Silicon optical module

Abstract

The invention relates to the technical field of silicon optical communication, and discloses a silicon optical module. According to the silicon optical module, a signal transceiver is a bare chip and is arranged on a circuit board, a trans-impedance amplifier is integrated on the signal transceiver and is used for amplifying an electric signal, a digital signal processor is also integrated on the signal transceiver and is electrically connected with the trans-impedance amplifier, and the digital signal processor is used for receiving and processing the electric signal amplified by the trans-impedance amplifier. The extra packaging size of the bare chip signal transceiver is reduced, the trans-impedance amplifier and the digital signal processor are integrated on the signal transceiver, and the occupied area of the components on a circuit board is further reduced. The compact design enables the circuit board to have more space for arranging other elements, the integration level and the space utilization rate of the circuit board are improved, and the manufacturing cost of the silicon optical module is reduced.

Description

Technical Field

[0001] The present application relates to the field of silicon photonic communication technology, and in particular to a silicon photonic module. Background Art

[0002] With the continuous rapid development of my country's silicon photonic communication industry and the update and upgrade of communication technology, silicon photonic modules, as the basis for building modern high-speed information networks, play a vital role in the silicon photonic communication industry, and their continuous development is an inevitable trend. The current development of silicon photonic modules is mainly reflected in high speed and high density. On the basis of the continuous improvement of the speed of optical chips, their quantity is also increasing to ensure the transmission rate of silicon photonic modules. Compared with traditional photonic technology, the use of silicon photonic technology can better meet the urgent needs of the optical module industry for lower cost, higher integration, higher speed, lower power consumption and reliability.

[0003] Currently, the signal transceivers of silicon photonic modules generally use BGA (Ball Grid Array) packaging, which is large in size, resulting in limited circuit board layout and affecting the layout of other components on the circuit board and the length of wire bonding. Summary of the invention

[0004] An embodiment of the present application discloses a silicon photonic module, in which a signal transceiver is directly set on a circuit board using a bare chip, and a transimpedance amplifier and a digital signal processor are integrated on the signal transceiver, thereby reducing the area occupied by the signal transceiver on the circuit board, facilitating the layout of other components on the circuit board, and reducing the production cost of the silicon photonic module.

[0005] In order to achieve the above objectives, in a first aspect, an embodiment of the present application discloses a silicon photonic module, comprising: Circuit boards; A signal transceiver, which is a bare chip and is disposed on the circuit board; A transimpedance amplifier, integrated on the signal transceiver, the transimpedance amplifier is used to amplify the electrical signal; A digital signal processor is integrated on the signal transceiver and electrically connected to the transimpedance amplifier, and the digital signal processor is used to receive and process the electrical signal amplified by the transimpedance amplifier.

[0006] As an optional implementation, the silicon photonic module further includes a photodetector, which is electrically connected to the signal transceiver and is used to convert the optical signal into an electrical signal.

[0007] As an optional embodiment, the silicon photonic module includes an optical port, a receiving optical fiber, a receiving optical fiber array unit and a photodetector. The circuit board includes a first surface and a second surface arranged opposite to each other. The signal transceiver and the receiving optical fiber array unit are both arranged on the first surface of the circuit board. The receiving optical fiber is connected between the optical port and the receiving optical fiber array unit. The photodetector is arranged between the optical fiber array unit and the signal transceiver along the length direction of the circuit board. The photodetector is used to convert the optical signal refracted by the receiving optical fiber array unit into an electrical signal.

[0008] As an optional implementation, the photodetector is mounted on the circuit board by a flip-chip process, and the distance between the photodetector and the signal transceiver is 400 m~500 m, the photodetector is electrically connected to the signal transceiver.

[0009] As an optional embodiment, the silicon photonic module also includes a silicon photonic chip, a laser driver and a heat sink. The circuit board is provided with a mounting hole, the heat sink is arranged in the mounting hole, and the silicon photonic chip and the laser driver are both arranged on the heat sink.

