Memory cell structure, manufacturing method thereof and memory cell array structure

Abstract

The embodiment of the invention relates to the technical field of semiconductors, and provides a storage unit structure, a manufacturing method thereof and a storage unit array structure, and the storage unit structure comprises a first transistor, a storage region and a second transistor which are in contact connection in sequence along a first direction; the first transistor comprises a first doped region, a second doped region and a third doped region which are in contact connection in sequence in the second direction, the second transistor comprises a fourth doped region, a fifth doped region and a sixth doped region which are in contact connection in sequence in the second direction, and the storage region is provided with a first side and a second side which are opposite in the first direction; the second doped region is in contact connection with the first side, and the fifth doped region is in contact connection with the second side; the first doped region, the third doped region, the fourth doped region and the sixth doped region are all doped with first doped ions, and the second doped region, the storage region and the fifth doped region are all doped with second doped ions. The embodiment of the invention at least can be beneficial to improving the electrical performance of the storage unit structure.

Description

Technical Field

[0001] The disclosed embodiments relate to the field of semiconductor technology, and in particular to a memory cell structure and a manufacturing method thereof, and a memory cell array structure. Background Art

[0002] Common dynamic random access memory (DRAM) is of 1T1C type, that is, a transistor source or drain is electrically connected to a capacitor to form a storage unit structure. This structure uses capacitors to store data, but because the capacitor consumes power when reading, and the capacitor itself also leaks electricity, it is necessary to constantly refresh the charge in the capacitor, which makes DRAM power consumption large and electrical performance unstable. At the same time, because the process of manufacturing capacitors occupies a large area, size miniaturization has also become a problem.

[0003] In order to overcome the problem brought by capacitors, a capacitor-free memory cell structure is used, but the electrical performance of the capacitor-free memory cell structure needs to be studied. Summary of the invention

[0004] The embodiments of the present disclosure provide a memory cell structure and a manufacturing method thereof, and a memory cell array structure, which are at least beneficial to improving the electrical performance of the memory cell structure.

[0005] According to some embodiments of the present disclosure, on the one hand, an embodiment of the present disclosure provides a storage unit structure, including: a first transistor, a storage area, and a second transistor that are sequentially contacted and connected along a first direction; wherein the first transistor includes a first doping area, a second doping area, and a third doping area that are sequentially contacted and connected along a second direction, and the second transistor includes a fourth doping area, a fifth doping area, and a sixth doping area that are sequentially contacted and connected along the second direction, and the storage area has a first side and a second side opposite to each other along the first direction, the second doping area is contacted and connected to the first side, and the fifth doping area is contacted and connected to the second side, and the first direction and the second direction intersect; the first doping area, the third doping area, the fourth doping area, and the sixth doping area are all doped with first doping ions, and the second doping area, the storage area, and the fifth doping area are all doped with second doping ions, and one of the first doping ions and the second doping ions is an N-type doping ion, and the other is a P-type doping ion.

[0006] In some embodiments, the doping concentration of the second doping ions in the second doping region is greater than the doping concentration in the storage region, and the doping concentration of the second doping ions in the second doping region is greater than the doping concentration in the fifth doping region.

[0007] In some embodiments, the doping concentration of the second doping ion in the second doping region is in the range of 1×10 18 atom / cm 3 ~1×10 19 atom / cm 3 The doping concentration of the second doping ion in the storage region is in the range of 1×10 16 atom / cm 3 ~8×10 17 atom / cm 3 , and / or, the doping concentration of the second doping ion in the fifth doping region is in the range of 1×10 16 atom / cm 3 ~8×10 17 atom / cm 3 .

[0008] In some embodiments, the first transistor comprises a triode.

[0009] In some embodiments, the second transistor includes a metal-oxide semiconductor field effect transistor; the metal-oxide semiconductor field effect transistor also includes: a gate dielectric layer located on a side of the fifth doping region along the first direction away from the storage region; and a gate located on a side of the gate dielectric layer along the first direction away from the fifth doping region.

[0010] In some embodiments, the memory cell structure further includes: a first electrical connection layer located on a side of the first doping region away from the second doping region along the second direction, and the first electrical connection layer is in contact and connected with the first doping region and the fourth doping region respectively.

[0011] In some embodiments, the memory cell structure further includes: a second electrical connection layer located on a side of the third doping region away from the second doping region along the second direction, and the second electrical connection layer is in contact and connected with the third doping region and the sixth doping region respectively.

[0012] In some embodiments, the memory cell structure further includes: a dielectric layer located between the first doping region and the fourth doping region, and between the third doping region and the sixth doping region, and a sidewall surrounding the memory region and extending along the first direction.

[0013] According to some embodiments of the present disclosure, on the other hand, the embodiments of the present disclosure further provide a method for manufacturing a storage unit structure, comprising: providing a substrate; performing doping and patterning treatment on different regions of the substrate to form a first transistor including a first doping region, a second doping region and a third doping region that are sequentially contacted and connected along a second direction, and forming a storage region located on a side of the second doping region away from the remaining substrate; forming a dielectric layer, the dielectric layer surrounds the sidewalls of the storage region extending along the first direction, and covers a side of the first doping region and the third doping region that are away from the remaining substrate; forming a second transistor, the second transistor is located on a side of the dielectric layer and the storage region that are away from the first transistor; wherein the second transistor comprises a fourth doping region, a fifth doping region and a sixth doping region that are sequentially contacted and connected along the second direction, the fifth doping region is in contact with the storage region, the first direction and the second direction intersect, the first doping region, the third doping region, the fourth doping region and the sixth doping region are all doped with first doping ions, the second doping region, the storage region and the fifth doping region are all doped with second doping ions, one of the first doping ions and the second doping ions is an N-type doping ion, and the other is a P-type doping ion.

[0014] In some embodiments, the steps of forming the first transistor and the storage area include: using two different doping processes to dope the second doping ions into the substrate to form an initial first doping area and an initial second doping area, and the remaining substrate is a substrate, the initial second doping area is located on a side of the substrate away from the initial first doping area, and the doping concentration of the second doping ions in the initial second doping area is less than the doping concentration in the initial first doping area; graphing the initial second doping area to form the storage area; using a third doping process to dope the first doping ions into the initial first doping area that is not blocked by the storage area to form the first doping area and the third doping area, and the remaining initial first doping area not doped with the first doping ions is the second doping area.

[0015] In some embodiments, the steps of forming the first transistor and the storage area include: using a fourth doping process to dope the second doping ions into the substrate to form an initial third doping area; forming a mask layer having an opening on a side of the initial third doping area away from the remaining substrate; using a fifth doping process to dope the first doping ions into the initial third doping area exposed by the opening to form the first doping area and the third doping area, and the remaining initial third doping area not doped with the first doping ions is the second doping area; and forming the storage area on a side of the second doping area away from the remaining substrate.

[0016] In some embodiments, the step of forming the second transistor includes: forming an initial fourth doping region doped with the second doping ions, the initial fourth doping region being located on a side of the dielectric layer and the storage region away from the first transistor; forming a gate dielectric layer and a gate stacked along the first direction, the gate dielectric layer being located on a side of the initial fourth doping region away from the storage region, the gate being opposite to the storage region; and using a sixth doping process to dope the first doping ions into the initial fourth doping region not blocked by the gate dielectric layer to form the fourth doping region and the sixth doping region, and the remaining initial fourth doping region not doped with the first doping ions is the fifth doping region.

[0017] According to some embodiments of the present disclosure, on the other hand, an embodiment of the present disclosure further provides a storage cell array structure, comprising: a plurality of storage cell structures as described in any one of the above items; the plurality of storage cell structures are arranged at intervals along the first direction and / or the third direction, and the first direction, the second direction and the third direction intersect with each other.

