium silver as the embedded metal material.

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