Radio frequency front-end module heat dissipation optimization method and system and related equipment

Abstract

The invention relates to a heat dissipation optimization method and system for a radio frequency front-end module and related equipment. The method comprises the following steps: acquiring a layout of a power amplifier in the radio frequency front-end module; continuously dividing the layout into a plurality of temperature regions according to the thermal performance of the power amplifier; obtaining an original spacing between transistors in the power amplifier; according to the original spacing, transistor optimized spacing between the transistors in the different temperature areas is obtained again; rearranging the transistors of the power amplifier according to the optimized intervals of the transistors to obtain an optimized layout; and obtaining the optimized heat dissipation optimization radio frequency front-end module according to the optimized layout. According to the invention, the layout of the transistors in the power amplifier is adjusted, so that the distance between the transistors with relatively high heat is enlarged, and the radio frequency performance of the radio frequency front-end module is improved.

Description

Technical Field

[0001] The present invention is applicable to the technical field of radio frequency chip design, and in particular relates to a radio frequency front-end module heat dissipation optimization method, system and related equipment. Background Art

[0002] The existing mobile phone RF front-end module structure is as follows Figure 1 As shown, the RF front-end module generally includes a low noise amplifier (LNA), a power amplifier (PA), a filter, a switch, an antenna and other components. Among them, the power amplifier is a very important module of the RF front-end, which is used to amplify the output signal, and finally the antenna sends the amplified signal.

[0003] Due to the rapid development of science and technology, the wireless communication technology of smart devices is also rapidly iterating. For the 5G wireless communication system, the key module of its RF front-end module is the RF power amplifier (RF Power Amplifier) ​​located at the end of the transmitter. The RF power amplifier directly affects and determines the output power, efficiency, gain, linearity, working bandwidth, reflection coefficient and other performance indicators of the transmitter system, thereby affecting and determining the various performance indicators of the entire 5G wireless communication system. In order to achieve fast data transmission, the frequency of 5G communication signals is higher. According to the speed of light equal to the wavelength multiplied by the frequency, the wavelength of 5G signals is much smaller than that of 4G and 3G signals. Therefore, if the 5G signal wants to cover a larger area, more base stations for transmitting or receiving 5G signals are needed, or the transmission power of the 5G signal is made larger to maintain a longer transmission distance.

[0004] However, for mobile phone RF front-end modules with high integration, the greater the transmission power of the power amplifier means the greater the power consumption, and the greater the current, the greater the heat generated by the RF front-end module. Excessive temperature will have a great negative impact on the performance of various components of the module and the integrated chip. With the iterative development of technology, the research and development of high-output power modules and chips is imperative, so the heat dissipation optimization problem is an important challenge in the chip development process. Summary of the invention

[0005] The present invention provides a radio frequency front-end module heat dissipation optimization method, system and related equipment, aiming to solve the heating problem of the power amplifier in the existing radio frequency front-end module at high power.

[0006] In order to solve the above technical problems, in a first aspect, the present invention provides a method for optimizing heat dissipation of a radio frequency front-end module, and the method for optimizing heat dissipation of a radio frequency front-end module comprises the following steps: S101, obtaining a layout of a power amplifier in a radio frequency front-end module; S102, continuously dividing the layout into a plurality of temperature zones according to the thermal performance of the power amplifier; S103, obtaining the original spacing between transistors in the power amplifier; S104, reacquiring the optimized spacing of transistors between transistors in each of the different temperature regions according to the original spacing; S105, re-layout the transistors of the power amplifier according to the optimized spacing of the transistors to obtain an optimized layout; S106. Obtain an optimized heat dissipation optimized RF front-end module according to the optimized layout.

[0007] Furthermore, in step S102, based on the thermal performance of the power amplifier, the layout is divided into a high temperature area and two low temperature areas on both sides of the high temperature area.

[0008] Furthermore, the high temperature area is divided around the transistor with the highest temperature in the layout.

[0009] Furthermore, in step S104, the original spacing is defined as d0, and when the first transistor optimized spacing d1 between the transistors in the low temperature region is reacquired, d0>d1; when the second transistor optimized spacing d2 between the transistors in the high temperature region is reacquired, d2>d0.