[0010] As an optional embodiment, the heat sink includes a first surface and a second surface arranged opposite to each other, the first surface of the circuit board and the first surface of the heat sink are oriented in the same direction, and the silicon photonic chip and the laser driver are both arranged on the second surface of the heat sink.

[0011] As an optional implementation, the second surface of the heat dissipation plate and the second surface of the circuit board have a height difference along the thickness direction of the circuit board, and the outer surface of the laser driver and the second surface of the circuit board are located in the same plane.

[0012] As an optional implementation, a fiber optic groove is provided on the first surface of the heat dissipation plate, the fiber optic groove extends along the length direction of the circuit board, and the fiber optic groove is used to accommodate the receiving end optical fiber.

[0013] As an optional implementation, the silicon photonic module further includes a transmitting end fiber array unit and a transmitting end optical fiber, wherein the transmitting end fiber array unit is disposed on the second surface of the circuit board, and the transmitting end optical fiber is connected between the optical port and the transmitting end fiber array unit.

[0014] As an optional implementation, the circuit board is manufactured by an m-sap process, and the signal transceiver is manufactured by a 5nm process.

[0015] Compared with the prior art, the beneficial effects of the present application are at least: A silicon photonic module provided in an embodiment of the present application comprises a bare chip signal transceiver arranged on a circuit board, a transimpedance amplifier integrated on the signal transceiver, the transimpedance amplifier is used to amplify electrical signals, a digital signal processor is also integrated on the signal transceiver, and is electrically connected to the transimpedance amplifier, and the digital signal processor is used to receive and process the electrical signals amplified by the transimpedance amplifier. The signal transceiver of the bare chip is reduced in additional packaging volume, and the transimpedance amplifier and the digital signal processor are integrated on the signal transceiver, further reducing the area occupied by these components on the circuit board. This compact design allows more space on the circuit board for the layout of other components, improves the integration and space utilization of the circuit board, and reduces the production cost of the silicon photonic module. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0017] Figure 1 A schematic diagram of the structure of the first surface of the circuit board disclosed in the embodiment of the present application; Figure 2 A schematic diagram of the signal transmission relationship of the signal transceiver disclosed in the embodiment of the present application (including a photodetector, a laser driver and a silicon photonic chip); Figure 3 A schematic diagram of the structure of the photoelectric detector and the signal transceiver disclosed in the embodiment of the present application; Figure 4 A schematic diagram of the structure of the second side of the circuit board disclosed in the embodiment of the present application; Figure 5 for Figure 4 A partial enlarged view of point A in the middle.

[0018] Description of reference numerals: 100-silicon photonic module; 1-circuit board; 1a-first side of the circuit board; 11-signal transceiver; 111-transimpedance amplifier; 112-digital signal processor; 12-photodetector; 13-receiving end fiber array unit; 14-receiving end optical fiber; 1b-second side of the circuit board; 15-transmitting end fiber array unit; 16-transmitting end optical fiber; 17-mounting hole; 2-heat sink; 2a-first side of the heat sink; 21-optical fiber groove; 2b-second side of the heat sink; 22-laser driver; 23-silicon photonic chip; 3-optical port. DETAILED DESCRIPTION

[0019] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0020] In this application, the terms "upper", "bottom", "inner", "outer" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the drawings. These terms are mainly used to better describe the present application and its embodiments, and are not used to limit the indicated devices, elements or components to have a specific orientation, or to be constructed and operated in a specific orientation.

[0021] In addition, some of the above terms may be used to express other meanings in addition to indicating orientation or positional relationship. For example, the term "on" may also be used to express a certain dependency or connection relationship in some cases. For those of ordinary skill in the art, the specific meanings of these terms in this application can be understood according to specific circumstances.

[0022] In addition, the terms "disposed", "provided with", and "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral structure; it can be a mechanical connection, or an electrical connection; it can be a direct connection, or an indirect connection through an intermediate medium, or it can be an internal connection between two devices, elements, or components. For those of ordinary skill in the art, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0023] In addition, the terms "first", "second", etc. are mainly used to distinguish different devices, elements or components (the specific types and structures may be the same or different), and are not used to indicate or imply the relative importance and quantity of the indicated devices, elements or components. Unless otherwise specified, "plurality" means two or more.