[0018] In some embodiments, a plurality of the memory cell structures are arranged at intervals along the first direction, a first electrical connection layer and a second electrical connection layer both extend along the first direction, the first electrical connection layer is in contact and connected with the plurality of the memory cell structures arranged at intervals along the first direction, and the second electrical connection layer is also in contact and connected with the plurality of the memory cell structures arranged at intervals along the first direction.

[0019] In some embodiments, the second transistor further includes: a gate dielectric layer located on a side of the fifth doping region along the first direction away from the storage region; a gate located on a side of the gate dielectric layer along the first direction away from the fifth doping region; a plurality of the storage cell structures are arranged at intervals along the third direction, the gate extends along the third direction, and the gate corresponds to the plurality of the storage cell structures arranged at intervals along the third direction.

[0020] The technical solution provided by the embodiments of the present disclosure has at least the following advantages:

[0021] The storage area is not only in contact with the second doping area in the first transistor, but also in contact with the fifth doping area in the second transistor, so that the charge can be stored in the storage area at the same time with the help of the first transistor and the second transistor, which is conducive to improving the charge storage efficiency of the storage cell structure, that is, improving the efficiency of writing operations on the storage cell structure to improve the electrical performance of the storage cell structure. Moreover, the first transistor, the storage area and the second transistor are stacked along the first direction, which is conducive to reducing the layout area of ​​the storage cell structure in a plane perpendicular to the first direction. Compared with the 1T1C type storage cell structure, the storage cell structure provided in the embodiment of the present disclosure is conducive to reducing its own size. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] One or more embodiments are exemplarily illustrated by pictures in the corresponding drawings, which do not constitute a limitation on the embodiments. Elements with the same reference numerals in the drawings are represented as similar elements, and the figures in the drawings do not constitute a scale limitation unless otherwise stated. In order to more clearly illustrate the embodiments of the present disclosure or the technical solutions in the traditional technology, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0023] Figures 1 to 3 Three schematic diagrams of three-dimensional structures of a storage unit structure provided in an embodiment of the present disclosure;

[0024] Figure 4 and Figure 5 Two schematic cross-sectional views of a storage unit structure provided in one embodiment of the present disclosure;

[0025] Figures 6 to 14 A schematic cross-sectional structure diagram corresponding to each step in a method for manufacturing a memory cell structure provided by another embodiment of the present disclosure;

[0026] Fig.15 Three schematic diagrams of circuit structures corresponding to a read-write control method for a storage unit structure provided by another embodiment of the present disclosure;

[0027] Fig.16 and Fig.17 Two three-dimensional structural schematic diagrams of a storage cell array structure provided in yet another embodiment of the present disclosure. DETAILED DESCRIPTION

[0028] As known from the background art, the electrical performance of the capacitor-free memory cell structure needs to be improved.

[0029] The present disclosure provides a memory cell structure and a manufacturing method thereof, and a memory cell array structure. In the memory cell structure, the memory region is not only in contact with the second doping region in the first transistor, but also in contact with the fifth doping region in the second transistor, so that the charge can be stored in the memory region at the same time with the help of the first transistor and the second transistor, which is conducive to improving the charge storage efficiency of the memory cell structure, that is, improving the efficiency of writing operations to the memory cell structure, so as to improve the electrical performance of the memory cell structure. Moreover, the first transistor, the memory region, and the second transistor are stacked along the first direction, which is conducive to reducing the layout area of ​​the memory cell structure in a plane perpendicular to the first direction. Compared with the 1T1C type memory cell structure, the memory cell structure provided in the embodiment of the present disclosure is conducive to reducing its own size.

[0030] The following will describe the various embodiments of the present disclosure in detail with reference to the accompanying drawings. However, it will be appreciated by those skilled in the art that in the various embodiments of the present disclosure, many technical details are provided in order to enable the reader to better understand the embodiments of the present disclosure. However, even without these technical details and various changes and modifications based on the following embodiments, the technical solutions claimed in the embodiments of the present disclosure can be implemented.

[0031] An embodiment of the present disclosure provides a memory cell structure, which will be described in detail below with reference to the accompanying drawings. Figures 1 to 3 Three schematic diagrams of three-dimensional structures of a storage unit structure provided in an embodiment of the present disclosure; Figure 4 and Figure 5 Two schematic cross-sectional views of a storage unit structure provided in accordance with an embodiment of the present disclosure.

[0032] refer to Figures 1 to 5 , the memory cell structure 100 includes: a first transistor 101, a storage region SN, and a second transistor 102 that are sequentially contacted and connected along a first direction X; wherein the first transistor 101 includes a first doping region 111, a second doping region 121, and a third doping region 131 that are sequentially contacted and connected along a second direction Y, the second transistor 102 includes a fourth doping region 112, a fifth doping region 122, and a sixth doping region 132 that are sequentially contacted and connected along the second direction Y, the storage region SN has a first side a and a second side b that are opposite to each other along the first direction X, the second doping region 121 is in contact with the first side a, the fifth doping region 122 is in contact with the second side b, and the first direction X and the second direction Y intersect; the first doping region 111, the third doping region 131, the fourth doping region 112, and the sixth doping region 132 are all doped with first doping ions, the second doping region 121, the storage region SN, and the fifth doping region 122 are all doped with second doping ions, and one of the first doping ions and the second doping ions is an N-type doping ion, and the other is a P-type doping ion.

[0033] It can be understood that the storage area SN is not only in contact with the second doping area 121 in the first transistor 101, but also in contact with the fifth doping area 122 in the second transistor 102, so that the charge can be stored in the storage area SN at the same time with the help of the first transistor 101 and the second transistor 102, which is conducive to improving the charge storage efficiency of the storage cell structure 100, that is, improving the efficiency of writing operations on the storage cell structure 100, so as to improve the electrical performance of the storage cell structure 100. Moreover, the first transistor 101, the storage area SN and the second transistor 102 are stacked along the first direction X, which is conducive to reducing the layout area of ​​the storage cell structure 100 in the plane perpendicular to the first direction X. Compared with the 1T1C type storage cell structure, the storage cell structure 100 provided in the embodiment of the present disclosure is conducive to reducing its own size.

[0034] In some embodiments, the first doping ion is an N-type ion, and the second doping ion is a P-type ion. In some embodiments, the N-type ion may include at least one of arsenic ions, phosphorus ions, or antimony ions; the P-type ion may include at least one of boron ions, indium ions, or gallium ions. In other embodiments, the first doping ion may be a P-type ion, and the second doping ion may be an N-type ion.

[0035] It should be noted that the following exemplary description is given by taking the first doping ions as N-type ions and the second doping ions as P-type ions.

[0036] The embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings.

[0037] In some embodiments, reference Figures 1 to 5 , the first transistor 101 may be a triode. Thus, the first doping region 111 serves as the emitter of the triode, the second doping region 121 serves as the base of the triode, and the third doping region 131 serves as the collector of the triode.

[0038] It is understandable that the first transistor 101 can be regarded as two diodes with a common anode connected together. The first transistor 101 can be an NPN bipolar transistor. In the normal working state of the first transistor 101, the PN junction formed by the base and the emitter, that is, the emitter junction, is in a forward biased state, and the PN junction formed by the base and the collector, that is, the collector junction, is in a reverse biased state.

[0039] In addition, the triode has a current amplification function, that is, the small current input to the base will be amplified to generate a larger current flowing from the collector to the emitter. In this way, when the first transistor 101 is used as a read transistor in the memory cell structure 100, the amount of charge that can be stored in the storage area SN is small, that is, when the current provided by the storage area SN to the second doping area 121 is small, a larger current is read from the third doping area 131 of the first transistor 101 by using the current amplification function of the first transistor 101, which is conducive to improving the sensitivity of the memory cell structure 100 to the current, so as to achieve the storage of data with a logic level of 1 and the reading of data with a logic level of 1 in the memory cell structure 100 through a small current, thereby helping to improve the electrical performance of the memory cell structure 100.