[0010] Furthermore, the number of transistors included in the two low-temperature regions is defined as m and n respectively, and the number of transistors included in the high-temperature region is defined as w, wherein w ≥ 3, then in step S104: Obtaining the total reduced spacing length of the low temperature region l1 = (m + n - 2) × (d0 - d1), which is equal to the total increased spacing length of the high temperature region; Obtaining an increased basic spacing l2 = l1 / ((w - 1) × w) between adjacent transistors in the high temperature region; The transistor with the highest temperature in the high temperature region is determined, and the spacings between adjacent transistors from the transistor to the outermost transistor in the high temperature region are respectively: d1 + (w - 1) × l2, d1 + (w - 2) × l2, ..., d1 + l2.

[0011] Furthermore, in step S102, according to the thermal performance of the power amplifier, the layout is divided into a plurality of working areas according to the differential structure of the power amplifier, and the temperature region is divided for each of the working areas.

[0012] Furthermore, after step S105, the RF front-end module heat dissipation optimization method further includes: According to the optimized layout, the substrate metals of the transistors of different power amplifiers are modified so that the substrate metals of different transistors are bonded to each other and are uniformly grounded.

[0013] In a second aspect, the present invention further provides a radio frequency front-end module heat dissipation optimization system, comprising: A layout acquisition module, used to acquire the layout of the power amplifier in the RF front-end module; A division module, used for continuously dividing the layout into a plurality of temperature zones according to the thermal performance of the power amplifier; A spacing analysis module, used to obtain the original spacing between transistors in the power amplifier; A layout optimization module, used for re-obtaining the optimized spacing of transistors between transistors in each of the different temperature regions according to the original spacing; A re-layout module, used to re-layout the transistors of the power amplifier according to the optimized spacing of the transistors to obtain an optimized layout; The module optimization module is used to obtain an optimized heat dissipation optimized RF front-end module according to the optimized layout.

[0014] Furthermore, the division module divides the layout into a high temperature area and two low temperature areas on both sides of the high temperature area based on the thermal performance of the power amplifier; According to the thermal performance of the power amplifier, the layout is divided into a plurality of working areas according to the differential structure of the power amplifier, and the temperature zone is divided for each of the working areas.

[0015] In a third aspect, the present invention also provides a computer device, comprising: a memory, a processor, and a RF front-end module heat dissipation optimization program stored in the memory and executable on the processor, wherein the processor implements the steps in the RF front-end module heat dissipation optimization method as described in any one of the above embodiments when executing the RF front-end module heat dissipation optimization program.

[0016] In a fourth aspect, the present invention also provides a computer-readable storage medium, on which a RF front-end module heat dissipation optimization program is stored. When the RF front-end module heat dissipation optimization program is executed by a processor, the steps in the RF front-end module heat dissipation optimization method as described in any one of the above embodiments are implemented.

[0017] The beneficial effect achieved by the present invention is that a method for optimizing the heat dissipation of an RF front-end module for transistor layout is proposed. The method analyzes the thermal performance of the power amplifier in the module to determine the heat generation area, and adjusts the layout of the transistors in the power amplifier to expand the spacing between transistors with larger heat generation, and makes the temperature performance of transistors in different areas of the final stage of the power amplifier tend to be balanced, thereby reducing the heat generation of the RF front-end module and improving the RF performance of the RF front-end module. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 It is a structural schematic diagram of a mobile phone radio frequency front-end module in the prior art; Figure 2 It is a flowchart of the steps of the method for optimizing heat dissipation of a radio frequency front-end module provided by an embodiment of the present invention; Figure 3 It is a schematic diagram of the structure of a multi-stage power amplifier of a radio frequency front-end module in the radio frequency front-end module heat dissipation optimization method provided in an embodiment of the present invention; Figure 4 It is a schematic diagram of the layout of the original power amplifier in the radio frequency front-end module heat dissipation optimization method provided by an embodiment of the present invention; Figure 5 It is a schematic diagram of the original power amplifier transistor spacing in the radio frequency front-end module heat dissipation optimization method provided by an embodiment of the present invention; Figure 6 It is a schematic diagram of thermal performance analysis of an original power amplifier in a radio frequency front-end module heat dissipation optimization method provided by an embodiment of the present invention; Figure 7 It is a schematic diagram of heat dissipation optimization of power amplifier transistor spacing in the radio frequency front-end module heat dissipation optimization method provided by an embodiment of the present invention; Figure 8 It is a schematic diagram of the layout of a heat dissipation optimized power amplifier in the heat dissipation optimization method of the radio frequency front-end module provided in an embodiment of the present invention; Fig. 9 It is a schematic diagram of thermal performance analysis of a heat dissipation-optimized power amplifier in a heat dissipation optimization method for a radio frequency front-end module provided in an embodiment of the present invention; Fig.10 It is a structural schematic diagram of a radio frequency front-end module heat dissipation optimization system provided by an embodiment of the present invention; Fig.11 It is a schematic diagram of the structure of a computer device provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0019] In order to make the purpose, technical solution and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention.