[0024] With the continuous rapid development of my country's silicon photonic communication industry and the update and upgrade of communication technology, silicon photonic modules, as the basis for building modern high-speed information networks, play a vital role in the silicon photonic communication industry, and their continuous development is an inevitable trend. The current development of silicon photonic modules is mainly reflected in high speed and high density. On the basis of the continuous improvement of the speed of optical chips, their quantity is also increasing to ensure the transmission rate of silicon photonic modules. Compared with traditional photonic technology, the use of silicon photonic technology can better meet the urgent needs of the optical module industry for lower cost, higher integration, higher speed, lower power consumption and reliability.

[0025] At present, the signal transceiver of silicon photonic modules generally adopts BGA (Ball Grid Array) packaging, which is large in size, resulting in limited circuit board layout and affecting the layout of other components on the circuit board. The circuit board is made using HDI (High Density Interconnect) technology, and the digital signal processor and transimpedance amplifier are generally set on the circuit board by patch bonding. In this way, the bonding length and the routing of high-speed lines on the PCB will affect the performance.

[0026] Based on this, an embodiment of the present application discloses a silicon photonic module, in which a signal transceiver is directly set on a circuit board using a bare chip, and a transimpedance amplifier and a digital signal processor are integrated on the signal transceiver, thereby reducing the area occupied by the signal transceiver on the circuit board, facilitating the layout of other components on the circuit board, and reducing the production cost of the silicon photonic module.

[0027] The technical solution of the present application will be further described below in conjunction with embodiments and drawings.

[0028] See also Figure 1 and Figure 2 , Figure 1 Schematic diagram of the structure of the first side 1a of the circuit board disclosed in the embodiment of the present application, Figure 2 Schematic diagram of signal transmission relationship of the signal transceiver 11 disclosed in the embodiment of the present application (including the photodetector 12, the laser driver 22 and the silicon photonic chip 23). The embodiment of the present application discloses a silicon photonic module 100, which includes: The circuit board 1 is an important component of the silicon photonic module 100, and generally includes a transmitting end component, a receiving end component, and other necessary circuit elements; A signal transceiver 11, which is a bare chip and is disposed on the circuit board 1; A transimpedance amplifier 111 (TIA) is integrated on the signal transceiver 11. The transimpedance amplifier 111 amplifies the electrical signal based on the negative feedback mechanism of the operational amplifier. The digital signal processor 112 (DSP) is integrated on the signal transceiver 11 and is electrically connected to the transimpedance amplifier 111 . The digital signal processor 112 is used to receive and process the electrical signal amplified by the transimpedance amplifier 111 .

[0029] In this way, the signal transceiver 11 is a bare chip, which is directly arranged on the circuit board 1, and compared with the traditional packaging form, the additional packaging volume is reduced. At the same time, the transimpedance amplifier 111 and the digital signal processor 112 are integrated on the signal transceiver 11, which further reduces the area occupied by the signal transceiver 11 on the circuit board 1 and reduces the production cost of the silicon photonic module 100. This compact design allows more space on the circuit board 1 for the layout of other components, thereby improving the integration and space utilization of the circuit board 1. Through the integrated design, the electrical connection between the signal transceiver 11, the transimpedance amplifier 111 and the digital signal processor 112 is closer, which reduces the signal transmission delay and improves the response speed and work efficiency of the module.

[0030] The speed of the silicon photonic module 100 generally includes 400G, 800G and 1.6T, etc. In this embodiment, the silicon photonic module 100 is an 800G silicon photonic module 100, and the signal transceiver 11 is an eight-input and eight-output 800G PAM-4 signal transceiver 11 as a subsequent development method.

[0031] As an optional implementation, combined with Figures 1 to 3 , Figure 3 This is a structural schematic diagram of the photodetector 12 and the signal transceiver 11 disclosed in the embodiment of the present application. The silicon photonic module 100 also includes a photodetector 12, which is electrically connected to the signal transceiver 11. The photodetector 12 is used to convert optical signals into electrical signals. This process is achieved through the photoelectric effect. When light is irradiated to a photodiode made of silicon or other materials, photons are absorbed and electron-hole pairs are generated, thereby forming a measurable current, completing the photoelectric conversion process.