[0040] In some embodiments, reference Figures 1 to 5 The second transistor 102 includes a metal-oxide semiconductor field effect transistor; the metal-oxide semiconductor field effect transistor may also include: a gate dielectric layer 142, located on a side of the fifth doping region 122 along the first direction X away from the storage region SN; a gate 152, located on a side of the gate dielectric layer 142 along the first direction X away from the fifth doping region 122.

[0041] Thus, one of the fourth doping region 112 and the sixth doping region 132 can serve as the source of the second transistor 102 , the other can serve as the drain of the second transistor 102 , and part of the fifth doping region 122 serves as the channel region of the second transistor 102 when the second transistor 102 is turned on.

[0042] It is understandable that there is gate-induced drain leakage (GIDL) in the second transistor 102. The working principle of the memory cell structure 100 is described below by taking the second transistor 102 as an NMOS transistor and the first transistor as a triode transistor as an example.

[0043] The first transistor 101 is used as a read transistor of the memory cell structure 100 , the second transistor 102 is used as a write transistor of the memory cell structure 100 , the fourth doping region 112 is used as a source of the second transistor 102 , and the sixth doping region 132 is used as a drain of the second transistor 102 .

[0044] If the memory cell structure 100 is operated to write a logic level 1, a large negative voltage is applied to the gate 152, so that the second transistor 102 is in the off state, and a large GIDL is generated in the second transistor 102, which flows from the sixth doping region 132 to the fifth doping region 122. Further, a large GIDL flows from the fifth doping region 122 to the memory region SN; at this time, the voltage at the memory region SN is large, and the first transistor 101 is in a strong electric field environment and produces a collision ionization phenomenon, that is, the free carriers inside the first transistor 101 are accelerated to have a sufficiently high energy under the action of the strong electric field and collide to generate multiplication. In this way, the GIDL phenomenon of the second transistor 102 and the collision ionization phenomenon of the first transistor 101 are used to store charges. On the one hand, it is beneficial to increase the amount of charge stored in the memory region SN, and on the other hand, it is beneficial to improve the charge storage efficiency of the memory cell structure 100, so as to complete the writing of the logic level 1 and improve the electrical performance of the memory cell structure 100. It should be noted that the negative voltage is a voltage less than 0V.

[0045] If a logic level 0 is written to the memory cell structure 100, the gate 152 is grounded to avoid GIDL in the second transistor 102, and the first transistor 101 is controlled to be in a non-operating state to avoid current in the storage area SN to complete the writing of the logic level 0.

[0046] If a read operation is performed on the memory cell structure 100, a small negative voltage is applied to the gate 152 to avoid GIDL in the second transistor 102, and the first transistor 101 is controlled to be in a normal working state. In this way, if the amount of charge stored in the storage area SN is large, that is, there is a large current in the storage area SN, a larger current can be read out from the third doping area 131 of the first transistor 101 by using the current amplification effect of the first transistor 101 to complete the reading of the logic level 1; if the amount of charge stored in the storage area SN is small or even there is no current in the storage area SN, a smaller current can be read out from the third doping area 131 of the first transistor 101 by using the current amplification effect of the first transistor 101, or the current read out from the third doping area 131 is 0, to complete the reading of the logic level 0. It should be noted that the larger and smaller in the above description are all relative, and can be flexibly adjusted according to actual conditions.

[0047] In the above embodiment, the doping concentration of the second doping ions in the second doping region 121 may be greater than that in the storage region SN, and the doping concentration of the second doping ions in the second doping region 121 is greater than that in the fifth doping region 122 .

[0048] It can be understood that among the second doping region 121, the storage region SN and the fifth doping region 122, the doping concentration of the second doping ions in the second doping region 121 is the largest. This is beneficial to increase the number of majority carriers in the second doping region 121 to increase the collision ionization rate in the first transistor 101, which is beneficial to further increase the amount of charge stored in the storage region SN and further improve the charge storage efficiency of the storage cell structure 100.

[0049] In practical applications, the doping concentrations of the second doping ions in the storage area SN and the fifth doping area 122 may be consistent, on the premise that the doping concentration of the second doping ions in the second doping area 121 is the largest; or, the doping concentrations of the second doping ions in the second doping area 121, the storage area SN and the fifth doping area 122 may all be consistent.

[0050] In some embodiments, the doping concentration of the second doping ions in the second doping region 121 may be in the range of 1×10 18 atom / cm 3 ~1×10 19 atom / cm 3 The doping concentration of the second doping ion in the storage region SN may be in the range of 1×10 16 atom / cm 3 ~8×10 17 atom / cm 3 , and / or, the doping concentration of the second doping ion in the fifth doping region 122 may be in the range of 1×10 16 atom / cm 3 ~8×10 17 atom / cm 3 It should be noted that the doping concentration of the second doping ion in either the storage region SN or the fifth doping region 122 is in the range of 1×10 16 atom / cm 3 ~8×10 17 atom / cm 3 That is, it is not necessary that the doping concentration range of the second doping ion in both the storage region SN and the fifth doping region 122 is 1×10 16 atom / cm 3 ~8×10 17 atom / cm 3 .

[0051] In some embodiments, in addition to the first doping ions, the first doping region 111 and the third doping region 131 are also doped with a small amount of second doping ions, that is, the doping concentration of the second doping ions in the first doping region 111 is much lower than the doping concentration of the first doping ions in the first doping region 111, and the doping concentration of the second doping ions in the third doping region 131 is much lower than the doping concentration of the first doping ions in the third doping region 131.

[0052] In some embodiments, in addition to the first doping ions, the fourth doping region 112 and the sixth doping region 132 are also doped with a small amount of second doping ions, that is, the doping concentration of the second doping ions in the fourth doping region 112 is much lower than the doping concentration of the first doping ions in the fourth doping region 112, and the doping concentration of the second doping ions in the sixth doping region 132 is much lower than the doping concentration of the first doping ions in the sixth doping region 132.

[0053] In some embodiments, reference Figures 2 to 4 The memory cell structure 100 may further include: a first electrical connection layer 103, which is located on a side of the first doping region 111 away from the second doping region 121 along the second direction Y, and the first electrical connection layer 103 is in contact with and connected to the first doping region 111 and the fourth doping region 112 respectively.

[0054] In other embodiments, reference Figure 5 The storage cell structure 100 may further include: a first electrical connection layer 103, wherein along the second direction Y, the first electrical connection layer 103 penetrates the fourth doping region 112 and penetrates at least a portion of the thickness of the first doping region 111 to achieve contact connection between the first electrical connection layer 103 and the first doping region 111 and the fourth doping region 112, respectively.

[0055] in this way, Figures 2 to 5 The example shown is advantageous in controlling the first doped region 111 and the fourth doped region 112 in the memory cell structure 100 using the same first electrical connection layer 103 to reduce the degree of control of the first transistor 101 and the second transistor 102 in the memory cell structure 100 and simplify the preparation process for forming the memory cell structure 100.

[0056] In some embodiments, reference Figures 2 to 4 The memory cell structure 100 may further include: a second electrical connection layer 104, which is located on a side of the third doping region 131 away from the second doping region 121 along the second direction Y, and the second electrical connection layer 104 is in contact with and connected to the third doping region 131 and the sixth doping region 132 respectively.

[0057] In other embodiments, reference Figure 5The memory cell structure 100 may further include: a second electrical connection layer 104, wherein along the second direction Y, the second electrical connection layer 104 penetrates the sixth doping region 132 and penetrates at least a portion of the thickness of the third doping region 131 to achieve contact connection between the second electrical connection layer 104 and the third doping region 131 and the sixth doping region 132, respectively.