[0020] Please refer to Figure 2 , Figure 2 1 is a flowchart of a method for optimizing heat dissipation of a radio frequency front-end module provided by an embodiment of the present invention, wherein the method for optimizing heat dissipation of a radio frequency front-end module comprises the following steps: S101. Obtain the layout of the power amplifier in the radio frequency front-end module.

[0021] In the related art, the power amplifier of the RF front-end module is a multi-stage connected structure. For example, in the RF front-end module used for 5G signal transmission, it generally has a two-stage or three-stage amplification structure, such as Figure 3 As shown, in general, in a multi-stage amplification structure, the front stage is a driving stage, which is used to amplify the small signal at the input end to a large enough amplitude so as to be able to drive the power stage; the final stage is a power stage, which is used to further amplify the signal provided by the driving stage to generate a large enough power to drive the load (such as transmitting the 5G signal through the output end). In a multi-stage amplification structure, the transistors of the power stage amplifier are more numerous and consume more power than those in other structures, so more heat is generated. Therefore, for the entire RF front-end module, the power level of the power amplifier has the greatest impact on its performance, and its heat dissipation optimization is the most critical. In the embodiment of the present invention, the heat dissipation optimization of the final stage of the power amplifier is taken as an example for explanation.

[0022] The layout in the embodiment of the present invention specifically refers to the substrate layout of the power amplifier. An original power amplifier layout that has not been optimized by the RF front-end module heat dissipation optimization method provided by the embodiment of the present invention is as follows: Figure 4 As shown, the power amplifier substrate can be mainly divided into the structure of substrate welding metal, chip pins and chip outer frame, and due to the common application structure of the power amplifier, each transistor therein is generally connected in parallel in a manner of multiple transistors, and when each transistor is welded to the substrate, there will be a certain distance; Figure 5 The spacing of the individual transistors in a power amplifier is shown in abstract form, where Figure 5 Middle A is a layout in which transistors are closely arranged. In this layout, there is not enough space between transistors to dissipate the heat generated by them, which will cause the heat to accumulate easily, thus affecting performance. Figure 5 In the B layout, each transistor is arranged at the same pitch, and its actual layout is closer to Figure 4 The layout shown is compared to Figure 5 In the A method, the transistor has a certain amount of space to dissipate heat. Figure 5The transistor layout is shown in the figure. For different transistors, their size, power, and heat generation will also be different. Objectively speaking, larger transistors will generate more heat than smaller transistors. Therefore, Figure 5 The transistor layout shown also creates the problem of heat accumulation in some locations.

[0023] S102: Continuously divide the layout into a plurality of temperature zones according to the thermal performance of the power amplifier.

[0024] In the embodiment of the present invention, the temperature region division is mainly performed by performing thermal performance analysis on the power amplifier. For details, please refer to Figure 6 , Figure 6 The embodiment of the present invention provides Figure 4 The schematic diagram of the results of thermal performance analysis of the layout shown in the figure, where Figure 6 The overall shape is two waves, which correspond to the front and back ends of the final amplifier. Different wave peaks correspond to the heating conditions of different transistors. Taking the wave shape on the left as an example, it can be seen that some transistors in its layout generate more heat than other transistors. Combining the wave shapes on the left and right sides, under high power, the highest temperature of the transistor on the left side of the final stage has reached 120°, and the lowest temperature of the transistor on the left side of the final stage is 100°; the highest temperature of the transistor on the right side of the final stage has reached 110°, and the lowest temperature of the transistor on the left side of the final stage is 90°; the temperature distribution of the transistors on the left and right sides is uneven, which indirectly leads to uneven power distribution of the transistors on the same side. Therefore, Figure 4 The layout of the power amplifier shown will cause some transistors to work in the amplification area and some transistors to work in the saturation area. The performance of the transistors working in the saturation area is poor, which will lead to the deterioration of the overall performance. At the same time, there is thermal imbalance between the front and rear ends of the power amplifier. The average temperature of the left transistor of the final stage is about 10° higher than that of the right transistor, which will lead to inconsistent power on the left and right sides. In the differential structure, if the power on the left and right sides is different, the performance will deteriorate accordingly when the power is synthesized. The greater the difference, the greater the degree of deterioration.