[0032] Since the transimpedance amplifier 111 is directly integrated on the signal transceiver 11, the photodetector 12 can be directly electrically connected to the signal transceiver 11. As a front-end component for receiving optical signals, the photodetector 12 quickly and accurately converts the received optical signals into electrical signals, and then directly transmits them to the signal transceiver 11. The small signal output by the photodetector 12 is less likely to be attenuated or interfered with.

[0033] Optionally, Figure 1 and Figure 4 , Figure 4This is a structural schematic diagram of the second side 1b of the circuit board disclosed in an embodiment of the present application. The silicon photonic module 100 includes an optical port 3, a receiving optical fiber 14, a receiving optical fiber array unit 13 and a photodetector 12. The circuit board 1 includes a first side and a second side arranged opposite to each other. The signal transceiver 11 and the receiving optical fiber array unit 13 are both arranged on the first side 1a of the circuit board. The receiving optical fiber 14 is connected between the optical port 3 and the receiving optical fiber array unit 13. The photodetector 12 is arranged between the optical fiber array unit and the signal transceiver 11 along the length direction of the circuit board 1. The photodetector 12 is used to convert the optical signal refracted by the receiving optical fiber array unit 13 into an electrical signal.

[0034] Among them, the 800G silicon photonic module 100 has eight receiving end optical fibers 14, and the receiving end optical fiber array unit 13 (RX FAU, Receiver Fiber Array Unit) receives the optical signal from the receiving end optical fiber 14 and refracts the optical signal to the corresponding photodetector 12. The photodetector 12 converts the refracted optical signal into an electrical signal and transmits it to the signal transceiver 11.

[0035] The receiving end optical fiber array unit 13, the photodetector 12 and the signal transceiver 11 are arranged in sequence along the length direction of the circuit board 1. The space in the length direction of the circuit board 1 is reasonably utilized to place the photodetector 12, so that the photodetector 12 and the signal transceiver 11 are relatively close in space, which can reduce the loss in the signal transmission process. After being converted into an electrical signal, the optical signal can be transmitted to the signal transceiver 11 with higher quality for further processing.

[0036] In some embodiments, in combination Figure 1 and Figure 3 The photodetector 12 is mounted on the circuit board 1 through a flip-chip process. The distance between the photodetector 12 and the signal transceiver 11 is 400 μm to 500 μm. The photodetector 12 is electrically connected to the signal transceiver 11.

[0037] Flip-chip technology, also known as flip chip technology, is an advanced integrated circuit packaging technology. In traditional packaging technology, the chip is packaged at the bottom and connected to the packaging substrate through gold wires. Flip-chip technology directly flips the chip and mounts it on the packaging substrate, and then uses tiny solder joints or conductive glue to connect. Compared with traditional packaging technology, Flip-chip technology is more compact, can significantly reduce the size and thickness of electronic products, can shorten the transmission distance of electrical signals, reduce adverse effects such as resistance and inductance, and improve the electrical performance of the chip.

[0038] If the distance between the photodetector 12 and the signal transceiver 11 is too small, it will affect the installation of the photodetector 12. When the photodetector 12 is mounted, glue should be filled around it to fix the photodetector 12. If the distance is too small, it will increase the difficulty of mounting and dispensing glue. If the distance between the photodetector 12 and the signal transceiver 11 is too large, the small signal output by the photodetector 12 is easily attenuated and interfered, thereby affecting the transmission of the electrical signal.

[0039] This spacing range takes into account many factors such as the electrical characteristics of the photodetector 12 and the signal transceiver 11, the stability of signal transmission, etc., and makes the distance between the two as short as possible while ensuring that the signal transceiver 11 and the photodetector 12 are mounted normally. This helps to ensure that the electrical signal from the photodetector 12 to the signal transceiver 11 can be transmitted with higher quality, thereby improving the accuracy of the optical signal processing of the entire silicon photonic module 100.