[0058] in this way, Figures 2 to 5 The example shown is advantageous in controlling the third doping region 131 and the sixth doping region 132 in the memory cell structure 100 using the same second electrical connection layer 104 to reduce the degree of control of the first transistor 101 and the second transistor 102 in the memory cell structure 100 and simplify the preparation process for forming the memory cell structure 100.

[0059] In some embodiments, reference Figures 2 to 5 The memory cell structure 100 may further include: a dielectric layer 105, located between the first doping region 111 and the fourth doping region 112, and between the third doping region 131 and the sixth doping region 132, and a sidewall surrounding the memory region SN and extending along the first direction X. In this way, it is beneficial to realize electrical insulation between the first doping region 111 and the fourth doping region 112 through the dielectric layer 105, to realize electrical insulation between the third doping region 131 and the sixth doping region 132 through the dielectric layer 105, and to realize electrical insulation between the memory region SN and the first electrical connection layer 103 and the second electrical connection layer 104 through the dielectric layer 105.

[0060] In some embodiments, reference Figures 3 to 5 The dielectric layer 105 includes a first dielectric layer 115 and a second dielectric layer 125, wherein the first dielectric layer 115 surrounds the sidewall of the storage area SN extending along the first direction X; the second dielectric layer 125 is located on the sidewall of the first dielectric layer 115 away from the storage area SN, and is located on a portion of the sidewall of the first electrical connection layer 103 extending along the first direction X and a portion of the sidewall of the second electrical connection layer 104 extending along the first direction X. In this way, on the basis of achieving the above-mentioned electrical insulation, the first dielectric layer 115 can also be used to support the storage area SN to prevent deformation or even collapse of the storage area SN, so as to improve the structural stability of the storage cell structure 100, thereby further improving the electrical performance of the storage cell structure 100.

[0061] In some embodiments, the material of the first dielectric layer 115 includes at least one of silicon nitride and silicon oxynitride, and the material of the second dielectric layer 125 includes at least silicon oxide.

[0062] In some embodiments, reference Figures 1 to 5, taking the plane perpendicular to the first direction X as the reference plane, the orthographic projection of the second doping region 121 on the reference plane is located in the orthographic projection of the storage region SN on the reference plane, so that it is beneficial to increase the contact area between the storage region SN and the second doping region 121, so as to reduce the contact resistance between the storage region SN and the second doping region 121, and reduce the probability of carrier recombination in the storage region SN and the second doping region 121, so as to improve the charge storage efficiency of the storage region SN.

[0063] In some embodiments, reference Figures 1 to 5 The orthographic projection of the fifth doping region 122 on the reference plane is located in the orthographic projection of the storage region SN on the reference plane. This is beneficial to increasing the contact area between the storage region SN and the fifth doping region 122, so as to reduce the contact resistance between the storage region SN and the fifth doping region 122, and reduce the probability of carrier recombination in the storage region SN and the fifth doping region 122, thereby helping to improve the charge storage efficiency of the storage region SN.

[0064] In some embodiments, reference Figures 1 to 5 The orthographic projection of the first doped region 111 on the reference plane and the orthographic projection of the fourth doped region 112 on the reference plane can overlap, which is beneficial to improving the structural regularity of the first transistor 101 and the second transistor 102, so that the surface of the first electrical connection layer 103 extending along the first direction X is flat, thereby helping to reduce the complexity of preparing the storage unit structure 100.

[0065] In some embodiments, reference Figures 1 to 5 The orthographic projection of the third doping region 131 on the reference plane and the orthographic projection of the sixth doping region 132 on the reference plane can overlap, which is beneficial to improving the structural regularity of the first transistor 101 and the second transistor 102, and making the surface of the second electrical connection layer 104 extending along the first direction X smooth, thereby helping to reduce the complexity of preparing the memory cell structure 100.

[0066] In some embodiments, reference Figures 1 to 5 The orthographic projection of the storage area SN on the reference plane and the orthographic projection of the gate 152 on the reference plane can overlap, which is beneficial to improving the structural regularity of the first transistor 101 and the second transistor 102 to reduce the complexity of preparing the memory cell structure 100.

[0067] In summary, the storage region SN is not only in contact with the second doping region 121, but also in contact with the fifth doping region 122, so that the charge can be stored in the storage region SN at the same time with the help of the first transistor 101 and the second transistor 102, which is conducive to improving the charge storage efficiency of the storage cell structure 100, that is, improving the efficiency of the write operation on the storage cell structure 100, so as to improve the electrical performance of the storage cell structure 100. Moreover, the first transistor 101, the storage region SN and the second transistor 102 are stacked along the first direction X, which is conducive to reducing the layout area of ​​the storage cell structure 100 in the plane perpendicular to the first direction X. Compared with the 1T1C type storage cell structure, the storage cell structure 100 provided in an embodiment of the present disclosure is conducive to reducing its own size.

[0068] Another embodiment of the present disclosure further provides a method for manufacturing a memory cell structure, which is used to form the memory cell structure provided by the above embodiment. The method for manufacturing a memory cell structure provided by another embodiment of the present disclosure will be described in detail below in conjunction with the accompanying drawings. Figures 6 to 14 This is a schematic cross-sectional structure diagram corresponding to each step in a method for manufacturing a memory cell structure according to another embodiment of the present disclosure. It should be noted that the parts that are the same or corresponding to the above embodiments are not described in detail here.

[0069] refer to Figures 1 to 14 The manufacturing method of the memory cell structure 100 includes: providing a substrate 110; performing doping and patterning on different regions of the substrate 110 to form a first transistor 101 including a first doping region 111, a second doping region 121 and a third doping region 131 that are sequentially contacted and connected along a second direction Y, and forming a storage region SN located on a side of the second doping region 121 away from the remaining substrate 110; forming a dielectric layer 105, the dielectric layer 105 surrounds the sidewall of the storage region SN extending along the first direction X and covers the side of the first doping region 111 and the third doping region 131 away from the remaining substrate 110; forming a second transistor 102, the second transistor 102 is located on the dielectric layer 105; The layer 105 and the storage area SN are on a side away from the first transistor 101; wherein the second transistor 102 includes a fourth doping region 112, a fifth doping region 122 and a sixth doping region 132 which are contact-connected in sequence along the second direction Y, the fifth doping region 122 is contact-connected with the storage area SN, the first direction X and the second direction Y intersect, the first doping region 111, the third doping region 131, the fourth doping region 112, and the sixth doping region 132 are all doped with first doping ions, the second doping region 121, the storage area SN and the fifth doping region 122 are all doped with second doping ions, one of the first doping ions and the second doping ions is an N-type doping ion, and the other is a P-type doping ion.

[0070] It is understandable that the manufacturing method of the memory cell structure 100 provided in another embodiment of the present disclosure is not unique, and another embodiment of the present disclosure will be described in more detail below using the drawings as the main example.

[0071] In some embodiments, reference Figures 6 to 8 , forming the first transistor 101 and the storage area SN may include the following steps:

[0072] refer to Figure 6 , the second doping ions are doped into the substrate 110 using two different doping processes to form an initial first doping region 120 and an initial second doping region 130, and the remaining substrate 110 is a substrate 140, the initial second doping region 130 is located on a side of the substrate 140 away from the initial first doping region 120, and the doping concentration of the second doping ions in the initial second doping region 130 is less than the doping concentration in the initial first doping region 120.

[0073] It can be understood that the initial first doping region 120 is subsequently used to form the first transistor 101, and the initial second doping region 130 is subsequently used to form the storage region SN. The doping concentration of the second doping ions in the initial second doping region 130 is lower than the doping concentration in the initial first doping region 120, so that the subsequent doping concentration of the second doping ions in the storage region SN can be lower than the doping concentration in the second doping region 121. In practical applications, the doping concentrations of the second doping ions in the initial first doping region 120 and the initial second doping region 130 can also be consistent, that is, the subsequent doping concentrations of the second doping ions in the second doping region 121 and the storage region SN can also be consistent.