[0025] In step S102, based on the thermal performance of the power amplifier, the layout is divided into a high temperature region and two low temperature regions on both sides of the high temperature region. The high temperature region is divided around the transistor with the highest temperature in the layout.

[0026] For details, please combine Figure 6 , Figure 6The peak in the graph represents the heating condition of a certain transistor. According to the thermal performance analysis, it is clear that the heat generation in the power amplifier is centered on a certain transistor and gradually decreases outward. In the embodiment of the present invention, the transistor with the highest temperature in the layout is taken as the center, and a certain number of transistors around it form a high-temperature area. Correspondingly, the positions on both sides of the high-temperature area are used as low-temperature areas.

[0027] S103: Obtain the original spacing between transistors in the power amplifier.

[0028] In the embodiment of the present invention, Figure 4 , Figure 5 The original spacing is obtained by using the local layout of B in FIG.

[0029] S104 , reacquiring an optimized transistor spacing between transistors in each of the different temperature zones according to the original spacing.

[0030] In step S104, the original spacing is defined as d0, and when the first transistor optimized spacing d1 between transistors in the low temperature region is reacquired, d0>d1; when the second transistor optimized spacing d2 between transistors in the high temperature region is reacquired, d2>d0.

[0031] The purpose of the embodiment of the present invention to optimize the heat dissipation of the final stage of the power amplifier is to expand the spacing of transistors in the area with higher temperature and reduce the spacing of transistors in the area with lower temperature by analyzing the heat generation area. Among them, the purpose of expanding the spacing of transistors is to optimize the heat dissipation performance of transistors with high heat generation, and the purpose of reducing the spacing of transistors is to keep the size of the original layout unchanged. Therefore, in the process of achieving heat dissipation optimization, it is necessary to control the degree of expansion and reduction of the spacing.

[0032] For details, please refer to Figure 7 In the embodiment of the present invention, the number of transistors contained in the two low-temperature regions is defined as m and n respectively, and the number of transistors contained in the high-temperature region is defined as w, wherein w ≥ 3, then in step S104: Obtaining the total reduced spacing length of the low temperature region l1 = (m + n - 2) × (d0 - d1), which is equal to the total increased spacing length of the high temperature region; Obtaining an increased basic spacing l2 = l1 / ((w - 1) × w) between adjacent transistors in the high temperature region; Determine the transistor with the highest temperature in the high temperature area, and the second transistor optimization spacing d2 of the adjacent transistors from the transistor to the outermost transistor in the high temperature area are respectively: d1 + (w - 1) × l2, d1 + (w - 2) × l2, ..., d1 + l2.

[0033] For example, taking the layout as an example, there are 12 transistors in total. After the temperature area division is completed, the high temperature area contains 3 transistors and the low temperature area contains 9 transistors. Assuming that the original spacing of each transistor is 6um, the total spacing of the original low temperature area is (9 - 2) × 6 = 42um; if d1 = 3um, the total length of the high temperature area spacing can be increased by l1 = (9 -2) × (6 - 3) = 21um; the number of transistors in the high temperature area is 3, and there are 4 spacings that need to be adjusted. According to the method in the above embodiment, the basic spacing l2 = 3.5um, the spacing between the highest temperature transistor and the second highest temperature transistor is adjusted to 2 × 3.5 + 6 = 13um, and the spacing between the second highest temperature transistor and the transistor at the boundary of the low temperature area is adjusted to 1 × 3.5 + 6 = 9.5um. In the above manner, the spacing between transistors in the low temperature area is reduced, and the spacing between transistors in the high temperature area is correspondingly expanded according to the size of their heat generation, but the size of the overall layout remains unchanged.