[0040] Since the signal transceiver 11 has an integrated transimpedance amplifier 111, the spacing between two adjacent high-speed interfaces of the signal transceiver 11 is 445μm~455μm. In order to ensure the signal quality and the shortest wiring between the photodetector 12 and the signal transceiver 11, the photodetector 12 uses eight independent back-illuminated photodetectors 12 and integrates a lens, which is mounted on the circuit board 1 using the Flip-chip process, and then connected to the relevant pins of the signal transceiver 11 through the wiring of the circuit board 1.

[0041] Among them, the working principle of the back-illuminated photodetector 12 is based on placing the sensitive part of the photosensitive material (e.g., a photodiode) on the back of the circuit structure so that light can directly enter the photosensitive area instead of being blocked or scattered. This design allows more photons to reach the photosensitive element, thereby improving sensitivity and signal-to-noise ratio. When light strikes the detector, it directly penetrates the transparent substrate and enters the photosensitive area; in the photosensitive area, the photons are absorbed and converted into electron-hole pairs. For CMOS and CCD sensors, this is done through the photoelectric effect; for avalanche photodiodes (APDs), an internal multiplication process may be involved to increase the signal; the generated electrons are collected and stored in a capacitor or transferred to a readout circuit; finally, these electrons are converted into a voltage signal. The advantage of the back-illuminated design is that it reduces the blocking of light by metal lines and other structures, improves quantum efficiency and response speed, which makes the back-illuminated detector have better performance under low light conditions and can significantly improve the sensitivity and signal-to-noise ratio of the image sensor.

[0042] In some possible implementations, combining Figure 1 and Figure 4The silicon photonic module 100 also includes a silicon photonic chip 23, a laser driver 22 and a heat sink 2. A mounting hole 17 is provided on the circuit board 1, and the heat sink 2 is arranged in the mounting hole 17. The circuit board 1 at the heat sink 2 is hollowed out, and the silicon photonic chip 23 and the laser driver 22 are both arranged on the heat sink 2.

[0043] The silicon photonic chip 23 is an integrated circuit chip made of silicon material and used in the field of optical communication and optical interconnection. It combines traditional electronic devices with optical devices and uses photonic technology to achieve high-speed, high-bandwidth data transmission and processing. The working principle of the silicon photonic chip 23 is based on the optoelectronic properties of silicon materials and the principles of optical devices. It uses the semiconductor properties of silicon to form a waveguide structure on the chip to guide photons to propagate inside the chip. Optical devices such as optical modulators, lasers, and photodetectors are also integrated on the chip to modulate and emit optical signals. The photons and electrons in the silicon photonic chip 23 are converted to each other through the photoelectric effect. After the optical signal is modulated by the optical modulator, the light intensity, phase, and frequency can be controlled. Through optical transmission media such as optical fibers, optical signals can be transmitted over long distances between chips or to the outside world.

[0044] Since the silicon photonic chip 23 and the laser driver 22 generate heat when working, good heat dissipation can prevent these components from overheating, thereby improving the performance and reliability of the entire module. The silicon photonic chip 23 and the laser driver 22 are arranged on the heat sink 2, and the structure of the entire module can be made more compact while ensuring good heat dissipation of the silicon photonic chip 23 and the laser driver 22, which helps to reduce the volume of the silicon photonic module 100.

[0045] In some embodiments, the heat sink 2 can be a tungsten copper heat sink substrate. Tungsten copper alloy has excellent thermal conductivity and can effectively conduct heat. In addition, tungsten copper alloy also has high hardness and wear resistance, and can maintain good surface quality and durability under high temperature and high pressure environments. Its high temperature resistance can maintain stable performance under high temperature environments, thereby extending the service life of the silicon photonic module 100. The tungsten copper heat sink substrate also has good corrosion resistance and can resist the erosion of most chemical media, especially acidic media. These advantages make tungsten copper heat sink substrates widely used in optical communications, optical modules, laser diode packaging and other fields.