[0074] In some embodiments, along the second direction Y, the substrate 140 includes a stacked semiconductor layer 170 and an isolation layer 180. The material type of the semiconductor layer 170 may be an elemental semiconductor material or a crystalline inorganic compound semiconductor material, and the elemental semiconductor material may be silicon or germanium; the crystalline inorganic compound semiconductor material may be silicon carbide, silicon germanium, gallium arsenide, or indium gallium, etc.; the material of the isolation layer 180 includes at least one of isolation materials such as silicon oxide, silicon nitride, or silicon oxynitride.

[0075] In some embodiments, the steps of forming the initial first doping region 120 and the initial second doping region 130 include: forming the initial first doping region 120 in the substrate 110 using a first doping process; and forming the initial second doping region 130 in the substrate 110 using a second doping process. The process parameters of the first doping process are different from the process parameters of the second doping process. For example, both the first doping process and the second doping process are ion implantation processes, and the power of the first doping process is controlled to be greater than the power of the second doping process, so that the depth of the second doping ions implanted into the substrate 110 in the first doping process is greater than the depth of the second doping ions implanted into the substrate 110 in the second doping process, thereby forming the initial first doping region 120 in contact with the substrate 140 and the initial second doping region 130 located on the side of the substrate 140 away from the initial first doping region 120. It should be noted that another embodiment of the present disclosure does not limit the order of forming the initial first doping region 120 and the initial second doping region 130. The initial first doping region 120 may be formed by the first doping process first, and then the initial second doping region 130 may be formed by the second doping process. Alternatively, the initial second doping region 130 may be formed by the second doping process first, and then the initial first doping region 120 may be formed by the first doping process.

[0076] Combined with reference Figure 6 and Figure 7 , the initial second doping region 130 is patterned to form a storage region SN.

[0077] Combined with reference Figure 7 and Figure 8 , the first doping ions are doped into the initial first doping region 120 not blocked by the storage region SN by the third doping process to form the first doping region 111 and the third doping region 131, and the remaining initial first doping region 120 not doped with the first doping ions is the second doping region 121. In this way, in addition to being doped with the first doping ions, the first doping region 111 and the third doping region 131 are also doped with a small amount of the second doping ions.

[0078] In other embodiments, reference Fig. 9 and Figure 8 , forming the first transistor 101 and the storage area SN may include the following steps:

[0079] refer to Fig. 9 , a fourth doping process is used to dope the second doping ions into the substrate 110 to form an initial third doping region 150 ; a mask layer 106 having an opening 116 is formed on a side of the initial third doping region 150 away from the remaining substrate 110 .

[0080] Combined with reference Fig. 9 and Figure 8, the first doping ions are doped into the initial third doping region 150 exposed by the opening 116 using a fifth doping process to form the first doping region 111 and the third doping region 131 , and the remaining initial third doping region 150 not doped with the first doping ions is the second doping region 121 .

[0081] refer to Figure 8 A storage region SN is formed on a side of the second doping region 121 away from the remaining substrate 110 .

[0082] It should be noted that the parts that are the same as or corresponding to the above embodiments are not described in detail here.

[0083] In some other embodiments, forming the first transistor and the storage area may include the following steps: using different doping processes to dope different doping ions into different regions of the substrate to form the first transistor, for example, performing a seventh doping process on the substrate used to form the first doping region and the third doping region to form the first doping region and the third doping region, and performing an eighth doping process on the substrate used to form the second doping region to form the second doping region. The first doping ions are doped into the substrate in the seventh doping process, and the second doping ions are doped into the substrate in the eighth doping process; and a storage area doped with the second doping ions is formed on the side of the second doping region away from the remaining substrate.

[0084] In some embodiments, after forming the first transistor 101 and before forming the second transistor 102, the manufacturing method further includes the following steps:

[0085] refer to Fig.10 , forming a first dielectric film 135 to cover the exposed surface of the storage area SN, that is, covering the top surface of the storage area SN away from the substrate 140 and covering the side walls of the storage area SN extending along the first direction X; forming a second dielectric film 145 to cover the exposed surface of the first dielectric film 135, that is, covering the top surface of the first dielectric film 135 away from the substrate 140 and covering the side walls of the first dielectric film 135 extending along the first direction X.

[0086] It should be noted that the subsequent Figures 11 to 13 The structural schematic diagram corresponding to each step shown is to form Figure 5 The storage unit structure 100 shown is an example. In practical applications, it can also be based on Fig.10 The structural schematic diagram shown is formed as Figure 4 A memory cell structure 100 is shown.

[0087] In some embodiments, to finally form Figure 5 The memory cell structure 100 shown in FIG. Fig.10 and Fig.11, the first dielectric film 135 and the second dielectric film 145 are etched back to expose the top surface of the storage area SN away from the substrate 140, and the remaining first dielectric film 135 is used as the first dielectric layer 115. It should be noted that in order to form the first electrical connection layer 103 (refer to Figure 5 ) and the second electrical connection layer 104 (reference Figure 5 ), and the remaining second dielectric film 145, Figure 8 The first doping region 111 and the third doping region 131 formed in the embodiment are etched.

[0088] In other embodiments, to finally form Figure 4 The memory cell structure 100 shown in FIG. Fig.10 and Fig.11 , the first dielectric film 135 and the second dielectric film 145 are etched back to expose the top surface of the storage area SN away from the substrate 140, and the remaining first dielectric film 135 is used as the first dielectric layer 115, and the remaining second dielectric film 145 is used as the second dielectric layer 125. The first dielectric layer 115 and the second dielectric layer 125 constitute the dielectric layer 105. Subsequently, the dielectric layer 105, the first doping region 111 and the fourth doping region 112 (refer to Figure 4 ) A first electrical connection layer 103 is formed on a side away from the storage area SN (reference Figure 4 ), in the dielectric layer 105, the third doping region 131 and the sixth doping region 132 (reference Figure 4 ) A second electrical connection layer 104 is formed on a side away from the storage area SN (reference Figure 4 ).

[0089] In some embodiments, reference Fig.12 and Fig.13 , forming the second transistor 102 may include the following steps:

[0090] refer to Fig.12 , an initial fourth doping region 160 doped with the second doping ions is formed, and the initial fourth doping region 160 is located on a side of the dielectric layer 105 and the storage region SN away from the first transistor 101 .

[0091] It can be understood that the initial fourth doping region 160 is subsequently used to form the fourth doping region 112, the fifth doping region 122, and the sixth doping region 132. In some examples, the doping concentration of the second doping ions in the initial fourth doping region 160 is less than the doping concentration in the initial first doping region 120, so that the subsequent doping concentration of the second doping ions in the fifth doping region 122 can be less than the doping concentration in the second doping region 121. In practical applications, the doping concentrations of the second doping ions in the initial fourth doping region 160 and the initial first doping region 120 can also be consistent, that is, the subsequent doping concentrations of the second doping ions in the fifth doping region 122 and the second doping region 121 can also be consistent.

[0092] Continue to refer Fig.12 , forming a gate dielectric layer 142 and a gate 152 stacked along the first direction X, the gate dielectric layer 142 is located on a side of the initial fourth doping region 160 away from the storage region SN, and the gate 152 is opposite to the storage region SN.

[0093] In some embodiments, after forming the gate 152 and before forming the fourth doping region 112, the fifth doping region 122, and the sixth doping region 132, refer to Fig.13 The manufacturing method may further include: forming a protection layer 155 to cover the sidewalls of the gate dielectric layer 142 and the gate 152 extending along the first direction X. In this way, damage to the gate dielectric layer 142 and the gate 152 is avoided when the fourth doping region 112 , the fifth doping region 122 , and the sixth doping region 132 are subsequently formed.