[0034] S105 , re-layout the transistors of the power amplifier according to the optimized transistor spacing to obtain an optimized layout.

[0035] The RF front-end module heat dissipation optimization method also includes: According to the optimized layout, the substrate metals of the transistors of different power amplifiers are modified so that the substrate metals of different transistors are bonded to each other and are uniformly grounded.

[0036] S106. Obtain an optimized heat dissipation optimized RF front-end module according to the optimized layout.

[0037] In step S102, according to the thermal performance of the power amplifier, the layout is divided into a plurality of working areas according to the differential structure of the power amplifier, and the temperature region is divided for each of the working areas.

[0038] As mentioned above, Figure 4The thermal performance analysis schematic diagram shown is in the shape of two waves, which correspond to the front end and the back end (i.e., two working areas) of the final power amplifier, respectively. The method in the embodiment of the present invention optimizes the situation where the front end generates more heat than the back end. It is understandable that when the thermal performance gap between the front and back ends of the power amplifier is large, in order to better balance the thermal performance of the front and back ends of the power amplifier, the front and back ends of the power amplifier can also be optimized separately according to the method in the embodiment of the present invention.

[0039] For example, corresponding Figure 4 The layout shown in the figure is optimized for heat dissipation. Figure 8 As shown, Figure 8 The results of thermal performance analysis of the layout shown in the figure are as follows Fig. 9 As shown, compared with the original layout, the spacing between transistors at the highest temperature position is increased; in order to further optimize the heat dissipation effect, the substrate grounding of different transistors is changed to a large area of ​​metal to the ground, so that the welding metal between different transistors has a heat transfer effect. Combined with the results of thermal performance analysis, it can be seen that when the final module works at high power, the temperature has dropped significantly, the highest temperature is 80°, which is 40° lower than before, and the temperature on both sides of the front and rear ends is very balanced, with a difference of less than 2°, and a difference of 10° before; the temperature difference of all transistors on a single side is very small, within 5°, and a difference of 20° before, which proves that the RF front-end module heat dissipation optimization method provided in the embodiment of the present invention has a good technical effect.

[0040] The beneficial effect achieved by the present invention is that a method for optimizing the heat dissipation of an RF front-end module for transistor layout is proposed. The method analyzes the thermal performance of the power amplifier in the module to determine the heat generation area, and adjusts the layout of the transistors in the power amplifier to expand the spacing between transistors with larger heat generation, and makes the temperature performance of transistors in different areas of the final stage of the power amplifier tend to be balanced, thereby reducing the heat generation of the RF front-end module and improving the RF performance of the RF front-end module. The embodiment of the present invention also provides a radio frequency front-end module heat dissipation optimization system 200, please refer to Fig.10 , Fig.10 200 is a schematic diagram of the structure of a radio frequency front-end module heat dissipation optimization system provided in an embodiment of the present invention. The radio frequency front-end module heat dissipation optimization system 200 includes: A layout acquisition module 201 is used to acquire the layout of the power amplifier in the RF front-end module; A division module 202, configured to continuously divide the layout into a plurality of temperature zones according to the thermal performance of the power amplifier; A spacing analysis module 203, used to obtain the original spacing between transistors in the power amplifier; A layout optimization module 204, configured to re-acquire an optimized spacing between transistors in each of the different temperature regions according to the original spacing; A re-layout module 205, configured to re-layout the transistors of the power amplifier according to the optimized spacing of the transistors to obtain an optimized layout; The module optimization module 206 is used to obtain an optimized heat dissipation optimized RF front-end module according to the optimized layout.

[0041] The division module 202 divides the layout into a high temperature area and two low temperature areas on both sides of the high temperature area based on the thermal performance of the power amplifier; According to the thermal performance of the power amplifier, the layout is divided into a plurality of working areas according to the differential structure of the power amplifier, and the temperature zone is divided for each of the working areas.

[0042] The RF front-end module heat dissipation optimization system 200 can implement the steps in the RF front-end module heat dissipation optimization method in the above embodiment, and can achieve the same technical effects. Please refer to the description in the above embodiment and will not be repeated here.