[0046] Optionally, combined Figure 1 and Figure 4 The heat sink 2 includes a first surface and a second surface arranged opposite to each other. The first surface 1a of the circuit board and the first surface 2a of the heat sink are oriented in the same direction. The silicon photonic chip 23 and the laser driver 22 are both arranged on the second surface 2b of the heat sink.

[0047] In this way, the silicon photonic chip 23 and the laser driver 22 are both arranged on the second side 1b of the circuit board, that is, the receiving end components are all arranged on the first side 1a (front side) of the circuit board, and the transmitting end components are arranged on the second side 1b (back side) of the circuit board. In the limited space of the silicon photonic module 100, the positions of various components can be better planned to avoid mutual interference between components, thereby improving the compactness and rationality of the entire module layout.

[0048] The first surface 2a of the heat sink has heat dissipation fins, and the silicon photonic chip 23 and the laser driver 22 are arranged on the second surface 2b of the heat sink. The heat is conducted from the second surface 2b of the heat sink to the first surface 2a of the heat sink, and is promptly dissipated from the first surface 2a of the heat sink. Such a layout provides a relatively direct path for heat conduction.

[0049] As an optional implementation, combined with Figure 4 and Figure 5 , Figure 5 for Figure 4 In the partial enlarged view at point A, the second surface 2b of the heat sink and the second surface 1b of the circuit board have a height difference along the thickness direction of the circuit board 1, the outer surface of the laser driver 22 and the second surface 1b of the circuit board are located in the same plane, and the outer surface of the silicon photonic chip 23 and the outer surface of the laser driver 22 are also located in the same plane.

[0050] The heat sink 2 of the circuit board 1 is hollowed out, so the laser driver 22 and the silicon photonic chip 23 can be embedded in the circuit board 1 by adjusting the thickness of the heat sink 2, so that the surfaces of the silicon photonic chip 23 and the laser driver 22 are flush with the second side 1b of the circuit board, thereby making the silicon photonic chip 23 flush with the pad of the circuit board 1, the laser driver 22 flush with the pad of the circuit board 1, and the silicon photonic chip 23 flush with the pad of the laser driver 22, thereby minimizing the wire bonding distance.

[0051] In some optional embodiments, in combination Figure 1 The first surface 2 a of the heat sink is provided with an optical fiber groove 21 . The optical fiber groove 21 extends along the length direction of the circuit board 1 . The optical fiber groove 21 is used to accommodate the receiving end optical fiber 14 .

[0052] The optical fiber groove 21 can confine the receiving end optical fiber 14 in the groove, so that it extends regularly along the length direction of the circuit board 1, and prevents the optical fiber from being randomly distributed inside the silicon photonic module 100, thereby reducing the possibility of mutual entanglement and friction between optical fibers, protecting the optical fiber from physical damage, and extending the service life of the optical fiber. In addition, the optical fiber groove 21 can also make the heat conduction connection between the heat sink 2 and other structural parts more direct, heat dissipation better, and prevent the receiving end optical fiber 14 from being broken between other structural parts.

[0053] It should be noted that, on the first side 1 a of the circuit board, along the length direction of the circuit board 1 , there is a spacing of about 10 mm between the photodetector 12 and the heat sink 2 , which is compatible with the design of 2xFR4.

[0054] In some possible implementations, the silicon photonic module 100 further includes a transmitting end fiber array unit 15 and a transmitting end optical fiber 16 , wherein the transmitting end fiber array unit 15 is disposed on the second surface 1 b of the circuit board, and the transmitting end optical fiber 16 is connected between the optical port 3 and the transmitting end fiber array unit 15 .

[0055] The presence of the transmitting end fiber array unit 15 and the transmitting end fiber 16 enables the silicon photonic module 100 to realize the complete optical signal receiving and transmitting function. The transmitting end fiber array unit 15 can preliminarily organize and focus the optical signal, so that the optical signal accurately enters the transmitting end fiber 16, reduces the loss such as scattering at the interface and during the transmission process, improves the efficiency of optical signal transmission, and ensures that the transmitted signal has sufficient strength and accuracy.