[0094] Continue to refer Fig.13 , the first doping ions are doped into the initial fourth doping region 160 not blocked by the gate dielectric layer 142 by the sixth doping process to form the fourth doping region 112 and the sixth doping region 132, and the remaining initial fourth doping region 160 not doped with the first doping ions is the fifth doping region 122. In this way, in addition to being doped with the first doping ions, the fifth doping region 122 and the sixth doping region 132 are also doped with a small amount of the second doping ions.

[0095] In some other embodiments, forming the second transistor may include the following steps: forming an initial fifth doping region doped with second doping ions; forming a mask layer having an opening on a side of the initial fifth doping region away from the remaining substrate; doping the initial fifth doping region exposed by the opening with the first doping ions using the ninth doping process to form a fourth doping region and a sixth doping region, and the remaining initial fifth doping region not doped with the first doping ions is the fifth doping region; forming a gate dielectric layer and a gate on a side of the fifth doping region away from the remaining storage region. The same or corresponding parts as those in the above embodiments are not described in detail here.

[0096] In some other embodiments, forming the second transistor may include the following steps: forming an initial semiconductor layer, and using different doping processes to dope different doping ions into different regions of the initial semiconductor layer to form a fourth doping region, a fifth doping region, and a sixth doping region. For example, the initial semiconductor layer used to form the fourth doping region and the sixth doping region is subjected to a seventh doping process to form the fourth doping region and the sixth doping region, and the initial semiconductor layer used to form the fifth doping region is subjected to an eighth doping process to form the fifth doping region. In the seventh doping process, the first doping ions are doped into the initial semiconductor layer, and in the eighth doping process, the second doping ions are doped into the initial semiconductor layer; and a gate dielectric layer and a gate are formed on a side of the fifth doping region away from the remaining storage region.

[0097] It should be noted that whether it is formed as Figure 5 The memory cell structure 100 shown in FIG. Figure 4 In the memory cell structure 100 shown, the second transistor can be formed by using the above three methods.

[0098] In some embodiments, forming the first electrical connection layer 103 and the second electrical connection layer 104 may include the following steps:

[0099] Combined with reference Fig.13 and Fig.14 ,right Figure 8 The first doping region 111 and the third doping region 131 are formed in Fig.13 The fourth doping region 112 and the sixth doping region 132 formed in the process and the remaining second dielectric film 145 are further patterned to form a first contact hole 113 and a second contact hole 114.

[0100] Combined with reference Fig.14 and Figure 5 , forming a first electrical connection layer 103 that fills the first contact hole 113, and forming a second electrical connection layer 104 that fills the second contact hole 114. It should be noted that in another embodiment of the present disclosure, there is no limitation on the order of forming the first electrical connection layer 103 and the second electrical connection layer 104. The first electrical connection layer 103 may be formed first, and then the second electrical connection layer 104 may be formed, or the second electrical connection layer 104 may be formed first, and then the first electrical connection layer 103 may be formed.

[0101] In summary, in the memory cell structure 100 formed by the manufacturing method of the memory cell structure provided by another embodiment of the present disclosure, the memory region SN is not only in contact with the second doping region 121, but also in contact with the fifth doping region 122, so that the charge can be stored in the memory region SN at the same time by means of the first transistor 101 and the second transistor 102, thereby facilitating the improvement of the charge storage efficiency of the memory cell structure 100, that is, improving the efficiency of the write operation on the memory cell structure 100, so as to improve the electrical performance of the memory cell structure 100. Moreover, the first transistor 101, the memory region SN and the second transistor 102 are stacked and arranged along the first direction X, which is conducive to reducing the layout area of ​​the memory cell structure 100 in the plane perpendicular to the first direction X. Compared with the 1T1C type memory cell structure, the memory cell structure 100 provided in the embodiment of the present disclosure is conducive to reducing its own size.

[0102] Another embodiment of the present disclosure further provides a read-write control method for a storage cell structure, which is used to control the storage cell structure provided by the above embodiment or the storage cell structure formed by the manufacturing method of the storage cell structure provided by the above embodiment. Fig.15 Schematic diagrams of three circuit structures corresponding to the read-write control method of the storage unit structure provided in another embodiment of the present disclosure. It should be noted that the parts that are the same or corresponding to the above embodiments are not described in detail here.

[0103] The following reference Fig.15 and Figure 4 The read and write control method of the memory cell structure 100 is described in detail.

[0104] Combined with reference Fig.15 15a and Figure 4 If a logic level 1 is written to the memory cell structure 100, a first negative voltage, for example -0.5V, is applied to the gate 152, so that the first transistor 101 is in an off state; the first electrical connection layer 103 is grounded, so that the voltage at the first electrical connection layer 103 is 0V, so that the voltages at the first doping region 111 and the fourth doping region 112 are both 0V; a first positive voltage, for example 2V, is applied to the second electrical connection layer 104, so that the voltages at the third doping region 131 and the sixth doping region 132 are both 2V.

[0105] In this way, due to the large voltage difference between the gate 152 and the sixth doping region 132, the second transistor 102 is in the off state, and a large GIDL will be generated in the second transistor 102, flowing from the sixth doping region 132 to the fifth doping region 122. Further, a large GIDL will flow from the fifth doping region 122 to the storage region SN. At this time, the voltage at the storage region SN is large, and the first transistor 101 is in a strong electric field environment and produces a collision ionization phenomenon, that is, the free carriers inside the first transistor 101 are accelerated to have a sufficiently high energy under the action of the strong electric field and collide to generate multiplication. In this way, the GIDL phenomenon of the second transistor 102 and the collision ionization phenomenon of the first transistor 101 are used to store charges. On the one hand, it is beneficial to increase the amount of charge stored in the storage region SN, and on the other hand, it is beneficial to improve the charge storage efficiency of the storage cell structure 100, so as to complete the writing of the logic level 1 and improve the electrical performance of the storage cell structure 100.

[0106] Combined with reference Fig.15 15b and Figure 4 If a logic level 0 is written to the memory cell structure 100, the gate 152 is grounded, so that the voltage at the gate 152 is 0V; the first electrical connection layer 103 is grounded, so that the voltage at the first electrical connection layer 103 is 0V, so that the voltages at the first doping region 111 and the fourth doping region 112 are both 0V; a second positive voltage, for example 0.5V, is applied to the second electrical connection layer 104, so that the voltages at the third doping region 131 and the sixth doping region 132 are both 0.5V.

[0107] Thus, since the voltage difference between the gate 152 and the sixth doping region 132 is small, the second transistor 102 is in the off state, and GIDL is avoided in the second transistor 102. In addition, the voltage difference between the first doping region 111 and the third doping region 131 in the first transistor 101 is small, so as to control the first transistor 101 to be in a non-operating state, and to extract the hole carriers in the memory cell structure, so as to avoid the storage region SN having current, so as to complete the writing of logic level 0.

[0108] Combined with reference Fig.15 15c and Figure 4 If a read operation is performed on the memory cell structure 100, a second negative voltage, for example -0.1V, is applied to the gate 152, so that the first transistor 101 is in an off state, and the first electrical connection layer 103 is grounded, that is, the voltage at the first electrical connection layer 103 is 0V, so that the voltages at the first doping region 111 and the fourth doping region 112 are both 0V; a third positive voltage, for example 1V, is applied to the second electrical connection layer 104, so that the voltages at the third doping region 131 and the sixth doping region 132 are both 1V.

[0109] As such, since the voltage difference between the gate 152 and the sixth doping region 132 is small, the second transistor 102 is in an off state, and GIDL is prevented from being generated in the second transistor 102 .

[0110] If the amount of charge stored in the storage area SN is large, that is, there is a large current in the storage area SN, the voltage at the second doping area 121 is greater than the voltage at the first doping area 111, and the PN junction formed by the two is in a forward biased state, and the voltage at the third doping area 131 is greater than the voltage at the second doping area 121, and the PN junction formed by the two is in a reverse biased state, that is, the first transistor 101 is in a normal working state, and the current amplification effect of the first transistor 101 can be used to read a larger current from the third doping area 131 of the first transistor 101 to complete the reading of logic level 1.