[0043] The embodiment of the present invention also provides a computer device, please refer to Fig.11 , Fig.11 It is a structural diagram of a computer device provided in an embodiment of the present invention. The computer device 300 includes: a memory 302, a processor 301, and a RF front-end module heat dissipation optimization program stored in the memory 302 and executable on the processor 301.

[0044] The processor 301 calls the RF front-end module heat dissipation optimization program stored in the memory 302 to execute the steps in the RF front-end module heat dissipation optimization method provided in the embodiment of the present invention. Figure 2 , specifically including the following steps: S101. Obtain the layout of the power amplifier in the radio frequency front-end module.

[0045] S102: Continuously divide the layout into a plurality of temperature zones according to the thermal performance of the power amplifier.

[0046] In step S102, based on the thermal performance of the power amplifier, the layout is divided into a high temperature area and two low temperature areas on both sides of the high temperature area.

[0047] The high temperature area is divided around the transistor with the highest temperature in the layout.

[0048] S103: Obtain the original spacing between transistors in the power amplifier.

[0049] S104 , reacquiring an optimized transistor spacing between transistors in each of the different temperature zones according to the original spacing.

[0050] In step S104, the original spacing is defined as d0, and when the first transistor optimized spacing d1 between transistors in the low temperature region is reacquired, d0>d1; when the second transistor optimized spacing d2 between transistors in the high temperature region is reacquired, d2>d0.

[0051] The number of transistors contained in the two low-temperature regions is defined as m and n respectively, and the number of transistors contained in the high-temperature region is defined as w, wherein w ≥ 3, then in step S104: Obtaining the total reduced spacing length of the low temperature region l1 = (m + n - 2) × (d0 - d1), which is equal to the total increased spacing length of the high temperature region; Obtaining an increased basic spacing l2 = l1 / ((w - 1) × w) between adjacent transistors in the high temperature region; The transistor with the highest temperature in the high temperature region is determined, and the spacings between adjacent transistors from the transistor to the outermost transistor in the high temperature region are respectively: d1 + (w - 1) × l2, d1 + (w - 2) × l2, ..., d1 + l2.

[0052] S105 , re-layout the transistors of the power amplifier according to the optimized transistor spacing to obtain an optimized layout.

[0053] The RF front-end module heat dissipation optimization method also includes: According to the optimized layout, the substrate metals of the transistors of different power amplifiers are modified so that the substrate metals of different transistors are bonded to each other and are uniformly grounded.

[0054] S106. Obtain an optimized heat dissipation optimized RF front-end module according to the optimized layout.

[0055] In step S102, according to the thermal performance of the power amplifier, the layout is divided into a plurality of working areas according to the differential structure of the power amplifier, and the temperature region is divided for each of the working areas.

[0056] The computer device 300 provided in the embodiment of the present invention can implement the steps in the method in the above embodiment and can achieve the same technical effects. Please refer to the description in the above embodiment and will not be repeated here.

[0057] An embodiment of the present invention also provides a computer-readable storage medium, on which a RF front-end module heat dissipation optimization program is stored. When the RF front-end module heat dissipation optimization program is executed by a processor, the various processes and steps in the method provided by the embodiment of the present invention are implemented, and the same technical effect can be achieved. To avoid repetition, it will not be repeated here.

[0058] Those skilled in the art can understand that all or part of the processes in the above-mentioned embodiments can be realized by instructing the relevant hardware (which can be a mobile phone, a computer, a server, an air conditioner, or a network device, etc.) through the RF front-end module heat dissipation optimization program, and the program can be stored in a computer-readable storage medium, and when the program is executed, it can include the processes of the embodiments of the above-mentioned methods. Among them, the storage medium can be a disk, an optical disk, a read-only memory (ROM) or a random access memory (RAM), etc.

[0059] It should be noted that, in this article, the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, an element defined by the sentence "comprises a ..." does not exclude the existence of other identical elements in the process, method, article or device including the element.

[0060] The embodiments of the present invention are described above in conjunction with the accompanying drawings. What is disclosed is only the preferred embodiment of the present invention. However, the present invention is not limited to the above-mentioned specific implementation manner. The above-mentioned specific implementation manner is only illustrative rather than restrictive. Under the enlightenment of the present invention, ordinary technicians in this field can also make many forms and equivalent changes without departing from the scope of protection of the purpose of the present invention and the claims, all of which are within the protection of the present invention.