[0056] The transmitting end components are all arranged on the second side 1b (rear side) of the circuit board. In the limited space of the silicon photonic module 100, the positions of various components are more reasonably allocated, the compactness and coordination of the module layout are improved, and the layout conflicts between different components are avoided.

[0057] In some embodiments, the circuit board 1 is manufactured by an m-sap process, and the signal transceiver 11 is manufactured by a 5nm process.

[0058] Since the signal processor is directly mounted on the circuit board 1 using a bare chip, the signal processor uses a 5nm process. Specifically, the bare chip size is 4mm*7mm, the pins include copper pillars, a nickel barrier layer and tin-lead solder, the diameter of the copper pillars is 70μm, and the distance between two adjacent pins is 140μm.

[0059] For the signal processor of this bare chip, the circuit board 1 needs to adopt the m-sap process (Modified Semi-Additive Process), which is mainly used to manufacture high-density, high-performance packaging substrates. This process has high precision and high reliability, and is suitable for the welding of this 5nm process bare chip with high precision requirements.

[0060] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit it. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A silicon photonic module, characterized in that: include: Circuit boards; A signal transceiver, which is a bare chip and is disposed on the circuit board; A transimpedance amplifier, integrated on the signal transceiver, the transimpedance amplifier is used to amplify the electrical signal; A digital signal processor is integrated on the signal transceiver and electrically connected to the transimpedance amplifier, and the digital signal processor is used to receive and process the electrical signal amplified by the transimpedance amplifier.

2. The silicon photonic module according to claim 1, characterized in that: The silicon photonic module further includes a photodetector, which is electrically connected to the signal transceiver and is used to convert an optical signal into an electrical signal.

3. The silicon photonic module according to claim 2, characterized in that: The silicon photonic module also includes an optical port, a receiving optical fiber, a receiving optical fiber array unit and a photodetector. The circuit board includes a first surface and a second surface arranged opposite to each other. The signal transceiver and the receiving optical fiber array unit are both arranged on the first surface of the circuit board. The receiving optical fiber is connected between the optical port and the receiving optical fiber array unit. The photodetector is arranged between the optical fiber array unit and the signal transceiver along the length direction of the circuit board. The photodetector is used to convert the optical signal refracted by the receiving optical fiber array unit into an electrical signal.

4. The silicon photonic module according to claim 3, characterized in that: The photodetector is mounted on the circuit board by a flip-chip process, and the distance between the photodetector and the signal transceiver is 400 m~500 m, the photodetector is electrically connected to the signal transceiver.

5. The silicon photonic module according to claim 3, characterized in that: The silicon photonic module also includes a silicon photonic chip, a laser driver and a heat sink. The circuit board is provided with a mounting hole, the heat sink is arranged in the mounting hole, and the silicon photonic chip and the laser driver are both arranged on the heat sink.

6. The silicon photonic module according to claim 5, characterized in that: The heat sink includes a first surface and a second surface that are arranged opposite to each other. The first surface of the circuit board and the first surface of the heat sink are oriented in the same direction. The silicon photonic chip and the laser driver are both arranged on the second surface of the heat sink.

7. The silicon photonic module according to claim 6, characterized in that: The second surface of the heat dissipation plate and the second surface of the circuit board have a height difference along the thickness direction of the circuit board, and the outer surface of the laser driver and the second surface of the circuit board are located in the same plane.

8. The silicon photonic module according to claim 6, characterized in that: An optical fiber groove is provided on the first surface of the heat dissipation plate. The optical fiber groove extends along the length direction of the circuit board and is used to accommodate the receiving end optical fiber.

9. The silicon photonic module according to any one of claims 6 to 8, characterized in that: The silicon photonic module further comprises a transmitting end fiber array unit and a transmitting end optical fiber. The transmitting end optical fiber array unit is arranged on the second surface of the circuit board, and the transmitting end optical fiber is connected between the optical port and the transmitting end optical fiber array unit.

10. The silicon photonic module according to claim 1, characterized in that: The circuit board is manufactured by the m-sap process, and the signal transceiver is manufactured by the 5nm process.

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