[0111] If the amount of charge stored in the storage area SN is small or even there is no current in the storage area SN, the first transistor 101 is in a non-working state, and the current read from the third doping area 131 is 0, or the voltage at the second doping area 121 is slightly greater than the voltage at the first doping area 111, so that the transistor 101 is in a normal working state, but the current read from the third doping area 131 of the first transistor 101 by the current amplification effect of the first transistor 101 is small, so as to complete the reading of the logic level 0.

[0112] It should be noted that the first negative voltage and the second negative voltage are both voltages less than 0V, and the absolute value of the first negative voltage is greater than the absolute value of the second negative voltage, the first positive voltage, the second positive voltage and the third positive voltage are all voltages greater than 0V, and the first positive voltage is greater than the third positive voltage, and the third positive voltage is greater than the second positive voltage. In addition, Fig.15 The numerical values ​​of the first negative voltage, the second negative voltage, the first positive voltage, the second positive voltage and the third positive voltage illustrated in the figure are all reference values, and the grounding voltage in the above-mentioned writing operation and reading operation is also a reference value. In actual application, it is only necessary to make the grounding voltage greater than the negative voltage in the corresponding operation and / or less than the positive voltage in the corresponding operation. The positive voltage here is one of the first positive voltage, the second positive voltage and the third positive voltage, and the negative pressure here is one of the first negative voltage and the second negative pressure.

[0113] It can be understood that in the above-mentioned writing operation and reading operation, the voltage at each conductive structure can be flexibly adjusted according to actual conditions.

[0114] In summary, the memory cell structure 100 can store charges in the storage region SN at the same time by means of the first transistor 101 and the second transistor 102, thereby improving the charge storage efficiency of the memory cell structure 100, that is, improving the efficiency of writing operations to the memory cell structure 100, so as to improve the electrical performance of the memory cell structure 100. Moreover, the first transistor 101 has a current amplification effect, so that a larger current can be read from the third doping region 131 of the first transistor 101 by utilizing the current amplification effect of the first transistor 101, so as to improve the sensitivity of the memory cell structure 100 to current perception, thereby facilitating the improvement of the electrical performance of the memory cell structure 100.

[0115] Still another embodiment of the present disclosure further provides a memory cell array structure, which will be described in detail below with reference to the accompanying drawings. Fig.16 and Fig.17 Two three-dimensional structural schematic diagrams of a memory cell array structure provided in yet another embodiment of the present disclosure. It should be noted that the parts identical or corresponding to the above embodiments are not described in detail here.

[0116] refer to Fig.16 The memory cell array structure may include: a plurality of memory cell structures 100 as provided in the foregoing embodiments or a plurality of memory cell structures 100 manufactured by the manufacturing method provided in the foregoing embodiments; the plurality of memory cell structures 100 are arranged at intervals along the first direction X.

[0117] In some embodiments, continue to refer to Fig.16 The first electrical connection layer 103 and the second electrical connection layer 104 both extend along the first direction X, the first electrical connection layer 103 is in contact with and connected to a plurality of storage cell structures 100 arranged at intervals along the first direction X, and the second electrical connection layer 104 is also in contact with and connected to a plurality of storage cell structures 100 arranged at intervals along the first direction X.

[0118] It can be understood that the first electrical connection layer 103 is in contact with and connected to the multiple memory cell structures 100 arranged at intervals along the first direction X, which means that the first electrical connection layer 103 is in contact with and connected to the first doping region 111 and the fourth doping region 112 in the multiple memory cell structures 100; the second electrical connection layer 104 is also in contact with and connected to the multiple memory cell structures 100 arranged at intervals along the first direction X, which means that the second electrical connection layer 104 is in contact with and connected to the third doping region 131 and the sixth doping region 132 of the multiple memory cell structures.

[0119] It should be noted that Fig.16In the example, the number of memory cell structures 100 arranged at intervals along the first direction X is 2. In actual applications, the number of memory cell structures 100 arranged at intervals along the first direction X may be 3, 4, 5 or 10, etc., that is, another embodiment of the present disclosure does not limit the number of memory cell structures 100 arranged at intervals along the first direction X in the memory cell array structure.

[0120] In other embodiments, reference Fig.17 The memory cell array structure may include: a plurality of memory cell structures 100 as provided in the foregoing embodiments or a plurality of memory cell structures 100 manufactured by the manufacturing method provided in the foregoing embodiments; the plurality of memory cell structures 100 are arranged at intervals along a third direction Z, and the first direction X, the second direction Y and the third direction Z intersect with each other.

[0121] In some embodiments, continue to refer to Fig.17 , the gate 152 extends along the third direction Z, and the gate 152 corresponds to a plurality of memory cell structures 100 arranged at intervals along the third direction Z. It can be understood that the gate 152 corresponds to a plurality of memory cell structures 100 arranged at intervals along the third direction Z means that the gate 152 is in contact with the gate dielectric layer 142 in the plurality of memory cell structures 100 arranged at intervals along the third direction Z.

[0122] In some other embodiments, in addition to the gate 152 extending along the third direction Z, the gate dielectric layer 142 also extends along the third direction Z. The gate 152 corresponds to a plurality of memory cell structures 100 arranged at intervals along the third direction Z, which means that the gate 152 corresponds to the fifth doping regions 122 in the plurality of memory cell structures 100 arranged at intervals along the third direction Z, and the gate dielectric layer 142 is in contact with and connected to the fifth doping regions 122 in the plurality of memory cell structures 100 arranged at intervals along the third direction Z.

[0123] It should be noted that Fig.17 Taking the number of memory cell structures 100 arranged at intervals along the third direction Z as 2 as an example, in actual applications, the number of memory cell structures 100 arranged at intervals along the third direction Z can be 3, 4, 5 or 10, etc., that is, another embodiment of the present disclosure does not limit the number of memory cell structures 100 arranged at intervals along the third direction Z in the memory cell array structure. In addition, in order to clearly illustrate each memory cell structure 100, Fig.17 The gate electrode 152 is drawn in perspective.

[0124] In some other embodiments, in combination with reference Fig.16 and Fig.17The memory cell array structure may include: a plurality of memory cell structures 100 as provided in the above embodiments or a plurality of memory cell structures 100 manufactured by the manufacturing method provided in the above embodiments; the plurality of memory cell structures 100 are arranged at intervals along the first direction X and the third direction Z, and the first direction X, the second direction Y and the third direction Z intersect each other. The parts identical or corresponding to the above embodiments are not described in detail here.

[0125] In practical applications, multiple storage cell structures 100 may be evenly arranged along the second direction Y only; or, multiple storage cell structures 100 may be evenly arranged along the first direction X and the second direction Y; or, multiple storage cell structures 100 may be evenly arranged along the third direction Z and the second direction Y; or, multiple storage cell structures 100 may be evenly arranged along the first direction X, the second direction Y and the third direction Z.

[0126] In the above embodiments, reference Fig.16 and Fig.17 The second transistor 102 may further include: a gate dielectric layer 142 located on a side of the fifth doping region 122 along the first direction X away from the storage region SN; and a gate 152 located on a side of the gate dielectric layer 142 along the first direction X away from the fifth doping region 122 .

[0127] It should be noted that the read-write control method of the memory cell array structure is similar to the read-write control method of the memory cell structure 100, the difference being that the memory cell structure 100 that needs to be read-write controlled in the memory cell array structure is subjected to the same read-write control as in the aforementioned embodiment, and the memory cell structure 100 that does not need to be read-write controlled in the memory cell array structure is controlled to be in a non-working state. In addition, the manufacturing method of the memory cell array structure is similar to the manufacturing method of the memory cell structure 100, the difference being that when forming each individual structure, a plurality of the individual components need to be formed. In addition, the parts that are the same as or corresponding to the aforementioned embodiment are not described in detail herein.