Claims

1. A method for optimizing heat dissipation of a radio frequency front-end module, characterized in that: The RF front-end module heat dissipation optimization method comprises the following steps: S101, obtaining a layout of a power amplifier in a radio frequency front-end module; S102, continuously dividing the layout into a plurality of temperature zones according to the thermal performance of the power amplifier; S103, obtaining the original spacing between transistors in the power amplifier; S104, reacquiring the optimized spacing of transistors between transistors in each of the different temperature regions according to the original spacing; S105, re-layout the transistors of the power amplifier according to the optimized spacing of the transistors to obtain an optimized layout; S106. Obtain an optimized heat dissipation optimized RF front-end module according to the optimized layout.

2. The method for optimizing heat dissipation of a radio frequency front-end module according to claim 1, characterized in that: In step S102, based on the thermal performance of the power amplifier, the layout is divided into a high temperature area and two low temperature areas on both sides of the high temperature area.

3. The method for optimizing heat dissipation of a radio frequency front-end module according to claim 2, characterized in that: The high temperature area is divided around the transistor with the highest temperature in the layout.

4. The method for optimizing heat dissipation of a radio frequency front-end module according to claim 3, characterized in that: In step S104, the original spacing is defined as d0, and when the first transistor optimized spacing d1 between the transistors in the low temperature region is reacquired, d0>d1; when the second transistor optimized spacing d2 between the transistors in the high temperature region is reacquired, d2>d0.

5. The method for optimizing heat dissipation of a radio frequency front-end module according to claim 4, characterized in that: The number of transistors contained in the two low-temperature regions is defined as m and n respectively, and the number of transistors contained in the high-temperature region is defined as w, wherein w ≥ 3, then in step S104: Obtaining the total reduced spacing length of the low temperature region l1 = (m + n - 2) × (d0 - d1), which is equal to the total increased spacing length of the high temperature region; Obtaining an increased basic spacing l2 = l1 / ((w - 1) × w) between adjacent transistors in the high temperature region; The transistor with the highest temperature in the high temperature region is determined, and the distances between adjacent transistors from the transistor to the outermost transistor in the high temperature region are respectively: d1 + (w - 1) × l2, d1 + (w - 2) × l2, ..., d1 + l2.

6. The method for optimizing heat dissipation of a radio frequency front-end module according to claim 2, characterized in that: In step S102, according to the thermal performance of the power amplifier, the layout is divided into a plurality of working areas according to the differential structure of the power amplifier, and the temperature region is divided for each of the working areas.

7. The method for optimizing heat dissipation of a radio frequency front-end module according to claim 1, characterized in that: After step S105, the RF front-end module heat dissipation optimization method further includes: According to the optimized layout, the substrate metals of the transistors of different power amplifiers are modified so that the substrate metals of different transistors are bonded to each other and are uniformly grounded.

8. A radio frequency front-end module heat dissipation optimization system, characterized in that: include: A layout acquisition module, used to acquire the layout of the power amplifier in the RF front-end module; A division module, used for continuously dividing the layout into a plurality of temperature zones according to the thermal performance of the power amplifier; A spacing analysis module, used to obtain the original spacing between transistors in the power amplifier; A layout optimization module, used for re-obtaining the optimized spacing of transistors between transistors in each of the different temperature regions according to the original spacing; A re-layout module, used to re-layout the transistors of the power amplifier according to the optimized spacing of the transistors to obtain an optimized layout; The module optimization module is used to obtain an optimized heat dissipation optimized RF front-end module according to the optimized layout.

9. A computer device, characterized in that: include: A memory, a processor, and a RF front-end module heat dissipation optimization program stored in the memory and executable on the processor, wherein the processor implements the steps in the RF front-end module heat dissipation optimization method as described in any one of claims 1 to 7 when executing the RF front-end module heat dissipation optimization program.

10. A computer-readable storage medium, characterized in that: The computer-readable storage medium stores a RF front-end module heat dissipation optimization program, and when the RF front-end module heat dissipation optimization program is executed by the processor, the steps in the RF front-end module heat dissipation optimization method as described in any one of claims 1-7 are implemented.

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