[0128] In summary, in the memory cell structure 100, the first transistor 101, the storage area SN, and the second transistor 102 are stacked along the first direction X, which is conducive to reducing the layout area of ​​the memory cell structure 100 in a plane perpendicular to the first direction X and reducing its own size, thereby facilitating increasing the number of memory cell structures 100 in the memory cell array structure within a unit volume, that is, facilitating increasing the integration density of the memory cell array structure. In addition, the improvement of the electrical performance of the memory cell structure 100 is conducive to improving the electrical performance of the memory cell array structure.

[0129] Those skilled in the art can understand that the above-mentioned embodiments are specific examples for implementing the present disclosure, and in practical applications, various changes can be made to them in form and detail without departing from the spirit and scope of the embodiments of the present disclosure. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the embodiments of the present disclosure, so the protection scope of the embodiments of the present disclosure shall be based on the scope defined in the claims.

Claims

1. A storage unit structure, characterized in that: include: A first transistor, a storage area, and a second transistor that are sequentially contact-connected along a first direction; The first transistor includes a first doping region, a second doping region, and a third doping region that are sequentially connected in contact along a second direction, the second transistor includes a fourth doping region, a fifth doping region, and a sixth doping region that are sequentially connected in contact along the second direction, the storage region has a first side and a second side that are opposite to each other along the first direction, the second doping region is in contact with the first side, the fifth doping region is in contact with the second side, and the first direction intersects with the second direction; The first doping region, the third doping region, the fourth doping region, and the sixth doping region are all doped with first doping ions, and the second doping region, the storage region, and the fifth doping region are all doped with second doping ions, and one of the first doping ions and the second doping ions is an N-type doping ion, and the other is a P-type doping ion.

2. The storage unit structure according to claim 1, characterized in that: The doping concentration of the second doping ions in the second doping region is greater than the doping concentration in the storage region, and the doping concentration of the second doping ions in the second doping region is greater than the doping concentration in the fifth doping region.

3. The storage unit structure according to claim 2, characterized in that: The doping concentration of the second doping ion in the second doping region is in the range of 1×10 18 atom / cm 3 ~1×10 19 atom / cm 3 ; The doping concentration of the second doping ion in the storage region is in the range of 1×10 16 atom / cm 3 ~8×10 17 atom / cm 3 , and / or, the doping concentration of the second doping ion in the fifth doping region is in the range of 1×10 16 atom / cm 3 ~8×10 17 atom / cm 3 .

4. The memory cell structure according to any one of claims 1 to 3, characterized in that: The first transistor includes a triode.

5. The memory cell structure according to any one of claims 1 to 3, characterized in that: The second transistor comprises a metal-oxide semiconductor field effect transistor; The metal-oxide semiconductor field effect transistor further comprises: a gate dielectric layer, located at a side of the fifth doped region away from the storage region along the first direction; The gate is located on a side of the gate dielectric layer along the first direction away from the fifth doping region.

6. The memory cell structure according to any one of claims 1 to 3, characterized in that: Also includes: The first electrical connection layer is located on a side of the first doping region away from the second doping region along the second direction, and the first electrical connection layer is in contact with and connected to the first doping region and the fourth doping region respectively.

7. The memory cell structure according to any one of claims 1 to 3, characterized in that: It also includes: a second electrical connection layer, which is located on a side of the third doping region away from the second doping region along the second direction, and the second electrical connection layer is in contact with and connected to the third doping region and the sixth doping region respectively.

8. The memory cell structure according to any one of claims 1 to 3, characterized in that: Also includes: The dielectric layer is located between the first doping region and the fourth doping region, between the third doping region and the sixth doping region, and surrounds the sidewall of the storage region extending along the first direction.

9. A method for manufacturing a memory cell structure, characterized in that: include: providing a substrate; Performing doping and patterning on different regions of the substrate to form a first transistor including a first doping region, a second doping region and a third doping region that are sequentially contacted and connected along a second direction, and forming a storage region located on a side of the second doping region away from the rest of the substrate; forming a dielectric layer, wherein the dielectric layer surrounds the sidewall of the storage region extending along the first direction and covers a side of the first doped region and the third doped region away from the remaining substrate; forming a second transistor, wherein the second transistor is located on a side of the dielectric layer and the storage area away from the first transistor; Among them, the second transistor includes a fourth doping region, a fifth doping region and a sixth doping region which are contact-connected in sequence along the second direction, the fifth doping region is contact-connected with the storage region, the first direction and the second direction intersect, the first doping region, the third doping region, the fourth doping region and the sixth doping region are all doped with first doping ions, the second doping region, the storage region and the fifth doping region are all doped with second doping ions, one of the first doping ions and the second doping ions is an N-type doping ion, and the other is a P-type doping ion.

10. The manufacturing method according to claim 9, characterized in that: The steps of forming the first transistor and the storage area include: doping the second doping ions into the substrate using two different doping processes to form an initial first doping region and an initial second doping region, the remaining substrate being a substrate, the initial second doping region being located on a side of the substrate away from the initial first doping region, and the doping concentration of the second doping ions in the initial second doping region being lower than the doping concentration in the initial first doping region; Performing a patterning process on the initial second doped region to form the storage region; The first doping ions are doped into the initial first doping region not blocked by the storage region by a third doping process to form the first doping region and the third doping region, and the remaining initial first doping region not doped with the first doping ions is the second doping region.

11. The manufacturing method according to claim 9, characterized in that: The steps of forming the first transistor and the storage area include: doping the substrate with the second doping ions using a fourth doping process to form an initial third doping region; forming a mask layer having an opening on a side of the initial third doping region away from the remaining substrate; doping the first doping ions into the initial third doping region exposed by the opening with the fifth doping process to form the first doping region and the third doping region, and the remaining initial third doping region not doped with the first doping ions is the second doping region; The storage region is formed on a side of the second doping region away from the remaining substrate.

12. The manufacturing method according to any one of claims 9 to 11, characterized in that: The step of forming the second transistor comprises: forming an initial fourth doping region doped with the second doping ions, wherein the initial fourth doping region is located on a side of the dielectric layer and the storage region away from the first transistor; forming a gate dielectric layer and a gate stacked along the first direction, wherein the gate dielectric layer is located at a side of the initial fourth doped region away from the storage region, and the gate faces the storage region; The first doping ions are doped into the initial fourth doping region not blocked by the gate dielectric layer using a sixth doping process to form the fourth doping region and the sixth doping region, and the remaining initial fourth doping region not doped with the first doping ions is the fifth doping region.

13. A memory cell array structure, characterized in that: include: A plurality of memory cell structures according to any one of claims 1 to 8; The plurality of storage unit structures are arranged at intervals along the first direction and / or the third direction, and the first direction, the second direction and the third direction intersect each other.

14. The memory cell array structure according to claim 13, characterized in that: The plurality of storage cell structures are arranged at intervals along the first direction, the first electrical connection layer and the second electrical connection layer both extend along the first direction, the first electrical connection layer is in contact and connected with the plurality of storage cell structures arranged at intervals along the first direction, and the second electrical connection layer is also in contact and connected with the plurality of storage cell structures arranged at intervals along the first direction.

15. The memory cell array structure according to claim 13 or 14, characterized in that: The second transistor further includes: a gate dielectric layer located on a side of the fifth doping region along the first direction away from the storage region; and a gate located on a side of the gate dielectric layer along the first direction away from the fifth doping region. The plurality of memory cell structures are arranged at intervals along the third direction, the gate extends along the third direction, and the gate corresponds to the plurality of memory cell structures arranged at intervals along the third direction.

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